CN1366548A - Composition for use in polishing magnetic disk substrate and method for preparing same - Google Patents
Composition for use in polishing magnetic disk substrate and method for preparing same Download PDFInfo
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- CN1366548A CN1366548A CN 01800964 CN01800964A CN1366548A CN 1366548 A CN1366548 A CN 1366548A CN 01800964 CN01800964 CN 01800964 CN 01800964 A CN01800964 A CN 01800964A CN 1366548 A CN1366548 A CN 1366548A
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- polishing
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
A composition for use in polishing a magnetic disk substrate which comprises an aqueous medium containing an alkali metal ion, abrasive grains, a carboxylic acid, an oxidizing agent and an antigelling agent. The polishing of a substrate of a magnetic disk with the polishing composition provides a surface having a very small roughness and a magnetic disk using a substrate polished with the composition is useful as a low flying type hard disk and is capable of performing high density recording.
Description
Technical field
The present invention relates to the employed magnetic disc substrate of storing device such as computer produce in used composition for use in polishing, in more detail, relate to provide and be suitable for magnetic head with low floating composition for use in polishing magnetic disk substrate and the manufacture method thereof that goes up the height polishing precision magnetic disk surface of amount flight.
Background technology
In the external memory of computer or processor, just be extensive use of disk (storage hard disk) but the means of conduct high speed storing.The representative example of this disk is on the surface of aluminium alloy base plate, is substrate with the face of electroless plating NiP, this substrate is carried out surface finish after, form Cr alloy counterdie, Co alloy magnetic film, carbon protective film with the sputtering method order.
Yet, magnetic disk surface residual have magnetic head floating on during the projection of the above height of amount, the magnetic head of the floating top high-speed flight in height limit and its projection are collided the reason that becomes damage in accordance with regulations.In addition, when projection or polishing damage etc. are arranged on magnetic disc substrate, when forming Cr alloy counterdie and Co alloy magnetic film etc., projection appears in the surface at these films, and polishing damage can produce defective, magnetic disk surface can not become the high even surface of precision, in order to improve the precision of panel surface, is necessary precise polished substrate.
For this reason, aspect the polishing of magnetic disc substrate, do not produce thrust, again it highly reduced and proposed many schemes as the composition for use in polishing that is difficult to produce polishing damage.
Wherein, Japanese kokai publication hei 10-121035 communique discloses the use of adding the made composition of aluminum nitrate (polishing promotor) in titanium dioxide; The TiO 2 particles of above-mentioned communique Central Asia micro type is to use as abrasive particle.When this abrasive particle is used for the polishing of magnetic disc substrate, compared, reached high surface accuracy, polishing velocity easily with the past.But consider the hardness of this abrasive particle material, be difficult to reach the level of nearest desired surface accuracy at present.
In addition, Japanese kokai publication hei 9-204657 communique discloses and has added the use that aluminum nitrate, gelation prevent the made composition of agent in the colloidal silica, again, Japanese kokai publication hei 9-204658 communique discloses the use of adding the made composition of aluminum nitrate in pyrolytic silicon dioxide.The disclosed composition of these communiques because use the silicon-dioxide minuteness particle littler than hardness of the abrasive grain, obtains surface accuracy easily, but is difficult to reach spendable polishing velocity in the present actual production.
Moreover Japanese kokai publication hei 10-204416 communique has proposed to use respectively a large amount of oxygenants and Fe salt as the means that improve polishing velocity.Yet,, compare still not enough with the polishing velocity that present actual production can be used even like this.
Making high density magnetic recording become desired prerequisite in the possible aluminium composition for use in polishing magnetic disk substrate, is to make the formation that hanging down of magnetic head floated becomes possible high precision card.
Therefore, the object of the present invention is to provide the surface roughness of magnetic disc substrate little and do not produce projection and polishing damage, can realize high density recording, and can be with the composition for use in polishing and the manufacture method thereof of the magnetic disc substrate of the speed polishing of economy.
Disclosure of an invention
According to composition for use in polishing magnetic disk substrate of the present invention, it is characterized in that preventing that by alkali metal containing ion, abrasive particle, carboxylic acid, oxygenant, gelation the aqueous medium of agent from constituting.
The content of the abrasive particle in the above-mentioned aqueous medium is in the scope of 3～30 quality %, and the content of carboxylic acid is in the scope of 0.1～8.0 quality %, and the content of oxygenant is in the scope of 0.2～5.0 quality %, and pH is about 1～about 5.
The content of above-mentioned alkalimetal ion is the scope of 0.001～5.0 quality %, and alkalimetal ion is provided by alkali-metal oxyhydroxide.
Above-mentioned basic metal comprises lithium, sodium, potassium, rubidium or caesium.
And above-mentioned abrasive particle is aluminum oxide, titanium dioxide, silicon-dioxide or zirconium white, and the median size of the secondary particle of above-mentioned abrasive particle is the scope of 0.03～0.5 μ m.Above-mentioned again abrasive particle is the colloidal particle.
Above-mentioned carboxylic acid is at least a organic carboxyl acid that has COOH base or COO base in the molecule, comprises glyconic acid, lactic acid, tartrate, oxyacetic acid, R-Glyceric acid, oxysuccinic acid, citric acid, formic acid, acetate, propionic acid, vinylformic acid, oxalic acid, propanedioic acid, succsinic acid, hexanodioic acid, toxilic acid, methylene-succinic acid, glycine, Methionin, aspartic acid, L-glutamic acid.
Above-mentioned oxygenant comprises superoxide, persulphate, nitrate, oxysalt, molysite, and above-mentioned superoxide comprises hydrogen peroxide.
Again, gelation prevents that agent from comprising phosphonic acids compounds, phenanthroline or aluminium acetylacetonate salt, and above-mentioned phosphonic acids compounds comprises phosphoric acid, 1-hydroxyl ethane-1,1-di 2 ethylhexyl phosphonic acid or Amino Trimethylene Phosphonic Acid (aminotrimethylene phosphonic acid).
In addition, according to the production method of composition for use in polishing magnetic disk substrate of the present invention, it is characterized in that adding potassium hydroxide in containing the aqueous medium that abrasive particle, carboxylic acid, oxygenant, gelation prevent agent, it is about 1～about 5 that this aqueous medium is adjusted to pH.
As the composition for use in polishing of above-mentioned adjusting, by in the polishing of magnetic disc substrate, using, make surfaceness very little, adopt the hard disk use of the low floating mo(u)ld top half of disk conduct of polishing disk, can realize high density recording.
The preferred plan that carries out an invention
The present inventor is to realizing the low floating result that amount type aluminium disk requires the rumbling compound of high precision polished surface to concentrate on studies that goes up, and found the composition for use in polishing to the polishing demonstration excellent properties of the aluminium disk that is applied with Ni-P coating, thereby finished the present invention.
Composition for use in polishing of the present invention is to prevent that to contain alkalimetal ion, abrasive particle, carboxylic acid, oxygenant, gelation in the aqueous medium agent from being the composition for use in polishing of feature, and it is desirable in the said composition with the alkali metal containing ion is feature in the scope of 0.001～5.0 quality %.
In addition, the invention still further relates to the production method of composition for use in polishing, it is characterized in that in its working system preferably using alkali-metal oxyhydroxide, add this oxyhydroxide, make and contain dispersive abrasive particle, carboxylic acid, oxygenant, gelation in the aqueous medium and prevent agent as the alkalimetal ion source.
In addition, except that adding alkali-metal oxyhydroxide, alkalimetal ion also can be supplied with by the oxygenant that contains carboxylic acid or alkalimetal ion, and the especially interpolation of potassium ion particularly by the interpolation of potassium hydroxide, can effectively suppress slight abrasive generation.
Relevant composition for use in polishing of the present invention, the addition of alkalimetal ion is 0.001～5.0 quality % as described above, better be 0.01～3.0 quality %, be more preferably the scope of 0.05～1.0 quality %, when the addition of alkalimetal ion is lower than 0.001 quality %, can't embodies and suppress slight abrasive effect.And when 5.0 quality % were above, the reduction of polishing velocity became problem.
In the composition for use in polishing of the present invention, the abrasive particle contained as polishing material do not have particular restriction, for example can use aluminum oxide, titanium dioxide, silicon-dioxide, zirconium white etc.In addition, the crystal habit of these abrasive particles does not have particular restriction.For example, as crystal type, aluminum oxide has α type, γ type, δ type, η type, θ type, κ type, χ type etc., titanium dioxide (titanium oxide) crystal type has rutile-type, Detitanium-ore-type, brookite type etc., silicon-dioxide (silicon oxide) has colloidal silica, pyrogenic silica, white carbon(ink) etc., zirconium white has oblique system, tetragonal spheroidal, amorphousness etc., all can use preferably.
The median size of the secondary particle of aforementioned abrasive particle, the scope of 0.03～0.5 μ m normally, the scope of 0.04～0.2 μ m preferably, again, if the colloidal particle is then better.As above-mentioned, when abrasive particle uses the material of colloidal particle, verification the verifying results significantly.But the mechanism of relevant its effect is still not fully aware of, and estimation is to add alkalimetal ion in right amount to add alkali-metal oxyhydroxide especially in right amount, the result who improves as the dispersion state of polishing composition.
Here, the median size of secondary particle is fit to adopt the value of laser Doppler frequencies analysis formula particle size distribution device マ ィ Network ロ ト ラ ッ Network (Microtrack) UPA 150 (Honeywell corporate systems) mensuration.
When the secondary particle diameter of abrasive particle increases,,, become the reason that produces polishing damage because the probability that exists of coarse particle increases though the gelation of pore, cohesion suppress easily.And secondary particle diameter causes aforesaid gelation, cohesion when diminishing easily, becomes the reason that produces polishing damage.Therefore, in the composition for use in polishing of the present invention, as polishing material, the median size of the secondary particle when for example using silicon-dioxide better is the scope of 0.03～0.5 μ m, is more preferably 0.04～0.2 μ m.
In the composition for use in polishing of the present invention contained carboxylic acid be have in the molecule at least one-COOH base or-COO
-All known organic carboxyl acids of functional group of base for example it is desirable to contain at least a carboxylic acid of selecting arbitrarily in the poly carboxylic acid by the low molecule of glyconic acid, lactic acid, tartrate, oxyacetic acid, R-Glyceric acid, oxysuccinic acid, citric acid, formic acid, acetate, propionic acid, vinylformic acid, oxalic acid, propanedioic acid, succsinic acid, hexanodioic acid, toxilic acid, methylene-succinic acid, glycine, Methionin, aspartic acid, L-glutamic acid etc. or polyacrylic acid, polymethyl acrylic acid etc.Preferably contain polycarboxylic acid in the composition for use in polishing of the present invention, be more preferably oxalic acid, oxysuccinic acid.
In the aforementioned carboxylic acid molecules-COO
-Base is owing to the part disassociation of-COOH base or the disassociation of carboxy acid alkali's metal-salt exist.
The effect of carboxylic acid in the relevant composition for use in polishing can't get across clearly, and consideration is the corrosive effect that helps conduct acid in the polishing action, and polycarboxylic acid also plays the sequestrant effect.
In addition, in the composition for use in polishing of the present invention, except that aforementioned carboxylic acid, also can contain C
1～C
10Straight chain shape or catenate organic sulfonic acid, for example can enumerate methylsulfonic acid, ethyl sulfonic acid, propanesulfonic acid, fourth sulfonic acid, Phenylsulfonic acid, toluenesulphonic acids.The content of the organic sulfonic acid in this composition for use in polishing is suitable for the content of carboxylic acid.
Composition for use in polishing of the present invention, the scope of pH better be about 1～about 5, be more preferably about 2～about 4, and be well about 2～about 3 again.Here, the scope of " pact " of pH value refers to ± 10% scope.Be under the tart situation with the fluidity, promoting the oxidation of Ni, can improve polishing velocity, but pH also there are the problems such as corrosion of device when too low, so pH is more preferably 2～3.PH adjusts can use potassium hydroxide.
When the concentration of the abrasive particle in the composition for use in polishing of the present invention was lower than 3.0 quality %, polishing velocity obviously reduced.In addition, accelerate, when surpassing 30 quality %, not only can not see the rising of polishing velocity though polishing velocity increases with concentration, and the gelation especially easily of colloidal particle.If the consideration economy is the upper limit with 30 quality % in the practicality.Therefore, better be the scope of 3～30 quality % as concentration in the composition of abrasive particle, be more preferably 5～15 quality %.
The amount of the carboxylic acid that uses in the composition for use in polishing of the present invention better is 0.1～8.0 quality %, is more preferably 0.5～5.0 quality %.When the addition of carboxylic acid was lower than 0.1 quality %, the polishing facilitation effect reduced.And the addition of carboxylic acid can not strengthen polishing promoted effect when surpassing 8 quality % yet.
(for example, hydrogen peroxide) addition better is 0.2～5.0 quality % to used oxygenant in the composition for use in polishing of the present invention, is more preferably 0.5～3.0 quality %.When the addition of hydrogen peroxide is lower than 0.2 quality %, polishes promoted effect and reduce.And the addition of hydrogen peroxide can not strengthen polishing promoted effect when surpassing 5.0 quality % yet.
