CN100460977C - Device for implementing shaping high power caser diode pile light beam - Google Patents
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- CN100460977C CN100460977C CNB2007100632497A CN200710063249A CN100460977C CN 100460977 C CN100460977 C CN 100460977C CN B2007100632497 A CNB2007100632497 A CN B2007100632497A CN 200710063249 A CN200710063249 A CN 200710063249A CN 100460977 C CN100460977 C CN 100460977C
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Abstract
A device for shaping light beam of heavy power laser diode stack is prepared as corresponding each rush bar of laser diode stack to each line reflector of stacked step reflector, setting the second step reflector above stacked step reflector, reflecting light spot being formed from each rush bar of laser diode stack and being collimated by fast shaft to fast shaft direction and driving said light spot to be n sections at slow shaft direction for eliminating dark region between rush bars off, reflecting n sections light beam by the second step reflector to turn light beam in 90 degree for realizing light beam-shaping.
Description
Technical field
The present invention relates to a kind of light-beam forming unit of high power laser diode heap, belong to the laser technology application.
Background technology
Semiconductor laser is because volume is little, in light weight, the electrical efficiency advantages of higher obtains application more and more widely, and especially the coupling of the optical fiber of high power semiconductor lasers has great use to materials processing, will become the strong competition of lamp pump solid state laser.But because semiconductor laser is subjected to the restriction of self structure, make its beam quality poor, power density is low.The MQW semiconductor laser that generally adopts is respectively 100um～200um and 1um on its luminescence unit size level and the vertical direction at present, and causing its vertical direction is the quick shaft direction angle of divergence 36～40 degree, and horizontal direction is that slow-axis direction is 8～10 degree.And semiconductor laser array is integrated in the horizontal direction by a plurality of such luminescence units, width is 10mm, behind the lenticule collimation, the optical parameter product of quick shaft direction is about (BPP is the waist radius of light beam and the product of its far-field divergence angle) 1～2mm.mrad, and slow-axis direction is approximately 500mm.mrad.The optical parameter product is an important indicator weighing laser beam, and when through the optical transform system transmissions, the optical parameter product is constant.Just because of the beam quality utmost point lack of uniformity on this both direction, be difficult to be focused into the little hot spot of justifying, to improve power density or to carry out its beam quality of optical fiber coupling the improvement by common optical imaging system.Therefore, must adopt the beam shaping method, resolved beam is of poor quality, the problem that power density is low.Beam shaping mainly is by LD (laser diode) light beam being cut apart, rotate, reset, make that the light beam parameters product on the slow-axis direction reduces, reaching the purpose that balanced optical parameter product improves beam quality at present.Its shaping methods mainly contains: refraction shaping method, folding/reflection shaping method, reflection shaping method.For refraction shaping method, according to refraction principle, light beam incides in the transparent medium (glass plate) at a certain angle, and direction will change.If this medium is parallel medium, it is constant that light beam passes the direction of propagation, back, but the position will be moved in the plane of incidence.Different amount of movements can be controlled by different incident angles and medium length.Adopt the multi-layer transparent medium can realize the rearrangement of light beam.Thereby reach the purpose of beam shaping, the Wuhan photoelectricity company limited of reaching the clouds adopts the method.
Folding/reflection shaping method.The beam shaping method that U.S. Apollo Instruments proposes.Its shaping thought is to utilize the catadioptric of prism group, cuts apart with going again by two groups of prisms and restraints.Each sheet prism is benchmark with the hypotenuse in two groups of prisms, presses the certain distance dislocation successively and places.The line source outgoing beam is from first prism group hypotenuse incident, the inside surface of line source and prism group has a certain degree, twice back of reflection is from the hypotenuse outgoing in each sheet prism, be divided into the n section along slow-axis direction, because prismatic lens dislocation, so the outgoing beam section is dislocation in turn also, become step to distribute along quick shaft direction.Emergent light enters second prism group then, by identical principle light beam is carried out overline at quick shaft direction.After the outgoing beam process prism group, beam parameter product reduces 1/n doubly at slow-axis direction as a result, and quick shaft direction has increased n doubly.Make two directions have similar beam parameter product to reach the purpose of shaping.
