CN108321240A - A kind of solar energy hetero-junction solar cell and preparation method thereof - Google Patents
A kind of solar energy hetero-junction solar cell and preparation method thereof Download PDFInfo
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- CN108321240A CN108321240A CN201711397698.5A CN201711397698A CN108321240A CN 108321240 A CN108321240 A CN 108321240A CN 201711397698 A CN201711397698 A CN 201711397698A CN 108321240 A CN108321240 A CN 108321240A
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 214
- 238000002156 mixing Methods 0.000 claims abstract description 198
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 87
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 80
- 238000003475 lamination Methods 0.000 claims abstract description 45
- 238000002161 passivation Methods 0.000 claims abstract description 40
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims description 66
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 56
- 239000007789 gas Substances 0.000 claims description 51
- 238000000151 deposition Methods 0.000 claims description 48
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- 229910052760 oxygen Inorganic materials 0.000 claims description 30
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- 230000008021 deposition Effects 0.000 claims description 27
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- 238000001755 magnetron sputter deposition Methods 0.000 claims description 10
- 238000007650 screen-printing Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 272
- 210000004027 cell Anatomy 0.000 description 26
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- 229910052796 boron Inorganic materials 0.000 description 10
- 238000011068 loading method Methods 0.000 description 10
- 229910052698 phosphorus Inorganic materials 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 9
- 229910000077 silane Inorganic materials 0.000 description 9
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
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- 230000008901 benefit Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 4
- 239000012895 dilution Substances 0.000 description 4
- 238000010790 dilution Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 230000001795 light effect Effects 0.000 description 4
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
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- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000009738 saturating Methods 0.000 description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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Abstract
A kind of solar energy hetero-junction solar cell, the solar energy hetero-junction solar cell includes first electrode, the first lamination ITO, the first non-crystalline silicon doped layer, the first intrinsic amorphous silicon passivation layer, monocrystalline silicon piece, the second intrinsic amorphous silicon passivation layer, the second amorphous silicon layer doped layer, the second lamination ITO and second electrode successively from top to bottom, wherein, the first lamination ITO includes the first water mixing transparent conductive layer, and the second lamination ITO includes the second water mixing transparent conductive layer.Present invention also provides a kind of preparation methods of solar energy hetero-junction solar cell.The excellent optical performance of solar energy hetero-junction solar cell provided by the present application, and each layer contact in battery is good, battery conducting is smooth.
Description
Technical field
This application involves but be not limited to heterojunction solar battery technical field, be more particularly without limitation, to a kind of solar energy
Hetero-junction solar cell and preparation method thereof.
Background technology
In the field heterojunction solar battery (HJT), ito thin film plays an important role, it is not only responsible for collecting photoproduction
Carrier, while most solar energies also to be allowed to can smoothly enter into cell body.The ito thin film of good properties will have high saturating
Light rate and good electric conductivity；In addition, in HJT devices, ITO is a part for battery.In terms of device optical, ITO is electricity
The sunken light anti-reflection layer in pond；In terms of device electricity, the quality of ITO properties can influence entire battery and be matched in energy band, be caused
The variation of battery open circuit voltage and fill factor.
Currently, the method for preparing ITO materials is divided into two kinds of techniques of low temperature (room temperature) and high temperature (180 DEG C of ＞).According to being passed through
The difference of reaction gas, low temperature (room temperature) technique can be divided into again common process (in technical process, being only passed through argon gas and oxygen) and
Hydrogen loading technique (is passed through argon gas, oxygen and hydrogen to participate in reacting) during room temperature deposition ITO.
Therefore, it is necessary to research and develop a kind of solar energy hetero-junction solar cell comprising ito thin film having more preferable performance.
Invention content
It is the general introduction of the theme to being described in detail herein below.This general introduction is not to limit the protection model of claim
It encloses.
Present inventor is deeply found that existing ITO materials during studying heterojunction solar battery
Preparation method there are problems that, be summarized as follows：
ITO prepared by common process (in technical process, being only passed through argon gas and oxygen) under normal circumstances, at room temperature is micro-
The carrier concentration of the material of crystalline state, this crystallite state ITO materials is high, the light transmittance slightly worse one of corresponding crystallite state ITO materials
A bit；But crystallite state ITO has good matching with doped amorphous silicon, and contact well can be realized with doped amorphous silicon layer.
Hydrogen loading technique (argon gas, oxygen and hydrogen are passed through during room temperature deposition ITO to participate in reacting) at room temperature
The crystallization degree of ITO materials can be changed so that the crystallite state that ITO is prepared by original common process (obstructed hydrogen) is changed into non-
Crystalline state.The light transmittance for the polycrystalline state ITO materials that the light transmission of this amorphous state ITO materials is excellent and prepared by high-temperature technology is several
It is equally good.But the refractive index (n) of amorphous state ITO materials prepared by hydrogen loading technique is bigger, as the transparent of solar cell
When conductive layer, there is no problem in terms of light transmittance, but falling into light anti-reflection effect can be slightly weaker.
The ITO materials prepared under high temperature are polycrystalline state.The process controllability of high-temperature technology, the ITO materials prepared are led
Electrical and light transmittance can meet the requirement of solar cell.The current this method for preparing ITO materials by most enterprises with
Research unit is used.However, this method is nor perfect, in technique and battery structure design aspect, there is also prodigious
Optimize space.