It is at least a by what select in phosphonic acids compounds, phenanthroline and the aluminium acetylacetonate salt that the gelation that the present invention uses prevents that agent from it is desirable to.Particularly,, for example can enumerate phosphoric acid, 1-hydroxyl ethane-1,1-bisphosphate (C as phosphonic acids compounds
2H
6O
7P
2) or Amino Trimethylene Phosphonic Acid (C
2H
12O
9P
3N).Can enumerate 1 as phenanthroline, 10-phenanthroline monohydrate (C
12H
8N
2H
2O), can enumerate the aluminium complexing salt (Al of methyl ethyl diketone as aluminium acetylacetonate salt
2[CH (COCH
3)
3]), these preferably press 2 quality % with interior interpolation.
Moreover the concentration when each above-mentioned constituent concentration is the polishing magnetic disc substrate is produced composition for use in polishing, when transporting, be made the composition higher than above-mentioned concentration, and redilution uses just effective during use to above-mentioned concentration.
The composition for use in polishing of magnetic disc substrate of the present invention except that aforementioned each composition, also can add tensio-active agent and sanitas etc.But must its kind of careful attention and addition can not cause gelation.
Composition for use in polishing of the present invention and existing composition for use in polishing are that abrasive particle is suspended in the water as medium equally, for example, can prevent agent etc. by carboxylic acid, hydrogen peroxide, the gelation of adding oxalic acid etc. therein, regulate pH and prepare with potassium hydroxide.During use, the composition that is mixed with whole compositions can be diluted the back and use.But also can added ingredients be divided into 2 groups in advance, for example be divided into the aqueous medium that contains abrasive particle, carboxylic acid, potassium hydroxide and contain the aqueous medium that hydrogen peroxide, gelation prevent agent, employing is carried out the blended method with these 2 groups.
Composition for use in polishing of the present invention can be used for effectively, and the substrate that for example utilizes the magnetic head of magnetic resistance (MR) effect to use with the high record density of disk representative (has 3Gbit/inch usually,
2Above recording density), but considers, also can use effectively having the disk that is lower than this recording density from the viewpoint that improves reliability.
Use the magnetic hard disk substrate of composition for use in polishing of the present invention not have particular restriction, but aluminium base (comprising alloy), when especially for example the aluminium base of electroless plating NiP uses composition of the present invention, can advantageously obtain high-quality polished surface industrial.
Finishing method generally is to use in the polishing block of pulpous state polishing material and magnetic disc substrate surface break-in, and the method that the slurry limit makes polishing block or substrate rotation is supplied with on the limit between polishing block and substrate.
With the disk of the substrate manufacture of composition for use in polishing of the present invention polishing, small protruding, small fine defective generation frequency such as recessed is very low, and surfaceness (Ra) is 2～3 positions, and smoothness is very good.
Below, specifically describe with regard to embodiments of the invention, but the present invention is not limited to these
Embodiment.
Embodiment 1～14,20～22
In the ratio shown in the table 2, in the colloidal silica (サ ィ ト Application HT-50F) of E.I.Du Pont Company's system, interpolation water, carboxylic acid, oxygenant, gelation prevent agent, alkali-metal oxyhydroxide, prepare 17 kinds the water-based polished composition of using, polish with burnishing device and the polishing condition shown in following.Alkali-metal oxyhydroxide potassium hydroxide, lithium hydroxide, sodium hydroxide, rubidium hydroxide.It is the results are shown in table 2, and the addition of alkali metal hydroxide is represented with alkali metal ion content measured in the table 2.And gel prevents that the HEDP of agent from being 1-hydroxyl ethane-1, the 1-di 2 ethylhexyl phosphonic acid.
And abrasive particle and the feature thereof used in embodiment, the comparative example are shown in table 1.
The particle diameter of abrasive particle is measured with laser Doppler frequencies analysis formula particle size distribution device Microtrack UPA 150 (Honeywell corporate systems).Its particle size measurement value is shown in table 1.The pH of composition makes made D-13 glass electrode formula pH meter with the hole field and measures.
