CN2678141Y - Silicon based quantum point infrared probe - Google Patents
Silicon based quantum point infrared probe Download PDFInfo
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- CN2678141Y CN2678141Y CN 200320100175 CN200320100175U CN2678141Y CN 2678141 Y CN2678141 Y CN 2678141Y CN 200320100175 CN200320100175 CN 200320100175 CN 200320100175 U CN200320100175 U CN 200320100175U CN 2678141 Y CN2678141 Y CN 2678141Y
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- Prior art keywords
- quantum point
- detector
- quantum dot
- contact layer
- infrared detector
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 11
- 239000010703 silicon Substances 0.000 title claims abstract description 11
- 239000000523 sample Substances 0.000 title 1
- 239000002096 quantum dot Substances 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- 239000002800 charge carrier Substances 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract description 3
- 230000005284 excitation Effects 0.000 abstract description 2
- 230000002040 relaxant effect Effects 0.000 abstract description 2
- 230000004913 activation Effects 0.000 abstract 1
- 230000016507 interphase Effects 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
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Abstract
The utility model discloses a silicon based ge quantum point infrared detector which belongs to the range of nanometer semiconductor electron device. A silicon bulk piece is accreted with a lower electrode contact layer and a lower electrode from the bottom to the top, and a ge quantum point and a si isolation layer of 8-12 layers are also accreted on the silicon bulk piece in the interphase mode. The surface of the silicon bulk piece is accreted with a layer of an upper electrode contact layer and an upper electrode, and the upper electrode is carved a light emission window, thus a silicon based ge quantum point infrared detector is formed. Compared with a quantum well detector, the quantum point infrared detector has obvious advantage: a phonon scattering is cut down in the quantum point, and a light activation charge carrier forms a light current before relaxing to the basic state, which enhances the detection efficiency; the prolonged service life of the charge carrier in the quantum point excitation state is also good for improving the performance of the detector; the silicon based ge quantum point infrared detector adopts appropriate doping density, thus the drain current denseness of the quantum point detector is relatively low because of the peaking of the density of states.
Description
Technical field
The utility model belongs to Nano semiconductor electronic device scope, particularly a kind of si-based quantum dot Infrared Detectors.
Background technology
Along with further reducing of processing dimension, we will enter a brand-new nano electron device period.Change the second time of our development of electronic devices that faces that Here it is.Aspect optical communication, wavelength is near the research of the photoelectric detector of the low-dimensional quantum structure the silica fiber minimal absorption window, just become a very popular topic.S.D.Gunapala waits the people to report in " Appl.Phys.Lett.64 (1994) 3431 andreferences therein " document: to have the photodetector of responsiveness up to several A/W at present.But the achievement in research of the overwhelming majority all concentrates on direct gap semiconductor quantum well, the quantum dot light electric explorer such as InAs/InGaAs, and less for the research of the optical characteristics of the such indirect gap semiconductor quantum well of Ge/Si, quantum dot.The silica-based large scale integrated circuit specification requirement of maturation make the material of photodetector can compatible with it this point on, silica-based Ge/Si low-dimensional materials have the advantage that can not be substituted undoubtedly.In the quantum well, it is very faint that electric dipole transition aligns absorption of incident light, thereby limited the application of quantum-well materials in the infrared detector of reality.
Summary of the invention
The purpose of this utility model provides a kind of si-based quantum dot Infrared Detectors.It is characterized in that: the structure of described Infrared Detectors be on silicon substrate 1 for bottom electrode contact layer 2, partly be table top 3 on bottom electrode contact layer 2 both sides than low degree, the Al film is set on table top 3 does bottom electrode 4; Be the separator 6 of Si on the high plane of bottom electrode contact layer 2, Ge quantum dot 5 distributes wherein, and the Si separator that is distributed with Ge quantum dot 5 has that 8-12 is stacked to be added together; Be top electrode contact layer 7 above the layer at this then, as top electrode 8, the middle part is an optical transmission window 9 to this layer periphery with the Al film, promptly makes a silica-based Ge quantum dot infrared detector.During detector work, give on top electrode 8, the bottom electrode 4 and add bias voltage V, light is from 9 incidents of top optical transmission window.Utilize Ge quantum dot layer 5 as infrared absorption layer, photon produces interband or intraband transition has produced new electron hole pair owing to electronics (hole) absorbs, and these charge carriers just form electric current under added External Electrical Field, thereby are surveyed by external circuit.
