CN202586959U - Radio frequency transmit-receive front-end module - Google Patents
Radio frequency transmit-receive front-end module Download PDFInfo
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- CN202586959U CN202586959U CN201220219164XU CN201220219164U CN202586959U CN 202586959 U CN202586959 U CN 202586959U CN 201220219164X U CN201220219164X U CN 201220219164XU CN 201220219164 U CN201220219164 U CN 201220219164U CN 202586959 U CN202586959 U CN 202586959U
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Abstract
The utility model discloses a radio frequency transmit-receive front-end module. According to the module, a QFN8*8-16L standard encapsulation is adopted; a metal substrate at the center of a QFN8*8-16L standard encapsulation lead frame is provided with a rectangular aluminum nitride baseplate and a gallium arsenide low-noise amplification chip, wherein the gallium arsenide low-noise amplification chip is connected with corresponding pins of the QFN8*8-16L standard encapsulation; the surface of the aluminum nitride baseplate is provided with five mutually-isolated metal coating layer regions respectively in which four PIN diode chips and two chip capacitors form a transmit-receive switch switching circuit, wherein one chip capacitor is connected with the gallium arsenide low-noise amplification chip to form a receiving channel. The radio frequency transmit-receive front-end module provided by the utility model can meet a requirement for high-power power amplification switching in a TDD working mode system base station with safe and reliable operation; and further, the radio frequency transmit-receive front-end module is advantageous high sensitivity, high integration, low cost, excellent performance, convenient use and the like.
Description
Technical field
The utility model relates to a kind of very big power based on QFN8 * 8-16L standard packaging, utmost point low noise radio frequency receiving and transmitting front end module, belongs to the mobile communication technology field.
Background technology
The TD-SCDMA of 3G (Third Generation) Moblie and new generation broadband mobile communication and WIMAX system and TD-LTE system all adopt tdd mode; So in base station system, transmission channel power amplifier (PA) switches to needing a high power switch SW to control transmitting-receiving between antenna (ANT) to antenna (ANT) and receive path.
In the utility model patent " super high power, low noise radio frequency receiving and transmitting front end module and preparation method thereof ", mentioned a kind of high-power RF receiving and transmitting front end module, it only satisfies the base station applies of (power is not more than 60W) under the certain power condition.And reach following tdd mode system base-station now power there are requirements at the higher level (more than the power requirement 100W), and the miniaturization of system is had requirements at the higher level.
The utility model content
The utility model technical problem to be solved is very big power, the utmost point low noise radio frequency receiving and transmitting front end module that proposes QFN 8 * 8-16L standard packaging that the TDD system base-station complete machines such as TD-LTE of TD-SCDMA and WIMAX and the 4G of a kind of 3G of being applicable to use; One of purpose is intended to satisfy the condition of work of the very big power switching controls of TDD system base-station power amplifier; Under the condition of radio-frequency power greater than 120W; The safe and reliable work of ability, and guarantee that the receive path of complete machine has the receiving sensitivity of extremely low noise factor and Geng Gao.Two of purpose is intended to improve the integrated level of receiving front-end, and integrated power switch and LNA chip reduce cost in the QFN8X8-16L standard packaging, optimizes performance.
The utility model adopts following technical scheme for solving the problems of the technologies described above:
A kind of radio frequency receiving and transmitting front end module; This module adopts QFN 8 * 8-16L standard packaging; The metal substrate at QFN8 * 8-16L standard packaging lead frame center is provided with aluminium nitride substrate and GaAs LNA chip of a rectangle, and said GaAs LNA chip is connected with the respective pins of QFN 8 * 8-16L standard packaging respectively; Be respectively arranged with five washing layer regions of each other isolating on the said aluminium nitride substrate surface, the first washing layer region middle part of crossing aluminium nitride substrate wherein, and be evenly distributed with N ground hole on this washing layer, N is a natural number; Second belongs to four ends that the coat zone lays respectively at aluminium nitride substrate to five metals;
End on the first washing layer region is provided with first chip capacity; In second, third washing layer region, be respectively arranged with first, second PIN diode chip; In the 4th washing layer region, be provided with the 3rd PIN diode chip and second chip capacity; Belong at five metals and to be provided with the 4th PIN diode chip in the coat zone, constitute the transmit-receive switch commutation circuit of radio frequency receiving and transmitting front end module thus jointly; Wherein:
Said first, second PIN diode chip constitutes the transmission channel of this radio frequency receiving and transmitting front end module; Wherein, the said first PIN diode chip is connected with the 1st pin of QFN 8 * 8-16L standard packaging, and the said second PIN diode chip is connected with the 15th pin of the first PIN diode chip and QFN 8 * 8-16L standard packaging;
Said the 3rd, the 4th PIN diode, first, second chip capacity, and GaAs LNA chip constitutes the receive path of this radio frequency receiving and transmitting front end module; Wherein, said the 3rd PIN diode is connected with the 3rd pin of the 1st pin, the 4th PIN diode, second chip capacity and QFN 8 * 8-16L standard packaging of QFN 8 * 8-16L standard packaging respectively; Said the 4th PIN diode is connected with the 14th pin of first chip capacity, QFN 8 * 8-16L standard packaging respectively; Said second chip capacity is connected with the input pin of GaAs LNA chip.
