CN106847988A - Large area infrared detector and its driving method based on FPD TFT substrate - Google Patents
Large area infrared detector and its driving method based on FPD TFT substrate Download PDFInfo
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- CN106847988A CN106847988A CN201710055452.3A CN201710055452A CN106847988A CN 106847988 A CN106847988 A CN 106847988A CN 201710055452 A CN201710055452 A CN 201710055452A CN 106847988 A CN106847988 A CN 106847988A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a kind of large area infrared detector and its driving method based on FPD TFT substrate, using thin film transistor base plate, and PbS or Ge semiconductor-quantum-points are prepared using chemical solution method, as photoelectric conversion material；Secondly, side, using methods such as low temperature spin coating, inkjet printing or transfers, deposits PbS the or Ge quantum dot layers that can sense infrared signal on the tft substrate；On quantum dot optoelectronic conversion layer the common conductive layer less to INFRARED ABSORPTION is prepared using sputtering method；The pixel source electrode of thin film transistor backplane, quantum dot optoelectronic conversion layer, and transparency electrode constitute infrared photoresistor structure, after the photo resistance absorbs infrared signal, photo-generated carrier are produced, so as to change the resistance of resistance.Infrared detector imaging area proposed by the present invention is big, and with low cost, can be used for industry detection, safety inspection and medical examination etc..
Description
Technical field
The invention belongs to infrared detection technique field, and in particular to a kind of large area based on FPD TFT substrate is red
External detector part and its driving method.
Background technology
Infrared detection technique is that the infrared signal that detecting object is radiated is converted into electricity using infrared electro switching device
Stream or voltage signal, and the sequence of operations such as electric signal is amplified and is exported by reading circuit, so as to obtain detection
The Infrared Image Information of object and background.Infrared detection technique is widely used in military and national defense, Industry Control, criminal investigation, doctor
Treat the every field that health, resource exploration etc. are related to national economy.
Highly sensitive Infrared Detectors is occurred in that from nineteen forties so far, infrared photoelectric detector substantially may be used
It is divided into three generations：The first generation uses unit or small-scale detector array, and it obtains infrared figure using two-dimentional machinery scanning system
Picture.Refrigeration mode detector is connected after lead passes through cryogenic system with preamplifier at room temperature, not integrated inside it
Reading circuit.
Second generation Infrared Detectors be characterized in large-scale detector array and silicon technology read integrated circuit (ROIC,
Readout Integrated Circuit) focal plane arrays (FPA) (FPA, Focal Plane is formed by the way of mechanical connection
Array).Whole Infrared Detectors can be divided into two parts of Infrared Detection Array and reading circuit.The master of Infrared Detection Array
It is to become in the corresponding array of electrical signals in space radiated infrared picture signal to want function, and reading circuit then will be acquired
Space electric signal array export in a certain order.Third generation Infrared Detectors is the knot that second generation detector further develops
Really, its main representative type device is extensive, ultra-large high performance staring detector.
Infrared Detectors can be classified as one chip and hybrid-type again according to the different of structure.One chip Infrared Detection Array
Made on the same substrate with reading circuit, in general substrate is needed using the specifically infrared spy with suitable spectral effects
Measure and monitor the growth of standing timber material.The detection array and reading circuit of hybrid-type Infrared Detectors are produced on different substrates, then by indium
Post inverse bonding is interconnected.The detection array and reading circuit of hybrid-type Infrared Detectors can respectively from the most suitable material of itself and
Technique makes, and can respectively carry out test screen, determines its optimal performance, and picking out best chip, to carry out inverse bonding mutual
Connection, it is possible to the performance that whole device is effectively ensured is in ideal state.This hybrid-type is generally used at this stage
Structure,
In Infrared Detectors, detection array is mostly using ternary semiconductor compounds such as HgCdTe, InGaAs light
Electric transition material, to improve photoelectric transformation efficiency and obtain preferable wavelength response characteristic.Reading circuit is Infrared Detectors
Important component, it is typically with the integrated circuit of standard CMOS silicon technology making, and its basic function is to infrared acquisition
Spatial distribution current signal or voltage signal produced by array are exported according to a certain order, and digitized processing on piece
Deng.
In existing infrared detector, the integrated circuit of CMOS silicon technique, institute are all based on greatly due to reading circuit
It is very limited, it is necessary to certain optical system is focused imaging to detection image with the area of its detection array, it is impossible to realize
Direct large-area flat-plate detection imaging.In addition, the either reading circuit of silicon substrate, or ternary semiconductor detection array, all need
Will be using techniques such as diffusion, the doping of high temperature, so cannot be prepared on the substrates such as glass, plastics, polymer.Therefore it is existing
Infrared detector structure and preparation method etc., cannot all meet requirement of the people to flexible device and wearable device.
The content of the invention
Goal of the invention：In order to overcome the deficiencies in the prior art, the present invention to provide a kind of based on FPD TFT bases
The Infrared Detectors and its driving method of plate.It is similar to infrared array detector, flat-panel display device, such as TFT-LCD and TFT-
OLED etc., it is also desirable to which a drive circuit for array type provides required voltage or current signal to each display pixel.
Difference is that, in order to realize large-area displays, the array drive circuit of FPD is not based on the silicon substrate collection of CMOS technology
Into circuit, but the amorphous silicon film transistor circuit or polysilicon for being prepared using low temperature thin film techniques on the glass substrate
Thin-film transistor circuit or oxide thin film transistor circuit.The present invention proposes the TFT substrate using flat-panel monitor to every
One source metal of pixel provides certain bias, then infrared electro conversion layer is prepared in source metal, in photoelectricity
Cathode electrode is prepared on conversion layer, so as to constitute photoelectronic detecting array, and from negative electrode export the detection of each pixel photoelectric current or
Person's photovoltage.
Because the TFT substrate of flat-panel monitor all uses glass substrate, so photoelectricity must be prepared normal temperature on the tft substrate
Conversion layer.The present invention proposes to prepare PbS or Ge quantum dots using chemical solution method first, is then beaten using spin coating, ink-jet again
The method such as print or transfer deposits quantum dot on the tft substrate, and by it as photoelectric conversion layer.
Due to using ripe flat-panel monitor TFT substrate, infrared sensor proposed by the present invention have detection area it is big,
It is with low cost, the characteristics of the flexible substrates such as plastics can be expanded to.
Technical scheme：To achieve the above object, the technical solution adopted by the present invention is：
A kind of large area infrared detector based on FPD TFT substrate, using TFT substrate, its structure is：With glass
Glass substrate is substrate, above sets gate electrode, and drain electrode and source class electrode；
The top of the gate electrode and outer side covers have insulating medium layer, the drain electrode and source class electrode difference position
It is connected in the insulating medium layer both sides and with its top and both sides, semiconductor is provided between the drain electrode and source class electrode
Raceway groove；
The source electrode is provided with quantum dot optoelectronic conversion layer, and the quantum dot optoelectronic conversion layer top is provided with common electrical
Pole.
Further, the infrared electro transition material used by the quantum dot optoelectronic conversion layer is PbS or Ge semiconductors
Quantum dot.
Further, the PbS semiconductor-quantum-points are prepared using chemical solution method, specific as follows：
A) it is 2 by mole mass ratio:Lead oxide (PbO) powder is scattered in oleic acid (OA) organic solution by 5, by the dispersion liquid
It is dissolved in mixed solution of octadecylamine (ODA) solution allocation as 14.5wt%；The mixed solution is placed in three neck round bottom,
Vacuumize；Next is passed through nitrogen, nitrogen protective atmosphere is formed in flask and is enclosed, and is under nitrogen protection sufficiently stirred for simultaneously mixed solution
180 DEG C are heated to, until PbO is completely dissolved in solution；
B) the solution natural cooling for obtaining above-mentioned reaction, will be 0.02 with liquid volume ratio when temperature is down to 140 DEG C
Hexamethyldisilathiane (TMS) and 0.13 n-octadecane (ODE) mixed solution be injected into the reaction liquid that step a) is obtained
In and be sufficiently stirred for；
C) the solution injection liquid volume obtained to step b) is well mixed than the hexane solution for 0.4, and will mixing
Complete solution is transferred in the bain-marie of ambient temperature, and fluid temperature is reduced into room temperature, obtains PbS quantum solution；
D) the PbS quantum solution carries out eccentric cleaning using cleaning solution, a layer solution is removed, after being cleaned
PbS quantum solution；The cleaning solution respectively is mixed solution, methanol solution and the acetone of isopropanol and acetone soln
Solution mixes；
E) finally the PbS quantum solution that step d) is obtained is positioned in vacuum cavity, is dried about under the conditions of 60 DEG C
10 hours, obtain PbS quantum powder.
Further, the cleaning method of the step d), specially：
First wash：Isopropanol and acetone soln first is according to volume ratio 1:2 mixing, form cleaning solution, by step c)
The PbS quantum solution injection cleaning solution for obtaining, 7000 revs/min of centrifuge is centrifuged 5 minutes, and the centrifugation being layered is molten
Liquid；The upper solution of the centrifugation solution being layered is outwelled, cleaning solution is rejoined, repeated centrifugation cleaning process 3~4 times takes
Lower floor's solution after last time centrifugation, that is, obtain by the PbS quantum solution of first wash；
Secondary cleaning：By methanol solution and acetone soln according to volume ratio 1:2 mixing, form cleaning solution, will be by just
The PbS quantum solution of secondary cleaning injects the cleaning solution, and according to the eccentric cleaning method of first wash, then clean 3 to 4
It is secondary, obtain the PbS quantum solution by cleaning twice.
Because there are residual solvents impurity, and these impurity by the PbS quantum solution that step (a), (b), (c) are obtained
Insoluble in methyl alcohol, therefore the removal of impurity is gone using cleaning twice.
Further, the Ge semiconductor-quantum-points are prepared using chemical solution method, specific as follows：
A) by GeO2Powder is dissolved in NaOH alkali lye, obtains Ge acid ion precursor liquids, and the pH value of precursor liquid is adjusted into 6
~8, during natural biological macromolecular shitosan dissolved in into the solution, the mixing speed using 100~300rpm of magnetic stirrer mixes
Uniformly, insoluble matter is filtered out, well dispersed reaction liquid is obtained；
B) according to NaBH4With GeO2Mol ratio 4：1 ratio is by NaBH4In adding the reaction liquid；Mixing liquid is in nitrogen
2~4h is stirred with 800~1000rpm speed in gas shielded, rufous sample solution is obtained；
C) the rufous sample solution is dialysed 24h, centrifugation freeze-drying obtains powder, and by powder be dissolved in toluene it
Middle formation yellow solution, obtains Ge nano particle dilutions；
D) the Ge nano particles dilution is placed in polytetrafluoroethylene beaker, and carries out sonic oscillation；Using micro
With 10s once, the speed of 2 μ L volumes will be hydrogenated and instilled to Ge nano particle dilutions with oxidizing agent solution liquid inlet device every time, be produced
Raw hydrogenation and oxidation reaction；
E) reaction solution that step d) is obtained PVDF (Polyvinylidenefluoride) filter paper mistake in 100nm apertures
Filter, collects quanta point material, and quantum dot is dissolved among toluene after drying, obtains Ge quantum dot solutions.
Further, the hydrogenation in the step d) is with oxidizing agent solution：It is 69wt% nitric acid to use mass fraction
(HNO3) with 46wt% hydrofluoric acid (HF) with volume ratio 1:4 mix.
Further, the reaction time of the step d) is 10~40 minutes, thus controls the size of quantum dot；
Among the course of reaction, the surface of Ge quantum dots will first be oxidized by nitric acid as chromium oxide and be Ge by hydrofluoric acid hydrogenationxOyHz
Shell structurre, and prevent Ge materials from continuing to be oxidized.
Further, the preparation method of the quantum dot optoelectronic conversion layer is：Above the source electrode under normal temperature
Deposition can sense PbS the or Ge quantum dot optoelectronic conversion layers of infrared signal, using including low temperature spin coating, inkjet printing or turning
The method of print.
Further, the preparation method of the public electrode is：Using including splashing on the quantum dot optoelectronic conversion layer
Penetrate and prepare thoroughly infrared conductive electrode, including transparent conductive indium-tin oxide layer, as common electrical in interior membrane deposition method
Pole.
The driving method of the above-mentioned large area infrared detector based on FPD TFT substrate, comprises the following steps：
1) apply row selects signal on gate electrode, column selection signal is applied on drain electrode, realize that sensing unit is addressed；
2) the opto-electronic conversion electric current of each probe unit is chronologically exported on public electrode, and is carried out by amplifier defeated
Go out signal amplification, so as to complete the detection of infrared image.
Beneficial effect：A kind of Infrared Detectors and its driving method based on FPD TFT substrate that the present invention is provided,
Compared with prior art, have the advantage that：
1. the present invention uses the TFT substrate circuit of flat-panel display device as the reading circuit of detection array, preparation technology
It is highly developed, and avoid the complicated work such as weldering of falling indium in the prior art between silicon substrate reading circuit and infrared focal plane array
Skill, reduces preparation cost.
2. the Infrared Detectors based on FPD TFT substrate of the present invention, due to using thin-film technique in glass
TFT is prepared on substrate to drive and reading circuit, so TFT substrate size can increase to more than 50 inches, it is possible thereby to obtain
Identical infrared image detection area.And in existing infrared detection technique, due to being processing technology by infrared focus plane
And the limitation of readout circuit technique, its image detection area is generally below 2 inches, it is therefore desirable to extra optical system
System is to infrared image focal imaging.
3. the Infrared Detectors based on FPD TFT substrate of the present invention, its TFT substrate uses low temperature thin film work
Prepared by skill, photoelectric conversion layer is then deposited at normal temperatures using methods such as spin coating, inkjet printing or transfers, and common electrode is by splashing
Penetrate preparation.Therefore, panel detector structure proposed by the present invention and preparation method, go for the flexible substrates such as plastics, polymer,
Flexible infrared detector is prepared, the need for meeting Wearable.
Brief description of the drawings
Fig. 1 is the Infrared Detectors sectional view based on FPD TFT substrate of the invention；
Wherein have：Glass substrate 1, gate electrode 2, insulating medium layer 3, semiconductor channel 4, drain electrode 5, source electrode
6th, quantum dot optoelectronic conversion layer 7, public electrode 8；
Fig. 2 is the top plan view of Fig. 1；
Fig. 3 is the ranks addressing and drive of the detection array of the Infrared Detectors based on FPD TFT substrate of the invention
Dynamic signal；
Fig. 4 is the circuit structure of the single detected pixel of the Infrared Detectors based on FPD TFT substrate of the invention.
Specific embodiment
The present invention is further described below in conjunction with the accompanying drawings.
The present invention is a kind of large area infrared detector based on FPD thin film transistor (TFT) (TFT) substrate, including
Device architecture, preparation method and driving method.Because the TFT substrate technology maturation of flat-panel monitor, proposed by the present invention
Infrared detector imaging area is big, and with low cost, can be used for industry detection, safety inspection and medical examination etc..This is red
The inventive point of external detector includes：1.TFT substrates.In order to simplify device architecture, cost of manufacture is reduced, the present invention is used and TFT-
LCD identical thin film transistor base plates.2. using chemical solution method preparation PbS or Ge semiconductor-quantum-points, and as
, using methods such as low temperature spin coating, inkjet printing or transfers above thin film transistor base plate, deposition can for photoelectric conversion material 3.
Sense PbS the or Ge quantum dot layers of infrared signal.4. prepared to infrared using sputtering method on quantum dot optoelectronic conversion layer
Absorb less common conductive layer, such as transparent conductive indium-tin oxide layer；5. pixel source electrode, the quantum of thin film transistor backplane
Point photoelectric conversion layer, and transparency electrode constitutes infrared photoresistor structure.After the photo resistance absorbs infrared signal, light is produced
Raw carrier, so as to change the resistance of resistance.Due to using thin film transistor base plate, quantum dot layer is with transparent common electrode layer all
Need not pattern.
It is as shown in Figure 1 a kind of Infrared Detectors based on FPD TFT substrate, the detector typical structure includes：
Glass substrate is that glass substrate 1 is provided with gate electrode 2, and gate electrode 2 is provided with insulating medium layer 3, is set on insulating medium layer 3
There are drain electrode 5 and source electrode 6, the material of semiconductor channel 4 is provided between drain electrode 5 and source electrode 6, use is provided with source electrode 6
In the quantum dot layer 7 (such as PbS or Ge quantum dots) of infrared electro conversion, quantum dot layer 7 is provided with public electrode 8.Due to flat
Panel display TFT technology is ripe, and can prepare large-size substrate, thus the present invention can realize the infrared image of large area into
Picture, it is not necessary to extra optical imaging system.In addition, TFT circuit and quantum dot optoelectronic conversion layer all can be at a lower temperature
Prepared by technique, so the panel detector structure and preparation method of present invention offer are adapted to prepare sensing in the flexible substrates such as plastics
Device.
Embodiment
It is a kind of large area infrared detector based on FPD TFT substrate proposed by the present invention, the biography with reference to Fig. 1
Sensor includes：Glass substrate 1 is provided with gate electrode 2, and gate electrode is provided with insulating medium layer 3, and insulating medium layer is provided with
Drain electrode 5 and source electrode 6, are provided with semiconductor channel material 4 between drain electrode 5 and source electrode 6, be provided with for red in source electrode
The quantum dot layer 7 of outer opto-electronic conversion, quantum dot layer is provided with public electrode 8, constitutes infrared sensor.
For FPD TFT substrate select glass substrate the characteristics of, the present invention using chemical solution method prepare PbS or
Ge quantum dots, as photoelectric conversion material, and using methods such as spin coating, inkjet printing or transfers in glass TFT pole plates
Upper normal temperature deposits photoelectric conversion layer.The methods such as spin coating, inkjet printing and transfer are used by PbS or Ge quantum dot optoelectronics
It is deposited on drain electrode under conversion layer normal temperature.
PbS quantum preparation method is：
A) it is 2 by mole mass ratio:5 prepare lead oxide (PbO) powder and oleic acid (OA) organic solution, and PbO is divided completely
Dissipate in after OA solution, the dispersion liquid is dissolved in mixed solution of octadecylamine (ODA) solution allocation as 14.5wt%.This is mixed
Solution is placed in three neck round bottom, is vacuumized flask using vavuum pump, is taken out once within every 20 minutes, is taken out altogether three times.Secondly it is logical
Enter nitrogen about 5 minutes, nitrogen protective atmosphere is formed in flask and is enclosed.Mixed solution is sufficiently stirred for and is heated under nitrogen protection
180 DEG C, until PbO is completely dissolved in solution..
B) the solution natural cooling for obtaining above-mentioned reaction, will be 0.02 in liquid volume ratio when temperature is down to 140 DEG C
Hexamethyldisilathiane (TMS) and 0.13 n-octadecane (ODE) mixed solution be injected into the reaction solution that step a) is obtained
In body and it is sufficiently stirred for.
C) the solution injection liquid volume ratio obtained to step b) is 0.4 hexane solution, and will mix complete solution
It is transferred in the bain-marie of ambient temperature, fluid temperature is reduced to room temperature, obtains PbS quantum solution.
D) by enough isopropanols and acetone soln according to volume ratio 1:2 mixing, form cleaning solution.Step (c) is obtained
The PbS quantum solution injection cleaning solution for arriving, is centrifuged 5 minutes using centrifuge under the conditions of 7000 revs/min, is layered
Centrifugation solution.The upper solution of the centrifugation solution being layered is outwelled, enough cleaning solutions, repeated centrifugation cleaning is rejoined
Process 3~4 times.The centrifugation that last time is obtained is outwelled on solution upper strata layer by layer, is obtained molten by the PbS quantum of first wash
Liquid.
E) methanol solution and acetone soln are mixed, forms cleaning solution.The quantum dot solution injection that step (d) is obtained
The cleaning solution, and according to the eccentric cleaning method shown in (d), then clean 3 to 4 times, obtain the PbS quantum by cleaning twice
Point solution.
F) finally the PbS quantum solution that step (e) is obtained is positioned in vacuum cavity, is dried about under the conditions of 60 DEG C
10 hours, obtain PbS quantum powder.
The preparation method of Ge quantum dots is：
A) by GeO2Powder is dissolved in NaOH alkali lye, obtains Ge acid ion precursor liquids, and the pH value of precursor liquid is adjusted into 6
~8 or so, during natural biological macromolecular shitosan dissolved in into the solution, it is about 100 using magnetic stirrer mixing speed~
300rpm, is well mixed and filters out insoluble matter using filter paper, obtains well dispersed reaction liquid.
B) by NaBH4It is added in the reactant of step (a) acquisition, NaBH4With GeO2Mol ratio be 4：1.To above obtain
To mixing liquid stirred in nitrogen protection, mixing speed is about 800~1000rpm.By generationization during stirring
Reaction is learned, will be controlled in the reaction time 2~4 hours, obtain the sample solution of rufous.
C) after using bag filter to dialyse 24 hours the orange-red solution that step (b) reaction is obtained, freeze-drying is centrifuged
Powder is obtained, and powder is dissolved in yellow solution is formed among toluene, obtain Ge nano particle dilutions.
D) it is 69wt% nitric acid HNO to use mass fraction3With 46wt% hydrofluoric acid HF with volume ratio be (1:4) mix and make
It is hydrogenation and oxidizing agent solution.
E) the Ge nano particle dilutions that step (c) is obtained are placed in polytetrafluoroethylene beaker, and beaker are placed in super
Sonic oscillation in sound cleaning machine.Use micro liquid inlet device with 10s once, the hydrogen that the speed of 2 μ L volumes obtains step (e) every time
Change and instilled to Ge nano particle dilutions with oxidizing agent solution, produce hydrogenation and oxidation reaction.
F) reaction time of step (e) was controlled between 10 to 40 minutes, and thus controls the size of quantum dot big
It is small.Among the course of reaction, the surface of Ge quantum dots will be oxidized by nitric acid for chromium oxide and quickly by hydrofluoric acid hydrogen first
Turn to GexOyHzShell structurre, and prevent Ge materials from continuing to be oxidized.
G) finally using PVDF (Polyvinylidenefluoride) filter paper filtration step that aperture size is 100nm
F reaction solution that () is obtained, take out after the quanta point material drying that PVDF filter paper is collected in filter paper by quantum dot be dissolved in toluene it
In, obtain Ge quantum dot solutions.
Infrared Detectors proposed by the present invention, its public electrode is prepared using sputtering, is led to INFRARED ABSORPTION is less
Electric material is constituted, such as ITO.Thoroughly infrared conduction electricity is prepared on photoelectric conversion layer using the method for the thin film depositions such as sputtering
Pole, such as indium-tin oxide electrode.
It is the top plan view with reference to Fig. 1 with reference to Fig. 2.The structure and preparation technology and flat-panel display device of detector substrate
Substrate, such as TFT-LCD substrates and TFT-OLED substrates are just the same, it is not limited to the basic structure shown in Fig. 1 and Fig. 2.
It is ranks addressing and the drive signal of detection array with reference to Fig. 3.Wherein line driver and detection array each pixel
Gate electrode 2 be connected, row driver is connected with the drain electrode of each pixel.When certain a line applies a voltage pulse
When, the row pixel is selected.Apply row selects signal on gate electrode 2, column selection signal is applied on drain electrode 5, realize passing
Sense element address.Now, to the gradually applied voltage pulse of each alignment, to that should go in each detected pixel gradually work,
The photogenerated current or voltage of each detected pixel are exported by public electrode.Each detection is chronologically exported on public electrode 8
The opto-electronic conversion electric current of unit, and output signal amplification is carried out by amplifier, so as to complete the detection of infrared image.
It is the circuit structure of single detected pixel with reference to Fig. 4.Wherein FET is provided by flat-panel monitor TFT substrate
, and photo resistance is made up of FET source electrode, quantum dot optoelectronic conversion layer and public electrode.
The present invention uses the TFT substrate circuit of flat-panel display device as the reading circuit of detection array, and preparation technology is non-
It is often ripe.Compared with existing infrared detection technique, it is possible to achieve prepared by large area and low cost.Using sensor of the invention
Structure and preparation technology, sensor array area can increase to more than 50 inches, and device cost can be less than 100 dollars/English
It is very little.In addition, in the present invention, TFT substrate is prepared using low temperature thin film technique, photoelectric conversion layer then uses spin coating, inkjet printing
Or transfer etc. method deposit at normal temperatures, common electrode by sputter prepare.Therefore, panel detector structure proposed by the present invention and
Preparation method, goes for the flexible substrates such as plastics, polymer, prepares flexible infrared detector, meets Wearable and sets
The need for standby.
The invention major advantage is using ripe FPD preparation technology, so reducing cost.In addition, using thin
Film transistor technology, it is possible to prepared by large area.
The above is only the preferred embodiment of the present invention, it should be pointed out that：For the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (10)
1. a kind of large area infrared detector based on FPD TFT substrate, it is characterised in that：Using TFT substrate, its knot
Structure is：Gate electrode (2), and drain electrode (5) and source class electrode (6) are set as substrate, above with glass substrate (1)；
The top of the gate electrode (2) and outer side covers have insulating medium layer (3), the drain electrode (5) and source class electrode
(6) insulating medium layer (3) both sides being located at respectively and being connected with its top and both sides, the drain electrode (5) and source class are electric
Semiconductor channel (4) is provided between pole (6)；
The source electrode (6) is provided with quantum dot optoelectronic conversion layer (7), and quantum dot optoelectronic conversion layer (7) top is provided with
Public electrode (8).
2. the large area infrared detector based on FPD TFT substrate according to claim 1, it is characterised in that：
Infrared electro transition material used by the quantum dot optoelectronic conversion layer (7) is PbS or Ge semiconductor-quantum-points.
3. the large area infrared detector based on FPD TFT substrate according to claim 2, it is characterised in that：
The PbS semiconductor-quantum-points are prepared using chemical solution method, specific as follows：
A) it is 2 by mole mass ratio:Lead oxide powder is scattered in oleic acid organic solution by 5, and it is molten that the dispersion liquid is dissolved in into octadecylamine
Liquid is configured as the mixed solution of 14.5wt%；The mixed solution is placed in three neck round bottom, is vacuumized；Next is passed through nitrogen
Gas, in flask forming nitrogen protective atmosphere encloses, and is under nitrogen protection sufficiently stirred for mixed solution and is heated to 180 DEG C, until
PbO is completely dissolved in solution；
B) the solution natural cooling for obtaining above-mentioned reaction, when temperature is down to 140 DEG C, by with liquid volume than six for 0.02
The silithiane of methyl two and 0.13 n-octadecane mixed solution are injected into the reaction liquid that step a) is obtained and are sufficiently stirred for；
C) the solution injection liquid volume obtained to step b) is well mixed than the hexane solution for 0.4, and will mix complete
Solution be transferred in the bain-marie of ambient temperature, fluid temperature is reduced to room temperature, obtain PbS quantum solution；
D) the PbS quantum solution carries out eccentric cleaning using cleaning solution, removes a layer solution, the PbS amounts after being cleaned
Son point solution；The cleaning solution respectively is mixed solution, methanol solution and the acetone soln of isopropanol and acetone soln
Mixing；
E) finally the PbS quantum solution that step d) is obtained is positioned in vacuum cavity, drying 10 is small under the conditions of 60 DEG C
When, obtain PbS quantum powder.