The core of solar battery structure is 4 layers of amorphous silicon material：Intrinsic amorphous silicon passivation layer (2,4), the first non-crystalline silicon
Doped layer (3), the second non-crystalline silicon doped layer (5), wherein intrinsic amorphous silicon passivation layer (2,4) is used as passivation layer, the first non-crystalline silicon
Doped layer (3) and the second non-crystalline silicon doped layer (5) are used separately as back surface field and battery emitter.The thickness of this 4 layers of amorphous silicon layers is all
No more than 20nm, and property is relatively unstable.If being put into hot environment by the battery after prepared by 4 layers of non-crystalline silicon has been completed
In, the property of non-crystalline silicon is extremely easily varied.
At present in the preparation flow of the solar cell of mainstream, battery is first completed 4 layers of non-crystalline silicon and is prepared, and then can enter
ITO depositing operation flows.It deposits ITO and low temperature common process, hydrogen loading technique or high-temperature deposition process can be selected.From effect
It sees, the battery current that low temperature common process prepares ITO is low, and the battery fill factor that hydrogen loading technique prepares ITO is low, high-temperature technology system
It is not high that standby ITO batteries open pressure.Especially in high temperature ITO depositing operations, it can be passed through a large amount of oxygen in cavity, 4 layers of battery
Amorphous silicon layer is easy to be aoxidized in high temperature ITO deposition process；In addition also having many high energy in the process cavity of deposition ITO
Plasma, amorphous silicon membrane are easier to be aoxidized and destroyed.
The inventors of the present application found that it is anti-to participate in be passed through a certain amount of water vapour during preparing amorphous state ITO
It answers, prepared water mixing transparent conductive layer can be improved and (in the application, transparent conductive layer prepared by water mixing technique is determined
Justice is water mixing transparent conductive layer, and transparent conductive layer prepared by existing not water mixing technique is defined as not water mixing transparent
Conductive layer) performance, it is high to obtain mobility, the low water mixing ito thin film of carrier concentration.Water mixing transparent conductive layer, which has, to be compared
Good photopermeability energy, but there are work functions to match, electrode contacts with battery doping amorphous silicon layer and silk-screen printing silver grid
Problems.If all using water mixing transparent conductive layer as the transparency conducting layer of battery, the short circuit current of battery is not
Mistake, but open-circuit voltage and fill factor are relatively low.
On the basis of deeply probing into problem of the existing technology, present inventor creatively proposes ratio
Design compared with optimization is：After battery completes 4 layers of amorphous silicon deposition, on the first surface and second surface of battery, sink successively
Product crystallite state not water mixing ITO (room temperature, common process), amorphous state water mixing ITO (room temperature, water mixing technique) and polycrystalline state not water mixing
ITO (high-temperature technology).The design of this optimization, the single technique used with current most research and development and production mechanism (non-lamination,
Single structure, the ITO for only selecting the one of which technique in above-mentioned three kinds of technique to prepare) prepare ITO method it is different, to
Improve the efficiency of battery.
This application provides a kind of solar energy hetero-junction solar cell prepared using water mixing transparent conductive layer and its preparation sides
Method, to efficiently solve, ITO conductive layer light transmittance is not high, amorphous silicon film during poor, the high temperature deposition ITO that falls into light anti-reflection effect
The problems such as oxidation.
Specifically, this application provides a kind of solar energy hetero-junction solar cells, and the solar energy hetero-junction solar cell is from top to bottom
Successively include first electrode, the first lamination ITO, the first non-crystalline silicon doped layer, the first intrinsic amorphous silicon passivation layer, monocrystalline silicon piece,
Second intrinsic amorphous silicon passivation layer, the second amorphous silicon layer doped layer, the second lamination ITO and second electrode, wherein described first is folded
Layer ITO includes the first water mixing transparent conductive layer, and the second lamination ITO includes the second water mixing transparent conductive layer.
In some embodiments, the first water mixing transparent conductive layer and the second water mixing transparent conductive layer
Thickness can be 30-50nm.
In some embodiments, the first lamination ITO can also include the first not water mixing ITO layer and the second not water mixing
ITO layer；
The first not water mixing ITO layer is arranged in the first amorphous silicon layer doped layer and the first water mixing transparent
Between conductive layer；
The second not water mixing ITO layer is arranged between the first water mixing transparent conductive layer and the first electrode.
In some embodiments, the second lamination ITO can also include third not water mixing ITO layer and the 4th not water mixing
ITO layer；
The third not water mixing ITO layer is arranged in the second amorphous silicon layer doped layer and the second water mixing transparent
Between conductive layer；
The 4th not water mixing ITO layer is arranged between the second water mixing transparent conductive layer and the second electrode.
In some embodiments, the first not water mixing ITO layer can be crystallite state ITO layer, and thickness can be 2-
3nm；The second not water mixing ITO layer can be polycrystalline state ITO layer, and thickness can be 30-50nm.
In some embodiments, the third not water mixing ITO layer can be crystallite state ITO layer, and thickness can be 2-
3nm；The 4th not water mixing ITO layer can be polycrystalline state ITO layer, and thickness can be 30-50nm.
In some embodiments, the monocrystalline silicon piece can be N-shaped monocrystalline silicon piece, and thickness can be 50-300 μm.
In some embodiments, the described first intrinsic amorphous silicon passivation layer and the second intrinsic amorphous silicon passivation layer
Thickness can be 1-20nm.
In some embodiments, the thickness of the first non-crystalline silicon doped layer and the second non-crystalline silicon doped layer can be with
It is 3-20nm.
In some embodiments, the first non-crystalline silicon doped layer can be P-type non-crystalline silicon doped layer, and described second is non-
Doped polycrystal silicon layer can be N-type non-crystalline silicon doped layer.
