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CN1309425A - 半导体集成电路器件及其制造方法 - Google Patents

半导体集成电路器件及其制造方法 Download PDF

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Publication number
CN1309425A
CN1309425A CN01104622A CN01104622A CN1309425A CN 1309425 A CN1309425 A CN 1309425A CN 01104622 A CN01104622 A CN 01104622A CN 01104622 A CN01104622 A CN 01104622A CN 1309425 A CN1309425 A CN 1309425A
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CN
China
Prior art keywords
metal
semiconductor device
lead
resin
welding wire
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Granted
Application number
CN01104622A
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English (en)
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CN100380650C (zh
Inventor
宫木美典
铃木博通
金田刚
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Renesas Electronics Corp
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Hitachi Ltd
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Publication of CN1309425A publication Critical patent/CN1309425A/zh
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Publication of CN100380650C publication Critical patent/CN100380650C/zh
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Abstract

本发明提供一种能有效地防止由于施加到半导体集成电路器件的卡路里增加产生的线断开的措施。构成半导体集成电路器件以使含有Pd层的金属层提供在具有导电性的连接部件连接的部分中,熔点高于Sn－Pb共晶焊料熔点并含有无Pb作为主要组成金属的合金层提供在树脂模塑部分之外。此外,具有导电性的连接部分接合的部分中厚度等于或大于10μm的金属层提供在连接部件中。

Description

半导体集成电路器件及其制造方法
本申请涉及半导体集成电路器件，特别涉及能有效地防止焊丝断裂的技术。
在装配半导体集成电路的常规工艺中，进行了以下步骤。即，在Ag点电镀步骤中，对模具模塑的冲压或腐蚀的引线框架(下文称做内引线)的引线的前端部(包括通过Au线引焊丝键合芯片和引线框架得到的部分)施加Ag点电镀。接下来，在装配封装的步骤中，进行管芯粘结、焊丝键合以及要模塑封装的装配。在此后的外部电镀步骤中(包括浸渍步骤)，为了安装到印刷电路板或电路板上，按照外部电镀，Sn-Pb系列焊料层预先接合到包括没有被模具模塑的引线(下文称做外引线)和衬底之间的接触部分上。完成以上提到的Ag点电镀步骤和外部电镀步骤之后，进行加工产品的步骤。
然而，在需要考虑环境问题的近些年中，特别是，针对Pb的日本待审专利公开No.5-270860(USP No.5,633,090)等中指出的，即使在如半导体集成电路器件等的一般电子部件和安装板中，也需要将Pb减少到满足环境问题的水平。