Table 1
Embodiment 15,16
| Abrasive particle (abbreviation in the table 2) | Trade(brand)name | Secondary particle diameter (μ m) |
| Silicon-dioxide is (SiO 1. 21.) 2. (SiO of silicon-dioxide 22.) 3. (SiO of silicon-dioxide 2③) | サィトン?HT-50 ?E-150J ?AEROS?IL50 | ??0.05 ??0.1 ??0.1 |
| Titanium dioxide is (TiO 1. 21.) 2. (TiO of titanium dioxide 22.) alumina zirconia | ?F-2 ?F-4 | ??0.3 ??0.2 ??0.2 ??0.2 |
At first use the medium stirring mill machine, the white carbon(ink) (E-150J) of Japanese silicon-dioxide industrial system and the pyrogenic silica (AEROSIL-50) of Japanese Aerosil corporate system are pulverized, remove coarse particle, the median size that obtains secondary particle is the silicon-dioxide of 0.1 μ m.Then, prevent agent, potassium hydroxide, prepare the various water-based polished compositions of using, polish with burnishing device and the polishing condition shown in following in the interpolation of the ratio shown in the table 2 water, carboxylic acid, oxygenant, gelation.It is the results are shown in table 2.
Embodiment 17～19
Pulverize titanium dioxide (super titanium dioxide F-4), aluminum oxide, zirconium white clear and titanium company ( ィ ニ ゥ system) system with the medium stirring mill machine, remove coarse particle, the median size that obtains secondary particle is the titanium dioxide of 0.2 μ m.Prevent agent, potassium hydroxide in the interpolation of the ratio shown in the table 2 water, carboxylic acid, oxygenant, gelation then, prepare the various water-based polished compositions of using, polish with burnishing device and the polishing condition shown in following.It is the results are shown in table 2.
(polishing condition)
Substrate uses the aluminium dish of 3.5 inches sizes of electroless plating NiP.
(burnishing device and polishing condition)
The polishing trier ... four different rail formula two sides polishing machines
Polishing block ... matte type (POLYTEX DG, ロ デ-Le system)
Following price fixing speed of rotation ... 60rpm
The slurries feed speed ... 50ml/min
Polishing time ... 5min
As worker's pressure ... 50g/cm
2
(evaluation of polishing characteristic)
Polishing speed ... reduce conversion by the weight before and after the polishing of aluminium dish
Surfaceness ... use リ ス テ ッ プ, リ デ- 2000 (ラ Application Network テ-ラ-ホ Block ソ Application corporate system)
The degree of depth of polishing damage is resolved shape with the 3 dimension models of contact pin type surface resolver P-12 (TENCOR corporate system) and is tried to achieve the degree of depth.
The evaluation result of polishing characteristic is shown in table 2.Polishing damage A in the table 2 is that the polishing damage degree of depth is below 2nm.Polishing damage B is that the polishing damage degree of depth is 2～10nm.10nm is big for the polishing damage depth ratio, does not all occur in embodiment, comparative example.(comparative example 1,2)
In the ratio shown in the table 2, in the colloidal silica (サ ィ ト Application HT-50F) of E.I.Du Pont Company's system, add water, aluminum nitrate, hydrogen peroxide, prepare the water-based polished composition of using, polish with embodiment the samely.It is the results are shown in table 2.(comparative example 3)
Pulverize titanium dioxide (super titanium dioxide F-2) clear and the titanium corporate system with the medium stirring mill machine, remove coarse particle, the median size that obtains secondary particle is the titanium dioxide of 0.3 μ m.Then,, add water, aluminum nitrate, prepare the water-based polished composition of using, similarly polish with embodiment in the ratio shown in the table 2.It is the results are shown in table 2.(comparative example 4)
Pulverize titanium dioxide (super titanium dioxide F-4) clear and the titanium corporate system with the medium stirring mill machine, remove coarse particle, the median size that obtains secondary particle is the titanium dioxide of 0.2 μ m.Then, add water, aluminum nitrate, prepare the water-based polished composition of using, similarly polish with embodiment in the ratio shown in the table 2.It is the results are shown in table 2.
