DE102013107225A1 - Optoelectronic component arrangement, method for producing an optoelectronic component arrangement, method for operating an optoelectronic component arrangement - Google Patents

Abstract

In various embodiments, an optoelectronic component arrangement (100) is provided, the optoelectronic component arrangement (100) comprising: a first organic light-emitting diode structure (102), a second organic light-emitting diode structure (104) and an alternating current source (106) or an alternating voltage source (108 ), wherein the first organic light-emitting diode structure (102) is arranged to provide a light having a first color location; wherein the second organic light emitting diode structure (104) is arranged to provide a light having a second color location; wherein the first color location and the second color location are different; and wherein the second organic light-emitting diode structure (104) is formed at least partially in the light path of the first organic light-emitting diode structure (102); and wherein the alternating current source (106) or the alternating voltage source (108) is arranged to energize the light-emitting diode structures (102, 104) and is electrically connected to the light-emitting diode structures (102, 104) such that a current passes through at a first half-wave the first organic light-emitting diode structure (102) flows and the second organic light-emitting diode structure (104) is electrically blocked, and at a second half-wave a current flows through the second organic light emitting diode structure (104) and the first organic light emitting diode structure (102 ) electrically locks, wherein the first half-wave has a different current direction than the second half-wave.

Description

In various embodiments, an optoelectronic component arrangement, a method for producing an optoelectronic component arrangement, and a method for operating an optoelectronic component arrangement are provided.

Organic-based optoelectronic components, for example organic light-emitting diodes (OLEDs), are finding widespread use in general lighting. When operating a lighting, the regulation of the color location is a special feature, as a mood can be transported via the color location. For example, people react via their photoreceptors to warm white light rather relaxing while cold white light tends to promote their concentration.

An organic opto-electronic device, such as an OLED, may include an anode and a cathode having an organic functional layer system therebetween. The organic functional layer system may include one or more emitter layers in which electromagnetic radiation is generated, one or more charge carrier pair generation layer structures each of two or more charge generating layers (CGL) Charge pair generation, and one or more electron block, also referred to as hole transport layer (HTL), and one or more Lochblockadeschichten, also referred to as electron transport layer (s) (ETL) to the To direct current flow.

The luminance of OLEDs is limited, among other things, by the maximum current density that can flow through the diode. To increase the luminance of an OLED, it is known to combine one or more OLEDs in series with each other - so-called stacked OLED or a tandem OLED.

During operation, in the red, green and blue emitter layers (RGB emitters) of a white OLED, different aging processes take place, which can cause a visible color shift. As a result, the operating time of the white OLED may be limited or a correction may be necessary.

In a conventional method, an organic light emitting diode is operated with a direct current.

In various conventional methods, light-emitting diodes or organic light-emitting diodes are controlled in accordance with the power grid with an alternating current.

6 shows a conventional method for operating a light emitting diode array.

Shown are two identical organic light-emitting diodes 602 . 604 which are connected in anti-parallel with each other and with an AC power source 606 are connected. One of the LEDs 602 . 604 used in AC operation for the other LED 604 . 602 as a diode rectifier. In AC operation emits only one LED 602 during the positive half wave and only the other light emitting diode 604 during the negative half-wave of the current pulse. In various conventional methods are the identical organic light-emitting diodes 602 . 604 stacked in the area next to each other or one above the other and can emit blue light, for example.

In another conventional method, an OLED stack (OLED stack) is formed with conductivity-doped transport layers, which consist of laterally alternating regions with pin or nip doping. The "p" stands for a p-doped semiconducting layer, "n" for an n-doped semiconductive layer, and "i" for an intrinsic layer. The realization of this structure is technically complicated, since there is the danger of the reaction of the reactive p- and n-dopants. Furthermore, such a structure actually constitutes a parallel connection of many antiparallel-connected, adjacent light-emitting diodes of the same emission wavelength.

In another conventional method, different inorganic light emitting diodes having different emission wavelengths are used. Depending on the circuit of the inorganic light emitting diodes in the CIE diagram, a color location between the color locations of the individual LEDs can be set via the AC parameters. In this case, however, light emitting diodes of the same emission wavelength for AC operation are always connected electrically in antiparallel and light emitting diodes of a different emission wavelength parallel thereto. The light-emitting diodes may be surrounded by a glass, for example.

In another conventional method, a color-tunable OLED is formed by means of inverted stacked OLED units. However, the OLED has only one OLED unit with a fluorescent blue emitter and another OLED unit of the OLED in separate layers a red and green phosphorescent emitter. These OLED units are connected in parallel and therefore unsuitable for AC operation. For both OLED units different voltages are required for a color variation.

In a further conventional method, a plurality of adjacent monolithically stacked OLEDs with intermediate contacts are formed. The stacked OLEDs are connected in parallel, for example in pinip configuration, and can be connected by an external interconnection to a network of antiparallel OLEDs, which are then operable in AC operation.

In another conventional method, an AC drive mode is used for LEDs in which a string of inorganic LEDs of one color is provided with a series capacitance or coil. Through this circuit, a low-pass filter is installed, which switches off these LEDs at high frequencies, whereby a frequency-dependent color adjustment of the entire LED system is realized.

In various embodiments, an optoelectronic component arrangement, a method for producing an optoelectronic component arrangement and a method for operating an optoelectronic component arrangement are provided, with which it is possible to monolithically integrate electrically anti-parallel connected organic light emitting diodes of different color locations and thereby realize a color mixing in AC operation.

In various embodiments, an optoelectronic component arrangement may comprise a plurality of optoelectronic components. An optoelectronic component can be understood to mean an embodiment of an electronic component, the optoelectronic component having an optically active region. The optically active region can absorb electromagnetic radiation and form a photocurrent therefrom or emit electromagnetic radiation by means of an applied voltage to the optically active region.

In the context of this description, provision of electromagnetic radiation can be understood as meaning emission of electromagnetic radiation.

In the context of this description, absorption of electromagnetic radiation can be understood to mean absorption of electromagnetic radiation.

An optoelectronic component which has two planar, optically active sides can, for example, be transparent, for example as a transparent organic light-emitting diode.

However, the optically active region can also have a planar, optically active side and a flat, optically inactive side, for example an organic light-emitting diode which is set up as a top emitter or bottom emitter.

An optoelectronic component which emits electromagnetic radiation may in various embodiments be a semiconductor device emitting electromagnetic radiation and / or as an electromagnetic radiation emitting diode, as a diode emitting organic electromagnetic radiation, as a transistor emitting electromagnetic radiation or as electromagnetic radiation be formed emitting organic transistor.

The electromagnetic radiation may, for example, be light in the visible range, UV radiation and / or infrared radiation.

In this context, the electromagnetic radiation emitting device may be formed, for example, as a light emitting diode (LED) as an organic light emitting diode (OLED), as a light emitting transistor or as an organic light emitting transistor.

The light emitting device may be part of an integrated circuit in various embodiments. Furthermore, a plurality of light-emitting components may be provided, for example electrically connected in series or in parallel.

In the context of this description, an organic substance can be understood as meaning a compound of the carbon characterized by characteristic physical and chemical properties, regardless of the particular state of matter, in chemically uniform form. Furthermore, in the context of this description, an inorganic substance can be understood as meaning a compound without carbon or a simple carbon compound, characterized by characteristic physical and chemical properties, regardless of the particular state of matter, in chemically uniform form. In the context of this description, under an organic-inorganic substance (hybrid substance), regardless of the respective state of matter, in a chemically uniform form present, characterized by characteristic physical and chemical properties compound containing carbon compounds and free of carbon are to be understood. In the context of this description, the term "substance" encompasses all substances mentioned above, for example an organic substance, an inorganic substance, and / or a hybrid substance. Furthermore, in the context of this description, a substance mixture can be understood to mean something which consists of constituents of two or more different substances whose constituents are, for example, distributed very finely. A substance class means a substance or a mixture of one or more organic substances, one or more inorganic substances or one or more hybrid substances. The term "material" can be used synonymously with the term "substance".

In the context of this description, the term dye can be understood as meaning a substance which can emit light by means of a transition of an electron from a first energetic state into a second energetic state, wherein the first energetic state has greater energy than the second energetic state, and wherein the Wavelength of the emitted light is indirectly proportional to the energy change of the electron between the two energetic states. In various embodiments, a dye may also be referred to as an emitter or emitter material. In various embodiments, a dye may comprise or be formed from an organic substance. In various embodiments, a dye layer may include or be formed from a dye. In one embodiment, a dye layer may comprise one or more different dyes distributed in a matrix. The matrix may, for example, comprise an organic substance, for example a polymer.

In the context of this description, a color of a light can be understood to mean a wavelength range of an electromagnetic radiation physiologically associated with the color or color valence. In the context of this description, a color valence can be understood as meaning a physiological, colored effect of an electromagnetic radiation. A color valence can be determined as an indistinguishable range of color locations (Cx, Cy) in a CIE color standard panel.

