DE10156626A1 - Elektronische Anordnung - Google Patents
Elektronische AnordnungInfo
- Publication number
- DE10156626A1 DE10156626A1 DE10156626A DE10156626A DE10156626A1 DE 10156626 A1 DE10156626 A1 DE 10156626A1 DE 10156626 A DE10156626 A DE 10156626A DE 10156626 A DE10156626 A DE 10156626A DE 10156626 A1 DE10156626 A1 DE 10156626A1
- Authority
- DE
- Germany
- Prior art keywords
- carrier
- layer
- electronic arrangement
- signal
- chips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004020 conductor Substances 0.000 claims abstract 5
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000000969 carrier Substances 0.000 claims description 4
- 238000010276 construction Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 10
- 238000004049 embossing Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 238000004080 punching Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49572—Lead-frames or other flat leads consisting of thin flexible metallic tape with or without a film carrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
- H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4092—Integral conductive tabs, i.e. conductive parts partly detached from the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Credit Cards Or The Like (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
- Battery Mounting, Suspending (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10156626A DE10156626A1 (de) | 2001-11-17 | 2001-11-17 | Elektronische Anordnung |
JP2003548308A JP2005510877A (ja) | 2001-11-17 | 2002-10-15 | 電子装置 |
PCT/DE2002/003883 WO2003046988A2 (fr) | 2001-11-17 | 2002-10-15 | Dispositif electronique |
US10/495,233 US7138708B2 (en) | 1999-09-24 | 2002-10-15 | Electronic system for fixing power and signal semiconductor chips |
EP02779160A EP1449252A2 (fr) | 2001-11-17 | 2002-10-15 | Dispositif electronique |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10156626A DE10156626A1 (de) | 2001-11-17 | 2001-11-17 | Elektronische Anordnung |
Publications (1)
Publication Number | Publication Date |
---|---|
DE10156626A1 true DE10156626A1 (de) | 2003-06-05 |
Family
ID=7706161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10156626A Withdrawn DE10156626A1 (de) | 1999-09-24 | 2001-11-17 | Elektronische Anordnung |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1449252A2 (fr) |
JP (1) | JP2005510877A (fr) |
DE (1) | DE10156626A1 (fr) |
WO (1) | WO2003046988A2 (fr) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006003126A1 (fr) * | 2004-06-30 | 2006-01-12 | Robert Bosch Gmbh | Systeme de module electronique et procede de production correspondant |
US8018056B2 (en) | 2005-12-21 | 2011-09-13 | International Rectifier Corporation | Package for high power density devices |
US8823151B2 (en) | 2010-09-29 | 2014-09-02 | Mitsubishi Electric Corporation | Semiconductor device |
DE102022207848A1 (de) | 2022-07-29 | 2023-11-16 | Vitesco Technologies Germany Gmbh | Kontaktierungselement für Leistungshalbleitermodule, Leistungshalbleitermodul und Inverter mit einem Kontaktierungselement |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2444418B2 (de) * | 1974-09-17 | 1977-03-24 | Siemens AG, 1000 Berlin und 8000 München | Gehaeuse fuer ein halbleiterbauelement |
WO1998015005A1 (fr) * | 1996-09-30 | 1998-04-09 | Siemens Aktiengesellschaft | Composant microelectronique a structure sandwich |
WO2001024260A1 (fr) * | 1999-09-24 | 2001-04-05 | Virginia Tech Intellectual Properties, Inc. | Configuration tridimensionnelle peu couteuse de puces a bosses pour modules de puissance electroniques integres |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE7512573U (de) * | 1975-04-19 | 1975-09-04 | Semikron Gesellschaft Fuer Gleichri | Halbleitergleichrichteranordnung |
DE3201296C2 (de) * | 1982-01-18 | 1986-06-12 | Institut elektrodinamiki Akademii Nauk Ukrainskoj SSR, Kiev | Transistoranordnung |
GB2146174B (en) * | 1983-09-06 | 1987-04-23 | Gen Electric | Hermetic power chip packages |
US5006921A (en) * | 1988-03-31 | 1991-04-09 | Kabushiki Kaisha Toshiba | Power semiconductor switching apparatus with heat sinks |
US6125039A (en) * | 1996-07-31 | 2000-09-26 | Taiyo Yuden Co., Ltd. | Hybrid module |
-
2001
- 2001-11-17 DE DE10156626A patent/DE10156626A1/de not_active Withdrawn
-
2002
- 2002-10-15 WO PCT/DE2002/003883 patent/WO2003046988A2/fr active Application Filing
- 2002-10-15 JP JP2003548308A patent/JP2005510877A/ja active Pending