In some embodiments, the first non-crystalline silicon doped layer can be N-type non-crystalline silicon doped layer, and described second is non-
Doped polycrystal silicon layer can be P-type non-crystalline silicon doped layer.
Solar energy hetero-junction solar cell provided by the present application organically combines the advantage of 3 type ITO layers.Optically
With two-fold advantage：Agent structure (larger 2 layers of thickness, i.e. the polycrystalline state ITO and non-of entire lamination transparent conductive material
Crystalline state ITO materials) it is the preferable ITO materials of light transmittance used.This design can maximumlly ensure the transmitance of light；
Moreover, the refractive index of polycrystalline state ITO, amorphous state ITO, crystallite state ITO layer has differences.It falls into light anti-reflection design, leads in optics
It crosses and combines this trilaminate material so that when light incidence, pass through three layers of ITO materials that refractive index changes from small to large successively, make battery
Sunken light effect enhanced, to make battery that there is the efficiency gain that significantly improves.
In electrical design, lamination ITO electrode is more advantageous to transporting for electric current：Crystallite state ITO materials (6 mark in Fig. 1)
Carrier concentration it is high, can realize contact well with doped amorphous silicon layer (3 and 5 mark in Fig. 1).Two layers of doped amorphous silicon layer
(the a-Si of P doping:The a-Si of H layers and B doping:H layers) on be respectively provided with the ITO layer of one layer of crystallite state, in this way can be to avoid two
The ITO layer poor contact of layer doped amorphous silicon layer and water mixing so that battery conducting is smooth.
Present invention also provides a kind of preparation method of solar energy hetero-junction solar cell, the method includes：
The first intrinsic amorphous silicon passivation layer and the first non-crystalline silicon doped layer are sequentially depositing on the first surface of monocrystalline silicon piece,
The second intrinsic amorphous silicon passivation layer and the second non-crystalline silicon doped layer are sequentially depositing on the second surface of the monocrystalline silicon piece；
It is sequentially depositing each ITO layer on the first non-crystalline silicon doped layer, with the shape on the first non-crystalline silicon doped layer
At the first lamination ITO；
It is sequentially depositing each ITO layer on the second non-crystalline silicon doped layer, with the shape on the second non-crystalline silicon doped layer
At the second lamination ITO；
Silk-screen printing first electrode and second electrode on the first lamination ITO and the second lamination ITO respectively；
Wherein, the first lamination ITO includes the first water mixing transparent conductive layer, and the second lamination ITO includes second
Water mixing transparent conductive layer.
In some embodiments, the first lamination ITO can also include the first not water mixing ITO layer and the second not water mixing
ITO layer；
It is sequentially depositing each ITO layer on the first non-crystalline silicon doped layer, with the shape on the first non-crystalline silicon doped layer
Can be at the step of the first lamination ITO：
The first not water mixing ITO layer is deposited on the first non-crystalline silicon doped layer；
The first water mixing transparent conductive layer is deposited in the first not water mixing ITO layer；
The second not water mixing ITO layer is deposited on the first water mixing transparent conductive layer.
In some embodiments, the second lamination ITO can also include third not water mixing ITO layer and the 4th not water mixing
ITO layer；
It is sequentially depositing each ITO layer on the second non-crystalline silicon doped layer, with the shape on the second non-crystalline silicon doped layer
Can be at the step of the second lamination ITO：
Third not water mixing ITO layer is deposited on the second non-crystalline silicon doped layer；
The second water mixing transparent conductive layer is deposited in the third not water mixing ITO layer；
The 4th not water mixing ITO layer is deposited on the second water mixing transparent conductive layer.
In some embodiments, it deposits the first water mixing transparent conductive layer or the second water mixing transparent is led
The step of electric layer can be：It is passed through argon gas, oxygen and water vapour at ambient temperature, deposits the water mixing transparent conductive layer.
In some embodiments, the first water mixing transparent conductive layer or the second water mixing transparent are being deposited
The flow of water vapour can be kept constant within the scope of 0.1-10sccm during conductive layer.
In some embodiments, the first water mixing transparent conductive layer described in magnetron sputtering method coated film deposition may be used
Or the second water mixing transparent conductive layer.
Optionally,
The gas flow ratio of the argon gas, the oxygen and the water vapour can be (200:10:1)-(400:10:1)；
Pressure when deposition can be 0.1-1Pa, and the power density of shielding power supply can be 0.5-3W/cm2。
In some embodiments, the first water mixing transparent conductive layer and the second water mixing transparent conductive layer
Thickness can be 30-50nm.
In some embodiments, the step of depositing the first not water mixing ITO layer or third not water mixing ITO layer can be with
For：At ambient temperature, on the first non-crystalline silicon doped layer or the second amorphous silicon layer doped layer deposition of microcrystalline state first
Not water mixing ITO layer or third not water mixing ITO layer.
In some embodiments, can it be passed through argon gas and oxygen at ambient temperature, using magnetron sputtering method described
The first not water mixing ITO layer or third not water mixing are deposited on first non-crystalline silicon doped layer or the second amorphous silicon layer doped layer
ITO layer.
Optionally,
The gas flow ratio of the argon gas and the oxygen can be 20:1-60:1；
Pressure when deposition can be 0.1-2Pa, and the power density of shielding power supply can be 0.5-3W/cm2；
The thickness of the first not water mixing ITO layer and third not water mixing ITO layer all can be 2-3nm.
In some embodiments, the step of depositing the second not water mixing ITO layer or the 4th not water mixing ITO layer can
Think：Under the high temperature conditions, it sinks on the first water mixing transparent conductive layer or the second water mixing transparent conductive layer
The the second not water mixing ITO layer or the 4th not water mixing ITO layer of product polycrystalline state.
In some embodiments, the monocrystalline silicon piece 180 DEG C -200 DEG C be can be heated to, argon gas and oxygen are passed through,
It is deposited on the first water mixing transparent conductive layer or the second water mixing transparent conductive layer using magnetron sputtering method more
The the second not water mixing ITO layer or the 4th not water mixing ITO layer of crystalline state.
Optionally,
The gas flow ratio of the argon gas and the oxygen can be 20:1-60:1；
Pressure when deposition can be 0.1-2Pa, and the power density of shielding power supply can be 0.5-3W/cm2。
The thickness of the second not water mixing ITO layer and the 4th not water mixing ITO layer can be 30-50nm.
In some embodiments, the monocrystalline silicon piece can be N-shaped monocrystalline silicon piece, and thickness can be 50-300 μm.
In some embodiments, the described first intrinsic amorphous silicon passivation layer and the second intrinsic amorphous silicon passivation layer
Thickness can be 1-20nm.
In some embodiments, the thickness of the first non-crystalline silicon doped layer and the second non-crystalline silicon doped layer can be with
It is 3-20nm.
In some embodiments, the first non-crystalline silicon doped layer can be P-type non-crystalline silicon doped layer, and described second is non-
Doped polycrystal silicon layer can be N-type non-crystalline silicon doped layer.
In some embodiments, the first non-crystalline silicon doped layer can be N-type non-crystalline silicon doped layer, and described second is non-
Doped polycrystal silicon layer can be P-type non-crystalline silicon doped layer.
In some embodiments, may be used the first intrinsic amorphous silicon passivation layer described in chemical vapor deposition,
The first non-crystalline silicon doped layer, the second intrinsic amorphous silicon passivation layer and the second non-crystalline silicon doped layer.
The preparation method of solar energy hetero-junction solar cell provided by the present application can avoid amorphous silicon film during high temperature deposition ITO
The problem of oxidation：Deposition of microcrystalline state ITO layer and amorphous water mixing ITO layer at low temperature first, due to cell piece not by
Heating, the rate that amorphous silicon material is reacted with process gas (oxygen) are slow, hence it is evident that reduce the problem of oxidation of amorphous silicon layer；
And this two layers of ITO material can be used as protective layer, it is possible to prevente effectively from amorphous silicon layer is aoxidized during high temperature deposition ITO
Problem.
Other features and advantage will illustrate in the following description, also, partly become from specification
It obtains it is clear that being understood by implementing the application.The purpose of the application and other advantages can be by specification, rights
Specifically noted structure is realized and is obtained in claim and attached drawing.
Description of the drawings
Attached drawing is used for providing further understanding technical scheme, and a part for constitution instruction, with this
The embodiment of application is used to explain the technical solution of the application together, does not constitute the limitation to technical scheme.
Fig. 1 is the structural schematic diagram of the solar energy hetero-junction solar cell of the embodiment of the present application 1 or 2.
Fig. 2 is the H103 resin of different ITO samples, wherein " crystallite " represents the ITO prepared using low temperature common process,
" amorphous " represents the ITO prepared using low temperature hydrogen loading technique, and " polycrystalline " represents the ITO prepared using high-temperature technology, and " the application is real
Apply example " represent the lamination ITO of the embodiment of the present application 1.
Fig. 3 is the blown-up partial detail of the short-wave band of Fig. 2.
Fig. 4 is the blown-up partial detail of the long wave band of Fig. 2.
Fig. 5 is the silicon chip surface reflectance curve with different ITO, wherein " crystallite " is represented with using low temperature routine work
ITO prepared by skill, " amorphous " represent the ITO for carrying and being prepared using low temperature hydrogen loading technique, and " polycrystalline " is represented with using high temperature work
ITO prepared by skill, " the embodiment of the present application " represent the lamination ITO with the embodiment of the present application 1.
Fig. 6 is the blown-up partial detail of the short-wave band of Fig. 5.
Fig. 7 is the blown-up partial detail of the middle long wave band of Fig. 5.
Specific implementation mode
To make the purpose, technical scheme and advantage of the application be more clearly understood, below in conjunction with attached drawing to the application
Embodiment be described in detail.It should be noted that in the absence of conflict, in the embodiment and embodiment in the application
Feature mutually can arbitrarily combine.
Embodiment 1
The solar energy hetero-junction solar cell of the present embodiment be HJT hetero-junction solar cells, referring to Fig. 1, the HJT hetero-junction solar cells from
Include first electrode (9), the second not water mixing ITO layer (8), the first water mixing transparent conductive layer (7), first not successively under
The a-Si of water mixing ITO layer (6), phosphorus doping:H (n) layers (3), the first intrinsic amorphous silicon passivation layer (2), N-shaped monocrystalline silicon piece (1),
Two intrinsic amorphous silicon passivation layers (4), boron doped a-Si:H (p) layers (5), third not water mixing ITO layer (6 '), the second water mixing ITO
Transparency conducting layer (7 '), the 4th not water mixing ITO layer (8 ') and second electrode (9 ').