The term "translucent" or "translucent layer" may in various embodiments be understood to mean that a layer is transparent to light, for example for the light generated by the light-emitting component, for example one or more wavelength ranges, for example for light in a wavelength range of the visible Light (for example at least in a partial region of the wavelength range from 380 nm to 780 nm). By way of example, the term "translucent layer" in various exemplary embodiments is to be understood as meaning that substantially all of the light quantity coupled into a structure (for example a layer) is also coupled out of the structure (for example layer), whereby part of the light can be scattered in this case For example, by the translucent layer having scattering centers.

The term "transparent" or "transparent layer" can be understood in various embodiments that a layer is transparent to light (for example, at least in a subregion of the wavelength range of 380 nm to 780 nm), wherein in a structure (for example, a layer) coupled-in light is also coupled out without any scattering or light conversion from the structure (for example, layer). Thus, "transparent" in various embodiments is to be regarded as a special case of "translucent".

In the event, for example, that a light-emitting monochrome or emission-limited electronic component is to be provided, it is sufficient for the optically translucent layer structure to be translucent at least in a partial region of the wavelength range of the desired monochromatic light or for the limited emission spectrum.

In various embodiments, the optoelectronic component arrangement can be set up as a so-called top and bottom emitter. A top and / or bottom emitter can also be referred to as an optically transmissive component, for example a transparent or translucent organic light-emitting diode.

In various embodiments, an optoelectronic component arrangement is provided, comprising the optoelectronic component arrangement: a first organic light-emitting diode structure, a second organic light-emitting diode structure and an alternating voltage source or an alternating current source, wherein the first organic light emitting diode structure is adapted to provide a light with a first color location; wherein the second organic light-emitting diode structure is arranged to provide a light having a second color location; wherein the first color location and the second color location are different; and wherein the second organic light emitting diode structure is at least partially formed in the light path of the first organic light emitting diode structure; and wherein the alternating voltage source or the alternating current source is set up for energizing the light-emitting diode structures and is electrically connected to the light-emitting diode structures in such a way that a current flows through the first half-wave organic light-emitting diode structure flows and the second organic light-emitting diode structure electrically blocks, and at a second half-wave, a current flows through the second organic light-emitting diode structure and the first organic light-emitting diode structure electrically blocks, wherein the first half-wave has a different current direction than that second half-wave.

The current direction refers to the direction of the current flow through the optoelectronic component.

In one embodiment, the first organic light-emitting diode structure may have a first electrode, a second electrode and a first organic functional layer structure therebetween, wherein the first electrode has a different polarity than the second electrode.

In one embodiment, the second light-emitting diode structure may have a third electrode, a fourth electrode and a second organic functional layer structure therebetween, wherein the third electrode has a different polarity than the fourth electrode.

In one embodiment, the first electrode can be connected to the fourth electrode physically and electrically (for example electrically conductively). In other words, the first electrode and the fourth electrode may be formed as an electrical node, i. H. have the same electrical potential during operation.

In one embodiment, the second electrode can be connected to the third electrode physically and electrically (for example electrically conductively). In other words, the second electrode and the third electrode may be formed as an electrical node, i. H. have the same electrical potential during operation.

In one embodiment, the second electrode and the third electrode may be formed as a common electrode.

In one embodiment, the optoelectronic component arrangement may further comprise a first contact pad and a second contact pad, wherein the contact pads are formed such that the first organic light-emitting diode structure and the second organic light-emitting diode structure are electrically connected by means of the contact pads with the AC power source or the AC voltage source , For example, the first contact pad may be electrically connected to the first electrode and the fourth electrode, and the second contact pad may be electrically connected to the second electrode and the third electrode.

In one embodiment, the first organic light emitting diode structure and the second organic light emitting diode structure may form a stacked structure, wherein the first organic light emitting diode structure is at least partially formed on the second organic light emitting diode structure or wherein the second organic light emitting diode structure at least partially formed on the first organic light-emitting diode structure.

In one embodiment, the first electrode, the second electrode, the third electrode and / or the fourth electrode can / be transparent or translucent.

In one embodiment, the third electrode may be formed at least as a part of the second electrode or the second electrode may be formed at least as a part of the third electrode.

In one embodiment, at least part of the first light-emitting diode structure may be free of the second light-emitting diode structure, or at least part of the second light-emitting diode structure may be free of the first light-emitting diode structure.

In various embodiments, a region of an organic light emitting diode structure that is free of another organic light emitting diode structure may also be understood as a structured region. Such structuring may be used to form a chroma contrast between the region having an organic light-emitting diode structure and the region having a plurality of organic light-emitting diode structures in the optical path, for example for information reproduction. An information reproduction can be designed, for example, as representing a pictogram, an ideogram or a lettering.

In one embodiment, the first color location and the second color location may have a different color valence.

In one embodiment, the first organic light emitting diode structure and the second organic light emitting diode structure each comprise a dye for generating light, wherein the first organic light emitting diode structure comprises a fluorescent dye and the second organic light emitting diode structure comprises a phosphorescent dye; or wherein the second organic light emitting diode structure comprises a fluorescent dye and the first organic light emitting diode structure comprises a phosphorescent dye.

In one embodiment, the first color locus may have a blue light and the second color locus be associated with a red-green light or a yellow light.

In one embodiment, the second color locus may be associated with a blue light and the first color locus with a red-green light or a yellow light.

In one embodiment, the first organic light emitting diode structure and the second organic light emitting diode structure may be formed such that the color location of the light, which is formed from a mixing of first color location and second color location, with a cold white light or a warm white light is associated.

In one embodiment, the first organic light-emitting diode structure may have a blue light-emitting fluorescent emitter and the second organic light-emitting diode structure may have a mixed red-green light-emitting phosphorescent emitter.

In one embodiment, the stack structure may have a first terminal and a second terminal, wherein the terminals for electrically connecting the first organic light emitting diode structure and the second organic light emitting diode structure are formed with the AC voltage source or AC power source.

In one configuration, the first terminal may be electrically connected to the first electrode and / or the fourth electrode and the second terminal may be electrically connected to the second electrode and / or third electrode.

In one embodiment, the first organic light-emitting diode structure may have a doped pin structure or a doped nip structure.

In one embodiment, the second organic light-emitting diode structure may have a doped pin structure or a doped nip structure.

A pin structure may have a layer sequence consisting of a p-doped semiconducting layer, an intrinsic layer and an n-doped semiconductive layer. A nip structure may have a layer sequence inverted to the pin structure.

In one embodiment, the first organic light-emitting diode structure and the second organic light-emitting diode structure can be connected to one another in an electrically antiparallel manner.

In one embodiment, the optoelectronic component arrangement may further comprise a carrier, wherein the first organic light-emitting diode structure and the second organic light-emitting diode structure are formed on or above the carrier.

In one embodiment, the first organic light-emitting diode structure and the second organic light-emitting diode structure may be monolithically formed on or above the carrier.

In one embodiment, the optoelectronic component arrangement may further comprise a wavelength-converting structure at least partially in the light path of the first organic light emitting diode and / or the second organic light emitting diode.

In one embodiment, the optoelectronic component arrangement may further comprise a light scattering structure at least partially in the light path of the first organic light emitting diode and / or the second organic light emitting diode.

In one embodiment, at least one optically active side of the first organic light-emitting diode structure and / or the second organic light-emitting diode structure have structured regions, for example arranged laterally on an optically active side.

In one embodiment, the structured regions of the at least one optically active side can be set up as scattering centers, for example microlenses, an optical grating; a mirror structure, such as a photonic crystal or a metal mirror and / or as an at least partially transmissive mirror structure.

In one embodiment, the structured regions may be formed such that the structured regions provide light with a different color locus than unstructured regions, for example for information reproduction. An information reproduction can be designed, for example, as representing a pictogram, an ideogram or a lettering.

In one embodiment, the AC voltage source or AC source may be configured to control the temporal electrical current profile, and may comprise, for example, a phase dimmer, a pulse modulator or a frequency modulator.

In one embodiment, the phase dimmer may be configured for phase-angle control or phase-section control of the electrical current through the first organic light-emitting diode structure and / or through the second organic light-emitting diode structure.

In one embodiment, the pulse modulator can be set up for a pulse width modulation or a pulse amplitude modulation of the electric current through the first organic light-emitting diode structure and / or through the second organic light-emitting diode structure.

In one embodiment, the frequency modulator may be configured to change the frequency of the alternating electrical current through the first organic light-emitting diode structure and / or through the second organic light-emitting diode structure.

In an embodiment, the optoelectronic component arrangement may further comprise a photodetector device, wherein the photodetector device is designed to measure the color locus of the light emitted by the optoelectronic component arrangement.

In one embodiment, the photodetector device may comprise one or more photodetectors, for example one or more photodiodes.

In one embodiment, the photodetector device may be coupled to the AC voltage source or the AC power source such that the AC waveform or the AC voltage waveform is changed or stabilized based on the measured color locus.

In one embodiment, the optoelectronic component arrangement may further comprise a driver structure, wherein the driver structure is connected to the first contact pad, the second contact pad, the photodetector device and the AC power source or AC voltage source. The photodetector device may provide a measurement signal that is applied as an input to the driver structure of the optoelectronic device array. The driver structure can be set up to regulate the alternating current profile and / or the alternating voltage curve of the optoelectronic component arrangement. The driver structure can be set up in such a way that the driver structure regulates the current profile or the voltage profile of the alternating voltage source and / or the alternating current source by means of evaluating the measurement signal of the photodetector device. As a result, the color location of the light in the image plane of the optoelectronic component arrangement can be changed.

In various embodiments, there is provided a method of fabricating an optoelectronic component array, the method comprising: forming a first organic light emitting diode structure to provide a light having a first color location; Forming a second organic light-emitting diode structure for providing a light having a second color locus, the first color locus and the second color locus being different; and wherein the second organic light emitting diode structure is at least partially formed in the light path of the first organic light emitting diode structure; Connecting the light-emitting diode structures to an alternating voltage source or an alternating current source, wherein the alternating voltage source or the alternating current source is set up for energizing the light-emitting diode structures and is electrically connected to the light-emitting diode structures in such a way that a current flows through the first organic light-emitting diode at a first half-wave. Structure flows and the second organic light-emitting diode structure electrically blocks, and at a second half-wave, a current flows through the second organic light-emitting diode structure and the first organic light-emitting diode structure electrically blocks, wherein the first half-wave has a different current direction than the second half-wave.

In one embodiment of the method, the first organic light-emitting diode structure may be formed with a first electrode, a second electrode and a first organic functional layer structure therebetween, wherein the first electrode has a different polarity than the second electrode.

In one configuration of the method, the second light-emitting diode structure may be formed with a third electrode, a fourth electrode and a second organic functional layer structure therebetween, wherein the third electrode has a different polarity than the fourth electrode.

In one embodiment of the method, the first electrode and the fourth electrode may be formed such that the first electrode is connected to the fourth electrode physically and electrically (for example electrically conductively).

In one embodiment of the method, the second electrode and the third electrode may be formed such that the second electrode is connected to the third electrode physically and electrically (for example, electrically conductive).

In one embodiment of the method, the second electrode and the third electrode may be formed as a common electrode.

In one embodiment of the method, the method may further comprise forming a first contact pad and a second contact pad, wherein the contact pads are formed such that the first organic light emitting diode structure and the second organic light emitting diode structure by means of the contact pads are electrically connected to the AC power source or the AC power source. For example, the first contact pad may be electrically connected to the first electrode and the fourth electrode, and the second contact pad may be electrically connected to the second electrode and the third electrode.

In one embodiment of the method, the first organic light emitting diode structure and the second organic light emitting diode structure may be formed as a stacked structure, wherein the first organic light emitting diode structure is at least partially formed on the second organic light emitting diode structure or wherein the second organic light emitting diode structure Light-emitting diode structure is at least partially formed on the first organic light emitting diode structure.

In one embodiment of the method, the first electrode, the second electrode, the third electrode and / or the fourth electrode can be made transparent or translucent.

In one embodiment of the method, the third electrode may be formed at least as a part of the second electrode, or the second electrode may be formed at least as a part of the third electrode.

In one embodiment of the method, at least part of the first light-emitting diode structure can be formed free of second light-emitting diode structure, or at least part of the second light-emitting diode structure can be formed free of first light-emitting diode structure.

In one embodiment of the method, the first color locus and the second color locus may have a different color valence.

In one embodiment of the method, the first organic light-emitting diode structure and the second organic light-emitting diode structure can each be formed with a dye for generating light, wherein the first organic light-emitting diode structure is formed having a fluorescent dye and the second organic light-emitting diodes Structure having a phosphorescent dye is formed; or wherein the second organic light-emitting diode structure is formed with a fluorescent dye having and the first organic light-emitting diode structure is formed with a phosphorescent dye comprising.

In one configuration of the method, the first organic light-emitting diode structure and the second organic light-emitting diode structure may be formed such that the first color locus is associated with a blue light and the second color locus with a red-green light or a yellow light.

In one configuration of the method, the first organic light-emitting diode structure may have a blue light-emitting fluorescent emitter and the second organic light-emitting diode structure may have a mixed red-green light-emitting phosphorescent emitter.

In one configuration of the method, the first organic light-emitting diode structure and the second organic light-emitting diode structure may be formed such that the second color locus is associated with a blue light and the first color locus with a red-green light or a yellow light.

In one embodiment of the method, the first organic light-emitting diode structure and the second organic light-emitting diode structure may be formed such that the color locus of the light, which is formed from a mixing of the first color locus and the second color locus, with a cold white light or a warm white light is associated.

In one embodiment of the method, the stack structure of first light-emitting diode structure and second light-emitting diode structure having a first terminal and a second terminal, wherein the terminals for electrically connecting the first organic light emitting diode structure and the second organic light emitting diode structure with the AC voltage source or AC source can be formed.

In one embodiment of the method, the first connection can be formed electrically connected to the first electrode and / or the fourth electrode and the second connection to be formed electrically connected to the second electrode and / or third electrode.

In one embodiment of the method, the first organic light-emitting diode structure may be formed having a doped pin structure or a doped nip structure.

In one embodiment of the method, the second organic light-emitting diode structure may be formed having a doped pin structure or a doped nip structure.

In one embodiment of the method, the first organic light-emitting diode structure and the second organic light-emitting diode structure can be formed electrically connected in anti-parallel with each other.

In one configuration of the method, the method may further comprise providing a carrier, wherein the first organic light-emitting diode structure and the second organic light-emitting diode structure are formed on or above the carrier.

In one embodiment of the method, the first organic light-emitting diode structure and the second organic light-emitting diode structure can be monolithically formed on or above the carrier.

In one embodiment of the method, the method may further comprise forming a wavelength-converting structure at least partially in the light path of the first organic light emitting diode and / or the second organic light emitting diode.

In one embodiment of the method, the method may further comprise forming a light scattering structure at least partially in the light path of the first organic light emitting diode and / or the second organic light emitting diode.

In one configuration of the method, at least one optically active side of the first organic light-emitting diode structure and / or the second organic light-emitting diode structure may have structured regions, for example arranged laterally on an optically active side.

In one embodiment of the method, the structured regions of the at least one optically active side can be set up as scattering centers, for example microlenses, an optical grating; a mirror structure, such as a photonic crystal or a metal mirror and / or as an at least partially transmissive mirror structure.

In one embodiment of the method, the structured regions can be formed such that the structured regions provide light with a different color locus than unstructured regions, for example for information reproduction.

In one configuration of the method, the alternating voltage source or the alternating current source can be set up to control the temporal electrical current profile, for example, have a phase dimmer, a pulse modulator or a frequency modulator.

In one configuration of the method, the phase dimmer can be set up for phase-angle control and / or phase-section control of the electrical current through the first organic light-emitting diode structure or through the second organic light-emitting diode structure.

In one configuration of the method, the pulse modulator can be set up for pulse width modulation and / or pulse amplitude modulation of the electric current through the first organic light-emitting diode structure or through the second organic light-emitting diode structure.

In one configuration of the method, the frequency modulator can be set up to change the frequency of the alternating electrical current through the first organic light-emitting diode structure or through the second organic light-emitting diode structure.

In an embodiment of the method, the method may further comprise providing a photodetector device, wherein the photodetector device is arranged to measure the color locus of the light emitted by the component device.

In one embodiment of the method, the photodetector device can have one or more photodetectors, for example a photodiode.

In one embodiment of the method, the photodetector device may be coupled to the AC voltage source or the AC source such that the AC or AC voltage is changed based on the measured color location.

In various embodiments, a method for operating an optoelectronic component device is provided, the method comprising: applying an alternating current and / or an ac voltage to an optoelectronic component according to one of the embodiments described above; Measuring at least one optoelectronic property of the optoelectronic component device; Change at least one AC parameter or at least one AC voltage parameter due to the at least one measured optoelectronic property.

In one embodiment of the method, the AC power source or the AC power source may provide an AC and / or AC voltage having a frequency greater than about 30 Hz.

In one embodiment of the method, by means of the alternating current or the alternating voltage, the color location of a light which consists of the mixture of the portion of the first Color location is formed with the proportion of the second color locus, wherein the proportion refers to the entire, provided by the optoelectronic component light.

In one embodiment of the method, the first half-wave and / or the second half-wave may have one of the following forms or a mixed form of one of the following forms: a pulse, a sine half-wave, a rectangle, a triangle, a sawtooth.

In one embodiment of the method, the first half-wave and the second half-wave may be formed asymmetrically.

In one embodiment of the method, the first half-wave may have a different maximum amount than the second half-wave.

In one embodiment of the method, the alternating current can have a direct current component, or the alternating voltage can have a direct voltage component.

In one embodiment of the method, the maximum amount of the first half-wave may be greater than the maximum amount of the second half-wave.

In one embodiment of the method, the first half-wave may have a different pulse width than the second half-wave.

In one embodiment of the method, the first half-wave may have a greater pulse width than the second half-wave.

In one configuration of the method, the optoelectronic component device may have a first operating mode and at least one second operating mode, wherein the operating modes are set and / or formed by means of the alternating voltage or the alternating current.

In one embodiment of the method, the optoelectronic component device in the first operating mode can provide a light with a higher correlated color temperature than in the second operating mode.

In one embodiment of the method, the measurement of at least one optoelectronic property can be formed by means of the photodetector device.

In one embodiment of the method, the changing of at least one alternating current parameter or at least one alternating voltage parameter can be embodied as a compensation of different aging of the different dyes of the first organic light-emitting diode structure and the second organic light-emitting diode structure. As a result, the lifetime and / or the color stability of the optoelectronic component arrangement can be extended since a phosphorescent dye can have a different aging behavior than a fluorescent dye.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

1 a schematic representation of an optoelectronic component array, according to various. Embodiments;

2a , b schematic representations of various embodiments of optoelectronic component arrangements;

3a , b schematic representations of various embodiments of optoelectronic component arrangements;

4a , b schematic representations of various embodiments of optoelectronic component arrangements;

5a , b are schematic representations of a method for operating an optoelectronic component array, according to various embodiments;

6 a conventional method for operating a light emitting diode array.

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the described figure (s). Because components of embodiments can be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be construed in a limiting sense, and the scope of the present invention is defined by the appended claims.

As used herein, the terms "connected," "connected," and "coupled" are used to describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

1 shows a schematic representation of an optoelectronic component array, according to various embodiments.

Shown is an organic optoelectronic device 100 as an exemplary embodiment of an optoelectronic component arrangement having a first organic light-emitting diode structure 102 and a second organic light emitting diode structure 104 formed so as to be anti-parallel with each other with an AC power source 106 or an AC source 108 are electrically connected. The organic light-emitting diode structures 102 . 104 are electrically connected with each other with respect to the organic optoelectronic component 100 applied AC voltage or to the organic optoelectronic component 100 applied alternating current, that at a first half-wave of an alternating voltage or an alternating current, for example a positive half-wave, a current through the first organic light-emitting diode structure 102 flows and the second organic light-emitting diode structure 104 electrically locks, and at a second half-wave, for example, a negative half-wave, a current through the second organic light-emitting diode structure 104 flows and the first organic light-emitting diode structure 102 electrically locks.

In various embodiments, the first organic light-emitting diode structure 102 and the second organic light emitting diode structure 104 designed so that they emit light of different color. In one embodiment, the two color loci may differ such that the two color loci are associated with different color valences, for example a blue light and a green light, or for example a blue light and a green-red light.

In various embodiments, a mixing shaft and / or an alternating shaft may be or have, for example, a mixed voltage, an alternating voltage, a mixed current or an alternating current. In this case, a change shaft is a special case of a mixing shaft in which the time-constant component, for example the DC component or the DC component, is zero.

In various embodiments, a mixing shaft may have positive and / or negative half-waves. In the context of this description, a positive half cycle may comprise that part of a mixing wave whose value as a function of time is greater than zero; and a negative half-wave having the part of a mixing wave whose value as a function of time is less than zero. The temporal ratio of positive half-wave to negative half-wave, d. H. the relative proportion of positive half-wave on the mixing shaft to the relative fraction of the negative half-wave of a mixing wave may have an amount in a range of about 0% to 100%.

In other words, a mixing wave can have purely positive, purely negative or positive values and negative values in any mixing ratios, for example a positive half wave can have a share of the mixing wave of 70%, while the negative half wave has a share of the mixing wave of 30% ,

A positive and / or negative half-wave may, in various embodiments, have a shape similar to a geometric half-wave, for example a half period of a sine wave, a sawtooth curve, a rectangular curve, a triangle curve; or for example in the form of a pulse or peak, for example Gaussian, Lorenz-shaped or a similar peak-like shape; for example, similar to a rectified AC voltage. Further embodiments are 5 shown.

2a , b show schematic representations of various embodiments of optoelectronic component arrangements.

Shown in 2a and 2 B are embodiments of vertically stacked light-emitting diode structures 102 . 104 , wherein the light-emitting diode structures 102 . 104 For example, the first organic light-emitting diode structure may emit light with a different color location 102 a red-green light emitted and the second organic light-emitting diode structure 104 emits a blue light. 2a shows in the growth direction pin-pin transitions, while in the embodiment in 2 B these transitions are formed inverted (nip-nip).

Shown are: a stack structure 230 with a first organic light emitting diode structures 102 and a second organic light emitting diode structures 104 on or over a common carrier 202 are formed.

The carrier 202 For example, it can serve as a support element for electronic elements or layers, for example light-emitting elements. For example, the carrier 202 Glass, quartz, and / or a semiconductor material or any other suitable substance or be formed therefrom. Furthermore, the carrier can 202 comprise or be formed from a plastic film or a laminate with one or more plastic films. The plastic may include or be formed from one or more polyolefins (eg, high or low density polyethylene or PE) or polypropylene (PP). Further, the plastic may include or be formed from polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN). The carrier 202 may comprise one or more of the above substances.

The carrier 202 may include or be formed from a metal or metal compound, for example copper, silver, gold, platinum or the like.

A carrier 202 Having a metal or a metal compound may also be formed as a metal foil or a metal-coated foil.

The carrier 202 can be translucent or even transparent.

On or above the vehicle 202 In various embodiments, a barrier layer can optionally be arranged (not shown). The barrier layer may include or consist of one or more of the following: alumina, zinc oxide, zirconia, titania, hafnia, tantalum lanthania, silica, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, and mixtures and alloys thereof. Further, in various embodiments, the barrier layer may have a layer thickness in a range of about 0.1 nm (one atomic layer) to about 5000 nm, for example, a layer thickness in a range of about 10 nm to about 200 nm, for example, a layer thickness of about 40 nm ,

In various embodiments, on or over the barrier layer (or, if the barrier layer is absent, on or above the support 202 ) the first organic light-emitting diode structure 102 and the second organic light emitting diode structure 104 be arranged.

The first organic light-emitting diode structure 102 can be a first electrode 204 and a second electrode 212 having, between the electrodes 204 . 212 a first organic functional layer structure 226 is trained.

The first electrode 204 can, for example, in the form of a first electrode layer 204 be upset. The first electrode 204 may be formed of or be made of an electrically conductive substance, such as a metal or a conductive conductive oxide (TCO), or a layer stack of multiple layers of the same metal or different metals and / or TCO or different TCOs. Transparent conductive oxides are transparent, conductive substances, for example metal oxides, such as, for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal oxygen compounds such as ZnO, SnO ₂ , or In ₂ O _{3 also} include ternary metal oxygen compounds such as AlZnO, Zn ₂ SnO ₄ , CdSnO ₃ , ZnSnO ₃ , MgIn ₂ O ₄ , GaInO ₃ , Zn ₂ In ₂ O ₅ or In ₄ Sn ₃ O ₁₂ or mixtures of different transparent conductive oxides to the group of TCOs and can be used in various embodiments. Furthermore, the TCOs do not necessarily correspond to a stoichiometric composition and may also be p-doped or n-doped.

In various embodiments, the first electrode 204 have a metal; for example, Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds, combinations or alloys of these substances, for example MgAg.

In various embodiments, the first electrode 204 are formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.

In various embodiments, the first electrode 204 have one or more of the following substances as an alternative or in addition to the above-mentioned substances: networks of metallic nanowires and particles, for example of Ag; Networks of carbon nanotubes; Graphene particles and layers; Networks of semiconducting nanowires.

Furthermore, the first electrode 204 having electrically conductive polymers or transition metal oxides or electrically conductive transparent oxides.

In various embodiments, the first electrode 204 and the carrier 202 be formed translucent or transparent. By doing Case, that the first electrode 204 comprises or is formed of a metal, the first electrode 204 For example, have a layer thickness of less than or equal to about 25 nm, for example, a layer thickness of less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 18 nm 204 For example, have a layer thickness of greater than or equal to about 10 nm, for example, a layer thickness of greater than or equal to about 15 nm. In various embodiments, the first electrode 204 a layer thickness in a range of about 10 nm to about 25 nm, for example, a layer thickness in a range of about 10 nm to about 18 nm, for example, a layer thickness in a range of about 15 nm to about 18 nm.

Furthermore, in the event that the first electrode 204 has a conductive transparent oxide (TCO) or is formed therefrom, the first electrode 204 For example, a layer thickness in a range of about 50 nm to about 500 nm, for example, a layer thickness in a range of about 75 nm to about 250 nm, for example, a layer thickness in a range of about 100 nm to about 150 nm.

Furthermore, in the event that the first electrode 204 For example, from a network of metallic nanowires, such as Ag, which may be combined with conductive polymers, a network of carbon nanotubes that may be combined with conductive polymers, or formed from graphene layers and composites, the first electrode 204 For example, a layer thickness in a range of about 1 nm to about 500 nm, for example, a layer thickness in a range of about 10 nm to about 400 nm, for example, a layer thickness in a range of about 40 nm to about 250 nm.

The first electrode 204 may be formed as an anode, that is, as a hole-injecting electrode or as a cathode, that is, as an electron-injecting electrode.

