CN207529943U - A kind of solar energy hetero-junction solar cell - Google Patents
A kind of solar energy hetero-junction solar cell Download PDFInfo
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- CN207529943U CN207529943U CN201721807103.4U CN201721807103U CN207529943U CN 207529943 U CN207529943 U CN 207529943U CN 201721807103 U CN201721807103 U CN 201721807103U CN 207529943 U CN207529943 U CN 207529943U
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Abstract
A kind of solar energy hetero-junction solar cell, the solar energy hetero-junction solar cell are arranged on the two sides of the solar energy hetero-junction solar cell, and including the first not water mixing ITO layer, water mixing transparent conductive layer and the second not water mixing ITO layer including lamination ITO, the lamination ITO.The excellent optical performance for the solar energy hetero-junction solar cell that the application provides, and each layer contact in battery is good, battery conducting is smooth.
Description
Technical field
This application involves but be not limited to heterojunction solar battery technical field, be more particularly without limitation, to a kind of solar energy
Hetero-junction solar cell.
Background technology
In heterojunction solar battery (HJT) field, ito thin film plays an important role, it is not only responsible for collecting photoproduction
Carrier, while most solar energies also to be allowed smoothly to enter in cell body.The ito thin film of good properties will have high saturating
Light rate and good electric conductivity；In addition, in solar device, ITO is a part for battery.In terms of device optical, ITO is
The sunken light anti-reflection layer of battery；In terms of device electricity, the quality of ITO properties can influence entire battery and be matched in energy band, be drawn
Play the variation of battery open circuit voltage and fill factor.
At present, the method for preparing ITO materials is divided into two kinds of techniques of low temperature (room temperature) and high temperature (180 DEG C of ＞).According to being passed through
The difference of reaction gas, low temperature (room temperature) technique can be divided into again common process (in technical process, being only passed through argon gas and oxygen) and
Hydrogen loading technique (is passed through argon gas, oxygen and hydrogen to participate in reacting) during room temperature deposition ITO.
Therefore, it is necessary to research and develop a kind of solar energy hetero-junction solar cell comprising ito thin film for having more preferable performance.
Invention content
It is the general introduction of the theme to being described in detail herein below.This general introduction is not the protection model in order to limit claim
It encloses.
Present inventor is deeply found that existing ITO materials during heterojunction solar battery is studied
Preparation method there are problems that, be summarized as follows：
ITO prepared by common process (in technical process, being only passed through argon gas and oxygen) under normal circumstances, at room temperature is micro-
The material of crystalline state, the carrier concentration of this crystallite state ITO materials is high, the light transmittance slightly worse one of corresponding crystallite state ITO materials
A bit；But crystallite state ITO has good matching with doped amorphous silicon, and contact well can be realized with doped amorphous silicon layer.
Hydrogen loading technique (argon gas, oxygen and hydrogen are passed through during room temperature deposition ITO to participate in reacting) at room temperature
The crystallization degree of ITO materials can be changed so that ITO is changed into non-by crystallite state prepared by original common process (obstructed hydrogen)
Crystalline state.The light transmittance for the polycrystalline state ITO materials that the light transmission of this amorphous state ITO materials is excellent and prepared by high-temperature technology is several
It is equally good.But the refractive index (n) of amorphous state ITO materials prepared by hydrogen loading technique is bigger, as the transparent of solar cell
During conductive layer, there is no problem in terms of light transmittance, but sunken light anti-reflection effect can be slightly weaker.
The ITO materials prepared under high temperature are polycrystalline state.The process controllability of high-temperature technology, the ITO materials prepared are led
Electrical and light transmittance can meet the requirement of solar cell.The current this method for preparing ITO materials by most enterprises with
Research unit is used.However, this method is nor perfect, in technique and battery structure design aspect, there is also very big
Optimize space.
The core of solar battery structure is 4 layers of amorphous silicon material：Intrinsic amorphous silicon passivation layer (2,4), the first non-crystalline silicon
Doped layer (3), the second non-crystalline silicon doped layer (5), wherein, intrinsic amorphous silicon passivation layer (2,4) is as passivation layer, the first non-crystalline silicon
Doped layer (3) and the second non-crystalline silicon doped layer (5) are used separately as back surface field and battery emitter.The thickness of this 4 layers of amorphous silicon layers is all
No more than 20nm, and property is relatively unstable.If it is put into hot environment by the battery after prepared by 4 layers of non-crystalline silicon has been completed
In, the property of non-crystalline silicon is extremely easily varied.
At present in the preparation flow of the solar cell of mainstream, battery is first completed 4 layers of non-crystalline silicon and is prepared, and then can enter
ITO depositing operation flows.Low temperature common process, hydrogen loading technique or high-temperature deposition process can be selected in deposition ITO.From effect
It sees, the battery current that low temperature common process prepares ITO is low, and the battery fill factor that hydrogen loading technique prepares ITO is low, high-temperature technology system
It is not high that standby ITO batteries open pressure.Especially in high temperature ITO depositing operations, it can be passed through a large amount of oxygen in cavity, 4 layers of battery
Amorphous silicon layer is easy to be aoxidized in high temperature ITO deposition process；In addition there are many high energy in the process cavity of deposition ITO
Plasma, amorphous silicon membrane are easier to be aoxidized and destroyed.
The method that another kind prepares ITO is water mixing technique：In the technical process for preparing ITO, it is passed through a certain amount of steam
To participate in reacting.In the application, transparent conductive layer prepared by water mixing technique is defined as water mixing transparent conductive layer, is not mixed
Transparent conductive layer prepared by hydraulic art is defined as not water mixing transparent conductive layer.The inventors of the present application found that water mixing ITO
The mobility of transparency conducting layer is high, and carrier concentration is low, has a relatively good photopermeability energy, but with battery doping amorphous silicon layer
There are the problems such as work function matching, electrode contact with silk-screen printing silver grid.If all using water mixing transparent conduction
Transparency conducting layer of the layer as battery, the short circuit current of battery is pretty good, but open-circuit voltage and fill factor are relatively low.
On the basis of deeply probing into problem of the existing technology, present inventor creatively proposes ratio
Design compared with optimization is：After battery completes 4 layers of amorphous silicon deposition, on the first surface and second surface of battery, sink successively
Product crystallite state not water mixing ITO (room temperature, common process), amorphous state water mixing ITO (room temperature, water mixing technique) and polycrystalline state not water mixing
ITO (high-temperature technology).The design of this optimization, the single technique used with current most research and development and production mechanism (non-lamination,
Single structure, the ITO that the one of which technique in above-mentioned three kinds of technique is only selected to prepare) prepare ITO method it is different, so as to
Improve the efficiency of battery.
This application provides the sun a kind of while including water mixing transparent conductive layer and not water mixing transparent conductive layer
Can hetero-junction solar cell, so as to efficiently solve, ITO conductive layer light transmittance is not high, poor, the high temperature deposition ITO processes that fall into light anti-reflection effect
The problems such as middle amorphous silicon film is aoxidized.
Specifically, this application provides a kind of solar energy hetero-junction solar cell, the solar energy hetero-junction solar cell includes lamination
ITO, the lamination ITO are separately positioned on the two sides of the solar energy hetero-junction solar cell, and including the first not water mixing ITO layer,
Water mixing transparent conductive layer and the second not water mixing ITO layer.
In some embodiments, in the lamination ITO being equipped on the solar energy hetero-junction solar cell is per one side：Along separate
The direction of the solar energy hetero-junction solar cell, the first not water mixing ITO layer, the water mixing transparent conductive layer and described
Two not water mixing ITO layers are sequentially overlapped setting.
In some embodiments, the thickness of the water mixing transparent conductive layer can be 30-50nm.
In some embodiments, the first not water mixing ITO layer can be crystallite state ITO layer, and thickness can be 2-
3nm。
In some embodiments, the second not water mixing ITO layer can be polycrystalline state ITO layer, and thickness can be 30-
50nm。
In some embodiments, the solar energy hetero-junction solar cell can also include monocrystalline silicon piece, the first intrinsic amorphous
Silicon passivation layer, the second intrinsic amorphous silicon passivation layer, the first non-crystalline silicon doped layer, the second non-crystalline silicon doped layer, first electrode and
Two electrodes.
