CN1940582A - Method and apparatus for inspecting mark on semi-conductor element - Google Patents
Method and apparatus for inspecting mark on semi-conductor element Download PDFInfo
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- CN1940582A CN1940582A CN 200610093748 CN200610093748A CN1940582A CN 1940582 A CN1940582 A CN 1940582A CN 200610093748 CN200610093748 CN 200610093748 CN 200610093748 A CN200610093748 A CN 200610093748A CN 1940582 A CN1940582 A CN 1940582A
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Abstract
The invention relates to a method and apparatus for acquiring laser marked image of vidicon, high contrast and low backgroud interferential element with fleet etch laser marked of image is inspected by element inspecting system. The method includes steps: irradiating surface of the semi-conductor package element with a low degree relative to horizontal level, acquiring image reflected by the surface of the semi-conductor package element at the low degree approximately by the vidicon. In other embodiment, acquired image is reflected with a low degree opposited to the irradiating direction. The acquired image also enable be reflected in the same direction as the irradiating direction with a low degree. Or the image is acquired at the lightest degree reflected by the surface of the semi-conductor package element. The reflector is used for reflecting the reflected image to the vidicon which installed on the top of the tested semi-conductor element with low degree.
Description
Technical field
The present invention relates to a kind of method that is used to check the lip-deep mark that carries out laser engraving or mark of semiconductor element, particularly semiconductor package part.Also disclose and adopted said method and can be combined in optical texture in the checkout facility.
Background technology
In the microelectronics manufacturing, comprise the semiconductor packages industry, need carry out mark to semiconductor element usually, to show first pin or spherical pin, thereby be convenient to correctly be installed on circuit board etc., or the title of the model of indicator elment or code, batch number, manufacturer or logo etc.
In labeling process, pigment or printing ink are used to produce the point or the marking on the top surface of packaging part, but miniaturization and big integrated scale for integrated circuit, naked brilliant size and corresponding package size are dwindled, can significantly reduce for the area that mark uses, thereby the resolution of ink drop size and printing speed become problem.Therefore, laser labeling method is comparatively desirable.
Because the amount of etched packaging part is very big, therefore laser labelling carves very gently or is ablated to such degree usually on package surface, that is, be not easy, thereby be marked at by video camera with unshowy in the image that the optics setting is shot usually at present from as seen arbitrarily angled.Add the reason of the intrinsic background interference (noise) that exists in most of optics settings and the image capturing system, mark becomes more difficult and is awared.
Have a variety of means of illuminations to be used, modal is LED (light emitting diode), because it has flexibility thereby can be disposed in the illuminator component and controller with different shape and size, and long service life, the brightness height, and energy consumption is low.
Semiconductor element normally encapsulates like this, promptly utilizes naked crystalline substance of resin moulded compound sealing semiconductor and relevant lead frame thereof.Then, utilize laser beam to etch product identifier on the surface of the molding compounds of sclerosis, laser beam produces the ablation trace with expection image or mark shape on the compound surface of semiconductor element by its pure heat energy.
The molding compounds that is sealing element may be based on the technology of its composition and molding and curing and is changed its optical characteristics.The optical characteristics of molding compounds is vital for determining best angle that shines to element surface and the best angle of clearly observing mark.Usually, molding compounds is a black, and its surface is reflective gloss slightly.
Depend on power, focus and the time of the light beam that applies and the essence of molding compounds material, the degree of depth, width and the ablation degree that are etched in the mark trace on the molding compounds may change.Generally speaking, the degree of ablation is high more, and the width of ablation trace is big more, and then laser labelling is easier is comparatively speaking seen (even from arbitrarily angled) by naked eyes or video camera.On the other hand, if the ablation degree of ablation trace is low and narrow, then the visual of mark significantly descends.
This may be based on such fact, and the degree of promptly ablating is high more, and the change of optical property on molding compounds surface is big more.Compare with the original chemical surface, the glossiness that becomes usually of the surface with ablation trace reduces, and the diffusion of light reflectivity is even more serious.Significantly different optical spectrum and intensity can be reflected to the observer in unaffected molding compounds surface, thereby can feel that mark and its surrounding environment have good contrast.
