CN206558553U - Hall sensor and camera lens module - Google Patents
Hall sensor and camera lens module Download PDFInfo
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- CN206558553U CN206558553U CN201590001011.XU CN201590001011U CN206558553U CN 206558553 U CN206558553 U CN 206558553U CN 201590001011 U CN201590001011 U CN 201590001011U CN 206558553 U CN206558553 U CN 206558553U
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- 230000004888 barrier function Effects 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 33
- 238000009413 insulation Methods 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 239000000945 filler Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 238000007789 sealing Methods 0.000 claims description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 206010048669 Terminal state Diseases 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 20
- 238000000034 method Methods 0.000 description 28
- 239000011347 resin Substances 0.000 description 24
- 229920005989 resin Polymers 0.000 description 24
- 239000010408 film Substances 0.000 description 22
- 230000008569 process Effects 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 238000010276 construction Methods 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 206010020741 Hyperpyrexia Diseases 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 229920000784 Nomex Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004763 nomex Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000007591 painting process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Lens Barrels (AREA)
- Adjustment Of Camera Lenses (AREA)
Abstract
The utility model is related to the few Hall sensor and camera lens module of a kind of slim and small-sized, magnetic characteristic deviation.The metallic plate that lead terminal (21a to 21d) will be formed with is configured on base material (30), by Hall element (10) configuration in the region surrounded by lead terminal, electrode portion (13a to 13d) is electrically connected with lead terminal using wire, using containment member by Hall element, the second face (M2) as the face being connected with wire of wire and lead terminal is sealed, remove base material (30), the first face (M1) of the side opposite with the second face of lead terminal is set to expose from containment member, lead terminal has difference in height (D) on the oval or polygonal periphery on the second surface and centered on the position for loading Hall element, in the position away from mounting Hall element, near side has first position (N1), in the position away from mounting Hall element, remote side has second position (N2), the height that the lead terminal is formed as to the second face of first position is less than the height to the second face of second position.
Description
Technical field
The utility model is related to a kind of Hall sensor and camera lens module.
Background technology
It is used as the sensor for detecting magnetic field, it is known that a kind of Magnetic Sensor of use Hall element.For example, patent document
The Magnetic Sensor constructed without island and its manufacturer of a kind of use small pieces (magnetic sensor chip of Hall element etc.) have been recorded in 1
Method.
Patent document 1：International Publication No. 2014/091714
Utility model content
The problem of utility model will be solved
But, slimming, miniaturization with electronic equipment in recent years, it is desirable to more slim and small-sized hall sensing
Device.In order that the Magnetic Sensor of above-mentioned patent document 1 is thinner, the wire for being connected small pieces with lead terminal is effectively reduced
Height.In order to reduce the height of wire, effectively further it is located at high position in reduction small pieces and lead terminal
Component.In the case of the Magnetic Sensor of patent document 1, it is to have to make small pieces thinner for the overall slimming of Magnetic Sensor
Effect.In addition, in order that the Magnetic Sensor of patent document 1 is more small-sized, effectively between shortening small pieces and lead terminal
Distance.But, when making small pieces thin and shortening the distance between small pieces and lead terminal, problems with can be produced.
The cross section structure figure for the problem of Fig. 1 is for illustrating the Hall sensor involved by the utility model.Fig. 1 is to show
The figure of a part for the manufacturing process of Hall sensor, is shown with chuck 600 and Hall element 510 is placed in by lead end
The process in the region that son 525,527 is surrounded.Lead terminal 525,527 is positioned on base material 530, the back side of Hall element 510
It is formed with insulating barrier 540.Hall element 510 possesses magnet sensing part 512 and electrode portion 513a, 513b.Hall element 510 it is thin and carry
Put the position of Hall element 510 and lead terminal 525, the distance between 527 it is small in the case of, loaded using chuck 600
During Hall element 510, it is possible to which chuck 600 is in contact with lead terminal 525,527.When chuck 600 and lead terminal 525,527
When being in contact, Hall element 510 is possible to the different position in the position that is placed in from generally loaded.The position of Hall element 510
Putting generation deviation can cause the position of magnet sensing part 512 to occur deviation, and deviation occurs for the magnetic characteristic for eventually resulting in Hall sensor.
In addition, A represents the contact site of chuck and lead terminal.
The utility model be in view of so the problem of and complete, its object is to there is provided a kind of slim and small-sized, magnetic
Manufacture method, Hall sensor and the camera lens module of the few Hall sensor of the deviation of characteristic.
The solution used to solve the problem
According to a mode of the present utility model, it is characterized with following items.
(1)；A kind of Hall sensor, possesses：Hall element, it has multiple electrodes portion；Multiple outside terminals, it is configured
Around the Hall element；Multiple wires, the multiple wire by each electrode portion of the multiple electrode portion with it is described many
Each outside terminal of individual outside terminal is electrically connected；And containment member, its by the Hall element, the multiple wire with
And each outside terminal as the face being connected with the wire the second face seal, wherein, each outside terminal with
First face of the opposite side in second face is exposed from the bottom surface of the containment member, and the multiple outside terminal is comprised at least
First outside terminal, first outside terminal surrounds the week in the region of the Hall element on second face and when overlooking
There is difference in height, first outside terminal is using the difference in height as boundary, away from the near side tool of the Hall element on edge
There is first position, there is second position in the side remote away from the Hall element, first outside terminal is formed as：With described
Face on the basis of the bottom surface of containment member, the height to second face of the first position of first outside terminal is less than
To the height in second face of the second position of first outside terminal.
(2)；In (1), the Hall element configuration is in following position：The face on the basis of the bottom surface of the containment member,
Make second face of the first position of the peak than first outside terminal of the Hall element high and than described
Second face of the second position of first outside terminal is low.
(3)；In (1), the height from the reference plane to the peak of the Hall element is set into T, will be from institute
When stating reference plane to the height in second face of the second position and being set to p2, the Hall element, which is configured in, makes p2<T<
The position that 1.5 × p2 is set up.
(4)；In any one of (1)~(3), the multiple outside terminal is also comprising the second outside terminal, outside the 3rd
Portion's terminal and the 4th outside terminal, first outside terminal to the 4th outside terminal are configured to outside described first
The virtual line that terminal and the 3rd outside terminal link is with second outside terminal and the 4th outside terminal are connected
The virtual line of knot intersects when overlooking, Hall element rectangular shaped when overlooking, and is configured in following position：Bowing
Region of four apex configurations of Hall element described in apparent time between first outside terminal and second outside terminal,
Region, the 3rd outside terminal and the 4th outer end between second outside terminal and the 3rd outside terminal
The region between region and the 4th outside terminal and first outside terminal between son.
(5)；In any one of (1)~(3), insulating barrier is also equipped with, the insulating barrier is configured at the Hall element
The face of the side opposite with the face for being configured with the multiple electrode portion, the insulating barrier reveals from the bottom surface of the containment member
Go out.
(6)；In any one of (1)~(3), each outside terminal of the multiple outside terminal is on second face
With the difference in height, each outside terminal has using the difference in height as boundary away from the near side of the Hall element
The first position, has the second position in the side remote away from the Hall element, and each outside terminal is formed as：With
Face on the basis of the bottom surface of the containment member, the height to second face of the first position of each outside terminal is low
Height in second face of the second position to each outside terminal.
(7)；In (6), each outside terminal is when overlooking in round-shaped, the polygon centered on the Hall element
The difference in height is formed on the periphery in the region of the combined shaped of shape or these shapes.
(8)；In (5), the specific insulation of the insulating barrier is 108Ω cm~1020Ω·cm。
(9)；In (5), the insulating barrier is used as filler comprising silica.
(10)；In (9), the size of the filler is more than 5 μm.
(11)；In any one of (1)~(3), the longitudinal length of the Hall sensor for more than 0.2mm and
Below 0.6mm, lateral length is more than 0.4mm and below 1.2mm, and thickness is more than 0.1mm and below 0.3mm.
(12)；In any one of (1)~(3), the rectangular shaped when Hall element is overlooked, longitudinal length is
More than 0.1mm and below 0.4mm, lateral length are more than 0.1mm and below 0.4mm, and thickness is more than 0.05mm and 0.20mm
Below.
(13)；In any one of (1)~(3), the Hall element has the GaAs substrate of half insulation, set
Magnet sensing part on the substrate or in substrate and the multiple electrode portion being connected with the magnet sensing part.
(14)；In any one of (1)~(3), first face of each outside terminal and the dihedron
Into there is nickel plated film.
(15)；In any one of (1)~(3), from the reference plane to described the first of first outside terminal
The height in second face at position is more than 0.02mm and below 0.15mm.
(16)；In any one of (1)~(3), the multiple wire by each electrode portion of the multiple electrode portion with
Second face of the first position of each outside terminal of the multiple outside terminal is electrically connected.
(17)；In any one of (1)~(3), the multiple wire by each electrode portion of the multiple electrode portion with
Second face of the second position of each outside terminal of the multiple outside terminal is electrically connected.
(18)；In any one of (1)~(3), each outside terminal not with the Hall element and other outer
Expose from the side of the containment member terminal relative side in portion's.