As the preferred version of a kind of radio frequency receiving and transmitting front end module of the utility model, said first, second PIN diode chip reverse withstand voltage greater than 300V, junction capacitance is less than 0.2P, series resistance is less than 0.5 ohm, thermal resistance less than 15 degree/watt; Said the 3rd, the 4th PIN diode reverse withstand voltage greater than 200V, junction capacitance is less than 0.05P, and series resistance is less than 0.5 ohm.
As the preferred version of a kind of radio frequency receiving and transmitting front end module of the utility model, first, second chip capacity is the single-layer ceramic chip capacity.
The utility model adopts above technical scheme compared with prior art, has following technique effect:
1) can realize in QFN8 * 8-16L standard packaging that switch and low noise are integrated, and the safe and reliable work of ability under the high-power condition of radio frequency continuous wave 120W;
2) satisfied the requirement of TD-SCDMA, WIMAX and the high-power switching controls of TD-LTE system base-station power amplifier; Satisfy the low-noise factor and the gain requirement of TD-SCDMA, WIMAX and TD-LTE frequency range receive path, whole receiving front-end noise factor is low to moderate 0.8dB, improves receiving sensitivity; Integrated level is high, and cost is low, and performance is excellent.
3) the utility model is to realize that in QFN8 * 8-16L standard packaging switch and low noise block are integrated, has improved the integrated level of module greatly, has optimized performance.Improved the versatility of product, the receiving front-end of standard packaging has better large-scale production property, effectively reduces product cost.
4) owing to adopt multicore sheet assembling (MCM) technology, no matter diode chip for backlight unit still is silicon integrated drive chips and GaAs integrated low-noise chip, all adopts the direct bonding processing method of bare chip; Thereby reduced the thermal resistance between chip and the substrate; And avoided additive effect that encapsulation brings to Effect on Performance, and optimized the module electrical property, make the reliability of module; The product electrical property all gets a promotion, and has also reduced the use cost of module.
5) adopt the design of high heat conduction aluminium nitride (AlN) substrate circuit; And the high-thermal conductivity A 1 N substrate adopts high heat conduction silver slurry to be bonded on QFN8 * 8-16L standard packaging central metal substrate; Reduced the thermal resistance between PIN diode chip and application circuit; Adopt this design, can make the capacity of prime switch bigger, more reliable.
The utility model is the high power switch low noise integrated module of researching and developing to the machine system of TD-SCDMA and TDD communication standards such as WIMAX and TD-LTE.Adopt advanced multichip modules technology (MCM) and multi-layer ceramics burning technology altogether; The standard packaging technology, product has littler loss, more high-isolation, more high power capacity, higher reliability, littler noise factor, higher gain in the TDD of 3G and 4G mode of operation system.
Description of drawings
Fig. 1 is the structural representation of the radio frequency receiving and transmitting front end module of the utility model; Label among the figure: A-aluminium nitride substrate; The high-power PIN diode chip of B-; Power diode chip among the C-; D, E-chip capacity; F-GaAs LNA chip; 1-16 representes 16 pins of QFN8 * 8-16L standard packaging respectively.
Fig. 2 is the aluminium nitride substrate sketch map; Label among the figure: 21 expression ground holes, 22 expression washing layer regions.
Fig. 3 is a GaAs LNA chip sketch map.
Fig. 4 is the application sketch map of the utility model.
Embodiment
Below in conjunction with accompanying drawing the technical scheme of the utility model is done further detailed description:
As shown in Figure 1, the structural representation of radio frequency receiving and transmitting front end module.On the central metal substrate in QFN8 * 8-16L standard packaging lead frame, be provided with aluminium nitride substrate A, GaAs LNA chip F.
On the surface of aluminium nitride substrate A, be respectively arranged with five washing layer regions of isolating each other; One of them washing layer region crosses the middle part of aluminium nitride substrate; And be evenly distributed with 7 ground holes on this washing layer, an end in this zone is provided with the first chip capacity E.
All the other four washing layer regions lay respectively at four end angles of aluminium nitride substrate, and are provided with a PIN diode chip in each washing layer region, have also increased a chip capacity D in one of them washing layer region.
Connect each other like two among Fig. 1 high-power PIN diode chip B and to constitute the transmission channel of this radio frequency receiving and transmitting front end module; One of them high-power PIN diode chip is connected with the 1st pin of QFN 8 * 8-16L standard packaging, and another high-power PIN diode chip is connected with the 15th pin of QFN 8 * 8-16L standard packaging through the metal level of substrate.
Like two among Fig. 1 middle power diode chip C, two chip capacity D, E, and GaAs LNA chip constitutes the receive path of this radio frequency receiving and transmitting front end module; Power P IN diode C is respectively with the 1st pin of QFN 8 * 8-16L standard packaging, the 3rd pin of power P IN diode C, chip capacity D and QFN 8 * 8-16L standard packaging is connected in another in one of them; Simultaneously, power P IN diode C is connected with the 14th pin of chip capacity E, QFN 8 * 8-16L standard packaging respectively in another, constitutes string and combines switching circuit.Chip capacity D connects GaAs LNA chip, constitutes receive path.
The preparation of this radio frequency receiving and transmitting front end module may further comprise the steps:
Starch bonding four PIN diode chips and two chip capacities with silver respectively in step 3, the washing layer region on aluminium nitride substrate; Wherein: first chip capacity is bonded in an end of the first washing layer region; The first PIN diode die bonding is in the second washing layer region; The second PIN diode die bonding is in the 3rd washing layer region; The 3rd PIN diode chip and second chip capacity are bonded in the 4th washing layer region, and the 4th PIN diode die bonding belongs in the coat zone at five metals;
Step 8, each pin of GaAs LNA chip is connected through bonding gold wire respectively with between the corresponding pin of QFN8 * 8-16L standard packaging lead frame.As shown in Figure 1, wherein lead-in wire is connected in the ground connection that is meant of blank space.
Embodiment:
As shown in Figure 2, aluminium nitride substrate A selects the thick aluminium nitride of 0.2mm for use, carries out the design of pcb board circuit diagram, surface gold-plating according to the circuit diagram of Fig. 2.The aperture of ground hole is 0.2mm in the plate.Aluminium nitride substrate is of a size of 2.4 * 2.4mm.Two high-power PIN diode chip B mainly consider from following aspect: reverse withstand voltage greater than 300V, junction capacitance is less than 0.2P, and series resistance is less than 0.5 ohm, thermal resistance less than 15 degree/watt.Require to select PIN diode chip B according to these.Mainly from reverse withstand voltage greater than 200V, junction capacitance is less than 0.05P for power P IN diode chip for backlight unit C in two other, and series resistance is less than 0.5 ohm.Require to select according to these.Electric capacity D, E use the single-layer ceramic chip capacity.
The integrated gallium arsenide The low noise amplifier chip is of a size of 0.96 * 0.78mm, and is as shown in Figure 3, has 12 external interfaces, and its interface connects also with reference to Fig. 1.The effect of GaAs The low noise amplifier chip is to amplify to received signal, constitutes receive path, satisfies the noise factor and the gain requirement of receive path.
The application of the utility model is as shown in Figure 4: during emission state, and power amplifier work, power is exported by power amplifier, and the radio frequency receiving and transmitting front end module of process the utility model switches to antenna; During accepting state, signal is imported by antenna, and the radio frequency receiving and transmitting front end module of process the utility model switches to the reception processing unit.The passage switching controls is realized by control and match circuit with coupling.
Low noise amplifier has in the leading indicator of TD-SCDMA: the noise factor representative value is 0.6; The gain representative value is 23dB; The 1dB compression point is 21dB.
Claims (3)
1. radio frequency receiving and transmitting front end module; It is characterized in that: this module adopts QFN 8 * 8-16L standard packaging; The metal substrate at QFN8 * 8-16L standard packaging lead frame center is provided with aluminium nitride substrate and GaAs LNA chip of a rectangle, and said GaAs LNA chip is connected with the respective pins of QFN 8 * 8-16L standard packaging respectively; Be respectively arranged with five washing layer regions of each other isolating on the said aluminium nitride substrate surface, the first washing layer region middle part of crossing aluminium nitride substrate wherein, and be evenly distributed with N ground hole on this washing layer, N is a natural number; Second belongs to four ends that the coat zone lays respectively at aluminium nitride substrate to five metals;
End on the first washing layer region is provided with first chip capacity; In second, third washing layer region, be respectively arranged with first, second PIN diode chip; In the 4th washing layer region, be provided with the 3rd PIN diode chip and second chip capacity; Belong at five metals and to be provided with the 4th PIN diode chip in the coat zone, constitute the transmit-receive switch commutation circuit of radio frequency receiving and transmitting front end module thus jointly; Wherein:
Said first, second PIN diode chip constitutes the transmission channel of this radio frequency receiving and transmitting front end module; Wherein, the said first PIN diode chip is connected with the 1st pin of QFN 8 * 8-16L standard packaging, and the said second PIN diode chip is connected with the 15th pin of the first PIN diode chip and QFN 8 * 8-16L standard packaging;
Said the 3rd, the 4th PIN diode, first, second chip capacity, and GaAs LNA chip constitutes the receive path of this radio frequency receiving and transmitting front end module; Wherein, said the 3rd PIN diode is connected with the 3rd pin of the 1st pin, the 4th PIN diode, second chip capacity and QFN 8 * 8-16L standard packaging of QFN 8 * 8-16L standard packaging respectively; Said the 4th PIN diode is connected with the 14th pin of first chip capacity, QFN 8 * 8-16L standard packaging respectively; Said second chip capacity is connected with the input pin of GaAs LNA chip.
2. a kind of radio frequency receiving and transmitting front end module according to claim 1 is characterized in that: said first, second PIN diode chip reverse withstand voltage greater than 300V, junction capacitance be less than 0.2P, and series resistance is less than 0.5 ohm, thermal resistance less than 15 degree/watt; Said the 3rd, the 4th PIN diode reverse withstand voltage greater than 200V, junction capacitance is less than 0.05P, and series resistance is less than 0.5 ohm.
3. a kind of radio frequency receiving and transmitting front end module according to claim 1 is characterized in that: said first, second chip capacity is the single-layer ceramic chip capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220219164XU CN202586959U (en) | 2012-05-16 | 2012-05-16 | Radio frequency transmit-receive front-end module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220219164XU CN202586959U (en) | 2012-05-16 | 2012-05-16 | Radio frequency transmit-receive front-end module |
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| Publication Number | Publication Date |
|---|---|
| CN202586959U true CN202586959U (en) | 2012-12-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201220219164XU Withdrawn - After Issue CN202586959U (en) | 2012-05-16 | 2012-05-16 | Radio frequency transmit-receive front-end module |
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| CN (1) | CN202586959U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709264A (en) * | 2012-05-16 | 2012-10-03 | 南京国博电子有限公司 | Radio frequency (RF) transceiving front end module and preparation method thereof |
| CN103607211A (en) * | 2013-11-04 | 2014-02-26 | 南京国博电子有限公司 | TDD switch, driving and low noise amplifier integration receiving front end and manufacturing method thereof |
-
2012
- 2012-05-16 CN CN201220219164XU patent/CN202586959U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709264A (en) * | 2012-05-16 | 2012-10-03 | 南京国博电子有限公司 | Radio frequency (RF) transceiving front end module and preparation method thereof |
| CN102709264B (en) * | 2012-05-16 | 2014-09-03 | 南京国博电子有限公司 | Radio frequency (RF) transceiving front end module and preparation method thereof |
| CN103607211A (en) * | 2013-11-04 | 2014-02-26 | 南京国博电子有限公司 | TDD switch, driving and low noise amplifier integration receiving front end and manufacturing method thereof |
| CN103607211B (en) * | 2013-11-04 | 2015-08-05 | 南京国博电子有限公司 | TDD switch, driving and LNA integration receiving front-end and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP02 | Change in the address of a patent holder |
Address after: 211111 No. 166 middle middle road, Jiangning District, Jiangsu, Nanjing Patentee after: Nanjing GEC Electonics Co., Ltd. Address before: Zhongshan East Road, Baixia District of Nanjing city of Jiangsu Province, No. 524 210016 Patentee before: Nanjing GEC Electonics Co., Ltd. |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20121205 Effective date of abandoning: 20140903 |
|
| RGAV | Abandon patent right to avoid regrant |