In some embodiments, the solar energy hetero-junction solar cell can include first electrode, fold successively from top to bottom
It is the second not water mixing ITO layer, the water mixing transparent conductive layer and the first not water mixing ITO layer of layer ITO, first non-
Doped polycrystal silicon layer, the first intrinsic amorphous silicon passivation layer, monocrystalline silicon piece, the second intrinsic amorphous silicon passivation layer, the doping of the second non-crystalline silicon
Layer, lamination ITO the first not water mixing ITO layer, the water mixing transparent conductive layer and the second not water mixing ITO layer and
Second electrode.
In some embodiments, the monocrystalline silicon piece can be N-shaped monocrystalline silicon piece, and thickness can be 50-300 μm.
In some embodiments, the described first intrinsic amorphous silicon passivation layer and the second intrinsic amorphous silicon passivation layer
Thickness can be 1-20nm.
In some embodiments, the thickness of the first non-crystalline silicon doped layer and the second non-crystalline silicon doped layer can be with
It is 3-20nm.
In some embodiments, the first non-crystalline silicon doped layer can be P-type non-crystalline silicon doped layer, and described second is non-
Doped polycrystal silicon layer can be N-type non-crystalline silicon doped layer.
In some embodiments, the first non-crystalline silicon doped layer can be N-type non-crystalline silicon doped layer, and described second is non-
Doped polycrystal silicon layer can be P-type non-crystalline silicon doped layer.
The solar energy hetero-junction solar cell that the application provides organically combines the advantage of 3 type ITO layers.Optically
With two-fold advantage：Agent structure (larger 2 layers of thickness, i.e. the polycrystalline state ITO and non-of entire lamination transparent conductive material
Crystalline state ITO materials) it is the preferable ITO materials of light transmittance used.This design can maximumlly ensure the transmitance of light；
Moreover, the refractive index of polycrystalline state ITO, amorphous state ITO, crystallite state ITO layer has differences.It falls into light anti-reflection design, leads in optics
It crosses and combines this trilaminate material so that during light incidence, three layers of ITO materials changing from small to large by refractive index successively make battery
Sunken light effect enhanced, so as to make battery that there is the efficiency gain that significantly improves.
In electrical design, lamination ITO electrode is more advantageous to transporting for electric current：Crystallite state ITO materials (6 mark in Fig. 1)
Carrier concentration it is high, can realize contact well with doped amorphous silicon layer (3 and 5 mark in Fig. 1).Two layers of doped amorphous silicon layer
(the a-Si of P doping:The a-Si of H layers and B doping:H layers) on be respectively provided with the ITO layer of one layer of crystallite state, in this way can be to avoid two
Layer doped amorphous silicon layer and the ITO layer loose contact of water mixing so that battery conducting is smooth.
What the solar energy hetero-junction solar cell that the application provides can be aoxidized to avoid amorphous silicon film during high temperature deposition ITO
Problem：Deposition of microcrystalline state ITO layer and amorphous water mixing ITO layer at low temperature first, since cell piece is not heated, amorphous
The rate that silicon materials are reacted with process gas (oxygen) is slow, hence it is evident that reduces the problem of oxidation of amorphous silicon layer；And this two
Layer ITO materials can be used as protective layer, it is possible to prevente effectively from the problem of amorphous silicon layer is aoxidized during high temperature deposition ITO.
Other features and advantage will illustrate in the following description, also, partly become from specification
It obtains it is clear that being understood by implementing the application.The purpose of the application and other advantages can be by specification, rights
Specifically noted structure is realized and is obtained in claim and attached drawing.
Description of the drawings
Attached drawing is used for providing further understanding technical scheme, and a part for constitution instruction, with this
The embodiment of application for explaining the technical solution of the application, does not form the limitation to technical scheme together.
Fig. 1 is the structure diagram of the solar energy hetero-junction solar cell of the embodiment of the present application 1 or 2.
Fig. 2 is the H103 resin of different ITO samples, wherein " crystallite " represents the ITO prepared using low temperature common process,
" amorphous " represents the ITO prepared using low temperature hydrogen loading technique, and " polycrystalline " represents the ITO prepared using high-temperature technology, and " the application is real
Apply example " represent the lamination ITO of the embodiment of the present application 1.
Fig. 3 is the blown-up partial detail of the short-wave band of Fig. 2.
Fig. 4 is the blown-up partial detail of the long wave band of Fig. 2.