Described quantum dot also can be made of the germanium silicon compound except that of the Ge material.
The beneficial effects of the utility model are that quantum dot infrared detector is compared with quantum well detector tangible advantage is arranged: quantum trap infrared detector is because the restriction of selection rule, and it is insensitive to align incident illumination; The existence of local attitude in the quantum dot makes that intraband transition can be by normal incident light according to bringing out; The minimizing of phon scattering in the quantum dot, light swash charge carrier and form photoelectric current before relaxing towards ground state, have improved detection efficient; The prolongation of carrier lifetime also helps improving detector performance in the quantum dot excitation state; Select suitable doping content, because the peaking of its density of states, the leakage current density of quantum dot detector is low relatively.
Description of drawings
Fig. 1 is silica-based Ge quantum dot infrared detector structure schematic diagram.
Embodiment:
In silica-based Ge quantum dot infrared detector structure schematic diagram shown in Figure 1, on silicon substrate 1 bottom electrode contact layer 2, partly be table top 3 on bottom electrode contact layer 2 both sides than low degree, the Al film is set on table top 3 does bottom electrode 4; Be the separator 6 of Si on the high plane of bottom electrode contact layer 2, Ge quantum dot 5 distributes wherein, and the Si separator that is distributed with Ge quantum dot 5 has that 8-12 is stacked to be added together; Be top electrode contact layer 7 above the layer at this then, as top electrode 8, the middle part is an optical transmission window 9 to this layer periphery with the Al film, promptly makes a silica-based Ge quantum dot infrared detector.The GSE-400 of high vacuum chemical vapor deposition system (UHV/CVD) preparation that the growth of this structure has adopted Institute of Microelectronics of Tsinghua Univertity to develop voluntarily, other same category of device also can be used certainly.Temperature is controlled at 550 ℃, and growth is with SiH
4GeH
4, BH
3, PH
5Deng growing for source of the gas.As shown in Figure 1, go up the P type heavy doping Si (10 of growth 200nm earlier at p type (100) Si (p～0.1 Ω cm) substrate 1 (silicon chip of highly doped SOI)
18Cm
-3) as bottom electrode contact layer 2, then grow 10 layers periodically repeat Ge quantum dot 5 and cover the separator 6 of the intrinsic Si of 40nm in the above.The last n type heavy doping Si (10 of long again one deck 100nm in the above
18Cm
-3) as the contact layer 7 of top electrode.Such P-i-N structure both can utilize quantum dot to do absorbed layer, to the normal incident light sensitivity, can utilize the little advantage of pn knot dark current again, thereby improve detection efficient.And as the reflector, improved the incident efficient of light greatly with SOI.During detector work, give on top electrode 8, the bottom electrode 4 and add bias voltage V, light is from 9 incidents of top optical transmission window.Utilize Ge or make quantum dot layer 5 as infrared absorption layer with the germanium silicon compound, photon produces interband or intraband transition has produced new electron hole pair owing to electronics (hole) absorbs, these charge carriers just form electric current under added External Electrical Field, thereby are surveyed by external circuit.
Claims (2)
1. si-based quantum dot Infrared Detectors, it is characterized in that: the structure of described Infrared Detectors is to go up at silicon substrate (1) to be bottom electrode contact layer (2), partly is table top (3) on bottom electrode contact layer (2) both sides than low degree, the Al film is set on table top (3) does bottom electrode (4); Be the separator (6) of Si on the high plane of bottom electrode contact layer (2), Ge quantum dot (5) distributes wherein, and the Si separator that is distributed with Ge quantum dot (5) has that 8-12 is stacked to be added together; Be top electrode contact layer (7) above the layer at this then, as top electrode (8), the middle part is optical transmission window (9) to this layer periphery with the Al film, promptly makes a silica-based Ge quantum dot infrared detector.
