CN204559430U - Intelligent power module and air conditioner - Google Patents

Abstract

The utility model provides a kind of Intelligent Power Module and a kind of air conditioner, and wherein, Intelligent Power Module comprises: upper brachium pontis signal input part, lower brachium pontis signal input part and temperature protection end; Driving chip, described driving chip is provided with the first port corresponding to temperature protection end, the first port is connected with temperature protection end by connecting line; Thermistor, between the low-pressure area power supply negative terminal being connected to described temperature protection end and Intelligent Power Module; From shutoff temperature protection circuit, its input is connected to described first port, and its output is connected to the Enable Pin of driving chip; If the temperature that thermistor senses Intelligent Power Module reaches predetermined value or connecting line disconnection, from turning off temperature protection circuit output low level enable signal.The utility model can be avoided working on during the connecting line open circuit of the temperature protection end of Intelligent Power Module inside and cause the generation of fortuitous event, improves the fail safe of Intelligent Power Module.

Description

Intelligent Power Module and air conditioner

Technical field

The utility model relates to Intelligent Power Module technical field, in particular to a kind of Intelligent Power Module and a kind of air conditioner.

Background technology

Intelligent Power Module (Intelligent Power Module, be called for short IPM) be a kind of analog line driver that power electronics discrete device and integrated circuit technique are integrated, Intelligent Power Module comprises device for power switching and high-voltage driving circuit, and with overvoltage, overcurrent and the failure detector circuit such as overheated.The logic input terminal of Intelligent Power Module receives the control signal of master controller, and output drives compressor or subsequent conditioning circuit work, sends the system status signal detected back to master controller simultaneously.Relative to traditional discrete scheme; Intelligent Power Module has the advantages such as high integration, high reliability, self-inspection and protective circuit; being particularly suitable for the frequency converter of drive motors and various inverter, is the desired power level electronic device of frequency control, metallurgical machinery, electric traction, servo-drive, frequency-conversion domestic electric appliances.

The structural representation of existing Intelligent power module circuit is as shown in Figure 1, inner at HVIC pipe 141, and TRIP end is connected with one end of resistance 106, the negative terminal of voltage comparator 105; Another termination GND of resistance 106; The anode of voltage comparator 105 is connected with the anode of voltage source 104; The negative terminal of voltage comparator 104 meets GND; The output signal of voltage comparator 105 is as the enable control signal in inside of HVIC pipe 141.As shown in Figure 2, thermistor 139 is connected with between the vdd terminal of Intelligent Power Module 100 and temperature protection end TR.

Be connected by binding line between the TRIP end and the temperature protection end TR of Intelligent Power Module 100 of HVIC pipe 141, binding line may be aluminum steel, copper cash, gold thread, after injection moulding, binding line is wrapped up by plastic packaging material, Intelligent Power Module is generally arranged in outdoor environment, generate heat during work, so variations in temperature is larger in its life cycle, because the expansion rate of plastic packaging material and binding line is inconsistent, stress existence is pullled so have, binding line has the risk be torn, for existing Intelligent Power Module, because after binding line is torn, TRIP act as low level by pull down resistor, so Intelligent Power Module 100 enable signal is high level, thus make existing Intelligent Power Module 100 continue to keep operating state, but lose the Intelligent Power Module after monitoring temperature 100 still to work on when temperature exceedes operating temperature ratings, this not only can cause the deterioration of IGBT constant power device, affect the useful life of Intelligent Power Module 100, and there is potential safety hazard: cause constant temperature to raise, make IGBT constant power element issue raw burn in excessive heating situation to ruin, because IGBT pipe bears high pressure and big current, under most of operating mode, burning of IGBT pipe can cause burning of whole Intelligent Power Module, even fire can be caused time serious.

Therefore, how can improve the fail safe of Intelligent Power Module, avoid the connecting line open circuit of the temperature protection end of Intelligent Power Module inside and cause fortuitous event become technical problem urgently to be resolved hurrily.

Utility model content

The utility model is intended at least to solve one of technical problem existed in prior art or correlation technique.

For this reason; an object of the present utility model is to propose a kind of new Intelligent Power Module; can avoid working on during the connecting line open circuit of the temperature protection end of Intelligent Power Module inside and cause the generation of fortuitous event, improve the fail safe of Intelligent Power Module.