The first electrode 204 may comprise a first electrical contact pad, to which a first electrical potential (provided by a power source (not shown), for example a current source or a voltage source) can be applied. Alternatively, the first electrical potential to the carrier 202 be created or be and then then indirectly to the first electrode 204 be created or be. The first electrical potential may be, for example, the ground potential or another predetermined reference potential.

In various embodiments, the first organic functional layer structure 226 one or more first emitter layer (s) 208 between a first p-type hole injection layer 206 and a first n-doped electron injection layer 210 is trained. The emitter layers 208 For example, they may have fluorescent and / or phosphorescent emitters. An electron injection layer 210 may also be referred to as an electron transport layer or hole blocker layer, wherein an electron injection layer 210 can have several different sub-layers. A hole injection layer 206 may also be referred to as hole transport layer or electron block layer, wherein a hole injection layer 206 can have several different sub-layers.

Examples of emitter materials used in the optoelectronic component array 100 according to various embodiments for the emitter layer (s) 208 can be used include organic or organometallic compounds such as derivatives of polyfluorene, polythiophene and polyphenylene (e.g., 2- or 2,5-substituted poly-p-phenylenevinylene) as well as metal complexes such as iridium complexes such as blue phosphorescent FIrPic (Bis (3,5-difluoro-2- (2-pyridyl) phenyl- (2-carboxypyridyl) -iridium III), green phosphorescing Ir (ppy) ₃ (tris (2-phenylpyridine) iridium III), red phosphorescent Ru (dtb) bpy) ₃ x 2 (PF ₆ ) (tris [4,4'-di-tert-butyl- (2,2 ') -bipyridine] ruthenium (III) complex) and blue fluorescent DPAVBi (4,4-bis [4 - (di-p-tolylamino) styryl] biphenyl), green fluorescent TTPA (9,10-bis [N, N-di (p-tolyl) amino] anthracene) and red fluorescent DCM2 (4-dicyanomethylene) -2- methyl-6-ylolidyl-9-enyl-4H-pyran) as a non-polymeric emitter. Such non-polymeric emitters can be deposited by means of thermal evaporation, for example. Furthermore, it is possible to use polymer emitters which can be deposited in particular by means of a wet-chemical method, for example a spin-coating method (also referred to as spin coating).

The emitter materials may be suitably embedded in a matrix material.

It should be noted that other suitable emitter materials are also provided in other embodiments.

The emitter materials of the emitter layer (s) 208 of the light emitting device 100 For example, may be selected so that the light-emitting device 100 White light emitted. The emitter layer (s) 208 can / can several different colors (for example blue and yellow or blue, green and red) have emitting emitter materials, alternatively, the emitter layer (s) can / 208 also be composed of several sub-layers, such as a blue fluorescent emitter layer 208 or blue phosphorescent emitter layer 208 , a green phosphorescent emitter layer 208 and a red phosphorescent emitter layer 208 , By mixing the different colors, the emission of light can result in a white color impression. Alternatively, it can also be provided to arrange a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation of the first organic light-emitting diode structure and / or the second organic light-emitting diode structure and emits secondary radiation of a different wavelength, so that a (not yet white) primary radiation by the combination of primary radiation and secondary radiation gives a white color impression.

The first organic functional layer structure 226 may generally comprise one or more electroluminescent layers. The one or more electroluminescent layers may or may comprise organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules ("small molecules") or a combination of these substances. For example, the first organic functional layer structure 226 have one or more electroluminescent layers, which is or are designed as a hole transport layer, so that, for example, in the case of an OLED, an effective hole injection into an electroluminescent layer or an electroluminescent region is made possible. Alternatively, in various embodiments, the first organic functional layer structure 226 have one or more functional layers, which is or are designed as an electron transport layer, so that, for example, in an OLED effective electron injection into an electroluminescent layer or an electroluminescent region is made possible. As the material for the hole transport layer, for example, tertiary amines, carbazole derivatives, conductive polyaniline or Polythylendioxythiophen can be used. In various embodiments, the one or more electroluminescent layers may be embodied as an electroluminescent layer.

In various embodiments, the hole injection layer 206 on or above the first electrode 204 deposited, for example, be deposited, and the emitter layer 208 can be on or above the hole injection layer 206 be deposited, for example, be deposited. In various embodiments, the electron injection layer 210 on or above the emitter layer 208 applied, for example, be deposited.

In various embodiments, the first organic functional layer structure 226 (ie, for example, the sum of the thicknesses of hole injection layer (s) 206 and. Emitter layer (s) 208 and electron injection layer (s) 210 ) have a layer thickness of at most approximately 1.5 μm, for example a layer thickness of at most approximately 1.2 μm, for example a layer thickness of approximately approximately 1 μm, for example a layer thickness of approximately approximately 800 nm, for example a layer thickness of approximately approximately 500 nm, For example, a layer thickness of at most about 400 nm, for example, a layer thickness of at most about 300 nm. In various embodiments, the first organic functional layer structure 226 For example, a stack of a plurality of directly superimposed organic light-emitting diodes (OLEDs), each OLED may have, for example, a layer thickness of at most about 1.5 microns, for example, a layer thickness of about 1.2 microns, for example, a layer thickness of at most about 1 micron , for example a layer thickness of at most approximately 800 nm, for example a layer thickness of at most approximately 500 nm, for example a layer thickness of approximately approximately 400 nm, for example a layer thickness of approximately approximately 300 nm. In various exemplary embodiments, the first organic functional layer structure 226 For example, have a stack of two, three or four directly superimposed OLEDs, in which case, for example, organic functional layer structure 226 may have a layer thickness of at most about 3 microns.

The optoelectronic component arrangement 100 Optionally, further organic functional layers, for example arranged on or over the one or more emitter layers, can be optionally used 208 or on or above the electron injection layer (s) 210 which serve the functionality and thus the efficiency of the optoelectronic component array 100 continue to improve.

On or above the organic functional layer structure 226 or optionally on or over the one or more further organic functional layer structures, the second electrode 212 (For example in the form of a second electrode layer 212 ) be applied.

In various embodiments, the second electrode 212 have the same substances or be formed from it as the first electrode 204 , wherein in various embodiments, metals are particularly suitable.

In various embodiments, the second electrode 212 (For example, in the case of a metallic second electrode 212 ), for example a layer thickness of less than or equal to about 45 nm, for example a layer thickness of less than or equal to about 40 nm, for example a layer thickness of less than or equal to about 35 nm, for example a layer thickness of less than or equal to about 30 nm, for example, a layer thickness of less than or equal to about 25 nm, for example, a layer thickness of less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 15 nm, for example, a layer thickness of less than or equal to about 10 nm ,

The second electrode 212 may generally be formed or be similar to the first electrode 204 , or different from this. The second electrode 212 may be formed in various embodiments of one or more of the substances and with the respective layer thickness or be, as above in connection with the first electrode 204 described. In various embodiments, the first electrode 204 and the second electrode 212 both translucent or transparent. Thus, the illustrated optoelectronic component arrangement 100 as a top and bottom emitter (in other words as a transparent light-emitting component 100 ) be formed.

The second electrode 212 may be formed as an anode, that is, as a hole-injecting electrode or as a cathode, that is, as an electron-injecting electrode.

The second electrode 212 may include a second electrical terminal to which a second electrical potential (which is different than the first electrical potential) provided by the power source 106 / 108 , can be applied. For example, the second electric potential may have a value such that the difference from the first electric potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 1.7V to about 15V, for example, a value in a range of about 2V to about 12V.

On or above the second electrode 212 may be the second organic light emitting diode structure 104 be educated. The second organic light-emitting diode structure 104 may be a third electrode and a fourth electrode 220 wherein between the third electrode and the fourth electrode 220 a second organic functional layer structure 228 is trained.

In various embodiments, the second electrode and the third electrode may be used as a common electrode 212 be formed (shown).

In various embodiments, the second organic light-emitting diode structure 104 at least partially on or above the first light-emitting diode structure 102 be formed (shown), or the first organic light-emitting diode structure 102 at least partially on or above the second light-emitting diode structure 104 be educated.

In various embodiments, the common electrode 212 also be referred to as an intermediate electrode. The intermediate electrode 212 can be transparent or translucent. The intermediate electrode 212 may be formed from or have an optically transmissive, electrically conductive material. For example, the intermediate electrode 212 a transparent conducting oxide (TCO) or a thin metal layer. A thin metal layer 212 as intermediate electrode 212 For example, it may comprise or be formed from one of the following: silver, gold, platinum, palladium, copper, aluminum, magnesium, chromium, for example MgAg. In various embodiments, the intermediate electrode 212 have an electrically conductive carbon compound, which is characterized by a high electrical conductivity and high transmissivity, for example, an electrically conductive polymer, graphite, graphene, carbon nanotubes, for example with a wall (single wall carbon nanotube - SWCNT) or with multiple walls (multi wall carbon nanotube - MWCNT), for example functionalized carbon nanotubes, having chemically functional groups on the surface of the carbon nanotubes, for example phenyl groups or alkyl groups.

