CN203193584U - Vibration elements, oscillators, oscillators and electronic equipment - Google Patents

Abstract

The utility model provides a vibrating element, a vibrator, an oscillator and an electronic device. Even if the lead-out electrode thicker than the excitation electrode is formed, the electrical connection can be reliably realized and the work can be performed reliably. The vibrating element includes: a vibrating part; a thick wall part, which is integrated with the vibrating part and thicker than the vibrating part; an excitation electrode, which is arranged on both main surfaces of the vibrating part, and consists of one or more conductive layers. and a lead electrode disposed on the thick portion, electrically connected to the excitation electrode, and composed of one or more conductive layers, and at least one layer of the excitation electrode and the lead electrode is the same layer.

Description

Vibration elements, oscillators, oscillators and electronic equipment

technical field

The utility model relates to a vibration element, a vibrator, an oscillator and electronic equipment.

Background technique

In recent years, an AT-cut quartz vibrator whose main vibration mode for excitation is thickness-shear vibration and has a cubic curve with good frequency-temperature characteristics has been used as a vibrating element of a small piezoelectric oscillator that oscillates at high frequency. Among various electronic devices, vibrators that can achieve further high frequency and miniaturization are still required. In order to increase the frequency of AT-cut quartz resonators, the thickness of the vibrating part of the vibrating element is generally thinned. However, as the thickness of the vibrating part becomes thinner, the excitation electrodes formed in the vibrating part also need to be thinner conductive layers.

However, there is a problem that on-resistance increases due to further thinning of the excitation conductive layer. In contrast, Patent Document 1 discloses that the vibrator is formed based on the optimum thickness ratio of the thickness of the quartz vibrating element of the vibrating part to the thickness of the excitation conductive layer, thereby reducing thermal deformation generated between the quartz and the conductive layer, Good frequency temperature characteristics can be obtained.

In addition, Patent Document 2 also discloses that, similarly to Patent Document 1, a vibrator is formed based on an appropriate thickness ratio of a quartz vibrating element in a vibrating portion to a conductive layer, thereby preventing frequency changes before and after reflow due to hysteresis and Changes in frequency-temperature characteristics. In addition, there is also disclosed a technique for improving the film thickness of the lead-out electrode by making the film thickness of the extraction electrode thicker than that of the excitation conductive layer when the on-resistance increases and the CI value increases due to thinning of the excitation conductive layer.

Patent Document 1: Japanese Unexamined Patent Publication No. H11-284484

Patent Document 2: Japanese Patent Laid-Open No. 2005-203858

However, as disclosed in the aforementioned Patent Documents 1 and 2, even if a vibrator with good frequency-temperature characteristics can be obtained by forming a thinner excitation electrode, the film thickness of the extraction electrode is thicker than that of the excitation electrode, which may cause the excitation electrode to become thinner. The electrical connection to the extraction electrode is unstable.

Utility model content

Therefore, the present invention provides a vibrating element and a vibrator that can be reliably electrically connected even if an extraction electrode having a film thickness thicker than that of an excitation electrode is formed, and provides an oscillator and an electronic device that operate reliably.

In order to solve at least one of the above-mentioned problems, the present invention can be realized as the following forms or application examples.

[Application example 1] The vibrating element of this application example has: a substrate including a vibrating part and a thick-walled part integrated with the vibrating part and thicker than the vibrating part; and an excitation electrode provided on the vibrating part. and a lead electrode, which is connected to the excitation electrode and arranged on the vibrating part and the thick-walled part. The vibration element is characterized in that the lead electrode includes: a first conductive layer, which is connected to the The excitation electrodes are the same layer and extend from the excitation electrodes; and the second conductive layer is provided on the first conductive layer.

According to the vibration element of this application example, by forming at least one conductive layer between the lead electrodes and the excitation electrodes, the electrical connection between the lead electrodes and the excitation electrodes can be reliably maintained, and a vibration element with high operational reliability can be obtained.

[Application example 2] The vibration element according to application example 1, wherein the first conductive layer includes a first layer and a second layer laminated on the first layer.

According to the above-mentioned application example, in order to improve the vibration performance of the vibrator, the excitation electrode is formed extremely thin, but the ohmic loss, which is the loss due to the increased resistance due to thinning, increases. By forming the lead electrodes that do not act on vibration to be thicker than the excitation electrodes, ohmic loss can be reduced, thereby suppressing deterioration of the CI value.

[Application example 3] The vibration element according to application example 2, wherein the first layer contains Ni.

[Application example 4] The vibration element according to application example 2 or 3, wherein the second layer contains Au.

[Application example 5] The vibration element according to any one of application examples 1 to 3, wherein the second conductive layer contains Au.

[Application example 6] The vibrating element according to any one of application examples 1 to 3, wherein the thick-walled portion exposes at least a part of the outer edge of the vibrating portion including: a first region and a second region arranged across the vibrating portion; and a third region connected to one end of the first region and one end of the second region.

[Application example 7] The vibrating element according to application example 6, wherein the substrate is a quartz plate: the X axis as the electrical axis, the Y axis as the mechanical axis, and the optical axis as the crystal axes of the quartz. In the Z-axis of the axis, the X-axis is a rotation axis, and the axis after the Z-axis is tilted in a way that the +Z side rotates to the -Y direction of the Y-axis is the Z' axis, so that the Y-axis is The +Y side is tilted in such a way that the +Z direction of the Z axis is rotated that it is the Y' axis, and the surface including the X axis and the Z' axis is the main surface, along the direction of the Y' axis. for the thickness direction.

[Application example 8] The vibration element according to application example 7, wherein the first region and the second region are arranged along a direction intersecting the X axis, and the third region and the exposed The outer edge of the at least one part is arranged along a direction intersecting with the Z' axis.

[Application example 9] The vibrating element according to application example 8, wherein at least a part of the outer edge is arranged on the negative side of the Z' axis.

[Application Example 10] The vibrator of this application example is characterized in that the vibrator includes: the vibration element according to any one of application examples 1 to 3; and a package in which the vibration element is mounted.

According to the vibrator of this application example, the electrical connection between the lead electrode and the excitation electrode can be reliably maintained, and a vibrating element with high operational reliability can be obtained. In addition, the ohmic loss can be reduced, and a vibrator can be obtained that can suppress the deterioration of the CI value.

[Application Example 11] The oscillator of this application example is characterized in that the oscillator includes: the vibration element according to any one of application examples 1 to 3; and a circuit for driving the vibration element.

According to the oscillator of this application example, an oscillator with high reliability and stable performance can be obtained by using a oscillator that reliably maintains the electrical connection between the lead electrode and the excitation electrode, has high operational reliability, reduces ohmic loss, and suppresses degradation of the CI value. .

[Application Example 12] The electronic device of this application example is characterized in that the electronic device includes the vibrating element according to any one of Application Examples 1 to 3.

According to the electronic device of this application example, by using a vibrator that reliably maintains the electrical connection between the lead electrode and the excitation electrode, has high operational reliability, reduces ohmic loss, and suppresses deterioration of the CI value, it is possible to obtain an electronic device with high reliability and stable performance. .

Description of drawings

Fig. 1 (a) is a plan view showing the vibrating element of the first embodiment, Fig. 1 (b) is a sectional view of AA' portion shown in Fig. 1 (a), and Fig. 1 (c) is a sectional view of Fig. 1 ( a) Cross-sectional view of BB' section.

FIG. 2 is a perspective view illustrating the relationship between an AT-cut quartz substrate and crystal axes.

3 is an enlarged cross-sectional view illustrating the structure of a conductive layer of the resonator element according to the first embodiment.

FIG. 4 is a flowchart of manufacturing the vibrating element of the first embodiment.

5 is a schematic cross-sectional view and a schematic plan view showing the method of manufacturing the vibrating element according to the first embodiment.

6 is a schematic cross-sectional view and a schematic plan view showing the method of manufacturing the vibrating element according to the first embodiment.

Fig. 7(a) is a plan view showing a vibrator according to the third embodiment, and Fig. 7(b) is a cross-sectional view of part C-C' shown in Fig. 7(a).

Fig. 8(a) is a plan view showing an oscillator according to a fourth embodiment, and Fig. 8(b) is a cross-sectional view of part D-D' shown in Fig. 8(a).

FIG. 9 is a schematic diagram of an electronic device according to a fifth embodiment.

Label description

1 vibration element; 10 piezoelectric substrate; 20 electrodes.

Detailed ways

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(first embodiment)

Fig. 1 (a) is a plan view showing the vibrating element of the first embodiment, Fig. 1 (b) is a sectional view of AA' portion shown in Fig. 1 (a), and Fig. 1 (c) is a sectional view of Fig. 1 ( a) Cross-sectional view of BB' section. As shown in FIG. 1( a ), the vibration element 1 includes a piezoelectric substrate 10 formed of a piezoelectric material and electrodes 20 formed on both surfaces of the piezoelectric substrate 10 . The piezoelectric substrate 10 is provided with: a rectangular planar vibrating portion 11 formed in a thin plate shape; thick-walled part. As shown in Fig. 1 (b), one surface 11a (hereinafter referred to as the first vibration surface 11a) as the vibration main surface of the vibrating part 11 is not in contact with one surface 12a (hereinafter referred to as the first supporting surface) of the supporting part 12. 12a) is connected to the stepped surface 12b, and the vibrating part 11 is in the form of being recessed from the supporting part 12. However, the other surface 11b (hereinafter referred to as the second vibration surface 11b ) which is the main vibration surface of the vibrator 11 is formed on the same surface as the other surface 12c (hereinafter referred to as the second support surface 12c ) of the support unit 12 . superior.

The electrode 20 includes a first electrode 21 formed on the first vibration surface 11a and the first support surface 12a, and a second electrode 22 formed on the second vibration surface 11b and the second support surface 12c. The first electrode 21 includes: a first excitation electrode 21a formed on the first vibration surface 11a; a first lead electrode 21b connected to the first excitation electrode 21a and formed on the first vibration surface 11a, the stepped surface 12b and the first on the support surface 12a; and first pads 21c, which are connected to connection electrodes included in the package, are formed on the first support surface 12a. Similarly, the second electrode 22 includes: a second excitation electrode 22a formed on the second vibration surface 11b; a second lead electrode 22b connected to the second excitation electrode 22a and formed on the second vibration surface 11b and the second supporting surface. 12c; and the second pad 22c, which is connected to the connection electrode of the package, is formed on the second support surface 12c.

The vibration element 1 generates an electric field in the vibration part 11 between the first excitation electrode 21a and the second excitation electrode 22a according to the excitation current input from the first pad 21c and the second pad 22c, and vibrates by the piezoelectric effect. Section 11 vibrates. When the piezoelectric substrate 10 is formed using quartz, which is a piezoelectric material belonging to the trigonal crystal series, as shown in FIG. 2 , it has crystal axes X, Y, and Z that are perpendicular to each other. The X-axis is called the electrical axis, the Y-axis is called the mechanical axis, and the Z-axis is called the optical axis. A flat plate cut out along a plane obtained by rotating the XZ plane around the X-axis by a predetermined angle θ is used as the piezoelectric substrate 10 .

For example, in the case of an AT-cut quartz substrate, the angle θ is 35.25° (35° 15'). Here, when the Y axis and the Z axis are rotated around the X axis by an angle θ to become the Y' axis and the Z' axis, the AT-cut quartz substrate has vertical crystal axes X, Y', and Z'. Therefore, in an AT-cut quartz substrate, the thickness direction is the Y' axis, the surface including the X axis and the Z' axis perpendicular to the Y' axis is the main surface, and the thickness shear vibration is excited on the main surface as the main vibration. The piezoelectric substrate 10 is formed using the AT-cut quartz substrate thus formed. In addition, the piezoelectric substrate 10 of the present embodiment is not limited to the AT cut shown in FIG. 2 with an angle θ of 35.25°, and may be a piezoelectric substrate such as a BT cut that excites thickness-shear vibration, for example.

Here, the electrode 20 will be described using FIG. 3 . Fig. 3 is a partially enlarged view of the cross-sectional view shown in Fig. 1(b). As shown in FIG. 3 , first electrode 21 is formed by laminating first conductive layer 31 a , second conductive layer 31 b , and third conductive layer 31 c as conductive layers on first vibrating surface 11 a and first supporting surface 12 a . In addition, the second electrode 22 is formed by laminating a first conductive layer 32a, a second conductive layer 32b, and a third conductive layer 32c as conductive layers on the second vibrating surface 11b and the second supporting surface 12c (not shown).

A first conductive layer 31 a and a second conductive layer 31 b are laminated on the surface of the first vibration surface 11 a of the vibrator 11 as the first excitation electrode 21 a of the first electrode 21 . For example, nickel (Ni), which has good adhesion to quartz of the piezoelectric substrate 10, is used as a base layer to form a first conductive layer 31a, and gold (Au) is used as a conductive film on the surface layer of the first conductive layer 31a. The second conductive layer 31b is formed into a film. In addition, the first conductive layer 31a, the second conductive layer 31b, and the third conductive layer 31c are laminated on the first support surface 12a, the stepped surface 12b, and the first vibrating surface 11a of the support portion 12 as the first lead of the first electrode 21. Electrode 21b. A gold film is formed as a conductive film to form the third conductive layer 31c.

The first excitation electrode 21a and the first lead electrode 21b have a first conductive layer 31a and a second conductive layer 31b as a common conductive layer. In order to make the first lead electrode 21b thicker, the first lead electrode 21b is formed on the common electrode. The third conductive layer 31c is stacked on the second conductive layer 31b. By forming the first electrode 21 in this way, the first excitation electrode 21a is formed extremely thin in order to improve the vibration performance of the vibrator 11, but in order to reduce the loss caused by the increased resistance due to thinning, that is, the ohmic loss, the first lead wire The electrode 21b is formed thicker than the first excitation electrode 21a. Thereby, deterioration of the CI value can be suppressed. In addition, by making the first conductive layer 31a and the second conductive layer 31b the same layer as the common electrode of the first excitation electrode 21a and the first lead electrode 21b, the first lead electrode 21b and the first excitation electrode 21b can be reliably performed. By electrically connecting the electrodes 21a, the vibrating element 1 with high reliability can be obtained.

Similarly, in the second electrode 22 formed on the second vibration surface 11b and the second support surface 12c, the first conductive layer 32a and the second conductive layer 32b are laminated on the surface of the second vibration surface 11b as the second excitation. In the electrode 22a, a first conductive layer 32a, a second conductive layer 32b, and a third conductive layer 32c are laminated on the second supporting surface 12c and the second vibrating surface 11b as the second lead electrode 22b. Also in the second electrode 22, in order to improve the vibration performance of the vibrating part 11, the second excitation electrode 22a is formed extremely thin, but in order to reduce the loss caused by the increased resistance due to thinning, that is, the ohmic loss, the second lead electrode 22b is formed thicker than the film thickness of the second excitation electrode 22a. Thereby, deterioration of the CI value can be suppressed. In addition, the first conductive layer 32a and the second conductive layer 32b constitute the same layer of film as the common electrode of the second excitation electrode 22a and the second lead electrode 22b, so that the second lead electrode 22b and the second excitation electrode 22b can be reliably performed. The electrical connection of the electrodes 22a enables the vibration element 1 to be highly reliable.

In addition, in this embodiment, the structure of the electrode 20 in which three conductive layers of the first conductive layers 31a and 32a, the second conductive layers 31b and 32b, and the third conductive layers 31c and 32c are laminated has been described, but it is not limited thereto. . The thickness of the conductive layer of the first lead electrode 21b and the second lead electrode 22b may be at least thicker than the thickness of the conductive layer of the first excitation electrode 21a and the second excitation electrode 22a. Furthermore, among the one or more conductive layers constituting the first excitation electrode 21a and the second excitation electrode 22a and the one or more conductive layers constituting the first lead electrode 21b and the second lead electrode 22b, at least one or more The same layer of the conductive layer is not limited to the number of layers.

(second embodiment)

As a second embodiment, an embodiment of a method of forming the electrodes 20 on the piezoelectric substrate 10 of the vibrating element 1 according to the first embodiment will be described. FIG. 4 is a flowchart showing a method of forming the electrodes 20 on the piezoelectric substrate 10 according to the second embodiment. In addition, FIGS. 5 and 6 are schematic sectional views and schematic plan views in the A-A' portion shown in FIG. 1 , showing the manufacturing method of the vibrating element 1.

[Piezoelectric substrate preparation process]

First, as shown in FIG. 5( a ), a piezoelectric substrate preparation step ( S1 ) of preparing a piezoelectric substrate 10 made of quartz is performed. In the piezoelectric substrate preparation step ( S1 ), the piezoelectric substrate 10 determined to be a good product after quality inspection such as inspection is cleaned, counted, mounted on a jig, etc., and then moved to the next first conductive layer film forming step.

[First conductive layer film formation process]

In the first conductive layer forming step (S2), as shown in FIG. Nickel (Ni), which has good adhesion to the quartz forming the piezoelectric substrate 10, is used as a film-forming material to form a film with a thickness of about 7 nm by sputtering, vapor deposition, or CVD. After film formation, it transfers to the next 2nd conductive layer film formation process. In addition, in the first conductive layer film forming step ( S2 ), the first conductive layers 31 a and 32 a may be formed on the illustrated side surface portion 10 a of the piezoelectric substrate 10 .

[Second conductive layer film formation process]

In the 2nd conductive layer film forming process (S3), as shown in FIG. On the surface of the conductive layer 31a, 32a. Gold (Au), which has good conductivity and corrosion resistance, is used as a film-forming material to form a film with a thickness of about 60 nm by sputtering, vapor deposition, or CVD. In addition, in the second conductive layer film forming step ( S3 ), the second conductive layers 31 b and 32 b may be formed on the illustrated side surface portion 10 a side of the piezoelectric substrate 10 .

[Mask formation process]

After forming the 2nd conductive layer 31b, 32b by the 2nd conductive layer film-forming process (S3), it transfers to a mask forming process (S4). In the mask forming step ( S4 ), as shown in FIG. 5( d ), a mask 40 is formed so as to cover regions corresponding to the excitation electrodes 21 a and 22 a. The mask 40 is formed by the following method: for example, using a metal such as stainless steel or titanium to shape the mask 40 and fixing it on the surface of the second conductive layer 31b, 32b with an adhesive or the like; A method of forming a heat-resistant resin material into the shape of the mask 40 on the surface of the mask 32b. A mask 40 is formed, and the process proceeds to a third conductive layer film forming step.

[Third Conductive Layer Film Formation Process]

In the third conductive layer film forming step (S5), as shown in FIG. The third conductive layers 31c and 32c are formed on top. In the third conductive layers 31c and 32c, gold is formed as a conductive film with a thickness of about 200 nm by sputtering, vapor deposition, or CVD. Accordingly, the lead electrodes 21b, 22b formed by a method described later can be formed thicker than the excitation electrodes 21a, 22a.

After the 3rd conductive layers 31c, 32c are formed on the part including the surface of the mask 40, as shown in FIG. 6(f), the mask 40 is separated from the 2nd conductive layers 31b, 32b. Parts of the conductive layers 31d and 32d of the third conductive layers 31c and 32c formed on the surface of the mold 40 are also removed together, and the second conductive layers 31b and 32b are exposed in this region. Then, next, it transfers to an etching mask formation process.

[Etching mask formation process]

In the etching mask process ( S6 ), as shown in FIG. 6( g ), a resist is formed into an etching pattern by so-called photolithography to form an etching mask 50 . That is, the etching mask 50 is formed in a region shape corresponding to the electrode 20 . After forming the etching mask 50, it transfers to an electrode etching process.

[Electrode etching process]

In the electrode etching step (S7), by dipping in an etchant that can remove Ni and Au forming the conductive layer, as shown in FIG. 6(h), the conductive layer not covered by the etching mask 50 is removed from the piezoelectric substrate 10. layer. Then, the vibration element 1 shown in FIG. 1 or FIG. 3 is formed by removing the etching mask 50 .

In the vibrating element 1 formed by the above manufacturing method, the first conductive layers 31a, 32a and the second conductive layers 31b, 32b are formed in the same layer in the excitation electrodes 21a, 22a and the lead electrodes 21b, 22b, thereby reliably maintaining electrical connection, and the film thickness of the lead electrodes 21b and 22b can be formed thick. Thus, the vibrating element 1 capable of reducing ohmic loss and suppressing deterioration of the CI value can be obtained.

(third embodiment)

As a third embodiment, a vibrator including the resonator element 1 of the first embodiment will be described. Fig. 7(a) is a plan view showing vibrator 100 according to the third embodiment without a cover member, and Fig. 7(b) is a cross-sectional view of part C-C' shown in Fig. 7(a). As shown in FIG. 7( a ) and FIG. 7( b ), the vibrator 100 is configured to accommodate the vibrating element 1 in an airtight manner inside the package 400 formed by the package main body 200 and the cover member 300. The package main body 200 Formed in a rectangular box shape, the cover member 300 is formed of metal, ceramics, glass, or the like.