The thickness of the N-shaped monocrystalline silicon piece (1) is 180 μm；
The thickness of the first intrinsic amorphous silicon passivation layer (2) is 5nm；
The thickness of the second intrinsic amorphous silicon passivation layer (4) is 5nm；
The a-Si of the phosphorus doping:The thickness of H (n) layers (3) is 7nm；
The boron doped a-Si:The thickness of H (p) layers (5) is 7nm；
The first not water mixing ITO layer (6) and the third not water mixing ITO layer (6 ') are crystallite state ITO layer, and thickness is equal
For 2nm；
The second not water mixing ITO layer (8) and the 4th not water mixing ITO layer (8 ') are the ITO layer of polycrystalline state, thickness
It is 30nm；
The thickness of the first water mixing transparent conductive layer (7) and the second water mixing transparent conductive layer (7 ') is
50nm。
Wherein, the first not water mixing ITO layer (6), the first water mixing transparent conductive layer (7) and the second not water mixing ITO layer (8)
Combination be referred to as the first lamination ITO, third not water mixing ITO layer (6 '), the second water mixing transparent conductive layer (7 ') and the 4th are not
The combination of water mixing ITO layer (8 ') is referred to as the second lamination ITO.
The HJT hetero-junction solar cells of the present embodiment are prepared using following methods：
A) the first intrinsic amorphous is sequentially depositing on the first surface of N-shaped monocrystalline silicon piece (1) using chemical vapour deposition technique
The a-Si of silicon passivation layer (2) and phosphorus doping:H (n) layers (3) are sequentially depositing on the second surface of the N-shaped monocrystalline silicon piece (1)
Second intrinsic amorphous silicon passivation layer (4) and boron doped a-Si:H (p) layers (5)；
Wherein, the sedimentary condition of the first intrinsic amorphous silicon passivation layer (2) or the second intrinsic amorphous silicon passivation layer (4) is：Electricity
Source power is 350W, and the gas flow ratio (hydrogen dilution ratio) of hydrogen and silane is 12：1, pressure 0.7pa, underlayer temperature when deposition
240℃；The a-Si of phosphorus doping:The sedimentary condition of H (n) layers (3) is：Power is 400W, hydrogen and silane gas flow-rate ratio
(hydrogen dilution ratio) is 4:1, the gas flow ratio (phosphorus silicon ratio) of phosphine and silane is 1:100, pressure 0.4pa, substrate when deposition
Temperature be 230 DEG C；Wherein boron doped a-Si:The sedimentary condition of H (p) layers (5) is：Power is 500W, hydrogen and silicon
The gas flow ratio (hydrogen dilution ratio) of alkane is 5:1, the gas flow ratio (phosphorus silicon ratio) of phosphine and silane is 2:98, pressure is
0.3pa, substrate temperature is 200 DEG C when deposition；
B) argon gas and oxygen are passed through at ambient temperature, the gas flow ratio of argon gas and oxygen is set in 50:1, cavity pressure
It is strong to remain 0.3Pa, shielding power supply is opened, power density is 2W/cm2, using magnetron sputtering method in the phosphorus doping
a-Si:The first not water mixing ITO layer (6) is deposited on H (n) layers (3)；
C) using technique identical with step b) in the boron doped a-Si:H (p) layers deposit the third not on (5)
Water mixing ITO layer (6 ')；
D) at ambient temperature, while being passed through argon gas, oxygen and water vapour, argon gas, oxygen and water vapour gas flow
Than being set in 250:10:1, chamber pressure remains 0.4Pa, keeps the stability of flow of water vapour in 0.5sccm, opens sputtering electricity
Source, power density are 2.1W/cm2, using magnetron sputtering method, described is deposited on the first not water mixing ITO layer (6)
One water mixing transparent conductive layer (7)；
E) it is saturating to deposit the second water mixing ITO on the third not water mixing ITO layer (6 ') for use technique identical with step d)
Bright conductive layer (7 ')；
F) the N-shaped monocrystalline silicon piece (1) is heated to 185 DEG C, is passed through argon gas and oxygen, the gas flow of argon gas and oxygen
Than being set in 60:1, chamber pressure remains 0.5Pa, opens shielding power supply, and power density is 2W/cm2, splashed using magnetic control
It penetrates method and deposits the second not water mixing ITO layer (8) on the first water mixing transparent conductive layer (7)；
G) the 4th is deposited on the second water mixing transparent conductive layer (7 ') using technique identical with step f) not mix
Water ITO layer (8 ')；
H) silk-screen printing first on the second not water mixing ITO layer (8) and the 4th not water mixing ITO layer (8 ') respectively
Electrode (9) and second electrode (9 ').
It will be understood by those of ordinary skill in the art that although the preparation process of embodiment 1 is with step a)-h) it shows,
Be and non-limiting have to by a)-h) sequence go to prepare the solar energy hetero-junction solar cell of the present embodiment, for example, according to a), b),
D), sequence f), c), e), g), h) can also prepare the solar energy hetero-junction solar cell of the present embodiment.
Embodiment 2
The solar energy hetero-junction solar cell of the present embodiment be HJT hetero-junction solar cells, referring to Fig. 1, the HJT hetero-junction solar cells from
Include first electrode (9), the second not water mixing ITO layer (8), the first water mixing transparent conductive layer (7), first not successively under
The a-Si of water mixing ITO layer (6), phosphorus doping:H (n) layers (3), the first intrinsic amorphous silicon passivation layer (2), N-shaped monocrystalline silicon piece (1),
Two intrinsic amorphous silicon passivation layers (4), boron doped a-Si:H (p) layers (5), third not water mixing ITO layer (6 '), the second water mixing ITO
Transparency conducting layer (7 '), the 4th not water mixing ITO layer (8 ') and second electrode (9 ').
