CN103023005A - Electrostatic protection circuit and battery protection circuit - Google Patents
Electrostatic protection circuit and battery protection circuit Download PDFInfo
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- CN103023005A CN103023005A CN2012105020233A CN201210502023A CN103023005A CN 103023005 A CN103023005 A CN 103023005A CN 2012105020233 A CN2012105020233 A CN 2012105020233A CN 201210502023 A CN201210502023 A CN 201210502023A CN 103023005 A CN103023005 A CN 103023005A
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Abstract
The invention provides an electrostatic protection circuit and a battery protection circuit. The electrostatic protection circuit of an integrated circuit is characterized in that the integrated circuit is provided with a first connecting end and a second connecting end, the electrostatic protection circuit comprises an electrostatic protection device which is connected with the first connecting end and the second connecting end and comprises a buried layer, a P-well positioned above the buried layer, a N-well positioned above the buried layer and adjacent to the P-well, a first injection region formed through injection at the upper part of the P-well and a second injection region formed through injection at the upper end of the N-well, wherein the first injection region is connected with the first connecting end, and the second injection region is connected with the second connecting end. The electrostatic protection circuit has the advantage that the electrostatic protection device in the battery protection circuit is prevented from being burned up when a charger is reversely connected.
Description
[technical field]
The present invention relates to circuit design field, particularly a kind of electrostatic discharge protective circuit and battery protecting circuit thereof.
[background technology]
Fig. 1 shows a kind of structure chart of battery protection system.As shown in Figure 1, described battery protection system comprises battery battery core Bat, resistance R 1, capacitor C 1, battery protecting circuit 110, resistance R 2, charge power switch 130 and discharge power switch 120.Resistance R 1 and capacitor C 1 are series between the anodal B+ and negative pole B-of battery battery core Bat, charge power switch and discharge power switch series are coupled between the negative pole P-of the negative pole B-of battery battery core and battery, and the anodal B+ of battery battery core Bat is directly and between the anodal P+ of battery.
Described discharge power switch comprises NMOS (N-channel Metal Oxide Semiconductor) field effect transistor M N1 and parasitizes the interior diode D1 of its body.Described charge power switch comprises nmos fet MN2 and parasitizes the interior diode D2 of its body.The drain electrode of nmos pass transistor MN1 links to each other with the drain electrode of nmos pass transistor MN2, and the source electrode of nmos pass transistor MN1 links to each other with the negative pole B-of battery battery core, and the source electrode of nmos pass transistor MN2 links to each other with the negative pole P-of battery.
Described battery protecting circuit 110 comprises three links (or being called the test side) and two control ends; three links are respectively the anodal B+ link of battery battery core (or claiming power end) VDD; battery battery core negative pole B-link VSS and battery cathode P-link VM, two control ends are respectively charging control end COUT and control of discharge end DOUT.Wherein link VDD is connected between resistance R 1 and the capacitor C 1, and link VSS links to each other with the negative pole B-of battery battery core, and link VM is connected in the negative pole P-of battery by resistance R 2, charging control end C
OUTLink to each other the i.e. grid of nmos pass transistor MN2, control of discharge end D with the control end of charge power switch 130
OUTLink to each other with the control end of discharge power switch 120, i.e. the grid of nmos pass transistor MN1.
Described battery protecting circuit 110 can carry out charge protection and discharge prevention to battery battery core Bat.When charging normal, described battery protecting circuit 110 control nmos pass transistor MN2 conductings, nmos pass transistor MN1 cut-off, charging current flows to nmos pass transistor MN2 from the body diode D1 of nmos pass transistor MN1.When charging abnormal (such as charging overcurrent and charging overvoltage), described battery protecting circuit 110 control nmos pass transistor MN2 cut-offs, thus cut off charging process.When carrying out regular picture, described battery protecting circuit 110 control nmos pass transistor MN2 cut-offs, nmos pass transistor MN1 conducting, discharging current flows to nmos pass transistor MN1 from the body diode D2 of nmos pass transistor MN2.When discharge abnormal (such as discharge overcurrent and discharge overvoltage), described battery protecting circuit 110 control nmos pass transistor MN1 cut-offs, thus cut off discharge process.
Electrostatic defending is extremely important concerning integrated circuit, has carried out many researchs in industrial quarters.No matter be the normal use at electronic equipment, fortune elm and stock, and all static discharge might occur producing the various integrated circuit components of assembling.These static discharges that are difficult to correct prediction and strick precaution can damage integrated circuit, produce fraction defective, even cause huge loss.When present integrated circuit (IC) design and manufacturing, all can pay special attention to the design of ESD protection circuit.ESD protection circuit normally is connected between two different pins, and is in parallel with internal circuit.Along with the electrostatic charge at ESD protection circuit two ends constantly accumulates; the voltage at these two ends will constantly increase; in case reach the activation discharge threshold of ESD protection circuit, ESD protection circuit just begins bleed off static, thus the function of realization protection internal circuit.Activation discharge threshold described here is puncture voltage (breakdown voltage) for most prior art.
Usually, the battery protecting circuit 110 among Fig. 1 is chip pieces, also needs to arrange electrostatic discharge protective circuit (ESD) between its each link.Especially, between power end VDD and battery cathode link VM, also be provided with as shown in Figure 2 electrostatic protection device.As shown in Figure 2, described electrostatic protection device comprise n type buried layer DN, be positioned at n type buried layer DN top P trap PWELL, be positioned at n type buried layer top and two N trap NWELL that P trap PELL is clipped in the middle, inject the N-type injection region N_implant and the P type injection region P_implant that form on the top of P trap PWELL, inject the N-type injection region N_implant that forms on the top of N trap.N_implant is that the degree of depth is more shallow but N-type that concentration is higher is injected, and P_implant is that the degree of depth is more shallow but P type that concentration is higher injects.
As shown in Figure 2; the N-type injection region on P trap top all links to each other with link VM with P type injection region; the N-type injection region on N trap top links to each other with power end VDD; electrostatic protection device among Fig. 2 is a triode; wherein NWELL forms collector electrode; P type injection region P_implant and P trap PWELL form base stage, and N-type injection region N_implant forms emitter-base bandgap grading.When between VDD and VM, static occurring, thus the breakdown large current path that provides static to discharge of this triode.
Yet as shown in Figure 3, this electrostatic protection device can form a parasitic diode ESD-Diode, and its PN junction by P trap PWELL and N trap NWELL consists of.Because belonging to static, this diode discharges discharge path; so can not in battery protecting circuit, increase the electric current that this parasitic diode is flow through in the current-limiting resistance restriction; if charger polarity connects instead in the battery applications; battery cathode P-end can be recharged device and draw high and be higher than P+ end; when VM voltage is higher than VDD; have very large electric current and flow through this parasitic diode, cause the battery protecting circuit chip to burn, burn out or operation irregularity for preventing the battery protecting circuit chip.When generally limiting the P-current potential and be higher than the P+ current potential by external current-limiting resistance R2, the battery protection industry flows into the electric current of battery protecting circuit chip from the VM end.
Like this, just in application circuit, additionally increase a discrete device resistance, increased system cost.Therefore be necessary to provide a kind of improved technical scheme to overcome the problems referred to above.
[summary of the invention]
The object of the present invention is to provide a kind of electrostatic discharge protective circuit and use the battery protecting circuit chip of this electrostatic discharge protective circuit, burn the electrostatic protection device in the battery protecting circuit in the time of can preventing the charger reversal connection.
In order to address the above problem; according to an aspect of the present invention; the invention provides a kind of electrostatic discharge protective circuit of integrated circuit; described integrated circuit has the first link and the second link; described electrostatic discharge protective circuit comprises the electrostatic protection device that is connected in the first link and the second link; this electrostatic protection device comprises buried regions; be positioned at the P trap of buried regions top; be positioned at buried regions top and the N trap adjacent with the P trap; inject the first injection region that forms and the second injection region of injecting formation on the top of N trap on the top of P trap; wherein the first injection region links to each other with the first link, and the second injection region links to each other with the second link.
Further, buried regions is N-type, and the first injection region and the second injection region are N-type, described N trap is two, two N traps are clipped in the middle the P trap, and the top of each N trap is formed with the second injection region, and the N-type doping content of N-type injection region is high than the N-type doping content of N trap.
Further; when between the first link and the second link, static being arranged; described electrostatic protection device provides the electrostatic leakage path between the first link and the second link; this electrostatic protection device forms the first parasitic diode and the second parasitic diode; wherein the negative electrode of the first parasitic diode links to each other with the second link; the anode of the first parasitic diode links to each other with the anode of the second parasitic diode, and the negative electrode of the second parasitic diode links to each other with the first link.
Further, buried regions is the P type, and the first injection region and the second injection region are the P type, described P trap is two, two P traps are clipped in the middle the N trap, and the top of each P trap is formed with the first injection region, and the P type doping content of P type injection region is high than the P type doping content of P trap.
Further; when between the first link and the second link, static being arranged; described electrostatic protection device provides the electrostatic leakage path between the first link and the second link; this electrostatic protection device forms the first parasitic diode and the second parasitic diode; wherein the anode of the first parasitic diode links to each other with the first link; the negative electrode of the first parasitic diode links to each other with the negative electrode of the second parasitic diode, and the anode of the second parasitic diode links to each other with the second link.
According to a further aspect in the invention; the invention provides a kind of battery protecting circuit; it comprises the battery cathode link VM that is connected with battery cathode; the battery battery core negative pole link VSS that is connected with the battery battery core negative pole; power end VDD; the charging control end that the control of discharge end that is connected with the control end of discharge power switch is connected with the control end with the charge power switch; its also comprise be connected between battery cathode link VM and the power end VDD such as the arbitrary described electrostatic protection device of claim 1-5; wherein said battery cathode link VM is the first link, and described power end VDD is the second link.
Further; described battery protecting circuit also comprise control circuit and be connected on battery cathode link VM and battery battery core negative pole link VSS between discharge path; comprise switching device on this discharge path; diode and resistance R 0; after entering discharge overcurrent protection state; described switching device conducting controlled by described control circuit so that the discharge path conducting between battery cathode link and the battery battery core negative pole link; described control circuit determines whether to withdraw from discharge overcurrent protection state according to the voltage of battery cathode link; after determining to withdraw from discharge overcurrent protection state, described switching device cut-off controlled by described control circuit so that the cut-off of the discharge path between battery cathode link and the battery battery core negative pole link.
Further, the negative electrode of described diode connects a link of described switching device, the anode of described diode links to each other with described battery cathode link, another link of described switching device links to each other with described battery battery core negative pole link, and described discharge path provides milliampere rank and following electric current.
Further; under discharge overcurrent protection state; when the voltage of described battery cathode link is lower than predetermined voltage threshold; described control circuit determines to withdraw from discharge overcurrent protection state, and described control circuit determines whether to enter discharge overcurrent protection state according to the pressure reduction between battery cathode link and the battery battery core negative pole link.
Further, described switching device is nmos fet, and described control circuit outputs control signals to the grid of described nmos fet.
Compared with prior art; electrostatic protection device among the present invention is formed with the series diode of two positively biased opposite directions; these two diodes guarantee respectively normal working voltage; and the withstand voltage and anti-creeping ability of battery protecting circuit chip during the reversal connection charger, can save so external resistance to link VM in the battery protecting circuit chip application circuit.
[description of drawings]
In order to be illustrated more clearly in the technical scheme of the embodiment of the invention, the accompanying drawing of required use was done to introduce simply during the below will describe embodiment, apparently, accompanying drawing in the following describes only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.Wherein:
Fig. 1 is the structural representation of battery protecting circuit system;
Fig. 2 is the structural representation of existing electrostatic protection device;
Fig. 3 is the structural representation of the parasitic diode of the electrostatic protection device among Fig. 2;
Fig. 4 is the structural representation of the electrostatic protection device in one embodiment of the present of invention;
Fig. 5 is the structural representation of the parasitic diode of the electrostatic protection device among Fig. 4;
Fig. 6 is the structural representation of the electrostatic protection device in an alternative embodiment of the invention;
Fig. 7 is the structural representation of the parasitic diode of the electrostatic protection device among Fig. 6;
Fig. 8 is the topology example figure of the discharge overcurrent self-repairing circuit in the battery protecting circuit among Fig. 1.
[embodiment]
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
Alleged " embodiment " or " embodiment " refer to be contained in special characteristic, structure or the characteristic at least one implementation of the present invention herein.Different local in this manual " in one embodiment " that occur not are all to refer to same embodiment, neither be independent or the embodiment mutually exclusive with other embodiment optionally.Unless stated otherwise, herein connection, the word that the expression that links to each other, join is electrically connected all represents directly or indirectly to be electrical connected.
Fig. 4 is the structural representation of the electrostatic protection device in one embodiment of the present of invention.As shown in the figure; this electrostatic protection device comprises n type buried layer DN; be positioned at the P trap PWELL of n type buried layer DN top; be positioned at two N trap NWELL of n type buried layer top and clamping P trap PWELL; inject the N-type injection region N_implant (or claiming the first injection region) that forms and the N-type injection region N_implant (or claiming the second injection region) that injects formation on the top of N trap NWELL on the top of P trap PWELL; wherein the power end VDD of the battery protecting circuit chip among the N-type injection region in the N trap and Fig. 1 links to each other, and the link VM of the battery protecting circuit chip among the N-type injection region in the P trap and Fig. 1 links to each other.N_implant is that the degree of depth is more shallow but N-type that concentration is higher is injected.
