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JP5446941B2 - Piezoelectric vibrating piece - Google Patents

Piezoelectric vibrating piece Download PDF

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JP5446941B2
JP5446941B2 JP2010018753A JP2010018753A JP5446941B2 JP 5446941 B2 JP5446941 B2 JP 5446941B2 JP 2010018753 A JP2010018753 A JP 2010018753A JP 2010018753 A JP2010018753 A JP 2010018753A JP 5446941 B2 JP5446941 B2 JP 5446941B2
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electrode
electrodes
excitation
sleeve
vibrating piece
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JP2011160094A (en
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伸一 小山
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Daishinku Corp
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Description

本発明は、圧電振動片に関する。   The present invention relates to a piezoelectric vibrating piece.

現在、ATカット水晶振動片などの厚み振動系の圧電振動片を用いた圧電振動子では、発振周波数の高周波化が進められている。この圧電振動子に用いる圧電振動片は、発振周波数の高周波化に対応させるために、その振動領域が薄肉成形された逆メサ構造となり、薄肉成形された振動領域の両主面に薄膜の一対の励振電極が形成されている(例えば、特許文献1参照)。   At present, in a piezoelectric vibrator using a thickness vibration type piezoelectric vibrating piece such as an AT-cut quartz vibrating piece, the oscillation frequency is being increased. The piezoelectric vibrating piece used in this piezoelectric vibrator has an inverted mesa structure in which the vibration region is thinly molded in order to correspond to the increase in the oscillation frequency, and a pair of thin films is formed on both main surfaces of the thinly formed vibration region. Excitation electrodes are formed (see, for example, Patent Document 1).

特許文献1に記載された圧電振動片では、基板の両主面に、励振を行う一対の励振電極と、外部端子と電気的に接続するための保持電極と、前記一対の励振電極を前記保持電極に引き出す袖電極とが形成されている。これら一対の励振電極と保持電極と袖電極とは、同時に形成され、同じ厚さの薄膜となっている。   In the piezoelectric vibrating piece described in Patent Document 1, a pair of excitation electrodes for excitation, a holding electrode for electrically connecting to an external terminal, and the pair of excitation electrodes are held on both main surfaces of the substrate. A sleeve electrode to be drawn out to the electrode is formed. The pair of excitation electrodes, holding electrodes, and sleeve electrodes are formed at the same time to form a thin film having the same thickness.

特開2009−164824号公報JP 2009-164824 A

上記の特許文献1に示すような圧電振動片は、逆メサ構造となっているため、その両主面に凹凸が成形されている。そのため、凹凸の段差部分などに形成された電極(励振電極、保持電極、袖電極)は、段差部分のエッジで断線する可能性がある。特に、高周波化に対応させた薄膜の電極の場合、段差部分のエッジで断線する可能性が高くなる。   Since the piezoelectric vibrating reed as shown in Patent Document 1 has an inverted mesa structure, unevenness is formed on both main surfaces thereof. Therefore, the electrodes (excitation electrode, holding electrode, sleeve electrode) formed on the uneven step portion or the like may be disconnected at the edge of the step portion. In particular, in the case of a thin film electrode adapted to high frequency, the possibility of disconnection at the edge of the stepped portion becomes high.

また、圧電振動片の他の不具合として、主振動以外に別の振動モードに起因するスプリアス振動の発生が挙げられる。このスプリアス振動は、高周波になるにつれて顕在化し、特に、励振領域の厚みが薄く成形された特許文献1に示す圧電振動片においてその影響が及び易い。   Another problem with the piezoelectric vibrating piece is the occurrence of spurious vibration due to another vibration mode in addition to the main vibration. This spurious vibration becomes apparent as the frequency becomes high, and the influence is easily exerted particularly in the piezoelectric vibrating piece shown in Patent Document 1 in which the thickness of the excitation region is thin.

そこで、上記課題を解決するために、本発明は、電極の断線を防止するとともに、スプリアス振動を抑制する圧電振動片を提供することを目的とする。   Accordingly, in order to solve the above-described problems, an object of the present invention is to provide a piezoelectric vibrating piece that prevents disconnection of an electrode and suppresses spurious vibration.

上記の目的を達成するため、本発明にかかる圧電振動片は、基板に、励振を行う複数の励振電極と、外部電極と電気的に接続する保持電極と、前記励振電極を前記保持電極に引き出す袖電極とが形成され、前記励振電極は、前記袖電極よりも薄く、複数の前記励振電極は、前記基板の両主面に形成され、前記基板の両主面に形成された複数の前記励振電極により電極領域が構成され、前記電極領域は、前記励振電極が対向する対向電極部と、前記励振電極が対向しない無対向電極部と、から構成され、前記対向電極部の周囲に、前記対向電極部に連なって前記無対向電極部が配されたことを特徴とする。   In order to achieve the above object, a piezoelectric vibrating piece according to the present invention includes a substrate, a plurality of excitation electrodes that perform excitation, a holding electrode that is electrically connected to an external electrode, and the excitation electrode that is drawn out to the holding electrode. A sleeve electrode is formed; the excitation electrode is thinner than the sleeve electrode; the plurality of excitation electrodes are formed on both main surfaces of the substrate; and the plurality of excitation electrodes formed on both main surfaces of the substrate An electrode region is constituted by an electrode, and the electrode region includes a counter electrode part that the excitation electrode faces and a non-opposing electrode part that the excitation electrode does not face, and the counter electrode part is disposed around the counter electrode part. The non-opposing electrode portion is arranged continuously to the electrode portion.

本発明によれば、最も強い振動変位分布を有する主振動の発振を妨げるのを防止することが可能となる。また、前記励振電極の端部付近に振動変位分布を有するスプリアス振動(例えば厚み系の2次モードである(1,2,1)モードや(1,1,2)モード、あるいは厚み系の3次モードである(1,3,1)モードや(1,1,3)モードなど)について、前記無対向電極部が構成されるので、各スプリアスの振動変位に影響を及ぼしてスプリアス振動を抑制することが可能となる。また、高周波化に対応させるために前記励振電極を薄く設定することも可能であり、その上、前記袖電極を前記励振電極より厚くして、電極の断線を防止することが可能となり、また、スプリアス振動もより一層抑制することが可能となる。すなわち、本発明によれば、電極の断線の防止と、スプリアス振動の抑制とを同時に行うことが可能となる。   According to the present invention, it is possible to prevent the oscillation of the main vibration having the strongest vibration displacement distribution from being hindered. In addition, spurious vibrations having a vibration displacement distribution near the end of the excitation electrode (for example, (1,2,1) mode or (1,1,2) mode which is a secondary mode of thickness system, or 3 of thickness system). For the next mode (1,3,1) mode, (1,1,3) mode, etc.), the non-opposing electrode part is configured, so that the spurious vibration is suppressed by affecting the vibration displacement of each spurious. It becomes possible to do. In addition, it is possible to set the excitation electrode thin in order to cope with high frequency, and furthermore, it is possible to prevent the disconnection of the electrode by making the sleeve electrode thicker than the excitation electrode, Spurious vibration can be further suppressed. That is, according to the present invention, it is possible to simultaneously prevent electrode disconnection and suppress spurious vibration.

前記構成において、前記基板は、結晶性材料であり、前記励振電極は、略正方形に成形され、前記励振電極と前記袖電極との境界が平面視V字であってもよい。   The said structure WHEREIN: The said board | substrate is a crystalline material, the said excitation electrode is shape | molded by substantially square, The boundary of the said excitation electrode and the said sleeve electrode may be V shape in planar view.

この場合、直交する結晶軸方向に沿ってそれぞれ発生する各スプリアス振動を同時に抑制することが可能となる。   In this case, it is possible to simultaneously suppress the spurious vibrations respectively generated along the orthogonal crystal axis directions.