通常，为了减少Pb，采用不含Pb作为主要金属的其它焊料(合金)，即无Pb替代焊料(由无Pb金属组成的焊料)代替外部电镀中使用的Sn-Pb焊料的措施。无Pb替代焊料要求具有类似于Sn-Pb的熔解温度范围和优良的粘结性，特别是润湿性。目前不存在完全满足要求的组合物，对应于如印刷电路板、芯片部分、半导体封装等部件选择性地使用焊料。因此，现已提出根据不同用途基于Sn的Sn基合金的不同组合物，例如，在日本待审专利公开No.10-93004(现有技术1)的发明中，使用Sn-Bi系列代替Sn-Pb系列用做接合并形成在常规引线中的焊料层使用的金属。此外，对于焊料的金属组合物的结构，在日本待审专利公开No.11-179586(WO99 30866)(现有技术2)中提出一种使用Sn-Ag-Bi系列焊料安装封装外引线和衬底的发明。
当外部电镀使用Sn-Pb共晶的无Pb替代焊料时，以与现有技术中提到的相同的方式在每次使用时选择Sn基合金，然而，特别是安装在运输工具、显著发展的移动电子装置上的部件和高可靠性的部件中，需要粘结强度和耐热疲劳特性优良的合金。现已知当优良的粘结强度、优良的耐热疲劳特性和高可靠性很重要时，Sn-Ag系列合金作为Sn基合金，Sn-Pb共晶焊料的熔点通常为183℃，相反，大多数Sn-Ag系列合金的熔点为200℃以上，高于Sn-Pb共晶焊料的熔点。因此，目前使用Sn-Pb共晶的无Pb替代焊料安装半导体集成电路时，回流温度不可避免地变高。于是，本申请的发明人在高于常规回流温度的回流温度下，装配Ag电镀内引线并使用熔点高于Sn-Pb共晶焊料熔点的无Pb替代焊料电镀外引线的半导体集成电路器件，并研究产品。结果，发明人发现由于线断裂产生劣质产品。
因此，本发明的目的是提供一种在高于常规回流温度的回流温度下装配使用熔点高于Sn-Pb共晶焊料熔点的无Pb替代焊料电镀外引线的半导体集成电路器件时能够有效地防止产生焊丝断裂的措施。
本发明的另一目的是提供一种能够有效地防止由于除回流温度增加之外通常施加到半导体集成电路器件的卡路里增加产生的线断裂的措施。
下面简要地介绍在本申请中公开的发明中一个代表性的发明的概要。因此，提供一种半导体集成电路器件，包括：
具有导电性的连接部件；
在与所述连接部件连接的部分处提供有包括钯层的金属层的被连接部件，其在树脂模塑部分外的部分提供有合金层，该合金层的熔点高于以Pb作为主要组成金属的焊料的熔点且其主要组成金属中不含Pb；以及
模塑所述被连接部分的树脂。
以上提到的发明使用Pd作为通过装置提供的金属通过电镀等方法接合和形成连接部件要连接的部分。由于对应于具有导电性的连接部件的Au焊丝等的焊丝和对应于如Cu合金和42合金等被连接材料的框材料之间的粘结特性没有问题，因此由于与Ag相比Pd为较硬金属，由毛细管的凹坑产生的不足减少，接合到每个被连接部件的金属厚度分布减少。此时，被接合和形成的位置设置为连接部件要连接的部分，这是由于位置要限制到连接部件的粘结特性没有问题的最小面积，因为Pd与Sn-Pb系列合金和Ag相比不是很便宜，特别是当用于接合和形成如具有较大面积的外引线等的模塑体外的部分时，不能有效地实现降低成本的目的。
对于由于接合和成形后向接合和成形的部分施加物理变形力的模塑工艺等产生的电镀裂纹等问题，本发明没有所述问题，因为电镀部分被模塑，没有成形或处理过。此外，还有可以避免Ag迁移以及电镀时不需要剧毒有害的氰等的优点。
此外，被连接部件构成为使得熔点高于Pb作为主要组成金属的焊料熔点以及不含有Pb作为主要组成金属的合金接合并形成在由树脂模塑部分外的部分上，这是由于要使用除Cu框架之外如42Ni-Fe合金等对应于框架材料和被连接部件的其它材料，以避免整个表面Pd电镀由于采用与内引线的前端部相同的Pd电镀时的材料成本不能实现成本降低的固有问题。
此外，本申请的发明人发现由于可以减小电镀厚度的分布和增加粘结强度，Pd电镀施加到内引线的前端部的本发明的技术想法也适用于缩短线和缩小芯片。
因此，下面简要地介绍本申请中公开的发明中另一个代表性的发明的概要。因此，提供一种半导体集成电路器件，包括：
直径等于或小于30mm的焊丝；
在与所述焊丝连接的部分处提供有包括钯层的金属层的被连接部件，其在树脂模塑部分外的部分提供有以Pb作为主要组成金属的焊料；以及
模塑所述被连接部分的树脂。
即使目前没有完全使用无Pb焊料，由于钯金属层接合并形成在连接部件上，由此提高了粘结强度，相对于管脚数量的增加和封装尺寸的增加，结构有效地提高了组件成品率和可靠性，由芯片缩小导致焊丝缩短(金属线直径等于或小于目前30μm的尺寸)。此外，由于钯金属层充分地接合并形成在要连接的部分上，因此除了内引线的前端部，根据结合和形成步骤的成本与材料成本之间的关系，钯金属层可以接合并形成在薄片(tab)上。
下面详细地说明本申请中介绍的发明。
本申请的发明人反复研究以发现线断开的原因并重新确定了产生的原因。通过本发明人的分析，现已发现焊丝中引线侧断开变差可分为“模塑后焊丝断开变差”和“回流后引线接合部分断开变差”。首先，可以认为模塑后焊丝断开变差是由引线的振动产生的应力和树脂硬化和收缩产生的应力造成的。如图1所示，当从入口33填充树脂时(填充时间为10秒钟)，内引线4的前端部由于树脂流垂直地振动。由于振动应力施加到焊丝19，特别是振动应力趋于施加到入口部分附近的管脚。此外，由于树脂从远离入口33的位置朝入口33(图中的从左到右)硬化和收缩，估计张力施加到焊丝19，从具有较弱粘结强度的引线侧粘合部分产生焊丝断开。
接下来，估计是由于引线框架的膨胀36和树脂的膨胀35之间的差异产生回流后引线接合部分断开变差。图2为以上介绍情况的示意图。树脂硬化材料的物理性质在树脂的玻璃转化点Tg(150到160℃)变化很大，特别是在等于或大于Tg的区域(α2)中热膨胀系数α(=1.4)变成约四到五倍等于或小于Tg的区域(α1)中的值。由于回流时的温度高于Tg的温度，由于回流时树脂的膨胀(α2)，焊丝19受到损伤，在具有较小强度的部分产生裂纹37(图2中的A部分)，由于引线框架的膨胀36和树脂的膨胀35之间的差异产生断开，如图3所示。
由于使用无Pb焊料的原因使用由高熔点的Sn基合金制成的替代焊料增加了回流温度，因此施加到封装的卡路里增加，特别是引线框架的膨胀和树脂的膨胀之间的差异增大。因此，现已发现在以上提到的焊丝断开变差之中回流后引线侧接合部分断开变差特别成问题。
此时，本申请的发明人研究了Ag电镀的厚度和焊丝断开之间的关系。由此，现已明确当电镀的厚度变为预定的厚度范围时容易产生焊丝断开。分析其原因，认为以太薄的电镀厚度粘合Au焊丝时不能充分地保障Ag和Au之间连接表面的区域，由此由于热应力造成的焊丝变形产生焊丝断开。此外，当使Ag电镀的厚度大于某个厚度时，在等于或大于必要值的程度Ag电镀表面变形以吸收键合能量。由此，认为不可能得到充分的键合，键合表面的截面形状变成相对于Au焊丝的热变形产生的张力变弱的形状。
此外，下面从形状的角度介绍回流后引线接合部分断开变差。图4为焊丝19通过毛细管20粘合到Ag点电镀表面时的截面图。图4中的阴影部分对应于毛细管20的前端，前端的直径为170μm,Au焊丝19的直径为30μm。在图中，引线框架7的厚度为150μm。如上所述，由于对于每个要Ag电镀的引线框架，Ag镀层38的厚度分布在约1.5μm和10μm之间的范围内，因此很难定义Ag电镀的定义。因此，在图中，假定产生断开变差的电镀厚度较厚。
当接合线时，由于Ag为较软的金属，毛细管20深入到Ag镀层38的表面内，Ag电镀38的部分表面如图4所示鼓起。然后，图4中参考符号A所表示的部分中的Au焊丝19的厚度变得较薄，由此产生具有较弱线强度的部分。图5为键合后引线侧粘合部分的透视图。在图5中，由图5中线A表示的部分对应于图4中的A部分。回流之后，由于引线框架的膨胀和树脂的膨胀之间的差异，在图6中所示的图4中的部分处产生焊丝断开。作为参考，图7为模塑后焊丝断开变差的引线侧接合部分的透视图。产生回流后引线侧接合部分中断开变差，由此断开的焊丝与接合部分交叠，然而，产生模塑后引线侧接合部分中焊丝断开变差，由此断开的焊丝与接合部分分离。如上所述，在本申请发明人分析的基础上显然由于毛细管20深入具有较大厚度的Ag镀层表面内由此产生具有较弱线强度的部分的原因产生焊丝断开。
近些年来，设计上要求的Ag镀层的厚度变薄到几μm。通过研究Ag镀层表面的厚度分布，现已知在目前的Ag电镀工艺中，处理很多要电镀的主体时，很难保持初始设置的电镀厚度，对于每个要电镀的主体，电镀厚度分布在1.5μm和10μm之间的范围。因此，为了限制每个引线框架Ag镀层的厚度分布，本申请的发明人已尝试使最大厚度位于5和8μm之间的范围内，而不是常规的10μm。然而，在目前的Ag电镀工艺中，以上提到的最大厚度10μm为极限值，很难将最大厚度设置在5和8μm之间。因此，可以认为在目前的Ag电镀工艺中很难使电镀厚度的分布小于目前的水平。
然而，为了解决以上提到的产生焊丝强度变弱部分的问题，本发明可通过以下方式获得：使用比Ag硬并且厚度分布较小的金属作为金属层接合并形成在内引线的前端部并研究和考虑以使用合适的金属制造成本最低的产品。
接下来，介绍钯金属层如上所述接合并形成在内引线的前端部的原因，由此从引线侧粘合部分的形状的角度可以防止回流后引线侧接合部分的断开。
图8为焊丝19通过毛细管20接合到Pd镀层10表面的剖面图。介绍了一个实施例，其中图8中的阴影部分为毛细管20的前端部，前端的直径为170μm,Au线19的直径为30μm。当接合焊丝19时，由于Pd为较硬的金属，与电镀表面为Ag的情况相比，毛细管20没有深入那么多。因此，与图4中的部分A相比，图8中部分A的Au焊丝19的厚度t可以确保到足够的厚度，由此可以保持线强度。图9为键合后引线侧粘合部分的透视图。图9中线A表示的部分对应于图8中的部分A。现已知与图5中的相比，可以确保图9中的Au焊丝厚度。回流之后，由于引线框架的膨胀和树脂膨胀之间的差异造成应力沿图9中的箭头方向施加。然而，由于没有强度变弱的部分，因此没有产生断开，即断开的焊丝与Ag镀层部分产生的粘合部分重叠。当设置毛细管20的接合力以确保引线框架7的厚度为150μm时Au焊丝的厚度t为10μm以上，至少不产生线断开，Pd镀层10的厚度最小为0.02μm，最大为0.15μm。
接下来，介绍本发明将Pd金属层接合和形成到要连接的部件的技术思想能被应用到缩短连接部件的技术而与无Pb无关的原因。
作为估算本申请代表性发明中各条件的结果，应注意到该估算是在假定封装尺寸没有改变的前提下作出的。此时，如上所述由引线框架的膨胀和树脂膨胀之间的差异造成焊丝断开。因此，可以认为当随着多管脚封装变大时，以上提到的膨胀差异变得更突出。由于容量增加，卡路里变大，由此回流时施加到树脂上的卡路里增加。此外，由于多管脚，回流时从衬底流出穿过管脚的卡路里也增加。
此外，即使由于芯片缩小缩短了间距，与具有相同尺寸的封装相比，仍有很多卡路里施加到封装。因此，即使是具有相同数量管脚的封装，由于芯片缩小封装尺寸变小，焊丝键合的焊盘间距随之缩小，焊丝直径变小。随着芯片收缩引起的线缩短，即，随着目前的线直径30μm进一步变窄，必须考虑使电镀厚度变薄。由于考虑到在目前的Ag点电镀工艺中能够实现的范围内的电镀厚度的分布在将来会太大，所以键合操作变得不稳定。
也就是说，即使回流温度不改变但由于随着多芯片和芯片缩小而间距缩小所以施加到封装的卡路里增加的情况对应于回流温度的增加。因此，由于可以减小金属厚度的分布并增加键合强度，而与无Pb没有直接的关系，所以可以采用将Pd金属层接合并形成到要连接的部件的技术想法。
此时，虽然该技术想法与本申请中介绍的发明完全不同，但有一种预焊料电镀的引线框架(PPL)工艺作为可以实现无Pb的处理方法。PPL工艺是一种在模塑之前将具有良好粘结性能的钯金属电镀在包括管芯粘结部分内引线和外引线的整个引线框架上的工艺。由于在电镀中使用的金属为钯，因此PPL工艺可以制得无Pb。此外，在PPL工艺中，由于不要求通常模塑之后进行的外部电镀工艺，因此可以缩短装配时间，并且由于省略了外引线的焊料电镀使整个装配工艺自动化。
然而，由于框部件的材料和Pd材料之间的电位差形成局部电池，因此存在产生腐蚀的危险，由此如42合金(42Ni-Fe)金属等的Fe系列框不能用做框部件，框局限为铜合金。此时，通过在框和Pd金属层之间插入阻挡金属可以使用Fe系列框，然而，由于在实际的装配工艺中切割阻挡条和引线的前端时截面中的材料露出，材料腐蚀从截面同心地集中地加速，由于考虑到制造成本制造工艺的复杂性，所述Fe系列框变得不利，所以该结构不合适。此外，由于由框状态进行外引线的电镀，外引线表面被污染，并且在除去非常有可能模塑产生的树脂毛刺等的毛刺除去操作中，安装衬底时焊料的润湿性变差。此外，由于与铅系列焊料相比钯为硬金属，因此产生如果电镀后形成外引线电镀剥离的问题。
因此，即使使用以上提到的Pd电镀工艺作为实现本发明目的即防止线断开的方式，基本上可以使每个要电镀的主体的电镀厚度差异变小，然而，由于存在以上提到的不足，毫无疑问该方式不是解决问题的合适方式。
此外，本申请的发明人在申请本申请之前从“引线框架上镀Pd”的角度检索了现有技术。结果在日本待审专利公开No.11-40723(U.S.P.No.5,889,317)(现有技术3)和11-220084(现有技术4)中，提出了通过Pd系列金属电镀包括至少外引线的部分或整个引线的发明。此外，作为主要从不需要外部电镀工艺和整个装配工艺自动化的角度通过Pd系列金属电镀整个引线的发明，有日本待审专利公开No.10-284666(现有技术5)、10-298798(现有技术6)和10-18056(现有技术7)，从进一步将Au-Ag合金电镀到Pd系列金属层最外表面上的角度，有日本待审专利公开No.11-8341(现有技术8)。
