CN208548372U - A kind of double-junction solar battery - Google Patents
A kind of double-junction solar battery Download PDFInfo
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- CN208548372U CN208548372U CN201821023739.4U CN201821023739U CN208548372U CN 208548372 U CN208548372 U CN 208548372U CN 201821023739 U CN201821023739 U CN 201821023739U CN 208548372 U CN208548372 U CN 208548372U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The utility model discloses a kind of double-junction solar batteries, the double-junction solar battery successively includes preceding electrode from top to bottom, anti-reflection layer, upper battery, boundary layer, lower battery, back electrode, equidistant groove body is offered on the anti-reflection layer, electrode before being formed on groove body, the upper battery is perovskite structure, the upper battery is followed successively by TCO transparency conducting layer from top to bottom, electron transfer layer, perovskite-based bottom, hole transmission layer, the lower battery is silicon based hetero-junction structure, the lower battery is followed successively by preceding electric field from top to bottom, N-type silicon chip substrate, intrinsic amorphous silicon passivation layer, doped amorphous silicon emitter layer, lower TCO transparency conducting layer.The upper and lower inside battery series connection of the utility model can promote open-circuit voltage, upper and lower two batteries absorb the sunlight of different wavelength range respectively, the effective absorption for increasing inside battery sunlight makes it have more the market competitiveness to further improve the transfer efficiency of hetero-junction solar cell.
Description
Technical field
The utility model relates to crystal silicon solar energy battery technical field more particularly to a kind of double-junction solar batteries.
Background technique
Currently, high performance solar batteries are a hot spots of numerous photovoltaic manufacturers research, including PERC battery, MWT battery,
IBC battery and HIT battery etc..Wherein HIT battery is obtained with advantages such as its Efficient Conversion efficiency, low temperature process, suitable sheets
The special favor of numerous mechanisms and manufacturing enterprise is obtained, research and development enthusiasm remains high always.
Wherein HIT battery uses N-type silicon chip, forms pyramid flannelette, this layer of amorphous silicon of double-sided deposition by lye making herbs into wool
Film, doped amorphous silicon film and transparent conductive film layer, to be respectively formed passivation layer, back surface field, emitter and anti-reflection are led
Electric layer, finally prints silver paste or electro-coppering grid form electrode.The highest transfer efficiency of crystal silicon single junction cell has been broken through at present
26%, substantially fastly close to the theoretical limit of crystal silicon battery, then up raising efficiency becomes extremely difficult.And binode battery be can
To obtain higher open-circuit voltage；Upper and lower battery absorbs the sunlight of different wavelength range respectively, it is hereby achieved that higher
Photoelectric conversion efficiency.
Utility model content
The purpose of the utility model is to provide a kind of production methods of double-junction solar battery, have upper and lower two
Sub- battery, upper and lower inside battery series connection can promote open-circuit voltage, and upper and lower two batteries absorb different wavelength range respectively
Sunlight increases effective absorption of inside battery sunlight, short-circuit current density is made to have biggish promotion, to further mention
The transfer efficiency for having risen hetero-junction solar cell, makes it have more the market competitiveness.
In order to solve the above technical problems, the technical scheme adopted by the utility model is: a kind of double-junction solar battery, institute
State double-junction solar battery successively includes preceding electrode, anti-reflection layer, upper battery, boundary layer, lower battery, back electrode, institute from top to bottom
It states and offers equidistant groove body using laser on anti-reflection layer, the preceding electrode of photoinduction plating production, institute are formed by groove body
Stating battery is perovskite structure, and the boundary layer is set between upper battery and lower battery, and the upper battery is from top to bottom successively
For upper TCO transparency conducting layer, electron transfer layer (ETL), perovskite-based bottom, hole transmission layer (ETL), the lower battery is silicon
Base heterojunction structure, the lower battery are followed successively by preceding electric field, N-type silicon chip substrate, intrinsic amorphous silicon passivation layer, doping from top to bottom
Amorphous silicon emitter layer, lower TCO transparency conducting layer.
Further, the preceding electrode is ambrose alloy silver metal lamination, width 20-40um.
Further, the anti-reflection layer is magnesium fluoride film, with a thickness of 80-120nm.
Further, the boundary layer of the upper and lower battery is SiO2Or SiN film, with a thickness of 0.1-2nm.
Further, the back electrode is the copper silver metal lamination formed using magnetron sputtering mode.