前記構成において、前記無対向電極部の厚みが、前記袖電極の厚みと同じであってもよい。   The said structure WHEREIN: The thickness of the said non-opposing electrode part may be the same as the thickness of the said sleeve electrode.

この場合、前記対向電極部において主として発振(励振)する主振動に影響を及ぼすことなく前記対向電極部の周囲に主振動に付随して発生しやすいスプリアスを抑制するのに好ましい。   In this case, it is preferable to suppress spurious vibrations that are likely to occur accompanying the main vibration around the counter electrode portion without affecting the main vibration that mainly oscillates (excites) in the counter electrode portion.

前記構成において、前記袖電極は、前記保持電極よりも薄くてもよい。   In the above configuration, the sleeve electrode may be thinner than the holding electrode.

この場合、スプリアス振動を抑制しながら、電極の断線を防止し、さらに外部電極との接合を安定させることが可能となる。   In this case, it is possible to prevent disconnection of the electrode while suppressing spurious vibration and to stabilize the bonding with the external electrode.

前記構成において、前記袖電極と前記保持電極は、前記基板上に蒸着膜が形成され、前記蒸着膜上にメッキ膜が形成されてなってもよい。   In the above configuration, the sleeve electrode and the holding electrode may be formed by forming a vapor deposition film on the substrate and forming a plating film on the vapor deposition film.

この場合、前記基板への前記保持電極の形成強度を高めながら、外部電極との接合強度を高めることが可能となり、さらに前記袖電極と前記保持電極とがメッキ膜により形成されるので、前記袖電極と前記保持電極との厚みを増すことが容易になり、断線防止とスプリアス振動の抑制とを同時に図ることが可能となる。   In this case, it is possible to increase the bonding strength with the external electrode while increasing the formation strength of the holding electrode on the substrate, and further, the sleeve electrode and the holding electrode are formed of a plating film. It becomes easy to increase the thickness of the electrode and the holding electrode, and it becomes possible to simultaneously prevent disconnection and suppress spurious vibration.

本発明にかかる圧電振動片によれば、電極の断線を防止するとともに、スプリアス振動を抑制することができる。   According to the piezoelectric vibrating piece according to the present invention, it is possible to prevent disconnection of the electrode and suppress spurious vibration.

図1は、本発明の実施の形態にかかる水晶振動子の内部空間を公開した概略側面図である。FIG. 1 is a schematic side view showing an internal space of a crystal resonator according to an embodiment of the present invention. 図2は、本発明の実施の形態にかかる水晶振動片の概略平面図である。FIG. 2 is a schematic plan view of the quartz crystal resonator element according to the embodiment of the present invention. 図3は、本発明の実施の形態にかかる、電極の構成を示した水晶振動片の概略断面図である。FIG. 3 is a schematic cross-sectional view of a crystal vibrating piece showing the configuration of an electrode according to an embodiment of the present invention. 図4は、本発明の実施の形態にかかる水晶振動片の共振波形データである。FIG. 4 shows resonance waveform data of the quartz crystal resonator element according to the embodiment of the present invention. 図5は、比較例にかかる水晶振動片の共振波形データである。FIG. 5 shows resonance waveform data of the quartz crystal resonator element according to the comparative example. 図6は、100MHz帯の高周波型水晶振動子の袖電極の厚みに対する主振動のCI値と、CI比とに関するグラフである。FIG. 6 is a graph relating to the CI value of the main vibration and the CI ratio with respect to the thickness of the sleeve electrode of the high-frequency crystal resonator in the 100 MHz band. 図7は、300MHz帯の高周波型水晶振動子の袖電極の厚みに対する主振動のCI値と、CI比とに関するグラフである。FIG. 7 is a graph regarding the CI value of the main vibration and the CI ratio with respect to the thickness of the sleeve electrode of the 300 MHz band high-frequency crystal resonator. 図8は、600MHz帯の高周波型水晶振動子の袖電極の厚みに対する主振動のCI値と、CI比とに関するグラフである。FIG. 8 is a graph relating to the CI value of the main vibration and the CI ratio with respect to the thickness of the sleeve electrode of the 600 MHz band high-frequency crystal resonator. 図9は、本発明の他の実施の形態にかかる水晶振動片の概略平面図である。FIG. 9 is a schematic plan view of a quartz crystal resonator element according to another embodiment of the present invention. 図10は、本発明の他の実施の形態にかかる水晶振動片の概略平面図である。FIG. 10 is a schematic plan view of a quartz crystal resonator element according to another embodiment of the present invention. 図11は、本発明の他の実施の形態にかかる水晶振動片の概略平面図である。FIG. 11 is a schematic plan view of a quartz crystal resonator element according to another embodiment of the present invention.

以下、本発明の実施の形態(以下、本実施の形態という)について図面を参照して説明する。なお、以下に示す本実施の形態では、圧電振動デバイスとして水晶振動子に本発明を適用した場合を示す。   Hereinafter, an embodiment of the present invention (hereinafter referred to as the present embodiment) will be described with reference to the drawings. In the present embodiment described below, a case where the present invention is applied to a crystal resonator as a piezoelectric vibration device is shown.

−水晶振動子1−
本実施の形態にかかる水晶振動子1は、100MHz以上の高周波型水晶振動子であり、図1に示すように、ATカット水晶からなる水晶振動片2(本発明でいう圧電振動片)と、この水晶振動片2を保持し、水晶振動片2を気密封止するための第1封止部材3と、第1封止部材3に保持した水晶振動片2を気密封止するための第2封止部材4と、が設けられている。
-Crystal resonator 1
A crystal resonator 1 according to the present embodiment is a high-frequency crystal resonator of 100 MHz or higher, and as shown in FIG. 1, a crystal vibrating piece 2 (a piezoelectric vibrating piece referred to in the present invention) made of an AT-cut crystal, A first sealing member 3 for holding the crystal vibrating piece 2 and hermetically sealing the crystal vibrating piece 2 and a second sealing member for hermetically sealing the crystal vibrating piece 2 held by the first sealing member 3. And a sealing member 4.

この水晶振動子1では、第1封止部材3と第2封止部材4とからパッケージが構成され、第1封止部材3と第2封止部材4とが、封止材5により接合されて、気密封止された内部空間11が形成される。この内部空間11では、水晶振動片2が、第1封止部材3に導電性バンプ6を用いてFCB法(Flip Chip Bonding)により電気機械的に超音波接合されている。なお、導電性バンプ6には、非流動性部材のメッキバンプが用いられている。この導電性バンプ6に保持電極83,84の一部を用いている。この場合、導電性バンプ6の形成工程を簡略化することができ、コストダウンを図ることができる。なお、本実施の形態では、導電性バンプ6に保持電極83,84の一部を用いているが、これに限定されるものではなく、後述するメッキ形成された保持電極83,84の上部に別途導電性バンプ6を形成してもよい。また、導電性バンプ6としてメッキバンプを用いているが、金属スタッドバンプなど他の導電性バンプを用いてもよい。   In this crystal unit 1, a package is constituted by the first sealing member 3 and the second sealing member 4, and the first sealing member 3 and the second sealing member 4 are joined by the sealing material 5. Thus, an airtightly sealed internal space 11 is formed. In the internal space 11, the quartz crystal resonator element 2 is ultrasonically bonded to the first sealing member 3 by electromechanical bonding using the conductive bumps 6 by the FCB method (Flip Chip Bonding). The conductive bump 6 is a plated bump made of a non-fluid member. Part of the holding electrodes 83 and 84 is used for the conductive bump 6. In this case, the process of forming the conductive bump 6 can be simplified, and the cost can be reduced. In this embodiment, a part of the holding electrodes 83 and 84 is used for the conductive bump 6. However, the present invention is not limited to this, and the upper part of the plating formed holding electrodes 83 and 84 described later is used. A conductive bump 6 may be formed separately. Further, although plated bumps are used as the conductive bumps 6, other conductive bumps such as metal stud bumps may be used.

次に、この水晶振動子1の各構成について、図1〜3を用いて説明する。   Next, each configuration of the crystal resonator 1 will be described with reference to FIGS.

−第1封止部材3−
第1封止部材3は、セラミックからなり、図1に示すように、底部31と、第1封止部材3の一主面32の主面外周に沿って底部31から上方に延出した壁部34と、から構成された箱状体に成形されている。この第1封止部材3は、セラミックの一枚板上にセラミックの直方体を積層して凹状に一体焼成してなる。
-1st sealing member 3-
The 1st sealing member 3 consists of ceramics, and as shown in FIG. 1, the wall extended upward from the bottom part 31 along the main part outer periphery of the bottom part 31 and the one main surface 32 of the 1st sealing member 3 A box-like body composed of the portion 34 is formed. The first sealing member 3 is formed by laminating a ceramic rectangular parallelepiped on a single ceramic plate and integrally firing it in a concave shape.

この第1封止部材3の壁部34の天面は、第2封止部材4との接合面とされ、接合面には、第2封止部材4と接合するために用いる封止材5の一部となる接合膜(図示省略)が形成されている。本実施の形態にかかる接合膜は、第1封止部材3の天面(第2封止部材4との接合面)にWやMoのメタライズ層が形成され、このメタライズ層の上にNiやAuのメッキ層が積層された薄膜からなる。   The top surface of the wall portion 34 of the first sealing member 3 is a bonding surface with the second sealing member 4, and the sealing material 5 used for bonding with the second sealing member 4 is used as the bonding surface. A bonding film (not shown) is formed. In the bonding film according to the present embodiment, a W or Mo metallization layer is formed on the top surface of the first sealing member 3 (the bonding surface with the second sealing member 4), and Ni or Ni is formed on the metallization layer. It consists of a thin film in which Au plating layers are laminated.

この第1封止部材3には、底部31と壁部34とによって囲まれたキャビティ35が形成され、このキャビティ35は、平面視略矩形状に形成されている。   The first sealing member 3 is formed with a cavity 35 surrounded by a bottom portion 31 and a wall portion 34, and the cavity 35 is formed in a substantially rectangular shape in plan view.

この第1封止部材3の筐体裏面(他主面33)の四隅には、キャスタレーション36が形成されている。これらキャスタレーション36は、筐体側面に形成され、第1封止部材3の他主面33の四隅に沿って形成されている。   Castellations 36 are formed at the four corners of the rear surface (other main surface 33) of the first sealing member 3. These castellations 36 are formed on the side surface of the housing and are formed along the four corners of the other main surface 33 of the first sealing member 3.

この第1封止部材3には、水晶振動片2の励振電極81,82それぞれと電気機械的に接合する電極パッド71,72と、外部部品や外部機器などと電気的に接続する外部端子電極73,74と、電極パッド71と外部端子電極73、および電極パッド72と外部端子電極74を電気的に接続させる配線パターン75とが、形成されている。これら電極パッド71,72と外部端子電極73,74と配線パターン75とにより第1封止部材3の電極7が構成される。電極パッド71,72は、第1封止部材3のキャビティ35の平面視で短辺方向に対向する隅部であって、第1封止部材3の長手方向の一端部に形成されている。外部端子電極73,74は、キャスタレーション36に形成されている。   The first sealing member 3 includes electrode pads 71 and 72 that are electromechanically bonded to the excitation electrodes 81 and 82 of the crystal vibrating piece 2 and external terminal electrodes that are electrically connected to external components and external devices. 73, 74, an electrode pad 71 and an external terminal electrode 73, and a wiring pattern 75 for electrically connecting the electrode pad 72 and the external terminal electrode 74 are formed. These electrode pads 71, 72, external terminal electrodes 73, 74, and wiring pattern 75 constitute the electrode 7 of the first sealing member 3. The electrode pads 71 and 72 are corners facing in the short side direction in a plan view of the cavity 35 of the first sealing member 3 and are formed at one end in the longitudinal direction of the first sealing member 3. The external terminal electrodes 73 and 74 are formed on the castellation 36.

この第1封止部材3には、水晶振動片2の励振電極81,82をキャビティ35内からキャビティ35外へ導通させるためのビア37が形成されている。このビア37を介して、配線パターン75が、第1封止部材3の一主面32の電極パッド71,72から他主面33の外部端子電極73,74にかけてパターン形成されている。また、ビア37の内部には、Cuから構成される導通部材76が充填されている。   The first sealing member 3 is formed with a via 37 for conducting the excitation electrodes 81 and 82 of the crystal vibrating piece 2 from the inside of the cavity 35 to the outside of the cavity 35. Via this via 37, a wiring pattern 75 is formed from the electrode pads 71, 72 on the one main surface 32 of the first sealing member 3 to the external terminal electrodes 73, 74 on the other main surface 33. The via 37 is filled with a conductive member 76 made of Cu.

−第2封止部材4−
第2封止部材4は、金属材料からなり、平面視矩形状の直方体の一枚板に成形されている。この第2封止部材4の下面の外周は、第1封止部材との接合面とされ、接合面には、第1封止部材3と接合するために用いる封止材5の一部となる接合膜(図示省略)が形成されている。本実施の形態にかかる接合膜は、第2封止部材4の下面(第1封止部材3との接合面)にAgローなどのろう材からなる。
-Second sealing member 4-
The 2nd sealing member 4 consists of metal materials, and is shape | molded by the single plate of a rectangular parallelepiped planar view. The outer periphery of the lower surface of the second sealing member 4 is a bonding surface with the first sealing member, and the bonding surface includes a part of the sealing material 5 used for bonding with the first sealing member 3. A bonding film (not shown) is formed. The bonding film according to the present embodiment is made of a brazing material such as Ag low on the lower surface of the second sealing member 4 (the bonding surface with the first sealing member 3).

−水晶振動片2−
水晶振動片2は、結晶性材料である厚みすべり振動を行うATカット水晶片の基板21からなる。水晶振動片2の外形は、図2,3に示すように、平面視略矩形状(両主面22,23が略矩形状に形成された)の直方体となっている。また、水晶振動片2は、両主面22,23の長辺がX軸に沿って、また、両主面22,23の短辺がZ’軸に沿って成形されている。
-Crystal vibrating piece 2-
The quartz crystal vibrating piece 2 is composed of an AT-cut quartz crystal substrate 21 that performs a thickness-shear vibration that is a crystalline material. As shown in FIGS. 2 and 3, the external shape of the quartz crystal vibrating piece 2 is a rectangular parallelepiped having a substantially rectangular shape in plan view (both main surfaces 22 and 23 are formed in a substantially rectangular shape). Further, the quartz crystal vibrating piece 2 is formed such that the long sides of both the main surfaces 22 and 23 are along the X axis and the short sides of the both main surfaces 22 and 23 are along the Z ′ axis.

この水晶振動片2には、振動領域を構成する振動部24と、外部電極である第1封止部材3の電極パッド71,72と電気機械的に接合する枠部25とが設けられている。枠部25は、振動部24を囲むように振動部24の外周に設けられ、振動部24と枠部25とが一体成形されて基板21が構成される。振動部24の両主面22,23はエッチング成形され、枠部25に対して薄肉化されている。   The quartz crystal resonator element 2 is provided with a vibrating portion 24 that constitutes a vibrating region, and a frame portion 25 that is electromechanically joined to the electrode pads 71 and 72 of the first sealing member 3 that is an external electrode. . The frame part 25 is provided on the outer periphery of the vibration part 24 so as to surround the vibration part 24, and the vibration part 24 and the frame part 25 are integrally formed to constitute the substrate 21. Both main surfaces 22 and 23 of the vibration part 24 are etched and thinned with respect to the frame part 25.