Fig. 5 is the silicon chip surface reflectance curve with different ITO, is carried wherein " crystallite " represents using low temperature routine work
ITO prepared by skill, " amorphous " represent the ITO for carrying and being prepared using low temperature hydrogen loading technique, and " polycrystalline ", which represents, to be carried using high temperature work
ITO prepared by skill, " the embodiment of the present application " represent the lamination ITO with the embodiment of the present application 1.
Fig. 6 is the blown-up partial detail of the short-wave band of Fig. 5.
Fig. 7 is the blown-up partial detail of the middle long wave band of Fig. 5.
Specific embodiment
Purpose, technical scheme and advantage to make the application are more clearly understood, below in conjunction with attached drawing to the application
Embodiment be described in detail.It should be noted that in the absence of conflict, in the embodiment and embodiment in the application
Feature mutually can arbitrarily combine.
Embodiment 1
The solar energy hetero-junction solar cell of the present embodiment be HJT hetero-junction solar cells, referring to Fig. 1, the HJT hetero-junction solar cells from
Include first electrode (9), the second not water mixing ITO layer (8), water mixing transparent conductive layer (7), the first not water mixing successively under
The a-Si of ITO layer (6), phosphorus doping:H (n) layers (3), the first intrinsic amorphous silicon passivation layer (2), N-shaped monocrystalline silicon piece (1), second
Levy amorphous silicon passivation layer (4), boron doped a-Si:H (p) layers (5), the first not water mixing ITO layer (6), water mixing transparent conductive layer
(7), the second not water mixing ITO layer (8) and second electrode (9 ').
The thickness of the N-shaped monocrystalline silicon piece (1) is 180 μm；
The thickness of the first intrinsic amorphous silicon passivation layer (2) is 5nm；
The thickness of the second intrinsic amorphous silicon passivation layer (4) is 5nm；
The a-Si of the phosphorus doping:The thickness of H (n) layers (3) is 7nm；
The boron doped a-Si:The thickness of H (p) layers (5) is 7nm；
The first not water mixing ITO layer (6) be crystallite state ITO layer, thickness 2nm；
ITO layer of the second not water mixing ITO layer (8) for polycrystalline state, thickness 30nm；
The thickness of the water mixing transparent conductive layer (7) is 50nm.
Wherein, the group of the first not water mixing ITO layer (6), water mixing transparent conductive layer (7) and the second not water mixing ITO layer (8)
It closes and is referred to as lamination ITO.
Following methods preparation may be used in the HJT hetero-junction solar cells of the present embodiment：
A) the first intrinsic amorphous is sequentially depositing on the first surface of N-shaped monocrystalline silicon piece (1) using chemical vapour deposition technique
The a-Si of silicon passivation layer (2) and phosphorus doping:H (n) layers (3) are sequentially depositing on the second surface of the N-shaped monocrystalline silicon piece (1)
Second intrinsic amorphous silicon passivation layer (4) and boron doped a-Si:H (p) layers (5)；
Wherein, the sedimentary condition of the first intrinsic amorphous silicon passivation layer (2) or the second intrinsic amorphous silicon passivation layer (4) is：Electricity
Source power is 350W, and the gas flow ratio (hydrogen dilution ratio) of hydrogen and silane is 12：1, pressure 0.7pa, underlayer temperature during deposition
240℃；Wherein, the a-Si of phosphorus doping:The sedimentary condition of H (n) layers (3) is：Power is 400W, hydrogen and silane gas stream
Amount is 4 than (hydrogen dilution ratio):1, the gas flow ratio (phosphorus silicon ratio) of phosphine and silane is 1:100, pressure 0.4pa, during deposition
Substrate temperature is 230 DEG C；Wherein boron doped a-Si:The sedimentary condition of H (p) layers (5) is：Power is 500W, hydrogen
Gas flow ratio (hydrogen dilution ratio) with silane is 5:1, the gas flow ratio (phosphorus silicon ratio) of phosphine and silane is 2:98, pressure is
