CN1851897A - Electrostatic chuck - Google Patents
Electrostatic chuck Download PDFInfo
- Publication number
- CN1851897A CN1851897A CN 200510126348 CN200510126348A CN1851897A CN 1851897 A CN1851897 A CN 1851897A CN 200510126348 CN200510126348 CN 200510126348 CN 200510126348 A CN200510126348 A CN 200510126348A CN 1851897 A CN1851897 A CN 1851897A
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- electrode
- electrostatic chuck
- positive electrode
- negative electrode
- insulating barrier
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Abstract
This invention relates to a static chuck with double electrodes including an insulation layer and an electrode in the insulation layer including a positive pole and a negative pole spliced together to form a round pole, in which, the positive pole is composed of a round part at the central position and even fan parts uniformly distributed and integrated with the round part. Advantage: since the positive and negative poles are spliced to form a round part and the negative part is composed of a round part at the center and even fan parts distributed uniformly and integrated with the round part, it is distributed uniformly in the entire sphere of 360deg. to realize uniform symmetrically.
Description
Technical field
The present invention relates to the electrostatic chuck in the semiconductor etching device, particularly a kind of electrostatic chuck with bipolar electrode.
Background technology
In semiconductor fabrication process and LCD manufacturing process, be fixing and supporting wafers, avoid occurring in the processing procedure moving or inconsistent phenomenon, usually use electrostatic chuck (being called for short ESC:Electrostaticchuck).Electrostatic chuck adopts electrostatic attraction to fix wafer, and mechanical chuck and vacuum cup compared with former employing have a lot of advantages.Electrostatic chuck has reduced in the wafer breakage of using mechanical chuck to cause owing to reasons such as pressure, collisions; Increased the area that wafer can effectively be processed; Reduced the deposition of wafer surface corrosion composition granule; Make wafer and chuck can better carry out heat conduction; And can work under vacuum environment, vacuum cup then cannot.
A kind of typical electrostatic chuck is made up of insulating barrier and pedestal.Insulating barrier is used for supporting wafers, and electrode then is imbedded in the conductive plane under the insulating barrier.Electrostatic chuck be utilize the Coulomb force that produces before wafer and the electrode or utilize wafer and electrode between the Johnsen-Rahbek power that produces reach the purpose of fixed wafer.Pedestal then is used for the supports insulative layer, inserts the RF bias voltage, as cold well or supplying heat source, comes the temperature of control wafer.Come bonding with a kind of bonding agent between general ceramic layer and the pedestal.
Electrostatic chuck mainly is divided into single electrode, bipolar electrode according to the number of electrode.So-called single electrode as its name suggests, has only an electrode exactly.Bipolar electrode then has two electrodes.Single electrode must apply voltage to wafer in order to produce electrostatic attraction, must could produce electrostatic attraction under the situation that plasma works.Bipolar electrode does not then have this necessity.Compare with bipolar electrode, the benefit of unipolar maximum is just can produce big electrostatic force with low-voltage, but the bad processing of unipolar residual charge causes easily going wrong when discharging.Bipolar electrode discharges this at static and occupies very big advantage on the one hand.
This one side of shape at electrode has a lot of researchs, and its purpose all is to seek stable electrostatic attraction.The type of the pattern of electrode has two semi-circular electrodes, two concentric round electrodes, interdigitated electrode structure, entomodont.In semiconductor etching process, uniformity is the index that people pay close attention to the most.No matter be on temperature or attraction, uniformity all is an index that needs us constantly to improve.
For electrostatic attraction, we wish it to be symmetrically in whole circle, and formula distributes, to guarantee that wafer can be not banking.In dipolar electrostatic chuck known today, two semi-circular electrostatic chucks can be described as the poorest one of the electrostatic attraction uniformity, and it is strong on one side electrostatic attraction to occur, and the situation that another side is weak causes the wafer situation banking that is adsorbed.Concentric round shape and flute profile shape had appearred again afterwards.But the electrode of these shapes is not very desirable aspect degree symmetrically.
Summary of the invention
(1) technical problem that will solve
The objective of the invention is at above-mentioned the deficiencies in the prior art, a kind of electrode electrostatic attraction electrostatic chuck symmetrically is provided.
(2) technical scheme
For achieving the above object, the present invention adopts following technical scheme:
Electrostatic chuck of the present invention, comprise insulating barrier and be arranged on the interior electrode of insulating barrier, wherein electrode comprises positive electrode and negative electrode, described positive electrode and negative electrode are stitched together and form circle, and positive electrode is grouped into by the circular portion that is positioned at middle position with the equally distributed scallop of the even number of this circular portion one.
The area of wherein said positive electrode and the area of negative electrode equate.
Has 1～2mm gap between wherein said positive electrode and the negative electrode.
The external profile diameter of wherein said electrode is less than insulating barrier diameter 4～5mm.
The scallop of wherein said positive electrode is divided into 4.
(3) beneficial effect
The advantage and the good effect of electrostatic chuck of the present invention are: among the present invention, because being stitched together, positive electrode and negative electrode form circle, negative electrode is grouped into by the circular portion that is positioned at middle position with the equally distributed scallop of the even number of this circular portion one, so in 360 degree scopes of full circle, evenly distribute, and strict symmetry has realized the property symmetrically of electrostatic attraction well, can not allow wafer banking phenomenon occur.