The thickness of the N-shaped monocrystalline silicon piece (1) is 180 μm；
The thickness of the intrinsic amorphous silicon passivation layer (2) is 10nm；
The thickness of the intrinsic amorphous silicon passivation layer (4) is 10nm；
The a-Si of the phosphorus doping:The thickness of H (n) layers (3) is 20nm；
The boron doped a-Si:The thickness of H (p) layers (5) is 20nm；
The first not water mixing ITO layer (6) and the third not water mixing ITO layer (6 ') are crystallite state ITO layer, and thickness is equal
For 3nm；
The second not water mixing ITO layer (8) and the 4th not water mixing ITO layer (8 ') are the ITO layer of polycrystalline state, thickness
It is 40nm；
The thickness of the first water mixing transparent conductive layer (7) and the second water mixing transparent conductive layer (7 ') is
40nm。
The HJT hetero-junction solar cells of the present embodiment are prepared using following methods：
A) the first intrinsic amorphous is sequentially depositing on the first surface of N-shaped monocrystalline silicon piece (1) using chemical vapour deposition technique
The a-Si of silicon passivation layer (2) and phosphorus doping:H (n) layers (3) are sequentially depositing on the second surface of the N-shaped monocrystalline silicon piece (1)
Second intrinsic amorphous silicon passivation layer (4) and boron doped a-Si:H (p) layers (5)；
Wherein, the sedimentary condition of the first intrinsic amorphous silicon passivation layer (2) or the second intrinsic amorphous silicon passivation layer (4) is：Electricity
Source power is 380W, and hydrogen is 14 with silane gas flow-rate ratio (hydrogen dilution ratio)：1, pressure 0.7pa, underlayer temperature 220 when deposition
℃；The a-Si of phosphorus doping:The sedimentary condition of H (n) layers (3) is：Power is 400W, hydrogen and silane gas flow-rate ratio (hydrogen
Thinner ratio) it is 4:1, phosphine and silane gas flow-rate ratio (phosphorus silicon ratio) 1:100 pressure 0.6pa, 220 DEG C of underlayer temperature when deposition；
Wherein boron doped a-Si:The sedimentary condition of H (p) layers (5) is：Power is 450W, hydrogen and silane gas flow-rate ratio (hydrogen
Thinner ratio) it is 5:1, phosphine and silane gas flow-rate ratio (phosphorus silicon ratio) 1:100, pressure 0.3pa, 200 DEG C of underlayer temperature when deposition；
B) argon gas and oxygen are passed through at ambient temperature, the gas flow ratio of argon gas and oxygen is set in 20:1, cavity pressure
It is strong to remain 0.4Pa, shielding power supply is opened, power density is 1W/cm2, using magnetron sputtering method in the phosphorus doping
a-Si:The first not water mixing ITO layer (6) is deposited on H (n) layers (3)；
C) using technique identical with step b) in the boron doped a-Si:H (p) layers deposit the third not on (5)
Water mixing ITO layer (6 ')；
D) at ambient temperature, while being passed through argon gas, oxygen and water vapour, argon gas, oxygen and water vapour gas flow
Than being set in 300:10:1, chamber pressure remains 0.6Pa, keeps the stability of flow 1sccm of water vapour, opens shielding power supply,
Power density is 1W/cm2, using magnetron sputtering method, the first water mixing ITO is deposited on the first not water mixing ITO layer (6)
Transparency conducting layer (7)；
E) it is saturating to deposit the second water mixing ITO on the third not water mixing ITO layer (6 ') for use technique identical with step d)
Bright conductive layer (7 ')；
F) the N-shaped monocrystalline silicon piece (1) is heated to 190 DEG C, is passed through argon gas and oxygen, the gas flow of argon gas and oxygen
Than being set in 30:1, chamber pressure remains 0.3Pa, opens shielding power supply, and power density is 2W/cm2, splashed using magnetic control
It penetrates method and deposits the second not water mixing ITO layer (8) on the first water mixing transparent conductive layer (7)；
G) the 4th is deposited on the second water mixing transparent conductive layer (7 ') using technique identical with step f) not mix
Water ITO layer (8 ')；
H) silk-screen printing first on the second not water mixing ITO layer (8) and the 4th not water mixing ITO layer (8 ') respectively
Electrode (9) and second electrode (9 ').
Performance test
1, the transmitance of the lamination ITO of ITO and the embodiment of the present application prepared by test conventional method, test result is see figure
2-4。
From Fig. 2-4 as can be seen that the transmitance of the lamination ITO of the embodiment of the present application is higher than using the preparation of low temperature common process
Crystallite ITO transmitance, close to using low temperature routine hydrogen loading technique prepare amorphous ITO and using high temperature common process prepare
Poly-ITO transmitance.
2, the reflectivity of the silicon chip surface of the lamination ITO for the ITO and the embodiment of the present application that test is prepared with conventional method,
Test result is see Fig. 5-7.
It is better that the lower representative of reflectivity values falls into light effect.From Fig. 5-7 as can be seen that the ITO's of the embodiment of the present application falls into
Light effect is better than the crystallite ITO prepared using low temperature common process, the amorphous ITO prepared using low temperature routine hydrogen loading technique and adopted
With the sunken light effect of poly-ITO prepared by high temperature common process.
3, the solar energy hetero-junction solar cell of test the embodiment of the present application 1 and the battery prepared using other single structures ITO
Efficiency, test result is see table 1 (parameter normalized) in table 1.
Table 1
As it can be seen from table 1 the efficiency of the solar energy hetero-junction solar cell of the embodiment of the present application 1 be substantially better than it is normal using low temperature
Advise the crystallite ITO of technique preparation, using the amorphous ITO of low temperature routine hydrogen loading technique preparation and using the preparation of high temperature common process
Efficiency is improved 3 percentage points or more by the efficiency of the battery prepared by poly-ITO.