图1为模塑之后产生焊丝连接变差的结构示意图；
图2为回流之后在引线侧粘合部分中产生裂纹的结构示意图；
图3为回流后在引线侧粘合部分中产生焊丝断开的示意图；
图4为粘合焊丝时焊丝键合到Ag电镀表面上的放大图；
图5为焊丝键合到Ag电镀表面上的线粘合部分的放大图；
图6为回流Ag电镀后线断开的示意图；
图7为Ag电镀的树脂硬化并收缩之后线断开的示意图；
图8为粘合线时焊丝键合到Pd电镀表面上的放大图；
图9为焊丝键合到Pd电镀表面上的焊丝粘合部分的透视图；
图10为根据本发明的一个实施例的引线框架的平面图；
图11为根据本发明的一个实施例的引线框架的放大平面图；
图12为沿图11的线A-B的剖面图；
图13为内引线前端中Pd电镀的详细剖面图；
图14为根据本发明使用框架的管芯粘结工艺中施加粘合剂材料的示意图；
图15为根据本发明使用框架的管芯粘结工艺中安装芯片的示意图；
图16为根据本发明使用框架的焊丝键合工艺的示意图；
图17为根据本发明使用框架的管芯粘结工艺中Pd电镀部分的放大图；
图18为焊丝键合到Pd电镀表面上时Au焊丝粘合部分形状的示意图；
图19为焊丝键合到Pd电镀表面上粘合部分的透视图；
图20为完成焊丝键合之后根据本发明的一个实施例引线框架的放大平面图；
图21为根据本发明使用框架的树脂模塑的剖面图；
图22为根据本发明使用框架电镀外引线之后的剖面图；
图23为根据本发明使用框架弯曲工艺的示意图；
图24为根据本发明使用框架引线前端对准工艺的示意图；
图25为根据本发明使用框架封装的完成产品的俯视正面图；
图26为根据本发明使用框架沿封装的完成产品的线E-F的剖面图；
图27为根据本发明使用框架封装的完成产品的透视图；
图28为根据本发明的封装安装在衬底上的结构示意图；
图29为根据本发明的封装安装之后安装衬底的俯视正面图；
图30为风扇内置型CSP的周边焊盘结构的示意性剖面图。
下面参考附图详细地介绍根据本发明的一个实施例。此时，在介绍实施例的所有附图中相同的参考数字表示具有相同功能的元件，并且省略了重复的说明。
根据本发明的半导体集成电路器件为内引线的前端部为点镀钯并且外引线为Sn-Ag系列合金电镀的半导体集成电路器件。
在本实施例中，以具有208个管脚和封装尺寸为28mm见方的结构为例说明。
在半导体集成电路器件中使用的引线框架的四个重复单元图示在图10中。当然重复单元的数量不限于四个。此外，在本实施例中材料为Cu合金，然而也可以是如42Ni-Fe等的铁系列引线框架。在本实施例中，由于钯电镀没有施加到整个表面上，因此不会产生在钯整个表面电镀中外引线中的局部电池的问题。
图11为钯电镀1施加到内引线4的前端部的一个引线框架7的放大图。薄片(管芯垫)2是所谓的小薄片，将芯片安装表面的面积设置得小于安装于其上的半导体芯片的主表面的面积。通过使用小薄片，可以预先防止产生回流裂纹的危险。根据本实施例，薄片为小薄片，然而也可以为交叉的薄片型(仅有悬挂引线3宽度的类型)，也可以是通常的薄片。此外，根据本实施例，钯电镀没有施加到管芯垫2，然而，钯电镀可以施加到管芯垫2。
图12为沿图11所示的引线框架7放大图的线A-B的剖面图。钯电镀1施加到引线的前端部。将要钯电镀的部分可以构成为使得焊丝键合部分具有要点镀的最小尺寸。电镀时，根据电解电镀通过掩蔽除引线框架7的背面和引线的前端部之外的其它部分进行电镀。因此，除了在下述最小量所需的内引线前端部的表面上电镀之外，电镀也施加在厚度方向上。下面以使用具有30μm的焊丝直径的Au焊丝19相对于电镀所需的最小面积进行焊丝键合的情况为例进行说明，点镀所需的最小面积21约为图19所示由粘合宽度a和粘合长度b表示的线粘合部分a×b面积的75％。根据本实施例，值a和b都设置为至少90μm，设置所需的最小面积21的位置以便它的中心设置在距引线框架的前端300μm处。
此外，通过变形悬挂引线3将管芯衬垫2设置在内引线4的表面之下进行所谓的薄片下沉。这是由于可以防止填充树脂时芯片的上和下部分之间树脂填充速度的差异。
图13示出了根据本实施例内引线的前端部中钯电镀的结构。钯电镀由三层构成，Ni电镀11首先施加到内引线4作为底电镀，钯电镀10施加于其上，最后施加Au薄镀9以提高耐腐蚀性。设置根据本实施例各层的具体厚度以便内引线的厚度为150μm,Ni电镀的厚度为1.0μm，钯电镀的厚度为0.15μm,Au薄镀的厚度约为1nm。
下面参考图14介绍管芯粘结工艺。图14为沿图11中线C-D的剖面图。下沉薄片之后的引线框架7安装在工作台16上，并与管芯衬垫2的下表面接触。通过设置具有用于容纳管芯衬垫上粘结材料15的注射器12的分配器，用于管芯粘结的粘结材料15粘合到管芯衬垫的上表面上。此时，粘结材料15使用用于具有小消耗功率的半导体器件的导电膏(含有Ag粉和碳的有机树脂)。除了良好的透热性之外，管芯粘结材料需要的特性为相对于半导体器件和引线框架7的涂覆膜的焊料润湿性、由于使用半导体器件时和不使用半导体器件时之间的温度差异焊料的热疲劳性能等。考虑到以上因素，导电膏很有效。此外，由于本发明的目的是减少Pb，因此不使用主要由Pb组成通常在功率器件中使用的金属焊料。然而，这不意味着没有金属焊料可以使用，可以使用无Pb焊料。为此，在不考虑无Pb的另一代表性发明中，当然可以使用主要由Pb组成的金属焊料。下一步骤参考图15。通过夹头17将半导体芯片18移动到粘结材料15粘合的引线框架上之后，芯片粘合到芯片粘合位置。夹头17的截面形状为图15所示的四角锥形，夹头17和半导体芯片18由于负压吸引紧密地固定于夹头17。
下面参考图16介绍焊丝键合工艺。管芯粘结工艺之后，芯片18的下表面和内引线4的下表面固定到工作台16。如凹槽等接收管芯衬垫2的部分预先形成在工作台16中。固定之后，毛细管20从芯片18上的焊盘键合到内引线4。图17为焊丝键合部分的放大图。图18为焊丝键合之后粘合部分的形状示意图。在本发明中，焊丝直径d为30μm，粘合宽度W最大105μm，粘合长度最大105μm。从本发明人进行的研究结果显然看出通过设置L、W和d的关系满足公式1.5≤W/d≤3.5和1.5≤L/d≤3.5可以得到良好的粘合状态。
完成以上提到的焊丝键合工艺之后得到的引线框架7显示在图20中，接下来在模塑工艺中进行树脂模塑。在模塑工艺中，引线框架7固定在模塑金属模具22之间，从树脂填充口23灌注树脂24。在本实施例中，构成灌注时间以使填充时间变为10秒。灌注时，有必要在引线框架2的上和下部分之间以相同的速度灌注树脂。这是由于模塑时引线框架7的振动宽度设置的尽可能地小，施加到焊丝19的应力减小以防止线断开。
图22示出了树脂模塑之后外部电镀施加到外引线5并且完成外部电镀之后的状态。在本实施例中外部电镀使用的金属为通过将Cu和/或Bi添加到Sn-Ag系列金属得到的合金。这是由于可以实现减少Pb并且并假定具有高回流温度的回流安装。因此，除了以上提到的合金之外，当然可以使用Zn、In、Sb和Sn之中的合金或Sn系列合金。当回流安装时，粘结糊状钎料包括具有不同安装温度的结构，例如，Sn-Ag系列、Sn-Zn系列、Sn-Bi系列等。在目前的状态中，Sn-Ag系列金属的熔点高于含Pb焊料的熔点。然而，在其它实施例中，外部电镀使用铅系列焊料。这是由于当注意到通过向内引线4施加钯镀层增加了内引线4和焊丝19之间的粘结强度的事实时，不需要将外部电镀局限为铅系列焊料。
完成外部电镀之后，为形成外部引线5的工艺。首先，如图23所示，树脂模塑体保持并固定在外引线5的根部，并通过冲压机25使外引线5成形。成形之后，通过图24中所示从下部移动冲模26切割和成形外引线5的前端部。
图25示出了本实施例中完成的产品示意图，图27为示意图的透视图，图26为沿图27中线E-F的截面图。管脚数为208，然而，在图中示出的管脚数量少以避免麻烦。通过斜切一个角并刻出标记得到树脂模塑体的形状，以确保安装处理时封装的方向性。对于本实施例中完成产品的具体尺寸，树脂模塑体的尺寸D为28mm见方，包括外引线5的半导体封装的外部尺寸为30.6±0.2mm，最大高度为3.56mm。此外，引线的间距p为0.5mm，每个引线的宽度w为0.2mm，厚度t为0.15mm，树脂模塑体和外引线前端之间水平方向中的长度为1.3mm，弯曲的外引线的前端长度k为0.5mm。
下面参考图28和29介绍安装在印刷电路板上的工艺。焊膏28施加到大于外引线5的前端安装表面的足迹29上。通过施加焊膏之后从上面安装封装31并施加热进行安装操作。回流法包括汽相回流、空气回流、红外线回流等。在实施例中，回流温度为255℃，比通常的Sn-Pb系列焊料的回流温度235℃高20℃。这是由于对应于焊料熔点高的事实。此外，对于印刷电路板30上足迹29的具体尺寸，宽度为0.20到0.25mm，长度b为1.3mm。