Description of drawings
Fig. 1 is the structural representation of electrostatic chuck of the present invention
Fig. 2 is the electrode structure for amplifying schematic diagram among the present invention.
Among the figure: 1. positive electrode; 2. negative electrode; 3. insulating barrier.
Embodiment
Below in conjunction with accompanying drawing, further describe the embodiment of electrostatic chuck of the present invention, but be not used for limiting protection scope of the present invention.
Referring to Fig. 1.Electrostatic chuck of the present invention, comprise pedestal 4, insulating barrier 3 and be arranged on electrode in the insulating barrier 3, wherein electrode comprises positive electrode 1 and negative electrode 2, described positive electrode 1 and negative electrode 2 are stitched together and form circle, have the 1.5mm gap between positive electrode 1 and the negative electrode 2, this gap all is feasible in 1～2mm scope.Negative electrode 2 is grouped into by the circular portion that is positioned at middle position with 4 equally distributed scallop of this circular portion one.The fan-shaped part of positive electrode 1 also can be eight, ten etc., and according to the feasibility of processing technology, the fan-shaped part of positive electrode 1 is The more the better, but must be even number, to keep good symmetry.The area of the area of positive electrode 1 and negative electrode 2 equates or is equal substantially.The outer most edge diameter of positive electrode 1 is less than insulating barrier diameter 4～5mm.
More than be preferred forms of the present invention, according to content disclosed by the invention, some identical, replacement schemes that those of ordinary skill in the art can expect apparently all should fall into the scope of protection of the invention.
Claims (5)
1. electrostatic chuck, comprise insulating barrier and be arranged on the interior electrode of insulating barrier, wherein electrode comprises positive electrode (1) and negative electrode (2), it is characterized in that described positive electrode (1) and negative electrode (2) are stitched together forms circularly, and negative electrode (2) is grouped into by the circular portion that is positioned at middle position with the equally distributed scallop of the even number of this circular portion one.
2. electrostatic chuck according to claim 1 is characterized in that the area of described positive electrode (1) and the area of negative electrode (2) equate.
3. electrostatic chuck according to claim 1 is characterized in that having 1～2mm gap between described positive electrode (1) and the negative electrode (2).
4. electrostatic chuck according to claim 1, the external profile diameter that it is characterized in that described electrode is less than insulating barrier diameter 4～5mm.
5. electrostatic chuck according to claim 1 is characterized in that the scallop of described positive electrode (1) is divided into 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101263486A CN100362644C (en) | 2005-12-07 | 2005-12-07 | Electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101263486A CN100362644C (en) | 2005-12-07 | 2005-12-07 | Electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1851897A true CN1851897A (en) | 2006-10-25 |
| CN100362644C CN100362644C (en) | 2008-01-16 |
Family
ID=37133371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101263486A Active CN100362644C (en) | 2005-12-07 | 2005-12-07 | Electrostatic chuck |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100362644C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101378029B (en) * | 2007-08-30 | 2010-11-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Dual-electrode electrostatic chuck |
| CN101677053B (en) * | 2008-09-19 | 2014-03-19 | 圆益Ips股份有限公司 | Electrostatic chuck and manufacturing method thereof |
| CN111128834A (en) * | 2018-10-31 | 2020-05-08 | 昆山工研院新型平板显示技术中心有限公司 | Micro-component transfer apparatus and method of making the same |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4692836A (en) * | 1983-10-31 | 1987-09-08 | Toshiba Kikai Kabushiki Kaisha | Electrostatic chucks |
| US5557215A (en) * | 1993-05-12 | 1996-09-17 | Tokyo Electron Limited | Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus |
| US5781400A (en) * | 1995-09-20 | 1998-07-14 | Hitachi, Ltd. | Electrostatically attracting electrode and a method of manufacture thereof |
| JPH11186371A (en) * | 1997-12-22 | 1999-07-09 | Taiheiyo Cement Corp | Bipolar electrostatic chuck |
| US5969934A (en) * | 1998-04-10 | 1999-10-19 | Varian Semiconductor Equipment Associats, Inc. | Electrostatic wafer clamp having low particulate contamination of wafers |
| US6430022B2 (en) * | 1999-04-19 | 2002-08-06 | Applied Materials, Inc. | Method and apparatus for controlling chucking force in an electrostatic |
| JP2001302330A (en) * | 2000-04-24 | 2001-10-31 | Ibiden Co Ltd | Ceramic substrate |
| EP1305821B1 (en) * | 2000-08-02 | 2008-10-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Mobile holder for a wafer |
-
2005
- 2005-12-07 CN CNB2005101263486A patent/CN100362644C/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101378029B (en) * | 2007-08-30 | 2010-11-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Dual-electrode electrostatic chuck |
| CN101677053B (en) * | 2008-09-19 | 2014-03-19 | 圆益Ips股份有限公司 | Electrostatic chuck and manufacturing method thereof |
| CN111128834A (en) * | 2018-10-31 | 2020-05-08 | 昆山工研院新型平板显示技术中心有限公司 | Micro-component transfer apparatus and method of making the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100362644C (en) | 2008-01-16 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 100176 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Jiuxianqiao East Road, Chaoyang District, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |