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DE3750460D1 - Halbleiterspeichergerät. - Google Patents

Halbleiterspeichergerät.

Info

Publication number
DE3750460D1
DE3750460D1 DE3750460T DE3750460T DE3750460D1 DE 3750460 D1 DE3750460 D1 DE 3750460D1 DE 3750460 T DE3750460 T DE 3750460T DE 3750460 T DE3750460 T DE 3750460T DE 3750460 D1 DE3750460 D1 DE 3750460D1
Authority
DE
Germany
Prior art keywords
data
bits
bit
error
mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3750460T
Other languages
English (en)
Other versions
DE3750460T2 (de
Inventor
Kiyokazu C O Nec Cor Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3750460D1 publication Critical patent/DE3750460D1/de
Publication of DE3750460T2 publication Critical patent/DE3750460T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/22—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing
    • G06F11/2205—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing using arrangements specific to the hardware being tested
    • G06F11/2215—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing using arrangements specific to the hardware being tested to test error correction or detection circuits
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1076—Parity data used in redundant arrays of independent storages, e.g. in RAID systems
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/36—Data generation devices, e.g. data inverters

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
DE3750460T 1986-11-19 1987-11-19 Halbleiterspeichergerät. Expired - Fee Related DE3750460T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61277126A JPS63129600A (ja) 1986-11-19 1986-11-19 誤り検出・訂正回路付半導体記憶装置

Publications (2)

Publication Number Publication Date
DE3750460D1 true DE3750460D1 (de) 1994-10-06
DE3750460T2 DE3750460T2 (de) 1995-04-06

Family

ID=17579154

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3750460T Expired - Fee Related DE3750460T2 (de) 1986-11-19 1987-11-19 Halbleiterspeichergerät.

Country Status (4)

Country Link
US (1) US4878220A (de)
EP (1) EP0268289B1 (de)
JP (1) JPS63129600A (de)
DE (1) DE3750460T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5043990A (en) * 1987-12-04 1991-08-27 Hitachi, Ltd. Semiconductor integrated circuit device
JPH01201736A (ja) * 1988-02-08 1989-08-14 Mitsubishi Electric Corp マイクロコンピュータ
JPH02166700A (ja) * 1988-12-15 1990-06-27 Samsung Electron Co Ltd エラー検査及び訂正装置を内蔵した不揮発性半導体メモリ装置
JPH02177099A (ja) * 1988-12-27 1990-07-10 Nec Corp 半導体記憶装置
US5195099A (en) * 1989-04-11 1993-03-16 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having improved error correcting circuit
US5619066A (en) * 1990-05-15 1997-04-08 Dallas Semiconductor Corporation Memory for an electronic token
US5199035A (en) * 1990-10-01 1993-03-30 Motorola, Inc. Logic circuit for reliability and yield enhancement
JPH06325595A (ja) * 1991-03-27 1994-11-25 Nec Kyushu Ltd 誤り訂正回路付きｐｒｏｍ装置
JP2821278B2 (ja) * 1991-04-15 1998-11-05 日本電気アイシーマイコンシステム株式会社 半導体集積回路
US5994770A (en) * 1991-07-09 1999-11-30 Dallas Semiconductor Corporation Portable electronic data carrier
US5297099A (en) * 1991-07-10 1994-03-22 Dallas Semiconductor Corp. Integrated circuit with both battery-powered and signal-line-powered areas
KR950008789B1 (ko) * 1992-07-30 1995-08-08 삼성전자주식회사 멀티-이씨씨(ecc)회로를 내장하는 반도체 메모리 장치
US5502732A (en) * 1993-09-20 1996-03-26 International Business Machines Corporation Method for testing ECC logic
US5848541A (en) * 1994-03-30 1998-12-15 Dallas Semiconductor Corporation Electrical/mechanical access control systems
US5831827A (en) * 1994-04-28 1998-11-03 Dallas Semiconductor Corporation Token shaped module for housing an electronic circuit
US5604343A (en) * 1994-05-24 1997-02-18 Dallas Semiconductor Corporation Secure storage of monetary equivalent data systems and processes
US5679944A (en) * 1994-06-15 1997-10-21 Dallas Semiconductor Corporation Portable electronic module having EPROM memory, systems and processes
JPH08129510A (ja) * 1994-10-31 1996-05-21 Nec Corp メモリデータ訂正装置
US6237116B1 (en) 1998-11-16 2001-05-22 Lockheed Martin Corporation Testing error correcting code feature in computers that do not have direct hardware features for causing single bit and multi-bit errors
US7174477B2 (en) * 2003-02-04 2007-02-06 Micron Technology, Inc. ROM redundancy in ROM embedded DRAM
JP4578226B2 (ja) * 2004-12-17 2010-11-10 富士通セミコンダクター株式会社 半導体メモリ
JP4980565B2 (ja) * 2004-12-21 2012-07-18 富士通セミコンダクター株式会社 半導体メモリ
US20110219266A1 (en) * 2010-03-04 2011-09-08 Qualcomm Incorporated System and Method of Testing an Error Correction Module
KR20150106145A (ko) * 2014-03-11 2015-09-21 삼성전자주식회사 메모리 장치에서의 프로그램 오퍼레이션 방법 및 리드 오퍼레이션 방법
CN109215723B (zh) * 2017-07-05 2022-10-14 艾尔默斯半导体股份公司 检查寄存器单元或存储器单元的固定故障的方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4531213A (en) * 1982-03-03 1985-07-23 Sperry Corporation Memory through checking system with comparison of data word parity before and after ECC processing
JPS598061A (ja) * 1982-07-07 1984-01-17 Hitachi Ltd エラ−訂正・検出回路の診断方法
US4561095A (en) * 1982-07-19 1985-12-24 Fairchild Camera & Instrument Corporation High-speed error correcting random access memory system
JPS59146497A (ja) * 1983-01-29 1984-08-22 Fujitsu Ltd メモリ読出し方式
JPS59206951A (ja) * 1983-05-11 1984-11-22 Mitsubishi Electric Corp 制御記憶誤り検出回路の診断方式
JPS60136998A (ja) * 1983-12-26 1985-07-20 Fujitsu Ltd 半導体記憶装置

Also Published As

Publication number Publication date
EP0268289A2 (de) 1988-05-25
EP0268289B1 (de) 1994-08-31
US4878220A (en) 1989-10-31
EP0268289A3 (en) 1989-11-08
DE3750460T2 (de) 1995-04-06
JPS63129600A (ja) 1988-06-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee