CN203205856U - Electrostatic protection circuit and battery protection circuit thereof - Google Patents
Electrostatic protection circuit and battery protection circuit thereof Download PDFInfo
- Publication number
- CN203205856U CN203205856U CN 201220650643 CN201220650643U CN203205856U CN 203205856 U CN203205856 U CN 203205856U CN 201220650643 CN201220650643 CN 201220650643 CN 201220650643 U CN201220650643 U CN 201220650643U CN 203205856 U CN203205856 U CN 203205856U
- Authority
- CN
- China
- Prior art keywords
- link
- battery
- trap
- discharge
- injection region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
Abstract
The utility model provides an electrostatic protection circuit and a battery protection circuit. The electrostatic protection circuit is used in an integrated circuit which is provided with a first connecting end and a second connecting end. The electrostatic protection circuit comprises an electrostatic protection device which is connected with the first connecting end and the second connecting end; the electrostatic protection device comprises a buried layer, a P well arranged above the buried layer, N wells which are arranged above the buried layer and are adjacent to the P well, a first implant zone which is formed on an upper portion of the P well in an implanting manner, and second implant zones which are formed on upper portions of the N wells in an implanting manner, wherein the first implant zone is connected with the first connecting end, and the second implant zones are connected with the second connecting end. The electrostatic protection circuit of the utility model is advantageous in that the electrostatic protection circuit can assist in preventing the burnout of the electrostatic protection device inside the battery protection circuit when a charger is reversely connected.
Description
[technical field]
The utility model relates to circuit design field, particularly a kind of electrostatic discharge protective circuit and battery protecting circuit thereof.
[background technology]
Fig. 1 shows a kind of structure chart of battery protection system.As shown in Figure 1, described battery protection system comprises battery battery core Bat, resistance R 1, capacitor C 1, battery protecting circuit 110, resistance R 2, charge power switch 130 and discharge power switch 120.Resistance R 1 and capacitor C 1 are series between the anodal B+ and negative pole B-of battery battery core Bat, charge power switch and discharge power switch series are coupled between the negative pole P-of the negative pole B-of battery battery core and battery, and the anodal B+ of battery battery core Bat is directly and between the anodal P+ of battery.
Described discharge power switch comprises NMOS (N-channel Metal Oxide Semiconductor) field effect transistor M N1 and parasitizes the interior diode D1 of its body.Described charge power switch comprises nmos fet MN2 and parasitizes the interior diode D2 of its body.The drain electrode of nmos pass transistor MN1 links to each other with the drain electrode of nmos pass transistor MN2, and the source electrode of nmos pass transistor MN1 links to each other with the negative pole B-of battery battery core, and the source electrode of nmos pass transistor MN2 links to each other with the negative pole P-of battery.
Described battery protecting circuit 110 comprises three links (or being called the test side) and two control ends; three links are respectively the anodal B+ link of battery battery core (or claiming power end) VDD; battery battery core negative pole B-link VSS and battery cathode P-link VM, two control ends are respectively charging control end COUT and discharge control end DOUT.Wherein link VDD is connected between resistance R 1 and the capacitor C 1, and link VSS links to each other with the negative pole B-of battery battery core, and link VM is connected in the negative pole P-of battery by resistance R 2, charging control end C
OUTLink to each other the i.e. grid of nmos pass transistor MN2, discharge control end D with the control end of charge power switch 130
OUTLink to each other with the control end of discharge power switch 120, i.e. the grid of nmos pass transistor MN1.
Described battery protecting circuit 110 can carry out charge protection and discharge prevention to battery battery core Bat.When charging normal, described battery protecting circuit 110 control nmos pass transistor MN2 conductings, nmos pass transistor MN1 ends, and charging current flows to nmos pass transistor MN2 from the body diode D1 of nmos pass transistor MN1.When unusual (such as charging overcurrent and charging overvoltage) took place in charging, described battery protecting circuit 110 control nmos pass transistor MN2 ended, thereby have cut off charging process.When carrying out regular picture, described battery protecting circuit 110 control nmos pass transistor MN2 end, nmos pass transistor MN1 conducting, and discharging current flows to nmos pass transistor MN1 from the body diode D2 of nmos pass transistor MN2.When unusual (such as discharge overcurrent and discharge overvoltage) took place in discharge, described battery protecting circuit 110 control nmos pass transistor MN1 ended, thereby have cut off discharge process.