(19)；A kind of Hall sensor, possesses：Hall element, it has multiple electrodes portion；Multiple outside terminals, it is matched somebody with somebody
Put around the Hall element；Multiple wires, the multiple wire by each electrode portion of the multiple electrode portion with it is described
Each outside terminal of multiple outside terminals is electrically connected；And containment member, it is by the Hall element, the multiple wire
And the second face as the face being connected with the wire of each outside terminal is sealed, wherein, each outside terminal
First face of the side opposite with second face is exposed from the bottom surface of the containment member, and each outside terminal forms following
Difference in height：From connect the second position of the multiple wire to than the second position closer to first of the Hall element
Position, the height of the second surface side of the second position in face is got lower than with described close on the basis of the bottom surface of the containment member
The height of second surface side of the first position in face on the basis of the bottom surface of envelope component.
(20)；In (19), from the bottom surface of the containment member to the electrode portion of the Hall element with it is described many
The of the height for the contact point that individual wire is in contact less than the first position in face on the basis of the bottom surface of the containment member
The height of two surface sides.
(21)；In (19), by the electrode portion from the bottom surface of the containment member to the Hall element and institute
The height for stating the contact point that multiple wires are in contact is set to T, described second by the face on the basis of the bottom surface of the containment member
When the height of second surface side at position is set to p2, p2 is met<T<1.5×p2.
(22)；In any one of (19)~(21), the difference in height has inclined plane shape in section view or to sealing
The recessed curve shape of the bottom surface side of component.
(23)；In any one of (19)~(21), each outside terminal is when overlooking with the Hall element
Centered on round-shaped, polygonal shape or these shapes combined shaped region periphery on form the height
Difference.
(24)；In any one of (19)~(21), the Hall element have substrate, set on the substrate or
Magnet sensing part in substrate and the multiple electrode portion being connected with the magnet sensing part, the Hall sensor are also equipped with insulating barrier,
The insulating barrier is configured at the face of the opposite side in the face with being configured with the multiple electrode portion of the Hall element, the insulation
Layer exposes from the bottom surface of the containment member.
(25)；In (24), the specific insulation of the insulating barrier is 108Ω cm~1020Ω·cm。
(26)；In (24), the insulating barrier is used as filler comprising silica.
(27)；In (26), the size of the filler is more than 5 μm.
(28)；In any one of (19)~(21), the longitudinal length of the Hall sensor for more than 0.2mm and
Below 0.6mm, lateral length is more than 0.4mm and below 1.2mm, and thickness is more than 0.1mm and below 0.3mm.
(29)；In any one of (19)~(21), the rectangular shaped when Hall element is overlooked, longitudinal length is
More than 0.1mm and below 0.4mm, lateral length are more than 0.1mm and below 0.4mm, and thickness is more than 0.05mm and 0.20mm
Below.
(30)；In (24), the substrate is the GaAs substrate of half insulation.
(31)；In any one of (19)~(21), first face and second face of each outside terminal
It is formed with nickel plated film.
(32)；In any one of (19)~(21), described first from the reference plane to the outside terminal
The height in second face of position is more than 0.02mm and below 0.15mm.
(33)；In any one of (19)~(21), the multiple wire is by each electrode portion of the multiple electrode portion
It is electrically connected with second face of the first position of each outside terminal of the multiple outside terminal.
(34)；In any one of (19)~(21), the multiple wire is by each electrode portion of the multiple electrode portion
It is electrically connected with second face of the second position of each outside terminal of the multiple outside terminal.
(35)；In any one of (19)~(21), each outside terminal not with the Hall element and other
Expose from the side of the containment member the relative side of outside terminal.
(36)；A kind of Hall sensor, possesses：Hall element, it has multiple electrodes portion；Multiple outside terminals, it is matched somebody with somebody
Put around the Hall element；Multiple wires, the multiple wire by each electrode portion of the multiple electrode portion with it is described
Each outside terminal of multiple outside terminals is electrically connected；And containment member, it is by the Hall element, the multiple wire
And the second face as the face being connected with the wire of each outside terminal is sealed, wherein, each outside terminal
First face of the side opposite with second face is exposed from the bottom surface of the containment member, and the multiple outside terminal is at least wrapped
Containing the first outside terminal, first outside terminal has first position and relative to the first position away from the Hall
The second position of element, first outside terminal is formed as：The face on the basis of the bottom surface of the containment member, to described first
The height in second face of the first position of outside terminal is less than the second position to first outside terminal
Second face height.
(37)；In (36), the Hall element configuration is in following position：On the basis of the bottom surface of the containment member
Face, makes second face of the first position of the peak than first outside terminal of the Hall element high and compares institute
Second face for stating the second position of the first outside terminal is low.
(38)；In (36), the height from the reference plane to the peak of the Hall element is set into T, will be from
When the reference plane to the height in second face of the second position is set to p2, the Hall element, which is configured in, makes p2<T
<The position that 1.5 × p2 is set up.
(39)；In any one of (36)~(38), the multiple outside terminal also includes the second outside terminal, the 3rd
Outside terminal and the 4th outside terminal, first outside terminal to the 4th outside terminal are configured to outside described first
The virtual line that portion's terminal and the 3rd outside terminal link with by second outside terminal and the 4th outside terminal
The virtual line of link intersects when overlooking, Hall element rectangular shaped when overlooking, and is configured in following position：
Area of four apex configurations of the Hall element between first outside terminal and second outside terminal during vertical view
Outside region, the 3rd outside terminal and the described 4th between domain, second outside terminal and the 3rd outside terminal
The region between region and the 4th outside terminal and first outside terminal between portion's terminal.
(40)；In any one of (36)~(38), insulating barrier is also equipped with, the insulating barrier is configured at the Hall element
The opposite side in the face with being configured with the multiple electrode portion face, the insulating barrier is from the bottom surface of the containment member
Expose.
(41)；In any one of (36)~(38), each outside terminal of the multiple outside terminal is described second
There is difference in height, each outside terminal has using the difference in height as boundary away from the near side of the Hall element on face
The first position, has the second position in the side remote away from the Hall element, and each outside terminal is formed as：With
Face on the basis of the bottom surface of the containment member, the height to second face of the first position of each outside terminal is low
Height in second face of the second position to each outside terminal.
(42)；In (41), each outside terminal overlook when centered on the Hall element it is round-shaped,
The difference in height is formed on the periphery in the region of the combined shaped of polygonal shape or these shapes.
(43)；In (40), the specific insulation of the insulating barrier is 108Ω cm~1020Ω·cm。
(44)；In (40), the insulating barrier is used as filler comprising silica.
(45)；In (44), the size of the filler is more than 5 μm.
(46)；In any one of (36)~(38), the longitudinal length of the Hall sensor for more than 0.2mm and
Below 0.6mm, lateral length is more than 0.4mm and below 1.2mm, and thickness is more than 0.1mm and below 0.3mm.
(47)；In any one of (36)~(38), the rectangular shaped when Hall element is overlooked, longitudinal length is
More than 0.1mm and below 0.4mm, lateral length are more than 0.1mm and below 0.4mm, and thickness is more than 0.05mm and 0.20mm
Below.
(48)；In any one of (36)~(38), the Hall element has the GaAs substrate of half insulation, set
Put the magnet sensing part on the substrate or in substrate and the multiple electrode portion being connected with the magnet sensing part.
(49)；In any one of (36)~(38), first face and second face of each outside terminal
It is formed with nickel plated film.
(50)；In any one of (36)~(38), described from the reference plane to first outside terminal
The height in second face at one position is more than 0.02mm and below 0.15mm.
(51)；In any one of (36)~(38), the multiple wire is by each electrode portion of the multiple electrode portion
It is electrically connected with second face of the first position of each outside terminal of the multiple outside terminal.
(52)；In any one of (36)~(38), the multiple wire is by each electrode portion of the multiple electrode portion
It is electrically connected with second face of the second position of each outside terminal of the multiple outside terminal.
(53)；In any one of (36)~(38), each outside terminal not with the Hall element and other
Expose from the side of the containment member the relative side of outside terminal.
(54)；A kind of camera lens module, possesses：(1) Hall sensor described in any one in~(53)；Camera lens is kept
Part, it is provided with magnet；And driving coil, its output letter based on the outside terminal output from the Hall sensor
Number move the magnet.
The effect of utility model
According to a mode of the present utility model, using the teaching of the invention it is possible to provide a kind of slim and small-sized, magnetic characteristic deviation is few suddenly
Manufacture method, Hall sensor and the camera lens module of your sensor.
Brief description of the drawings
The cross section structure figure for the problem of Fig. 1 is for illustrating the Hall sensor involved by the utility model.
Fig. 2 (a), Fig. 2 (b) and Fig. 2 (c) are for illustrating the Hall sensor involved by the utility model
The structure chart of embodiment 1.
Fig. 3 is the overall perspective view of the Hall sensor shown in Fig. 2 (a) to Fig. 2 (c).
Fig. 4 (a) and Fig. 4 (b) are the structure charts of specific Hall element.
Fig. 5 is the cross section structure figure for illustrating the Hall sensor involved by the utility model.
Fig. 6 (a) and Fig. 6 (b) are to show to manufacture the metallic plate used during the Hall sensor of present embodiment 1
Figure.
Fig. 7 (a), Fig. 7 (b), Fig. 7 (c), Fig. 7 (d) and Fig. 7 (e) are the manufactures for showing Hall sensor
The top view of the process of method.
Fig. 8 (a), Fig. 8 (b), Fig. 8 (c) and Fig. 8 (d) are the works for the manufacture method for showing Hall sensor
The sectional view of sequence.