The intermediate electrode 212 may have a thickness in a range of about 1 nm to about 50 nm, for example in a range of about 2 nm to about 30 nm, for example in a range of about 3 nm to about 20 nm.

In various embodiments, the second organic functional layer structure 228 a second emitter layer 216 between a second p-type hole injection layer 214 and a second n-type electron injection layer 218 is trained.

In various embodiments, the second organic functional layer structure 228 similar to the first organic functional layer structure 226 be educated.

In various embodiments, the second n-doped electron injection layer 218 similar to one of the embodiments of the first n-doped hole injection layer 210 be educated.

In various embodiments, the first emitter layer 208 and the second emitter layer 216 each having a dye for generating light, wherein the first emitter layer 208 comprising a fluorescent dye and the second emitter layer 216 a phosphorescent dye; or wherein the second emitter layer 216 a fluorescent dye and the first emitter layer 208 having a phosphorescent dye. In one embodiment, the first organic light emitting diode structure 102 in the first emitter layer 206 a red-green phosphorescent dye and the second organic light-emitting diode structure 104 in the second emitter layer 216 have a blue fluorescent dye.

In one embodiment, the red-green phosphorescent dye may be in an emitter layer 208 . 216 be mixed or the red and green emitting dyes distributed in separate monochrome sublayers.

In various embodiments, the second p-type hole injection layer 214 similar to one of the embodiments of the first p-doped hole injection layer 206 be educated.

In various embodiments, the fourth electrode 220 be formed similar to one of the embodiments of the second electrode or third electrode, for example, have or be formed from a MgAg alloy.

The transition from n-doped regions to p-doped regions with an intermediate electrode, such as MgAg, may be a stable charge generation layer (CGL) layer structure. By means of a monolithic, vertical stacking of two or more organic light-emitting diode structures 102 . 104 with different emission wavelength can by contacting the second electrode and fourth electrode, for example in the form of the common electrode 212 between the organic light emitting diode structures 102 . 104 , and the first electrode 204 and / or fourth electrode 220 an anti-parallel circuit can be realized. The first electrode 204 and the fourth electrode 220 may additionally be electrically connected to each other, for example laterally with respect to the stack structure 230 , With this structure, an AC operation may be possible, the organic light emitting diode structures 102 . 104 alternately emit light or block the power. At frequencies above approximately 30 Hz, flicker can no longer be discernible to the human eye. When combining a blue-emitting organic light-emitting diode structure (blue organic light-emitting diode structure) and a red-green emitting organic light-emitting diode structure (red-green organic light-emitting diode structure), a white light can be emitted.

The color point of the light provided by the optoelectronic component array in its image plane can be adjusted via the AC operating parameters. This allows the different colored organic light-emitting diode structures 102 . 104 be driven differently and their respective contribution to the total light emission to be changed.

On or above the fourth electrode 220 and thus on or over the electrically active region, an encapsulation, for example in the form of a barrier thin layer / thin-layer encapsulation, can optionally also be or be formed.

In the context of this application, a "barrier thin film" or a "barrier thin film" can be understood, for example, as a layer or layer structure which is suitable for providing a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture) and oxygen , to build. In other words, the barrier thin layer is designed so that it can not be penetrated by OLED-damaging substances such as water, oxygen or solvents or at most to very small proportions.

According to one embodiment, the barrier thin film may be formed as a single layer (in other words, as a single layer). According to an alternative embodiment, the barrier thin film may have a plurality of sublayers formed on one another. In other words, according to one embodiment, the barrier thin film may be formed as a layer stack (stack). The barrier film or one or more sublayers of the barrier film may, for example, be formed by a suitable deposition process, e.g. Example by means of a Atomschichtabscheideverfahrens (Atomic Layer Deposition (ALD)) according to an embodiment, for. A plasma enhanced atomic layer deposition (PEALD) method or a plasmaless A plasma-less atomic layer deposition (PLALD) method, or by a chemical vapor deposition (CVD) method according to another embodiment, e.g. A plasma enhanced chemical vapor deposition (PECVD) or plasma-less chemical vapor deposition (PLCVD) process, or alternatively by other suitable deposition techniques.

By using an atomic layer deposition process (ALD) very thin layers can be deposited. In particular, layers can be deposited whose layer thicknesses are in the atomic layer region.

According to one embodiment, in the case of a barrier thin layer which has a plurality of partial layers, all partial layers can be formed by means of an atomic layer deposition method. A layer sequence comprising only ALD layers may also be referred to as "nanolaminate".

According to an alternative embodiment, in the case of a barrier thin layer which has a plurality of partial layers, one or more partial layers of the barrier thin layer can be deposited by means of a different deposition method than an atomic layer deposition method, for example by means of a vapor deposition method.

The barrier film may, according to one embodiment, have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example a layer thickness of about 10 nm to about 100 nm according to an embodiment, for example about 40 nm according to an embodiment.

According to an embodiment in which the barrier thin film has a plurality of partial layers, all partial layers may have the same layer thickness. According to another embodiment, the individual partial layers of the barrier thin layer may have different layer thicknesses. In other words, at least one of the partial layers may have a different layer thickness than one or more other of the partial layers.

The barrier thin layer or the individual partial layers of the barrier thin layer can be designed according to an embodiment as a translucent or transparent layer. In other words, the barrier film (or the individual sublayers of the barrier film) may consist of a translucent or transparent substance (or mixture of substances that is translucent or transparent).

According to one embodiment, the barrier thin layer or (in the case of a layer stack having a plurality of partial layers) one or more of the partial layers of the barrier thin layer may comprise or be formed from one of the following substances: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide lanthanium oxide, silicon oxide, Silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, and mixtures and alloys thereof. In various embodiments, the barrier thin film or (in the case of a stack of layers having a plurality of sublayers) one or more of the sublayers of the barrier film may comprise one or more high refractive index materials, in other words one or more high refractive index materials, for example having a refractive index of at least 2 ,

In various embodiments, an adhesive and / or a protective lacquer may be provided on or above the barrier thin film by means of which, for example, a cover (eg, a glass cover, a metal foil cover, a sealed plastic film cover) is attached to the barrier thin film, for example glued. In various embodiments, the optically translucent layer of adhesive and / or protective lacquer may have a layer thickness of greater than 1 μm, for example a layer thickness of several μm. In various embodiments, the adhesive may include or be a lamination adhesive.

In various embodiments, light-scattering particles which can lead to a further improvement in the color angle distortion and the coupling-out efficiency can also be embedded in the layer of the adhesive (also referred to as the adhesive layer). In various embodiments may be provided as light scattering particles, for example, dielectric scattering particles such as metal oxides such. For example, silicon oxide (SiO ₂ ), zinc oxide (ZnO), zirconium oxide (ZrO ₂ ), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (Ga ₂ O _X ) alumina, or titanium oxide. Other particles may also be suitable, provided that they have a refractive index which is different from the effective refractive index of the matrix of the translucent layer structure, for example air bubbles, acrylate or glass hollow spheres. Furthermore, for example, metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like may be provided as light-scattering particles.

In various embodiments, between the fourth electrode 220 and the layer of adhesive and / or protective lacquer nor an electrically insulating layer (not shown) or, for example, SiN, for example, having a layer thickness in a range of about 300 nm to about 1.5 μm, for example having a layer thickness in a range of about 500 nm to about 1 μm to protect electrically unstable materials, for example during a wet chemical process.

In various embodiments, the adhesive may be configured such that it itself has a refractive index that is less than the refractive index of the cover. Such an adhesive may, for example, be a low-refractive adhesive such as an acrylate having a refractive index of about 1.3. For example, in one embodiment, an adhesive may be a high refractive index adhesive having, for example, high refractive non-diffusing particles and an average refractive index approximately equal to the average refractive index of the organic functional layer structure, for example, in a range of about 1.7 to about 2.0. Furthermore, a plurality of different adhesives may be provided which form an adhesive layer sequence.

It should also be pointed out that in various embodiments it is also possible to completely dispense with an adhesive, for example in embodiments in which the cover, for example made of glass, is applied to the barrier thin film by means of, for example, plasma spraying.

In one embodiment, the cover, for example made of glass, for example by means of a frit bonding / glass soldering / seal glass bonding by means of a conventional glass solder in the geometric edge regions of the organic optoelectronic component 100 be applied with the barrier thin film.

In various embodiments, the cover and / or the adhesive may have a refractive index (for example, at a wavelength of 633 nm) of 1.55.

Furthermore, in various exemplary embodiments, one or more antireflection layers (for example, combined with the encapsulation, for example the barrier thin layer) in the optoelectronic component arrangement 100 be provided.

3a , b show schematic representations of various embodiments of optoelectronic component arrangements.

Is shown in 3a schematically a sectional plane and in 3b a schematic cross-sectional view of an embodiment of an optoelectronic component array 100 , For example, according to an embodiment of the descriptions of 1 or 2 ,

3a , b shows a large area organic light emitting diode having a stacked structure with a red-green light-emitting organic light emitting diode structure and a blue light emitting organic light emitting diode structure. The two light-emitting diode structures 102 . 104 may be in the plane at about the same location on or above the carrier 202 be formed, but offset in the vertical direction by a distance of, for example, less than about 1 micron from each other above the carrier 202 be educated.