Reflection shaping method-stepped ramp type catoptron orthopedic systems.At first quick shaft direction is collimated, realize the symmetrical distribution of output light field again with the stepped ramp type catoptron of two symmetries by aspheric surface microtrabeculae lens.Each reflecting surface of first step catoptron becomes 45 degree with slow-axis direction, second each reflecting surface of step catoptron becomes 45 degree with quick shaft direction, after passing through first step mirror through the light beam behind the fast axis collimation like this, be divided into N unit, and be reflected to quick shaft direction, the direction of propagation becomes slow-axis direction and each beam cross section and has rotated 90 degree after second step mirror reflection again, reaches the purpose of beam shaping like this.The Jenoptik company of Germany adopts this technology exactly.
But above-mentioned three kinds of beam shaping methods are a beam shaping at single laser diode fragrant plant bar (Diodelaser bar) all, and does not also have direct device at shaping high power caser diode pile light beam at present.
Summary of the invention
The invention provides a kind of direct device at shaping high power caser diode pile light beam, this device has directly improved laser diode to be stacked beam quality, has eliminated the dark space between the fragrant plant bar, makes it can focus on very little hot spot and is coupled in the multimode optical fiber.
In order to achieve the above object, the present invention has taked following technical scheme: the present invention realizes the beam shaping of laser diode heap by stacking the shape ladder catoptron 2 and the second ladder catoptron 4.
This device mainly includes the laser diode heap that contains m fragrant plant bar, stacks the shape ladder catoptron 2 and the second ladder catoptron 4 by what the capable n row of m catoptron was formed, each fragrant plant bar of laser diode heap is corresponding with the every capable catoptron that stacks shape ladder catoptron 2 respectively, the second ladder catoptron 4 be positioned at stack shape ladder catoptron 2 directly over; From each fragrant plant bar of laser diode heap, stacked shape ladder catoptron 2 through the hot spot behind the fast axis collimation 1 and reflexed to quick shaft direction, and on slow-axis direction, be divided into the n section, this n section light beam is by 4 reflections of the second ladder catoptron, and make light beam revolve to turn 90 degrees, realize the purpose of beam shaping.
The described shape ladder catoptron 2 that stacks is a ladder reflection mirror array that the capable n of m is listed as, it is identical that the fragrant plant bar of line number m and high power laser diode heap is counted m, and it is all identical with laser diode heap hot spot along the height of the width of slow-axis direction and quick shaft direction to stack shape ladder catoptron 2.Wherein, all stagger before and after the transmission direction of the light successively distance of d3 of n in an every row catoptron, m in an every row catoptron is all along stagger the up and down successively distance of d1 of quick shaft direction, be expert at, row all form the ladder catoptron, the reflecting surface of m * n catoptron all becomes 45 degree with corresponding fragrant plant bar slow-axis direction, the height of each catoptron on quick shaft direction is identical with the spot size of each fragrant plant bar quick shaft direction, the minute surface width of each catoptron is d4, the ladder degree of depth that catoptron in every row staggers along the optical transmission direction front and back equals the summation m * d2 of laser diode heap quick shaft direction spot size, and the width of every row ladder catoptron on optical axis direction also is d3.Between each row order ladder catoptron along the width of luminous zone is not identical between the vertical height of quick shaft direction and the fragrant plant bar.
The described second ladder catoptron 4 be positioned at stack shape ladder catoptron 2 directly over, include n catoptron, n catoptron is in the distance of the d4 that staggers before and after successively on the optical axis direction of the second ladder catoptron, 4 reflections, before and after the stagger degree of depth of ladder identical with each the minute surface width that stacks shape ladder catoptron 2, each reflecting surface of the second ladder catoptron 4 all becomes miter angle with quick shaft direction.Each catoptron is d3 along the width of its quick shaft direction, identical with the summation m * d2 of laser diode heap quick shaft direction spot size, also equal to stack the ladder degree of depth of shape ladder catoptron 2 on its optical axis direction, each catoptron in the second ladder catoptron 4 is corresponding with each the row catoptron that stacks shape ladder catoptron 2 respectively, and making like this can be through corresponding mirror reflects from the folded light beam of each row.
The span of described n is 1～50.
The span of described m is 1～50.
The beam shaping process will incide through the light beam of the heap of the laser diode behind the collimation and stack shape ladder catoptron 2, through with after its slow-axis direction becomes the corresponding direct reflection of 45 degree, light beam is along its quick shaft direction transmission, eliminated because the dark space that the heat sink thickness of fragrant plant bar causes, and the light beam on its slow-axis direction is divided into the n section, is incided the second ladder catoptron 4 once more by the n section light beam after cutting apart.Each reflecting surface in the second ladder catoptron 4 becomes 45 degree with its quick shaft direction, make the n section light beam that is stacked after shape ladder catoptron 2 is cut apart rotate 90 degree, reaches the purpose of beam shaping.Light beam after the shaping is collimated with cylindrical mirror, be coupled in the multimode optical fiber by focusing system again.
Principle of the present invention is: at first each array of stacking of laser diode all passes through fast axis collimation, since the position of m fragrant plant bar respectively with stack shape ladder catoptron 2 in the position of the terraced catoptron of m row order corresponding, so pass through m mirror reflects respectively from the light beam of m fragrant plant bar; Owing to stack staggered before and after on its optical axis direction Z2 distance of d3 of shape ladder catoptron 2, then all be divided into the n section from light beam each fragrant plant bar, on slow-axis direction, this n section light beam is stacked the degree of 45 in the shape ladder catoptron 2 mirror reflects to quick shaft direction; Again since stack between the every capable catoptron in the shape ladder catoptron 2 along height heat sink between the vertical height of quick shaft direction and the fragrant plant bar identical, so eliminated between the fragrant plant bar because the dark space that heat sink thickness causes through the light beam that stacks after 2 reflections of shape catoptron.The n section light beam of eliminating the dark space on quick shaft direction is again through 4 reflections of the second ladder catoptron, the width of each catoptron in the second ladder catoptron 4 is identical with the width of every row ladder catoptron in stacking catoptron 2, and the position is corresponding one by one, so from the light beam that stacks the every row catoptron in the shape catoptron 2 respectively by the mirror reflects corresponding in the second ladder catoptron 4 with it, again because the direction of n catoptron in the second ladder catoptron 2 becomes 45 degree with its quick shaft direction, turn 90 degrees so after the reflection light beam revolved, the hot spot that obtains at last is through resetting, beam parameter product increases n doubly on quick shaft direction, and beam parameter product has reduced 1/n doubly on slow-axis direction, makes beam parameter product reach balanced on both direction.The shaping light beam because second ladder catoptron becomes 45 degree with fast axle, so the collimation cylindrical mirror also becomes 45 degree with the beam Propagation direction, focuses on very little hot spot through focus lamp through the cylindrical mirror collimation at last, is coupled in the multimode optical fiber.
The present invention adopts the beam shaping that stacks shape ladder catoptron and ladder catoptron realization high power laser diode heap, and eliminated the dark space between the fragrant plant bar, directly improved the beam quality of high power semiconductor laser diode heap, the shaping light beam can be directly coupled in the multimode optical fiber after focusing on through collimation.
Description of drawings
Fig. 1 realizes the method for shaping high power caser diode pile light beam and the stereographic map of device
Fig. 2 realizes the method for shaping high power caser diode pile light beam and the front elevation of device
Fig. 3 realizes the method for shaping high power caser diode pile light beam and the left view of device
Light spot shape before and after Fig. 4 shaping high power caser diode pile light beam
Among the figure: 1, the hot spot behind the fast axis collimation, 2, stack shape ladder catoptron, 3,45 degree catoptrons, 4, the second ladder catoptron, 5, the hot spot behind the beam shaping.
Embodiment
Describe present embodiment in detail below in conjunction with Fig. 1～Fig. 4.
As shown in Figure 1, laser diode heap is made up of 5 fragrant plant bars, and through behind the fast axis collimation, the spot size 1 of each fragrant plant bar is approximately 10mm*0.8mm, i.e. d5=10mm, and d2=0.8mm, soon, the slow axis beam parameter product is approximately 2mm.mrad, 500mm.mrad.Heat sink thickness between the laser diode heap fragrant plant bar is d1=1.8mm, and then fast, the slow axis beam parameter product of laser diode heap are approximately 22mm.mrad, 500mm.mrad.It is all identical with laser diode heap hot spot along the height of the width of slow-axis direction and quick shaft direction to stack shape ladder catoptron 2, i.e. d5=10mm, d6=5d2+4d1=11.2mm.The distance that 6 catoptrons in every row all stagger before and after successively along the transmission direction Z2 of light equals the summation of laser diode heap quick shaft direction spot size, i.e. d3=5d2=4mm, and the width of every row ladder catoptron on optical axis direction Z2 also is d3=4mm.Each reflecting surface that stacks in the shape ladder catoptron 2 all becomes 45 degree with corresponding fragrant plant bar slow-axis direction, and the height of each catoptron on quick shaft direction is identical with the spot size of each fragrant plant bar quick shaft direction, is 0.8mm.The width of luminous zone is not identical between the minute surface width d4=10/6=1.7mm of each catoptron, the vertical height between each row order ladder catoptron and fragrant plant bar, i.e. d1=1.8mm.