Another object of the present utility model is to propose a kind of air conditioner.

For achieving the above object, according to the embodiment of first aspect of the present utility model, propose a kind of Intelligent Power Module, comprising: upper brachium pontis signal input part, lower brachium pontis signal input part and temperature protection end; Driving chip, described driving chip is provided with the binding post being connected to described upper brachium pontis signal input part and described lower brachium pontis signal input part respectively, and corresponding to the first port of described temperature protection end, described first port is connected with described temperature protection end by connecting line; Thermistor, the first end of described thermistor is connected to described temperature protection end, and the second end of described thermistor is connected to the low-pressure area power supply negative terminal of described Intelligent Power Module; From shutoff temperature protection circuit, the described input from turning off temperature protection circuit is connected to described first port, and the described output from turning off temperature protection circuit is connected to the Enable Pin of described driving chip;

Wherein, if the temperature that described thermistor senses described Intelligent Power Module reaches predetermined value or the disconnection of described connecting line, described from turning off temperature protection circuit output low level enable signal.

According to the Intelligent Power Module of embodiment of the present utility model, driving chip and above-mentioned HVIC manage, thermistor is connected by the temperature protection end in Intelligent Power Module, make from turning off temperature protection circuit can whether place in circuit carrys out output enable signal according to the resistance of thermistor and thermistor, and then when can guarantee between first port and temperature protection end of driving chip connecting line open circuit, can export and control the out-of-work enable signal of driving chip, avoid Intelligent Power Module to work on and produce security incident, improve the fail safe of Intelligent Power Module.

According to the Intelligent Power Module of above-described embodiment of the present utility model, following technical characteristic can also be had:

According to an embodiment of the present utility model, described thermistor is semistor; The described temperature protection circuit that certainly turns off comprises:

Comparator, the negative input end of described comparator is as the described input from turning off temperature protection circuit, and the negative input end of described comparator is also connected to the low-pressure area power supply anode of described Intelligent Power Module by resistive element; Voltage source, the positive pole of described voltage source is connected to the positive input terminal of described comparator, and the negative pole of described voltage source is connected to described low-pressure area power supply negative terminal, and the output of described comparator is as the described output from turning off temperature protection circuit.

According to the Intelligent Power Module of embodiment of the present utility model, because thermistor is semistor, therefore when the temperature of Intelligent Power Module is lower, the resistance of thermistor is less, and comparator exports high level enable signal; When the temperature of Intelligent Power Module is higher, the resistance of thermistor is comparatively large, comparator output low level enable signal; During connecting line open circuit between first port and temperature protection end of driving chip; comparator exports same output low level enable signal; when ensure that the connecting line open circuit of and temperature protection end higher in Intelligent Power Module temperature; Intelligent Power Module can be controlled quit work, effectively improve the fail safe of Intelligent Power Module.

According to an embodiment of the present utility model, also comprise: bridge arm circuit on three-phase, in each phase on described three-phase in bridge arm circuit, the input of bridge arm circuit is connected to the signal output part of corresponding phase in the three-phase high-voltage district of described driving chip; Bridge arm circuit under three-phase, under each phase under described three-phase in bridge arm circuit, the input of bridge arm circuit is connected to the signal output part of corresponding phase in the three-phase low-voltage district of described driving chip.

Wherein, on three-phase, bridge arm circuit comprises: bridge arm circuit in bridge arm circuit, W phase in bridge arm circuit, V phase in U phase; Under three-phase, bridge arm circuit comprises: the lower bridge arm circuit of the lower bridge arm circuit of U phase, V phase, the lower bridge arm circuit of W phase.

According to an embodiment of the present utility model, in each phase described, bridge arm circuit comprises: the first power switch pipe and the first diode, the anode of described first diode is connected to the emitter of described first power switch pipe, the negative electrode of described first diode is connected to the collector electrode of described first power switch pipe, the collector electrode of described first power switch pipe is connected to the high voltage input of described Intelligent Power Module, and the base stage of described first power switch pipe is as the input of bridge arm circuit in each phase described.

Wherein, the first power switch pipe can be IGBT (Insulated Gate BipolarTransistor, insulated gate bipolar transistor).

According to an embodiment of the present utility model, under each phase described, bridge arm circuit comprises: the second power switch pipe and the second diode, the anode of described second diode is connected to the emitter of described second power switch pipe, the negative electrode of described second diode is connected to the collector electrode of described second power switch pipe, the collector electrode of described second power switch pipe is connected to the anode of described first diode in corresponding upper bridge arm circuit, and the base stage of described second power switch pipe is as the input of bridge arm circuit under each phase described.

Wherein, the second power switch pipe can be IGBT (Insulated Gate BipolarTransistor, insulated gate bipolar transistor).

According to an embodiment of the present utility model, the emitter of described second power switch pipe under each phase described in bridge arm circuit is as the low reference voltage end of the corresponding phase of described Intelligent Power Module.

According to an embodiment of the present utility model, described first power switch pipe and described second power switch pipe include: insulated gate bipolar transistor.

According to an embodiment of the present utility model, the voltage of the high voltage input of described Intelligent Power Module is 300V.

According to an embodiment of the present utility model, in described driving chip, between the higher-pressure region power supply anode of each phase and higher-pressure region power supply negative terminal, be connected with filter capacitor.

According to the embodiment of the utility model second aspect, also proposed a kind of air conditioner, comprising: as the Intelligent Power Module described in above-mentioned any one embodiment.

Additional aspect of the present utility model and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by practice of the present utility model.

Accompanying drawing explanation

Above-mentioned and/or additional aspect of the present utility model and advantage will become obvious and easy understand from accompanying drawing below combining to the description of embodiment, wherein:

Fig. 1 shows the structural representation of the Intelligent Power Module in correlation technique;

Fig. 2 shows the external circuit structural representation of the Intelligent Power Module in correlation technique;

Fig. 3 shows the structural representation of the Intelligent Power Module according to embodiment of the present utility model;

Fig. 4 shows the internal structure schematic diagram from shutoff temperature protection circuit according to embodiment of the present utility model.

Embodiment

In order to more clearly understand above-mentioned purpose of the present utility model, feature and advantage, below in conjunction with the drawings and specific embodiments, the utility model is further described in detail.It should be noted that, when not conflicting, the feature in the embodiment of the application and embodiment can combine mutually.

Set forth a lot of detail in the following description so that fully understand the utility model; but; the utility model can also adopt other to be different from other modes described here and implement, and therefore, protection range of the present utility model is not by the restriction of following public specific embodiment.

Fig. 3 shows the structural representation of the Intelligent Power Module according to embodiment of the present utility model.

As shown in Figure 3, according to the Intelligent Power Module of embodiment of the present utility model, comprising: HVIC pipe 4101 (namely above-mentioned driving chip).

Wherein, the VCC end of HVIC pipe 4101 is connected with the low-pressure area power supply anode VDD of Intelligent Power Module 4100, and VDD is generally 15V; The HIN1 end of HVIC pipe 4101 is as brachium pontis input UHIN in the U phase of Intelligent Power Module 4100; The HIN2 end of HVIC pipe 4101 is as brachium pontis input VHIN in the V phase of Intelligent Power Module 4100; The HIN3 end of HVIC pipe 4101 is as brachium pontis input WHIN in the W phase of Intelligent Power Module 4100; The LIN1 end of HVIC pipe 4101 is as brachium pontis input ULIN under the U phase of Intelligent Power Module 4100; The LIN2 end of HVIC pipe 4101 is as brachium pontis input VLIN under the V phase of Intelligent Power Module 4100; The LIN3 end of HVIC pipe 4101 is as brachium pontis input WLIN under the W phase of Intelligent Power Module 4100; The TRIP end of HVIC pipe 4101 is connected with the temperature protection end TR of Intelligent Power Module 4100.

Six tunnel inputs of U, V, W three-phase of Intelligent Power Module 4100 receive the input signal of 0V or 5V.

The GND of HVIC pipe 4101 holds the low-pressure area power supply negative terminal COM as Intelligent Power Module 4100.