0.3pa, substrate temperature is 200 DEG C during deposition；
B) argon gas and oxygen are passed through at ambient temperature, the gas flow ratio of argon gas and oxygen is set in 50:1, cavity pressure
It is strong to remain 0.3Pa, shielding power supply is opened, power density is 2W/cm2, using magnetron sputtering method in the phosphorus doping
a-Si:The first not water mixing ITO layer (6) is deposited on H (n) layers (3)；
C) using the technique identical with step b) in the boron doped a-Si:Described first is deposited on H (p) layers (5) not
Water mixing ITO layer (6)；
D) at ambient temperature, while it is passed through argon gas, oxygen and water vapour, the gas flow of argon gas, oxygen and water vapour
Than being set in 250:10:1, chamber pressure remains 0.4Pa, keeps the stability of flow of water vapour in 0.5sccm, opening sputtering electricity
Source, power density are 2.1W/cm2, using magnetron sputtering method, the N-shaped monocrystalline silicon piece (1) first surface it is described
Water mixing transparent conductive layer (7) is deposited in first not water mixing ITO layer (6)；
E) technique identical with step d) is used not mixed described the first of the second surface of the N-shaped monocrystalline silicon piece (1)
Water mixing transparent conductive layer (7) is deposited in water ITO layer (6)；
F) the N-shaped monocrystalline silicon piece (1) is heated to 185 DEG C, is passed through the gas flow of argon gas and oxygen, argon gas and oxygen
Than being set in 60:1, chamber pressure remains 0.5Pa, opens shielding power supply, and power density is 2W/cm2, splashed using magnetic control
It penetrates method and the second not water mixing is deposited on the water mixing transparent conductive layer (7) of the first surface of the N-shaped monocrystalline silicon piece (1)
ITO layer (8)；
G) it is saturating in the water mixing ITO of the second surface of the N-shaped monocrystalline silicon piece (1) using the technique identical with step f)
The second not water mixing ITO layer (8) is deposited on bright conductive layer (7)；
H) respectively in the first surface of the N-shaped monocrystalline silicon piece (1) and the second not water mixing ITO layer of second surface
(8) silk-screen printing first electrode (9) and second electrode (9 ') on.
It will be understood by those of ordinary skill in the art that although the preparation process of embodiment 1 is with step a)-h) it shows,
Be and non-limiting have to by a)-h) sequence go to prepare the solar energy hetero-junction solar cell of the present embodiment, for example, according to a), b),
D), sequence f), c), e), g), h) can also prepare the solar energy hetero-junction solar cell of the present embodiment.
Embodiment 2
The solar energy hetero-junction solar cell of the present embodiment be HJT hetero-junction solar cells, referring to Fig. 1, the HJT hetero-junction solar cells from
Include first electrode (9), the second not water mixing ITO layer (8), water mixing transparent conductive layer (7), the first not water mixing successively under
The a-Si of ITO layer (6), phosphorus doping:H (n) layers (3), the first intrinsic amorphous silicon passivation layer (2), N-shaped monocrystalline silicon piece (1), second
Levy amorphous silicon passivation layer (4), boron doped a-Si:H (p) layers (5), the first not water mixing ITO layer (6), water mixing transparent conductive layer
(7), the second not water mixing ITO layer (8) and second electrode (9 ').
The thickness of the N-shaped monocrystalline silicon piece (1) is 180 μm；
The thickness of the first intrinsic amorphous silicon passivation layer (2) is 10nm；
The thickness of the second intrinsic amorphous silicon passivation layer (4) is 10nm；
The a-Si of the phosphorus doping:The thickness of H (n) layers (3) is 20nm；
The boron doped a-Si:The thickness of H (p) layers (5) is 20nm；
The first not water mixing ITO layer (6) be crystallite state ITO layer, thickness 3nm；
ITO layer of the second not water mixing ITO layer (8) for polycrystalline state, thickness 40nm；
The thickness of the water mixing transparent conductive layer (7) is 40nm.