Embodiment
In following detailed description, the complete understanding of embodiment of the present utility model is recorded very in order to provide
Many specific details.However, more than one implementation can also be implemented even if without involved specific details by being clear that
Mode.In addition, in order that accompanying drawing is succinct, known construction and device are shown with sketch map.
Hereinafter, it is explained with reference to each embodiment of the present utility model.
<Embodiment 1>
(structure)
Fig. 2 (a) to Fig. 2 (c) is the embodiment 1 for illustrating the Hall sensor involved by the utility model
Structure chart, Fig. 2 (a) is the sectional view splitted along the line A-A in Fig. 2 (b), and Fig. 2 (b) is Fig. 2 (a) top view,
Fig. 2 (c) is Fig. 2 (a) upward view, and Fig. 3 shows the integral vertical of the Hall sensor shown in Fig. 2 (a) to Fig. 2 (c)
Body figure.In addition, Ga represents the positive part for being carried out half-etching, Gb represents the part for being carried out half-etching at the back side.
The Hall sensor 100 of present embodiment 1 possesses Hall element 10, multiple lead terminal 21a to 21d (outer ends
Son), multiple wire 31a to 31d and containment member 50.
Hall element 10 have substrate 11, be arranged on the substrate 11 (or in substrate 11) magnet sensing part 12 and with this
The multiple electrodes portion 13a to 13d that magnet sensing part 12 is connected.In addition, in Fig. 2 (a), illustrating magnet sensing part 12 with amplification and being arranged on
Situation on substrate 11.
In addition, multiple lead terminal 21a to 21d configuration is around Hall element 10, that is to say, that with along sealing structure
Mode of the bottom surface of part 50 around four angles of Hall element 10 is configured.
In addition, multiple wire 31a to 31d by multiple electrodes portion 13a to 13d each electrode portion 13a to 13d respectively with it is multiple
Lead terminal 21a to 21d each lead terminal 21a to 21d electrical connections.
In addition, containment member 50 is by Hall element 10, multiple lead terminal 21a to 21d and multiple wire 31a to 31d
Covering.It is used as containment member 50, the preferably resin component element such as moulded resin.
In addition, each lead terminal 21a to 21d have with above-mentioned each wire 31a to 31d the second face M2 being connected and with
First face M1 of side opposite second face M2, the first face M1 expose from the bottom surface E of containment member 50.
In addition, at least one lead terminal 21a any one into 21d of multiple lead terminal 21a into 21d is second
Face M2 has difference in height D.That is, lead terminal has difference in height.Preferably, all of lead terminal 21a to 21d draw
Line terminals have difference in height D in the second face M2.
In addition, multiple lead terminal 21a to 21d are using difference in height D as boundary, in each lead terminal 21a with difference in height D
The side near away from Hall element 10 to 21d has first position N1, has second position in the side remote away from Hall element 10
N2, the plurality of lead terminal 21a to 21d is configured to：From the bottom surface E to first position N1 of containment member 50 the second face M2's
Height p1 is less than the height p2 of the second face M2 from the bottom surface E to second position N2 of containment member 50.
That is, from the bottom surface E to first position N1 of containment member 50 the second face M2 height p1 with from sealing structure
Relation between the bottom surface E of part 50 to second position N2 the second face M2 height p2 has p1<P2 relation.In addition, respectively leading
Line 31a to 31d is connected the second position N2 of each lead terminal 21a to 21d with difference in height D the second face M2.
In the present embodiment, outside terminal 21a to 21d forms following difference in height：From second of the multiple wires of connection
Position N2 to than second position N2 closer to the first position N1 of Hall element, the second of face on the basis of the bottom surface E of containment member
The height p2 of position N2 the second surface side gets lower than the first position N1 in the face on the basis of the bottom surface E of containment member the second face
The height p1 of side.Difference in height is preferably to have inclined plane shape in section view or to the recessed curve shape of the bottom surface side of containment member
Mode.Difference in height D has flat upper and lower surface, both can be inclined plane shape between upper surface and lower surface, curve
The combination of shape or these shapes, can also from upper surface being combined to inclined plane shape, curve shape or these shapes
Up to the end of outside terminal.
In addition, usually, chuck is used when Hall element 10 is placed in into assigned position.The front end of chuck is generally oval
Shape, polygonal shape, therefore in order to prevent the contact of chuck and multiple lead terminal 21a to 21d, when overlooking with Hall
Difference in height D is provided with the periphery in the region of elliptical shape or polygonal shape centered on element 10.That is, overlooking
When with the configuration Hall element centered on Hall element 10 when the corresponding position of the shape of the front end of chuck that uses be provided with
Difference in height D.In addition, the front end of particularly chuck is mostly round-shaped, therefore in order to prevent the contact of chuck, preferably with Hall
Difference in height D provided circumferentially about centered on element 10.In addition, difference in height D-shaped is into the periphery in the region for surrounding Hall element 10
On.The group of round-shaped, polygonal shape or these shapes when can also be arranged on vertical view centered on Hall element 10
On the periphery in the region for closing shape.Specifically, can enumerate on the periphery in positive round region, on the periphery of elliptic region, it is polygon
On the periphery in shape region, the periphery of curve and the region of the shape of Straight Combination is first-class.
In addition, at least one lead terminal of multiple lead terminal 21a into 21d has difference in height D, and with p1<
P2 relation, thus, it is possible to suppress wire and lead terminal side edge touch and cause broken string.In addition, whole from Hall sensor
The intensity this respect of body considers, the area of the first position N1 on lead terminal preferably is set into area as small as possible.
In the case where lead terminal 21a the second face M2 has multiple differences in height, by the height nearest away from Hall element 10
Degree difference is set to difference in height D, using difference in height D as boundary, will be set to first position N1 away from the near side of Hall element 10, will be away from Hall
The remote side of element 10 is set to second position N2.Lead terminal 21b to 21d is similarly.It is formed at using the sealing of containment member 50
Lead terminal 21a to 21d the second face M2 difference in height D.
In addition, being configured to be less than from close from the bottom surface E to first position N1 of containment member 50 the second face M2 height p1
Seal component 50 bottom surface E to Hall element 10 peak height h1.In the case of this example, the peak of Hall element 10
Be each electrode portion 13a to 13d, therefore be configured to height p1 and be less than each electricity from the bottom surface E of containment member 50 to Hall element 10
Pole portion 13a to 13d height h1.
Height p1 from the bottom surface E to first position N1 of containment member 50 the second face M2, the bottom surface from containment member 50
E to second position N2 the second face M2 height p2 and from the bottom surface E of containment member 50 to the peak of Hall element 10
Height h1 has p1<h1<P2 relation.That is, electrode portion from the bottom surface E of containment member 50 to Hall element with it is multiple
The height h1 for the contact point that wire is in contact is less than the second face of the first position N1 in face on the basis of the bottom surface E of containment member 50
The height p1 of side.
It is thin and height of peaks of the bottom surface E to Hall element 10 from containment member 50 is less than the bottom of from Hall element 10
In the case of the structure of the height of peaks of the face E to lead terminal 21a to 21d, particularly the front end of chuck is easily and lead
Terminal 21a to 21d is in contact, therefore difference in height D is especially effective in the case of that construction.
In addition, being configured to from the bottom surface E of containment member 50 to each electrode portion 13a to 13d and each wire 31a is to 31d
The first tie point a height h1 be less than from the bottom surface E of containment member 50 to each lead terminal 21a to 21d and each wire 31a
To the height h2 of the second tie point b between 31d.
That is, the height h1 from the bottom surface E to the first tie point a of containment member 50 and the bottom from containment member 50
Face E to the second tie point b height h2 have h1<H2 relation.
The Hall sensor of present embodiment 1 has h1<H2 relation, therefore wire 31a is difficult to and Hall element to 31d
Substrate 11 side edge touch so that be difficult to produce leakage current.It is slim and being capable of detection magnetic exactly thereby, it is possible to realize
Hall sensor.
In addition, the Hall sensor of present embodiment 1 is the easily edge of generation lead terminal and the structure of the contact of wire
Make, but on the EDGE CONTACT of lead terminal, the lead terminal simply as wire and same potential is in two place connections
State, therefore it is not special the problem of.
In addition, each lead terminal 21a to 21d exposes from the side S of containment member 50.That is, due to lead terminal
21a to 21d exposes from the side S of containment member 50, therefore except the bottom surface in lead terminal 21a to 21d can be used to expose
Part (bottom-side electrodes) come outside being installed, additionally it is possible to pacified using in the part (side electrode) exposed of side
Dress.Particularly, it is possible to increase the thickness of side electrode ratio shared in overall thickness, therefore it is easily installed.In addition, drawing
The loose contact of line terminals and solder and can not realize that the situation of conducting tails off so that installation reliability is high.Also, solder is installed
Visual confirmation during rear visual examination is improved, and can be easily verified that and be completed welding whether without any problems.
In addition, using multiple electrodes portion 13a to 13d as first time engagement, multiple lead terminal 21a to 21d second position
N2 the second face M2 carries out wire bonding for the mode of second of engagement to multiple wire 31a to 31d.
So, from a low direction, a high side carries out wire bonding, therefore the edge of lead and Hall element is difficult to connect
Touch.Thus, also it is difficult to cause EDGE CONTACT even if the distance between shortening Hall element and lead terminal.Thereby, it is possible to shorten
The distance between Hall element and lead terminal, so as to realize miniaturization.