Each pin of HVIC pipe 4101 is described as follows:

VCC is the power supply anode of HVIC pipe 4101, and GND is the power supply negative terminal of HVIC pipe 4101, and VDD-GND voltage is generally 15V; VB1 and VS1 is respectively positive pole and the negative pole of the power supply of U phase higher-pressure region, and HO1 is the output of U phase higher-pressure region; VB2 and VS2 is respectively positive pole and the negative pole of the power supply of V phase higher-pressure region, and HO2 is the output of V phase higher-pressure region; VB3 and VS3 is respectively positive pole and the negative pole of the power supply of U phase higher-pressure region, and HO3 is the output of W phase higher-pressure region; LO1, LO2, LO3 are respectively the output of U phase, V phase, W phase low-pressure area.

The internal circuit configuration of HVIC pipe 4101 is as described below:

VCC end is connected with from the power supply anode turning off temperature protection circuit 4111; GND end is connected with from the power supply negative terminal turning off temperature protection circuit 4111; TRIP end is connected with from the input turning off temperature protection circuit 4111, from the Enable Pin of output as HVIC pipe 4101 turning off temperature protection circuit 4111.

The external circuit structure of HVIC pipe 4101 is as described below:

The VB1 end of HVIC pipe 4101 connects one end of electric capacity 4131, and as the U phase higher-pressure region power supply anode UVB of Intelligent Power Module 4100; The HO1 end of HVIC pipe 4101 is connected with the grid of brachium pontis IGBT pipe 4121 in U phase; The VS1 end of HVIC pipe 4101 and emitter-base bandgap grading, FRD (the Fast Recovery Diode of IGBT pipe 4121, fast recovery diode) anode of pipe 4111, the collector electrode of the lower brachium pontis IGBT pipe 4124 of U phase, the negative electrode of FRD pipe 4114, the other end of electric capacity 4131 be connected, and as the U phase higher-pressure region power supply negative terminal UVS of Intelligent Power Module 100.

The VB2 end of HVIC pipe 4101 connects one end of electric capacity 4132, and as the V phase higher-pressure region power supply anode VVB of Intelligent Power Module 4100; The HO2 end of HVIC pipe 4101 is connected with the grid of brachium pontis IGBT pipe 4122 in V phase; The VS2 end of HVIC pipe 4101 is connected with the anode of the emitter-base bandgap grading of IGBT pipe 4122, FRD pipe 4112, the collector electrode of the lower brachium pontis IGBT pipe 4125 of V phase, the negative electrode of FRD pipe 4115, the other end of electric capacity 4132, and as the V phase higher-pressure region power supply negative terminal VVS of Intelligent Power Module 4100.

The VB3 end of HVIC pipe 4101 connects one end of electric capacity 4133, and as the W phase higher-pressure region power supply anode WVB of Intelligent Power Module 4100; The HO3 end of HVIC pipe 4101 is connected with the grid of brachium pontis IGBT pipe 4123 in W phase; The VS3 end of HVIC pipe 4101 is connected with the anode of the emitter-base bandgap grading of IGBT pipe 4123, FRD pipe 4113, the collector electrode of the lower brachium pontis IGBT pipe 4126 of W phase, the negative electrode of FRD pipe 4116, the other end of electric capacity 4133, and as the W phase higher-pressure region power supply negative terminal WVS of Intelligent Power Module 4100.

The LO1 end of HVIC pipe 4101 is connected with the grid of IGBT pipe 4124; The LO2 end of HVIC pipe 4101 is connected with the grid of IGBT pipe 4125; The LO3 end of HVIC pipe 4101 is connected with the grid of IGBT pipe 4126; The emitter-base bandgap grading of IGBT pipe 4124 is connected with the anode of FRD pipe 4114, and as the U phase low reference voltage end UN of Intelligent Power Module 4100; The emitter-base bandgap grading of IGBT pipe 4125 is connected with the anode of FRD pipe 4115, and as the V phase low reference voltage end VN of Intelligent Power Module 4100; The emitter-base bandgap grading of IGBT pipe 4126 is connected with the anode of FRD pipe 4116, and as the W phase low reference voltage end WN of Intelligent Power Module 4100.

The collector electrode of the collector electrode of the collector electrode of IGBT pipe 4121, the negative electrode of FRD pipe 4111, IGBT pipe 4122, the negative electrode of FRD pipe 4112, IGBT pipe 4123, the negative electrode of FRD pipe 4113 are connected, and as the high voltage input P of Intelligent Power Module 4100, P generally meets 300V.

Wherein, electric capacity 4131, electric capacity 4132 and electric capacity 4133 mainly strobe.

The effect of HVIC pipe 4101 is:

The logic input signal of 0 or the 5V of input HIN1, HIN2, HIN3 and LIN1, LIN2, LIN3 is passed to output HO1, HO2, HO3 and LO1, LO2, LO3 respectively, wherein HO1 be the logic output signal of VS1 or VS1+15V, the HO2 logic output signal that is VS2 or VS2+15V, the HO3 logic output signal that is VS3 or VS3+15V, LO1, LO2, LO3 are the logic output signals of 0 or 15V; The input signal of same phase can not be high level simultaneously, and namely HIN1 and LIN1, HIN2 and LIN2, HIN3 and LIN3 can not be high level simultaneously.

From the effect turning off temperature protection circuit 4111 be:

When TRIP is connected to the less resistance of resistance (when the temperature of Intelligent Power Module 4100 is lower), output exports high level, makes HVIC pipe 4101 according to the situation regular event of input signal;

When TRIP is connected to the larger resistance of resistance (when namely the temperature of Intelligent Power Module 4100 is higher) or unsettled (open circuit between temperature protection end TR and TRIP); output output low level, makes HVIC pipe 4101 be in non operating state.

As seen from the above analysis the beneficial effects of the utility model:

When because temperature the reason such as acute variation causes the line between TR and TRIP to disconnect repeatedly time, Intelligent Power Module quits work, and the temperature environment avoiding Intelligent Power Module worsens the generation causing fortuitous event further; And when normally connecting between TR and TRIP, the operating state of Intelligent Power Module is consistent with existing Intelligent Power Module.Therefore, under not changing existing Intelligent Power Module and using the prerequisite of automatically controlled environment, the fail safe of Intelligent Power Module can be improved, avoid the generation of the fortuitous event caused because of Intelligent Power Module reason.

Fig. 4 shows the internal structure schematic diagram from shutoff temperature protection circuit according to embodiment of the present utility model.

As shown in Figure 4; inner from turning off temperature protection circuit 4111; power supply anode is connected with one end of resistance 4106; the other end of resistance 4106 turns off temperature protection circuit 4111 input TRIP with oneself, the negative input end of voltage comparator 4105 is connected; the positive input terminal of voltage comparator 4105 is connected with the anode of voltage source 4104; the negative terminal of voltage source 4104 is the power supply negative terminal from turning off temperature protection circuit 4111, and the output of voltage comparator 4105 is the Enable Pin of HVIC pipe 4101.

Outside from turning off temperature protection circuit 4111; TRIP end to be held with the TR of Intelligent Power Module 4100 by binding line and is connected, one end of TR terminating resistor 5111, another termination power supply negative terminal of resistance 5111; wherein, resistance 5111 is thermistors of a positive temperature coefficient.

The operation principle of the present embodiment and the value of each key parameter are below described:

Resistance 4106 is designed to 10k Ω, and voltage source 4104 is designed to 5V, and when resistance 5111 is designed to 25 DEG C, 1k Ω, is 5k Ω when 100 DEG C, then

25 DEG C time, the voltage V-of the negative input end of voltage comparator 4105 is:

$V-=\frac{1}{1+10}\×15=1.36V$

I.e. V-=1.36V<V+, therefore voltage comparator 4105 exports high level, and HVIC pipe 4101 is enable, normally works;

100 DEG C time, the voltage V-of the negative input end of voltage comparator 4105 is:

$V->\frac{5}{5+10}\&times;15=5V$

I.e. V->V+, therefore voltage comparator 4105 output low level, HVIC pipe 4101 quits work.

And during line open circuit when between TRIP and TR, then the voltage V-of the negative input end of voltage comparator 4105 is:

$V-\&ap;\frac{\&infin;}{\&infin;+10}\&times;15=15V$

I.e. V-≈ 15V>V+, the same output low level of voltage comparator 4105, HVIC pipe 4101 is quit work, thus Intelligent Power Module 4100 is quit work, avoid Intelligent Power Module 4100 and be operated in without causing unexpected generation under monitoring temperature.

In addition, suppose that the normal working junction temperature of IGBT pipe is 100 DEG C, if the normal working junction temperature of IGBT pipe is 125 DEG C, then when resistance 5111 can be designed to 25 DEG C, 1k Ω, is 5k Ω when 125 DEG C, so analogizes.

