DE3585731D1 - Dram-zelle und verfahren. - Google Patents
Dram-zelle und verfahren.Info
- Publication number
- DE3585731D1 DE3585731D1 DE8585114821T DE3585731T DE3585731D1 DE 3585731 D1 DE3585731 D1 DE 3585731D1 DE 8585114821 T DE8585114821 T DE 8585114821T DE 3585731 T DE3585731 T DE 3585731T DE 3585731 D1 DE3585731 D1 DE 3585731D1
- Authority
- DE
- Germany
- Prior art keywords
- dram cell
- dram
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
- H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US67966384A | 1984-12-07 | 1984-12-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3585731D1 true DE3585731D1 (de) | 1992-04-30 |
Family
ID=24727834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8585114821T Expired - Lifetime DE3585731D1 (de) | 1984-12-07 | 1985-11-22 | Dram-zelle und verfahren. |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0187237B1 (de) |
| JP (1) | JPS61185965A (de) |
| CN (1) | CN1004734B (de) |
| DE (1) | DE3585731D1 (de) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3780840T2 (de) * | 1986-03-03 | 1993-03-25 | Fujitsu Ltd | Einen rillenkondensator enthaltender dynamischer speicher mit wahlfreiem zugriff. |
| GB2199696B (en) * | 1987-01-06 | 1990-11-14 | Samsung Semiconductor Inc | Submerged storage plate memory cell |
| US4830978A (en) * | 1987-03-16 | 1989-05-16 | Texas Instruments Incorporated | Dram cell and method |
| US4916524A (en) * | 1987-03-16 | 1990-04-10 | Texas Instruments Incorporated | Dram cell and method |
| JPS6486561A (en) * | 1987-06-17 | 1989-03-31 | Nec Corp | Vertical mos transistor |
| US4816884A (en) * | 1987-07-20 | 1989-03-28 | International Business Machines Corporation | High density vertical trench transistor and capacitor memory cell structure and fabrication method therefor |
| US4833516A (en) * | 1987-08-03 | 1989-05-23 | International Business Machines Corporation | High density memory cell structure having a vertical trench transistor self-aligned with a vertical trench capacitor and fabrication methods therefor |
| JPH01260854A (ja) * | 1988-04-12 | 1989-10-18 | Fujitsu Ltd | 半導体記憶装置 |
| US5001525A (en) * | 1989-03-27 | 1991-03-19 | International Business Machines Corporation | Two square memory cells having highly conductive word lines |
| KR910013554A (ko) * | 1989-12-08 | 1991-08-08 | 김광호 | 반도체 장치 및 그 제조방법 |
| KR920004028B1 (ko) * | 1989-11-20 | 1992-05-22 | 삼성전자 주식회사 | 반도체 장치 및 그 제조방법 |
| JPH10223853A (ja) * | 1997-02-04 | 1998-08-21 | Mitsubishi Electric Corp | 半導体装置 |
| US6180975B1 (en) * | 1998-10-30 | 2001-01-30 | International Business Machines Corporation | Depletion strap semiconductor memory device |
| KR101110545B1 (ko) * | 2009-11-10 | 2012-01-31 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
| US8569816B2 (en) * | 2011-04-21 | 2013-10-29 | Freescale Semiconductor, Inc. | Isolated capacitors within shallow trench isolation |
| CN109888001B (zh) * | 2019-02-03 | 2021-02-02 | 中国科学院微电子研究所 | 半导体器件及其制造方法及包括该器件的电子设备 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52141590A (en) * | 1976-05-21 | 1977-11-25 | Hitachi Ltd | Semiconductor memory cell |
| JPS5519820A (en) * | 1978-07-27 | 1980-02-12 | Nec Corp | Semiconductor device |
| JPS58213464A (ja) * | 1982-06-04 | 1983-12-12 | Nec Corp | 半導体装置 |
| JPS5919366A (ja) * | 1982-07-23 | 1984-01-31 | Hitachi Ltd | 半導体記憶装置 |
| JPS5982761A (ja) * | 1982-11-04 | 1984-05-12 | Hitachi Ltd | 半導体メモリ |
-
1985
- 1985-05-13 CN CN85103376.8A patent/CN1004734B/zh not_active Expired
- 1985-11-22 EP EP85114821A patent/EP0187237B1/de not_active Expired
- 1985-11-22 DE DE8585114821T patent/DE3585731D1/de not_active Expired - Lifetime
- 1985-12-06 JP JP60274862A patent/JPS61185965A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0187237A3 (en) | 1987-02-04 |
| CN85103376A (zh) | 1986-11-19 |
| JPS61185965A (ja) | 1986-08-19 |
| CN1004734B (zh) | 1989-07-05 |
| EP0187237A2 (de) | 1986-07-16 |
| EP0187237B1 (de) | 1992-03-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |