DE3584189D1 - Halbleiterspeichergeraet. - Google Patents

Halbleiterspeichergeraet.

Info

Publication number: DE3584189D1
Authority: DE; Germany
Prior art keywords: storage device; semiconductor storage; semiconductor; storage
Prior art date: 1984-05-04
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE8585400865T

Other languages

English (en)

Inventor

Yoshihiro Takemae

Tomio Nakano

Kimiaki Sato

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fujitsu Ltd

Original Assignee

Fujitsu Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-05-04

Filing date

1985-05-03

Publication date

1991-10-31

1985-05-03 Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd

1991-10-31 Application granted granted Critical

1991-10-31 Publication of DE3584189D1 publication Critical patent/DE3584189D1/de

2005-05-04 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H01L29/93—
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Databases & Information Systems (AREA)
Dram (AREA)
Static Random-Access Memory (AREA)

DE8585400865T 1984-05-04 1985-05-03 Halbleiterspeichergeraet. Expired - Fee Related DE3584189D1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP59088331A JPS60234295A (ja)	1984-05-04	1984-05-04	半導体記憶装置

Publications (1)

Publication Number	Publication Date
DE3584189D1 true DE3584189D1 (de)	1991-10-31

Family

ID=13939890

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8585400865T Expired - Fee Related DE3584189D1 (de)	1984-05-04	1985-05-03	Halbleiterspeichergeraet.

Country Status (5)

Country	Link
US (1)	US4636982A (de)
EP (1)	EP0165106B1 (de)
JP (1)	JPS60234295A (de)
KR (1)	KR890004457B1 (de)
DE (1)	DE3584189D1 (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS61199297A (ja) *	1985-02-28	1986-09-03	Toshiba Corp	半導体記憶装置
JPS62197992A (ja) *	1986-02-25	1987-09-01	Mitsubishi Electric Corp	ダイナミツクｒａｍ
JPH07111823B2 (ja) *	1986-03-18	1995-11-29	三菱電機株式会社	半導体記憶装置
JPH06101229B2 (ja) *	1986-09-09	1994-12-12	三菱電機株式会社	ダイナミツク・ランダム・アクセス・メモリ
US4789967A (en) *	1986-09-16	1988-12-06	Advanced Micro Devices, Inc.	Random access memory device with block reset
JPS63113298U (de) *	1987-01-12	1988-07-21
JPH07107797B2 (ja) *	1987-02-10	1995-11-15	三菱電機株式会社	ダイナミツクランダムアクセスメモリ
US5172335A (en) *	1987-02-23	1992-12-15	Hitachi, Ltd.	Semiconductor memory with divided bit load and data bus lines
US4935901A (en) *	1987-02-23	1990-06-19	Hitachi, Ltd.	Semiconductor memory with divided bit load and data bus lines
US5222047A (en) *	1987-05-15	1993-06-22	Mitsubishi Denki Kabushiki Kaisha	Method and apparatus for driving word line in block access memory
US5274596A (en) *	1987-09-16	1993-12-28	Kabushiki Kaisha Toshiba	Dynamic semiconductor memory device having simultaneous operation of adjacent blocks
US4975874B1 (en) *	1988-11-01	1997-09-23	Texas Instruments Inc	Metrix interconnection system with different width conductors
US5758148A (en) *	1989-03-10	1998-05-26	Board Of Regents, The University Of Texas System	System and method for searching a data base using a content-searchable memory
US4989180A (en) *	1989-03-10	1991-01-29	Board Of Regents, The University Of Texas System	Dynamic memory with logic-in-refresh
US5777608A (en) *	1989-03-10	1998-07-07	Board Of Regents, The University Of Texas System	Apparatus and method for in-parallel scan-line graphics rendering using content-searchable memories
JP2875321B2 (ja) *	1990-01-29	1999-03-31	沖電気工業株式会社	半導体記憶装置
US5036493A (en) *	1990-03-15	1991-07-30	Digital Equipment Corporation	System and method for reducing power usage by multiple memory modules
JP3058431B2 (ja) *	1990-06-12	2000-07-04	株式会社東芝	半導体記憶装置
KR920005150A (ko) *	1990-08-31	1992-03-28	김광호	씨모오스디램의 센스 앰프 구성방법
KR950004853B1 (ko) *	1991-08-14	1995-05-15	삼성전자 주식회사	저전력용 블럭 선택 기능을 가지는 반도체 메모리 장치
JPH05144263A (ja) *	1991-11-20	1993-06-11	Fujitsu Ltd	半導体記憶装置
JP3068352B2 (ja) *	1992-12-01	2000-07-24	日本電気株式会社	半導体メモリ
JP2566517B2 (ja) *	1993-04-28	1996-12-25	三菱電機株式会社	ダイナミック型半導体記憶装置
US6148034A (en) *	1996-12-05	2000-11-14	Linden Technology Limited	Apparatus and method for determining video encoding motion compensation vectors
US6404660B1 (en) *	1999-12-23	2002-06-11	Rambus, Inc.	Semiconductor package with a controlled impedance bus and method of forming same
US7120761B2 (en) *	2000-12-20	2006-10-10	Fujitsu Limited	Multi-port memory based on DRAM core
US6889304B2 (en)	2001-02-28	2005-05-03	Rambus Inc.	Memory device supporting a dynamically configurable core organization
US7500075B1 (en)	2001-04-17	2009-03-03	Rambus Inc.	Mechanism for enabling full data bus utilization without increasing data granularity
US6825841B2 (en) *	2001-09-07	2004-11-30	Rambus Inc.	Granularity memory column access
US6903956B2 (en) *	2002-09-27	2005-06-07	Oki Electric Industry Co., Ltd.	Semiconductor memory device
US8190808B2 (en) *	2004-08-17	2012-05-29	Rambus Inc.	Memory device having staggered memory operations
US7280428B2 (en)	2004-09-30	2007-10-09	Rambus Inc.	Multi-column addressing mode memory system including an integrated circuit memory device
US7254075B2 (en) *	2004-09-30	2007-08-07	Rambus Inc.	Integrated circuit memory system having dynamic memory bank count and page size
US8595459B2 (en) *	2004-11-29	2013-11-26	Rambus Inc.	Micro-threaded memory
US7130238B1 (en) *	2005-01-21	2006-10-31	Altera Corporation	Divisible true dual port memory system supporting simple dual port memory subsystems
US7289369B2 (en) *	2005-04-18	2007-10-30	International Business Machines Corporation	DRAM hierarchical data path
CN1870873A (zh) *	2005-05-28	2006-11-29	深圳富泰宏精密工业有限公司	铰链装置及应用该铰链装置的便携式电子装置
US20070260841A1 (en)	2006-05-02	2007-11-08	Hampel Craig E	Memory module with reduced access granularity
US9268719B2 (en)	2011-08-05	2016-02-23	Rambus Inc.	Memory signal buffers and modules supporting variable access granularity
JP2013114701A (ja) *	2011-11-25	2013-06-10	Toshiba Corp	半導体記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2647394C2 (de) *	1976-10-20	1978-11-16	Siemens Ag, 1000 Berlin Und 8000 Muenchen	MOS-Halbleiterspeicherbaustein
JPS58147884A (ja) *	1982-02-26	1983-09-02	Toshiba Corp	ダイナミック型半導体記憶装置
US4520465A (en) *	1983-05-05	1985-05-28	Motorola, Inc.	Method and apparatus for selectively precharging column lines of a memory
JPS60136087A (ja) *	1983-12-23	1985-07-19	Hitachi Ltd	半導体記憶装置
JPH0743925B2 (ja) *	1984-03-28	1995-05-15	株式会社日立製作所	半導体記憶装置