5 light that the fragrant plant bar sends from the laser diode heap, through behind the fast axis collimation, be incident to and stack shape ladder catoptron 2, accurately adjust and stack shape ladder catoptron 2, make the light of each fragrant plant bar reflex to quick shaft direction by the degree of 45 in every row catoptron 3,5 positions because the catoptron in every row staggers before and after all, so the light beam on slow-axis direction is divided into 6 sections, every section width is d4=10/6=1.7mm.Accurately regulate second ladder catoptron 4 again, second ladder catoptron 4 includes 6 catoptrons, 6 catoptrons stagger before and after successively on the optical axis direction Z4 of the second ladder catoptron, 4 reflections apart from d4=10/6=1.7mm, the reflecting surface of each catoptron all becomes miter angle with quick shaft direction.The minute surface width d3=5d2=4mm of each catoptron, make each catoptron corresponding with each column position in stacking shape ladder catoptron 2, then the divided light beam of slow axis is by 4 reflections of second group of ladder catoptron, making light beam revolve turn 90 degrees, spot size 5 behind the laser diode heap beam shaping is 1.7mm*24mm, and beam parameter product fast, slow axis is respectively 60mm.mrad and 82mm.mrad.Carefully regulate cylindrical mirror again and become 45 degree with the transmission direction of light, the angle of divergence of collimation slow-axis direction is at last by two gummed focus lamp coupled into optical fibres.
The every row catoptron that stacks in the shape ladder catoptron 2 in the present embodiment is processed separately, and staggering before and after the six row catoptrons after will processing then is fixed together.
Claims (3)
1. realize the device of shaping high power caser diode pile light beam, it is characterized in that: this device mainly includes the laser diode heap that contains m fragrant plant bar, stacks the shape ladder catoptron (2) and the second ladder catoptron (4) by what the capable n row of m catoptron was formed, each fragrant plant bar of laser diode heap is corresponding with the every capable catoptron that stacks shape ladder catoptron (2) respectively, the second ladder catoptron (4) be positioned at stack shape ladder catoptron (2) directly over; From each fragrant plant bar of laser diode heap, stacked shape ladder catoptron (2) through the hot spot (1) behind the fast axis collimation and reflexed to quick shaft direction, and on slow-axis direction, be divided into the n section, this n section light beam is reflected by the second ladder catoptron (4), and make light beam revolve to turn 90 degrees, realize beam shaping;
The described shape ladder catoptron (2) that stacks is a ladder reflection mirror array that the capable n of m is listed as, it is identical that the fragrant plant bar of line number m and high power laser diode heap is counted m, and it is all identical with laser diode heap hot spot along the height of the width of slow-axis direction and quick shaft direction to stack shape ladder catoptron (2); Wherein, all stagger before and after the transmission direction of the light successively distance of d3 of n in an every row catoptron, m in an every row catoptron is all along stagger the up and down successively distance of d1 of quick shaft direction, be expert at, row all form the ladder catoptron, the reflecting surface of m * n catoptron all becomes 45 degree with corresponding fragrant plant bar slow-axis direction, the height of each catoptron on quick shaft direction is identical with the spot size of each fragrant plant bar quick shaft direction, the minute surface width of each catoptron is d4, the ladder degree of depth that catoptron in every row staggers along the optical transmission direction front and back equals the summation m * d2 of laser diode heap quick shaft direction spot size, the width of every row ladder catoptron on optical axis direction also is d3, between each row order ladder catoptron along the width of luminous zone is not identical between the vertical height of quick shaft direction and the fragrant plant bar;
The described second ladder catoptron (4) be positioned at stack shape ladder catoptron (2) directly over, include n catoptron, n catoptron is in the distance of the d4 that staggers before and after successively on the optical axis direction of the second ladder catoptron (4) reflection, before and after the stagger degree of depth of ladder identical with each the minute surface width that stacks shape ladder catoptron (2), each reflecting surface of the second ladder catoptron (4) all becomes miter angle with quick shaft direction, each catoptron is d3 along the width of its quick shaft direction, identical with the summation m * d2 of laser diode heap quick shaft direction spot size, also equal to stack the ladder degree of depth of shape ladder catoptron (2) on its optical axis direction Z2, each catoptron in the second ladder catoptron (4) is corresponding with each the row catoptron that stacks shape ladder catoptron (2) respectively, and making like this can be through corresponding mirror reflects from the folded light beam of each row.