Electrostatic defending is extremely important concerning integrated circuit, has carried out many researchs in industrial quarters.No matter be the normal use at electronic equipment, fortune elm and stock, and all static discharge might take place producing the various integrated circuit components of assembling.These static discharges that are difficult to correct prediction and strick precaution can damage integrated circuit, produce fraction defective, even cause huge loss.When present integrated circuit (IC) design and manufacturing, all can pay special attention to the design of ESD protection circuit.ESD protection circuit normally is connected between two different pins, and is in parallel with internal circuit.Along with the electrostatic charge at ESD protection circuit two ends constantly accumulates; the voltage at these two ends will constantly increase; in case reach the activation discharge threshold of ESD protection circuit, ESD protection circuit just begins bleed off static, thus the function of realization protection internal circuit.Activation discharge threshold described here is puncture voltage (breakdown voltage) for most prior art.
Usually, the battery protecting circuit 110 among Fig. 1 is chip pieces, also needs to arrange electrostatic discharge protective circuit (ESD) between its each link.Especially, between power end VDD and battery cathode link VM, also be provided with as shown in Figure 2 electrostatic protection device.As shown in Figure 2, described electrostatic protection device comprise n type buried layer DN, be positioned at n type buried layer DN top P trap PWELL, be positioned at n type buried layer top and two N trap NWELL that P trap PELL is clipped in the middle, inject the N-type injection region N_implant and the P type injection region P_implant that form on the top of P trap PWELL, inject the N-type injection region N_implant that forms on the top of N trap.N_implant is that the degree of depth is more shallow but N-type that concentration is higher is injected, and P_implant is that the degree of depth is more shallow but P type that concentration is higher injects.
As shown in Figure 2; the N-type injection region on P trap top all links to each other with link VM with P type injection region; the N-type injection region on N trap top links to each other with power end VDD; electrostatic protection device among Fig. 2 is a triode; wherein NWELL forms collector electrode; P type injection region P_implant and P trap PWELL form base stage, and N-type injection region N_implant forms emitter-base bandgap grading.When between VDD and VM, static occurring, thus the breakdown big current path that provides static to discharge of this triode.
Yet as shown in Figure 3, this electrostatic protection device can form a parasitic diode ESD-Diode, and its PN junction by P trap PWELL and N trap NWELL constitutes.Because belonging to static, this diode discharges discharge path; so can not in battery protecting circuit, increase the electric current that this parasitic diode is flow through in the current-limiting resistance restriction; if charger polarity connects instead in the battery applications; battery cathode P-end can be recharged device and draw high and be higher than P+ end; when VM voltage is higher than VDD; have very big electric current and flow through this parasitic diode, cause the battery protecting circuit chip to burn, burn out or operation irregularity for preventing the battery protecting circuit chip.When generally limiting the P-current potential and be higher than the P+ current potential by external current-limiting resistance R2, the battery protection industry flows into the electric current of battery protecting circuit chip from the VM end.
Like this, just in application circuit, additionally increase a discrete device resistance, increased system cost.Therefore be necessary to provide a kind of improved technical scheme to overcome the problems referred to above.
[utility model content]
The purpose of this utility model is the battery protecting circuit chip that a kind of electrostatic discharge protective circuit is provided and uses this electrostatic discharge protective circuit, burns the electrostatic protection device in the battery protecting circuit in the time of can preventing the charger reversal connection.
In order to address the above problem; according to one side of the present utility model; the utility model provides a kind of electrostatic discharge protective circuit of integrated circuit; described integrated circuit has first link and second link; described electrostatic discharge protective circuit comprises the electrostatic protection device that is connected in first link and second link; this electrostatic protection device comprises buried regions; be positioned at the P trap of buried regions top; be positioned at buried regions top and the N trap adjacent with the P trap; inject first injection region that forms and second injection region of injecting formation on the top of N trap on the top of P trap; wherein first injection region links to each other with first link, and second injection region links to each other with second link.
Further, buried regions is N-type, and first injection region and second injection region are N-type, described N trap is two, two N traps are clipped in the middle the P trap, and the top of each N trap is formed with second injection region, and the N-type doping content of N-type injection region is than the N-type doping content height of N trap.