By the above-mentioned description to the utility model structure it is found that compared to the prior art, the utility model has following excellent
Point:
The utility model uses base material of the N-type silicon chip as lower battery, sequentially forms intrinsic amorphous silicon in shady face
Layer, doped amorphous silicon emitter layer, lower TCO transparency conducting layer and metal laminated back electrode.It is electric before light-receiving surface sequentially forms
Boundary layer, hole transmission layer HTL, perovskite-based bottom, electron transfer layer ETL, upper TCO electrically conducting transparent between field, upper and lower battery
Layer, anti-reflection layer and metal laminated preceding electrode.Binode battery has upper and lower two sub- batteries, and upper and lower inside battery series connection can
To promote open-circuit voltage；Upper and lower two batteries absorb the sunlight of different wavelength range respectively, increase inside battery sunlight
Effective absorption, so that short-circuit current density is had biggish promotion.In addition, using magnesium fluoride film as anti-reflection layer, it is superimposed TCO film
Double layer antireflection layer is formed, light reflection is effectively reduced.Laser slotting technology is used simultaneously, effectively controls the width of front electrode
Degree, makes front electrode graph thinning, reduces metal shielded area, improve short-circuit current density, to improve turning for battery
Efficiency is changed, keeps HIT battery more competitive.
Detailed description of the invention
The attached drawing constituted part of this application is used to provide a further understanding of the present invention, the utility model
Illustrative embodiments and their description are not constituteed improper limits to the present invention for explaining the utility model.In attached drawing
In:
Fig. 1 is a kind of structural schematic diagram of double-junction solar battery of the utility model.
Specific embodiment
In order to make the purpose of the utility model, technical solutions and advantages more clearly understood, below in conjunction with attached drawing and implementation
Example, the present invention will be further described in detail.It should be appreciated that specific embodiment described herein is only used to explain
The utility model is not used to limit the utility model.
Embodiment
As shown in Figure 1, a kind of double-junction solar battery, it is characterised in that: the double-junction solar battery from top to bottom according to
Secondary includes preceding electrode 1, anti-reflection layer 2, upper battery 3, boundary layer 4, lower battery 5, back electrode 6, is opened on the anti-reflection layer 2 using laser
Equipped with equidistant groove body 7, the preceding electrode 1 of photoinduction plating production is formed by groove body 7, the upper battery 3 is perovskite
Structure, the boundary layer 4 are set between upper battery 3 and lower battery 5, and the upper battery 3 is followed successively by that TCO is transparent to be led from top to bottom
Electric layer 31, electron transfer layer 32, perovskite-based bottom 33, hole transmission layer 34, the lower battery 5 are silicon based hetero-junction structure,
The lower battery 5 is followed successively by preceding electric field 51, N-type silicon chip substrate 52, intrinsic amorphous silicon passivation layer 53, doped amorphous silicon from top to bottom
Emitter layer 54, lower TCO transparency conducting layer 55.
Wherein, the N-type silicon chip 52 can remove cutting damage layer using alkalinity or acid solution etch polishing.The alkali
Property solution be KOH solution；Acid solution is HF acid and HNO3The mixed solution of acid.The intrinsic amorphous silicon passivation layer 53 and doping
Amorphous silicon emitter layer 54 is formed using CVD low temperature depositing, and intrinsic amorphous silicon passivation layer 53 is with a thickness of 10nm, doped amorphous silicon
Emitter layer 54 is with a thickness of 30nm.The transparent conductive film layer is tin indium oxide, with a thickness of 80nm；The back electrode 6 is to adopt
The copper silver lamination formed with magnetron sputtering mode.The preceding electric field 51 is to be formed using ion implanting P elements to silicon chip surface
N+Layer.The boundary layer 4 is SiO2Film, with a thickness of 0.5nm.The hole transmission layer 34 is NiOXNano particle, the electronics
Transmitting layer 32 is TiO2Nano particle, the perovskite-based bottom are lead iodide methylamine.The anti-reflection layer 2 is magnesium fluoride film,
With a thickness of 100nm.The preceding electrode 1 is ambrose alloy silver metal lamination, width 30um.
The utility model uses base material of the N-type silicon chip as lower battery, sequentially forms intrinsic amorphous silicon in shady face
Layer, doped amorphous silicon emitter layer, lower TCO transparency conducting layer and metal laminated back electrode.It is electric before light-receiving surface sequentially forms
Boundary layer, hole transmission layer HTL, perovskite-based bottom, electron transfer layer ETL, upper TCO electrically conducting transparent between field, upper and lower battery
Layer, anti-reflection layer and metal laminated preceding electrode.Binode battery has upper and lower two sub- batteries, and upper and lower inside battery series connection can
To promote open-circuit voltage；Upper and lower two batteries absorb the sunlight of different wavelength range respectively, increase inside battery sunlight
Effective absorption, so that short-circuit current density is had biggish promotion.In addition, using magnesium fluoride film as anti-reflection layer, it is superimposed TCO film
Double layer antireflection layer is formed, light reflection is effectively reduced.Laser slotting technology is used simultaneously, effectively controls the width of front electrode
Degree, makes front electrode graph thinning, reduces metal shielded area, improve short-circuit current density, to improve turning for battery
Efficiency is changed, keeps HIT battery more competitive.
