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DE102012215235A1 - Sensor component has micro-electro mechanical system (MEMS) component that is integrated with pressure sensor, temperature sensor, humidity sensor and evaluation circuit - Google Patents

Sensor component has micro-electro mechanical system (MEMS) component that is integrated with pressure sensor, temperature sensor, humidity sensor and evaluation circuit Download PDF

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DE102012215235A1
DE102012215235A1 DE102012215235A DE102012215235A DE102012215235A1 DE 102012215235 A1 DE102012215235 A1 DE 102012215235A1 DE 102012215235 A DE102012215235 A DE 102012215235A DE 102012215235 A DE102012215235 A DE 102012215235A DE 102012215235 A1 DE102012215235 A1 DE 102012215235A1
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sensor
sensor component
component
evaluation circuit
integrated
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Hubert Benzel
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Robert Bosch GmbH
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Robert Bosch GmbH
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Priority to PCT/EP2013/067512 priority patent/WO2014033056A1/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0092—Pressure sensor associated with other sensors, e.g. for measuring acceleration or temperature
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00309—Processes for packaging MEMS devices suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
    • G01N27/223—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0278—Temperature sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
    • B81B2207/012—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being separate parts in the same package
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/244—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing characteristics of pulses or pulse trains; generating pulses or pulse trains
    • G01D5/245—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing characteristics of pulses or pulse trains; generating pulses or pulse trains using a variable number of pulses in a train
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
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  • Life Sciences & Earth Sciences (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Testing Or Calibration Of Command Recording Devices (AREA)
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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Micromachines (AREA)

Abstract

The sensor component (100) has a housing (17) having a MEMS component (10). The MEMS component is integrated with a pressure sensor (11), a temperature sensor (12), a humidity sensor (13) and an evaluation circuit (14). The housing is provided with a media access opening (28) for the pressure sensor. The humidity sensor is realized in the form of a capacitor assembly having a polymer dielectric.

Description

Stand der TechnikState of the art

Die Erfindung betrifft ein Sensorbauteil mit einem Gehäuse, in dem zumindest ein MEMS-Bauelement mit einer Drucksensorkomponente und eine Auswerteschaltung angeordnet sind, wobei das Gehäuse mindestens eine Medienzugangsöffnung für die Drucksensorkomponente aufweist.The invention relates to a sensor component having a housing, in which at least one MEMS component with a pressure sensor component and an evaluation circuit are arranged, wherein the housing has at least one media access opening for the pressure sensor component.

In der deutschen Offenlegungsschrift DE 10 2008 011 943 A1 wird ein Sensorbauteil der eingangs genannten Art beschrieben. Es umfasst ein mikromechanisches Drucksensorelement und einen Auswertechip, die in einem gemeinsamen Gehäuse angeordnet sind. Dazu wurden das Sensorelement und der Auswertechip side-by-side, also nebeneinander, auf einem Träger montiert und über Bonddrähte elektrisch verbunden. Diese Anordnung wurde dann unter Aussparung des sensitiven Bereichs des Sensorelements in eine Moldmasse eingebettet. Dementsprechend befindet sich in diesem Bereich des Moldgehäuses eine Medienzugangsöffnung für das Drucksensorelement.In the German Offenlegungsschrift DE 10 2008 011 943 A1 a sensor component of the type mentioned is described. It comprises a micromechanical pressure sensor element and an evaluation chip, which are arranged in a common housing. For this purpose, the sensor element and the evaluation chip side-by-side, ie side by side, were mounted on a support and electrically connected via bonding wires. This arrangement was then embedded in a molding compound with the recess of the sensitive area of the sensor element. Accordingly, there is a media access opening for the pressure sensor element in this region of the mold housing.