Further; when between first link and second link, static being arranged; described electrostatic protection device provides the electrostatic leakage path between first link and second link; this electrostatic protection device forms first parasitic diode and second parasitic diode; wherein the negative electrode of first parasitic diode links to each other with second link; the anode of first parasitic diode links to each other with the anode of second parasitic diode, and the negative electrode of second parasitic diode links to each other with first link.
Further, buried regions is the P type, and first injection region and second injection region are the P type, described P trap is two, two P traps are clipped in the middle the N trap, and the top of each P trap is formed with first injection region, and the P type doping content of P type injection region is than the P type doping content height of P trap.
Further; when between first link and second link, static being arranged; described electrostatic protection device provides the electrostatic leakage path between first link and second link; this electrostatic protection device forms first parasitic diode and second parasitic diode; wherein the anode of first parasitic diode links to each other with first link; the negative electrode of first parasitic diode links to each other with the negative electrode of second parasitic diode, and the anode of second parasitic diode links to each other with second link.
According on the other hand of the present utility model; the utility model provides a kind of battery protecting circuit; it comprises the battery cathode link VM that is connected with battery cathode; the battery battery core negative pole link VSS that is connected with the battery battery core negative pole; power end VDD; the charging control end that the discharge control end that is connected with the control end of discharge power switch is connected with the control end with the charge power switch; its also comprise be connected between battery cathode link VM and the power end VDD as the arbitrary described electrostatic protection device of claim 1-5; wherein said battery cathode link VM is first link, and described power end VDD is second link.
Further; described battery protecting circuit also comprise control circuit and be connected on battery cathode link VM and battery battery core negative pole link VSS between discharge path; comprise switching device on this discharge path; diode and resistance R 0; after entering discharge overcurrent protection state; described switching device conducting controlled by described control circuit so that the discharge path conducting between battery cathode link and the battery battery core negative pole link; described control circuit determines whether to withdraw from discharge overcurrent protection state according to the voltage of battery cathode link; after determining to withdraw from discharge overcurrent protection state, described control circuit is controlled described switching device and is ended so that the discharge path between battery cathode link and the battery battery core negative pole link ends.
Further, the negative electrode of described diode connects a link of described switching device, the anode of described diode links to each other with described battery cathode link, another link of described switching device links to each other with described battery battery core negative pole link, and described discharge path provides milliampere rank and following electric current.
Further; under discharge overcurrent protection state; when the voltage of described battery cathode link is lower than predetermined voltage threshold; described control circuit determines to withdraw from discharge overcurrent protection state, and described control circuit determines whether to enter discharge overcurrent protection state according to the pressure reduction between battery cathode link and the battery battery core negative pole link.
Further, described switching device is nmos fet, and described control circuit outputs control signals to the grid of described nmos fet.
Compared with prior art; electrostatic protection device in the utility model is formed with two series diodes that the positively biased direction is opposite; these two diodes guarantee normal working voltage respectively; and the withstand voltage and anti-creeping ability of battery protecting circuit chip during the reversal connection charger, can save the resistance of the external link VM of giving in the battery protecting circuit chip application circuit like this.
[description of drawings]
In order to be illustrated more clearly in the technical scheme of the utility model embodiment, the accompanying drawing of required use is done to introduce simply in will describing embodiment below, apparently, accompanying drawing in describing below only is embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.Wherein:
Fig. 1 is the structural representation of battery protecting circuit system;
Fig. 2 is the structural representation of existing electrostatic protection device;
Fig. 3 is the structural representation of the parasitic diode of the electrostatic protection device among Fig. 2;
Fig. 4 is the structural representation of the electrostatic protection device among the embodiment of the present utility model;
Fig. 5 is the structural representation of the parasitic diode of the electrostatic protection device among Fig. 4;
Fig. 6 is the structural representation of the electrostatic protection device among another embodiment of the present utility model;
Fig. 7 is the structural representation of the parasitic diode of the electrostatic protection device among Fig. 6;
Fig. 8 is the topology example figure of the discharge overcurrent self-repairing circuit in the battery protecting circuit among Fig. 1.
[embodiment]
For above-mentioned purpose of the present utility model, feature and advantage can be become apparent more, below in conjunction with the drawings and specific embodiments the utility model is described in further detail.
Alleged " embodiment " or " embodiment " refers to be contained in special characteristic, structure or the characteristic at least one implementation of the utility model herein.Different local in this manual " in one embodiment " that occur not are all to refer to same embodiment, neither be independent or the embodiment mutually exclusive with other embodiment optionally.Unless stated otherwise, the word that connection herein, the expression that links to each other, joins electrically connect is all represented directly or indirectly to be electrical connected.
Fig. 4 is the structural representation of the electrostatic protection device among the embodiment of the present utility model.As shown in the figure; this electrostatic protection device comprises n type buried layer DN; be positioned at the P trap PWELL of n type buried layer DN top; be positioned at two N trap NWELL of n type buried layer top and clamping P trap PWELL; inject the N-type injection region N_implant (or claiming first injection region) that forms and the N-type injection region N_implant (or claiming second injection region) that injects formation on the top of N trap NWELL on the top of P trap PWELL; wherein the power end VDD of the battery protecting circuit chip among the N-type injection region in the N trap and Fig. 1 links to each other, and the link VM of the battery protecting circuit chip among the N-type injection region in the P trap and Fig. 1 links to each other.N_implant is that the degree of depth is more shallow but N-type that concentration is higher is injected.
Can see; scheme with respect to the electrostatic protection device of Fig. 2; Fig. 4 has removed the P type injection region P_implant among the P trap PWELL; such way makes power end VDD to having formed two structures that diode is connected back-to-back between the link VM in the NPN audion that the reservation electrostatic protection device needs.Shown in Figure 4 and 5, P trap PWELL has formed the first parasitic diode ESD_diode1 among Fig. 5 to N trap NWELL, and the N-type injection region N_implant among the PWELL has formed second parasitic diode ESD_diode2 among Fig. 5 to P trap PWELL.
In conjunction with reference to shown in figure 1 and 5; discharge on the path to the static of link VM at power end VDD; design ESD device architecture as shown in Figure 4; so both can guarantee to discharge path at power end VDD to forming static between the link VM; can make it form two series diodes that the positively biased direction is opposite again; wherein the negative electrode of the first parasitic diode ESD_diode1 links to each other with power end VDD; the anode of the first parasitic diode ESD_diode1 links to each other with the anode of the second parasitic diode ESD_diode2; the negative electrode of the second parasitic diode ESD_diode2 links to each other with link VM; two diodes guarantee normal working voltage respectively; and the ability of the withstand voltage and anti-leak source of chip during the reversal connection charger, can save the resistance R 2 of the external link VM of giving in the application circuit as the battery protecting circuit chip among Fig. 1 like this.
Fig. 6 is the structural representation of the electrostatic protection device among another embodiment of the present utility model.As shown in the figure; this electrostatic protection device comprises p type buried layer DP; be positioned at the N trap NWELL of p type buried layer DP top; be positioned at two P trap PWELL of p type buried layer top and clamping N trap NWELL; inject the P type injection region P_implant (or claiming first injection region) that forms and the P type injection region P_implant (or claiming second injection region) that injects formation on the top of N trap NWELL on the top of P trap PWELL; wherein the link VM of the battery protecting circuit chip among the P type injection region in the P trap and Fig. 1 links to each other, and the power end VDD of the battery protecting circuit chip among the P type injection region in the N trap and Fig. 1 links to each other.P_implant is that the degree of depth is more shallow but P type that concentration is higher injects.
Shown in Fig. 6 and 7, N trap NWELL has formed the first parasitic diode ESD_diode1 among Fig. 7 to P trap PWELL, and the P type injection region P_implant among the NWELL has formed second parasitic diode ESD_diode2 among Fig. 7 to N trap NWELL.
In conjunction with reference to shown in figure 1 and 7; discharge on the path to the static of link VM at power end VDD; design ESD device architecture as shown in Figure 6; so both can guarantee to discharge path at power end VDD to forming static between the link VM; can make it form two series diodes that the positively biased direction is opposite again; wherein the anode of the first parasitic diode ESD_diode1 links to each other with link VM; the negative electrode of the first parasitic diode ESD_diode1 links to each other with the negative electrode of the second parasitic diode ESD_diode2; the anode of the second parasitic diode ESD_diode2 links to each other with power end VDD; two diodes guarantee normal working voltage respectively; and the ability of the withstand voltage and anti-leak source of chip during the reversal connection charger, can save the resistance R 2 of the external link VM of giving in the application circuit as the battery protecting circuit chip among Fig. 1 like this.