Although the embodiment disclosed by the application is as above, the content only for ease of understanding the application and use
Embodiment is not limited to the application.Technical staff in any the application fields, is taken off not departing from the application
Under the premise of the spirit and scope of dew, any modification and variation, but the application can be carried out in the form and details of implementation
Scope of patent protection, still should be subject to the scope of the claims as defined in the appended claims.
Claims (18)
1. a kind of solar energy hetero-junction solar cell, the solar energy hetero-junction solar cell includes first electrode, first successively from top to bottom
Lamination ITO, the first non-crystalline silicon doped layer, the first intrinsic amorphous silicon passivation layer, monocrystalline silicon piece, the second intrinsic amorphous silicon passivation layer,
Second amorphous silicon layer doped layer, the second lamination ITO and second electrode, wherein the first lamination ITO includes the first water mixing ITO
Transparency conducting layer, the second lamination ITO include the second water mixing transparent conductive layer.
2. solar energy hetero-junction solar cell according to claim 1, wherein the first water mixing transparent conductive layer and institute
The thickness for stating the second water mixing transparent conductive layer is 30-50nm.
3. solar energy hetero-junction solar cell according to claim 1 or 2, wherein the first lamination ITO does not further include first not
Water mixing ITO layer and the second not water mixing ITO layer；
The first not water mixing ITO layer setting is conductive in the first amorphous silicon layer doped layer and the first water mixing transparent
Between layer；
The second not water mixing ITO layer is arranged between the first water mixing transparent conductive layer and the first electrode.
4. solar energy hetero-junction solar cell according to any one of claim 1-3, wherein the second lamination ITO is also wrapped
Include third not water mixing ITO layer and the 4th not water mixing ITO layer；
The third not water mixing ITO layer setting is conductive in the second amorphous silicon layer doped layer and the second water mixing transparent
Between layer；
The 4th not water mixing ITO layer is arranged between the second water mixing transparent conductive layer and the second electrode.
5. solar energy hetero-junction solar cell according to claim 3 or 4, wherein
The first not water mixing ITO layer is crystallite state ITO layer, thickness 2-3nm；
The second not water mixing ITO layer is polycrystalline state ITO layer, thickness 30-50nm.
6. solar energy hetero-junction solar cell according to claim 4, wherein
The third not water mixing ITO layer is crystallite state ITO layer, thickness 2-3nm；
The 4th not water mixing ITO layer is polycrystalline state ITO layer, thickness 30-50nm.
7. the solar energy hetero-junction solar cell according to any one of claim 1-6, wherein the monocrystalline silicon piece is N-shaped list
Crystal silicon chip, thickness are 50-300 μm.
8. the solar energy hetero-junction solar cell according to any one of claim 1-6, wherein first intrinsic amorphous silicon is blunt
The thickness for changing layer and the second intrinsic amorphous silicon passivation layer is 1-20nm.
9. the solar energy hetero-junction solar cell according to any one of claim 1-6, wherein
The thickness of the first non-crystalline silicon doped layer and the second non-crystalline silicon doped layer is 3-20nm；
The first non-crystalline silicon doped layer is P-type non-crystalline silicon doped layer, and the second non-crystalline silicon doped layer adulterates for N-type non-crystalline silicon
Layer；Alternatively, the first non-crystalline silicon doped layer is N-type non-crystalline silicon doped layer, the second non-crystalline silicon doped layer is P-type non-crystalline silicon
Doped layer；
Optionally, the first non-crystalline silicon doped layer is N-type non-crystalline silicon doped layer, and the second non-crystalline silicon doped layer is that p-type is non-
Doped polycrystal silicon layer.
10. a kind of preparation method of solar energy hetero-junction solar cell, the method includes：
The first intrinsic amorphous silicon passivation layer and the first non-crystalline silicon doped layer are sequentially depositing on the first surface of monocrystalline silicon piece, in institute
It states and is sequentially depositing the second intrinsic amorphous silicon passivation layer and the second non-crystalline silicon doped layer on the second surface of monocrystalline silicon piece；
It is sequentially depositing each ITO layer on the first non-crystalline silicon doped layer, to form on the first non-crystalline silicon doped layer
One lamination ITO；
It is sequentially depositing each ITO layer on the second non-crystalline silicon doped layer, to form on the second non-crystalline silicon doped layer
Two lamination ITO；
Silk-screen printing first electrode and second electrode on the first lamination ITO and the second lamination ITO respectively；
Wherein, the first lamination ITO includes the first water mixing transparent conductive layer, and the second lamination ITO includes the second water mixing
Transparent conductive layer.
11. the preparation method of solar energy hetero-junction solar cell according to claim 10, wherein the first lamination ITO is also
Including the first not water mixing ITO layer and the second not water mixing ITO layer；
It is sequentially depositing each ITO layer on the first non-crystalline silicon doped layer, to form on the first non-crystalline silicon doped layer
The step of one lamination ITO is：
The first not water mixing ITO layer is deposited on the first non-crystalline silicon doped layer；
The first water mixing transparent conductive layer is deposited in the first not water mixing ITO layer；
The second not water mixing ITO layer is deposited on the first water mixing transparent conductive layer.