Following methods preparation may be used in the HJT hetero-junction solar cells of the present embodiment：
A) the first intrinsic amorphous is sequentially depositing on the first surface of N-shaped monocrystalline silicon piece (1) using chemical vapour deposition technique
The a-Si of silicon passivation layer (2) and phosphorus doping:H (n) layers (3) are sequentially depositing on the second surface of the N-shaped monocrystalline silicon piece (1)
Second intrinsic amorphous silicon passivation layer (4) and boron doped a-Si:H (p) layers (5)；
Wherein, the sedimentary condition of the first intrinsic amorphous silicon passivation layer (2) or the second intrinsic amorphous silicon passivation layer (4) is：Electricity
Source power is 380W, and hydrogen is 14 with silane gas flow-rate ratio (hydrogen dilution ratio)：1, pressure 0.7pa, underlayer temperature 220 during deposition
℃；The a-Si of phosphorus doping:The sedimentary condition of H (n) layers (3) is：Power is 400W, hydrogen and silane gas flow-rate ratio (hydrogen
Thinner ratio) it is 4:1, phosphine and silane gas flow-rate ratio (phosphorus silicon ratio) 1:100 pressure 0.6pa, 220 DEG C of underlayer temperature during deposition；
Wherein boron doped a-Si:The sedimentary condition of H (p) layers (5) is：Power is 450W, hydrogen and silane gas flow-rate ratio (hydrogen
Thinner ratio) it is 5:1, phosphine and silane gas flow-rate ratio (phosphorus silicon ratio) 1:100, pressure 0.3pa, 200 DEG C of underlayer temperature during deposition；
B) argon gas and oxygen are passed through at ambient temperature, the gas flow ratio of argon gas and oxygen is set in 20:1, cavity pressure
It is strong to remain 0.4Pa, shielding power supply is opened, power density is 1W/cm2, using magnetron sputtering method in the phosphorus doping
a-Si:The first not water mixing ITO layer (6) is deposited on H (n) layers (3)；
C) using the technique identical with step b) in the boron doped a-Si:Described first is deposited on H (p) layers (5) not
Water mixing ITO layer (6)；
D) at ambient temperature, while it is passed through argon gas, oxygen and water vapour, the gas flow of argon gas, oxygen and water vapour
Than being set in 300:10:1, chamber pressure remains 0.6Pa, keeps the stability of flow 1sccm of water vapour, opens shielding power supply,
Power density is 1W/cm2, using magnetron sputtering method, described the first of the first surface of the N-shaped monocrystalline silicon piece (1)
Water mixing transparent conductive layer (7) is deposited in not water mixing ITO layer (6)；
E) technique identical with step d) is used not mixed described the first of the second surface of the N-shaped monocrystalline silicon piece (1)
Water mixing transparent conductive layer (7) is deposited in water ITO layer (6)；
F) the N-shaped monocrystalline silicon piece (1) is heated to 190 DEG C, is passed through the gas flow of argon gas and oxygen, argon gas and oxygen
Than being set in 30:1, chamber pressure remains 0.3Pa, opens shielding power supply, and power density is 2W/cm2, splashed using magnetic control
It penetrates method and the second not water mixing is deposited on the water mixing transparent conductive layer (7) of the first surface of the N-shaped monocrystalline silicon piece (1)
ITO layer (8)；
G) it is saturating in the water mixing ITO of the second surface of the N-shaped monocrystalline silicon piece (1) using the technique identical with step f)
The second not water mixing ITO layer (8) is deposited on bright conductive layer (7)；
H) respectively in the first surface of the N-shaped monocrystalline silicon piece (1) and the second not water mixing ITO layer of second surface
(8) silk-screen printing first electrode (9) and second electrode (9 ') on.
Performance test
1st, the ITO and the transmitance of the lamination ITO of the embodiment of the present application that prepared by test conventional method, test result is see figure
2-4。
From Fig. 2-4 as can be seen that the transmitance of the lamination ITO of the embodiment of the present application is higher than using the preparation of low temperature common process
Crystallite ITO transmitance, prepared close to the amorphous ITO prepared using low temperature routine hydrogen loading technique and using high temperature common process
Poly-ITO transmitance.
2nd, the reflectivity of the silicon chip surface of the lamination ITO of ITO and the embodiment of the present application of the test with conventional method preparation,
Test result is see Fig. 5-7.
It is better that the lower representative of reflectivity values falls into light effect.From Fig. 5-7 as can be seen that the ITO's of the embodiment of the present application falls into
Light effect is better than the crystallite ITO prepared using low temperature common process, the amorphous ITO prepared using low temperature routine hydrogen loading technique and adopted
With the sunken light effect of poly-ITO prepared by high temperature common process.
3rd, the solar energy hetero-junction solar cell of test the embodiment of the present application 1 and the battery prepared using other single structures ITO
Efficiency, test result is see table 1 (parameter normalized) in table 1.