The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this
Made any modifications, equivalent replacements, and improvements etc., should be included in the utility model within the spirit and principle of utility model
Protection scope within.
Claims (5)
1. a kind of double-junction solar battery, it is characterised in that: the double-junction solar battery successively includes preceding electrode from top to bottom
(1), anti-reflection layer (2), upper battery (3), boundary layer (4), lower battery (5), back electrode (6) use laser on the anti-reflection layer (2)
It offers equidistant groove body (7), the preceding electrode (1) of photoinduction plating production, the upper battery is formed by groove body (7)
It (3) is perovskite structure, the boundary layer (4) is set between upper battery (3) and lower battery (5), and the upper battery (3) is from upper past
Under be followed successively by TCO transparency conducting layer (31), electron transfer layer (32), perovskite-based bottom (33), hole transmission layer (34), institute
Stating lower battery (5) is silicon based hetero-junction structure, and the lower battery (5) is followed successively by preceding electric field (51), N-type silicon chip substrate from top to bottom
(52), intrinsic amorphous silicon passivation layer (53), doped amorphous silicon emitter layer (54), lower TCO transparency conducting layer (55).
2. a kind of double-junction solar battery according to claim 1, it is characterised in that: the preceding electrode (1) is ambrose alloy silver gold
Belong to lamination, width 20-40um.
3. a kind of double-junction solar battery according to claim 1, it is characterised in that: the anti-reflection layer (2) is that magnesium fluoride is thin
Film, with a thickness of 80-120nm.
4. a kind of double-junction solar battery according to claim 1, it is characterised in that: the boundary layer (4) of the upper and lower battery
For SiO2Or SiN film, with a thickness of 0.1-2nm.
5. a kind of double-junction solar battery according to claim 1, it is characterised in that: the back electrode (6) is using magnetic control
The copper silver metal lamination that sputtering mode is formed.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821023739.4U CN208548372U (en) | 2018-06-29 | 2018-06-29 | A kind of double-junction solar battery |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821023739.4U CN208548372U (en) | 2018-06-29 | 2018-06-29 | A kind of double-junction solar battery |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110649111A (en) * | 2019-09-19 | 2020-01-03 | 苏州拓升智能装备有限公司 | Laminated solar cell |
| CN110767777A (en) * | 2019-11-05 | 2020-02-07 | 东方日升（常州）新能源有限公司 | Preparation method of low-cost high-efficiency laminated solar cell |
| CN114256387A (en) * | 2021-11-01 | 2022-03-29 | 南京日托光伏新能源有限公司 | Preparation method of perovskite-heterojunction three-end MWT structure laminated solar cell |
| WO2023039967A1 (en) * | 2021-09-16 | 2023-03-23 | 北京载诚科技有限公司 | Laminated solar cell |
| EP4174962A4 (en) * | 2021-09-16 | 2023-05-31 | Beijing Zenithnano Technology Co., Ltd. | Laminated solar cell |
-
2018
- 2018-06-29 CN CN201821023739.4U patent/CN208548372U/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110649111A (en) * | 2019-09-19 | 2020-01-03 | 苏州拓升智能装备有限公司 | Laminated solar cell |
| CN110767777A (en) * | 2019-11-05 | 2020-02-07 | 东方日升（常州）新能源有限公司 | Preparation method of low-cost high-efficiency laminated solar cell |
| WO2023039967A1 (en) * | 2021-09-16 | 2023-03-23 | 北京载诚科技有限公司 | Laminated solar cell |
| EP4174914A4 (en) * | 2021-09-16 | 2023-05-31 | Beijing Zenithnano Technology Co., Ltd. | Laminated solar cell |
| EP4174962A4 (en) * | 2021-09-16 | 2023-05-31 | Beijing Zenithnano Technology Co., Ltd. | Laminated solar cell |
| US12125931B2 (en) | 2021-09-16 | 2024-10-22 | Beijing Zenithnano Technology Co., Ltd. | Tandem solar cell |
| US12125932B2 (en) | 2021-09-16 | 2024-10-22 | Beijing Zenithnano Technology Co., Ltd. | Stacked solar cell |
| CN114256387A (en) * | 2021-11-01 | 2022-03-29 | 南京日托光伏新能源有限公司 | Preparation method of perovskite-heterojunction three-end MWT structure laminated solar cell |
| CN114256387B (en) * | 2021-11-01 | 2023-09-05 | 江苏日托光伏科技股份有限公司 | Preparation method of perovskite-heterojunction three-terminal MWT structure laminated solar cell |
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