Or, using multiple lead terminal 21a to 21d second position N2 the second face M2 as first time engagement, Duo Ge electricity
Pole portion 13a to 13d carries out wire bonding for the mode of second of engagement to multiple wire 31a to 31d.
So, from a high direction, a low side carries out wire bonding, therefore, it is possible to reduce the summit of wire bonding, so that
Slimming can be realized.
Alternatively, it is also possible to using multiple electrodes portion 13a to 13d as first time engagement, multiple lead terminal 21a to 21d the
One position N1 the second face M2 carries out wire bonding for the mode of second of engagement to multiple wire 31a to 31d.
Furthermore it is also possible to by first time engagement of multiple lead terminal 21a to 21d first position N1 the second face M2,
Multiple electrodes portion 13a to 13d carries out wire bonding for the mode of second of engagement to multiple wire 31a to 31d.
In addition, be also equipped with insulating barrier 40, the insulating barrier 40 be arranged at substrate 11 with being provided with multiple electrodes portion 13a extremely
The face of the opposite side in 13d face.The insulating barrier 40 exposes from the bottom surface E of containment member 50.
In present embodiment 1, as insulating barrier 40, insulating resin layer, insulating trip etc. can be enumerated.It is used as insulating barrier
40, as long as the resistance of resistance ratio Hall element is high.For example, the specific insulation of insulating barrier 40 is preferably 108(Ω·cm)
~1020(Ω·cm).The specific insulation of insulating barrier 40 is more preferably 1010(Ω cm)~1018(Ω·cm).In insulating barrier
40 be that the resistance of insulating barrier 40 is 10 in the case that the square and thickness that the length of side is several mm are several μm10(Ω)~1018
(Ω), the resistance of Hall element is typically about 109Below Ω, therefore with enough insulating properties.
On insulating barrier 40, it is further preferred that as its composition, such as the thermohardening type resin containing epoxy, as
Filler, such as containing silica (SiO2).The back side of insulating barrier 40 and Hall element 10, that is with magnet sensing part 12
The face of the opposite side in face connects, and the back side of Hall element 10 is covered by the insulating barrier 40.The overall quilt in the back side of Hall element 10
It is preferred that insulating barrier 40, which is covered from suppressing from the viewpoint of leakage current is produced,.Covering Hall element 10 in insulating barrier 40
The thickness of the part at the back side determines by filler size, for example, more than 5 μm.
GaAs (GaAs) substrate 11 for example with half insulation of Hall element 10, it is formed on the GaAs substrates 11
The magnet sensing part (active layer) 12 comprising semiconductive thin film and the electrode portion 13a to 13d that is electrically connected with magnet sensing part 12.Feel magnetic
Portion 12 is cross (Cross) type for example when overlooking, and electrode 13a to 13d is respectively arranged with four leading sections of cross.
Opposite a pair of electrodes 13a, 13c is the input terminal for making current flow through magnet sensing part 12 during vertical view, when overlooking with by electricity
Opposite another pair electrode 13b, 13d are to be used to export electricity from magnet sensing part 12 on the orthogonal direction of line that pole 13a, 13c links
The lead-out terminal of pressure.In order that the thickness of thin of Hall element 10, as long as to substrate 11 with being provided with magnet sensing part (active layer) 12
The face of the opposite side in face be ground.On the size of Hall element 10, such as longitudinal length be more than 0.1mm and
Below 0.4mm, lateral length is more than 0.1mm and below 0.4mm, and thickness is more than 0.05mm and below 0.20mm.
Hall sensor 100 is no island construction, with multiple lead terminal 21a for acquisition and outside electrical connection extremely
21d.As shown in Fig. 2 (b), lead terminal 21a to 21d is configured in around Hall element 10, such as Hall sensor 100
Four angles near.For example, lead terminal 21a and lead terminal 21c is so that across Hall element 10, opposite mode is configured.
In addition, lead terminal 21b and lead terminal 21d is so that across Hall element 10, opposite mode is configured.Also, lead terminal 21
To 21d be respectively configured as by the straight line (dummy line) of lead terminal 21a and lead terminal 21c links with by lead terminal 21b
The straight line (dummy line) linked with lead terminal 21d intersects when overlooking.
That is, multiple lead terminals include the first lead terminal, the second lead terminal, the 3rd lead terminal and the
Four lead terminals, the first lead terminal to the 4th lead terminal is configured as the first lead terminal and the link of the 3rd lead terminal
Virtual line with by the second lead terminal and the 4th lead terminal link virtual line overlook when intersect.
Lead terminal 21a to 21d metals such as containing copper (Cu).Alternatively, it is also possible to lead terminal 21a to 21d's
The part at this surface side or the back side is etched (i.e. half-etching).
In addition, though it is not illustrated, from the viewpoint of electrical connection, the front preferably in lead terminal 21a to 21d
(upper surface side in Fig. 2 (a)), pass through wire 31a to the 31d lead terminal 21a to 21d being connected front plating Ag.
Alternatively, it is also possible to be, in lead terminal 21a to 21d front and back nickel plating (Ni)-palladium (Pd)-gold (Au)
Deng to replace shell coating 60.Although Hall sensor, it is difficult to due to being no island construction by the Ni as magnetic
The influence of plated film, therefore, it is possible to implement.
Wire 31a to 31d is electrode portion 13a to 13d and lead terminal 21a to 21d point with Hall element 10
The wire not electrically connected, such as containing golden (Au).As shown in Fig. 2 (b), wire 31a is by lead terminal 21a and electrode portion 13a
Lead terminal 21b is connected by connection, wire 31b with electrode portion 13b.In addition, wire 31c is by lead terminal 21c and electrode portion 13c
Lead terminal 21d is connected by connection, wire 31d with electrode 13d.
That is containment member 50 protects lead terminal 21a to 21d at least face side by resin seal covering
Face, Hall element 10 and the wire 31a to 31d for the side being connected with wire.Such as heat containing epoxy of containment member 50
Gel-type resin, can be resistant to hyperpyrexia when carrying out Reflow Soldering.In addition, containment member 50 and insulating barrier 40 are for example even in containing phase
In the case of the thermohardening type resin of same epoxy, their material is also different.For example, contained composition is different,
Or although contained composition is identical, content ratio is different.
In addition, as shown in Fig. 2 (c), bottom surface side in Hall sensor 100, that is installed in circuit board
Side, at least a portion at each lead terminal 21a to the 21d back side and at least a portion of insulating barrier 40 are respectively from containment member
50 expose.
In addition, shell coating 60 is formed at lead terminal 21a to the 21d back side exposed from containment member 50.Shell is plated
Layer 60 is such as containing tin (Sn).
According to this structure, in the case where using the detection magnetic of Hall sensor 100 (magnetic field), such as by lead terminal
21a is connected with power supply potential (+), and lead terminal 21c is connected with earthing potential (GND), to make electric current from lead terminal
21a flows to lead terminal 21c.Moreover, determining the potential difference V1-V2 (hall output voltage VH) between lead terminal 21b, 21d.
According to the size in hall output voltage VH size detection magnetic field, according to the side in hall output voltage VH positive and negative detection magnetic field
To.
That is, lead terminal 21a is the power supply lead terminal for supplying assigned voltage to Hall element 10.Lead terminal
21c is the earthy lead terminal for supplying earthing potential to Hall element 10.Lead terminal 21b, 21d are to be used to take out suddenly
The signal taking-up lead terminal of the hall electromotive force signal of your element 10.
Fig. 4 (a), (b) is the structure chart of specific Hall element, and Fig. 4 (a) shows sectional view, and Fig. 4 (b) is shown
Top view.But, do not illustrate wire.Reference Ga represents the positive part for being carried out half-etching in figure, and Gb is represented
The part for being carried out half-etching at the back side.In addition, the sectional view in Fig. 2 (a) represents what is splitted along the line A-A of Fig. 2 (b)
Sectional view, but the sectional view of Fig. 4 (a) represents the sectional view splitted along the line B-B of Fig. 4 (b).
Hall sensor shown in Fig. 4 (a), (b) uses the contact being designed to chuck few lead end as far as possible
Son, the surface of lead terminal has been carried out half-etching.That is, the region that chuck is disturbed has been carried out half-etching.
The Hall element of Hall sensor shown in Fig. 4 (b) is configured as passing relative to the Hall shown in Fig. 2 (b)
The Hall element of sensor rotates 45 degree.That is, the rectangular shaped when Hall element of the Hall sensor shown in Fig. 4 (b) is overlooked,
And four summits that Hall element is configured as the rectangle are configured in lead terminal 21a and lead terminal respectively when overlooking
Between region, lead terminal 21c and the lead terminal 21d between region, lead terminal 21b and lead terminal 21c between 21b
Region, lead terminal 21d and lead terminal 21a between region.
By the way that Hall element is configured into this direction, Hall sensor integral miniaturization can be made.But, match somebody with somebody when so
When putting Hall element, when loading Hall element, chuck is easily in contact with lead terminal, therefore is being configured so that Hall element
In the case of, set difference in height D especially to have for the contact for preventing chuck in lead terminal 21a to 21d the second face M2
Effect.In addition, above-mentioned rectangle includes square.
In present embodiment 1, it is used to load suddenly between Hall element 10 and the bottom surface E of containment member 50 not have
It is illustrated centered on the metal Dao Wu islands construction of your element 10, but can also be in Hall element 10 and sealing structure
Island is set between the bottom surface E of part 50.In addition, the island can also be electrically connected with earthy lead terminal 21c.But, from slimming
From the viewpoint of, preferably it is not provided with island between Hall element 10 and the bottom surface E of containment member 50.
In addition, in present embodiment 1, so that all there is height in multiple lead terminal 21a to 21d all lead terminals
Son is illustrated in case of poor D, but does not need lead terminal 21a to 21d all to have difference in height D, as long as drawing
At least one lead terminal of line terminals 21a into 21d has difference in height D.
In addition, in present embodiment 1, with the height of the second face M2 from the bottom surface E of containment member 50 to first position N1
Spend p1, height p2 and the bottom surface E from containment member 50 from the bottom surface E to second position N2 of containment member 50 the second face M2
There is p1 to the relation between the height h1 of the peak of Hall element 10<h1<Said centered on the situation of p2 relation
It is bright, but can also be p2<h1.Even if p2<H1, difference in height D are also effective for the contact for preventing chuck.For example,
In p2<h1<1.5 × p2 situation, p2<h1<1.3 × p2 situation, p2<h1<The p2 such as 1.1 × p2 situation and h1 are almost
In the case of identical height, difference in height D is especially effective for the contact for preventing chuck.P2 is, for example, more than 0.05mm
And below 0.20mm, h1 are, for example, more than 0.05mm and below 0.20mm, p1 is, for example, more than 0.02mm and below 0.15mm.
In addition, in present embodiment 1, with from the bottom surface E of containment member 50 to the first tie point a height h1 in each electricity
Son is illustrated in case of pole portion 13a is all equal into 13d, but connects from the bottom surface E to first of containment member 50
Contact a height h1 can also electrode portion 13a into 13d it is different.In addition, similarly, from the bottom surface E of containment member 50
To the second tie point b height h2 can also each lead terminal 21a into 21d it is different.Shared it will led with one
In the case that the electrode portion and lead terminal of line connection are set to a unit, height h1 is met at least one unit<Highly
H2.However, it is preferred to meet height h1 in all units<Height h2.
Fig. 5 is the cross section structure figure for illustrating the Hall sensor involved by the utility model.Due to be it is described later suddenly
Hall element arrangement step in the manufacture method of your sensor, thus while base material 30 is described, but the base material 30 makes
What lead terminal 21a to 21d the first face M1 exposed is removed when exposing process.
Hall element 10 is configured in following position：The face M on the basis of the bottom surface of containment member 50, makes Hall element 10 most
Second face M2s of the high point T than the first position N1 of lead terminal is high and the second face M2 of than second position N2 is low.That is,
Height t from the bottom surface E of containment member 50 to the peak T of Hall element 10, bottom surface E to first from containment member 50
Position N1 the second face M2 height p1 and the second face M2 from the bottom surface E to second position N2 of containment member 50 height p2 tools
There is p1<t<P2 relation.
In addition, multiple lead terminal 21a to 21d comprising the first lead terminal, the second lead terminal, the 3rd lead terminal with
And the 4th lead terminal, the first lead terminal to the 4th lead terminal is configured as the first lead terminal and the 3rd lead terminal
The virtual line of link is with the second lead terminal and the virtual line of the 4th lead terminal link are intersected when overlooking.Hall member
The rectangular shaped when overlooking of part 10, the Hall element 10 is configured in following position：Four of Hall element 10 when overlooking
Between region, the second lead terminal and the 3rd lead terminal of the apex configuration between the first lead terminal and the second lead terminal
Region, the 3rd lead terminal and the 4th lead terminal between region and the 4th lead terminal and the first lead terminal between
Region.
In addition, possess insulating barrier 40, the insulating barrier 40 be configured at Hall element 10 with configuration multiple electrodes portion 13a extremely
The face of the opposite side in 13d face, the insulating barrier 40 exposes from the bottom surface E of containment member 50.
In addition, each lead terminal on the second face M2 have difference in height D, each lead terminal using difference in height D for demarcate,
There is first position N1 away from the near side of Hall element 10, there is second position N2 in the side remote away from Hall element 10, this is each
Lead terminal is formed as：The face M on the basis of the bottom surface E of containment member 50, to the first position N1 of each lead terminal the second face
M2 height p1 is less than the height p2 to second position N2 the second face M2.That is, from the bottom surface E of containment member 50 to
One position N1 the second face M2 height p1 and bottom surface E to second position N2 from containment member 50 the second face M2 height p2
With p1<P2 relation.
On the size of Hall sensor 100, such as longitudinal length is more than 0.2mm and below 0.6mm, and lateral length is
More than 0.4mm and below 1.2mm, thickness are more than 0.1mm and below 0.3mm.
(manufacture method)
Fig. 6 (a) and (b) is the figure for showing to manufacture the metallic plate used during the Hall sensor of present embodiment 1.Fig. 6
(a) be front elevation, Fig. 6 (b) is back view.Metallic plate 120 is the part phase as lead terminal of each Hall sensor
Construction even.Reference H represents hole portion in figure, and dash area represents half-etched regions.It it is one by the region of dotted line
Region used in Hall sensor, passes through in addition, the region between dotted line and dotted line is the tooth cut when being cut
Region B (kerf width).
In the manufacture method of the Hall sensor of present embodiment 1, the Hall sensor possesses multiple lead terminal 21a
Hall element 10 to 21d, with multiple electrodes portion 13a to 13d and each lead end by multiple lead terminal 21a to 21d
Multiple wire 31a to 31d that son and multiple electrodes portion 13a to 13d each electrode portion are electrically connected, the system of the Hall sensor
Making method includes following process：Lead terminal arrangement step, the metallic plate 120 for being formed with multiple lead terminal 21a to 21d is matched somebody with somebody
Put on base material；Hall element arrangement step, Hall element 10 is configured in the area surrounded by multiple lead terminal 21a to 21d
Domain；Process is connected, is electrically connected multiple electrodes portion 13a to 13d with multiple lead terminals using multiple wire 31a to 31d；Sealing
Process, utilizes containment member being connected Hall element 10, multiple wire 31a to 31d and each lead terminal as with wire
Face the second face M2 sealing；And expose process, base material is removed, makes the side opposite with the second face M2 of each lead terminal
First face M1 exposes from containment member 50.
In addition, multiple lead terminals comprise at least the first lead terminal, the first lead terminal is on the second face M2 and overlooks
When elliptical shape centered on loading the position of Hall element 10 or polygonal shape region periphery on there is difference in height
D, the first lead terminal is using difference in height D as boundary, and in the position away from mounting Hall element 10, near side has first position N1,
In the position away from mounting Hall element 10, remote side has second position N2, on the first lead terminal, matches somebody with somebody by metallic plate
When putting on base material, the face M on the basis of the face of the configuration metallic plate 120 of base material, to first position N1 the second face M2 height
P1 is less than the height p2 to second position N2 the second face M2.That is, the height p1 of the second face M2 to first position N1
There is p1 with the height p2 of the second face M2 to second position N2<P2 relation.
In addition, the region of elliptical shape of first lead terminal when overlooking centered on loading the position of Hall element 10
Periphery on have difference in height D.In addition, circumference of the lead terminal when overlooking centered on loading the position of Hall element 10
It is upper that there is difference in height D.
Chuck of first lead terminal on the second face M2 and when overlooking and centered on loading the position of Hall element 10
The corresponding position of shape of front end there is difference in height D, lead terminal is using difference in height D as boundary, away from mounting Hall element 10
The near side in position there is first position N1, in the position away from mounting Hall element 10, remote side has second position N2,
First lead terminal is formed as, the face M on the basis of the face of the configuration metallic plate 120 of base material 30, to the first position of lead terminal
N1 the second face M2 height p1 is less than the height p2 of the second face M2 to the second position N2 of lead terminal.
In addition, including following process in Hall element arrangement step：With the face of the configuration metallic plate 120 of base material 30
On the basis of face M when, Hall element 10, which is configured, makes the peak T of the Hall element 10 than the first of lead terminal 21a to 21d
Position N1 the second face M2 height and position low the second face M2 of the second position N2 than lead terminal 21a to 21d.
In addition, following process can also be included in Hall element arrangement step：Hall element 10, which is configured, makes Hall
Position higher than second position N2 the second face M2 the peak T of element 10.Even if p2<T, difference in height D is for preventing chuck
It is also effective for contact.For example, in p2<T<1.5 × p2 situation, p2<T<1.3 × p2 situation, p2<T<1.1×p2
The p2 and T such as situation be almost identical height in the case of, difference in height D is especially effective for the contact for preventing chuck.
In addition, multiple lead terminal 21a to 21d comprising the first lead terminal, the second lead terminal, the 3rd lead terminal with
And the 4th lead terminal, the first lead terminal to the 4th lead terminal is configured as the first lead terminal and the 3rd lead terminal
The virtual line of link is with the second lead terminal and the virtual line of the 4th lead terminal link are intersected when overlooking, Hall member
The rectangular shaped when overlooking of part 10, includes following process in Hall element arrangement step：Hall element 10 is configured to
Region of four apex configurations of Hall element 10 between the first lead terminal and the second lead terminal, the second lead during vertical view
Region between region, the 3rd lead terminal and the 4th lead terminal and the 4th lead between terminal and the 3rd lead terminal
Region between terminal and the first lead terminal.