12. the preparation method of solar energy hetero-junction solar cell according to claim 10, wherein the second lamination ITO is also
Including third not water mixing ITO layer and the 4th not water mixing ITO layer；
It is sequentially depositing each ITO layer on the second non-crystalline silicon doped layer, to form on the second non-crystalline silicon doped layer
The step of two lamination ITO is：
Third not water mixing ITO layer is deposited on the second non-crystalline silicon doped layer；
The second water mixing transparent conductive layer is deposited in the third not water mixing ITO layer；
The 4th not water mixing ITO layer is deposited on the second water mixing transparent conductive layer.
13. the preparation method of the solar energy hetero-junction solar cell according to any one of claim 10-13, wherein deposition institute
The step of stating the first water mixing transparent conductive layer or the second water mixing transparent conductive layer be：It is passed through argon at ambient temperature
Gas, oxygen and water vapour deposit the water mixing transparent conductive layer.
14. the preparation method of solar energy hetero-junction solar cell according to claim 13, wherein depositing first water mixing
Keep the flow of water vapour constant in 0.1- during transparent conductive layer or the second water mixing transparent conductive layer
10sccm。
15. the preparation method of the solar energy hetero-junction solar cell according to claim 13 or 14, wherein use magnetron sputtering method
First water mixing transparent conductive layer described in coated film deposition or the second water mixing transparent conductive layer；
Optionally,
The gas flow ratio of the argon gas, the oxygen and the water vapour is (200:10:1)-(400:10:1)；
Pressure when deposition is 0.1-1Pa, and the power density of shielding power supply is 0.5-3W/cm2；
The thickness of the first water mixing transparent conductive layer and the second water mixing transparent conductive layer is 30-50nm.
16. the preparation method of solar energy hetero-junction solar cell according to claim 11 or 12, wherein deposition described first is not
The step of water mixing ITO layer or third not water mixing ITO layer is：At ambient temperature, in the first non-crystalline silicon doped layer or described second
The the first not water mixing ITO layer or third not water mixing ITO layer of deposition of microcrystalline state on amorphous silicon layer doped layer；
Optionally,
At ambient temperature, it is passed through argon gas and oxygen, using magnetron sputtering method in the first non-crystalline silicon doped layer or described
The first not water mixing ITO layer or third not water mixing ITO layer are deposited on two amorphous silicon layer doped layers；
The gas flow ratio of the argon gas and the oxygen is 20:1-60:1；
Pressure when deposition is 0.1-2Pa, and the power density of shielding power supply is 0.5-3W/cm2；
The thickness of the first not water mixing ITO layer and third not water mixing ITO layer is 2-3nm.
17. the preparation method of solar energy hetero-junction solar cell according to claim 11 or 12, wherein deposition described second is not
The step of water mixing ITO layer or the 4th not water mixing ITO layer is：Under the high temperature conditions, in the first water mixing transparent conduction
The the second not water mixing ITO layer or the 4th not water mixing ITO of deposit polycrystalline state on layer or the second water mixing transparent conductive layer
Layer；
Optionally,
The monocrystalline silicon piece is heated to 180 DEG C -200 DEG C, is passed through argon gas and oxygen, is mixed described first using magnetron sputtering method
On water transparent conductive layer or the second water mixing transparent conductive layer the second not water mixing ITO layer of deposit polycrystalline state or
The 4th not water mixing ITO layer；
The gas flow ratio of the argon gas and the oxygen is 20:1-60:1；
Pressure when deposition is 0.1-2Pa, and the power density of shielding power supply is 0.5-3W/cm2；
The thickness of the second not water mixing ITO layer and the 4th not water mixing ITO layer is 30-50nm.
18. the preparation method of the solar energy hetero-junction solar cell according to any one of claim 10-17, wherein the list
Crystal silicon chip is N-shaped monocrystalline silicon piece, and optionally, thickness is 50-300 μm；
Optionally,
The thickness of the first intrinsic amorphous silicon passivation layer and the second intrinsic amorphous silicon passivation layer is 1-20nm；
The thickness of the first non-crystalline silicon doped layer and the second non-crystalline silicon doped layer is 3-20nm, first non-crystalline silicon
Doped layer is P-type non-crystalline silicon doped layer, and the second non-crystalline silicon doped layer is N-type non-crystalline silicon doped layer；Alternatively, described first is non-
Doped polycrystal silicon layer is N-type non-crystalline silicon doped layer, and the second non-crystalline silicon doped layer is P-type non-crystalline silicon doped layer；
Using the described in chemical vapor deposition first intrinsic amorphous silicon passivation layer, the first non-crystalline silicon doped layer, described
Second intrinsic amorphous silicon passivation layer and the second non-crystalline silicon doped layer.
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| WO2019119869A1 (en) * | 2017-12-21 | 2019-06-27 | 君泰创新（北京）科技有限公司 | Hetero-junction solar cell and preparation method therefor |
| CN112186062A (en) * | 2020-09-11 | 2021-01-05 | 隆基绿能科技股份有限公司 | Solar cell and manufacturing method thereof |
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| CN109075218A (en) * | 2017-12-21 | 2018-12-21 | 君泰创新（北京）科技有限公司 | A kind of solar energy hetero-junction solar cell and preparation method thereof |
| WO2019119869A1 (en) * | 2017-12-21 | 2019-06-27 | 君泰创新（北京）科技有限公司 | Hetero-junction solar cell and preparation method therefor |
| CN112186062A (en) * | 2020-09-11 | 2021-01-05 | 隆基绿能科技股份有限公司 | Solar cell and manufacturing method thereof |
| CN112186062B (en) * | 2020-09-11 | 2022-10-04 | 隆基绿能科技股份有限公司 | Solar cell and manufacturing method thereof |
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