In 3a is shown: the intermediate electrode 212 on or above the first electrode 204 on or above the vehicle 202 , wherein the intermediate electrode 212 with the connection 224 is electrically connected and the first electrode 204 with the electrical connection 222 electrically connected. The first electrode 204 and the intermediate electrode 212 are formed so that they can be electrically contacted without causing an electrical short circuit, for example by the first electrode 204 and the intermediate electrode 212 on different sides of the carrier 202 by means of contact pads 304 . 306 electrically contacted, for example, by the electrodes of different polarity overlap in a cross shape and are electrically isolated from each other (shown in FIG 3b ).

3B shows an embodiment of an optoelectronic component arrangement 100 similar to one of the embodiments of the descriptions of 1 or 2a , b.

Shown is how the fourth electrode 220 electrically and physically (for example, electrically conductive) with the first electrode 204 connected is. In various embodiments, the fourth electrode 220 the second organic functional layer structure 228 , the third electrode and second electrode, for example in the form of the intermediate electrode 224 , and the first organic functional layer structure 226 at least partially surrounded, wherein the fourth electrode is electrically isolated from these layers by means of an electrical insulation 302

The electrical insulation 302 may be arranged such that a current flow between two electrically conductive regions, for example between the fourth electrode 220 and the intermediate electrode 212 is prevented.

The substance or mixture of electrical insulation 302 for example, a Coating or a coating agent, for example a polymer and / or a paint. The lacquer may, for example, have a coating material which can be applied in liquid or in powder form, for example comprising or being formed from a polyimide. The electrical insulations 302 can be applied or formed, for example by means of a printing process, for example, structured. The printing method may include, for example, inkjet printing (inkjet printing), screen printing and / or pad printing (pad printing).

The electrical contacting of the stack structure 230 can in various embodiments at the geometric edge region, for example, in the optically inactive edge region of the carrier 202 in the form of contact pads 306 be educated.

In other words, in the geometric edge region, the optoelectronic component 100 be formed such that contact pads for electrically contacting the optoelectronic component 100 are formed (shown in 3a ), for example by electrically conductive layers, for example electrodes 204 . 212 in the area of contact pads 304 . 306 at least partially exposed (not shown).

A contact pad 304 . 306 may be electrically and / or physically (for example, electrically conductive) connected to one of the electrodes 204 . 212 . 220 the organic light-emitting diode structures 102 . 104 , A contact pad 304 . 306 However, it can also be considered as an area of an electrode 204 . 212 . 220 be furnished.

The contact pads 304 . 306 may be a substance or mixture of substances, a substance or a mixture of substances similar to one of the electrodes 204 . 212 . 220 according to one of the embodiments of the descriptions of 1 or formed therefrom, for example as a metal layer structure having at least one chromium layer and at least one aluminum layer, for example chromium-aluminum-chromium (Cr-Al-Cr).

4a , b show schematic representations of various embodiments of optoelectronic component arrangements.

In various embodiments, the first organic light emitting diode structure 102 and the second organic light emitting diode structure 104 a stack structure 230 form, wherein the first organic light-emitting diode structure on 102 at least partially on the second organic light emitting diode structure 104 is formed (not shown) or wherein the second organic light-emitting diode structure 104 at least partially on the first organic light emitting diode structure 102 is trained. In one embodiment (shown in FIG 4a , b) at least a part or an area of the first light-emitting diode structure 102 free of second light-emitting diode structure 104 be. In another embodiment (not shown), at least a portion of the second light-emitting diode structure 104 free of first light-emitting diode structure 102 be. In various embodiments, the third electrode may be formed at least as a part of the second electrode or the second electrode may be formed at least as a part of the third electrode. In other words, the first organic light-emitting diode structure 102 and the second organic light emitting diode structure 104 At least in part, a common electrode may share, with a portion of the common electrode being free of at least one of the organic light emitting diode structures 102 . 104 can be (shown in 4b ). The organic light-emitting diode structures 102 . 104 can provide light with different color locations that can be assigned different color valences.

4a For example, in different schematic views, b may show an exemplary embodiment of an optoelectronic component arrangement in which a second yellow light-emitting organic light-emitting diode structure is part of the area 104 . 402 on or over a first whole-area red light-emitting organic light-emitting diode structure 102 . 406 is formed stacked, wherein a part of the common electrode 212 on or above the first organic light-emitting diode structure 102 free of second organic light-emitting diode structure 104 is.

In this way, a red glowing area can be next to each other 406 and a yellowing area 402 be formed, as well as an area with a light mixture of red and yellow light. In one application example, such a monolithic light-emitting diode 100 Be part of the lighting of a vehicle, for example, as a taillight and turn signals in a car, with a slightly different architecture (not shown) as a top or bottom emitter.

In various embodiments, the optoelectronic component arrangement may be formed as an efficient area radiator, wherein the first organic light emitting diode structure 102 and / or the second organic light-emitting diode structure 104 can be structured, for example, structured surface. By means of a different lateral structuring of the first organic light-emitting diode structure 102 and / or the second organic light-emitting diode structure 104 can be areas with different emission wavelengths in be formed and operated the optoelectronic component array.

In various embodiments, the first organic light-emitting diode structure 102 with respect to the second organic light-emitting diode structure 104 be structured such that by means of the structuring a color contrast and / or a brightness contrast is formed, by means of which information can be displayed, for example, a pictogram, an ideogram or a lettering.

5a , b show schematic representations of a method for operating an optoelectronic component arrangement, according to various exemplary embodiments.

5a 1 schematically shows an embodiment of a method for operating an optoelectronic component arrangement, which relative to one another easily adjusting the time-averaged intensities of the organic light-emitting diode structures 102 . 104 according to one of the embodiments of the descriptions of 1 to 4 allowed.

Shown is an alternating current waveform with a current strength 504 as a function of time 502 that from an AC source 106 or an AC source 108 for operating the organic light emitting diode structures 102 . 104 is provided (see 1 ).

In various embodiments, the AC power source 106 or the AC source 108 provide an alternating current waveform having a first half-wave and a second half-wave, wherein the first half-wave has a different current direction than the second half-wave.

In the context of this description, a half-wave denotes the half-space of an alternating current curve or an alternating-voltage curve. In other words, a half-wave shall denote the sign or the quadrant in a Cartesian coordinate system by representing an alternating current waveform or an alternating voltage waveform as a function of time. A half-wave is not to be understood in the context of this description in the sense of half a period of a geometric function, for example, the proportion of an alternating current waveform or an alternating voltage waveform after half repetition. In other words, the "half" of a half wave refers to the current direction or the voltage direction of an alternating current waveform or an alternating voltage waveform and not to the time. A half-wave may also be referred to as a pulse, for example a current pulse or a voltage pulse, in a current direction or voltage direction. For example, a pulse may have one of the following shapes or a mixed form of the following shapes: sine halfwave, Gaussian peak, Lorentz shaped peak, Dirac shaped peak, a rectangle, a sawtooth, a triangle.

In various embodiments, an AC waveform or AC waveform may have more first halfwaves than second halfwaves, for example, by having multiple first halfwaves follow each other before a second halfwave follows. As a result, for example, one of the organic light-emitting diode structure can be energized more frequently than the other. As a result, for example, the color location and / or the brightness of the light in the image plane of the optoelectronic component arrangement can be set.

Shown is an alternating current waveform with a first half-wave 516 and a second half-wave 518 , wherein in the embodiment, the first half-wave 516 is associated with a positive current direction and the second half-wave 518 is associated with a negative current direction. In various embodiments, the first half-wave is energized 516 the first organic light-emitting diode structure 102 and the second half wave 518 the second organic light-emitting diode structure 104 (please refer 1 ).

The positive half wave 516 indicates as amount a first maximum current 506 on and the negative half wave 518 as the amount of a second maximum current 508 , The maximum amount of currents 506 . 508 can equal (shown in 5b ) or different (shown in 5a ) be. An alternating current curve with different maximum currents 506 . 508 can illustratively, for example by means of biasing one of the organic light-emitting diode structures 102 . 104 be generated with a DC voltage and an additional application of an alternating current.

A current profile which has a direct current component and an alternating current component can also be referred to as a mixed current.

A voltage profile which has a DC voltage component and an AC component can also be referred to as a mixed voltage.

For example, a rectified AC voltage may generate an AC current that has either only first half-waves or only second half-waves, wherein a biased, rectified AC voltage may also have a first half-wave and a second half-wave.

In various embodiments, a half-wave 516 . 518 a shape similar to the following forms: a geometric half-wave, for example, a sine wave half; a rectangle, a triangle, a sawtooth, a peak, for example Gaussian, Lorentz-shaped, Dirac-shaped or a similar peak shape. In various embodiments, the first half-wave and the second half-wave may have the same shape or different shapes. Half-waves with the same shape may be formed in different properties, such as the pulse width, the amount of maximum current and / or the amount of maximum voltage, the same or different.