Can see; scheme with respect to the electrostatic protection device of Fig. 2; Fig. 4 has removed the P type injection region P_implant among the P trap PWELL; such way makes power end VDD to having formed two structures that diode is connected back-to-back between the link VM in the NPN audion that the reservation electrostatic protection device needs.Shown in Figure 4 and 5, P trap PWELL has formed the first parasitic diode ESD_diode1 among Fig. 5 to N trap NWELL, and the N-type injection region N_implant among the PWELL has formed second parasitic diode ESD_diode2 among Fig. 5 to P trap PWELL.
In conjunction with reference to shown in figure 1 and 5; discharge on the path to the static of link VM at power end VDD; design ESD device architecture as shown in Figure 4; so both can guarantee to discharge path at power end VDD to forming static between the link VM; can make again it form the series diode of two positively biased opposite directions; wherein the negative electrode of the first parasitic diode ESD_diode1 links to each other with power end VDD; the anode of the first parasitic diode ESD_diode1 links to each other with the anode of the second parasitic diode ESD_diode2; the negative electrode of the second parasitic diode ESD_diode2 links to each other with link VM; two diodes guarantee respectively normal working voltage; and the ability of the withstand voltage and anti-leak source of chip during the reversal connection charger, can save so external resistance R 2 to link VM in the application circuit such as the battery protecting circuit chip among Fig. 1.
Fig. 6 is the structural representation of the electrostatic protection device in an alternative embodiment of the invention.As shown in the figure; this electrostatic protection device comprises p type buried layer DP; be positioned at the N trap NWELL of p type buried layer DP top; be positioned at two P trap PWELL of p type buried layer top and clamping N trap NWELL; inject the P type injection region P_implant (or claiming the first injection region) that forms and the P type injection region P_implant (or claiming the second injection region) that injects formation on the top of N trap NWELL on the top of P trap PWELL; wherein the link VM of the battery protecting circuit chip among the P type injection region in the P trap and Fig. 1 links to each other, and the power end VDD of the battery protecting circuit chip among the P type injection region in the N trap and Fig. 1 links to each other.P_implant is that the degree of depth is more shallow but P type that concentration is higher injects.
Shown in Fig. 6 and 7, N trap NWELL has formed the first parasitic diode ESD_diode1 among Fig. 7 to P trap PWELL, and the P type injection region P_implant among the NWELL has formed second parasitic diode ESD_diode2 among Fig. 7 to N trap NWELL.
In conjunction with reference to shown in figure 1 and 7; discharge on the path to the static of link VM at power end VDD; design ESD device architecture as shown in Figure 6; so both can guarantee to discharge path at power end VDD to forming static between the link VM; can make again it form the series diode of two positively biased opposite directions; wherein the anode of the first parasitic diode ESD_diode1 links to each other with link VM; the negative electrode of the first parasitic diode ESD_diode1 links to each other with the negative electrode of the second parasitic diode ESD_diode2; the anode of the second parasitic diode ESD_diode2 links to each other with power end VDD; two diodes guarantee respectively normal working voltage; and the ability of the withstand voltage and anti-leak source of chip during the reversal connection charger, can save so external resistance R 2 to link VM in the application circuit such as the battery protecting circuit chip among Fig. 1.
Those of ordinary skill in the affiliated field can be understood that the electrostatic protection device among Fig. 4 and Fig. 6 can also be used for other integrated circuits or chip carry out electrostatic protection, and it can be connected between any two pins or link of chip.
Except the change of electrostatic protection device, the battery protecting circuit among the present invention also has other improvement, hereinafter will describe in detail.
Please refer to shown in Figure 1ly, the annexation of wherein each part etc. had all been described in background, no longer was repeated in this description here.When discharge, battery protecting circuit 110 judges whether the overcurrent that discharges by the pressure reduction between link VM (being the negative pole P-of battery) and the VSS (being the negative pole B-of battery battery core).This moment, the voltage of VM end was higher than the voltage that VSS holds, and pressure reduction between the two and discharging current proportion relation.If differential pressure surpasses predetermined voltage threshold, think that then discharging current surpasses predetermined current threshold, then start the discharge overcurrent protection function, with control of discharge end D
OUTBe pulled down to the negative pole B-current potential of battery battery core, forbid that described discharge power switch 120 discharges.When the reason of discharge overcurrent is eliminated, wish that described battery protecting circuit 110 can detect automatically, and automatically from the discharge over-current state, recover.
In the present invention; as shown in Figure 8; comprise control circuit in the described battery protecting circuit 110 and be arranged at link VM and link VSS between discharge path, described discharge path comprises resistance R 0, diode D0 and the switching device MN0 that is connected in successively between link VM and the link VSS.Described control circuit judges whether the overcurrent that discharges according to the pressure reduction between link VM (being the negative pole P-of battery) and the VSS (being the negative pole B-of battery battery core); when detecting the discharge overcurrent; forbid 120 discharges of discharge power switch; so just entered discharge overcurrent protection state; meanwhile; it also controls described switching device MN0 conducting, like this so that the discharge path conducting between link VM and the link VSS.
In discharge during overcurrent protection, the load meeting between the both positive and negative polarity P+/P-of battery is drawn high current potential near anodal P+ to negative pole P-voltage, and the voltage held of VM can be higher than the voltage that VSS holds like this.And in the present invention; be provided with the path between link VM and VSS of a conducting under the discharge over-current state; like this under the discharge prevention state; link VSS provides a pull-down current to link VM; in case the reason of discharge overcurrent is eliminated; eliminate such as short circuit, the voltage of link VM will be dragged down.Therefore, described control circuit determines whether to withdraw from discharge overcurrent protection state according to the voltage of link VM in the present invention.When if the voltage of link VM is lower than predetermined voltage threshold under the discharge over-current state, described control circuit then determines to withdraw from discharge overcurrent protection state, controls described discharge power switch 120 and recovers regular picture, otherwise continue to keep discharge overcurrent protection state.After described control circuit 210 determines to withdraw from discharge overcurrent protection state, control described switching device MN0 cut-off, like this so that the cut-off of the discharge path between link VM and the link VSS, and prevent from leaking electricity.
In order to reduce power consumption, under discharge overcurrent protection state, the pull-down current that flows to link VSS from link VM is very little, is milliampere and following other electric current of level, the size that can regulate by the size that resistance R 0 is set in the present invention described pull-down current.
The negative electrode of described diode D0 connects the link of described switching device MN0, and described anode links to each other with link VM, and another link of described switching device MN0 links to each other with link VSS.
In one embodiment, as shown in Figure 2, described switching device MN0 is nmos fet, and its grid connects described control circuit, and described control circuit output control signal S1 controls conducting and the cut-off of described switching device MN0.When entering discharge overcurrent protection state, control switch device MN0 conducting, when withdrawing from the discharge over-current state, control switch device MN0 cut-off.Diode D0 is used for allowing link VM unidirectional by electric current to link VSS, stops VSS to leak electricity to VM, and utilizes the reverse voltage endurance capability of diode D0 to bear VM to most pressure drops of VSS when VM voltage is lower than VSS.Resistance R 0 also can be positioned between MN0 and the diode D0, can also be positioned between MN0 and the VSS.
In the present invention, the word that the expression such as " connection ", " linking to each other ", " company ", " connecing " is electrically connected if no special instructions, then represents direct or indirect electric connection.
It is pointed out that and be familiar with the scope that any change that the person skilled in art does the specific embodiment of the present invention does not all break away from claims of the present invention.Correspondingly, the scope of claim of the present invention also is not limited only to previous embodiment.
Claims (10)
1. the electrostatic discharge protective circuit of an integrated circuit; described integrated circuit has the first link and the second link; it is characterized in that; described electrostatic discharge protective circuit comprises the electrostatic protection device that is connected in the first link and the second link; this electrostatic protection device comprises buried regions, be positioned at the buried regions top the P trap, be positioned at buried regions top and the N trap adjacent with the P trap, inject the first injection region of forming on the top of P trap and inject the second injection region that forms on the top of N trap
Wherein the first injection region links to each other with the first link, and the second injection region links to each other with the second link.
2. electrostatic discharge protective circuit according to claim 1; it is characterized in that; buried regions is N-type; the first injection region and the second injection region are N-type; described N trap is two; two N traps are clipped in the middle the P trap, and the top of each N trap is formed with the second injection region, and the N-type doping content of N-type injection region is high than the N-type doping content of N trap.
3. electrostatic discharge protective circuit according to claim 2 is characterized in that, when between the first link and the second link static being arranged, described electrostatic protection device provides the electrostatic leakage path between the first link and the second link,
This electrostatic protection device forms the first parasitic diode and the second parasitic diode; wherein the negative electrode of the first parasitic diode links to each other with the second link; the anode of the first parasitic diode links to each other with the anode of the second parasitic diode, and the negative electrode of the second parasitic diode links to each other with the first link.
4. electrostatic discharge protective circuit according to claim 1 is characterized in that, buried regions is the P type, and the first injection region and the second injection region are the P type, and described P trap is two, and two P traps are clipped in the middle the N trap,
The top of each P trap is formed with the first injection region, and the P type doping content of P type injection region is high than the P type doping content of P trap.
5. electrostatic discharge protective circuit according to claim 4 is characterized in that, when between the first link and the second link static being arranged, described electrostatic protection device provides the electrostatic leakage path between the first link and the second link,
This electrostatic protection device forms the first parasitic diode and the second parasitic diode; wherein the anode of the first parasitic diode links to each other with the first link; the negative electrode of the first parasitic diode links to each other with the negative electrode of the second parasitic diode, and the anode of the second parasitic diode links to each other with the second link.
6. battery protecting circuit; the charging control end that the control of discharge end that it comprises the battery cathode link VM that is connected with battery cathode, the battery battery core negative pole link VSS, the power end VDD that are connected with the battery battery core negative pole, be connected with the control end of discharge power switch is connected with the control end with the charge power switch
It is characterized in that, its also comprise be connected between battery cathode link VM and the power end VDD such as the arbitrary described electrostatic protection device of claim 1-5, wherein said battery cathode link VM is the first link, described power end VDD is the second link.
7. battery protecting circuit according to claim 6; it is characterized in that; its also comprise control circuit and be connected on battery cathode link VM and battery battery core negative pole link VSS between discharge path, comprise switching device, diode and resistance R 0 on this discharge path
After entering discharge overcurrent protection state, described switching device conducting controlled by described control circuit so that the discharge path conducting between battery cathode link and the battery battery core negative pole link,
Described control circuit determines whether to withdraw from discharge overcurrent protection state according to the voltage of battery cathode link; after determining to withdraw from discharge overcurrent protection state, described switching device cut-off controlled by described control circuit so that the cut-off of the discharge path between battery cathode link and the battery battery core negative pole link.
8. battery protecting circuit according to claim 7; it is characterized in that; the negative electrode of described diode connects a link of described switching device; the anode of described diode links to each other with described battery cathode link; another link of described switching device links to each other with described battery battery core negative pole link, and described discharge path provides milliampere rank and following electric current.
9. battery protecting circuit according to claim 7; it is characterized in that; under discharge overcurrent protection state; when the voltage of described battery cathode link is lower than predetermined voltage threshold; described control circuit determines to withdraw from discharge overcurrent protection state, and described control circuit determines whether to enter discharge overcurrent protection state according to the pressure reduction between battery cathode link and the battery battery core negative pole link.
10. battery protecting circuit according to claim 7 is characterized in that, described switching device is nmos fet, and described control circuit outputs control signals to the grid of described nmos fet.
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| CN201210502023.3A CN103023005B (en) | 2012-11-30 | 2012-11-30 | Electrostatic protection circuit and battery protection circuit |
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| CN201210502023.3A CN103023005B (en) | 2012-11-30 | 2012-11-30 | Electrostatic protection circuit and battery protection circuit |
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| CN112532219A (en) * | 2020-11-27 | 2021-03-19 | 广州极飞科技有限公司 | Bidirectional current control method and circuit |
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| CN110048478A (en) * | 2019-04-22 | 2019-07-23 | 上海芯荃微电子科技有限公司 | There is the emergency power supply driving circuit of reverse connecting protection |
| CN110048478B (en) * | 2019-04-22 | 2024-05-17 | 上海芯荃微电子科技有限公司 | Emergency power supply driving circuit with reverse connection protection |
| CN112532219A (en) * | 2020-11-27 | 2021-03-19 | 广州极飞科技有限公司 | Bidirectional current control method and circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103023005B (en) | 2015-02-04 |
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Address after: 214028 10th Floor, Area A, 530 Building, Qingyuan Road, Taihu International Science Park, Wuxi New District, Jiangsu Province Patentee after: WUXI ZHONGGAN MICROELECTRONIC CO., LTD. Address before: 214028 10th Floor, Area A, 530 Building, Qingyuan Road, Taihu International Science Park, Wuxi New District, Jiangsu Province Patentee before: Wuxi Vimicro Co., Ltd. |