この水晶振動片2の基板21には、励振を行う一対の励振電極81,82と、第1封止部材3の電極パッド71,72と電気機械的に接合する保持電極83,84と、一対の励振電極81,82を保持電極83,84に引き出す袖電極85,86とが形成され、一対の励振電極81,82は、袖電極85,86により引出されて保持電極83,84にそれぞれ電気的に接続されている。また、一対の励振電極81,82は袖電極85,86よりも薄く、袖電極85,86は保持電極83,84よりも薄い。これら一対の励振電極81,82と保持電極83,84と袖電極85,86とにより水晶振動片2の電極8が構成される。   The substrate 21 of the crystal vibrating piece 2 has a pair of excitation electrodes 81 and 82 for exciting, holding electrodes 83 and 84 that are electromechanically joined to the electrode pads 71 and 72 of the first sealing member 3, and a pair. Sleeve electrodes 85 and 86 are formed to lead the excitation electrodes 81 and 82 to the holding electrodes 83 and 84, and the pair of excitation electrodes 81 and 82 are drawn by the sleeve electrodes 85 and 86 to be electrically connected to the holding electrodes 83 and 84, respectively. Connected. The pair of excitation electrodes 81 and 82 is thinner than the sleeve electrodes 85 and 86, and the sleeve electrodes 85 and 86 are thinner than the holding electrodes 83 and 84. The pair of excitation electrodes 81 and 82, the holding electrodes 83 and 84, and the sleeve electrodes 85 and 86 constitute the electrode 8 of the crystal vibrating piece 2.

一対の励振電極81,82は、図2,3に示すように、同形状であって同一面積の平面視略正方形状に成形され、基板21の両主面22,23の振動部24の平面視中央にそれぞれ形成されている。励振電極81は、各辺がX軸とZ’軸に沿って形成されている。励振電極82は、各辺がX軸とZ’軸とに沿わずに形成され、励振電極81,82の中心を中心点として励振電極81に対して平面視的に(主面22,23上において)20°〜70°の範囲で回転させた配置となっている。なお、本実施の形態では、励振電極82は励振電極81に対して45°に回転させた配置となっている。このように、励振電極82が励振電極81に対して回転させた配置となっている場合、平面視同形状の略正方形の一対の励振電極81,82の各隅部では、対向する励振電極81,82の電極領域が存在しないことになる。このように、一対の励振電極81,82の各隅部は、対向しない電極領域(下記する無対向電極部88参照)として構成されるので、励振電極81,82の端部付近に振動変位分布を有するスプリアス振動、例えば厚み系の2次モードである(1,2,1)モードや(1,1,2)モード、あるいは厚み系の3次モードである(1,3,1)モードや(1,1,3)モードなどについては、振動変位に影響して最も効率的に抑制される。   As shown in FIGS. 2 and 3, the pair of excitation electrodes 81 and 82 are formed in a substantially square shape in plan view having the same shape and the same area, and the planes of the vibrating portions 24 of both the main surfaces 22 and 23 of the substrate 21. Each is formed in the visual center. Each side of the excitation electrode 81 is formed along the X axis and the Z ′ axis. The excitation electrode 82 is formed so that each side does not extend along the X axis and the Z ′ axis, and the excitation electrode 81 is planarly viewed from the center of the excitation electrodes 81 and 82 (on the main surfaces 22 and 23). In the arrangement) rotated in the range of 20 ° to 70 °. In the present embodiment, the excitation electrode 82 is arranged to be rotated by 45 ° with respect to the excitation electrode 81. As described above, when the excitation electrode 82 is rotated with respect to the excitation electrode 81, the opposing excitation electrode 81 is provided at each corner of a pair of substantially square excitation electrodes 81, 82 having the same shape in plan view. , 82 does not exist. In this way, each corner of the pair of excitation electrodes 81 and 82 is configured as a non-opposing electrode region (see the non-opposing electrode portion 88 described below), so that vibration displacement distribution is provided near the ends of the excitation electrodes 81 and 82. For example, (1,2,1) mode or (1,1,2) mode which is a second-order mode of thickness, or (1,3,1) mode which is a third-order mode of thickness or The (1, 1, 3) mode and the like are most effectively suppressed by affecting the vibration displacement.

これら一対の励振電極81,82は、基板21上にCr,Auが順に蒸着形成されたCr−Au膜(蒸着膜)により構成される。一対の励振電極81,82の厚さ寸法は、それぞれ0.03μm〜0.08μmの範囲に設定され、本実施の形態では、一対の励振電極81,82の厚さ寸法は0.05μmである。なお、励振電極81,82の厚さ寸法は、0.03μm〜0.08μmの範囲内であれば異なる寸法であってもよい。   The pair of excitation electrodes 81 and 82 is composed of a Cr—Au film (vapor deposition film) in which Cr and Au are sequentially deposited on the substrate 21. The thickness dimension of the pair of excitation electrodes 81 and 82 is set in the range of 0.03 μm to 0.08 μm, respectively. In the present embodiment, the thickness dimension of the pair of excitation electrodes 81 and 82 is 0.05 μm. . The thickness dimensions of the excitation electrodes 81 and 82 may be different dimensions as long as they are within the range of 0.03 μm to 0.08 μm.

袖電極85,86は、振動部24の両主面22,23に対向せずにそれぞれ形成されている。これら袖電極85,86は、励振電極81,82を構成するCr−Au膜(蒸着膜)上に、さらにAuからなるAu膜(メッキ膜)がメッキ形成されたCr−Au膜により構成される。袖電極85,86の厚さ寸法は、それぞれ0.5μm〜4.0μmの範囲に設定され、本実施の形態では、袖電極85,86の厚さ寸法は1μmである。なお、袖電極85,86の厚さ寸法は、0.5μm〜4.0μmの範囲内であれば異なる寸法であってもよい。   The sleeve electrodes 85 and 86 are formed so as not to face both the main surfaces 22 and 23 of the vibration part 24. The sleeve electrodes 85 and 86 are constituted by a Cr—Au film in which an Au film (plating film) made of Au is further plated on the Cr—Au film (vapor deposition film) constituting the excitation electrodes 81 and 82. . The thickness dimension of the sleeve electrodes 85 and 86 is set in the range of 0.5 μm to 4.0 μm, respectively. In the present embodiment, the thickness dimension of the sleeve electrodes 85 and 86 is 1 μm. The sleeve electrodes 85 and 86 may have different thicknesses as long as they are within a range of 0.5 μm to 4.0 μm.

保持電極83,84は、振動部24から枠部25に亘って形成されている。これら保持電極83,84は、袖電極85,86を構成するCr−Au膜上に、さらにAuからなるAu膜(メッキ膜)がメッキ形成されたCr−Au膜により構成される。保持電極83,84の厚さ寸法は、それぞれ0.5μm〜10.0μmの範囲に設定され、本実施の形態では、保持電極83,84の厚さ寸法は2μmである。なお、保持電極83,84の厚さ寸法は、0.5μm〜10.0μmの範囲内であれば異なる寸法であってもよい。   The holding electrodes 83 and 84 are formed from the vibrating portion 24 to the frame portion 25. These holding electrodes 83 and 84 are made of a Cr—Au film in which an Au film (plating film) made of Au is plated on the Cr—Au film constituting the sleeve electrodes 85 and 86. The thickness dimension of the holding electrodes 83 and 84 is set in the range of 0.5 μm to 10.0 μm, respectively. In the present embodiment, the thickness dimension of the holding electrodes 83 and 84 is 2 μm. Note that the thickness dimensions of the holding electrodes 83 and 84 may be different as long as they are within the range of 0.5 μm to 10.0 μm.

上記の構成の電極8では、励振電極81,82が基板21の両主面22,23に形成され、基板21の両主面22,23に形成された励振電極81,82により電極領域が構成されている。電極領域は、励振電極81,82が対向する対向電極部87と、励振電極81,82が対向しない無対向電極部88と、から構成されている。ここでいう無対向電極部88は、対向電極部87の周囲に、対向電極部87に連なって(連続して)形成される。   In the electrode 8 having the above configuration, the excitation electrodes 81 and 82 are formed on both main surfaces 22 and 23 of the substrate 21, and the electrode region is configured by the excitation electrodes 81 and 82 formed on both the main surfaces 22 and 23 of the substrate 21. Has been. The electrode region is composed of a counter electrode part 87 facing the excitation electrodes 81 and 82 and a non-opposing electrode part 88 not facing the excitation electrodes 81 and 82. The non-opposing electrode portion 88 referred to here is formed continuously (continuously) around the counter electrode portion 87 with the counter electrode portion 87.

なお、一対の励振電極81,82の無対向電極部88と袖電極85,86との境界27は、振動部24に位置し、図2に示すようにX軸(水晶振動片2の長手方向)とZ’軸(水晶振動片2の短手方向)に沿って形成された平面視L字もしく平面視V字となる。また、袖電極85,86と保持電極83,84との境界28は、振動部24に位置し、図2に示すようにX軸(水晶振動片2の長手方向)とZ’軸(水晶振動片2の短手方向)に沿って形成された平面視L字となる。   Note that the boundary 27 between the non-opposing electrode portion 88 and the sleeve electrodes 85 and 86 of the pair of excitation electrodes 81 and 82 is located in the vibrating portion 24, and as shown in FIG. ) And the Z′-axis (the short direction of the quartz crystal vibrating piece 2), or a plan view L-shape or a plan view V-shape. Further, the boundary 28 between the sleeve electrodes 85 and 86 and the holding electrodes 83 and 84 is located in the vibration part 24, and as shown in FIG. 2, the X axis (longitudinal direction of the crystal vibrating piece 2) and the Z ′ axis (crystal vibration). It becomes an L-shape in plan view formed along the short direction of the piece 2.

−水晶振動子1の製造−
上記した構成からなる水晶振動子1では、図1〜3に示すように、第1封止部材3と水晶振動片2とは、導電性バンプ6を介してFCB法により電気機械的に超音波接合される。この接合により、水晶振動片2の励振電極81,82が、袖電極85,86、保持電極83,84、導電性バンプ6を介して第1封止部材3の電極パッド71,72に電気機械的に接合され、第1封止部材3に水晶振動片2が搭載される。そして、水晶振動片2が搭載された第1封止部材3に、第2封止部材4が、封止材5を介して溶接や加熱溶融などにより接合され、水晶振動片2を気密封止した水晶振動子1が製造される。
-Manufacture of crystal unit 1-
In the crystal unit 1 having the above-described configuration, as shown in FIGS. 1 to 3, the first sealing member 3 and the crystal vibrating piece 2 are ultrasonically electromechanically formed by the FCB method through the conductive bumps 6. Be joined. By this bonding, the excitation electrodes 81 and 82 of the crystal vibrating piece 2 are connected to the electrode pads 71 and 72 of the first sealing member 3 via the sleeve electrodes 85 and 86, the holding electrodes 83 and 84, and the conductive bumps 6. The crystal vibrating piece 2 is mounted on the first sealing member 3. And the 2nd sealing member 4 is joined to the 1st sealing member 3 in which the crystal vibrating piece 2 was mounted by welding, heat melting, etc. via the sealing material 5, and the crystal vibrating piece 2 is airtightly sealed. The manufactured quartz crystal resonator 1 is manufactured.

−共振波形−
次に、上記の本実施の形態にかかる水晶振動片2を搭載した水晶振動子1の共振波形を計測し、その共振波形データを図4に示す。なお、図4に示す水晶振動子2として、622MHz帯の高周波型水晶振動子を用いた。
-Resonance waveform-
Next, the resonance waveform of the crystal resonator 1 mounted with the crystal resonator element 2 according to the present embodiment is measured, and the resonance waveform data is shown in FIG. Note that a 622 MHz band high-frequency crystal resonator was used as the crystal resonator 2 shown in FIG.

また、本実施の形態の比較例として、本実施の形態にかかる水晶振動片2に対して、一対の励振電極81,82と保持電極83,84と袖電極85,86との構成が異なり、一対の励振電極81,82と保持電極83,84と袖電極85,86とが同じ厚さである水晶振動片を搭載した水晶振動子を用い、その共振波形データを図5に示す。   Further, as a comparative example of the present embodiment, the configuration of the pair of excitation electrodes 81 and 82, the holding electrodes 83 and 84, and the sleeve electrodes 85 and 86 is different from the crystal vibrating piece 2 according to the present embodiment. FIG. 5 shows the resonance waveform data of a crystal resonator on which a pair of excitation electrodes 81 and 82, holding electrodes 83 and 84, and sleeve electrodes 85 and 86 are mounted.

図4,5に示すように、共振波形データから、本実施の形態にかかる水晶振動子1は、比較例の水晶振動子に比べて、主振動の直列共振抵抗値(CI値)が低く、スプリアス振動(スプリアスCI)を抑制していることがわかる。   As shown in FIGS. 4 and 5, from the resonance waveform data, the crystal resonator 1 according to the present embodiment has a lower series resonance resistance value (CI value) of the main vibration than the crystal resonator of the comparative example, It can be seen that the spurious vibration (spurious CI) is suppressed.

−袖電極85,86−
また、上記の本実施の形態にかかる水晶振動片2を搭載した水晶振動子1について、袖電極85,86の厚みを可変させ(それぞれ0.5μm〜4.0μm)、その時の主振動のCI値と、スプリアスのCI値とを測定し、これらCI値の比(CI比)を算出した。その結果を、図6〜8に示す。
-Sleeve electrodes 85, 86-
In addition, for the crystal resonator 1 on which the crystal resonator element 2 according to the present embodiment is mounted, the thickness of the sleeve electrodes 85 and 86 is varied (each 0.5 μm to 4.0 μm), and the CI of the main vibration at that time The value and the spurious CI value were measured, and the ratio of these CI values (CI ratio) was calculated. The results are shown in FIGS.

図6は、100MHz帯の高周波型水晶振動子の袖電極85,86の厚みに対する、主振動のCI値と、CI比とに関するグラフである。   FIG. 6 is a graph relating to the CI value of the main vibration and the CI ratio with respect to the thickness of the sleeve electrodes 85 and 86 of the high-frequency crystal resonator of the 100 MHz band.

図7は、300MHz帯の高周波型水晶振動子の袖電極85,86の厚みに対する、主振動のCI値と、CI比とに関するグラフである。   FIG. 7 is a graph relating to the CI value of the main vibration and the CI ratio with respect to the thickness of the sleeve electrodes 85 and 86 of the 300 MHz band high-frequency crystal unit.

図8は、600MHz帯の高周波型水晶振動子の袖電極85,86の厚みに対する、主振動のCI値と、CI比とに関するグラフである。   FIG. 8 is a graph relating to the CI value of the main vibration and the CI ratio with respect to the thickness of the sleeve electrodes 85 and 86 of the 600 MHz band high-frequency crystal resonator.

図6〜8に示すように、袖電極85,86の厚みが増すにつれて、主振動のCI値が下がり、CI比が上がることが分かる。また、図6〜8から、発振周波数が高い方がCI値を抑制できることが分かる。また、図6〜8から、いずれの発振周波数であっても同様の特性となることが分かる。これらのことから、発振周波数を高く設定し、袖電極85,86を厚くして、主振動のCI値を抑えてCI比を上げることが望ましい。   As shown in FIGS. 6 to 8, it can be seen that as the thickness of the sleeve electrodes 85 and 86 increases, the CI value of the main vibration decreases and the CI ratio increases. Also, it can be seen from FIGS. 6 to 8 that the higher the oscillation frequency, the more CI value can be suppressed. Moreover, it turns out that it becomes the same characteristic even if it is any oscillation frequency from FIGS. For these reasons, it is desirable to increase the CI ratio by setting the oscillation frequency high, thickening the sleeve electrodes 85 and 86, and suppressing the CI value of the main vibration.