4. the large area infrared detector based on FPD TFT substrate according to claim 3, it is characterised in that：
The cleaning method of the step d), specially：
First wash：Isopropanol and acetone soln first is according to volume ratio 1:2 mixing, form cleaning solution, and step c) is obtained
PbS quantum solution injection cleaning solution, 7000 revs/min of centrifuge is centrifuged 5 minutes, the centrifugation solution being layered；Will
The upper solution of the centrifugation solution of layering is outwelled, and rejoins cleaning solution, and repeated centrifugation cleaning process 3~4 times takes last
Lower floor's solution after secondary centrifugation, that is, obtain by the PbS quantum solution of first wash；
Secondary cleaning：By methanol solution and acetone soln according to volume ratio 1:2 mixing, form cleaning solution, will be by first clear
The PbS quantum solution washed injects the cleaning solution, and according to the eccentric cleaning method of first wash, then clean 3 to 4 times, obtain
Must be by the PbS quantum solution that cleans twice.
5. the large area infrared detector based on FPD TFT substrate according to claim 2, it is characterised in that：
The Ge semiconductor-quantum-points are prepared using chemical solution method, specific as follows：
A) by GeO2Powder is dissolved in NaOH alkali lye, obtains Ge acid ion precursor liquids, and the pH value of precursor liquid is adjusted into 6~8,
During natural biological macromolecular shitosan dissolved in into the solution, it is well mixed using the mixing speed of 100~300rpm of magnetic stirrer,
Insoluble matter is filtered out, well dispersed reaction liquid is obtained；
B) according to NaBH4With GeO2Mol ratio 4：1 ratio is by NaBH4In adding the reaction liquid；Mixing liquid is protected in nitrogen
2~4h is stirred with 800~1000rpm speed in shield, rufous sample solution is obtained；
C) the rufous sample solution is dialysed 24h, centrifugation freeze-drying obtains powder, and powder is dissolved in shape among toluene
Yellowly solution, obtains Ge nano particle dilutions；
D) the Ge nano particles dilution is placed in polytetrafluoroethylene beaker, and carries out sonic oscillation；Using micro feed liquor
With 10s once, the speed of 2 μ L volumes will be hydrogenated and instilled to Ge nano particle dilutions with oxidizing agent solution device every time, produce hydrogen
Change and oxidation reaction；
E) reaction solution that step d) is obtained is filtered with the PVDF filter paper in 100nm apertures, collects quanta point material, will amount after drying
Son point is dissolved among toluene, obtains Ge quantum dot solutions.
6. the large area infrared detector based on FPD TFT substrate according to claim 5, it is characterised in that：
Hydrogenation in the step d) is with oxidizing agent solution：It is 69wt% nitric acid and 46wt% hydrofluoric acid with volume to use mass fraction
Than 1:4 mix.
7. the large area infrared detector based on FPD TFT substrate according to claim 5, it is characterised in that：
The reaction time of the step d) is 10~40 minutes, thus controls the size of quantum dot；Among the course of reaction, Ge
The surface of quantum dot will first be oxidized by nitric acid as chromium oxide and be Ge by hydrofluoric acid hydrogenationxOyHzShell structurre, and prevent Ge
Material continues to be oxidized.
8. the large area infrared detector based on FPD TFT substrate according to claim 2, it is characterised in that：
The preparation method of the quantum dot optoelectronic conversion layer (7) is：Can be sensed in deposition under normal temperature in the source electrode (6) top red
PbS the or Ge quantum dot optoelectronic conversion layers of external signal, using the method including low temperature spin coating, inkjet printing or transfer.
9. the large area infrared detector based on FPD TFT substrate according to claim 1, it is characterised in that：
The preparation method of the public electrode (8) is：Using including sputtering at interior film on the quantum dot optoelectronic conversion layer (7)
Deposition process prepares thoroughly infrared conductive electrode, including transparent conductive indium-tin oxide layer, as public electrode (8).
10. according to the driving of any described large area infrared detectors based on FPD TFT substrate of claim 1-9
Method, it is characterised in that：Comprise the following steps：
1) apply row selects signal on gate electrode (2), column selection signal is applied on drain electrode (5), realize that sensing unit is sought
Location；
2) the opto-electronic conversion electric current of each probe unit is chronologically exported on public electrode (8), and is carried out by amplifier defeated
Go out signal amplification, so as to complete the detection of infrared image.
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