- 2002-10-15 EP EP02779160A patent/EP1449252A2/fr not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2444418B2 (de) * | 1974-09-17 | 1977-03-24 | Siemens AG, 1000 Berlin und 8000 München | Gehaeuse fuer ein halbleiterbauelement |
WO1998015005A1 (fr) * | 1996-09-30 | 1998-04-09 | Siemens Aktiengesellschaft | Composant microelectronique a structure sandwich |
WO2001024260A1 (fr) * | 1999-09-24 | 2001-04-05 | Virginia Tech Intellectual Properties, Inc. | Configuration tridimensionnelle peu couteuse de puces a bosses pour modules de puissance electroniques integres |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006003126A1 (fr) * | 2004-06-30 | 2006-01-12 | Robert Bosch Gmbh | Systeme de module electronique et procede de production correspondant |
US8018056B2 (en) | 2005-12-21 | 2011-09-13 | International Rectifier Corporation | Package for high power density devices |
DE102006060768B4 (de) * | 2005-12-21 | 2013-11-28 | International Rectifier Corp. | Gehäusebaugruppe, DBC-Plantine im Wafermaßstab und Vorrichtung mit einer Gehäusebaugruppe für Geräte mit hoher Leistungsdichte |
US8823151B2 (en) | 2010-09-29 | 2014-09-02 | Mitsubishi Electric Corporation | Semiconductor device |
DE102011082781B4 (de) * | 2010-09-29 | 2016-07-07 | Mitsubishi Electric Corp. | Halbleitervorrichtung mit einer plattenelektrode zum verbinden einer mehrzahl an halbleiterchips |
US10529656B2 (en) | 2010-09-29 | 2020-01-07 | Mitsubishi Electric Corporation | Semiconductor device |
DE102022207848A1 (de) | 2022-07-29 | 2023-11-16 | Vitesco Technologies Germany Gmbh | Kontaktierungselement für Leistungshalbleitermodule, Leistungshalbleitermodul und Inverter mit einem Kontaktierungselement |
Also Published As
Publication number | Publication date |
---|---|
WO2003046988A2 (fr) | 2003-06-05 |
EP1449252A2 (fr) | 2004-08-25 |
WO2003046988A3 (fr) | 2003-08-21 |
JP2005510877A (ja) | 2005-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0931346B1 (fr) | Composant microelectronique a structure sandwich | |
DE4318241C2 (de) | Metallbeschichtetes Substrat mit verbesserter Widerstandsfähigkeit gegen Temperaturwechselbeanspruchung | |
DE2459532C2 (de) | Anordnung mit mehreren, parallel angeordneten mikroelektronischen Bauelementen scheibenförmiger Gestalt und Verfahren zur Herstellung der Kontaktbereiche einer solchen Anordnung | |
DE102007017831B4 (de) | Halbleitermodul und ein Verfahren zur Herstellung eines Halbleitermoduls | |
DE69937781T2 (de) | Leistungselektronikvorrichtung | |
WO1998015005A9 (fr) | Composant microelectronique a structure sandwich | |
DE1933547B2 (de) | Traeger fuer halbleiterbauelemente | |
DE3716196A1 (de) | Anordnung aus einem elektronische bauelemente tragenden keramiksubstrat und einer waermeabfuehreinrichtung | |
DE19509441C2 (de) | Integrierte Hybrid-Leistungsschaltungsvorrichtung | |
EP1008231A2 (fr) | Module de puissance comportant un circuit pourvu de composants a semiconducteur actifs et de composants passifs, et son procede de production | |
EP1508168B1 (fr) | Composant semi-conducteur et procédé de fabrication d'un ensemble de composants semi-conducteurs comprenant ledit composant semi-conducteur | |
EP1192841A1 (fr) | Module de puissance intelligent | |
DE68926258T2 (de) | Verfahren zum Herstellen eines uniaxial elektrisch leitenden Artikels | |
DE3930858C2 (de) | Modulaufbau | |
DE69728648T2 (de) | Halbleitervorrichtung mit hochfrequenz-bipolar-transistor auf einem isolierenden substrat | |
DE102004058806B4 (de) | Verfahren zur Herstellung von Schaltungsstrukturen auf einem Kühlkörper und Schaltungsstruktur auf einem Kühlkörper | |
EP0938252A2 (fr) | Agencement de circuit électrique | |
DE10156626A1 (de) | Elektronische Anordnung | |
DE10217214B4 (de) | Kühlanordnung für eine Schaltungsanordnung | |
DE10219353B4 (de) | Halbleiterbauelement mit zwei Halbleiterchips | |
DE4129835A1 (de) | Leistungselektroniksubstrat und verfahren zu dessen herstellung | |
DE102019113021A1 (de) | Elektronikkomponente für ein Fahrzeug mit verbesserter elektrischer Kontaktierung eines Halbleiterbauelements sowie Herstellungsverfahren | |
DE102006028719B4 (de) | Halbleiterbauteil mit Halbleiterchipstapel und Verbindungselementen sowie Verfahren zur Herstellung des Halbleiterbauteils | |
DE10334634B3 (de) | Verfahren zum seitlichen Kontaktieren eines Halbleiterchips | |
WO2003071601A2 (fr) | Module de circuit et procede de fabrication |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8139 | Disposal/non-payment of the annual fee |