しかしながら、袖電極85,86を厚くすると、他の不具合が生じる。例えば、袖電極85,86を形成する際に基板21に応力がかかるが、この応力は袖電極85,86などの電極の厚みに関係する。具体的には、袖電極85,86を厚くすると、基板21に必要以上の応力がかかり、その結果、エージング特性などの水晶振動子1の特性を悪化させることになる。本実施の形態にかかる水晶振動片2では、袖電極85,86の厚さがそれぞれ4.0μmを超えると、エージング特性などの水晶振動子1の特性が悪化し始める。   However, when the sleeve electrodes 85 and 86 are thickened, other problems occur. For example, when the sleeve electrodes 85 and 86 are formed, a stress is applied to the substrate 21, and this stress is related to the thickness of the electrodes such as the sleeve electrodes 85 and 86. Specifically, when the sleeve electrodes 85 and 86 are thickened, a stress more than necessary is applied to the substrate 21, and as a result, the characteristics of the crystal unit 1 such as the aging characteristics are deteriorated. In the crystal resonator element 2 according to the present embodiment, when the thickness of the sleeve electrodes 85 and 86 exceeds 4.0 μm, the characteristics of the crystal unit 1 such as the aging characteristics start to deteriorate.

また、袖電極85,86の厚さをそれぞれ0.5μm未満にすると、主振動のCI値が上がり、CI比が下がるだけでなく、袖電極85,86が断線する可能性がある。   Further, if the thicknesses of the sleeve electrodes 85 and 86 are each less than 0.5 μm, not only the CI value of the main vibration is increased and the CI ratio is decreased, but also the sleeve electrodes 85 and 86 may be disconnected.

上記のことから、袖電極85,86の厚さは、それぞれ0.5〜4.0μmに設定することが好ましい。   From the above, the thickness of the sleeve electrodes 85 and 86 is preferably set to 0.5 to 4.0 μm.

−本実施の形態の作用効果−
本実施の形態によれば、一対の励振電極81,82の中心付近が対向して形成されるので(対向電極部87参照)、励振電極81,82の中心付近に最も強い振動変位分布を有する主振動の発振を妨げることはない。また、一対の励振電極81,82の隅部が対向して形成されていないので(無対向電極部88参照)、励振電極81,82の端部付近(具体的には隅部付近)に振動変位分布を有するスプリアス振動(例えば厚み系の2次モードである(1,2,1)モードや(1,1,2)モード、あるいは厚み系の3次モードである(1,3,1)モードや(1,1,3)モードなど)の各スプリアスの振動変位に影響を及ぼし、スプリアス振動を抑制する。なお、両主面22,23の励振電極81,82は、その中心が重なる位置に形成されていることが好ましいが、製造誤差などにより多少ずれているものであっても同様の効果が期待できる。
-Effects of this embodiment-
According to the present embodiment, since the vicinity of the center of the pair of excitation electrodes 81 and 82 is formed to face each other (see the counter electrode portion 87), the strongest vibration displacement distribution is provided near the center of the excitation electrodes 81 and 82. It does not disturb the oscillation of the main vibration. Further, since the corner portions of the pair of excitation electrodes 81 and 82 are not formed to face each other (see the non-opposing electrode portion 88), vibrations occur near the ends of the excitation electrodes 81 and 82 (specifically, near the corner portions). Spurious vibration having a displacement distribution (for example, (1,2,1) mode or (1,1,2) mode which is a secondary mode of thickness system, or (1,3,1) of a tertiary system of thickness system) This affects the vibration displacement of each spurious (mode, (1, 1, 3) mode, etc.) and suppresses spurious vibration. The excitation electrodes 81 and 82 on both main surfaces 22 and 23 are preferably formed at positions where their centers overlap, but the same effect can be expected even if they are slightly deviated due to manufacturing errors or the like. .

また、両主面22,23の励振電極81,82が同形状に形成されているので、水晶振動片2に形成される励振電極81,82の面積を大型化させることなく、励振電極81,82の中心付近の振動領域を確保しながら、励振電極81,82の隅部付近の各スプリアスの振動領域を縮小させる構成とすることができる。すなわち、水晶振動片2の小型化を図りながら、主振動の発振を妨げることなくスプリアス振動を抑制することができる。   Moreover, since the excitation electrodes 81 and 82 of both the main surfaces 22 and 23 are formed in the same shape, the excitation electrodes 81 and 82 can be formed without increasing the area of the excitation electrodes 81 and 82 formed on the crystal vibrating piece 2. It is possible to reduce the vibration area of each spurious near the corners of the excitation electrodes 81 and 82 while securing the vibration area near the center of the electrode 82. That is, spurious vibration can be suppressed without disturbing the oscillation of the main vibration while reducing the size of the crystal vibrating piece 2.

詳説すると、本実施の形態にかかる水晶振動片2によれば、基板21に励振電極81,82と保持電極83,84と袖電極85,86とが形成され、励振電極81,82は、基板21の両主面22,23に対向して形成され、かつ、励振電極81,82は、袖電極85,86よりも薄く、励振電極81,82のうち対向する電極領域によって対向電極部87が構成され、励振電極81,82のうち対向しない電極領域によって無対向電極部88が構成され、対向電極部87の周囲に、対向電極部87に連なって無対向電極部88が配されるので、最も強い振動変位分布を有する主振動の発振を妨げるのを防止することができる。また、励振電極81,82の端部付近に振動変位分布を有するスプリアス振動(例えば厚み系の2次モードである(1,2,1)モードや(1,1,2)モード、あるいは厚み系の3次モードである(1,3,1)モードや(1,1,3)モードなど)について、無対向電極部88が構成されるので、各スプリアスの振動変位に影響を及ぼしてスプリアス振動を抑制することができる。また、高周波化に対応させるために励振電極81,82を薄く設定することもでき、その上、袖電極85,86を励振電極81,82より厚くして、電極8の断線を防止することができ、また、スプリアス振動もより一層抑制することができる。すなわち、本実施の形態にかかる水晶振動片2によれば、電極8の断線の防止と、スプリアス振動の抑制とを同時に行うことができる。   More specifically, according to the quartz crystal resonator element 2 according to the present embodiment, the excitation electrodes 81 and 82, the holding electrodes 83 and 84, and the sleeve electrodes 85 and 86 are formed on the substrate 21, and the excitation electrodes 81 and 82 are formed on the substrate. The excitation electrodes 81, 82 are thinner than the sleeve electrodes 85, 86, and the counter electrode portion 87 is formed by the opposing electrode regions of the excitation electrodes 81, 82. Since the non-opposing electrode portion 88 is configured by the non-opposing electrode regions of the excitation electrodes 81 and 82, and the non-opposing electrode portion 88 is arranged around the counter electrode portion 87 and connected to the counter electrode portion 87, It is possible to prevent the oscillation of the main vibration having the strongest vibration displacement distribution from being disturbed. Further, spurious vibrations having a vibration displacement distribution in the vicinity of the end portions of the excitation electrodes 81 and 82 (for example, (1,2,1) mode, (1,1,2) mode which is a secondary mode of thickness system, thickness system) Since the non-opposing electrode portion 88 is configured for the (1,3,1) mode, (1,1,3) mode, etc.), the spurious vibration is affected by the vibration displacement of each spurious. Can be suppressed. Further, the excitation electrodes 81 and 82 can be set to be thin in order to cope with higher frequencies, and the sleeve electrodes 85 and 86 are made thicker than the excitation electrodes 81 and 82 to prevent the electrode 8 from being disconnected. In addition, spurious vibrations can be further suppressed. That is, according to the crystal vibrating piece 2 according to the present embodiment, it is possible to simultaneously prevent the disconnection of the electrode 8 and suppress spurious vibration.

