CN109150127A - Thin film bulk acoustic wave resonator and preparation method thereof, filter - Google Patents
Thin film bulk acoustic wave resonator and preparation method thereof, filter Download PDFInfo
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- CN109150127A CN109150127A CN201810842153.9A CN201810842153A CN109150127A CN 109150127 A CN109150127 A CN 109150127A CN 201810842153 A CN201810842153 A CN 201810842153A CN 109150127 A CN109150127 A CN 109150127A
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/547—Notch filters, e.g. notch BAW or thin film resonator filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Present disclose provides a kind of thin film bulk acoustic wave resonator and preparation method thereof, filter；Wherein, which includes: the first substrate and the piezo-electric stack structure that is formed on first substrate, which has one first contact hole and one second contact hole；And second substrate, there is one first protrusion and one second protrusion；Wherein, the first protrusion and the second protrusion of second substrate are bonded with the first contact hole of the piezo-electric stack structure and the second contact hole respectively, and form the first air chamber between second substrate and piezo-electric stack structure.Disclosure thin film bulk acoustic wave resonator and preparation method thereof, filter avoid complicated CMP process, avoid expendable material release tech, reduce element manufacturing difficulty and production cost, improve the reliability of bulk acoustic wave resonator.
Description
Technical field
The disclosure belongs to wireless communication technique field, relates more specifically to a kind of thin film bulk acoustic wave resonator and its production side
Method, filter.
Background technique
With the development of wireless communication technique, requirement of the people for data transmission bauds is also higher and higher, frequency spectrum resource
It is more and more crowded.In order to meet the needs of people are to data transfer rate, it is necessary to make full use of frequency spectrum, therefore a mobile phone allows for covering
Very wide frequency range is covered, the equipment of different people can be assigned to enough spectral bands in the case where crowded in this way
It is wide.Meanwhile carrier aggregation technology is also used since 4G, an equipment is passed using different carrier spectrums simultaneously
Transmission of data.On the other hand, in order to support enough data transmission rates, communication protocol to become more and more multiple in limited bandwidth
It is miscellaneous, therefore stringent demand also proposed for the various performances of radio frequency system.
Radio-frequency filter by the interference outside communication spectrum and can make an uproar as the important component in RF front-end module
Sound is filtered out to meet the needs of radio frequency system and communications protocol are for signal-to-noise ratio.With the complexity of communication protocol, to filter
Performance requirement is higher and higher, filter design more come it is more challenging.In addition, the number of frequency bands needed support with mobile phone is not
It is disconnected to rise, since each frequency band requires the filter of oneself, the filter quantity for needing to use in Mobile phone
Also constantly rising.The filter quantity that needs in usual existing a 4G cell phone are used is up to more than 30.
Currently, radio-frequency filter most mainstream is achieved in that surface acoustic wave (SAW:Surface Acoustic Wave)
Device and bulk acoustic wave (BAW:Bulk Acoustic Wave) device.
SAW since its structure is simple, low manufacture cost and be widely used.But because of its working frequency and electrode wires
Width is inversely proportional, and when working frequency is more than 2GHz, electrode line width will be less than 0.5um, this will lead to SAW device quality factor
Decline with power bearing ability, therefore, SAW device is not suitable for frequency applications.
BAW filter is different from SAW filter, the sound wave vertical transmission in BAW filter, the thickness of frequency and film
It is inversely proportional, theoretically can satisfy the communication need within 20GHz.Therefore, with universal and 5G the trial operation of 4G, BAW
The application of filter will be more and more extensive.
Bulk acoustic wave resonator is the basic module for forming bulk accoustic wave filter, by by different bulk acoustic wave resonator grades
Connection, so that it may the bulk accoustic wave filter of different performance is fabricated to, to meet the different market demands.
Qorvo u s company makes Bragg reflecting layer using plural layers, and body sound is made above Bragg reflecting layer
Wave resonator.Acoustic wave energy is limited in the device structure by Bragg reflecting layer.On the one hand this method needs to increase multilayer
Thin-film technique, process complexity is high, and design difficulty is big, on the other hand has a small amount of acoustic wave energy and is leaked into substrate, thus shadow
The quality factor q of Chinese percussion instrument part.
US7802349B2 United States Patent (USP) proposes a kind of humorous using expendable material formation cavity production air-gap type bulk acoustic wave
The method of vibration device.This method needs to introduce chemically mechanical polishing (CMP:Chemical Mechanical Polish) technology and sacrificial
Domestic animal layer release tech, process complexity is high, and the selection of material has limitation, and will affect the reliability of device.
CN104767500A Chinese invention patent, which proposes a kind of use and prepares substrate, forms cavity production air-gap type body
The method of acoustic resonator.This method is needed using interim bonding technology, has limitation, manufacture craft to substrate material selection
Complexity, and may be damaged device architecture in film transfer process, to influence yield.
Generally speaking, the prior art is primarily present following technological deficiency:
(1) in the production process, it needs using CMP technique, complex process, equipment are expensive, cost of manufacture is high.
(2) expendable material release process requires material used in substrate and device must be insoluble in release chemical liquid.
(3) expendable material release process will lead to device and be exposed in chemical liquid for a long time, influence device reliability.
(4) make that Bragg reflecting layer complex process, at high cost, design difficulty is big, and have sound wave leakage, device quality because
Number can not further increase.
Summary of the invention
(1) technical problems to be solved
Based on problem above, the purpose of the disclosure is to propose a kind of thin film bulk acoustic wave resonator and preparation method thereof, filter
Wave device, for solving at least one of above technical problem.
(2) technical solution
In order to achieve the above object, as an aspect of this disclosure, a kind of thin film bulk acoustic wave resonator is provided, is wrapped
It includes:
First substrate and the piezo-electric stack structure being formed on first substrate, the piezo-electric stack structure have one first to connect
Contact hole and one second contact hole；And
Second substrate has one first protrusion and one second protrusion；
Wherein, the first protrusion and the second protrusion of second substrate are contacted with the first of the piezo-electric stack structure respectively
Hole and the bonding of the second contact hole, and the first air chamber is formed between second substrate and piezo-electric stack structure.
In some embodiments, first protrusion is corresponding with first contact hole, and the second protrusion connects with described second
Contact hole is corresponding, and the height of first protrusion and the second protrusion is respectively greater than the depth of first contact hole and the second contact hole
Degree.
In some embodiments, it is formed with the second air chamber on first substrate, second air chamber and the first sky
Air cavity position is opposite；
It is respectively formed with third contact hole, the 4th contact hole in second air chamber two sides, the third contact hole and institute
It is opposite to state the first contact hole site, the 4th contact hole is opposite with the second contact hole site；
It is formed with the first pad at the third contact hole, is formed with the second pad at the 4th contact hole.
In some embodiments, the piezo-electric stack structure include: first electrode, the piezoelectricity that is formed in the first electrode
Layer and the second electrode being formed on the piezoelectric layer；
First protrusion is bonded with first contact hole, first through first contact hole and the second electrode
Surface contact, second protrusion is bonded with second contact hole, and the through second contact hole and the first electrode
The contact of one surface；
First pad is contacted through the third contact hole with the second surface of the second electrode, second pad
It is contacted through the 4th contact hole with the second surface of the first electrode；
The first surface of the first electrode and the second surface of the first electrode are opposite, the second electrode
The first surface and the second surface of the second electrode are opposite；
Second air chamber is located on first substrate, is electric with first electrode in the piezo-electric stack structure and second
Pole overlapping region is opposite, and the second air cavity area is greater than or equal to the area of the overlapping region.
In some embodiments, first substrate, the second substrate material be silicon, SOI, glass, sapphire, carbonization
Silicon, GaAs, GaN, LiNbO3Or LiTaO3；
The thin film bulk acoustic wave resonator further includes separation layer on the first substrate, and the material of the separation layer is SiO2、
Si3N4, one of silicon oxynitride or AlN or multiple combinations；
The first electrode, the material of second electrode are one of Mo, W, Al, Cu, Ir, Ru, Si or multiple combinations；
The material of the piezoelectric membrane is quartz, AlN, ZnO, PZT, LiNbO3、LiTaO3And combinations thereof, or be doping
There are quartz, AlN, ZnO, PZT, LiNbO of rare earth element3、LiTaO3And combinations thereof；
The thin film bulk acoustic wave resonator further includes passivation layer on the second electrode, and the material of the passivation layer is SiO2、
Si3N4, silicon oxynitride, AlN or Al2O3。
A kind of production method of thin film bulk acoustic wave resonator another aspect of the present disclosure provides, comprising:
The piezo-electric stack structure with one first contact hole and one second contact hole is formed on the first substrate；
One first protrusion and one second protrusion are formed on the second substrate；And
By the first protrusion of second substrate and the second protrusion the first contact hole with the piezo-electric stack structure respectively
It is aligned and is bonded with the second contact hole, and form the first air chamber between second substrate and piezo-electric stack structure.
In some embodiments, first protrusion is corresponding with first contact hole, and the second protrusion connects with described second
Contact hole is corresponding, and the height of first protrusion and the second protrusion is respectively greater than the depth of first contact hole and the second contact hole
Degree.
In some embodiments, the production method of the thin film bulk acoustic wave resonator further include:
The second air chamber is formed on first substrate, second air chamber is opposite with the first air chamber position；
Be respectively formed third contact hole, the 4th contact hole in second air chamber two sides, the third contact hole with it is described
First contact hole site is opposite, and the 4th contact hole is opposite with the second contact hole site；
The first pad is formed at the third contact hole, and the second pad is formed at the 4th contact hole.
In some embodiments, the piezoelectric pile with one first contact hole and one second contact hole is formed on the first substrate
The step of stack structure includes:
First substrate is provided；
Separation layer is formed on first substrate；
First electrode is formed on the separation layer；
Piezoelectric layer is formed on the first electrode, is etched the piezoelectric layer and is formed first contact hole and the second contact
Hole；
Second electrode is formed on the piezoelectric layer, etches the second electrode with exposure second contact hole；And
Passivation layer is formed in the second electrode, is etched the passivation layer and is connect with exposure first contact hole and second
Contact hole；
Include: in the step of forming one first protrusion and second protrusion on the second substrate
One second substrate is provided, and
It etches second substrate and forms first protrusion and the second protrusion.
A kind of filter another aspect of the present disclosure provides comprising cascade multiple thin-film body sound
Wave resonator.
(3) beneficial effect
(1) disclosure thin film bulk acoustic wave resonator and preparation method thereof, filter avoid complicated CMP process, reduce
Element manufacturing difficulty.
(2) expendable material release process is avoided, keeps the making material range of choice of bulk acoustic wave resonator wider, reduces
Production cost.
(3) it avoids device to be exposed in chemical liquid for a long time, improves the reliability of bulk acoustic wave resonator, subtract simultaneously
Harm of the chemical liquid to environment is lacked.
(4) overlapping region (bulk acoustic resonance between the bulk acoustic wave resonator first electrode, piezoelectric layer and second electrode
The effective district of device work) it can be entirely located within air chamber, not with any substrate contact, reduce the leakage of acoustic wave energy,
Improve the quality factor of bulk acoustic wave resonator.
Detailed description of the invention
Fig. 1 is disclosure film bulk acoustic resonator structure schematic diagram.
Fig. 2 is disclosure filter construction schematic diagram.
Fig. 3-9 is disclosure thin film bulk acoustic wave resonator manufacturing process schematic diagram.
<symbol description>
The first substrate of 1-, 2- separation layer, 3- first electrode, 4- piezoelectric layer, 5- second electrode, 6- passivation layer, 7- second are served as a contrast
Bottom, the first pad of 8-, the first contact hole of 9-, the second contact hole of 10-, the first protrusion 11-, the second protrusion 12-, the first air of 13-
Chamber, the second air chamber of 14-, 15- third contact hole, the 4th contact hole of 16-, the second pad of 17-, 18- film bulk acoustic resonator
Device.
Specific embodiment
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
Attached drawing is described in further detail the disclosure.
Present disclose provides a kind of thin film bulk acoustic wave resonator, as shown in Figure 1, the thin film bulk acoustic wave resonator, comprising:
First substrate 1 and the piezo-electric stack structure that is formed on first substrate, which has one first
Contact hole 9 and one second contact hole 10；And
Second substrate 7 has one first protrusion 11 and one second protrusion 12；
Wherein, the first protrusion and the second protrusion of second substrate are contacted with the first of the piezo-electric stack structure respectively
Hole and the bonding of the second contact hole, and the first air chamber 13 is formed between second substrate and piezo-electric stack structure.
Further, first protrusion is corresponding with first contact hole, the second protrusion and second contact hole pair
It answers, the height of first protrusion is greater than the depth of first contact hole, and the height of second protrusion is greater than described second
The depth of contact hole.
The second air chamber 14 is formed on first substrate, second air chamber is opposite with the first air chamber position；
Preferably, second air chamber is located on the first substrate, with first electrode and second electrode weight in the piezo-electric stack structure
Folded region is opposite, and the second air cavity area is greater than or equal to the area of the overlapping region.In second air
Chamber two sides are respectively formed with third contact hole 15, the 4th contact hole 16, the third contact hole and the first contact hole site phase
Right, the 4th contact hole is opposite with the second contact hole site；The first pad 8 is formed at the third contact hole, in institute
It states and is formed with the second pad 17 at the 4th contact hole.
The piezo-electric stack structure includes: first electrode 3, the piezoelectric layer being formed in the first electrode 4 and is formed
In the second electrode 5 on the piezoelectric layer；First electrode, piezoelectric layer, second electrode three formed class sandwich structure, this three layers with
The overlapping region of one cavity is the effective district (Active area) of resonator.Optionally, the piezo-electric stack structure is also wrapped
Include: separation layer 2 and passivation layer 6, the first electrode 3 are formed on the separation layer, and the passivation layer 6 is formed in the second electrode
On.
First protrusion is bonded with first contact hole, first through first contact hole and the second electrode
Surface contact, second protrusion is bonded with second contact hole, and the through second contact hole and the first electrode
The contact of one surface；First pad is contacted through the third contact hole with the second surface of the second electrode, and described second
Pad is contacted through the 4th contact hole with the second surface of the first electrode；The first surface of the first electrode and
The second surface of the first electrode is opposite, the first surface of the second electrode and the second surface of the second electrode
Relatively.
In addition, the thin film bulk acoustic wave resonator may also include the electronic component being formed on second substrate, it should
Electronic component may include capacitor cell, inductance unit or other electronic components with standalone feature.
The bulk acoustic resonator structure of direct production on substrate is fixed on a sky by way of bonding by the disclosure
In air cavity, then by back-etching technique, the other side substrate portions of bulk acoustic wave resonator are removed, in bulk acoustic wave resonator
Upper and lower interface is respectively formed Air Interface.
Specifically, first substrate, the second substrate material can for silicon, SOI, glass, sapphire, silicon carbide,
GaAs、GaN、LiNbO3、LiTaO3Deng.
The material of the separation layer can be SiO2、Si3N4, silicon oxynitride, AlN etc..
The first electrode can be one of Mo, W, Al, Cu, Ir, Ru, Si or the composite junction of various material formation
Structure.
The material of the piezoelectric membrane is quartz, AlN, ZnO, PZT, LiNbO3、LiTaO3And combinations thereof, or be doping
There are quartz, AlN, ZnO, PZT, LiNbO of rare earth element3、LiTaO3And combinations thereof.
The material of the second electrode can be one of Mo, W, Al, Cu, Ir, Ru, Si or a variety of composite constructions, can
With with the identical material of first electrode, different materials can also be used.
The material of the passivation layer can be SiO2、Si3N4, silicon oxynitride, AlN, Al2O3Deng.
The pad can be one of Al, Cu, Au, Ti, Ni, Ag, W, TiW etc. or a variety of composite constructions.
The disclosure additionally provides a kind of filter, as shown in Figure 2 comprising cascade multiple film bulk acoustic resonators
Device 18, at least one of the multiple thin film bulk acoustic wave resonator is in series arm, at least one is in parallel connection
Branch.
In addition, the disclosure additionally provides a kind of production method of thin film bulk acoustic wave resonator, comprising:
The piezo-electric stack structure with one first contact hole and one second contact hole is formed on the first substrate；
One first protrusion and one second protrusion are formed on the second substrate；And
Be bonded the first protrusion of second substrate and the first contact hole of the second protrusion and the piezo-electric stack structure and
Second contact hole, and the first air chamber is formed between second substrate and piezo-electric stack structure.
Further, the production method of the thin film bulk acoustic wave resonator may also include that after the step of being bonded in institute
The first substrate of back surface etch away sections for stating the first substrate, is consequently formed third contact hole, the 4th contact hole and the second air
Chamber (two sides that third contact hole and the 4th contact hole are respectively formed in the second air chamber)；Third contact hole and piezo-electric stack structure
Second electrode contact, the 4th contact hole contacts with the first electrode of piezo-electric stack structure, and the second air chamber is located at piezo-electric stack
The lower section of first electrode and second electrode overlapping region in structure, and area is more than or equal to first electrode and second electrode is overlapped
The area in region.
Wherein, the step with the piezo-electric stack structure of one first contact hole and one second contact hole is formed on the first substrate
Suddenly include:
First substrate is provided；
Separation layer is formed on first substrate；
First electrode is formed on the separation layer；
Piezoelectric layer is formed on the first electrode, is etched the piezoelectric layer and is formed first contact hole and the second contact
Hole；
Second electrode is formed on the piezoelectric layer, etches the second electrode with exposure second contact hole；And
Passivation layer is formed in the second electrode, is etched the passivation layer and is connect with exposure first contact hole and second
Contact hole.
Optionally, the material for bonding is formed in the first contact hole and the second contact hole site.
In addition, including: the step of forming one first protrusion and second protrusion on the second substrate
One second substrate is provided, and
It etches second substrate and forms first protrusion and the second protrusion.
Optionally, the material for bonding is formed on the first protrusion and the second protrusion.
The manufacturing process of disclosure thin film bulk acoustic wave resonator is discussed in detail below in conjunction with attached drawing 3-9.The thin-film body sound
The production method of wave resonator specifically comprises the following steps:
S1 makes separation layer, first electrode comprising following sub-step:
S11 deposits one layer of separation layer 2 on the first substrate 1；Wherein, the separation layer 2 completely covers first substrate
1 front surface.
S12 deposits one layer of first electrode 3 on the separation layer 2；Wherein, described in 3 part of the first electrode covering
Separation layer 2, as shown in Figure 3.Specifically, first grow one layer of metal on the separation layer 2, then by this layer of metal etch at
First electrode 3 can be used the techniques such as sputtering, photoetching, etching and be formed.
S2 makes piezoelectric layer:
Specifically, first depositing a layer of piezo-electric material in the first electrode 3, the layer of piezo-electric material is then etched into pressure
Electric layer 4, as shown in Figure 4.Wherein, etching the piezoelectric material has one first contact hole 9 and one second contact hole to be formed
10 piezoelectric layer.At this point, etching terminates at the front surface of the separation layer at the first contact hole；At the second contact hole, carve
Erosion terminates at the first surface (i.e. front surface) of the first electrode.
S3 makes second electrode, passivation layer comprising following sub-step:
S31 first grows one layer of metal on the piezoelectric layer 4, then by this layer of metal etch at second electrode 5, etching
The techniques such as deposition, photoetching, etching can be used with exposure second contact hole in the second electrode.
S32 first deposits one layer of passivation layer 6 in the second electrode 5, and then Etch Passivation exposes the first contact hole
With the second contact hole, the techniques such as deposition, photoetching, etching can be used.The passivation layer 6 does not cover first contact hole and described
Second contact hole site, as shown in Figure 5.
S4 makes the second substrate 7, specifically, etching second substrate 7 forms the first protrusion 11 and the second protrusion 12,
As shown in Figure 6.
First substrate 1 is bonded with the second substrate 7, and first substrate 1 is thinned by S5, specifically, by described first
The first contact hole and the second contact hole of substrate 1 are bonded with the first protrusion of the second substrate 7 and the second protrusion respectively, form first
Air chamber 13, and the back surface of the first substrate 1 is carried out it is thinned, as shown in Figure 7.Specifically, thermocompression bonding, anode key can be passed through
Bonding is realized in the methods of conjunction, eutectic bonding, polymer-bound.
S6 makes pad.
As shown in figure 8, being performed etching from 1 back surface of the first substrate to it, the first substrate portions are removed, in the first substrate
Third contact hole 15, the 4th contact hole 16 and the second cavity 14 are formed on 1, to form Air Interface at the device back side.
Further, the first pad 8, the second pad 17, the first pad are made at third contact hole 15, the 4th contact hole 16
8 are connect by third contact hole 15 with the second electrode 5 of the piezo-electric stack structure, and the second pad 17 passes through the 4th contact hole
16 connect with the first electrode 3 of piezo-electric stack structure, also, the first pad 8, the second pad 17 respectively from third contact hole 15,
4th contact hole 16 extends to the back surface of the first substrate 1
In above method step, the lithographic method includes but is not limited to wet etch techniques, inductive couple plasma
Body (ICP) etching, reactive ion etching (RIE) etc..The deposition method includes but is not limited to that chemical vapor deposition, magnetic control splash
It penetrates, electrochemical deposition, atomic layer deposition (ALD), molecular beam epitaxy technique (MBE) etc..
In general, the production method of thin film bulk acoustic wave resonator described in the disclosure specifically include that on the first substrate according to
Secondary production separation layer, first electrode, piezoelectric layer, second electrode, passivation layer；One is placed on by the one of device by substrate bonding
In cavity；Device backing substrate part is removed, forms Air Interface at the device back side.Connect in addition, can be introduced at the device back side
Receiving electrode, pad etc., convenient device and other circuit connections.
In addition, the above-mentioned definition to each element and method is not limited in the various specific structures mentioned in embodiment, shape
Shape or mode, those of ordinary skill in the art simply can be changed or be replaced to it, such as:
(1) thin film bulk acoustic wave resonator can not also include separation layer；
(2) thin film bulk acoustic wave resonator can increase third electrode, the 4th electrode on or below second electrode；
(3) piezoelectric layer can be formed using the piezoelectric material of doping, can also be formed with undoped piezoelectric material,
The realization of the disclosure is not influenced.
In the instructions provided here, numerous specific details are set forth.It is to be appreciated, however, that implementation of the invention
Example can be practiced without these specific details.In some instances, well known method, structure is not been shown in detail
And technology, so as not to obscure the understanding of this specification.
Similarly, it should be understood that in order to simplify the disclosure and help to understand one or more of the various inventive aspects,
Above in the description of exemplary embodiment of the present invention, each feature of the invention is grouped together into single implementation sometimes
In example, figure or descriptions thereof.However, the disclosure should not be construed to reflect an intention that i.e. claimed
Invention requires features more more than feature expressly recited in each claim.More precisely, such as following right
As claim reflects, inventive aspect is all features less than single embodiment disclosed above.Therefore, it then follows tool
Thus claims of body embodiment are expressly incorporated in the specific embodiment, wherein each claim conduct itself
Separate embodiments of the invention.
It should also be noted that, can provide the demonstration of the parameter comprising particular value herein, but these parameters are without definite etc.
In corresponding value, but analog value can be similar in acceptable error margin or design constraint.The side mentioned in embodiment
It is only the direction with reference to attached drawing to term, such as "upper", "lower", "front", "rear", "left", "right" etc., is not used to limit this
The protection scope of invention.In addition, unless specifically described or the step of must sequentially occur, the sequences of above-mentioned steps there is no restriction in
It is listed above, and can change or rearrange according to required design.And above-described embodiment can be based on design and reliability
Consider, the collocation that is mixed with each other is used using or with other embodiments mix and match, i.e., the technical characteristic in different embodiments can be with
Freely form more embodiments.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects
Describe in detail bright, it should be understood that the foregoing is merely the specific embodiment of the disclosure, be not limited to the disclosure, it is all
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the protection of the disclosure
Within the scope of.
Claims (10)
1. a kind of thin film bulk acoustic wave resonator, comprising:
First substrate and the piezo-electric stack structure being formed on first substrate, the piezo-electric stack structure have one first contact hole
With one second contact hole；And
Second substrate has one first protrusion and one second protrusion；
Wherein, the first protrusion and the second protrusion of second substrate respectively with the first contact hole of the piezo-electric stack structure and
The bonding of second contact hole, and the first air chamber is formed between second substrate and piezo-electric stack structure.
2. thin film bulk acoustic wave resonator according to claim 1, wherein first protrusion and first contact hole pair
It answers, second protrusion is corresponding with second contact hole, and the height of first protrusion and the second protrusion is respectively greater than described
The depth of first contact hole and the second contact hole.
3. thin film bulk acoustic wave resonator according to claim 2, wherein
It is formed with the second air chamber on first substrate, second air chamber is opposite with the first air chamber position；
It is respectively formed with third contact hole, the 4th contact hole in second air chamber two sides, the third contact hole and described the
One contact hole site is opposite, and the 4th contact hole is opposite with the second contact hole site；
It is formed with the first pad at the third contact hole, is formed with the second pad at the 4th contact hole.
4. thin film bulk acoustic wave resonator according to claim 3, wherein the piezo-electric stack structure include: first electrode,
The piezoelectric layer being formed in the first electrode and the second electrode being formed on the piezoelectric layer；
First protrusion is bonded with first contact hole, the first surface through first contact hole and the second electrode
Contact, second protrusion are bonded with second contact hole, the first table through second contact hole Yu the first electrode
Face contact；
First pad is contacted through the third contact hole with the second surface of the second electrode, and second pad is through institute
The 4th contact hole is stated to contact with the second surface of the first electrode；
The first surface of the first electrode and the second surface of the first electrode are opposite, the second electrode it is described
First surface and the second surface of the second electrode are opposite；
Second air chamber is located on first substrate, with first electrode and second electrode weight in the piezo-electric stack structure
Folded region is opposite, and the second air cavity area is greater than or equal to the area of the overlapping region.
5. thin film bulk acoustic wave resonator according to claim 4, wherein
First substrate, the second substrate material be silicon, SOI, glass, sapphire, silicon carbide, GaAs, GaN, LiNbO3Or
LiTaO3；
The thin film bulk acoustic wave resonator further includes separation layer on the first substrate, and the material of the separation layer is SiO2、Si3N4、
One of silicon oxynitride or AlN or multiple combinations；
The first electrode, the material of second electrode are one of Mo, W, Al, Cu, Ir, Ru, Si or multiple combinations；
The material of the piezoelectric membrane is quartz, AlN, ZnO, PZT, LiNbO3、LiTaO3And combinations thereof, or for doped with dilute
Quartz, A1N, ZnO, PZT, LiNbO of earth elements3、LiTaO3And combinations thereof；
The thin film bulk acoustic wave resonator further includes passivation layer on the second electrode, and the material of the passivation layer is SiO2、Si3N4、
Silicon oxynitride, AlN or Al2O3。
6. a kind of production method of thin film bulk acoustic wave resonator, comprising:
The piezo-electric stack structure with one first contact hole and one second contact hole is formed on the first substrate；
One first protrusion and one second protrusion are formed on the second substrate；And
By the first protrusion of second substrate and the second protrusion respectively with the first contact hole of the piezo-electric stack structure and
Two contact holes are aligned and are bonded, and form the first air chamber between second substrate and piezo-electric stack structure.