1984
- 1984-05-04 JP JP59088331A patent/JPS60234295A/ja active Granted
1985
- 1985-05-01 US US06/729,200 patent/US4636982A/en not_active Expired - Fee Related
- 1985-05-03 KR KR8503025A patent/KR890004457B1/ko not_active IP Right Cessation
- 1985-05-03 DE DE8585400865T patent/DE3584189D1/de not_active Expired - Fee Related
- 1985-05-03 EP EP85400865A patent/EP0165106B1/de not_active Expired - Lifetime

Also Published As

Publication number	Publication date
JPS60234295A (ja)	1985-11-20
KR890004457B1 (en)	1989-11-04
EP0165106A2 (de)	1985-12-18
JPH0527194B2 (de)	1993-04-20
US4636982A (en)	1987-01-13
EP0165106B1 (de)	1991-09-25
KR850008569A (ko)	1985-12-18
EP0165106A3 (en)	1989-02-15

Publication	Publication Date	Title
DE3576433D1 (de)	1990-04-12	Halbleiterspeichervorrichtung.
DE3581773D1 (de)	1991-03-28	Halbleiterspeichervorrichtung.
DE3584189D1 (de)	1991-10-31	Halbleiterspeichergeraet.
DE3684509D1 (de)	1992-04-30	Halbleiterspeichergeraet.
DE3681082D1 (de)	1991-10-02	Halbleiterspeichervorrichtung.
DE3685361D1 (de)	1992-06-25	Halbleiterspeichervorrichtung.
DE3584702D1 (de)	1992-01-02	Halbleiterlaservorrichtung.
DE3177183D1 (de)	1990-06-21	Halbleiterspeichergeraet.
DE3580953D1 (de)	1991-01-31	Entladungsvorrichtung.
DE3584330D1 (de)	1991-11-14	Halbleiterlaservorrichtung.
DE3484514D1 (de)	1991-06-06	Halbleiterspeichergeraet.
DE3686994D1 (de)	1992-11-26	Halbleiterspeicher.
DE3587748D1 (de)	1994-03-24	Halbleiterlaseranordnung.
DE3484232D1 (de)	1991-04-11	Halbleiterspeichervorrichtung.
DE3584799D1 (de)	1992-01-16	Halbleitervorrichtung.
DE3687322D1 (de)	1993-02-04	Halbleiterspeicheranordnung.
DE3770953D1 (de)	1991-08-01	Halbleiterspeichervorrichtungen.
DE3585733D1 (de)	1992-04-30	Halbleiterspeichereinrichtung mit lese-aenderung-schreib-konfiguration.
DE3575498D1 (de)	1990-02-22	Halbleiter-fotodetektorvorrichtung.
DE3767579D1 (de)	1991-02-28	Nichtfluechtige halbleiter-speichereinrichtung.
DE3581370D1 (de)	1991-02-21	Halbleitervorrichtung.
DE3587052D1 (de)	1993-03-18	Halbleiterspeichergeraet.
DE68920946D1 (de)	1995-03-16	Halbleiter-Speichereinrichtung.
DE3675445D1 (de)	1990-12-13	Halbleiterspeicheranordnung.
DE3680562D1 (de)	1991-09-05	Halbleiterspeicheranordnung.

Legal Events

Date	Code	Title	Description
1992-10-22	8364	No opposition during term of opposition
1995-05-11	8339	Ceased/non-payment of the annual fee