また、基板21は、結晶性材料であり、励振電極81,82は、略正方形に成形され、励振電極81,82と袖電極85,86との境界27が平面視V字であるので、直交する結晶軸方向に沿ってそれぞれ発生する各スプリアス振動を同時に抑制することができる。   Further, the substrate 21 is made of a crystalline material, the excitation electrodes 81 and 82 are formed in a substantially square shape, and the boundary 27 between the excitation electrodes 81 and 82 and the sleeve electrodes 85 and 86 is V-shaped in plan view. Each spurious vibration generated along the crystal axis direction can be suppressed simultaneously.

また、袖電極85,86は、保持電極83,84よりも薄いので、スプリアス振動を抑制しながら、電極8の断線を防止し、さらに外部電極(電極パッド71,72)との接合を安定させることができる。   Further, since the sleeve electrodes 85 and 86 are thinner than the holding electrodes 83 and 84, the spurious vibration is suppressed, the disconnection of the electrode 8 is prevented, and the bonding with the external electrodes (electrode pads 71 and 72) is further stabilized. be able to.

また、袖電極85,86と保持電極83,84とは、基板21上に蒸着膜が形成され、蒸着膜上にメッキ膜が形成されてなるので、基板21への保持電極83,84の形成強度を高めながら、外部電極(電極パッド71,72)との接合強度を高めることができ、さらに袖電極85,86と保持電極83,84とがメッキ膜により形成されるので、袖電極85,86と保持電極83,84との厚みを増すことが容易になり、断線防止とスプリアス振動の抑制とを同時に図ることができる。   Further, since the sleeve electrodes 85 and 86 and the holding electrodes 83 and 84 are formed by forming a vapor deposition film on the substrate 21 and forming a plating film on the vapor deposition film, the formation of the holding electrodes 83 and 84 on the substrate 21 is formed. While increasing the strength, the bonding strength with the external electrodes (electrode pads 71, 72) can be increased, and the sleeve electrodes 85, 86 and the holding electrodes 83, 84 are formed of a plating film. It is easy to increase the thickness of the electrode 86 and the holding electrodes 83 and 84, and it is possible to simultaneously prevent disconnection and suppress spurious vibrations.

−他の実施の形態−
なお、本実施の形態では、圧電振動デバイスとして水晶振動子を適用しているが、これに限定されるものではなく、圧電振動を行う圧電振動片の励振電極を気密封止する圧電振動デバイスであれば、他のデバイスであってもよく、例えば水晶発振器であってもよい。
-Other embodiments-
In this embodiment, a crystal resonator is applied as the piezoelectric vibration device. However, the present invention is not limited to this, and a piezoelectric vibration device that hermetically seals the excitation electrode of a piezoelectric vibration piece that performs piezoelectric vibration. Any other device may be used, for example, a crystal oscillator.

また、本実施の形態では、第1封止部材3にセラミックを用い、第2封止部材4に金属材料を用いているが、第1封止部材3および第2封止部材4の材料は、これに限定されるものではなく任意に設定可能であり、第1封止部材3および第2封止部材4にガラスなどを用いてもよい。   Moreover, in this Embodiment, although the ceramic is used for the 1st sealing member 3, and the metal material is used for the 2nd sealing member 4, the material of the 1st sealing member 3 and the 2nd sealing member 4 is used. The first sealing member 3 and the second sealing member 4 may be made of glass or the like.

また、本実施の形態では、第1封止部材3に搭載した水晶振動片2を第2封止部材4によって封止する水晶振動子1のパッケージを構成しているが、これに限定されるものではなく、第1封止部材と水晶振動片と第2封止部材とを積層したサンドイッチ構造の水晶振動子のパッケージであってもよい。このサンドイッチ構造の水晶振動子では、第1封止部材と水晶振動片とが封止材を介して接合されて、水晶振動片の他主面に形成された励振電極が第1封止部材と水晶振動片とによって気密封止され、水晶振動片と第2封止部材とが封止材を介して接合されて、水晶振動片の一主面に形成された励振電極が水晶振動片と第2封止部材とによって気密封止される。   Further, in the present embodiment, the crystal resonator element 1 package in which the crystal vibrating piece 2 mounted on the first sealing member 3 is sealed by the second sealing member 4 is configured, but the present invention is not limited to this. It may be a package of a quartz crystal resonator having a sandwich structure in which a first sealing member, a crystal vibrating piece, and a second sealing member are stacked. In this sandwich structure crystal resonator, the first sealing member and the crystal vibrating piece are joined via a sealing material, and the excitation electrode formed on the other main surface of the crystal vibrating piece is connected to the first sealing member. The quartz vibrating piece is hermetically sealed, and the quartz vibrating piece and the second sealing member are bonded together via a sealing material, and the excitation electrode formed on one main surface of the quartz vibrating piece has 2 is hermetically sealed with the sealing member.

また、本実施の形態では、水晶振動片2の基板21は、枠部25を振動部24に対して厚肉化しているが、これに限定されるものではなく、枠部25の厚みを振動部24の厚みと同じ寸法にしてもよい。   In the present embodiment, the substrate 21 of the crystal vibrating piece 2 has the frame portion 25 thicker than the vibration portion 24. However, the present invention is not limited to this, and the thickness of the frame portion 25 is vibrated. The thickness may be the same as the thickness of the portion 24.

また、本実施の形態では、第1封止部材3の電極パッド71,72と水晶振動片2の保持電極83,84とが電気機械的に接合しているが、これに限定されるものではなく、第1封止部材3の電極パッド71,72と水晶振動片2の保持電極83,84とが電気的に接続されていれば、第1封止部材3と水晶振動片2との機械的な接合は他で行ってもよい。   In the present embodiment, the electrode pads 71 and 72 of the first sealing member 3 and the holding electrodes 83 and 84 of the crystal vibrating piece 2 are electromechanically joined, but the present invention is not limited to this. If the electrode pads 71 and 72 of the first sealing member 3 and the holding electrodes 83 and 84 of the crystal vibrating piece 2 are electrically connected, the machine of the first sealing member 3 and the crystal vibrating piece 2 is used. Other joints may be performed elsewhere.

また、本実施の形態では、袖電極85,86と保持電極83,84との境界28は、平面視L字となっているが、これに限定されるものではなく、任意の形状であってもよい。また、袖電極85,86と保持電極83,84との境界28は、振動部24に位置しているが、これは好適な例であり、枠部25に位置してもよい。   In the present embodiment, the boundary 28 between the sleeve electrodes 85 and 86 and the holding electrodes 83 and 84 is L-shaped in plan view, but is not limited to this, and has an arbitrary shape. Also good. In addition, although the boundary 28 between the sleeve electrodes 85 and 86 and the holding electrodes 83 and 84 is located in the vibration part 24, this is a preferred example and may be located in the frame part 25.

また、本実施の形態では、水晶振動片2の外形を、平面視略矩形状の一枚板の直方体としているが、これに限定されるものではなく、例えば、図9に示すように、枠部25に切り欠き部26が設けられてもよい。この図9に示す他の実施の形態では、水晶振動片2の対向する長辺から短辺方向(±Z’軸方向)に沿って切り欠くことにより、切り欠き部26が基板21に設けられている。そのため、水晶振動片2の振動部24に対して導電性バンプ6の接合による応力歪の悪影響を取り除くことができる。   Further, in the present embodiment, the outer shape of the quartz crystal vibrating piece 2 is a rectangular parallelepiped having a substantially rectangular shape in plan view, but is not limited to this. For example, as shown in FIG. The notch portion 26 may be provided in the portion 25. In another embodiment shown in FIG. 9, the notch 26 is provided in the substrate 21 by notching along the short side direction (± Z′-axis direction) from the opposing long side of the quartz crystal vibrating piece 2. ing. Therefore, it is possible to remove the adverse effect of stress distortion caused by the bonding of the conductive bump 6 to the vibrating portion 24 of the crystal vibrating piece 2.