In addition, including insulating barrier formation process, forming insulating barrier 40 between base material 30 and Hall element 10, exposing work
Sequence includes the process for making insulating barrier 40 expose from containment member 50.
In addition, each lead terminal of multiple lead terminals has difference in height D on the second surface, each lead terminal is with difference in height
D is boundary, and in the position away from mounting Hall element 10, near side has first position N1, away from mounting Hall element 10
The remote side in position has second position N2, and each lead terminal is formed as：When by metallic plate configuration on base material, with base material 30
Configuration metallic plate 120 face on the basis of face M, to the first position N1 of each lead terminal the second face M2 height p1 less than arriving
Second position N2 the second face M2 height p2.
Fig. 7 (a) to Fig. 7 (e) is the top view of the process for the manufacture method for showing Hall sensor.In addition, in Fig. 7
(a) into Fig. 7 (e), the region between dotted line and dotted line is the region B (otch that tooth passed through cut when being cut
Width).
As shown in Fig. 7 (a), prepare to be formed with the metallic plate 120 of above-mentioned lead terminal first.The metallic plate 120 has
It is constructed as below：Lead terminal 21a to 21d shown in multiple Fig. 2 (b) phase in the longitudinal and lateral directions when overlooking
Even.The material of metallic plate 120 is, for example, copper.
Then, as shown in Fig. 7 (b), for example, metallic plate will be pasted onto as the face of a side of the heat resistance film 80 of base material
120 rear side.The adhesive linkage of insulating properties is for example coated with the face of a side of the heat resistance film 80.On adhesive linkage, as
Its composition, such as using silicones as substrate.It is easy to metallic plate 120 being pasted on heat resistance film 80 by the adhesive linkage.By inciting somebody to action
Heat resistance film 80 is pasted on the rear side of metallic plate 120, as with heat resistance film 80 by the insertion region of the insertion of metallic plate 120 from
The state that the rear side of metallic plate 120 is blocked.
In addition, being heat resistance film 80 as base material, the resinous glue with viscosity and with heat resistance is preferably used
Band.
On viscosity, the glue thickness of preferably adhesive linkage is thinner.In addition, on heat resistance, it is necessary to resistance to about 150 DEG C~200 DEG C
Temperature.As this heat resistance film 80, for example, it can use Kapton Tape.Kapton Tape has resistance to about 280 DEG C
Heat resistance.Kapton Tape with this high-fire resistance is applied when can also be resistant to molding after, wire bonding
Plus hyperpyrexia.In addition, as heat resistance film 80, in addition to Kapton Tape, additionally it is possible to use following adhesive tape.
(1) polyester tape；Heat resisting temperature is about 130 DEG C (still, according to use condition, heat resisting temperature reaches about 200 DEG C).
(2) Teflon (Teflon, registration mark) adhesive tape；Heat resisting temperature is about 180 DEG C
(3) PPS (polyphenylene sulfide)；Heat resisting temperature is about 160 DEG C
(4) glass cloth；Heat resisting temperature is about 200 DEG C
(5) the U.S. paper (Nomex paper) of promise；Heat resisting temperature is about 150 DEG C~200 DEG C
(6) in addition, additionally it is possible to be used as using aramid paper (Aramid paper), crepe paper (Crepe paper)
Heat resistance film 80.
Then, being coated with by lead terminal 21a to the 21d regions surrounded in the face with adhesive linkage of heat resistance film 80
Insulating paste.Here, the application conditions (the scope, the thickness of coating such as coating) of adjustment insulating paste, to avoid in the completed
Hall sensor 100 in the part at the back side of Hall element 10 expose from the containment members such as moulded resin 50.
Then, as shown in Fig. 7 (c), Hall element 10 is positioned in the area for being coated with insulating paste in heat resistance film 80
Domain (carries out chip engagement).Then, it is heat-treated and (is solidified) upon engagement, insulating paste solidification is formed insulating barrier
40。
Then, as shown in Fig. 7 (d), wire 31a to 31d one end is connected with each lead terminal 21a to 21d respectively
Connect, wire 31a to the 31d other end is connected with electrode portion 13a to 13d (carries out wire bonding) respectively.Fig. 7 (e) be
The back view of Fig. 7 (d).
Then, with moulded resin 50 by integral sealing (carrying out resin seal).For example carried out using transfer modling technology
The resin seal.
Fig. 8 (a) to Fig. 8 (d) is the sectional view of the process for the manufacture method for showing Hall sensor.Such as Fig. 8 (a)
It is shown, prepare the molding die 90 for possessing lower mould 91 and mold 92, the metallic plate 120 after wire bonding is configured in the mould
In the cavity of molding jig 90.Then, the moulded resin 50 heated after melting is injected and is filled into cavity i.e. heat resistance film 80
The face (i.e. the face Nian Jie with metallic plate 120) with adhesive linkage 130 side.Thus, to Hall element 10, metallic plate 120
At least face side and wire 31a to 31d carry out resin seal.If further having carried out heating and making to moulded resin 50
It solidifies, then takes out the moulded resin 50 from molding die.In addition it is also possible in mould in arbitrary process after resin seal
Positive such as label symbol (not shown) of resin 50 processed.
Then, as shown in Fig. 8 (b), heat resistance film 80 is peeled off from insulating barrier 40 and moulded resin 50.Thus, make absolutely
Edge layer 40 stays in the back side of Hall element 10, and heat resistance film 80 is peeled off from insulating barrier 40 and moulded resin 50.
Then, as shown in Fig. 8 (c), to face (at least each lead terminal exposed from moulded resin 50 of metallic plate 120
21a to the 21d back side exposed from moulded resin 50) implement shell plating, to form shell coating 60a to 60d.
Then, as shown in Fig. 8 (d), to the upper surface of moulded resin 50 (i.e. Hall sensor 100 with shell
The face of the opposite side in coating 60a to 60d face) paste dicing tape 93.Then, for example make shown in (e) of the blade along Fig. 7
Virtual double dot dash line relatively moved relative to metallic plate 120, moulded resin 50 and metallic plate 120 are cut off (to enter
Row cutting).That is, moulded resin 50 and metallic plate 120 are entered by each Hall element 10 in multiple Hall elements 10
Row cuts and makes its singualtion.Metallic plate 120 after being cut turns into lead terminal 21a to 21d.
After above process, the Hall sensor 100 shown in Fig. 2 (a) to Fig. 2 (c) is completed.
<Embodiment 2>
Below, embodiment 2 is illustrated.In above-mentioned present embodiment 1, to being used as covering Hall member using insulating paste
The situation of the insulating barrier 40 at the back side of part 10 is illustrated.However, in present embodiment 2, insulating barrier 40 is not limited to absolutely
Edge cream.As insulating barrier 40, for example, it can also use chip attachment film, that is the one-piece type film of dicing/die engagement is viscous
Connect layer.
According to this structure, following this effect is played.Covered that is, being used as using the adhesive linkage of chip attachment film
The insulating barrier at the back side of lid Hall element 10.Thereby, it is possible to save the painting process of insulating paste, therefore, it is possible to contribute to process number
Reduction.
<Embodiment 3>
The camera lens module of present embodiment possesses：Hall sensor；Lens holders, it is provided with magnet；And driving
Coil, it moves magnet based on the hall electromotive force signal of the output signal as the outside terminal output from Hall sensor
It is dynamic.The Hall sensor of present embodiment is slim, small-sized Hall sensor, and the deviation of magnetic characteristic is small, therefore, it is possible to
Magnetic field is detected exactly.Therefore, it is possible to minimize camera lens module, and accurate position detection can be carried out.Utilize this implementation
The Hall sensor detection of mode is installed on the magnetic field of the magnet of lens holders, and makes drive based on the output signal detected
Streaming current flows through driving coil, thus, it is possible to accurately carry out auto focus control, handshaking Corrective control.In addition, this reality
Applying the Hall sensor of mode realizes slimming, miniaturization, therefore, it is possible to make the position of the Hall element inside Hall sensor
Put and be closely located to magnet, thus allow for the magnetic detection of higher precision.
As described above, the utility model is illustrated with reference to specific embodiment, but is not intended to say by these
It is bright that utility model is defined.By referring to explanation of the present utility model, those skilled in the art are clear that disclosed
Embodiment various modifications example and other embodiment of the present utility model.Thus, it is understood that being, claim is also
Cover these variations or embodiment that technical scope of the present utility model and main idea are included.
Description of reference numerals
10：Hall element；11：Substrate；12：Magnet sensing part；13a to 13d：Electrode portion；21a to 21d：Lead terminal；30：Base
Material；31a to 31d：Wire；40：Insulating barrier；50：Containment member；60a to 60d：Shell coating；80：Heat resistance film；90：Molding
Mould；91：Lower mould；92：Mold；93：Dicing tape；100：Hall sensor；120：Metallic plate；130：Adhesive linkage；
510：Hall element；512：Magnet sensing part；513a、513b：Electrode portion；525、527：Lead terminal；530：Base material；540：Insulation
Layer；600：Chuck.