The lip-deep etching mark of molding compounds has also produced uneven apparent shape.The light diffusion characteristic of mark is strengthened and improved to this feature, and the surrounding environment compound keeps having gloss.Fundamentally, diffusing surface can be along all lateral dispersion incident lights, and glossy surface only reflects incident light along a direction morely.In addition, the flaxen laser ablation trace that is rendered as of isolabeling is compared, and the black color of molding compounds is light absorptive in itself.The difference of absorptivity causes two contrasts between the zone to increase, thereby helps to make that the visuality of mark improves.
Therefore the conventional semiconductors checking elements system that is used to check laser labelling provides a kind of traditional optical texture, the directed element of low angle incident illumination light (with respect to the horizontal plane) wherein, video camera be disposed in element directly over.Video camera can comprise one can be with the optical device of image capture on medium, or imageing sensor charge-coupled device (CCD) for example.
Shown in Fig. 1 (prior art), typical checking elements system uses video camera 10, and it is connecting the structure of suitable supply incident light 12, with the feature of being examined on the surface 14 of illuminating element 20, and the described letter " A " that is characterized as with mark 14a indication.Video camera 10 photographs the image 14b of element, and view data is fed to the processing unit (not shown), comes marking whether and can being accepted of decision element at this according to predetermined criterion of acceptability.Therefore, importantly, the image 14b that is obtained from the surface of semiconductor element 20 by video camera 10 should as shown in Figure 1, and not have background interference with good contrast (contrast) show tags.
Except background interference, also there is another potential problem in the image that is obtained.This is that unevenness characteristic by the molding compounds surface causes, although promptly described surface has glossy appearance, has small jump (pop corn) structure.This structure causes light scattering effect, thereby has spuious speck to be captured and to be recorded in the image that is obtained around causing on the molding compounds surface.This speck that is commonly referred to as the interference (noise) of jumping has added interference component to the surrounding environment of the mark of being seen in the image that is obtained.
As shown in Figure 1, low-angle incident light 12 can be reflected in spuious mode less, that one-way is higher by the glossy surface 14 of molding compounds, and most light is reflected with the angle identical with incident angle.If incident light 12 is enough little in the unmarked lip-deep incident angle of molding compounds, then it can all be avoided being positioned at the video camera 10 directly over the element 20 basically and be reflected.
On the other hand, by the only diffused light 16 of mark reflection, promptly along all directions, comprise towards video camera 10 and being reflected.If incident light 12 is enough strong, then video camera 10 can be captured the enough light by mark 14a reflection, and is difficult to be subjected to the interference of light from unmarked gloss molded surface 14 reflections.The image that is produced is the contrast preferable image 14b about mark that is obtained by video camera 10, as shown in Figure 1.
Referring to Fig. 2, wherein light 12 shines semiconductor component surfaces 14 with bigger incident angle with respect to the horizontal plane, as shown in the figure, has more a high proportion of reflected light 13 from unmarked gloss molding compounds surface 14 and enters video camera 10.This can interfere the marking image 14b that is obtained, and therefore reduces the contrast that is marked among the image 14b, as shown in Figure 2.
Referring to Fig. 3, wherein mark is by the dark etching of laser beam, and incident light 12 is from the almost vertically top incident of semiconductor element 20.Because the etching position of the trace of formation mark 14a is darker, therefore a high proportion of incident light 12 that illuminates mark 14a is captured by molded surface 14 or is absorbed.As a result, have only light to be reflected in the video camera, cause in the image 14b that is obtained, producing dark marking image and bright surrounding environment part, as shown in Figure 3 than small scale.Illumination as shown in Figure 3 and optical texture are the another kind of methods that adopts usually in the traditional semiconductor element check system, and it is limited and can not install under the situation of irradiator with low angle mainly to be used in the space.
With reference to the background interference that the speck because of the reflection of aforementioned jump structure causes, it may be noted that optical device setting shown in Figure 3 can capture spuious blackening, but not the speck of aforementioned formation interference component.Be also pointed out that this phenomenon is different along the light scattering effect of all direction diffusions more equably with light.
Along with the incident light intensity increases, jumping to disturb also increases pro rata.If the contrast that is marked in the image that is obtained is relatively poor, for example under the situation of shallow etch mark, increase incident intensity cause the jumping enlarged degree greater than flag of structure itself.If watch this situation can receiving by molding compounds on the larger proportion spurious reflections direction of light, the marking image that is obtained can be subjected to simultaneously jumping structure and from the negative effect of the surrounding environment interference component of molding compounds, thus make mark extremely fuzzy.