また、本実施の形態では、一対の励振電極81,82の無対向電極部88は、袖電極85,86よりも薄いが、これに限定されるものではなく、図10に示すように、無対向電極部88の厚みが、袖電極85,86の厚みと同じであってもよい。この場合、対向電極部87において主として発振(励振)する主振動に影響を及ぼすことなく対向電極部87の周囲に主振動に付随して発生しやすいスプリアスを抑制するのに好ましい。   Further, in the present embodiment, the non-opposing electrode portion 88 of the pair of excitation electrodes 81 and 82 is thinner than the sleeve electrodes 85 and 86, but is not limited to this, and as shown in FIG. The thickness of the counter electrode portion 88 may be the same as the thickness of the sleeve electrodes 85 and 86. In this case, it is preferable to suppress spurious vibrations that are likely to occur accompanying the main vibration around the counter electrode portion 87 without affecting the main vibration that mainly oscillates (excites) in the counter electrode portion 87.

また、本実施の形態では、同形状であって同一面積の平面視略正方形状に成形された一対の励振電極81,82を用いているが、一対の励振電極81,82のうち端面において無対向となる無対向電極部88が構成されていれば、一対の励振電極81,82の形状は任意に設定可能である。例えば、図11に示すように一対の励振電極81,82の大きさが異なっても良い。図11に示す他の実施の形態の場合、励振電極81の外周全てが励振電極82と対向しない無対向電極部88が構成されている。   In the present embodiment, a pair of excitation electrodes 81 and 82 having the same shape and the same area and having a substantially square shape in plan view are used. The shape of the pair of excitation electrodes 81 and 82 can be arbitrarily set as long as the non-opposing electrode portion 88 that is opposed is configured. For example, the size of the pair of excitation electrodes 81 and 82 may be different as shown in FIG. In the case of another embodiment shown in FIG. 11, a non-opposing electrode portion 88 is configured in which the entire outer periphery of the excitation electrode 81 does not face the excitation electrode 82.

また、本実施の形態では、一対の励振電極81,82が基板21の両主面22,23に対向して形成されているが、励振電極の数はこれに限定されるものではなく任意の数でよく、複数の励振電極が対向して形成されていればよい。例えば、基板21の一主面22に1つの励振電極が形成され、他主面23に2つの励振電極が形成され、一主面22に形成された1つの励振電極と、他主面23に形成された2つの励振電極とが、対向して形成されてもよい。   In the present embodiment, the pair of excitation electrodes 81 and 82 are formed to face both main surfaces 22 and 23 of the substrate 21, but the number of excitation electrodes is not limited to this and is arbitrary. The number may be sufficient, and a plurality of excitation electrodes may be formed so as to face each other. For example, one excitation electrode is formed on one main surface 22 of the substrate 21, two excitation electrodes are formed on the other main surface 23, one excitation electrode formed on the one main surface 22, and the other main surface 23 The two formed excitation electrodes may be formed to face each other.

なお、本発明は、その精神や主旨または主要な特徴から逸脱することなく、他のいろいろな形で実施することができる。そのため、上述の実施例はあらゆる点で単なる例示にすぎず、限定的に解釈してはならない。本発明の範囲は特許請求の範囲によって示すものであって、明細書本文には、なんら拘束されない。さらに、特許請求の範囲の均等範囲に属する変形や変更は、全て本発明の範囲内のものである。   It should be noted that the present invention can be implemented in various other forms without departing from the spirit, gist, or main features. For this reason, the above-described embodiment is merely an example in all respects and should not be interpreted in a limited manner. The scope of the present invention is indicated by the claims, and is not restricted by the text of the specification. Further, all modifications and changes belonging to the equivalent scope of the claims are within the scope of the present invention.

本発明は、特に水晶振動片に好適である。   The present invention is particularly suitable for a quartz crystal resonator element.

1 水晶振動子
11 内部空間
2 水晶振動片
21 基板
22,23 主面
24 振動部
25 枠部
26 切り欠き部
3 第1封止部材
31 底部
32,33 主面
34 壁部
35 キャビティ
36 キャスタレーション
37 ビア
4 第2封止部材
5 封止材
6 導電性バンプ
7 第1封止部材の電極
71,72 電極パッド
73,74 外部端子電極
75 配線パターン
76 導通部材
8 水晶振動片の電極
81,82 励振電極
83,84 保持電極
85,86 袖電極
87 対向電極部
88 無対向電極部
DESCRIPTION OF SYMBOLS 1 Crystal oscillator 11 Internal space 2 Crystal vibrating piece 21 Substrate 22,23 Main surface 24 Vibrating part 25 Frame part 26 Notch part 3 1st sealing member 31 Bottom part 32,33 Main surface 34 Wall part 35 Cavity 36 Caster 36 Via 4 Second sealing member 5 Sealing material 6 Conductive bump 7 Electrodes 71 and 72 of first sealing member Electrode pads 73 and 74 External terminal electrode 75 Wiring pattern 76 Conducting member 8 Electrodes 81 and 82 of crystal resonator element Excitation Electrode 83, 84 Holding electrode 85, 86 Sleeve electrode 87 Counter electrode part 88 Non-opposite electrode part

Claims (2)

圧電振動片において、
基板に、励振を行う複数の励振電極と、外部電極と電気的に接続する保持電極と、前記励振電極を前記保持電極に引き出す袖電極とが形成され、
前記励振電極は、前記袖電極よりも薄く、
複数の前記励振電極は、前記基板の両主面に形成され、前記基板の両主面に形成された複数の前記励振電極により電極領域が構成され、
前記電極領域は、複数の前記励振電極が対向する対向電極部と、複数の前記励振電極が対向しない無対向電極部と、から構成され、
前記対向電極部の周囲に、前記対向電極部に連なって前記無対向電極部が配され、
前記基板は、結晶性材料であり、
前記励振電極は、略正方形に成形され、
前記励振電極と前記袖電極との境界が平面視V字となる圧電振動片。
In the piezoelectric vibrating piece,
A plurality of excitation electrodes that perform excitation, a holding electrode that is electrically connected to an external electrode, and a sleeve electrode that leads the excitation electrode to the holding electrode are formed on the substrate,
The excitation electrode is thinner than the sleeve electrode,
The plurality of excitation electrodes are formed on both main surfaces of the substrate, and an electrode region is configured by the plurality of excitation electrodes formed on both main surfaces of the substrate,
The electrode region is composed of a counter electrode portion where a plurality of the excitation electrodes are opposed to each other, and a non-opposing electrode portion where the plurality of the excitation electrodes are not opposed,
Around the counter electrode part, the non-opposing electrode part is arranged continuously to the counter electrode part,
The substrate is a crystalline material;
The excitation electrode is formed in a substantially square shape,
A piezoelectric vibrating piece in which a boundary between the excitation electrode and the sleeve electrode is V-shaped in plan view .
請求項1に記載の圧電振動片において、
前記袖電極と前記保持電極は、前記基板上に蒸着膜が形成され、前記蒸着膜上にメッキ膜が形成されてなる圧電振動片。
The piezoelectric vibrating piece according to claim 1,
The sleeve electrode and the holding electrode are piezoelectric vibrating pieces in which a vapor deposition film is formed on the substrate and a plating film is formed on the vapor deposition film .
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