Auch die Gehäuse von Feuchtesensorelementen müssen mit einem Medienzugang ausgestattet sein. Die Signalerfassung erfolgt hier meist kapazitiv unter Verwendung eines feuchteabhängigen Dielektrikums. Aus der Praxis sind Feuchtesensorelemente bekannt mit zwei Interdigitalelektroden als Messkondensator, auf denen sich ein Polymer befindet. Da sich die Dielektrizitätszahl des Polymers mit dem Grad der Feuchte verändert, ist auch die Kapazität zwischen den Elektroden des Messkondensators feuchteabhängig. Des Weiteren bekannt sind Feuchtesensorelemente, bei denen eine Polymerschicht sandwichartig zwischen den beiden Messkondensatorelektroden angeordnet ist. In diesem Fall ist die obere Messkondensatorelektrode porös, so dass die Feuchte in das Polymer eindringen kann. Dadurch wird eine Kapazitätsänderung des Messkondensators bewirkt, die einfach mit Hilfe einer Auswerteschaltung ausgewertet werden kann.The housing of humidity sensor elements must be equipped with a media access. The signal detection here is usually capacitive using a moisture-dependent dielectric. In practice, moisture sensor elements are known with two interdigital electrodes as measuring capacitor, on which a polymer is located. Since the dielectric constant of the polymer changes with the degree of humidity, the capacitance between the electrodes of the measuring capacitor is also moisture-dependent. Also known are humidity sensor elements in which a polymer layer is sandwiched between the two measuring capacitor electrodes. In this case, the upper measuring capacitor electrode is porous, so that the moisture can penetrate into the polymer. This causes a capacitance change of the measuring capacitor, which can be easily evaluated with the aid of an evaluation circuit.

Bekannt sind außerdem Temperatursensoren in Chipform, die auf unterschiedlichen Messkonzepten basieren. So können Temperatursensoren beispielsweise in Form einer Bandgapschaltung oder einer Diodenschaltung realisiert werden.Also known are temperature sensors in chip form, which are based on different measurement concepts. Thus, temperature sensors can be realized for example in the form of a bandgap circuit or a diode circuit.

Offenbarung der ErfindungDisclosure of the invention

Mit der vorliegenden Erfindung wird vorgeschlagen, die Sensorfunktionen eines Drucksensors, eines Temperatursensors und eines Feuchtesensors in ein Sensorbauteil der eingangs genannten Art zu integrieren. Dies trägt zum einen zu einer Kostenreduzierung bei, was die Verpackung und auch die Fertigung der Sensorkomponenten betrifft, und zum anderen zu einem höheren Grad an Miniaturisierung von entsprechenden Endgeräten.With the present invention it is proposed to integrate the sensor functions of a pressure sensor, a temperature sensor and a humidity sensor in a sensor component of the type mentioned. This contributes to a cost reduction in terms of packaging and also the manufacture of the sensor components, and secondly to a higher degree of miniaturization of corresponding terminals.

Die erfindungsgemäß vorgeschlagene Integration der drei Sensorkomponenten, Drucksensor, Temperatursensor und Feuchtesensor, in einem Sensorbauteil kann grundsätzlich auf Chipebene und/oder auf Verpackungsebene realisiert werden.The inventively proposed integration of the three sensor components, pressure sensor, temperature sensor and humidity sensor, in a sensor component can in principle be implemented on the chip level and / or on the packaging level.

So werden in einer ersten vorteilhaften Ausführungsform der Erfindung alle drei Sensorkomponenten und die Auswerteschaltung auf einem einzigen Chip integriert. Aus fertigungstechnischen Gründen kann es aber auch von Vorteil sein, für die Auswerteschaltung einen eigenen ASIC-Chip vorzusehen, aber alle drei Sensorkomponenten auf einem MEMS-Bauelement zu integrieren. Des Weiteren erweist es sich als vorteilhaft, die Drucksensorkomponente mit der Temperatursensorkomponente in einem MEMS-Bauelement zu kombinieren und die Feuchtesensorkomponente mit der Auswerteschaltung in einem ASIC-Bauelement zu integrieren.Thus, in a first advantageous embodiment of the invention, all three sensor components and the evaluation circuit are integrated on a single chip. For manufacturing reasons, it may also be advantageous to provide a separate ASIC chip for the evaluation circuit, but to integrate all three sensor components on a MEMS component. Furthermore, it proves to be advantageous to combine the pressure sensor component with the temperature sensor component in a MEMS component and to integrate the moisture sensor component with the evaluation circuit in an ASIC component.