As previously mentioned, the shallow etch laser labelling does not strengthen visual possibility.This comprises following situation, and promptly the ablation intensity of molding compounds is lower or more shallow, the narrower and/or unmarked surf zone of ablation trace is coarse, thereby produces tangible surrounding environment jump interference problem in the image that is obtained.In fact, the shallow etch mark all can not be observed at the optical texture shown in Fig. 1 to 3 in the front, in other words, the marking image poor contrast of being obtained or visual poor, thus cause rejection rate to increase.
The conventional semiconductors checking elements system that is used to check the laser labelling on semiconductor package part or the element can not check very shallow etching laser labelling.Yet the responsibility of semiconductor element manufacturer is to guarantee that laser labelling is etched to enough degree so that the marking image sufficiently clear of being obtained.Therefore, the fabricator of this check system often payes attention to aspect the improvement not enoughly in that existed system is made, and often expects that in order to address the above problem the semiconductor packages merchant more notes the laser-induced thermal etching degree of depth.
Summary of the invention
The present invention's expectation provides a kind of method and apparatus to overcome aforementioned disadvantages, wherein the laser labelling image that video camera is taken is made improvement, so that the laser labelling image has high-contrast and low background interference composition, be suitable for carrying out mark check by the checking elements system.
Method of the present invention is created out, it can be so that the image that is molded as the lip-deep mark of branch of semiconductor element or packaging part has high-contrast and low background interference composition, described mark comprises the mark that is etched in the semiconductor package part surface very shallowly, also comprises the mark that is formed by laser-induced thermal etching.The equipment that is used to implement said method also is disclosed.
Aspect first, provide a kind of method that is used to check the lip-deep mark of semiconductor package part of the present invention, may further comprise the steps:
-shine described semiconductor package part surface with a low angle (low angle) with respect to the horizontal plane;
-obtain from the image of described semiconductor package part surface reflection with about described low angle;
Wherein, it is different with unmarked surface to be formed on the light diffuse reflectance (light diffusion) on the surface of the mark on the described semiconductor package part.
Utilize said method, by on the semiconductor package part surface, carrying out shallow etch, for example carrying out the mark that laser ablation or other photoetching form on the semiconductor package part surface and can be observed.
In a second aspect of the present invention, the image that is obtained is to reflect with low angle on the direction relative with direction of illumination.Preferably, the image that is obtained reflects with low angle on the direction relative with direction of illumination.Also preferably, obtaining image by the brightest angle of irradiates light of semiconductor package part surface reflection.
In a third aspect of the present invention, the image that is obtained is reflexed to the position that approximately is positioned at the semiconductor package part top with a low angle by at least one reflecting surface.Preferably realize reflection by two reflecting surfaces, the angle of inclination of described reflecting surface is adjustable.Preferably, this low angle is with respect to the horizontal plane about 15 ° to 30 °.Also the irradiating angle of preferred irradiates light is adjustable.
The embodiment that is used to implement the equipment of said method also is disclosed at this.
Description of drawings
With reference to accompanying drawing and following detailed, the present invention may be better understood, and wherein, certain embodiments shows in infinite mode and describes.
Fig. 1 (prior art) is the synoptic diagram of first kind of equipment in the traditional structure;
Fig. 2 (prior art) is the synoptic diagram of second kind of equipment in the traditional structure;
Fig. 3 (prior art) is the synoptic diagram of the equipment in the third traditional structure;
Fig. 4 is the synoptic diagram of the equipment among first embodiment of the method according to this invention;
Fig. 5 is the synoptic diagram of the equipment in according to a second embodiment of the method according to the invention;
Fig. 6 is the synoptic diagram of the equipment in according to a third embodiment of the method according to the invention;
Fig. 7 is the synoptic diagram of the equipment among the 4th embodiment of the method according to this invention;
Embodiment
As the general embodiment in the wide region, of the present invention being used to checks that the method for the lip-deep mark of semiconductor package part may further comprise the steps: shine described semiconductor package part surface with respect to the horizontal plane a low angle, and obtain (shooting) image from described semiconductor package part surface reflection with about described low angle, the light diffuse reflectance on surface that wherein is formed on the mark on the described semiconductor package part is different with unmarked surface.