In various embodiments, the first half-wave 516 a first pulse width 512 and the second half wave 518 a second pulse width 514 have, wherein the pulse widths equal (shown in FIG 5a ) or different (shown in 5b ) could be.

The alternating current curve can be set up such that the half-waves 516 . 518 a periodicity 510 exhibit, so that the half-waves 516 . 518 can repeat periodically with time in the AC waveform.

In other words, in the embodiment in FIG 5a become the organic light-emitting diode structures 102 . 104 with approximately the same pulse length 512 . 514 operated. The luminance of the light emitted by the organic light-emitting diode structures 102 . 104 can be emitted via the current pulse height 506 . 508 , ie the amount of currents of the half-waves, are set (pulse amplitude modulation, PAM), the organic light-emitting diode structures 102 . 104 are formed in this embodiment such that the luminance is proportional to the current intensity, with which the organic light-emitting diode structures 102 . 104 be energized.

In the embodiment in 5b become the organic light-emitting diode structures 102 . 146 with approximately the same current pulse height 506 . 508 operated. The luminance of the light emitted by the organic light-emitting diode structures 102 . 104 can be emitted over the pulse length 512 . 514 be set (pulse width modulation, PWM). By means of different pulse lengths 512 . 514 For example, the organic light-emitting diode structures can emit light of different intensity in a time-averaged manner.

6 shows a conventional method for operating a light-emitting diode array (see above).

In various embodiments, an optoelectronic component arrangement, a method for producing an optoelectronic component arrangement, and a method for operating an optoelectronic component arrangement are provided, with which it is possible to monolithically integrate electrically anti-parallel connected organic light-emitting diode structures. Furthermore, the optoelectronic component arrangement can be electrically contacted with only two electrical connections, as a result of which the technical outlay for wiring with regard to conventional optoelectronic component arrangements is reduced. Furthermore, it is possible that the optoelectronic component arrangement can be used with inexpensive AC drivers. By means of a series connection of the anti-parallel organic light-emitting diode structures, it is possible to realize a luminaire suitable for the grid, in which case a transformation of the driver voltage becomes optional. In addition, a very similar OLED stack can be realized as with white stacked OLEDs with charge generating layer (CGL) generating structures and thus established processes can be used. Furthermore, a lamp can be realized and operated, are used in the phosphorescent emitter (red-green emitter / RG emitter) and fluorescent emitter (blue emitter / B emitter) in different organic light-emitting diode structures. Furthermore, with the AC parameters, it is possible to set the color locus of the light which is emitted by the optoelectronic component arrangement. The different colors of the organic light-emitting diode structures arise practically at the same location, so that technically simpler structures for color mixing can be sufficient. Color control by means of a color sensor and feedback to the OLED driver can be used during the aging of the optoelectronic component arrangement for active stabilization of the color locus of the light which is emitted by the optoelectronic component arrangement. Furthermore, lateral structuring of at least one optically active side of at least one organic light-emitting diode structure makes it possible to form regions with different emission wavelengths. In addition, by using doped pin diodes, the dielectric strength with respect to reverse voltages can be increased because thicker organic layers can be used. Furthermore, degradation effects in the organic layers can be reduced by biasing the organic light emitting diode structures in the reverse direction in AC operation.

Claims (15)

Optoelectronic component arrangement ( 100 ), comprising: a first organic light-emitting diode structure ( 102 ), a second organic light-emitting diode structure ( 104 ) and an AC power source ( 106 ) or an AC source ( 108 ), Wherein the first organic light-emitting diode structure ( 102 ) is arranged to provide a light having a first color location; Wherein the second organic light-emitting diode structure ( 104 ) is arranged to provide a light having a second color location; • where the first color location and the second color location are different; and wherein the second organic light-emitting diode structure ( 104 ) at least partially in the light path of the first organic light emitting diode structure ( 102 ) is trained; and wherein the AC power source ( 106 ) or the AC voltage source ( 108 ) for energizing the light-emitting diode structures ( 102 . 104 ) is arranged and so with the light-emitting diode structures ( 102 . 104 ) is electrically connected, that at a first half-wave, a current through the first organic light-emitting diode structure ( 102 ) flows and the second organic light-emitting diode structure ( 104 ) electrically locks, and at a second half-wave current through the second organic light-emitting diode structure ( 104 ) and the first organic light-emitting diode structure ( 102 ) electrically locks, wherein the first half-wave has a different current direction than the second half-wave. Optoelectronic component arrangement ( 100 ) according to claim 1, further comprising a first contact pad ( 306 ) and a second contact pad ( 304 ), wherein the first contact pad ( 306 ) and the second contact pad ( 304 ) are formed such that the first organic light-emitting diode structure ( 102 ) and the second organic light-emitting diode structure ( 104 ) by means of the first contact pad ( 306 ) and the second contact pad ( 304 ) with the AC power source ( 106 ) or the AC voltage source ( 108 ) are electrically connected. Optoelectronic component arrangement ( 100 ) according to claim 1 or 2, wherein at least a part of the first organic light-emitting diode structure ( 102 ) free from the second organic light-emitting diode structure ( 104 ) or at least a part of the second organic light-emitting diode structure ( 104 ) free from the first organic light-emitting diode structure ( 102 ). Optoelectronic component arrangement ( 100 ) according to one of claims 1 to 3, wherein the first organic light-emitting diode structure ( 102 ) and the second organic light emitting diode structure each having a dye for generating light, wherein the first organic light emitting diode structure ( 102 ) has a fluorescent dye and the second organic light-emitting diode structure ( 104 ) has a phosphorescent dye; or wherein the second organic light-emitting diode structure ( 104 ) has a fluorescent dye and the first organic light-emitting diode structure ( 102 ) has a phosphorescent dye. Optoelectronic component arrangement ( 100 ) according to any one of claims 1 to 4, wherein the first organic light emitting diode structure comprises a blue light emitting fluorescent emitter and the second organic light emitting diode structure comprises a mixed red-green light emitting phosphorescent emitter. Optoelectronic component arrangement ( 100 ) according to one of claims 1 to 5, wherein the first organic light-emitting diode structure ( 102 ) and the second organic light-emitting diode structure ( 104 ) are electrically connected to each other in anti-parallel. Optoelectronic component arrangement ( 100 ) according to any one of claims 1 to 6, further comprising a dye structure at least partially in the light path of the first organic light emitting diode structure ( 102 ) and / or the second organic light-emitting diode structure ( 104 ). Optoelectronic component arrangement ( 100 ) according to one of claims 1 to 7, wherein the AC source ( 106 ) or AC source ( 108 ) for controlling the temporal electrical current profile ( 516 . 518 ), and in particular has a phase dimmer, a pulse modulator or a frequency modulator. Optoelectronic component arrangement ( 100 ) according to any one of claims 1 to 8, further comprising a photodetecting device arranged to measure the color locus of the light emitted by the optoelectronic component device ( 100 ) is emitted. Optoelectronic component arrangement ( 100 ) according to one of claims 1 to 9, wherein the photodetector device is connected to the AC power source ( 106 ) or the AC voltage source ( 108 ) is coupled such that the AC or the AC voltage is changed based on the measured color location. A method for producing an optoelectronic component arrangement, the method comprising: forming a first organic light-emitting diode structure ( 102 ) for providing a light having a first color location; Forming a second organic light-emitting diode structure ( 104 ) for providing a light having a second color location, the first color location and the second color location being different, and wherein the second organic light-emitting diode structure ( 104 ) at least partially in the light path of the first organic light-emitting diode structure ( 102 ) is formed; • connecting the light-emitting diode structures to an AC power source ( 106 ) or an AC source ( 108 ), the AC source ( 106 ) or the AC voltage source ( 108 ) for energizing the light-emitting diode structures ( 102 . 104 ) is arranged and so with the light-emitting diode structures ( 102 . 104 ) is electrically connected, that at a first half-wave, a current through the first organic light-emitting diode structure ( 102 ) flows and the second organic light-emitting diode structure ( 104 ) electrically locks, and at a second half-wave current through the second organic light-emitting diode structure ( 104 ) and the first organic light-emitting diode structure ( 102 ) electrically locks, wherein the first half-wave has a different current direction than the second half-wave. A method of operating an optoelectronic component device, the method comprising: Applying an alternating current and / or an alternating voltage to an optoelectronic component according to one of claims 1 to 9; Measuring at least one optoelectronic property of the optoelectronic component device; • Changing at least one AC parameter or at least one AC parameter due to the at least one measured optoelectronic property. Method according to claim 12, wherein the AC voltage source ( 108 ) or the AC power source ( 106 ) provide an alternating current and / or an alternating voltage having a frequency greater than about 30 Hz. A method according to claim 12 or 13, wherein the optoelectronic component device has a first operating mode and at least a second operating mode, wherein the operating modes are adjusted and / or formed by means of the AC voltage or the AC current. Method according to one of claims 12 to 14, wherein the changing of at least one AC parameter or at least one AC voltage parameter as a compensation of different aging of the different dyes of the first organic light emitting diode structure ( 102 ) and the second organic light-emitting diode structure ( 104 ) is trained.

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