Table 2
| Abrasive particle (polishing material) | Carboxylic acid | Oxygenant | Gelation prevents agent | Alkalimetal ion | pH | Polishing velocity (μ m/min.) | Surfaceness (Ra) (nm) | Polishing damage | Projection | ||
| Kind, addition (quality %) | Kind, addition (quality %) | Kind, addition (quality %) | Kind, addition (quality %) | Add ion | Addition (quality %) | ||||||
| 7 " 8 " 9 " 10 " 11, embodiment 1 " 2 " 3 " 4 " 5 " 6 " | Silica is 10 " 10 " 10,10 " 10 " 10 " 10 ", 5 " 10 " 15 " 10 " 1. | Oxalic acid 1.0 " 1.0 " 1.0 " 0.5 " 4.0 " 1.0 " 1.0 " 1.0 " 1.0 malic acid, 1.5 butanedioic acids 1.2 | ???H 2O 21.0 ????″????1.0 ????″????1.0 ????″????1.0 ????″????1.0 ????″????0.5 ????″????3.0 ????″????1.0 ????″????1.0 ????″????1.0 ????″????1.0 | ??HEDP???????0.2 ????″???????0.2 ????″???????0.2 ????″???????0.2 ????″???????0.2 ????″???????0.2 ????″???????0.2 ????″???????0.2 ????″???????0.2 ????″???????0.2 ????″???????0.2 | ????K ????″ ????????″ ????????″ ????????″ ????????″ ????????″ ????????″ ????????″ ????????″ ????????″ | ????0.6 ????0.5 ????0.4 ????0.2 ????1.7 ????0.5 ????0.5 ????0.2 ????0.7 ????0.2 ????0.2 | ??3 ??3 ??3 ??3 ??3 ??3 ??3 ??2 ??5 ??3 ??3 | ?0.18 ?0.20 ?0.22 ?0.19 ?0.21 ?0.18 ?0.22 ?0.22 ?0.18 ?0.18 ?0.18 | ??0.2 ??0.2 ??0.2 ??0.2 ??0.2 ??0.2 ??0.2 ??0.2 ??0.2 ??0.2 ??0.2 | ????A ????A ????A ????A ????A ????A ????A ????A ????A ????A ????A | ????A ????A ????A ????A ????A ????A ????A ????A ????A ????A ????A |
| ??″????12 ??″????13 ??″????14 | ????″????10 ????″????10 ????″????10 | Oxalic acid 1.0 " 1.0 " 1.0 | ????″????1.0 ????″????1.0 ????″????1.0 | Methylene phosphonic acid 0.2 1,10-phenanthroline 0.2 aluminium acetylacetonate salt 0.2 | ????″ ????????″ ????????″ | ????0.5 ????0.3 ????0.3 | ??3 ??3 ??3 | ?0.20 ?0.20 ?0.20 | ??0.2 ??0.2 ??0.2 | ????A ????A ????A | ????A ????A ????A |
| ??″????15 ??″????16 | Silicon-dioxide is 10 silicon-dioxide 3. 10 2. | ????″????1.0 ????″????1.0 | ????″????1.0 ????″????1.0 | ??HEDP???????0.2 ????″???????0.2 | ????″ ????????″ | ????0.3 ????0.3 | ??3 ??3 | ?0.20 ?0.20 | ??0.2 ??0.2 | ????A ????A | ????A ????A |
| ??″????17 | Titanium dioxide 2. 6 | ????″????1.0 | ????″????1.0 | ??HEDP???????0.2 | ????″ | ????0.2 | ??3 | ?0.21 | ??0.3 | ????A | ????A |
| ??″????18 | Aluminum oxide 15 | ????″????1.0 | ????″????1.0 | ????″???????0.2 | ????″ | ????0.4 | ??3 | ?0.21 | ??0.3 | ????A | ????A |
| ??″????19 | Zirconium white 15 | ????″????1.0 | ????″????1.0 | ????″???????0.2 | ????″ | ????0.4 | ??3 | ?0.21 | ??0.3 | ????A | ????A |
| ??″????20 ??″????21 ??″????22 | Silicon-dioxide is 15 " 15 " 15 1. | ????″????1.0 ????″????1.0 ????″????1.0 | ????″????1.0 ????″????1.0 ????″????1.0 | ????″???????0.2 ????″???????0.2 ????″???????0.2 | ????Li ????Na ????Rb | ????0.4 ????0.4 ????0.4 | ??3 ??3 ??3 | ?0.22 ?0.22 ?0.22 | ??0.2 ??0.2 ??0.2 | ????A ????A ????A | ????A ????A ????A |
| Comparative example 1 " 2 " 3 " 4 | " 10 titanium dioxide are 6 titanium dioxide 2. 6 1. for silicon-dioxide 1. 10 | Aluminum nitrate 5.0--------aluminum nitrate 5.0 aluminum nitrates 5.0 | ???H 2O 21.0 ????″????1.0 ????--------- ????--------- | ?????----------- ??HEDP???????0.2 ?????----------- ?????----------- | ????- ????- ????- ????- | ????- ????- ????- ????- | ??2 ??2 ??3 ??3 | ?0.08 ?0.09 ?0.21 ?0.21 | ??0.4 ??0.2 ??0.4 ??0.3 | ????8 ????A ????B ????B | ????A ????A ????B ????B |
HEDP:1-hydroxyl ethane-1, the 1-di 2 ethylhexyl phosphonic acid
Utilize possibility on the industry
When polishing the substrate of disk with composition for use in polishing of the present invention, surface roughness is very little, and can at full speed polish. The disk of making of the dish of polishing uses as low floating mo(u)ld top half hard disk, but high density recording.