Essence of the present invention has been to find that the irreflexive light of the laser labelling on the semiconductor element is more than unmarked molding compounds surface on every side.Unmarked molding compounds surface around the mark has more gloss than mark usually.Therefore, when irradiates light drops on the semiconductor component surfaces with specific incident angle, mark can be on all directions reflected light relatively equably, but unmarked surface can be in narrow reflection angle scope reflects light, this reflection angle mainly is near equaling or being similar to the angle of incident angle.
In the first embodiment of the present invention, as be shown in Fig. 4, method of the present invention comprises with respect to the horizontal plane or the low angle irradiation incident light 22 of being examined the surface of semiconductor element, and such optical texture is provided, and wherein video camera 10 is observed mark effectively from the same side of incident light 22 and with about identical angle.Effectively viewing angle should be preferably along deviating from from the direction of light of molding compounds reflection, thereby can obtain (shooting) marking image 24 actually, as shown in Figure 4, and at mark 14a on every side from the interference minimum on unmarked molding compounds surface 14.The image that is obtained is the bright mark that is positioned on the dark background, thereby has good contrast and the interference of low surrounding environment.
If irradiating angle and observation angle are not carefully selected, still might occur in the then this structure jumping and disturb.However, because the background interference composition is reduced, the combined effect that produces is still less between the background interference composition on the unmarked molding compounds surface around jump effect interference component and the mark.
In second alternate embodiment, as be shown in Fig. 5, the change part of method of the present invention is that video camera 10 is positioned to the light that is reflected by molding compounds surface 14 with the strongest angular observation of light reflection on the direction of reflected light 23.This structure has reverse effect, promptly with unmarked molding compounds surface 14 as prospect, with mark as a setting details they are taken.Video camera 10 is with respect to being examined the opposite side that semiconductor element 20 is placed in the light source of incident light 22.The image 25 that is obtained has the embodiment reverse effect with the front as shown in Figure 5, if the incident light 22 that is promptly adopted has suitable high-intensity words, then image is rendered as dark mark, and the unmarked surface around the mark is rendered as bright background.
Preferably, the incident angle of incident light 22 is a low angle (with respect to the horizontal plane or examined the surface plane of semiconductor element).Also preferably, image is that the opposite side at incident light 22 is obtained by reflected light 23 with or angle same similar to little incident angle for element.Most preferably, image is to be obtained by the brightest angle of light of semiconductor package part surface 14 reflections.
May there be some practical problemss, for example when implementing above-mentioned two embodiment of the inventive method, may run into the difficulty aspect equipment and the structural arrangement.For example, as shown in Figure 4 video camera 10 and light source are installed in the same side of examined semiconductor element, may meet difficulty owing to be obstructed problem etc. of space constraint, shade projection problem, light.Also be difficult in this structure camera installation device is configured to allow to a certain degree adjusting is carried out at the visual angle, to satisfy the requirement of accurately adjusting the visual angle.Should be pointed out that video camera may be heavier and to its mechanical bias sensitivity at installed position.Therefore, camera installation device is preferably fixing and solid.
Also have a problem to relate to the special sense of observer when the small inclination observed objects, particularly under such low angle, have a series of when being subjected to closely adjacent each other or other object of observed objects near actual observed object.The observer possibly can't really accurately discern the current object that is acquired image, and this is that the observer can not recognize the accurate focus of video camera or the observation place of video camera immediately because under such inclination angle.
In the fast moving check system, for example in the roll coil of strip technology of semiconductor assembling, a plurality of semiconductor elements are placed in the indent of carrying band in mode adjacent one another are, if observe with such low angle, the personal error possibility of recognition component is bigger in then detecting, particularly add people's brains and the weakness of eyesight aspect, for example parallax.
Most of observation people wishes that optical texture is very similar to the optical texture of the aforementioned conventional shown in Fig. 1 to 3, promptly video camera 10 be placed in examined object directly over.At so traditional camera position, can observe examined object hardly by mistake.Therefore,, also in embodiment subsequently, provide such Camera Positioning, i.e. object or semiconductor element that the correct easily identification of observer is observed according to thought of the present invention.
For this reason, in the 3rd alternate embodiment of the present invention, as shown in Figure 6, the video camera 10 in the structure of the present invention be positioned in such position, promptly can be subjected to observed objects or semiconductor element 20 directly over the position obtain image.In order to make video camera obtain light by semiconductor component surfaces reflection with a low angle, in first embodiment, be provided with at least one reflecting surface, for example catoptron.