As shown in FIG. 7( b ), the package main body 200 stacks and airtightly fixes a first substrate 210 , a second substrate 220 , and a third substrate 230 formed in a frame shape. Each mounting terminal 250 is provided, and the sealing member 240 is formed on the upper end surface 230 a of the third substrate 230 . A concave portion 200 a (hereinafter, referred to as a cavity 200 a ) for accommodating the vibrating element 1 is formed by the third substrate 230 and the second substrate 220 . Also, mounting pads 270 and electrode terminals 280 electrically connected to pads 21c and 22c of the resonator element 1 described later are formed on the mounting surface 220a on which the resonator element 1 is placed on the second substrate 220 . These mounting pads 270 and electrode terminals 280 are electrically connected to the mounting terminals 250 via internal wiring formed inside the package body 200 . Furthermore, when the resonator element 1 is placed in the cavity 200a, the mounting pad 270 is formed in a region corresponding to the first pad 21c formed on the first supporting surface 12a.

In the cavity 200 a of the package main body 200 , the vibration element 1 is mounted such that the first excitation electrode 21 a faces the mounting surface 220 a of the second substrate 220 . Then, the conductive adhesive 500 is applied and cured between the first pad 21c of the vibration element 1 and the mounting pad 270 formed on the mounting surface 220a of the second substrate 220, whereby the vibration element 1 It is fixed to the package body 200, and the second pad 22c formed on the second supporting surface 12c of the vibrating element 1 and the electrode terminal 280 formed on the mounting surface 220a of the second substrate 220 are electrically connected by the bonding wire BW. . In this way, the resonator element 1 is placed and fixed in the cavity 200 a , and the cover member 300 is airtightly fixed by the sealing material 240 included in the third substrate 230 , whereby the vibrator 100 is obtained.

In the vibrator 100 of the third embodiment, although the part supporting and fixing the vibrating element 1 is one point of the first pad 21c, by forming a through-groove between the part where the first pad 21c is formed and the vibrating part 11, 13 (see FIG. 1 ), the stress generated in the piezoelectric substrate 10 due to the conductive adhesive 500 can be relaxed, so that the vibrator 100 with good frequency reproducibility, frequency temperature characteristics, CI temperature characteristics, and frequency aging characteristics can be obtained.

(fourth embodiment)

Regarding the fourth embodiment, an oscillator as an electronic device including the vibrating element 1 of the first embodiment will be described. Fig. 8(a) is a plan view showing an oscillator 1000 according to the third embodiment without a cover member, and Fig. 8(b) is a cross-sectional view of part D-D' shown in Fig. 8(a). As shown in FIG. 8(a) and FIG. 8(b), the oscillator 1000 is provided with a vibrating element 1, a semiconductor device 1410, and an electronic component 1420 in a package 1300 formed by a package body 1100 and a cover member 1200. The semiconductor device 1410 includes an oscillation circuit that excites the vibrating element 1 , and the electronic component 1420 is at least one of a variable capacitance element whose capacitance changes according to voltage, a thermistor whose resistance value changes according to temperature, and an inductor.

As shown in FIG. 8( b ), the package main body 1100 is formed by laminating a first substrate 1110 , a second substrate 1120 , and a third substrate 1130 . A plurality of mounting terminals 1150 are formed on the outer surface 1110 b of the first substrate 1110 . The second substrate 1120 and the third substrate 1130 are formed in a frame shape with the central part removed, and by stacking the first substrate 1110, the second substrate 1120, and the third substrate 1130, the resonator element 1, the semiconductor device 1410, and the electronic component 1420 are formed. etc. recessed portion 1100a (hereinafter referred to as cavity 1100a). In addition, mounting pads 1170 and electrode terminals 1180 electrically connected to the pads 21 c and 22 c of the vibration element 1 are formed on the mounting surface 1120 a of the second substrate 1120 on which the vibration element 1 is placed. These mounting pads 1170 and electrode terminals 1180 are electrically connected to the semiconductor device 1410 or the electronic component 1420 through internal wiring formed inside the package body 1100 . Furthermore, when the resonator element 1 is placed in the cavity 1100a, the mounting pad 1170 is formed in a region corresponding to the first pad 21c formed on the first support surface 12a.

Since the fixation of the vibrator element 1 to the second substrate 1120 is the same as that of the above-mentioned third embodiment, description thereof will be omitted. The semiconductor device 1410 is fixed to a predetermined position on the electronic component mounting surface 1110a of the first substrate 1110 with an adhesive or the like, and the terminals of the semiconductor device 1410 and the electrode terminals 1430 provided on the electronic component mounting surface 1110a are electrically connected by bonding wires BW. connect. In addition, the electronic component 1420 is connected and fixed by metal bumps or the like formed at predetermined fixing positions on the electronic component mounting surface 1110a. The electrode terminals 1430 are connected to the plurality of mounting terminals 1150 formed on the outer surface 1110 b of the first substrate 1110 via the internal wiring 1160 of the first substrate 1110 .

The vibration element 1 , the semiconductor device 1410 , and the electronic component 1420 are connected and fixed in the cavity 1100 a, and the package body 1100 is hermetically sealed by the lid member 1200 , whereby the oscillator 1000 is obtained.

As the fourth embodiment, as described above, the oscillator 1000 including the resonator element 1 , the semiconductor device 1410 including an oscillation circuit, and the electronic component 1420 inside the package 1300 has been described, but the present invention is not limited thereto. For example, COB (Chip On Board: chip on board) technology can also be applied to mount the vibrating element 1, the semiconductor device 1410 including the oscillation circuit, and the electronic component 1420 in a bare state on a printed circuit board of an electronic device, and then, to The chip is molded or capped to form the oscillator. Alternatively, one electrode may be used to support and electrically connect the vibrating element 1 at a single point via a bonding material on the printed circuit board, and the other electrode may be wire-connected.

(fifth embodiment)

FIG. 9 is a schematic configuration diagram showing an example of electronic equipment. Electronic device 2000 includes vibrator 100 of the third embodiment. Examples of the electronic device 2000 include transmission devices and the like. In the electronic device 2000, the vibrator 100 is used as a reference signal source or a voltage variable oscillator (VCXO), and the electronic device 2000 can be small in size and excellent in characteristics.

Claims (12)

1. vibrating elements, it has:

Substrate, it comprises the vibration section and heavy section integrated with described vibration section and that thickness is thicker than described vibration section;

Exciting electrode, it is arranged on the described vibration section; And

The lead-in wire electrode, it is connected with described exciting electrode, and is arranged on described vibration section and the described heavy section,

This vibrating elements is characterised in that described lead-in wire electrode comprises:

The 1st conductive layer, itself and described exciting electrode are same one deck, and from described exciting electrode extension; And

The 2nd conductive layer, it is arranged on described the 1st conductive layer.

2. vibrating elements according to claim 1 is characterized in that,

Described the 1st conductive layer comprises the 1st layer and be layered on described the 1st layer the 2nd layer.

3. vibrating elements according to claim 2 is characterized in that,

Described the 1st layer contains Ni.

4. according to claim 2 or 3 described vibrating elements, it is characterized in that,

Described the 2nd layer contains Au.

5. according to any described vibrating elements in the claim 1 to 3, it is characterized in that,

Described the 2nd conductive layer contains Au.

6. according to any described vibrating elements in the claim 1 to 3, it is characterized in that,

Described heavy section so that the mode that at least a portion of the outer rim of described vibration section is exposed comprise: clip described vibration section when overlooking and dispose the 1st the zone and the 2nd zone; And the 3rd zone, it is connected with an end in described the 1st zone and an end in described the 2nd zone.

7. vibrating elements according to claim 6 is characterized in that,

Described substrate is such quartz plate:

The crystallographic axis of quartz namely as the X-axis of electric axle, Y-axis and the Z axle as optic axis as mechanical axis in, described X-axis is rotating shaft, make described Z axle with the+described Y-axis of Z side direction-axle after the mode of Y-direction rotation tilts is Z ' axle, make described Y-axis with the+described Z axle of Y side direction+axle after the mode of Z direction rotation tilts is Y ' axle

The face that comprises described X-axis and described Z ' axle is interarea,

Direction along described Y ' axle is thickness direction.

8. vibrating elements according to claim 7 is characterized in that,

Described the 1st zone and described the 2nd zone dispose along the direction of intersecting with described X-axis,

The outer rim of described the 3rd zone and described at least a portion of exposing disposes along the direction of intersecting with described Z ' axle.

9. vibrating elements according to claim 8 is characterized in that,

The outer rim of described at least a portion is configured in the minus side of described Z ' axle.

10. an oscillator is characterized in that, this oscillator possesses:

Any described vibrating elements in the claim 1 to 3; And

The encapsulation of described vibrating elements is installed.

11. an oscillator is characterized in that,

This oscillator possesses:

Any described vibrating elements in the claim 1 to 3; And

Drive the circuit of described vibrating elements.

12. an electronic equipment is characterized in that,

This electronic equipment possesses any described vibrating elements in the claim 1 to 3.

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