Table 1
As it can be seen from table 1 the efficiency of the solar energy hetero-junction solar cell of the embodiment of the present application 1 be substantially better than it is normal using low temperature
Advise the crystallite ITO of technique preparation, using the amorphous ITO of low temperature routine hydrogen loading technique preparation and using the preparation of high temperature common process
Efficiency is improved 3 percentage points or more by the efficiency of the battery prepared by poly-ITO.
Although the embodiment disclosed by the application is as above, the content only for ease of understanding the application and use
Embodiment is not limited to the application.Technical staff in any the application fields, is taken off not departing from the application
Under the premise of the spirit and scope of dew, any modification and variation, but the application can be carried out in the form and details of implementation
Scope of patent protection, still should be subject to the scope of the claims as defined in the appended claims.
Claims (11)
1. a kind of solar energy hetero-junction solar cell, which is characterized in that the solar energy hetero-junction solar cell includes lamination ITO, described folded
Layer ITO is separately positioned on the two sides of the solar energy hetero-junction solar cell, and the lamination ITO includes the first not water mixing ITO layer, water mixing
Transparent conductive layer and the second not water mixing ITO layer.
2. solar energy hetero-junction solar cell according to claim 1, which is characterized in that the solar energy hetero-junction solar cell is each
In the lamination ITO that face is equipped with：It is the first not water mixing ITO layer, described along the direction far from the solar energy hetero-junction solar cell
Water mixing transparent conductive layer and the second not water mixing ITO layer are sequentially overlapped setting.
3. solar energy hetero-junction solar cell according to claim 2, which is characterized in that the water mixing transparent conductive layer
Thickness is 30-50nm.
4. solar energy hetero-junction solar cell according to claim 2, which is characterized in that the first not water mixing ITO layer is micro-
Crystalline state ITO layer, thickness 2-3nm.
5. solar energy hetero-junction solar cell according to claim 2, which is characterized in that the second not water mixing ITO layer is more
Crystalline state ITO layer, thickness 30-50nm.
6. solar energy hetero-junction solar cell according to any one of claims 1-5, which is characterized in that the solar energy is heterogeneous
Junction battery further includes monocrystalline silicon piece, the first intrinsic amorphous silicon passivation layer, the second intrinsic amorphous silicon passivation layer, the doping of the first non-crystalline silicon
Layer, the second non-crystalline silicon doped layer, first electrode and second electrode.
7. solar energy hetero-junction solar cell according to claim 6, which is characterized in that the solar energy hetero-junction solar cell is from upper
Include first electrode, the second not water mixing ITO layer of lamination ITO, the water mixing transparent conductive layer and described successively under
First not water mixing ITO layer, the first non-crystalline silicon doped layer, the first intrinsic amorphous silicon passivation layer, monocrystalline silicon piece, the second intrinsic amorphous silicon
Passivation layer, the second non-crystalline silicon doped layer, the first not water mixing ITO layer of lamination ITO, the water mixing transparent conductive layer and
The second not water mixing ITO layer and second electrode.
8. solar energy hetero-junction solar cell according to claim 7, which is characterized in that the monocrystalline silicon piece is N-shaped monocrystalline silicon
Piece, thickness are 50-300 μm.
9. solar energy hetero-junction solar cell according to claim 7, which is characterized in that the first intrinsic amorphous silicon passivation layer
Thickness with the second intrinsic amorphous silicon passivation layer is 1-20nm.
10. solar energy hetero-junction solar cell according to claim 7, which is characterized in that
The thickness of the first non-crystalline silicon doped layer and the second non-crystalline silicon doped layer is 3-20nm；
The first non-crystalline silicon doped layer is P-type non-crystalline silicon doped layer, and the second non-crystalline silicon doped layer is adulterated for N-type non-crystalline silicon
Layer；Or
The first non-crystalline silicon doped layer is N-type non-crystalline silicon doped layer, and the second non-crystalline silicon doped layer is adulterated for P-type non-crystalline silicon
Layer.
11. solar energy hetero-junction solar cell according to claim 7, which is characterized in that
The thickness of the first non-crystalline silicon doped layer and the second non-crystalline silicon doped layer is 3-20nm；
The first non-crystalline silicon doped layer is N-type non-crystalline silicon doped layer, and the second non-crystalline silicon doped layer is adulterated for P-type non-crystalline silicon
Layer.
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