Yet, preferably be provided with two reflecting surfaces 32,34 or catoptron, as shown in Figure 6.Video camera be installed in detected its mark semiconductor element directly over.Incident light 22 is radiated on the element with respect to the horizontal plane a low angle, preferred 15 ° to 30 °.After arriving element surface, reflect reflected light 23 with the low angle that approximately equates.Labeled surface is with the mode reflection ray of the reflected light 26 of diffusion, reflected light can be reflected in the same side of incident light 22 surface for example first catoptron 32 pick up with angle on a large scale with respect to the horizontal plane, second reflecting surface for example second catoptron 34 can be configured to the reflected image 26a from first catoptron 32 is reflected forming reflected light 26b, thereby the video camera 10 that image can be positioned in directly over the semiconductor element picks up.
Preferably, first catoptron is positioned in the same side of incident light 22 with respect to the horizontal plane about 50 ° angle receives and reflection is reflected by semiconductor component surfaces mark 14a oncoming reflected light 26.So the image 25 that forms has the bright mark that is positioned on dark background or the surrounding environment.By changing in described two catoptrons 32,34 at least one inclination angle or oblique angle, can easily change the visual angle of video camera 10, and not need to change the angle of inclination of video camera 10.In fact, by simple tilting gearing is provided on the mechanical supporting structure of irradiator, even the angle of incident light 22 also can easily change.Therefore, in some cases in order to obtain optimum, slight modification incident angle as previously mentioned and visual angle, this point can adopt in device structure of the present invention easily.
Described equipment can easily be transformed into the 4th alternate embodiment shown in Figure 7, and wherein the irradiator of settling with similar angle can shine semiconductor element on the direction relative with front direction shown in Figure 6.Irradiator can be placed in such angle, promptly being radiated at the unmarked lip-deep light of molding compounds gloss is reflexed on first catoptron 32 by the form with reflected light 27, first catoptron further reflects light to second catoptron, 34, the second catoptrons with the form of reflected light 27a and with the form of reflected light 27b light is upwards reflexed to video camera 10 again.The image that is obtained with top shown in Figure 6 opposite, promptly is labeled as the dark image that is positioned on bright background or the surrounding environment aspect contrast.
The present invention provides some advantages for checking elements system and coherence check system.At first, also be most important, be the picture quality that has improved mark, if particularly mark is by under the etched situation very shallowly.Such shallow etch element is carried out mark check, and this former meeting utilizes the present invention can obtain significantly more clear and reliable image owing to the thing that the poor contrast of mark is hindered now, therefore can be used in the production run.
Second point, because the orientation of video camera conforms to conventional art, and observer's perceptual error minimizes, so equipment of the present invention does not obviously depart from traditional optical texture.Like this, can be in the existing mechanical structure with the change application of minimum.
Thirdly, if necessary, incident angle and video camera visual angle all can be changed by simple mechanical device, and can accurately adjust to obtain optimum.
Be appreciated that, a plurality of previously described features can be through adjustment, modification, reconstruct and are used, perhaps, can be according to the wavelength of examined object body, light, the frequency of bandpass filters, the position of reverberator, and transform based on the element basal surface size that will be formed image, all these is considered to based on same basic idea of the present invention, feature and principle of work.These change and alternate embodiment can replacedly be used for previously described parts, element, material, processing step, and they can be taken as special description here but still adopt the alternate configurations or the embodiment of thought of the present invention and principle of work effectively.Therefore, can not think that they have broken away from the present invention, but should be considered to drop in the claim restricted portion.
Claims (25)
1. method that is used to check the lip-deep mark of semiconductor package part may further comprise the steps:
-shine described semiconductor package part surface with a low angle with respect to the horizontal plane;
-obtain from the image of described semiconductor package part surface reflection with about described low angle;
Wherein, it is different with unmarked surface to be formed on the light diffuse reflectance on surface of the mark on the described semiconductor package part.
2. the method for claim 1 is characterized in that, described mark forms by the semiconductor package surface is carried out shallow etch.
3. method as claimed in claim 2 is characterized in that, described etching realizes by the semiconductor package surface is carried out laser ablation.
4. as claim 2 or 3 described methods, it is characterized in that, described mark by shallow etch on the semiconductor package part surface.