2. according to the described si-based quantum dot Infrared Detectors of claim 1, it is characterized in that: described quantum dot also can be made of the germanium silicon compound except that of the Ge material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200320100175 CN2678141Y (en) | 2003-10-10 | 2003-10-10 | Silicon based quantum point infrared probe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200320100175 CN2678141Y (en) | 2003-10-10 | 2003-10-10 | Silicon based quantum point infrared probe |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2678141Y true CN2678141Y (en) | 2005-02-09 |
Family
ID=34580586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200320100175 Expired - Fee Related CN2678141Y (en) | 2003-10-10 | 2003-10-10 | Silicon based quantum point infrared probe |
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| Country | Link |
|---|---|
| CN (1) | CN2678141Y (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101571886B (en) * | 2009-06-12 | 2011-05-11 | 哈尔滨工业大学 | Simulation design method for material structure of quantum well infrared photodetector |
| CN102427093A (en) * | 2011-12-08 | 2012-04-25 | 福州大学 | Transverse PIN structure Ge quantum dot near-infrared detector and manufacturing method thereof |
| CN103441186A (en) * | 2013-08-29 | 2013-12-11 | 江苏大学 | Ultraviolet detector manufacturing method |
| CN103633183A (en) * | 2013-11-18 | 2014-03-12 | 西安电子科技大学 | Graphene medium-far infrared detector and preparing method thereof |
| CN103840028A (en) * | 2013-11-22 | 2014-06-04 | 山西大同大学 | Method for characterizing responsivity of quantum dot infrared detector |
| CN104900731A (en) * | 2015-06-03 | 2015-09-09 | 中国科学院半导体研究所 | Infrared photoelectric detector and manufacturing method thereof |
| CN105556261A (en) * | 2014-03-27 | 2016-05-04 | 松下知识产权经营株式会社 | Infrared ray detection element and infrared ray detection device equipped therewith |
| CN106847952A (en) * | 2016-12-14 | 2017-06-13 | 中国科学院上海微系统与信息技术研究所 | Infrared double-color detector during a kind of Si bases three-dimensional Ge quantum dot crystal photovoltaics type is near |
| CN106847988A (en) * | 2017-01-25 | 2017-06-13 | 东南大学 | Large area infrared detector and its driving method based on FPD TFT substrate |
| CN106946212A (en) * | 2017-05-08 | 2017-07-14 | 河南理工大学 | A kind of surface quantum point humidity sensor chip |
| CN110783418A (en) * | 2019-11-20 | 2020-02-11 | 京东方科技集团股份有限公司 | Photoelectric sensor and preparation method thereof |
-
2003
- 2003-10-10 CN CN 200320100175 patent/CN2678141Y/en not_active Expired - Fee Related
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101571886B (en) * | 2009-06-12 | 2011-05-11 | 哈尔滨工业大学 | Simulation design method for material structure of quantum well infrared photodetector |
| CN102427093A (en) * | 2011-12-08 | 2012-04-25 | 福州大学 | Transverse PIN structure Ge quantum dot near-infrared detector and manufacturing method thereof |
| CN103441186B (en) * | 2013-08-29 | 2016-04-06 | 江苏大学 | A kind of preparation method of ultraviolet detector |
| CN103441186A (en) * | 2013-08-29 | 2013-12-11 | 江苏大学 | Ultraviolet detector manufacturing method |
| CN103633183A (en) * | 2013-11-18 | 2014-03-12 | 西安电子科技大学 | Graphene medium-far infrared detector and preparing method thereof |
| CN103840028A (en) * | 2013-11-22 | 2014-06-04 | 山西大同大学 | Method for characterizing responsivity of quantum dot infrared detector |
| CN105556261A (en) * | 2014-03-27 | 2016-05-04 | 松下知识产权经营株式会社 | Infrared ray detection element and infrared ray detection device equipped therewith |
| CN105556261B (en) * | 2014-03-27 | 2018-08-24 | 松下知识产权经营株式会社 | Infrared-ray detecting element and the infra-red ray detection device for having it |
| CN104900731A (en) * | 2015-06-03 | 2015-09-09 | 中国科学院半导体研究所 | Infrared photoelectric detector and manufacturing method thereof |
| CN104900731B (en) * | 2015-06-03 | 2017-06-20 | 中国科学院半导体研究所 | Infrared photoelectric detector and its manufacture method |
| CN106847952A (en) * | 2016-12-14 | 2017-06-13 | 中国科学院上海微系统与信息技术研究所 | Infrared double-color detector during a kind of Si bases three-dimensional Ge quantum dot crystal photovoltaics type is near |
| CN106847988A (en) * | 2017-01-25 | 2017-06-13 | 东南大学 | Large area infrared detector and its driving method based on FPD TFT substrate |
| CN106946212A (en) * | 2017-05-08 | 2017-07-14 | 河南理工大学 | A kind of surface quantum point humidity sensor chip |
| CN110783418A (en) * | 2019-11-20 | 2020-02-11 | 京东方科技集团股份有限公司 | Photoelectric sensor and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050209 Termination date: 20091110 |