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CN202472066U - Multi-luminescent unit semiconductor laser beam coupling system - Google Patents

Multi-luminescent unit semiconductor laser beam coupling system Download PDF

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Publication number
CN202472066U
CN202472066U CN 201120565843 CN201120565843U CN202472066U CN 202472066 U CN202472066 U CN 202472066U CN 201120565843 CN201120565843 CN 201120565843 CN 201120565843 U CN201120565843 U CN 201120565843U CN 202472066 U CN202472066 U CN 202472066U
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CN
China
Prior art keywords
semiconductor laser
module
edge glass
glass stack
chip
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Expired - Fee Related
Application number
CN 201120565843
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Chinese (zh)
Inventor
刘兴胜
王晓飚
王敏
郑艳芳
栾凯
高毅
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Xian Focuslight Technology Co Ltd
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Xian Focuslight Technology Co Ltd
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Priority to CN 201120565843 priority Critical patent/CN202472066U/en
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Publication of CN202472066U publication Critical patent/CN202472066U/en
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Abstract

The utility model provides a multi-luminescent unit semiconductor laser beam coupling system. The beam coupling system comprises a semiconductor laser module, a couple of prism stacks used for beam cutting and rearrangement, and a focusing module used for focusing and coupling cut and rearranged beams to an optical fiber, the semiconductor laser module, the prism stacks and the focusing module being arranged sequentially. The semiconductor laser module is formed by stacking a plurality of semiconductor laser chips with micorlens added. With the beam coupling system, the focusing efficiency of laser beams can be improved, and thus the aim of coupling the beams into an optical fiber in smaller core diameter is achieved, and a coupling system with high power and high brightness is realized.

Description

A kind of multi-illuminating unit semiconductor laser light beam coupling system
Technical field
The utility model relates to a kind of multi-illuminating unit semiconductor laser light beam coupling system.
Background technology
Volume is little, in light weight owing to having, the life-span long for semiconductor laser diode (LD), the electro-optical efficiency advantages of higher, is widely used in main field such as Materialbearbeitung mit Laserlicht, Information And Communication, health care and national defense and military.At present, all solid state laser of LD pumping (DPL) and fiber laser earn widespread respect and study.For emergent power and the brightness that improves semiconductor laser; At present main adopt single-shot luminous point coupling outgoing arranged; Array fibre crust bar coupling outgoing; The crust strip array can make the photoelectric transformation efficiency of semiconductor laser chip reach 60%-70% through methods such as the direct outgoing of shaping, and emergent power reaches more than 600W-1000W.Because the singularity of semiconductor laser structure has determined that its quality factor fast, slow axis beam is inconsistent, and high-power semiconductor laser is coupled in the optical fiber of littler core diameter, the slow axis quality factor of improving the crust bar becomes more important.It is a lot of to improve the slow axis method for quality at present, such as little ladder catoptron, double mirror, binary optical method etc.The part processing difficulty is bigger in general for these methods, and coupling efficiency is lower, can only reach 70%.
The utility model content
The utility model provides a kind of multi-illuminating unit semiconductor laser light beam coupling system, improving the focusing efficiency of laser beam, thereby reaches the purpose that is coupled into littler core optical fibers, realizes the coupled system of high power, high brightness.
The technical scheme of the utility model is following:
The method that a kind of multi-illuminating unit semiconductor laser light beam cutting is reset adopts a pair of edge glass stack at least, and every pair of edge glass stack is made up of first edge glass stack and second edge glass stack, all is to be misplaced successively to pile up along its hypotenuse by a plurality of prismatic lenses to form; Said a plurality of prismatic lens is right-angle prism so that incident beam is parallel with outgoing beam;
The light beam that multi-illuminating unit semiconductor laser sends is cut apart the beam unit that forms with a plurality of one to one dislocation arrangements of said a plurality of prismatic lenses through the reflection of first edge glass stack;
The beam unit that a plurality of dislocation are arranged is incident to behind second edge glass stack secondary reflection again; The public inclined-plane of said second edge glass stack is parallel with the public inclined-plane of first edge glass stack, and the hypotenuse of each prismatic lens is all vertical with the hypotenuse of each prismatic lens in first edge glass stack in second edge glass stack; Make the integration of these beam unit of dislocation arrangement completion once more on the direction vertical of these beam unit with the first edge glass stack dislocation direction.
Based on such scheme, specifically can establish a 1Be the hypotenuse length of prismatic lens in first edge glass stack; a 2Be the hypotenuse length of prismatic lens in second edge glass stack; B is the thickness of prismatic lens in first, second edge glass stack; C is the width dimensions of hot spot to the first edge glass stack place; E is the length dimension of hot spot to the first edge glass stack place; D is the distance that first and second edge glass stacks stagger along hypotenuse; N is the number of prismatic lens in first, second edge glass stack; Then d>=b/2 and b>c, e/b=n, a 1>2 (d (n-1)+e), a 2>2 (nb-(n-1) d).
Above-mentioned prismatic lens is to carry out twice internal reflection or external reflection to realize that incident beam is parallel with outgoing beam.
A kind of multi-illuminating unit semiconductor laser light beam coupling system that uses above-mentioned light beam cutting rearrangement method comprises the semiconductor laser module that sets gradually, in order to carry out a pair of edge glass stack that the light beam cutting resets, to reset the focus module that back light beam focusing is coupled into optical fiber in order to cut; Described semiconductor laser module is to have added lenticular a plurality of semiconductor laser chip to pile up composition.
Above-mentioned lenticule group can adopt spherical lens or non-spherical lens, with the corresponding one by one setting of semiconductor laser chip.
Above-mentioned prismatic lens can adopt the form of optical glass, metal or total reflection film.
Above-mentioned semiconductor laser chip can adopt mini bar, partly cling to bar chip or standard cm crust bar chip.
The technique effect of the utility model is:
The utility model has adopted the simple edge glass stack of manufacture craft laser beam to be cut apart the optical shaping design of rearrangement; Solved the long-pending uniform balance problem of fast and slow axis beche-de-mer without spike of light beam; Light beam coupling efficient is reached more than 80%; Improve more than 10% than existing like product, optical fiber exit end optical power density can reach 10 5Watt/square centimeter, not only satisfied the demand of market, and the element processing technology is simple, cost is low, is convenient to industrial applications to high power, high electric light conversion ratio Optical Maser System.
(1) can realize simultaneously fast axle and slow axis beam collimation are reduced the volume of laser optics colimated light system, thereby reduce the system dimension of semiconductor laser shaping and coupling.
(2) collimation is effective, and generally fast axle half angle of divergence of semiconductor laser is 35 °, and slow axis half angle of divergence is 5 °, and astigmatism is 0.5, the edge glass stack of the utility model, and angle can be less than 8mrad behind the slow axis collimation, and fast axle is less than 2mrad.
(3) because this edge glass stack collimation of employing is good, so the coupling efficiency when being used for the optical fiber coupling of the light beam after the collimation is high, and realizes the coupling of high brightness easily.
Description of drawings
Fig. 1 is the utility model semiconductor laser beam coupled system synoptic diagram;
Fig. 2 is single prismatic lens internal reflection fundamental diagram;
Fig. 3 is single prismatic lens external reflection fundamental diagram;
Fig. 4 is for clinging to bar chip shoot laser hot spot figure through emitting laser hot spot figure behind first, second edge glass stack;
Fig. 5 is the utility model semiconductor laser beam coupled system embodiment synoptic diagram.
The drawing reference numeral explanation:
1, semiconductor laser module; 2, edge glass stack module; 3, focus module; 4, semiconductor laser chip; 5, lenticule; 6, first edge glass stack; 7, first edge glass stack; 8,9 is lens; 10, optical fiber; 11,12 is prismatic lens; 13,14,15,16,17,18 is laser beam.
Embodiment
Be described further below in conjunction with the embodiment of accompanying drawing the utility model semiconductor laser beam coupled system.
The utility model is realized through following technical scheme; This semiconductor laser beam coupled system; Be made up of the semiconductor laser module that is arranged in order by light path, focus module and optical fiber, on the light path between semiconductor laser module and the focus module, be laid with the edge glass stack module, the edge glass stack module is made up of two edge glass stacks of mutual right-angle array; Be respectively first edge glass stack and second edge glass stack, each edge glass stack is made up of one group of prismatic lens that is the stacked arrangement that misplaces.
Said semiconductor laser module is to have added lenticular a plurality of semiconductor laser chip to pile up composition; Semiconductor laser chip is the multi-illuminating unit chip; Can be mini bar and partly cling to the bar chip or standard cm crust bar chip that the chip number of semiconductor laser is 1 or a plurality of; Lenticule is spherical lens, non-spherical lens or other lens, and the lenticule number is identical with the semiconductor laser chip number;
The material of said edge glass stack can be optical glass, metal, also can be total reflection film, and prismatic lens can be the three-dimensional eyeglass of any geometric configuration; Can be principles of internal reflection, also can be the external reflection principle, and edge glass stack can be integrated; Also can form one group by 2-100 prismatic lens; When prismatic lens quantity during, they by rule dislocation stacked arrangement, are fastenedly connected each other greater than 1;
Said focus module is condenser lenses such as spherical lens or aspheric surface.
In the utility model semiconductor laser beam coupled system; The edge glass stack module places the semiconductor laser module rear end to be used for the laser beam cutting rearrangement that the noise spectra of semiconductor lasers module is sent, and wherein the reflecting surface of first edge glass stack is corresponding with the light beam of semiconductor laser device module outgoing; Focus module places edge glass stack module rear end to be used for the light beam after the cutting rearrangement is focused on coupled into optical fibres, and optical fiber places the focus module rear end to be used for shoot laser.In the coupled system of the utility model,, can select to add the PBS prism when the quantity of semiconductor laser module during greater than 2.
Fig. 1 is the described semiconductor laser beam coupled system of the utility model, is arranged in order by beam path by semiconductor laser module 1, edge glass stack module 2, focus module 3 and optical fiber 10 and forms.
The principle of work of each prismatic lens is seen Fig. 2 and Fig. 3; In the semiconductor laser module semiconductor laser chip through lenticule carry out soon, the preparatory collimation of slow axis; Laser beam behind the collimation cuts rearrangement through the edge glass stack module again; Make the light beam of the fast and slow axis of light beam reach approximate equilibrium, then the focus module passed through of laser beam focuses on coupling back outgoing.
Fig. 4 is emitting laser hot spot figure behind first, second edge glass stack of semiconductor laser chip shoot laser hot spot figure process, and wherein S101 is semiconductor laser chip shoot laser hot spot figure; S102 is the shoot laser hot spot figure of outgoing hot spot figure after through first edge glass stack among the S101, and the spot width summation of outgoing is identical with the spot width of outgoing among the S101; S103 is the shoot laser hot spot figure of outgoing hot spot figure after through second edge glass stack among the S102, and the hot spot height of outgoing is identical with the hot spot height sum of outgoing among the S102.
An embodiment of the utility model is as shown in Figure 5; Lenticule 5 at first is installed near the luminous zone of each semiconductor laser chip 4; The edge glass stack module 2 that will comprise first edge glass stack 7 and second edge glass stack 6 places semiconductor laser pack module 1 rear end; Place the rear end of edge glass stack module 2 to focus module 3, optical fiber 10 places the rear end of focus module 3.In the semiconductor laser module 1; The light beam process lenticule 5 that semiconductor laser chip 4 sends carries out soon, the preparatory collimation of slow axis; Laser beam behind the collimation cuts rearrangement through first edge glass stack 7 and second edge glass stack 6 in the edge glass stack module 2 again; Make the long-pending approximate equilibrium that reaches of beche-de-mer without spike fast, slow axis of light beam, after the laser beam of process optical shaping focuses on coupling through focus module 3 again, through optical fiber 10 outgoing.In the present embodiment, first edge glass stack 7 in the edge glass stack module 2 and second edge glass stack 6 are made up of one group of triangle body prismatic lens that comprises 7 dislocation stacked arrangement respectively, and its queueing discipline is: d>=b/2 and b>c, e/b=n, a 1>2 (d (n-1)+e), a 2>2 (nb-(n-1) d); Wherein: a 1Be the hypotenuse length of prismatic lens in first edge glass stack; a 2Be the hypotenuse length of prismatic lens in second edge glass stack; B is the thickness of prismatic lens in first, second edge glass stack; C is the width dimensions of hot spot to the first edge glass stack place; E is the length dimension of hot spot to the first edge glass stack place; The distance that d staggers along hypotenuse for first, second edge glass stack; N is the number of prismatic lens in first, second edge glass stack.
The above-mentioned a kind of embodiment that is merely the utility model; Certainly can not limit the interest field of the utility model with this; Those skilled in the art can make various corresponding changes and distortion according to basic scheme and the above embodiment that the utility model proposes, but these corresponding changes and distortion all should belong to the protection domain of the claim of the utility model.

Claims (4)

1. multi-illuminating unit semiconductor laser light beam coupling system is characterized in that: comprise the semiconductor laser module that sets gradually, in order to carry out a pair of edge glass stack that the light beam cutting resets, to reset the focus module that back light beam focusing is coupled into optical fiber in order to cut; Described semiconductor laser module is to have added lenticular a plurality of semiconductor laser chip to pile up composition.
2. semiconductor laser beam coupled system according to claim 1 is characterized in that: the lenticule group adopts spherical lens or non-spherical lens, with the corresponding one by one setting of semiconductor laser chip.
3. semiconductor laser beam coupled system according to claim 1 is characterized in that: said prismatic lens adopts the form of optical glass, metal or total reflection film.
4. semiconductor laser beam coupled system according to claim 1 is characterized in that: said semiconductor laser chip adopts mini bar, partly clings to bar chip or standard cm crust bar chip.
CN 201120565843 2011-12-20 2011-12-20 Multi-luminescent unit semiconductor laser beam coupling system Expired - Fee Related CN202472066U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201120565843 CN202472066U (en) 2011-12-20 2011-12-20 Multi-luminescent unit semiconductor laser beam coupling system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201120565843 CN202472066U (en) 2011-12-20 2011-12-20 Multi-luminescent unit semiconductor laser beam coupling system

Publications (1)

Publication Number Publication Date
CN202472066U true CN202472066U (en) 2012-10-03

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103345013A (en) * 2013-07-16 2013-10-09 西安电子科技大学 Special-shaped prism and semiconductor laser array flat-topped beam shaper
CN111837063A (en) * 2018-03-12 2020-10-27 古河电气工业株式会社 Optical fiber bundle with beam overlapping mechanism

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103345013A (en) * 2013-07-16 2013-10-09 西安电子科技大学 Special-shaped prism and semiconductor laser array flat-topped beam shaper
CN103345013B (en) * 2013-07-16 2015-08-05 西安电子科技大学 A kind of special-shaped glass prism and semiconductor laser array flat top beam reshaper
CN111837063A (en) * 2018-03-12 2020-10-27 古河电气工业株式会社 Optical fiber bundle with beam overlapping mechanism

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CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20121003

Termination date: 20171220