CN206542385U - FBAR and communication device with supporting construction - Google Patents
FBAR and communication device with supporting construction Download PDFInfo
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- CN206542385U CN206542385U CN201621463325.4U CN201621463325U CN206542385U CN 206542385 U CN206542385 U CN 206542385U CN 201621463325 U CN201621463325 U CN 201621463325U CN 206542385 U CN206542385 U CN 206542385U
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- 238000010276 construction Methods 0.000 title claims abstract description 28
- 238000004891 communication Methods 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000010409 thin film Substances 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- 239000012212 insulator Substances 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 239000012528 membrane Substances 0.000 claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052741 iridium Inorganic materials 0.000 claims description 7
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 229910052707 ruthenium Inorganic materials 0.000 claims description 7
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- UPIXZLGONUBZLK-UHFFFAOYSA-N platinum Chemical compound [Pt].[Pt] UPIXZLGONUBZLK-UHFFFAOYSA-N 0.000 claims description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- 229910003327 LiNbO3 Inorganic materials 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 2
- 238000009413 insulation Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 29
- 239000000758 substrate Substances 0.000 abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- 230000008569 process Effects 0.000 abstract description 12
- 238000013461 design Methods 0.000 abstract description 6
- 239000000377 silicon dioxide Substances 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
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- 230000002401 inhibitory effect Effects 0.000 abstract description 3
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- 239000010408 film Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The utility model proposes a kind of FBAR (FBAR) and communication device with supporting construction.The acoustic resonator includes silicon substrate, silica membrane, piezoelectric thin film transducer stacked structure, and piezoelectric thin film transducer stacked structure includes top electrode, piezoelectric layer, hearth electrode successively from top to bottom；Cavity and cavity inner supporting structure are formed with insulator silicon chip, insulator silicon chip passes through metal bonding layer and piezoelectric thin film transducer stacked structure formation closed cavity；Prefabricated cavity width is more than the horizontal width of piezoelectric thin film transducer stacked structure on insulator silicon chip, and the design can have good inhibiting effect to the transverse noise of FBAR, so as to improve device performance.In addition, the utility model forms the supporting construction of piezoelectric thin film transducer stacked structure in cavity, fracture, the damage of the early bonding process of FBAR are advantageously reduced, device production stability can be effectively improved, be adapted to batch production.
Description
Technical field
The utility model is related to a kind of wireless communication RF front-end devices, particular with the film bulk acoustic of supporting construction
Resonator (FBAR) and its communication device.
Background technology
Since 21st century, the Rapid Expansion in consumer electronics product and person communication system market is caused
To the very big demand of wireless communication system (such as palm PC, mobile phone, navigation system, satellite communication and various data communication).
Since particularly nearly 2 years, with the issue of the third generation and forth generation communication standard, the developing trend of individual radio communication system
It is integrated into by increasing functional module in wireless terminal.Present mobile phone not only needs basic call and short message work(
Can, in addition it is also necessary to have the functions such as GPS navigation, web page browsing, video/audio broadcasting, photograph and live tv reception.Further, since going through
The reason such as history and area causes the presence of various wireless communication standards so that need integrated a variety of moulds in the mobile phone for using new standard
Formula, multiple frequency ranges realize the trans-regional roaming between country to facilitate.More than it is a variety of so that the development of radio communication is towards increasing
Plus functional module, reduction system size, reduce cost and the direction of power consumption is developed.Therefore, prepare high-performance, small size, it is low into
Originally the radio system with low-power consumption just turns into a focus of research.
In the past few years, developing rapidly with RF IC (RFIC) technology, some are previously used for communication
Discrete component in system, such as low-noise amplifier (LNA) and intermediate-frequency filter (IF), it is already possible to integrated using radio frequency
The mode of circuit is realized；But the radio-frequency oscillator of other components, such as Low phase noise (RF Oscillator) and radio-frequency front-end
Wave filter (RF Filter) etc., is but still difficult to realize by the way of RF IC.On the other hand, with MEMS skills
The development of art, some use RF Components prepared by MEMS technology, such as RF switch (RF Switch), radio frequency inductive (RF
Inductor) and rf-resonator (RF Resonator) etc., obtained due to the premium properties that it has extensive research and
Using.FBAR (Film Bulk Acoustic Resonator, FBAR) is that research recent years is awfully hot
A kind of use MEMS technology realize rf-resonator.It is produced on silicon or GaAs substrate, mainly by metal electrode/
A kind of device that piezoelectric membrane/metal electrode is constituted.Under some specific frequencies, FBAR devices are shown as quartz crystal is humorous
The same resonance characteristic of the device that shakes, therefore oscillator or wave filter can be built into applied in modern communication systems.Relative to biography
System is used for constituting LC oscillators, ceramic dielectric resonator and surface acoustic wave (SAW) device of bandpass filter and microwave generating source
For, FBAR device is except with small size, low-power consumption, low insertion loss and senior engineer's working frequency
Outside the advantage of (0.5GHz-10GHz), it is often more important that its preparation technology can be compatible with CMOS technology, thus can with it is outer
Enclose circuit and constitute system-on-a-chip, greatly reduce the size and power consumption of system.
Radio-frequency oscillator based on FBAR devices mainly has low power consumption and small volume and can be compatible with standard CMOS process
Feature, the Single-Chip Integration of feasible system.It is this kind of with the improvement to FBAR device frequency temperature coefficient
Oscillator has very big ample scope for abilities in the RF system for need low power consumption and small volume.
The preparation technology of FBAR device is for other MEMSs and uncomplicated, prepares at present
FBAR is mainly completed by sacrificial layer surface technique or back etch process.Sacrificial layer surface technique is main
By the use of the material such as phosphosilicate glass or silica as filling sacrifice layer, piezoelectric thin film transducer stacked structure is deposited on it
Surface.The later stage of technique removes sacrifice layer to reach the purpose to form cavity.The problem of sacrificial layer surface technique is main
It is that sacrifice layer can not be removed thoroughly, a certain degree of adhesion can be caused, so as to influences the performance of device.And back etch process master
If by carrying out body silicon etching in wafer rear, so that at the back side for the piezoelectric thin film transducer stacked structure that front is formed
In cavity environment.The subject matter of back-etching technique is to need layer of silicon dioxide plus one layer of silicon nitride film thin as piezoelectricity
The supporting layer of film transducer stacked structure so that device avoids etching the erosion of industry in technique productions.But such design
It is easy to produce larger stress, fold and rupture, the performance of meeting extreme influence device easily occurs in device.Remaining answer is not solved
The problem of power, it can not just prepare high performance FBAR devices.
Utility model content
In order to overcome the technical problem of existing FBAR, insulator silicon of the utility model based on perforated cavities
The FBAR (FBAR) of substrate, builds conjunction layer by metal and cavity inner supporting structure avoids above-mentioned technology and asked
Topic.
A kind of FBAR with supporting construction, it is characterised in that：
The resonator includes insulator silicon chip and piezoelectric thin film transducer stacked structure with cavity；The piezoelectricity is thin
Film transducer stacked structure includes top electrode, piezoelectric and hearth electrode, wherein top electrode, piezoelectric, hearth electrode heap successively
Folded, the piezoelectric thin film transducer stacked structure is placed in the cavity of the insulator silicon chip, the piezoelectric thin film transducer
Pass through bonded layer formation closed cavity structure with insulator silicon chip；Include multiple supporting constructions in the cavity, for supporting
Piezoelectric thin film transducer stacked structure.
Further, the top electrode, the hearth electrode extension it is in the same plane.
Further, the top electrode, the hearth electrode include one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium or
Combination.
Further, the piezoelectric includes aluminium nitride (AlN), zinc oxide (ZnO), lithium niobate (LiNbO3), tantalic acid
One of lithium (LiTaO3) or combination.
Further, the bonded layer includes metal bonding layer.
Further, the transverse width of the cavity is more than the transverse width of piezoelectric thin film transducer stacked structure.
Further, the thickness of the top electrode and the hearth electrode is between 100-2000 nanometers.
The utility model also proposes a kind of communication device, including the film with supporting construction that the utility model is proposed
Bulk acoustic wave resonator.
The utility model proposes the thin-film body of new CMOS complementary metal-oxide-semiconductor (CMOS) process compatible
Acoustic resonator (FBAR), it, which is designed, solves the reality that long-standing problem the cavity design of FBAR (FBAR) field
Existing problem.By bonded layer, the adhesion of surface sacrificial process and the stress problem of back-etching technique can be effectively avoided.
The utility model uses default cavity structure, advantageously reduce the adhesion that is formed in traditional cavity etching process and
Mechanical structure fracture, damage, can effectively improve device production yield, be adapted to batch production.Because prefabricated cavity width is big
In the horizontal width of piezoelectric thin film transducer stacked structure, the design can also have very to the transverse noise of FBAR
Good inhibitory action, so as to improve device performance.The utility model forms piezoelectric thin film transducer stacked structure in cavity
Supporting construction, advantageously reduces fracture, damage of the FBAR in bonding process, can effectively improve device production
Stability, is adapted to batch production.
Brief description of the drawings
Fig. 1 is the structural representation of the FBAR (FBAR) of the utility model wherein embodiment；
Fig. 2 is the piezoelectric thin film transducer stacked structure schematic diagram of the utility model wherein embodiment；
Fig. 3 is the schematic diagram of the insulator silicon chip with cavity and supporting construction of the utility model wherein embodiment；
Fig. 4 is the piezoelectric thin film transducer stacked structure of the utility model wherein embodiment and the insulator silicon with cavity
The schematic diagram of substrate bonding；
Fig. 5 is the schematic diagram of the bonding back substrate stripping of the utility model wherein embodiment；
Embodiment
Embodiment 1
The utility model proposes a kind of FBAR (FBAR).As Figure 1-5, it includes：Band cavity
Insulating substrate 1, the insulating substrate is, for example, SOI Substrate；The piezoelectric thin film transducer stacked structure 2 being placed in cavity, the heap
Stack structure 2 stacks gradually top electrode 21, piezoelectric material layer 22, hearth electrode 23 from top to bottom.Also include supporting construction 3 in cavity,
Wherein top electrode 21, hearth electrode 23 are bonded with insulating substrate and supporting construction 3, are formed closed cavity, are realized thin-film body
Acoustic resonator (FBAR) is filtered.Finally, top electrode 21, hearth electrode 23 are in same level, are easy to connecting lead wire to test.
In the present embodiment, the material of top electrode 21 can be one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium or group
Close；The material of hearth electrode 23 can be one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium or combination.
Wherein, piezoelectric includes aluminium nitride (AlN), zinc oxide (ZnO), lithium niobate (LiNbO3), lithium tantalate
(LiTaO3) one of or combination.
Cavity inner supporting structure 3 is a part for insulating substrate, etched to form.The utility model forms pressure in cavity
The supporting construction of conductive film transducer stacked structure, advantageously reduce FBAR bonding process fracture, damage
Wound, can effectively improve device production stability, be adapted to batch production.
Include one layer of cushion 24,50-500 nanometers of thickness on transfer base substrate 25.It will be understood by those skilled in the art that
Substrate in the present embodiment it is common for silicon substrate, can also be glass substrate, organic material substrate, quartz substrate or its
It all be applied to prepare the carrier substrates material of FBAR (FBAR).Cushion 24 in the present embodiment is used
In later separation transfer base substrate and FBAR (FBAR), the material of the cushion can be silica, nitridation
Silicon, silicon oxynitride, the material such as phosphoric acid glass.According to actual process, can in silica membrane Doped ions, such as phosphorus,
Fluorine, carbon, boron etc., preferably to etch.
Hearth electrode 23, is formed and graphical by Conventional deposition processes, can be applied to the hearth electrode material of the present embodiment
Can be one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium or combination, the thickness of hearth electrode 23 is between 100-2000 nanometers.
Piezoelectric membrane 22, is formed by the piezoelectric membrane for depositing high C axis oriented, skilled person will appreciate that, it can wrap
Include the methods such as physical vapour deposition (PVD), chemical vapor deposition, reactive radio frequency magnetron sputtering, ald.Wherein, piezoelectric membrane material
Material can be aluminium nitride (AlN), zinc oxide (ZnO), lithium nickelate (LiNbO3), lithium tantalate (LiTaO3) one of or combination.
Piezoelectric membrane it is graphical, reactive ion etching or wet-etching technology can be used to etch pressure in the present embodiment
Conductive film, forms the through hole for drawing hearth electrode.
Top electrode 21, is formed, and be lithographically formed required figure by depositing.Top electrode material can be white for tungsten, molybdenum, platinum
One of gold, ruthenium, iridium, titanium tungsten, aluminium or combination, thickness are 100-2000 nanometers.
Insulator silicon chip with cavity；The cavity of the insulator silicon chip can be formed by dry etching, cavity
Size should match with piezoelectric thin film transducer stacked structure.It is preferred that, in the utility model, the width of cavity is more than piezoelectricity
The horizontal width of transducer stacked structure, to improve the inhibitory action to the transverse noise of FBAR, so as to carry
High device performance.
Also include the supporting construction 3 for being used to support piezoelectric thin film transducer stacked structure in the utility model, in cavity,
The height of supporting layer in cavity should be matched with the vertical height effect of piezoelectric thin film transducer stacked structure, so as to bonding when
Time can form effectively contact, so as to play the purpose of support.
The forming method of cavity structure with supporting construction comprises the following steps：
Prepare insulator silicon chip, and its surface clean is clean.The insulator silicon chip is silicon, two respectively from top to bottom
Silica (BOX), silicon substrate.
Using dry method or wet etching insulator silicon chip, the silicon part on the upper strata in etching window is removed, etching
Depth should be consistent with the integral thickness of piezoelectric thin film transducer stacked structure, so as to which supporting role can be formed after being bonded.
After etching, the transverse width of cavity is more than the transverse width of piezoelectric thin film transducer stacked structure.
Use the silicon in dry method or wet etching cavity.According to the figure pre-set, after etching, it will be formed in cavity
Many supporting constructions.The quantity of supporting construction can be from 1 to 10 according to the different requirements of size of devices.
Cleaning wafer surface, makes not staying residual thing in cavity.
Insulator silicon chip with cavity is bonded with piezoelectric thin film transducer stacked structure, one is made
Entirety simultaneously forms closed cavity.
The wet method of cushion 24 is removed, so that the carrier substrates of FBAR be peeled off from device, formed
Whole FBAR (FBAR) structure.Top electrode 21, hearth electrode 23 are final on the insulator silicon chip with cavity
In same level, connecting lead wire is facilitated to test.
The present embodiment further relates to being bonded for the insulator silicon chip with cavity and piezoelectric thin film transducer stacked structure, its key
Close technique as follows：
First in the insulator silicon substrate surface deposition layer of metal material 14 with cavity, metal material 14 can be
One of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium or combination, thickness are 100-2000 nanometers；Carved using dry method or wet method
Etching technique removes the metal level in cavity, retains the metal level outside cavity and in supporting construction；By the insulator with cavity
The metal level 14 of silicon chip aligns with the top electrode 21 of piezoelectric thin film transducer stacked structure, the metal of hearth electrode 23, passes through metal
Both are bonded as a device by bonding technology.
In other embodiment, metal material 14 can also be previously deposited on insulator silicon chip, is then opened again
The etch step of cavity structure of the beginning with supporting construction.
The FBAR that the utility model is proposed is widely used in communication device, for example：Strength
Device, wave filter and duplexer.
The utility model is the film bulk acoustic of new CMOS complementary metal-oxide-semiconductor (CMOS) process compatible
Resonator (FBAR), its design solve that long-standing problem the design of FBAR (FBAR) field cavity realize work
Skill problem., can be in existing wafer formation condition using the technique compatible with CMOS complementary metal-oxide-semiconductor (CMOS)
It is lower to be produced in batches, with bonding Rotating fields, it can effectively avoid adhesion and the back-etching work of surface sacrificial process
The stress problem of skill.
Although the utility model is described in detail above, the utility model not limited to this, the art
Technical staff can carry out various modifications according to principle of the present utility model.Therefore, it is all to be made according to the utility model principle
Modification, all should be understood to fall into protection domain of the present utility model.
Claims (8)
1. a kind of FBAR with supporting construction, it is characterised in that：
The resonator includes insulator silicon chip and piezoelectric thin film transducer stacked structure with cavity；The piezoelectric membrane is changed
Energy device stacked structure includes top electrode, piezoelectric and hearth electrode, and wherein top electrode, piezoelectric, hearth electrode is stacked gradually, institute
State piezoelectric thin film transducer stacked structure to be placed in the cavity of the insulator silicon chip, the piezoelectric thin film transducer and insulation
Body silicon chip passes through bonded layer formation closed cavity structure；Include multiple supporting constructions in the cavity, for supporting piezoelectricity thin
Film transducer stacked structure.
2. the FBAR according to claim 1 with supporting construction, it is characterised in that：The top electricity
Pole, the hearth electrode extension it is in the same plane.
3. the FBAR according to claim 1 with supporting construction, it is characterised in that：The top electricity
Pole, the hearth electrode include one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium or combination.
4. the FBAR according to claim 1 with supporting construction, it is characterised in that：The piezoresistive material
Material includes aluminium nitride (AlN), zinc oxide (ZnO), lithium niobate (LiNbO3), lithium tantalate (LiTaO3) one of or combination.
5. the FBAR according to claim 1 with supporting construction, it is characterised in that：The bonded layer
Including metal bonding layer.
6. the FBAR according to claim 5 with supporting construction, it is characterised in that：The cavity
Transverse width is more than the transverse width of piezoelectric thin film transducer stacked structure.
7. the FBAR according to claim 1 with supporting construction, it is characterised in that：The top electrode
Thickness with the hearth electrode is between 100-2000 nanometers.
8. a kind of communication device, including the FBAR with supporting construction described in claim any one of 1-7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621463325.4U CN206542385U (en) | 2016-12-29 | 2016-12-29 | FBAR and communication device with supporting construction |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621463325.4U CN206542385U (en) | 2016-12-29 | 2016-12-29 | FBAR and communication device with supporting construction |
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| CN206542385U true CN206542385U (en) | 2017-10-03 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111342799A (en) * | 2018-12-18 | 2020-06-26 | 天津大学 | Bulk acoustic wave resonator, filter, and electronic device having enlarged release channel |
| CN112452695A (en) * | 2020-10-29 | 2021-03-09 | 北京京东方技术开发有限公司 | Acoustic wave transduction structure and preparation method thereof and acoustic wave transducer |
| WO2022183491A1 (en) * | 2021-03-05 | 2022-09-09 | 天津大学 | Quartz crystal resonator and processing method therefor, and electronic device |
-
2016
- 2016-12-29 CN CN201621463325.4U patent/CN206542385U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111342799A (en) * | 2018-12-18 | 2020-06-26 | 天津大学 | Bulk acoustic wave resonator, filter, and electronic device having enlarged release channel |
| CN111342799B (en) * | 2018-12-18 | 2023-12-15 | 天津大学 | Bulk acoustic resonator with enlarged release channel, filter, electronic device |
| CN112452695A (en) * | 2020-10-29 | 2021-03-09 | 北京京东方技术开发有限公司 | Acoustic wave transduction structure and preparation method thereof and acoustic wave transducer |
| WO2022183491A1 (en) * | 2021-03-05 | 2022-09-09 | 天津大学 | Quartz crystal resonator and processing method therefor, and electronic device |
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