Claims (54)
1. a kind of Hall sensor, it is characterised in that possess：
Hall element, it has multiple electrodes portion；
Multiple outside terminals, it is configured around the Hall element；
Multiple wires, the multiple wire is by each outside of each electrode portion of the multiple electrode portion and the multiple outside terminal
Terminal is electrically connected；And
Containment member, its using the Hall element, the multiple wire and each outside terminal as with the wire
The second face sealing in the face of connection,
Wherein, the first face of the side opposite with second face of each outside terminal is revealed from the bottom surface of the containment member
Go out,
The multiple outside terminal comprises at least the first outside terminal,
Have on the periphery in the region that first outside terminal surrounds the Hall element on second face and when overlooking
Difference in height,
First outside terminal has first position using the difference in height as boundary away from the near side of the Hall element,
There is second position in the side remote away from the Hall element,
First outside terminal is formed as：The face on the basis of the bottom surface of the containment member, to first outside terminal
The height in second face of the first position is less than described second to the second position of first outside terminal
The height in face.
2. Hall sensor according to claim 1, it is characterised in that
The Hall element configuration is in following position：The face on the basis of the bottom surface of the containment member, makes the Hall element
Peak is higher than second face of the first position of first outside terminal and than the institute of first outside terminal
Second face for stating second position is low.
3. Hall sensor according to claim 1, it is characterised in that
The height from the reference plane to the peak of the Hall element is set into T, will be from the reference plane to described
When the height in second face at two positions is set to p2, the Hall element, which is configured in, makes p2<T<The position that 1.5 × p2 is set up
Put.
4. the Hall sensor according to any one of claims 1 to 3, it is characterised in that
The multiple outside terminal also includes the second outside terminal, the 3rd outside terminal and the 4th outside terminal,
First outside terminal to the 4th outside terminal is configured to outside first outside terminal and the described 3rd
The virtual line that terminal links is overlooked with the virtual line for linking second outside terminal and the 4th outside terminal
When intersect,
Hall element rectangular shaped when overlooking, is configured in following position：The four of the Hall element when overlooking
Region, second outside terminal and institute of the individual apex configuration between first outside terminal and second outside terminal
State region between region, the 3rd outside terminal and the 4th outside terminal between the 3rd outside terminal and described
Region between 4th outside terminal and first outside terminal.
5. the Hall sensor according to any one of claims 1 to 3, it is characterised in that
Insulating barrier is also equipped with, the face with being configured with the multiple electrode portion that the insulating barrier is configured at the Hall element is opposite
The face of side, the insulating barrier exposes from the bottom surface of the containment member.
6. the Hall sensor according to any one of claims 1 to 3, it is characterised in that
Each outside terminal of the multiple outside terminal has the difference in height on second face,
Each outside terminal has described first using the difference in height as boundary away from the near side of the Hall element
Position, has the second position in the side remote away from the Hall element,
Each outside terminal is formed as：The face on the basis of the bottom surface of the containment member, described in each outside terminal
The height in second face of first position is less than the height to second face of the second position of each outside terminal
Degree.
7. Hall sensor according to claim 6, it is characterised in that
Each outside terminal when overlooking the round-shaped, polygonal shape centered on the Hall element or these
The difference in height is formed on the periphery in the region of the combined shaped of shape.
8. Hall sensor according to claim 5, it is characterised in that
The specific insulation of the insulating barrier is 108Ω cm~1020Ω·cm。
9. Hall sensor according to claim 5, it is characterised in that
The insulating barrier is used as filler comprising silica.
10. Hall sensor according to claim 9, it is characterised in that
The size of the filler is more than 5 μm.
11. the Hall sensor according to any one of claims 1 to 3, it is characterised in that
The longitudinal length of the Hall sensor is more than 0.2mm and below 0.6mm, and lateral length is more than 0.4mm and 1.2mm
Hereinafter, thickness is more than 0.1mm and below 0.3mm.
12. the Hall sensor according to any one of claims 1 to 3, it is characterised in that
The rectangular shaped when Hall element is overlooked, longitudinal length is more than 0.1mm and below 0.4mm, and lateral length is
More than 0.1mm and below 0.4mm, thickness are more than 0.05mm and below 0.20mm.
13. the Hall sensor according to any one of claims 1 to 3, it is characterised in that
The Hall element have the GaAs substrate of half insulation, set magnet sensing part on the substrate or in substrate, with
And the multiple electrode portion being connected with the magnet sensing part.
14. the Hall sensor according to any one of claims 1 to 3, it is characterised in that
First face and second face of each outside terminal are formed with nickel plated film.
15. the Hall sensor according to any one of claims 1 to 3, it is characterised in that
From the reference plane to second face of the first position of first outside terminal height for 0.02mm with
Upper and below 0.15mm.
16. the Hall sensor according to any one of claims 1 to 3, it is characterised in that
The multiple wire is by the institute of each electrode portion of the multiple electrode portion and each outside terminal of the multiple outside terminal
Second face for stating first position is electrically connected.
17. the Hall sensor according to any one of claims 1 to 3, it is characterised in that
The multiple wire is by the institute of each electrode portion of the multiple electrode portion and each outside terminal of the multiple outside terminal
Second face for stating second position is electrically connected.
18. the Hall sensor according to any one of claims 1 to 3, it is characterised in that
The not side relative with other outside terminals with the Hall element of each outside terminal is from the containment member
Expose side.
19. a kind of Hall sensor, it is characterised in that possess：
Hall element, it has multiple electrodes portion；
Multiple outside terminals, it is configured around the Hall element；
Multiple wires, the multiple wire is by each outside of each electrode portion of the multiple electrode portion and the multiple outside terminal
Terminal is electrically connected；And
Containment member, its using the Hall element, the multiple wire and each outside terminal as with the wire
The second face sealing in the face of connection,
Wherein, the first face of the side opposite with second face of each outside terminal is revealed from the bottom surface of the containment member
Go out,
Each outside terminal forms following difference in height：From the second position of the multiple wire is connected to than the second position
Closer to the first position of the Hall element, the second of the second position in face on the basis of the bottom surface of the containment member
The height of surface side becomes to be above the height of the second surface side of the first position in face on the basis of the bottom surface of the containment member.
20. Hall sensor according to claim 19, it is characterised in that
The contact that the electrode portion from the bottom surface of the containment member to the Hall element is in contact with the multiple wire
Height of the height of point less than the second surface side of the second position in face on the basis of the bottom surface of the containment member.
21. Hall sensor according to claim 19, it is characterised in that
What the electrode portion from the bottom surface of the containment member to the Hall element was in contact with the multiple wire
The height of contact point is set to T, the height by the second surface side of the second position in face on the basis of the bottom surface of the containment member
When degree is set to p2, p2 is met<T<1.5×p2.
22. the Hall sensor according to any one of claim 19~21, it is characterised in that
The difference in height has inclined plane shape in section view or to the recessed curve shape of the bottom surface side of containment member.
23. the Hall sensor according to any one of claim 19~21, it is characterised in that
Each outside terminal when overlooking the round-shaped, polygonal shape centered on the Hall element or these
The difference in height is formed on the periphery in the region of the combined shaped of shape.
24. the Hall sensor according to any one of claim 19~21, it is characterised in that
The Hall element has substrate, sets magnet sensing part on the substrate or in substrate and connect with the magnet sensing part
The multiple electrode portion connect,
The Hall sensor is also equipped with insulating barrier, the insulating barrier be configured at the Hall element with being configured with the multiple electrode
The face of the opposite side in the face in portion,
The insulating barrier exposes from the bottom surface of the containment member.
25. Hall sensor according to claim 24, it is characterised in that
The specific insulation of the insulating barrier is 108Ω cm~1020Ω·cm。
26. Hall sensor according to claim 24, it is characterised in that
The insulating barrier is used as filler comprising silica.
27. Hall sensor according to claim 26, it is characterised in that
The size of the filler is more than 5 μm.
28. the Hall sensor according to any one of claim 19~21, it is characterised in that
The longitudinal length of the Hall sensor is more than 0.2mm and below 0.6mm, and lateral length is more than 0.4mm and 1.2mm
Hereinafter, thickness is more than 0.1mm and below 0.3mm.
29. the Hall sensor according to any one of claim 19~21, it is characterised in that
The rectangular shaped when Hall element is overlooked, longitudinal length is more than 0.1mm and below 0.4mm, and lateral length is
More than 0.1mm and below 0.4mm, thickness are more than 0.05mm and below 0.20mm.
30. Hall sensor according to claim 24, it is characterised in that
The substrate is the GaAs substrate of half insulation.
31. the Hall sensor according to any one of claim 19~21, it is characterised in that
First face and second face of each outside terminal are formed with nickel plated film.
32. the Hall sensor according to any one of claim 19~21, it is characterised in that
From the reference plane to second face of the first position of the outside terminal height for more than 0.02mm and
Below 0.15mm.
33. the Hall sensor according to any one of claim 19~21, it is characterised in that
The multiple wire is by the institute of each electrode portion of the multiple electrode portion and each outside terminal of the multiple outside terminal
Second face for stating first position is electrically connected.
34. the Hall sensor according to any one of claim 19~21, it is characterised in that
The multiple wire is by the institute of each electrode portion of the multiple electrode portion and each outside terminal of the multiple outside terminal
Second face for stating second position is electrically connected.
35. the Hall sensor according to any one of claim 19~21, it is characterised in that
The not side relative with other outside terminals with the Hall element of each outside terminal is from the containment member
Expose side.
36. a kind of Hall sensor, it is characterised in that possess：
Hall element, it has multiple electrodes portion；
Multiple outside terminals, it is configured around the Hall element；
Multiple wires, the multiple wire is by each outside of each electrode portion of the multiple electrode portion and the multiple outside terminal
Terminal is electrically connected；And
Containment member, its using the Hall element, the multiple wire and each outside terminal as with the wire
The second face sealing in the face of connection,
Wherein, the first face of the side opposite with second face of each outside terminal is revealed from the bottom surface of the containment member
Go out,
The multiple outside terminal comprises at least the first outside terminal,
First outside terminal has first position and relative to second of the first position away from the Hall element
Position,
First outside terminal is formed as：The face on the basis of the bottom surface of the containment member, to first outside terminal
The height in second face of the first position is less than described second to the second position of first outside terminal
The height in face.
37. Hall sensor according to claim 36, it is characterised in that
The Hall element configuration is in following position：The face on the basis of the bottom surface of the containment member, makes the Hall element
Peak is higher than second face of the first position of first outside terminal and than the institute of first outside terminal
Second face for stating second position is low.
38. Hall sensor according to claim 36, it is characterised in that
The height from the reference plane to the peak of the Hall element is set into T, will be from the reference plane to described
When the height in second face at two positions is set to p2, the Hall element, which is configured in, makes p2<T<The position that 1.5 × p2 is set up
Put.
39. the Hall sensor according to any one of claim 36~38, it is characterised in that
The multiple outside terminal also includes the second outside terminal, the 3rd outside terminal and the 4th outside terminal,
First outside terminal to the 4th outside terminal is configured to outside first outside terminal and the described 3rd
The virtual line that terminal links is overlooked with the virtual line for linking second outside terminal and the 4th outside terminal
When intersect,
Hall element rectangular shaped when overlooking, is configured in following position：The four of the Hall element when overlooking
Region, second outside terminal and institute of the individual apex configuration between first outside terminal and second outside terminal
State region between region, the 3rd outside terminal and the 4th outside terminal between the 3rd outside terminal and described
Region between 4th outside terminal and first outside terminal.
40. the Hall sensor according to any one of claim 36~38, it is characterised in that
Insulating barrier is also equipped with, the face with being configured with the multiple electrode portion that the insulating barrier is configured at the Hall element is opposite
The face of side, the insulating barrier exposes from the bottom surface of the containment member.
41. the Hall sensor according to any one of claim 36~38, it is characterised in that
Each outside terminal of the multiple outside terminal has difference in height on second face,
Each outside terminal has described first using the difference in height as boundary away from the near side of the Hall element
Position, has the second position in the side remote away from the Hall element,
Each outside terminal is formed as：The face on the basis of the bottom surface of the containment member, described in each outside terminal
The height in second face of first position is less than the height to second face of the second position of each outside terminal
Degree.
42. Hall sensor according to claim 41, it is characterised in that
Each outside terminal when overlooking the round-shaped, polygonal shape centered on the Hall element or these
The difference in height is formed on the periphery in the region of the combined shaped of shape.
43. Hall sensor according to claim 40, it is characterised in that
The specific insulation of the insulating barrier is 108Ω cm~1020Ω·cm。
44. Hall sensor according to claim 40, it is characterised in that
The insulating barrier is used as filler comprising silica.
45. Hall sensor according to claim 44, it is characterised in that
The size of the filler is more than 5 μm.
46. the Hall sensor according to any one of claim 36~38, it is characterised in that
The longitudinal length of the Hall sensor is more than 0.2mm and below 0.6mm, and lateral length is more than 0.4mm and 1.2mm
Hereinafter, thickness is more than 0.1mm and below 0.3mm.
47. the Hall sensor according to any one of claim 36~38, it is characterised in that
The rectangular shaped when Hall element is overlooked, longitudinal length is more than 0.1mm and below 0.4mm, and lateral length is
More than 0.1mm and below 0.4mm, thickness are more than 0.05mm and below 0.20mm.
48. the Hall sensor according to any one of claim 36~38, it is characterised in that
The Hall element have the GaAs substrate of half insulation, set magnet sensing part on the substrate or in substrate, with
And the multiple electrode portion being connected with the magnet sensing part.
49. the Hall sensor according to any one of claim 36~38, it is characterised in that
First face and second face of each outside terminal are formed with nickel plated film.
50. the Hall sensor according to any one of claim 36~38, it is characterised in that
From the reference plane to second face of the first position of first outside terminal height for 0.02mm with
Upper and below 0.15mm.
51. the Hall sensor according to any one of claim 36~38, it is characterised in that
The multiple wire is by the institute of each electrode portion of the multiple electrode portion and each outside terminal of the multiple outside terminal
Second face for stating first position is electrically connected.
52. the Hall sensor according to any one of claim 36~38, it is characterised in that
The multiple wire is by the institute of each electrode portion of the multiple electrode portion and each outside terminal of the multiple outside terminal
Second face for stating second position is electrically connected.
53. the Hall sensor according to any one of claim 36~38, it is characterised in that
The not side relative with other outside terminals with the Hall element of each outside terminal is from the containment member
Expose side.
54. a kind of camera lens module, it is characterised in that possess：
Hall sensor according to any one of Claims 1 to 53；
Lens holders, it is provided with magnet；And
Driving coil, it moves the magnet based on the output signal of the outside terminal output from the Hall sensor
It is dynamic.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-204716 | 2014-10-03 | ||
| JP2014204716 | 2014-10-03 | ||
| PCT/JP2015/004807 WO2016051726A1 (en) | 2014-10-03 | 2015-09-18 | Hall sensor manufacturing method, hall sensor, and lens module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206558553U true CN206558553U (en) | 2017-10-13 |
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| CN201590001011.XU Active CN206558553U (en) | 2014-10-03 | 2015-09-18 | Hall sensor and camera lens module |
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| Country | Link |
|---|---|
| JP (1) | JP6085726B2 (en) |
| KR (1) | KR101868760B1 (en) |
| CN (1) | CN206558553U (en) |
| TW (1) | TWI555995B (en) |
| WO (1) | WO2016051726A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2003002332A1 (en) * | 2001-06-28 | 2003-01-09 | Akio Kakehi | Data re-embodying system, its method, and measuring device |
| US10128434B2 (en) * | 2016-12-09 | 2018-11-13 | Rohm Co., Ltd. | Hall element module |
| JP7009157B2 (en) * | 2016-12-28 | 2022-01-25 | ローム株式会社 | Semiconductor device |
| CN107966669B (en) * | 2017-12-19 | 2019-11-08 | 大连理工大学 | Semiconductor three-dimensional Hall sensor and preparation method thereof suitable for high-temperature work environment |
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| JP2001053372A (en) * | 1999-08-05 | 2001-02-23 | Mitsumi Electric Co Ltd | Laser module |
| CN1369905A (en) * | 2001-02-16 | 2002-09-18 | 安普生科技股份有限公司 | Package method for high-correctness high-sensitivity Hall sensor and IC |
| JP2003218145A (en) * | 2002-01-18 | 2003-07-31 | Sony Corp | Method of manufacturing resin-sealed semiconductor device |
| JP2005158778A (en) * | 2003-11-20 | 2005-06-16 | New Japan Radio Co Ltd | Manufacturing method for lead frame and for semiconductor device |
| JP4786986B2 (en) * | 2005-09-29 | 2011-10-05 | 旭化成エレクトロニクス株式会社 | Electronic components |
| JP2007294568A (en) * | 2006-04-24 | 2007-11-08 | Denso Corp | Semiconductor device |
| JP5572622B2 (en) * | 2009-05-15 | 2014-08-13 | ローム株式会社 | Semiconductor device |
| JP2010283252A (en) * | 2009-06-08 | 2010-12-16 | Denso Corp | Semiconductor device and method of manufacturing the same |
| DE102011077580A1 (en) * | 2011-06-16 | 2012-12-20 | Robert Bosch Gmbh | Hall sensor and method for operating a Hall sensor |
| US20140091465A1 (en) * | 2012-09-28 | 2014-04-03 | Texas Instruments Incorporated | Leadframe having sloped metal terminals for wirebonding |
| WO2014091714A1 (en) | 2012-12-14 | 2014-06-19 | 旭化成エレクトロニクス株式会社 | Magnetic sensor and magnetic sensor device, and magnetic sensor manufacturing method |
| TWI493762B (en) * | 2013-01-30 | 2015-07-21 | Univ Nat Taipei Technology | Two - dimensional folded Hall - sensing element |
| JP2014178452A (en) * | 2013-03-14 | 2014-09-25 | Asahi Kasei Electronics Co Ltd | Position detecting device |
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2015
- 2015-09-18 CN CN201590001011.XU patent/CN206558553U/en active Active
- 2015-09-18 TW TW104131016A patent/TWI555995B/en active
- 2015-09-18 WO PCT/JP2015/004807 patent/WO2016051726A1/en active Application Filing
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| JP6085726B2 (en) | 2017-02-22 |
| KR101868760B1 (en) | 2018-06-18 |
| KR20170028378A (en) | 2017-03-13 |
| JPWO2016051726A1 (en) | 2017-04-27 |
| TW201617637A (en) | 2016-05-16 |
| WO2016051726A1 (en) | 2016-04-07 |
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