Those of ordinary skill in the affiliated field can be understood that the electrostatic protection device among Fig. 4 and Fig. 6 can also be used for other integrated circuits or chip carry out electrostatic protection, and it can be connected between any two pins or link of chip.
Except the change of electrostatic protection device, the battery protecting circuit in the utility model also has other improvement, hereinafter will describe in detail.
Please refer to shown in Figure 1ly, the annexation of wherein each part etc. had all been described in background, no longer was repeated in this description here.When discharge, battery protecting circuit 110 judges whether the overcurrent that discharges by the pressure reduction between link VM (being the negative pole P-of battery) and the VSS (being the negative pole B-of battery battery core).This moment, the voltage of VM end was higher than the voltage that VSS holds, and pressure reduction between the two and discharging current proportion relation.If differential pressure surpasses predetermined voltage threshold, think that then discharging current surpasses predetermined current threshold, then start the discharge overcurrent protection function, control end D will discharge
OUTBe pulled down to the negative pole B-current potential of battery battery core, forbid that described discharge power switch 120 discharges.When the reason of discharge overcurrent is eliminated, wish that described battery protecting circuit 110 can detect automatically, and from the discharge over-current state, recover automatically.
In the utility model; as shown in Figure 8; comprise control circuit in the described battery protecting circuit 110 and be arranged at link VM and link VSS between discharge path, described discharge path comprises resistance R 0, diode D0 and the switching device MN0 that is connected in successively between link VM and the link VSS.Described control circuit judges whether the overcurrent that discharges according to the pressure reduction between link VM (being the negative pole P-of battery) and the VSS (being the negative pole B-of battery battery core); when detecting the discharge overcurrent; forbid 120 discharges of discharge power switch; so just entered discharge overcurrent protection state; meanwhile; it also controls described switching device MN0 conducting, makes discharge path conducting between link VM and the link VSS like this.
In discharge during overcurrent protection, the load meeting between the both positive and negative polarity P+/P-of battery is drawn high current potential near anodal P+ to negative pole P-voltage, and the voltage held of VM can be higher than the voltage that VSS holds like this.And in the utility model; be provided with the path between link VM and VSS of a conducting under the discharge over-current state; like this under the discharge prevention state; link VSS provides a pull-down current to link VM; in case the reason of discharge overcurrent is eliminated; eliminate such as short circuit, the voltage of link VM will be dragged down.Therefore, determine whether to withdraw from discharge overcurrent protection state at control circuit described in the utility model according to the voltage of link VM.When if the voltage of link VM is lower than predetermined voltage threshold under the discharge over-current state, described control circuit then determines to withdraw from discharge overcurrent protection state, controls described discharge power switch 120 and recovers regular picture, otherwise continue to keep discharge overcurrent protection state.After described control circuit 210 determines to withdraw from discharge overcurrent protection state, control described switching device MN0 and end, make that like this discharge path between link VM and the link VSS ends, and prevent electric leakage.
In order to reduce power consumption, under discharge overcurrent protection state, from link V
MFlow to link V
SSPull-down current very little, be milliampere and following other electric current of level, the size that in the utility model, can regulate described pull-down current by the size that resistance R 0 is set.
The negative electrode of described diode D0 connects the link of described switching device MN0, and described anode links to each other with link VM, and another link of described switching device MN0 links to each other with link VSS.
In one embodiment, as shown in Figure 2, described switching device MN0 is nmos fet, and its grid connects described control circuit, and described control circuit output control signal S1 controls the conducting of described switching device MN0 and ends.When entering discharge overcurrent protection state, control switch device MN0 conducting, when withdrawing from the discharge over-current state, control switch device MN0 ends.Diode D0 is used for allowing link VM unidirectional by electric current to link VSS, stops VSS to leak electricity to VM, and utilizes the reverse voltage endurance capability of diode D0 to bear VM to most pressure drops of VSS when VM voltage is lower than VSS.Resistance R 0 also can be positioned between MN0 and the diode D0, can also be positioned between MN0 and the VSS.