5. the method for claim 1 is characterized in that, the image that is obtained is to reflect with low angle on the direction relative with direction of illumination.
6. the method for claim 1 is characterized in that, the image that is obtained is to reflect with low angle on the direction identical with direction of illumination.
7. method as claimed in claim 5 is characterized in that, described image is to obtain on the angle the brightest by the irradiates light of semiconductor package part surface reflection.
8. the method for claim 1 is characterized in that, the image that is obtained is reflexed to the position that approximately is positioned at the semiconductor package part top by at least one reflecting surface with low angle.
9. method as claimed in claim 8 is characterized in that, described reflection realizes by two reflecting surfaces.
10. method as claimed in claim 8 or 9 is characterized in that the angle of inclination of at least one described reflecting surface is adjustable.
11., it is characterized in that described low angle is with respect to the horizontal plane about 15 ° to 30 ° as arbitrary described method in the claim 1 to 9.
12., it is characterized in that the irradiating angle of described irradiates light is adjustable as arbitrary described method in the claim 1,5 to 7.
13. an equipment that is used to check the lip-deep mark of semiconductor package part comprises:
-at least one light source, it is oriented with respect to the horizontal plane a low angle and shines described semiconductor package part surface;
-at least one image acquiring device, it comprises video camera, is used for obtaining from the image of described semiconductor package part surface reflection with about described low angle;
Wherein, it is different with unmarked surface to be formed on the light diffuse reflectance on surface of the mark on the described semiconductor package part.
14. equipment as claimed in claim 13 is characterized in that, described mark forms by the semiconductor package surface is carried out shallow etch.
15. equipment as claimed in claim 14 is characterized in that, described etching realizes by the semiconductor package surface is carried out laser ablation.
16. as claim 14 or 15 described equipment, it is characterized in that, described mark by shallow etch or the engraving on the semiconductor package part surface.
17. equipment as claimed in claim 13 is characterized in that, image acquiring device obtains on the direction relative with direction of illumination by the semiconductor package part surface image with the low angle reflection.
18. equipment as claimed in claim 13 is characterized in that, image acquiring device obtains on the direction identical with direction of illumination by the semiconductor package part surface image with the low angle reflection.
19. equipment as claimed in claim 17 is characterized in that, the angle of obtaining of image acquiring device is adjustable, to obtain image by the brightest angle of irradiates light of semiconductor package part surface reflection.
20. equipment as claimed in claim 13 is characterized in that, the image that is obtained is reflexed to the Image Acquisition position that is positioned at the semiconductor package part top by at least one reflecting surface with low angle, and described reflecting surface comprises catoptron.
21. equipment as claimed in claim 20 is characterized in that, described reflection realizes by two reflecting surfaces.
22., it is characterized in that the angle of inclination of reflecting surface is adjustable as claim 20 or 21 described equipment.
23., it is characterized in that described low angle is with respect to the horizontal plane about 15 ° to 30 ° as arbitrary described equipment in the claim 13 to 22.
24., it is characterized in that the irradiating angle of described irradiates light is adjustable as arbitrary described equipment in the claim 13,17 to 18.
25. as arbitrary described equipment in the claim 20 to 24, it is characterized in that described image acquiring device comprises video camera, have about 50 ° visual field with respect to the horizontal plane.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MYPI20052765 | 2005-06-17 | ||
| MYPI20052765 | 2005-06-17 |
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| CN1940582A true CN1940582A (en) | 2007-04-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200610093748 Pending CN1940582A (en) | 2005-06-17 | 2006-06-16 | Method and apparatus for inspecting mark on semi-conductor element |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107894561A (en) * | 2017-12-13 | 2018-04-10 | 镭神技术（深圳）有限公司 | One kind automation chip strip test machine |
| CN110235002A (en) * | 2017-03-09 | 2019-09-13 | 伊斯梅卡半导体控股公司 | Test suite and method for detecting electric component |
-
2006
- 2006-06-16 CN CN 200610093748 patent/CN1940582A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110235002A (en) * | 2017-03-09 | 2019-09-13 | 伊斯梅卡半导体控股公司 | Test suite and method for detecting electric component |
| CN107894561A (en) * | 2017-12-13 | 2018-04-10 | 镭神技术（深圳）有限公司 | One kind automation chip strip test machine |
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