7. the production method of thin film bulk acoustic wave resonator according to claim 6, wherein first protrusion and described the
One contact hole is corresponding, and the second protrusion is corresponding with second contact hole, and the height difference of first protrusion and the second protrusion is big
In the depth of first contact hole and the second contact hole.
8. the production method of thin film bulk acoustic wave resonator according to claim 6, further includes:
The second air chamber is formed on first substrate, second air chamber is opposite with the first air chamber position；
It is respectively formed third contact hole, the 4th contact hole in second air chamber two sides, the third contact hole and described first
It is opposite to contact hole site, the 4th contact hole is opposite with the second contact hole site；
The first pad is formed at the third contact hole, and the second pad is formed at the 4th contact hole.
9. the production method of thin film bulk acoustic wave resonator according to claim 6, wherein
Forming the step of having the piezo-electric stack structure of one first contact hole and one second contact hole on the first substrate includes:
First substrate is provided；
Separation layer is formed on first substrate；
First electrode is formed on the separation layer；
Piezoelectric layer is formed on the first electrode, is etched the piezoelectric layer and is formed first contact hole and the second contact hole；
Second electrode is formed on the piezoelectric layer, etches the second electrode with exposure second contact hole；And
Passivation layer is formed in the second electrode, is etched the passivation layer and is contacted with exposure first contact hole and second
Hole；
Include: in the step of forming one first protrusion and second protrusion on the second substrate
One second substrate is provided, and
It etches second substrate and forms first protrusion and the second protrusion.
10. a kind of filter comprising cascade multiple thin film bulk acoustic wave resonator as described in any one of claim 1-5.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109981070A (en) * | 2019-03-13 | 2019-07-05 | 电子科技大学 | A kind of cavity type bulk acoustic wave resonator and preparation method thereof without preparing sacrificial layer |
| CN111010128A (en) * | 2019-06-05 | 2020-04-14 | 天津大学 | Resonator with ring structure, filter and electronic equipment |
| CN111030634A (en) * | 2019-12-31 | 2020-04-17 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with electrical isolation layer, method of manufacturing the same, filter, and electronic apparatus |
| CN111030627A (en) * | 2019-12-31 | 2020-04-17 | 武汉衍熙微器件有限公司 | Method for manufacturing acoustic wave device and acoustic wave device |
| CN112039463A (en) * | 2019-08-09 | 2020-12-04 | 中芯集成电路（宁波）有限公司 | Method for manufacturing film bulk acoustic resonator |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050237132A1 (en) * | 2004-04-20 | 2005-10-27 | Kabushiki Kaisha Toshiba | Film bulk acoustic-wave resonator and method for manufacturing the same |
| CN1691498A (en) * | 2004-04-20 | 2005-11-02 | 株式会社东芝 | Film bulk acoustic-wave resonator and method for manufacturing the same |
| US20060043843A1 (en) * | 2004-08-25 | 2006-03-02 | Denso Corporation | Ultrasonic sensor |
| CN1975956A (en) * | 2005-11-30 | 2007-06-06 | 三星电子株式会社 | Piezoelectric RF MEMS device and method of fabricating the same |
| US20070247260A1 (en) * | 2006-04-25 | 2007-10-25 | Kabushiki Kaisha Toshiba | Electronic device |
| US20080284543A1 (en) * | 2007-05-17 | 2008-11-20 | Fujitsu Media Devices Limited | Piezoelectric thin-film resonator and filter |
| CN103296992A (en) * | 2013-06-28 | 2013-09-11 | 中国电子科技集团公司第二十六研究所 | Film bulk acoustic resonator structure and manufacturing method thereof |
| CN103474345A (en) * | 2012-06-05 | 2013-12-25 | 国际商业机器公司 | Method for shaping a laminate substrate |