More than be described with reference to the accompanying drawings the technical solution of the utility model; the utility model proposes a kind of new Intelligent Power Module; can avoid working on during the connecting line open circuit of the temperature protection end of Intelligent Power Module inside and cause the generation of fortuitous event, improve the fail safe of Intelligent Power Module.

The foregoing is only preferred embodiment of the present utility model, be not limited to the utility model, for a person skilled in the art, the utility model can have various modifications and variations.All within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.

Claims (10)

1. an Intelligent Power Module, is characterized in that, comprising:

Upper brachium pontis signal input part, lower brachium pontis signal input part and temperature protection end;

Driving chip, described driving chip is provided with the binding post being connected to described upper brachium pontis signal input part and described lower brachium pontis signal input part respectively, and corresponding to the first port of described temperature protection end, described first port is connected with described temperature protection end by connecting line;

Thermistor, the first end of described thermistor is connected to described temperature protection end, and the second end of described thermistor is connected to the low-pressure area power supply negative terminal of described Intelligent Power Module;

From shutoff temperature protection circuit, the described input from turning off temperature protection circuit is connected to described first port, and the described output from turning off temperature protection circuit is connected to the Enable Pin of described driving chip;

Wherein, if the temperature that described thermistor senses described Intelligent Power Module reaches predetermined value or the disconnection of described connecting line, described from turning off temperature protection circuit output low level enable signal.

2. Intelligent Power Module according to claim 1, is characterized in that, described thermistor is semistor;

The described temperature protection circuit that certainly turns off comprises:

Comparator, the negative input end of described comparator is as the described input from turning off temperature protection circuit, and the negative input end of described comparator is also connected to the low-pressure area power supply anode of described Intelligent Power Module by resistive element;

Voltage source, the positive pole of described voltage source is connected to the positive input terminal of described comparator, and the negative pole of described voltage source is connected to described low-pressure area power supply negative terminal, and the output of described comparator is as the described output from turning off temperature protection circuit.

3. Intelligent Power Module according to claim 1 and 2, is characterized in that, also comprises:

Bridge arm circuit on three-phase, in each phase on described three-phase in bridge arm circuit, the input of bridge arm circuit is connected to the signal output part of corresponding phase in the three-phase high-voltage district of described driving chip;

Bridge arm circuit under three-phase, under each phase under described three-phase in bridge arm circuit, the input of bridge arm circuit is connected to the signal output part of corresponding phase in the three-phase low-voltage district of described driving chip.

4. Intelligent Power Module according to claim 3, is characterized in that, in each phase described, bridge arm circuit comprises:

First power switch pipe and the first diode, the anode of described first diode is connected to the emitter of described first power switch pipe, the negative electrode of described first diode is connected to the collector electrode of described first power switch pipe, the collector electrode of described first power switch pipe is connected to the high voltage input of described Intelligent Power Module, and the base stage of described first power switch pipe is as the input of bridge arm circuit in each phase described.

5. Intelligent Power Module according to claim 4, is characterized in that, under each phase described, bridge arm circuit comprises:

Second power switch pipe and the second diode, the anode of described second diode is connected to the emitter of described second power switch pipe, the negative electrode of described second diode is connected to the collector electrode of described second power switch pipe, the collector electrode of described second power switch pipe is connected to the anode of described first diode in corresponding upper bridge arm circuit, and the base stage of described second power switch pipe is as the input of bridge arm circuit under each phase described.

6. Intelligent Power Module according to claim 5, is characterized in that, the emitter of described second power switch pipe under each phase described in bridge arm circuit is as the low reference voltage end of the corresponding phase of described Intelligent Power Module.

7. Intelligent Power Module according to claim 5, is characterized in that, described first power switch pipe and described second power switch pipe include: insulated gate bipolar transistor.

8. the Intelligent Power Module according to any one of claim 4 to 7, is characterized in that, the voltage of the high voltage input of described Intelligent Power Module is 300V.

9. the Intelligent Power Module according to any one of claim 4 to 7, is characterized in that, is connected with filter capacitor in described driving chip between the higher-pressure region power supply anode of each phase and higher-pressure region power supply negative terminal.

10. an air conditioner, is characterized in that, comprising: Intelligent Power Module as claimed in any one of claims 1-9 wherein.