CN101211810B - Electrostatic chuck apparatus - Google Patents
Electrostatic chuck apparatus Download PDFInfo
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- CN101211810B CN101211810B CN2006101715473A CN200610171547A CN101211810B CN 101211810 B CN101211810 B CN 101211810B CN 2006101715473 A CN2006101715473 A CN 2006101715473A CN 200610171547 A CN200610171547 A CN 200610171547A CN 101211810 B CN101211810 B CN 101211810B
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Abstract
The invention discloses an electrostatic chuck device using to support and fix wafers. The invention comprises a substrate, an insulation layer arranged on the surface on the substrate and an electrode arranged in the substrate below the insulation layer. The insulation layer includes a bossed round annular interface; the area of the bossed round annular interface accounts for 0.5 percent-50 percent of the upper surface area of the insulation layer. The shape and the distribution of the electrode is respectively corresponding to the bossed round annular interface. Due to the reduced interface area, the space of the non-interface has enough space for the circulation of the inert gas such as helium gas and heating conduct is evener as well as the even effect of the wafer surface temperature is more obvious. When the contact area between the insulation layer and the wafer is reduced, the invention also can provide enough static adsorption force so that the static discharge is easier; the time of the static discharge is reduced; the process efficiency of the wafer is improved as well.
Description
Technical field
The present invention relates to a kind of chuck assembly, relate in particular to a kind of electrostatic chuck apparatus of microelectronic applications.
Background technology
In semiconductor fabrication process and LCD process for manufacturing liquid crystal display, be fixing and supporting wafers, avoid the mobile or inconsistent phenomenon of wafer appearance in the processing procedure, often use chuck or sucker to fix and supporting wafers.Chuck commonly used or sucker have mechanical chuck, vacuum cup and electrostatic chuck (being called for short ESC:Electro Static Chuck).
Mechanical chuck fixes and supporting wafers by mechanical arm, and its shortcoming is that mechanical chuck is owing to reasons such as pressure, collision cause the wafer breakage easily; The motion of mechanical chuck in reaction chamber is easy to generate particle, and wafer is polluted; Mechanical chuck is when fixed wafer simultaneously, and the edge area that has also taken wafer has reduced the wafer utilance.
Vacuum cup utilizes negative pressure of vacuum to come " absorption " wafer to reach the purpose of holding chip as the term suggests be exactly to have adopted the vacuum principle, and its shortcoming is to work under vacuum environment.
Electrostatic chuck adopts electrostatic attraction to fix and supporting wafers, fixes with employing mechanical chuck and vacuum cup and compares with supporting wafers, and electrostatic chuck has a lot of advantages.At first, electrostatic chuck has reduced in the wafer breakage of using mechanical chuck to cause owing to reasons such as pressure, collisions; Secondly, can reduce the deposition of wafer surface corrosion composition granule by adopting electrostatic chuck, and make wafer and chuck that better heat conduction be arranged; At last, the processes of wafer can be worked under vacuum environment.
As shown in Figure 1, be a kind of structural representation of typical electrostatic chuck, described electrostatic chuck is made up of insulating barrier 1, electrode 2 and pedestal 3.Insulating barrier 1 is used for supporting wafers, 2 conductive planes that are imbedded under the insulating barrier 1 of electrode.Electrostatic chuck be utilize the Coulomb force that produces between wafer and the electrode or utilize wafer and electrode between Johnson of producing--draw Buick power (to be called for short: the purpose that J-R:Johnsen-Rahbek) reaches fixed wafer.3 of pedestals are used for supports insulative layer 1, insert the RF bias voltage, as cold well or supplying heat source, come the temperature of control wafer.General insulating barrier is made with pottery usually, comes bonding with a kind of bonding agent between ceramic layer and the pedestal.
Along with the raising of semiconductor integrated level, the character constancy of semiconductor device requires us to improve constantly interior processing of wafers piece number and chip production rate of unit interval.For this reason, in production process of semiconductor, should accelerate the speed of the heating and cooling of wafer and improve the temperature homogeneity of wafer.In semiconductor fabrication, because wafer constantly is subjected to the bombardment of plasma, temperature improves constantly, when surface temperature constantly raises, phenomenon may appear bursting in the surface, thus require us must try every possible means to reduce the temperature of wafer, and guarantee the uniformity of temperature.For this reason with insulating barrier that wafer contacts on, the gas passage of design groove feeds inert gases such as helium, improves the heat conduction between wafer and the electrostatic chuck, reaches the purpose of cooling wafer.The various via design of the refrigerating gas of temperature homogeneity have appearred seeking for this reason.Be illustrated in figure 2 as a typical electrostatic chuck upper surface access structure design.The access structure of Fig. 2 the serve as reasons circular path of several arranged concentric and the path net that equally distributed some latus rectums intersect to form.Studies show that,, can reach more uniform cooling effect by improving the area of noncontact face, and, in discharging wafer technique, for discharge time and reduce concerning wafer contamination, also be that the area of requirement noncontact face is The more the better.Obviously, the contact area among Fig. 2 has accounted for the overwhelming majority.Therefore, need design one and can not only reach enough Electrostatic Absorption power, and the electrostatic chuck little with the wafer contact-making surface.
Summary of the invention
In view of above-mentioned existing in prior technology problem, the objective of the invention is: provide a kind of and both can reach enough Electrostatic Absorption power, and the little electrostatic chuck of contact area.
The objective of the invention is to be achieved through the following technical solutions:
A kind of electrostatic chuck apparatus is used for supporting and fixed wafer, comprises pedestal, is located at the insulating barrier of pedestal upper surface and is located at electrode in the insulating barrier bottom base, and described insulating barrier comprises the contact-making surface with the wafer contact projection; The area of the contact-making surface of described projection accounts for 0.5%～50% of insulating barrier upper surface area.
The contact-making surface of described projection is the contact-making surface of circular projection.
The contact-making surface of described circular projection is at least one donut.
The width of the contact-making surface of described circular projection is 5～20mm.
The height of projection of the contact-making surface of described circular projection is 20～55um.
The shape of described electrode is similar to the contact-making surface shape of projection, is located in the pedestal of protruding contact-making surface below.
Described electrode comprises positive electrode and negative electrode.
The width of described electrode is than the contact face width 2～40mm of circular annular projection.
As seen from the above technical solution provided by the invention, electrostatic chuck apparatus of the present invention is by being provided with the contact-making surface of circular annular projection on insulating barrier, make the contact area of electrostatic chuck surface of insulating layer and wafer reduce, then can make the space of wafer noncontact face that abundant inert gases such as helium circulation is arranged, and because contact-making surface circular distribution, heat conduction is more even, reaches the wafer surface temperature effect of uniform.In addition, because contact area is little, the static of wafer discharges and is more prone to, thereby shortens the time that static discharges, and has improved the efficient of wafer process.And when the distribution of electrode is corresponding with the distribution of contact-making surface, then can on littler contact area, produce more effective absorption affinity, and because contact-making surface is a circular ring structure, thereby the inhomogeneous partially situation on one side of wafer that occurs of wafer absorption affinity that makes can not produced.
Description of drawings
Figure 1 shows that a kind of structural representation of typical electrostatic chuck;
Figure 2 shows that a kind of typical electrostatic chuck upper surface access structure schematic diagram;
Figure 3 shows that the contact-making surface structural representation of the circular projection of electrostatic chuck apparatus of the present invention;
Figure 4 shows that electrostatic chuck apparatus bipolar electrode structural representation of the present invention;
Figure 5 shows that the cross-sectional view of electrostatic chuck apparatus of the present invention.
Embodiment
Core of the present invention is the contact-making surface that projection is set on insulating barrier, reduce the contact area of insulating barrier and wafer, and the distribution of the distribution of electrode and protruding contact-making surface is corresponding, makes static discharge and be more prone to, shorten release time, improved the efficient of wafer process.
Below in conjunction with the specific embodiment of the invention accompanying drawing the present invention is elaborated.
As Fig. 3, shown in Figure 5, electrostatic chuck apparatus of the present invention, comprise pedestal, be located at the insulating barrier 31 of pedestal upper surface and be located at electrode in the insulating barrier bottom base, wherein electrode comprises positive electrode 33 and negative electrode 34, this insulating barrier 31 comprises the contact-making surface 32 of the circular projection that contacts with wafer, the area of the contact-making surface 32 of this circular projection accounts for 20% of insulating barrier 31 upper surface area, described insulating barrier 31 upper surface area are the area of wafer institute overlay area just, and this area percentage all is feasible in 0.5%～50% scope.The width of the contact-making surface 32 of circular projection is 10mm, and this width value all is feasible in 5～20mm scope, and the height of circular projection is 50um, and this height of projection value all is feasible in 20～55um scope.The contact-making surface 32 of circular projection is two donuts, and the number of annulus is two circles not only, and quantity is that even number is all passable.
As shown in Figure 4, for when adsorbing wafer, can produce enough Electrostatic Absorption power to wafer, the distribution of electrode is corresponding with the contact-making surface 32 of the circular projection of two circles on insulating barrier 31 surfaces, and the width that can make electrode is than the wide 10mm of annulus, and this value all is feasible in 2～40mm scope.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.
Claims (6)
1. electrostatic chuck apparatus is used for supporting and fixed wafer, comprises pedestal, is located at the insulating barrier of pedestal upper surface and is located at electrode in the insulating barrier, it is characterized in that described insulating barrier comprises the contact-making surface with the wafer contact projection; The area of the contact-making surface of described projection accounts for 0.5%～50% of insulating barrier upper surface area;
The shape of described electrode is similar to the contact-making surface shape of projection, is located in the insulating barrier of protruding contact-making surface below;
The contact-making surface of described projection is the contact-making surface of circular projection.
2. a kind of electrostatic chuck apparatus according to claim 1 is characterized in that, the contact-making surface of described circular projection is at least one donut.
3. a kind of electrostatic chuck apparatus according to claim 1 and 2 is characterized in that, the width of the contact-making surface of described circular projection is 5～20mm.
4. a kind of electrostatic chuck apparatus according to claim 3 is characterized in that, the height of projection of the contact-making surface of described circular projection is 20～55um.
5. a kind of electrostatic chuck apparatus according to claim 1 is characterized in that described electrode comprises positive electrode and negative electrode.
6. a kind of electrostatic chuck apparatus according to claim 5 is characterized in that, the width of described electrode is than the contact face width 2～40mm of circular annular projection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006101715473A CN101211810B (en) | 2006-12-30 | 2006-12-30 | Electrostatic chuck apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006101715473A CN101211810B (en) | 2006-12-30 | 2006-12-30 | Electrostatic chuck apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101211810A CN101211810A (en) | 2008-07-02 |
| CN101211810B true CN101211810B (en) | 2011-01-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006101715473A Active CN101211810B (en) | 2006-12-30 | 2006-12-30 | Electrostatic chuck apparatus |
Country Status (1)
| Country | Link |
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| CN (1) | CN101211810B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010056353A (en) * | 2008-08-29 | 2010-03-11 | Renesas Technology Corp | Manufacturing method of semiconductor device |
| CN102468205A (en) * | 2010-11-18 | 2012-05-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Tray and wafer processing equipment with same |
| CN104538333A (en) * | 2014-12-16 | 2015-04-22 | 瑞德兴阳新能源技术有限公司 | Tray for eliminating warping of wafer |
| CN107768300B (en) * | 2016-08-16 | 2021-09-17 | 北京北方华创微电子装备有限公司 | Chuck, reaction chamber and semiconductor processing equipment |
| CN111128834B (en) * | 2018-10-31 | 2022-09-06 | 成都辰显光电有限公司 | Micro-component transfer apparatus and method of manufacturing the same |
| CN112018021A (en) * | 2020-10-16 | 2020-12-01 | 苏州芯慧联半导体科技有限公司 | Electrostatic chuck with renewable performance and forming method thereof |
| CN114567957A (en) * | 2022-03-30 | 2022-05-31 | 上海众鸿半导体设备有限公司 | Wafer clamp and antistatic treatment method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1779939A (en) * | 2004-10-29 | 2006-05-31 | 东京毅力科创株式会社 | Substrate mounting table, substrate processing apparatus and substrate temperature control method |
-
2006
- 2006-12-30 CN CN2006101715473A patent/CN101211810B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1779939A (en) * | 2004-10-29 | 2006-05-31 | 东京毅力科创株式会社 | Substrate mounting table, substrate processing apparatus and substrate temperature control method |
Non-Patent Citations (3)
| Title |
|---|
| JP特开2000-317761A 2000.11.21 |
| JP特开2001-274228A 2001.10.05 |
| JP特开平6-314735A 1994.11.08 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101211810A (en) | 2008-07-02 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016, building 2, block M5, No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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