2. the device of realization shaping high power caser diode pile light beam according to claim 1 is characterized in that: the span of described n is 1～50.
3. the device of realization shaping high power caser diode pile light beam according to claim 1 is characterized in that: the span of described m is 1～50.
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| JP4711155B2 (en) * | 2009-06-30 | 2011-06-29 | カシオ計算機株式会社 | Light source device and projector |
| CN101833150B (en) * | 2010-05-18 | 2011-06-29 | 中国科学院长春光学精密机械与物理研究所 | Fiber coupling module of high-power semiconductor laser |
| WO2012017263A1 (en) * | 2010-08-06 | 2012-02-09 | Fci | Optical coupling system |
| CN104868362A (en) | 2011-10-11 | 2015-08-26 | 深圳市光峰光电技术有限公司 | Light source system and laser light source |
| JP5914808B2 (en) * | 2011-12-21 | 2016-05-11 | パナソニックＩｐマネジメント株式会社 | Light source device and projection display device |
| CN103472582A (en) * | 2012-06-07 | 2013-12-25 | 苏州长光华芯光电技术有限公司 | Light beam shaping device for realizing high-power and high-brightness semiconductor laser |
| CN104880829A (en) * | 2015-06-16 | 2015-09-02 | 吕志伟 | Light-beam translation reflector and method employing light-beam translation reflector to achieve light beam translation |
| CN105300518B (en) * | 2015-11-18 | 2017-10-20 | 中国工程物理研究院激光聚变研究中心 | The method for realizing length scanning comprising angle plane grating monochromator more than glancing incidence |
| CN106253048B (en) * | 2016-08-30 | 2022-03-22 | 西安炬光科技股份有限公司 | High-power semiconductor laser system for realizing uniform light spots |
| CN107346062B (en) * | 2017-08-04 | 2023-05-02 | 大连理工大学 | Method for collimating diode laser beam |
| CN110161511B (en) * | 2019-04-30 | 2021-11-19 | 探维科技(北京)有限公司 | Laser radar system |
| WO2023283769A1 (en) * | 2021-07-12 | 2023-01-19 | 广东粤港澳大湾区硬科技创新研究院 | Laser beam combining device, combined step mirror thereof, and method for calculating fill rate |
| CN114006269A (en) * | 2021-12-29 | 2022-02-01 | 深圳市星汉激光科技股份有限公司 | Direct output system of high-power semiconductor laser and polarization beam combining structure thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005019900A1 (en) * | 2003-08-20 | 2005-03-03 | Carl Zeiss Sms Gmbh | Coherency reducer having a stepped mirror and method for producing a coherency reducer |
| CN1664688A (en) * | 2005-03-29 | 2005-09-07 | 中国科学院光电技术研究所 | Method for realizing strip array semiconductor laser shaping by catadioptric prism stack |
-
2007
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005019900A1 (en) * | 2003-08-20 | 2005-03-03 | Carl Zeiss Sms Gmbh | Coherency reducer having a stepped mirror and method for producing a coherency reducer |
| CN1664688A (en) * | 2005-03-29 | 2005-09-07 | 中国科学院光电技术研究所 | Method for realizing strip array semiconductor laser shaping by catadioptric prism stack |
Non-Patent Citations (4)
| Title |
|---|
| Beam shaping and fibre coupling of high-powerdiodelaserarrays. B.Ehlers,K.Du,M.Baumann,H.-G.Treusch,P.Loosen,R.Poprawe.SPIE,Vol.Vol.3097 . 1997 |
| Beam shaping and fibre coupling of high-powerdiodelaserarrays. B.Ehlers,K.Du,M.Baumann,H.-G.Treusch,P.Loosen,R.Poprawe.SPIE,Vol.Vol.3097 . 1997 * |
| 激光二极管光束整形技术. 郭明秀，沈冠群，陆雨田.激光技术，第27卷第4期. 2003 |
| 激光二极管光束整形技术. 郭明秀，沈冠群，陆雨田.激光技术，第27卷第4期. 2003 * |
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