| CN105262455A (en) * | 2015-10-09 | 2016-01-20 | 锐迪科微电子（上海）有限公司 | High-reliability FBAR (thin-film bulk acoustic resonator) and manufacturing method thereof |
| CN105262456A (en) * | 2015-10-09 | 2016-01-20 | 锐迪科微电子（上海）有限公司 | High-performance FBAR (thin-film bulk acoustic resonator) and manufacturing method thereof |
| US20170128983A1 (en) * | 2014-07-16 | 2017-05-11 | Chirp Microsystems, Inc. | Piezoelectric micromachined ultrasonic transducers using two bonded substrates |
| CN107004661A (en) * | 2014-09-19 | 2017-08-01 | 英特尔公司 | Semiconductor packages with embedded bridge joint cross tie part |
| CN107094001A (en) * | 2016-02-18 | 2017-08-25 | 三星电机株式会社 | Acoustic resonator and its manufacture method |
| CN107809221A (en) * | 2017-09-27 | 2018-03-16 | 佛山市艾佛光通科技有限公司 | A kind of cavity type FBAR and preparation method thereof |
-
2018
- 2018-07-27 CN CN201810842153.9A patent/CN109150127B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1691498A (en) * | 2004-04-20 | 2005-11-02 | 株式会社东芝 | Film bulk acoustic-wave resonator and method for manufacturing the same |
| US20050237132A1 (en) * | 2004-04-20 | 2005-10-27 | Kabushiki Kaisha Toshiba | Film bulk acoustic-wave resonator and method for manufacturing the same |
| US20060043843A1 (en) * | 2004-08-25 | 2006-03-02 | Denso Corporation | Ultrasonic sensor |
| CN1975956A (en) * | 2005-11-30 | 2007-06-06 | 三星电子株式会社 | Piezoelectric RF MEMS device and method of fabricating the same |
| US20070247260A1 (en) * | 2006-04-25 | 2007-10-25 | Kabushiki Kaisha Toshiba | Electronic device |
| US20080284543A1 (en) * | 2007-05-17 | 2008-11-20 | Fujitsu Media Devices Limited | Piezoelectric thin-film resonator and filter |
| CN103474345A (en) * | 2012-06-05 | 2013-12-25 | 国际商业机器公司 | Method for shaping a laminate substrate |
| CN103296992A (en) * | 2013-06-28 | 2013-09-11 | 中国电子科技集团公司第二十六研究所 | Film bulk acoustic resonator structure and manufacturing method thereof |
| US20170128983A1 (en) * | 2014-07-16 | 2017-05-11 | Chirp Microsystems, Inc. | Piezoelectric micromachined ultrasonic transducers using two bonded substrates |
| CN107004661A (en) * | 2014-09-19 | 2017-08-01 | 英特尔公司 | Semiconductor packages with embedded bridge joint cross tie part |
| CN105262455A (en) * | 2015-10-09 | 2016-01-20 | 锐迪科微电子（上海）有限公司 | High-reliability FBAR (thin-film bulk acoustic resonator) and manufacturing method thereof |
| CN105262456A (en) * | 2015-10-09 | 2016-01-20 | 锐迪科微电子（上海）有限公司 | High-performance FBAR (thin-film bulk acoustic resonator) and manufacturing method thereof |
| CN107094001A (en) * | 2016-02-18 | 2017-08-25 | 三星电机株式会社 | Acoustic resonator and its manufacture method |
| CN107809221A (en) * | 2017-09-27 | 2018-03-16 | 佛山市艾佛光通科技有限公司 | A kind of cavity type FBAR and preparation method thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109981070A (en) * | 2019-03-13 | 2019-07-05 | 电子科技大学 | A kind of cavity type bulk acoustic wave resonator and preparation method thereof without preparing sacrificial layer |
| CN111010128A (en) * | 2019-06-05 | 2020-04-14 | 天津大学 | Resonator with ring structure, filter and electronic equipment |
| CN112039463A (en) * | 2019-08-09 | 2020-12-04 | 中芯集成电路（宁波）有限公司 | Method for manufacturing film bulk acoustic resonator |
| CN112039463B (en) * | 2019-08-09 | 2024-03-12 | 中芯集成电路（宁波）有限公司 | Method for manufacturing film bulk acoustic resonator |
| CN111030634A (en) * | 2019-12-31 | 2020-04-17 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with electrical isolation layer, method of manufacturing the same, filter, and electronic apparatus |
| CN111030627A (en) * | 2019-12-31 | 2020-04-17 | 武汉衍熙微器件有限公司 | Method for manufacturing acoustic wave device and acoustic wave device |
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|---|---|
| CN109150127B (en) | 2022-10-28 |
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