这是由于在尺寸的范围内，安装封装时产生的封装位置小量的偏移可以通过回流自对准，所以没有产生由安装位置的偏移引起的问题。
在以上提到的实施例中，介绍了用于制造QFP目的的本发明，然而，本发明也可以应用到表面安装型封装，例如QFN、QFJ等，并不局限于QFP，此外，本发明也可以应用到具有线连接部分的一般封装，例如，排列在芯片中间的焊盘通过焊丝连接到引线的小外廓无铅引线封装。此外，根据实施例，制造结构以提高对应于连接部件的线接合和连接到对应于要连接部件的内引线的部分的连接强度，然而，连接部件不限于焊丝，要连接的部件不限于引线。例如，本发明适用于将Pb镀层施加到对应于接合部分的焊盘40，并将对应于连接部件42的引线连接到芯片尺寸封装中的半导体芯片39的情况，在所述封装中使用如聚酰亚胺带43等的绝缘部件作为基底材料并通过焊料球安装在衬底上，如图30中的示意截面图所示。即，本发明通常适用于改进半导体器件中连接部分的连接特性和可靠性。
下面简要地介绍本申请公开的发明中代表性的发明得到的效果。
根据本发明，可以提供一种无铅LSI封装，具体地，适用熔点高于Pb系列焊料熔点的无铅替代焊料的LSI封装，可以提高组件成品率和可靠性。此外，可以提供一种由于封装中管脚增加或它的尺寸增加和芯片缩小引起线缩短的LSI封装，并且可以提高组件成品率和可靠性。

Claims (17)

1．一种半导体集成电路器件，包括：
具有导电性的连接部件；
在与所述连接部件连接的部分处提供有包括钯层的金属层的被连接部件；
模塑所述要连接部分的树脂；以及
电连接到所述被连接部件的部件，其在所述树脂外的部分提供有合金层，该合金层的熔点高于以Pb作为主要组成金属的焊料的熔点且其主要组成金属中不含Pb。
2．一种半导体集成电路器件，包括：
具有导电性的连接部件；
在与所述连接部件连接的部分处提供有包括钯层的金属层的被连接部件，其在树脂模塑部分外的部分提供有合金层，该合金层的熔点高于以Pb作为主要组成金属的焊料的熔点且其主要组成金属中不含Pb；以及
模塑所述被连接部分的树脂。
3．一种半导体集成电路器件，包括：
具有导电性的连接部件；
在与所述连接部件连接的部分处提供有包括钯层的金属层的被连接部件，其在树脂模塑部分外的部分提供有熔点高于Sn-Pb共晶焊料的熔点且主要组成金属中不含Pb和Pd的金属层；以及
模塑所述被连接部分的树脂。
4．一种半导体集成电路器件，包括：
具有导电性的连接部件；
在与所述连接部件连接的部分处提供有包括钯层的金属层的被连接部件，其在树脂模塑部分外的部分提供有熔点高于Sn-Pb共晶焊料的熔点且主要组成金属中不含Pd的无Pb金属层；以及
模塑所述被连接部分的树脂。
5．一种半导体集成电路器件，包括：
半导体芯片；
连接到所述半导体芯片并具有导电性的连接部件；
在与所述连接部件连接的部分处提供有包括钯层的金属层的被连接部件，其在其他部分中提供有熔点高于Sn-Pb共晶焊料的熔点且主要组成金属中不含Pd的无Pb金属层；以及
模塑连接到所述连接部分的部分所述半导体芯片、所述连接部件和连接到所述连接部件的部分所述被连接部分的树脂。
6．一种半导体集成电路器件，包括：
半导体芯片；
键合到所述半导体芯片的焊丝；
在与所述焊丝键合的内引线的一部分上镀敷有包括钯层的金属层的引线，其在外引线被安装部分上镀敷有熔点高于Sn-Pb共晶焊料的熔点且主要组成金属中不含Pd的无Pb替代焊料；
模塑键合到所述焊丝的所述半导体芯片的键合部分、所述焊丝和所述引线的包括键合到所述焊丝的部分的内引线的树脂。
7．一种半导体集成电路器件，包括：
半导体芯片；
焊丝；
模塑所述半导体芯片和所述焊丝的树脂；以及
在所述树脂模塑部分的前端提供有包括钯层的金属层的引焊丝，其在所述树脂模塑部分外的部分中提供有熔点高于Sn-Pb共晶焊料的熔点且主要组成金属中不含Pd的无Pb金属层。
8．一种半导体集成电路器件，包括：
半导体芯片；
引线，其中内引线的前端镀钯，外引线镀无Pb焊料；
键合所述半导体芯片和所述引线的内引线的焊丝；
模塑所述半导体芯片、所述引线的内引线部分以及所述焊丝的树脂，
其中所述无Pb替代焊料的熔点高于Sn-Pb共晶焊料的熔点，并且所述无Pb替代焊料不是仅由Pd组成。
9．一种安装衬底，包括：
半导体集成电路器件，所述半导体集成电路器件配备有：具有导电性的连接部件；在与所述连接部件连接的部分处提供有包括钯层的金属层的被连接部件，其在树脂模塑部分外提供有主要组成金属中不含Pb的合金；以及模塑所述要连接部分的树脂；以及
印刷电路板；