In the utility model, the word that expression such as " connection ", " linking to each other ", " company ", " connecing " electrically connects if no special instructions, is then represented direct or indirect electric connection.
It is pointed out that and be familiar with the scope that any change that the person skilled in art does embodiment of the present utility model does not all break away from claims of the present utility model.Correspondingly, the scope of claim of the present utility model also is not limited only to previous embodiment.
Claims (10)
1. electrostatic discharge protective circuit; it is used for integrated circuit; described integrated circuit has first link and second link; it is characterized in that; described electrostatic discharge protective circuit comprises the electrostatic protection device that is connected in first link and second link; this electrostatic protection device comprises buried regions, be positioned at the buried regions top the P trap, be positioned at buried regions top and the N trap adjacent with the P trap, inject first injection region that forms on the top of P trap and inject second injection region that forms on the top of N trap
Wherein first injection region links to each other with first link, and second injection region links to each other with second link.
2. electrostatic discharge protective circuit according to claim 1; it is characterized in that; buried regions is N-type; first injection region and second injection region are N-type; described N trap is two; two N traps are clipped in the middle the P trap, and the top of each N trap is formed with second injection region, and the N-type doping content of N-type injection region is than the N-type doping content height of N trap.
3. electrostatic discharge protective circuit according to claim 2 is characterized in that, when between first link and second link static being arranged, described electrostatic protection device provides the electrostatic leakage path between first link and second link,
This electrostatic protection device forms first parasitic diode and second parasitic diode; wherein the negative electrode of first parasitic diode links to each other with second link; the anode of first parasitic diode links to each other with the anode of second parasitic diode, and the negative electrode of second parasitic diode links to each other with first link.
4. electrostatic discharge protective circuit according to claim 1 is characterized in that, buried regions is the P type, and first injection region and second injection region are the P type, and described P trap is two, and two P traps are clipped in the middle the N trap,
The top of each P trap is formed with first injection region, and the P type doping content of P type injection region is than the P type doping content height of P trap.
5. electrostatic discharge protective circuit according to claim 4 is characterized in that, when between first link and second link static being arranged, described electrostatic protection device provides the electrostatic leakage path between first link and second link,
This electrostatic protection device forms first parasitic diode and second parasitic diode; wherein the anode of first parasitic diode links to each other with first link; the negative electrode of first parasitic diode links to each other with the negative electrode of second parasitic diode, and the anode of second parasitic diode links to each other with second link.
6. battery protecting circuit; the charging control end that the discharge control end that it comprises the battery cathode link VM that is connected with battery cathode, the battery battery core negative pole link VSS, the power end VDD that are connected with the battery battery core negative pole, be connected with the control end of discharge power switch is connected with the control end with the charge power switch
It is characterized in that, its also comprise be connected between battery cathode link VM and the power end VDD as the arbitrary described electrostatic protection device of claim 1-5, wherein said battery cathode link VM is first link, described power end VDD is second link.
7. battery protecting circuit according to claim 6; it is characterized in that; its also comprise control circuit and be connected on battery cathode link VM and battery battery core negative pole link VSS between discharge path, comprise switching device, diode and resistance R 0 on this discharge path
After entering discharge overcurrent protection state, described switching device conducting controlled by described control circuit so that the discharge path conducting between battery cathode link and the battery battery core negative pole link,
Described control circuit determines whether to withdraw from discharge overcurrent protection state according to the voltage of battery cathode link; after determining to withdraw from discharge overcurrent protection state, described control circuit is controlled described switching device and is ended so that the discharge path between battery cathode link and the battery battery core negative pole link ends.
8. battery protecting circuit according to claim 7; it is characterized in that; the negative electrode of described diode connects a link of described switching device; the anode of described diode links to each other with described battery cathode link; another link of described switching device links to each other with described battery battery core negative pole link, and described discharge path provides milliampere rank and following electric current.
9. battery protecting circuit according to claim 7; it is characterized in that; under discharge overcurrent protection state; when the voltage of described battery cathode link is lower than predetermined voltage threshold; described control circuit determines to withdraw from discharge overcurrent protection state, and described control circuit determines whether to enter discharge overcurrent protection state according to the pressure reduction between battery cathode link and the battery battery core negative pole link.
10. battery protecting circuit according to claim 7 is characterized in that, described switching device is nmos fet, and described control circuit outputs control signals to the grid of described nmos fet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220650643 CN203205856U (en) | 2012-11-30 | 2012-11-30 | Electrostatic protection circuit and battery protection circuit thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220650643 CN203205856U (en) | 2012-11-30 | 2012-11-30 | Electrostatic protection circuit and battery protection circuit thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203205856U true CN203205856U (en) | 2013-09-18 |
Family
ID=49149924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220650643 Expired - Lifetime CN203205856U (en) | 2012-11-30 | 2012-11-30 | Electrostatic protection circuit and battery protection circuit thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203205856U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103023005A (en) * | 2012-11-30 | 2013-04-03 | 无锡中星微电子有限公司 | Electrostatic protection circuit and battery protection circuit |
| CN105576777A (en) * | 2016-03-09 | 2016-05-11 | 山东汉旗科技有限公司 | Battery protection system |
-
2012
- 2012-11-30 CN CN 201220650643 patent/CN203205856U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103023005A (en) * | 2012-11-30 | 2013-04-03 | 无锡中星微电子有限公司 | Electrostatic protection circuit and battery protection circuit |
| CN103023005B (en) * | 2012-11-30 | 2015-02-04 | 无锡中星微电子有限公司 | Electrostatic protection circuit and battery protection circuit |
| CN105576777A (en) * | 2016-03-09 | 2016-05-11 | 山东汉旗科技有限公司 | Battery protection system |
| CN105576777B (en) * | 2016-03-09 | 2018-06-19 | 山东汉旗科技有限公司 | A kind of battery protection system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101944715B (en) | Load short-circuit protection circuit | |
| CN101552482B (en) | Charge and discharge control circuit and battery device | |
| CN103001206B (en) | Electrostatic discharge (ESD) power clamp for clamping high-voltage power supply in mixed-voltage chip by means of low-voltage transistor | |
| CN101039027B (en) | Improved electrostatic discharge protecting circuit | |
| CN102545162A (en) | Lithium battery protection circuit | |
| CN102148499B (en) | CDM (Charged Device Model) ESD (Electro-Static Discharge) protection circuit | |
| CN106099864A (en) | The short-circuit protection method of a kind of IGBT device for power switching and circuit thereof | |
| CN100547926C (en) | Connect height and tie-low circuit, system and relevant semiconductor device | |
| CN101807790A (en) | Battery protection circuit device | |
| CN101421896A (en) | ESD clamp control by detection of power state | |
| CN102403756A (en) | Charge/discharge control circuit and battery device | |
| CN103646945A (en) | Integrated circuit power supply esd protection circuit | |
| CN103532104A (en) | Battery protection circuit | |
| CN110048476A (en) | A kind of battery protection driving circuit and battery protection drive system | |
| CN201966576U (en) | Load short circuit protection circuit | |
| CN105048422A (en) | Switch transistor voltage drop holding circuit and application of switch transistor voltage drop holding circuit in lithium battery protection circuit | |
| CN201860305U (en) | Overvoltage protection circuit for USB (universal serial bus) analogue switch under power up and power down conditions | |
| CN101340084A (en) | Driving circuit for discharge over-current protection and recovery, battery protection circuit and system | |
| CN104979805B (en) | Bi-directional electrostatic protection circuit and its battery protecting circuit | |
| CN203205856U (en) | Electrostatic protection circuit and battery protection circuit thereof | |
| CN103023005B (en) | Electrostatic protection circuit and battery protection circuit | |
| CN105610122A (en) | Overvoltage, undervoltage and power-off protection circuit formed by MOS transistor | |
| CN104716135A (en) | Electrostatic protection circuit | |
| CN203522159U (en) | Cell protection circuit | |
| CN108598078B (en) | ESD protection circuit and electronic device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 214028 10th Floor, Area A, 530 Building, Qingyuan Road, Taihu International Science Park, Wuxi New District, Jiangsu Province Patentee after: Zgmicro Corporation Address before: 214028 10th Floor, Area A, 530 Building, Qingyuan Road, Taihu International Science Park, Wuxi New District, Jiangsu Province Patentee before: WUXI VIMICRO Corp. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130918 |
|
| CX01 | Expiry of patent term |