Auch die AVT (Aufbau- und Verbindungstechnik) bzw. die Verpackung der Sensorkomponenten eines erfindungsgemäßen Sensorbauteils kann in unterschiedlicher Form realisiert werden.Also, the AVT (assembly and connection technology) or the packaging of the sensor components of a sensor component according to the invention can be realized in different forms.

In einer bevorzugten Ausführungsform der Erfindung werden sämtliche Bauelemente des Sensorbauteils auf einem Träger montiert und mit einem Moldgehäuse versehen, insbesondere mit einem OCFM(open-cavity-full-mold)-Gehäuse. Diese Verpackungsvariante ist kostengünstig und schützt die Sensorkomponenten sowie die Auswerteschaltung und etwaige Bonddrahtverbindungen zuverlässig gegen widrige Umwelteinflüsse.In a preferred embodiment of the invention, all components of the sensor component are mounted on a support and provided with a mold housing, in particular with an OCFM (open-cavity-full-mold) housing. This packaging variant is cost-effective and reliably protects the sensor components as well as the evaluation circuit and any bonding wire connections against adverse environmental influences.

Kurze Beschreibung der ZeichnungenBrief description of the drawings

Wie bereits voranstehend erörtert, gibt es verschiedene Möglichkeiten, die Lehre der vorliegenden Erfindung in vorteilhafter Weise auszugestalten und weiterzubilden. Dazu wird einerseits auf die dem unabhängigen Patentanspruch 1 nachgeordneten Patentansprüche verwiesen und andererseits auf die nachfolgende Beschreibung mehrerer Ausführungsbeispiele der Erfindung anhand der Figuren.As already discussed above, there are various possibilities for embodying and developing the teaching of the present invention in an advantageous manner. For this purpose, reference is made, on the one hand, to the claims subordinate to independent claim 1 and, on the other hand, to the following description of several embodiments of the invention with reference to the figures.

1 zeigt eine schematische Schnittdarstellung eines ersten erfindungsgemäßen Sensorbauteils 100 mit nur einem Funktionschip, 1 shows a schematic sectional view of a first sensor component according to the invention 100 with only one functional chip,

2 zeigt eine schematische Schnittdarstellung eines zweiten erfindungsgemäßen Sensorbauteils 200 mit einem MEMS-Bauelement und einem ASIC-Bauelement, und 2 shows a schematic sectional view of a second sensor component according to the invention 200 with a MEMS device and an ASIC device, and

3 zeigt eine schematische Schnittdarstellung eines dritten erfindungsgemäßen Sensorbauteils 300 mit zwei Funktionschips. 3 shows a schematic sectional view of a third sensor component according to the invention 300 with two function chips.

Ausführungsformen der ErfindungEmbodiments of the invention

Das in 1 dargestellte Sensorbauteil 100 umfasst nur einen einzigen Funktionschip 10, auf dem sowohl die Sensorfunktionen eines Absolutdrucksensors 11, eines Temperatursensors 12 und eines Feuchtesensors 13 integriert sind, als auch eine Auswerteschaltung 14 für diese Sensorkomponenten 11, 12, 13.This in 1 illustrated sensor component 100 includes only a single functional chip 10 , on which both the sensor functions of an absolute pressure sensor 11 , a temperature sensor 12 and a humidity sensor 13 are integrated, as well as an evaluation circuit 14 for these sensor components 11 . 12 . 13 ,

Wesentlicher Bestandteil der Drucksensorkomponente 11 ist eine Membran 111 in der Chipoberfläche, die eine Kaverne 112 im Substrat des Funktionschips 10 überspannt. Diese mikromechanische Sensorstruktur wurde mit Verfahren der Oberflächenmikromechanik, wie z. B. in PorSi-Technik (APSMTM), erzeugt. Die Signalerfassung erfolgt beispielsweise mit Hilfe von Piezowiderständen, die im Randbereich der Membran 111 integriert sind, was hier allerdings nicht dargestellt ist.Essential part of the pressure sensor component 11 is a membrane 111 in the chip surface, which is a cavern 112 in the substrate of the functional chip 10 spans. This micromechanical sensor structure has been improved by surface micromachining techniques, such as surface micromachining. In PorSi technique (APSM ™ ). The signal detection takes place for example by means of piezoresistors, which are in the edge region of the membrane 111 are integrated, which is not shown here.

Neben der mikromechanischen Struktur der Drucksensorkomponente 11 wurde eine Auswerteschaltung 14 in CMOS-Technologie in die Chipoberfläche integriert. Dabei wurden auch Schaltungskomponenten 12 zur Temperaturmessung erzeugt, wie z. B. eine Bandgag-Schaltung oder eine Diodenschaltung, und Schaltungskomponenten 13 zur Feuchtemessung, nämlich beispielsweise ein Messkondensator mit einem feuchteempfindlichen Dielektrikum.In addition to the micromechanical structure of the pressure sensor component 11 became an evaluation circuit 14 integrated into the chip surface in CMOS technology. There were also circuit components 12 generated for temperature measurement, such. A bandgag circuit or a diode circuit, and circuit components 13 for moisture measurement, namely, for example, a measuring capacitor with a moisture-sensitive dielectric.

Der Funktionschip 10 ist einseitig auf einem Leadframe 15 montiert, so dass der sensitive Bereich mit der Sensorkomponenten 11, 12 und 13 über einer Öffnung 151 im Leadframe 15 positioniert ist. Auf diese Weise ist der sensitive Bereich des Funktionschips 10 sowohl mechanisch als auch thermisch weitestgehend vom Leadframe 15 entkoppelt. Die elektrische Kontaktierung des Funktionschips 10 erfolgt hier mit Hilfe von Bonddrähten 16 zwischen entsprechenden Anschlusspads 161 auf dem Funktionschip 10 und dem Leadframe 15. Funktionschip 10 und Leadframe 15 wurden in eine Moldmasse 17 eingebettet. Dabei wurde der sensitive Bereich des Funktionschips 10 ausgespart. Dementsprechend weist das Moldgehäuse 17 in diesem Bereich eine Medienzugangsöffnung 18 auf. Die externe elektrische Kontaktierung des Sensorbauteils 100 erfolgt über die aus der Moldmasse 17 herausragenden Abschnitte des Leadframes 15.The functional chip 10 is one-sided on a leadframe 15 mounted so that the sensitive area with the sensor components 11 . 12 and 13 above an opening 151 in the leadframe 15 is positioned. In this way, the sensitive area of the functional chip 10 both mechanically and thermally as far as possible from the leadframe 15 decoupled. The electrical contacting of the functional chip 10 takes place here with the help of bonding wires 16 between corresponding connection pads 161 on the functional chip 10 and the leadframe 15 , function chip 10 and lead frame 15 were in a molding compound 17 embedded. In this case, the sensitive area of the functional chip 10 spared. Accordingly, the mold housing 17 in this area a media access opening 18 on. The external electrical contact of the sensor component 100 takes place via the from the molding compound 17 outstanding sections of the leadframe 15 ,

Auch das in 2 dargestellte Sensorbauteil 200 ist mit einem OCFM(open-cavity-full-mold)-Gehäuse 27 ausgestattet. Im Unterschied zur 1-Chiplösung des Sensorbauteils 100 ist die Auswerteschaltung 14 hier allerdings auf einem eigenen ASIC-Bauelement 24 integriert, während die Drucksensorkomponente 11, die Temperatursensorkomponente 12 und die Feuchtesensorkomponente 13 auf einem MEMS-Bauelement 20 realisiert sind. Das ASIC-Bauelement 24 ist vollflächig auf dem Leadframe 25 des Gehäuses 27 montiert. Daneben ist das MEMS-Bauelement 20 so auf dem Leadframe 25 angeordnet, dass sich der sensitive Bereich mit den Sensorkomponenten 11, 12 und 13 über einer Öffnung 251 im Leadframe 25 befindet. Die elektrischen Verbindungen zwischen dem MEMS-Bauelement 20, dem ASIC-Bauelement 24 und dem Leadframe 25 werden durch Bonddrähte 26 gebildet, die zusammen mit den übrigen Komponenten des Sensorbauteils 200 in die Gehäusemoldmasse 27 eingebettet sind. Lediglich über dem sensitiven Bereich des MEMS-Bauelements 20 befindet sich eine Aussparung, die als Medienzugangsöffnung 28 fungiert.Also in 2 illustrated sensor component 200 is equipped with an OCFM (open-cavity-full-mold) enclosure 27 fitted. In contrast to the 1-chip solution of the sensor component 100 is the evaluation circuit 14 but here on its own ASIC device 24 integrated while the pressure sensor component 11 , the temperature sensor component 12 and the moisture sensor component 13 on a MEMS device 20 are realized. The ASIC device 24 is completely on the leadframe 25 of the housing 27 assembled. Next to it is the MEMS device 20 so on the leadframe 25 arranged that the sensitive area with the sensor components 11 . 12 and 13 over an opening 251 in the lead frame 25 located. The electrical connections between the MEMS device 20 , the ASIC device 24 and the leadframe 25 be through bond wires 26 formed along with the other components of the sensor component 200 in the housing gold mass 27 are embedded. Only above the sensitive area of the MEMS device 20 There is a recess that serves as a media access opening 28 acts.

Auch bei der in 3 dargestellten Bauteilvariante handelt es sich um eine 2-Chiplösung. Das Sensorbauteil 300 umfasst ebenfalls ein MEMS-Bauelement 30 und ein ASIC-Bauelement 34, die auf dem Leadframe 35 eines OCFM-Gehäuses 37 montiert sind und über Bonddrähte 36 elektrisch verbunden sind. Allerdings wurde die Feuchtesensorkomponente 13 hier zusammen mit der Auswerteschaltung 14 auf dem ASIC-Bauelement 34 integriert. Das MEMS-Bauelement 30 umfasst die Drucksensorkomponente 11 zusammen mit einer Temperatursensorkomponente 12. Dementsprechend sind im Gehäuse 37 des Sensorbauteils 300 zwei Medienzugangsöffnungen 381 und 382 ausgebildet, die eine 381 über dem sensitiven Bereich des MEMS-Bauelements 30 und die andere 382 über der Feuchtesensorkomponente 13 auf dem ASIC-Bauelement 34.Also at the in 3 shown component variant is a 2-chip solution. The sensor component 300 also includes a MEMS device 30 and an ASIC device 34 that are on the leadframe 35 an OCFM case 37 are mounted and over bonding wires 36 are electrically connected. However, the moisture sensor component became 13 here together with the evaluation circuit 14 on the ASIC device 34 integrated. The MEMS device 30 includes the pressure sensor component 11 together with a temperature sensor component 12 , Accordingly, in the housing 37 of the sensor component 300 two media access openings 381 and 382 trained, the one 381 over the sensitive area of the MEMS device 30 and the other one 382 above the humidity sensor component 13 on the ASIC device 34 ,

ZITATE ENTHALTEN IN DER BESCHREIBUNG QUOTES INCLUDE IN THE DESCRIPTION

Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Zitierte PatentliteraturCited patent literature

  • DE 102008011943 A1 [0002] DE 102008011943 A1 [0002]

Claims (8)

Sensorbauteil (100) mit einem Gehäuse (17), in dem zumindest ein MEMS-Bauelement (10) mit einer Drucksensorkomponente (11) und eine Auswerteschaltung (14) angeordnet sind, wobei das Gehäuse (17) mindestens eine Medienzugangsöffnung (18) für die Drucksensorkomponente (11) aufweist, dadurch gekennzeichnet, dass das Sensorbauteil (100) des Weiteren mindestens • eine Temperatursensorkomponente (12) und • eine Feuchtesensorkomponente (13) umfasst.Sensor component ( 100 ) with a housing ( 17 ), in which at least one MEMS component ( 10 ) with a pressure sensor component ( 11 ) and an evaluation circuit ( 14 ) are arranged, wherein the housing ( 17 ) at least one media access opening ( 18 ) for the pressure sensor component ( 11 ), characterized in that the sensor component ( 100 ) at least one temperature sensor component ( 12 ) and • a moisture sensor component ( 13 ). Sensorbauteil (100) nach Anspruch 1, wobei alle drei Sensorkomponenten (11, 12, 13) und die Auswerteschaltung (14) in einem einzigen Bauelement (10) integriert sind.Sensor component ( 100 ) according to claim 1, wherein all three sensor components ( 11 . 12 . 13 ) and the evaluation circuit ( 14 ) in a single component ( 10 ) are integrated. Sensorbauteil (200) nach Anspruch 1, wobei alle drei Sensorkomponenten (11, 12, 13) in einem MEMS-Bauelement (20) realisiert sind und die Auswerteschaltung (14) in einem ASIC-Bauelement (24) integriert ist.Sensor component ( 200 ) according to claim 1, wherein all three sensor components ( 11 . 12 . 13 ) in a MEMS device ( 20 ) and the evaluation circuit ( 14 ) in an ASIC device ( 24 ) is integrated. Sensorbauteil (300) nach Anspruch 1, wobei die Drucksensorkomponente (11) und die Temperatursensorkomponente (12) in einem MEMS-Bauelement (30) realisiert sind, während die Feuchtesensorkomponente (13) und die Auswerteschaltung (14) in einem ASIC-Bauelement (34) integriert sind.Sensor component ( 300 ) according to claim 1, wherein the pressure sensor component ( 11 ) and the temperature sensor component ( 12 ) in a MEMS device ( 30 ), while the humidity sensor component ( 13 ) and the evaluation circuit ( 14 ) in an ASIC device ( 34 ) are integrated. Sensorbauteil (100) nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass die Drucksensorkomponente (11) eine oberflächenmikromechanisch erzeugte Sensormembran (111) umfasst, insbesondere eine PorSi-Membran.Sensor component ( 100 ) according to one of claims 1 to 4, characterized in that the pressure sensor component ( 11 ) a surface micromechanically produced sensor membrane ( 111 ), in particular a PorSi membrane. Sensorbauteil (100) nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass die Temperatursensorkomponente (12) in Form einer Dioden- oder Bandgag-Schaltung realisiert ist.Sensor component ( 100 ) according to one of claims 1 to 5, characterized in that the temperature sensor component ( 12 ) is realized in the form of a diode or Bandgag circuit. Sensorbauteil (100) nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, dass die Feuchtesensorkomponente (13) in Form einer Kondensatoranordnung mit einem feuchtabhängigen Dielektrikum realisiert ist, insbesondere mit einem Polymer, dessen Dielektrizitätszahl feuchteabhängig ist.Sensor component ( 100 ) according to one of claims 1 to 6, characterized in that the moisture sensor component ( 13 ) is realized in the form of a capacitor arrangement with a moisture-dependent dielectric, in particular with a polymer whose dielectric constant is moisture-dependent. Sensorbauteil (100) nach einem der Ansprüche 1 bis 7, dadurch gekennzeichnet, dass das mindestens eine Bauelement (10) auf einem Träger (15) montiert ist und mit einem Moldgehäuse (17) versehen ist, insbesondere mit einem OCFM(open-cavity-full-mold)-Gehäuse.Sensor component ( 100 ) according to one of claims 1 to 7, characterized in that the at least one component ( 10 ) on a support ( 15 ) is mounted and with a mold housing ( 17 ), in particular with an OCFM (open-cavity-full-mold) housing.
DE102012215235A 2012-08-28 2012-08-28 Sensor component has micro-electro mechanical system (MEMS) component that is integrated with pressure sensor, temperature sensor, humidity sensor and evaluation circuit Ceased DE102012215235A1 (en)

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015106855A1 (en) * 2014-01-14 2015-07-23 Robert Bosch Gmbh Micromechanical pressure sensor apparatus and associated production method
DE102014106220A1 (en) * 2014-05-05 2015-11-05 Epcos Ag Sensor component with two sensor functions
CN105967138A (en) * 2015-03-12 2016-09-28 台湾积体电路制造股份有限公司 Monolithic mems platform for integrated pressure, temperature, and gas sensor
CN106185783A (en) * 2015-05-29 2016-12-07 意法半导体股份有限公司 The sensor cluster of encapsulation
DE102015218660A1 (en) 2015-09-29 2017-03-30 Robert Bosch Gmbh Combined micromechanical pressure and humidity sensor and manufacturing process
US10001396B2 (en) 2013-12-17 2018-06-19 Robert Bosch Gmbh Pressure-sensor apparatus, air-mass measuring apparatus, air-mass measuring system and pressure-measuring method
DE102018200064A1 (en) 2018-01-04 2019-07-04 Robert Bosch Gmbh Sensor device and method for producing a sensor device
DE102020211314A1 (en) 2020-09-09 2022-03-10 Robert Bosch Gesellschaft mit beschränkter Haftung Pressure sensor with humidity cross-sensitivity compensation and method for humidity cross-sensitivity compensation of pressure sensor values
DE102016101863B4 (en) 2015-02-03 2022-07-28 Infineon Technologies Ag Converter with temperature sensor
DE102016203228B4 (en) 2015-03-18 2022-10-27 Infineon Technologies Ag Transducer assembly comprising an acoustic transducer and an environmental transducer

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014218711A1 (en) * 2014-09-17 2016-03-17 Continental Teves Ag & Co. Ohg Moisture detection within a sensor
KR20160088111A (en) 2015-01-15 2016-07-25 삼성전기주식회사 Complex sensor, package having the same and manufacturing method thereof
CN117045206B (en) * 2023-10-11 2024-01-09 深圳汉威物联有限公司 Skin moisture flux density measuring device and measuring method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004038988B3 (en) * 2004-08-10 2006-01-19 Siemens Ag Gas mass flow measurement system for various applications has substrate with ceramic particles in organic matrix holding heating elements with temperature sensors
DE102005016002A1 (en) * 2005-04-07 2006-10-12 Robert Bosch Gmbh Sensor module, in particular for an air conditioning system
US7243541B1 (en) * 2006-03-30 2007-07-17 Honeywell International Inc. Combi-sensor for measuring multiple measurands in a common package
DE102007027127A1 (en) * 2006-06-13 2007-12-27 Denso Corp., Kariya Composite sensor for detecting tire`s e.g. air pressure, has membrane and pressure sensor substrate that contact silicon substrate, and reference pressure chamber arranged between substrate and membrane
DE102008011943A1 (en) 2008-02-29 2009-09-10 Robert Bosch Gmbh sensor arrangement
DE102010062802A1 (en) * 2010-12-10 2012-06-14 Robert Bosch Gmbh Sensor device for pressure measurement, has signal interface unit which outputs digital signals and receives input signals, and portion of analog components of signal interface unit is formed on sensor semiconductor component

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8426932B2 (en) * 2007-07-17 2013-04-23 Kwj Engineering Inc. Apparatus and method for microfabricated multi-dimensional sensors and sensing systems

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004038988B3 (en) * 2004-08-10 2006-01-19 Siemens Ag Gas mass flow measurement system for various applications has substrate with ceramic particles in organic matrix holding heating elements with temperature sensors
DE102005016002A1 (en) * 2005-04-07 2006-10-12 Robert Bosch Gmbh Sensor module, in particular for an air conditioning system
US7243541B1 (en) * 2006-03-30 2007-07-17 Honeywell International Inc. Combi-sensor for measuring multiple measurands in a common package
DE102007027127A1 (en) * 2006-06-13 2007-12-27 Denso Corp., Kariya Composite sensor for detecting tire`s e.g. air pressure, has membrane and pressure sensor substrate that contact silicon substrate, and reference pressure chamber arranged between substrate and membrane
DE102008011943A1 (en) 2008-02-29 2009-09-10 Robert Bosch Gmbh sensor arrangement
DE102010062802A1 (en) * 2010-12-10 2012-06-14 Robert Bosch Gmbh Sensor device for pressure measurement, has signal interface unit which outputs digital signals and receives input signals, and portion of analog components of signal interface unit is formed on sensor semiconductor component

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10001396B2 (en) 2013-12-17 2018-06-19 Robert Bosch Gmbh Pressure-sensor apparatus, air-mass measuring apparatus, air-mass measuring system and pressure-measuring method
EP3084368B1 (en) * 2013-12-17 2020-03-04 Robert Bosch GmbH Air mass flow measurement device and system
WO2015106855A1 (en) * 2014-01-14 2015-07-23 Robert Bosch Gmbh Micromechanical pressure sensor apparatus and associated production method
US9958348B2 (en) 2014-01-14 2018-05-01 Robert Bosch Gmbh Micromechanical pressure sensor device and corresponding manufacturing method
US10544035B2 (en) 2014-05-05 2020-01-28 Tdk Corporation Sensor component having two sensor functions
DE102014106220A1 (en) * 2014-05-05 2015-11-05 Epcos Ag Sensor component with two sensor functions
DE102014106220B4 (en) * 2014-05-05 2020-06-18 Tdk Corporation Sensor component with two sensor functions
DE102016101863B4 (en) 2015-02-03 2022-07-28 Infineon Technologies Ag Converter with temperature sensor
CN105967138A (en) * 2015-03-12 2016-09-28 台湾积体电路制造股份有限公司 Monolithic mems platform for integrated pressure, temperature, and gas sensor
CN105967138B (en) * 2015-03-12 2017-11-24 台湾积体电路制造股份有限公司 Monolithic microelectromechanical systems platform for integrated pressure, temperature and gas sensor
DE102016203228B4 (en) 2015-03-18 2022-10-27 Infineon Technologies Ag Transducer assembly comprising an acoustic transducer and an environmental transducer
DE102016016027B3 (en) 2015-03-18 2023-08-17 Infineon Technologies Ag System and method for an acoustic transducer and environmental sensor assembly
CN106185783A (en) * 2015-05-29 2016-12-07 意法半导体股份有限公司 The sensor cluster of encapsulation
DE102015218660A1 (en) 2015-09-29 2017-03-30 Robert Bosch Gmbh Combined micromechanical pressure and humidity sensor and manufacturing process
WO2019134839A1 (en) 2018-01-04 2019-07-11 Robert Bosch Gmbh Sensor device and method for producing a sensor device
DE102018200064A1 (en) 2018-01-04 2019-07-04 Robert Bosch Gmbh Sensor device and method for producing a sensor device
DE102020211314A1 (en) 2020-09-09 2022-03-10 Robert Bosch Gesellschaft mit beschränkter Haftung Pressure sensor with humidity cross-sensitivity compensation and method for humidity cross-sensitivity compensation of pressure sensor values

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