其中通过熔点高于以Pb作为主要组成金属的焊料熔点的焊料将所述半导体集成电路器件连接到所述印刷电路板。
10．一种安装衬底，包括：
半导体集成电路器件，所述半导体集成电路器件配备有：具有导电性的连接部件；在与所述连接部件连接的部分处提供有包括钯层的金属层的被连接部件，其在树脂模塑部分外提供有主要组成金属中不含Pb的金属；以及模塑所述要连接部分的树脂；以及
通过熔点高于以Pb作为主要组成金属的焊料熔点的金属与所述半导体集成电路器件连接的印刷电路板。
11．一种安装衬底的制造方法，所述安装衬底包括：
半导体集成电路器件，所述半导体集成电路器件配备有：具有导电性的连接部件；在与所述连接部件连接的部分处提供有包括钯层的金属层的被连接部件，其在树脂模塑部分外提供有主要组成金属中不含Pb的合金层；以及模塑所述要连接部分的树脂；以及
印刷电路板；
其中所述方法具有使所述被连接部件的温度成为高于Sn-Pb共晶焊料熔点的工艺。
12．一种安装衬底的制造方法，所述安装衬底包括：
半导体集成电路器件，所述半导体集成电路器件配备有：具有导电性的连接部件；在与所述连接部件连接的部分处提供有包括钯层的金属层的被连接部件，其在树脂模塑部分外提供有主要组成金属中不含Pb的合金层；以及模塑所述要连接部分的树脂；以及
印刷电路板；
其中所述半导体集成电路器件和所述印刷电路板容纳在同一炉中，所述炉内的温度高于Sn-Pb共晶焊料的熔点。
13．一种安装衬底的制造方法，所述安装衬底包括：
半导体集成电路器件，所述半导体集成电路器件配备有：半导体芯片；钯金属镀在内引线的前端部而无Pb金属镀在外引线上的引线；键合所述半导体芯片和所述引线的焊丝，模塑所述半导体芯片的焊丝键合部分、所述引线的焊丝键合部分以及所述焊丝的树脂，其中所述无Pb替代焊料的熔点高于Sn-Pb共晶焊料的熔点，并且所述无Pb替代焊料不是仅由Pd组成；以及
印刷电路板；
其中所述半导体集成电路器件和所述印刷电路板容纳在回流炉内，回流炉的设置温度高于将Pb金属层提供在外引线中的半导体集成电路器件回流安装到衬底时的设置温度。
14．一种半导体集成电路器件，包括：
直径等于或小于30mm的焊丝；
在与所述焊丝连接的部分处提供有包括钯层的金属层的被连接部件，其在树脂模塑部分外的部分提供有以Pb作为主要组成金属的焊料；以及
模塑所述被连接部分的树脂。
15．一种安装衬底，包括：
半导体集成电路器件，所述半导体集成电路器件配备有：半导体芯片；Pd金属附着并形成到内引线的前端部而Pb焊料层附着并形成到外引线上的引线；键合所述半导体芯片和所述引线并具有30μm以下直径的焊丝；以及模塑所述半导体芯片的焊丝键合部分、所述引线的焊丝键合部分和所述焊丝的树脂；以及
印刷电路板。
16．一种半导体集成电路器件，包括：
具有导电性的连接部件；
在与所述连接部件接合的部分提供金属层的被连接部件；
模塑所述接合部分的树脂，
其中所述连接部件中接合部分的厚度等于或大于10μm。
17．多个半导体集成电路器件的制造方法，所述半导体集成电路器件包括：
具有导电性的连接部件；
树脂；以及
在与所述连接部件连接的部分中提供有第一金属层的被连接部件，其在所述树脂模塑部分外提供有与所述第一金属层不同的第二金属层，以及模塑所述要连接部分的树脂，
其中提供一种附着和形成金属层的工艺，所述金属层在第一半导体集成电路器件的第一金属层的厚度和第二半导体集成电路器件的第一金属层的厚度之间具备的差异小于10μm。
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CN103168392A (zh) * 2011-02-09 2013-06-19 株式会社村田制作所 连接结构
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US7397114B2 (en) 2008-07-08
US20030067067A1 (en) 2003-04-10
US20010015481A1 (en) 2001-08-23
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US20040245607A1 (en) 2004-12-09
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TW504827B (en) 2002-10-01
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