The MR magnetic head of the disk magnetic resistance effect that the dish that especially utilizes use to polish is made (has 3Gbit/inch with the high record density medium of medium representative2Above packing density), value is very high, with regard to having the high reliability medium, namely is used in the lower medium of packing density, and is also very useful.
Claims (18)
1. a composition for use in polishing magnetic disk substrate is characterized in that, is prevented that by alkali metal containing ion, abrasive particle, carboxylic acid, oxygenant, gelation the aqueous medium of agent from forming.
2. the polishing set of applications compound of claim 1 record, it is characterized in that, the content of abrasive particle is in the scope of 3～30 quality % in this aqueous medium, and the content of carboxylic acid is in the scope of 0.1～8.0 quality %, and the content of oxygenant is in the scope of 0.2～5.0 quality %.
3. the composition for use in polishing of claim 1 or 2 records is characterized in that the pH of this aqueous medium is about scope of 1～about 5.
4. the composition for use in polishing of each record of claim 1～3 is characterized in that, this alkali metal ion content measured is in the scope of 0.001～5.0 quality %.
5. the composition for use in polishing of each record of claim 1～4 is characterized in that, this alkalimetal ion is provided by alkali-metal oxyhydroxide.
6. the composition for use in polishing of each record of claim 1～5 is characterized in that, this basic metal is select from lithium, sodium, potassium, rubidium, caesium at least a.
7. the composition for use in polishing of each record of claim 1～5 is characterized in that, this basic metal is potassium.
8. the composition for use in polishing of each record of claim 1～3 is characterized in that, this abrasive particle is at least a by what select in aluminum oxide, titanium dioxide, silicon-dioxide, the zirconium white.
9. the composition for use in polishing of each record in the claim 1～3 or 8 is characterized in that, the median size of the secondary particle of this abrasive particle is 0.03～0.5 μ m.
10. the composition for use in polishing of each record in the claim 1～3 or 8 is characterized in that, this abrasive particle is the colloidal attitude particle.
11. the composition for use in polishing of each record of claim 1～3 is characterized in that, this carboxylic acid is that at least one COOH base or COO are arranged in the molecule
-The organic carboxyl acid of base.
12. the composition for use in polishing of claim 11 record, it is characterized in that this carboxylic acid is be selected from glyconic acid, lactic acid, tartrate, oxyacetic acid, R-Glyceric acid, oxysuccinic acid, citric acid, formic acid, acetate, propionic acid, vinylformic acid, oxalic acid, propanedioic acid, succsinic acid, hexanodioic acid, toxilic acid, methylene-succinic acid, glycine, Methionin, aspartic acid, L-glutamic acid at least a.
13. the composition for use in polishing of each record of claim 1～3 is characterized in that, this oxygenant is be selected from superoxide, persulphate, nitrate, oxysalt, molysite at least a.
14. the composition for use in polishing of claim 13 record is characterized in that this superoxide is a hydrogen peroxide.
15. the composition for use in polishing of each record of claim 1～3 is characterized in that, this gelation prevents that agent from being be selected from phosphonic acids compounds, phenanthroline, aluminium acetylacetonate salt at least a.
16. the composition for use in polishing of claim 15 record is characterized in that this phosphonic acids compounds is to be selected from phosphoric acid, 1-hydroxyl ethane-1,1-di 2 ethylhexyl phosphonic acid, Amino Trimethylene Phosphonic Acid at least a.
17. the composition for use in polishing of each record of claim 1～16 is characterized in that, this composition for use in polishing is a composition for use in polishing magnetic disk substrate.
18. a method of producing composition for use in polishing is characterized in that, adds alkalimetal ion in containing the aqueous medium that abrasive particle, carboxylic acid, oxygenant, gelation prevent agent, with the pH regulator of this aqueous medium to about 1～about 5.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP115592/00 | 2000-04-17 | ||
| JP2000115592 | 2000-04-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1366548A true CN1366548A (en) | 2002-08-28 |
| CN1249193C CN1249193C (en) | 2006-04-05 |
Family
ID=18627202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 01800964 Expired - Fee Related CN1249193C (en) | 2000-04-17 | 2001-04-16 | Composition for use in polishing magnetic disk substrate and method for preparing same |
Country Status (5)
| Country | Link |
|---|---|
| CN (1) | CN1249193C (en) |
| AU (1) | AU4876801A (en) |
| MY (1) | MY119774A (en) |
| TW (1) | TW528645B (en) |
| WO (1) | WO2001079377A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035257A (en) * | 2011-09-30 | 2013-04-10 | Hoya株式会社 | Manufacturing method of glass substrate for magnetic disk, magnetic disk, and magnetic recording/reproducing device |
| CN105761737A (en) * | 2015-01-02 | 2016-07-13 | Hgst荷兰有限公司 | Iron-oxidized Hard Disk Driver Enclosure Cover |
| CN108372460A (en) * | 2017-01-31 | 2018-08-07 | 通用汽车环球科技运作有限责任公司 | The chemically mechanical polishing of comparison resolution for improvement |
| CN109415598A (en) * | 2016-06-27 | 2019-03-01 | 三星Sdi株式会社 | Slurry composition for CMP and polishing method for metal film |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4231632B2 (en) * | 2001-04-27 | 2009-03-04 | 花王株式会社 | Polishing liquid composition |
| JP4095798B2 (en) * | 2001-12-20 | 2008-06-04 | 株式会社フジミインコーポレーテッド | Polishing composition |
| JP3875156B2 (en) * | 2002-08-07 | 2007-01-31 | 花王株式会社 | Roll-off reducing agent |
| JP4202201B2 (en) * | 2003-07-03 | 2008-12-24 | 株式会社フジミインコーポレーテッド | Polishing composition |
| KR20080059301A (en) * | 2005-11-22 | 2008-06-26 | 히다치 가세고교 가부시끼가이샤 | Polishing fluid for polishing aluminum films and method for polishing aluminum films with the same |
| JP5049249B2 (en) * | 2008-10-31 | 2012-10-17 | 花王株式会社 | Polishing liquid composition |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4002327A1 (en) * | 1990-01-26 | 1991-08-01 | Wacker Chemitronic | METHOD FOR THE WET-CHEMICAL TREATMENT OF SEMICONDUCTOR SURFACES AND SOLUTION FOR ITS IMPLEMENTATION |
| JP3458023B2 (en) * | 1995-08-01 | 2003-10-20 | メック株式会社 | Copper and copper alloy microetchants |
| JP3825827B2 (en) * | 1996-01-30 | 2006-09-27 | 昭和電工株式会社 | Polishing composition, magnetic disk substrate polishing method, and manufacturing method |
| JP3507628B2 (en) * | 1996-08-06 | 2004-03-15 | 昭和電工株式会社 | Polishing composition for chemical mechanical polishing |
| JPH10121035A (en) * | 1996-08-30 | 1998-05-12 | Showa Denko Kk | Composition for polishing magnetic disk substrate |
| US5958288A (en) * | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
| JPH10204416A (en) * | 1997-01-21 | 1998-08-04 | Fujimi Inkooporeetetsudo:Kk | Polishing composition |
| JPH11167711A (en) * | 1997-12-03 | 1999-06-22 | Showa Alum Corp | Production of magnetic disk substrate |
| JPH1180708A (en) * | 1997-09-09 | 1999-03-26 | Fujimi Inkooporeetetsudo:Kk | Composition for polishing |
| JP4076630B2 (en) * | 1998-08-07 | 2008-04-16 | 花王株式会社 | Polishing liquid composition |
-
2001
- 2001-03-16 TW TW90106240A patent/TW528645B/en not_active IP Right Cessation
- 2001-04-16 AU AU48768/01A patent/AU4876801A/en not_active Abandoned
- 2001-04-16 CN CN 01800964 patent/CN1249193C/en not_active Expired - Fee Related
- 2001-04-16 WO PCT/JP2001/003221 patent/WO2001079377A1/en active Application Filing
- 2001-04-17 MY MYPI20011813 patent/MY119774A/en unknown
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035257A (en) * | 2011-09-30 | 2013-04-10 | Hoya株式会社 | Manufacturing method of glass substrate for magnetic disk, magnetic disk, and magnetic recording/reproducing device |
| CN103035257B (en) * | 2011-09-30 | 2017-04-12 | Hoya株式会社 | Manufacturing method of glass substrate for magnetic disk, magnetic disk, and magnetic recording/reproducing device |
| CN105761737A (en) * | 2015-01-02 | 2016-07-13 | Hgst荷兰有限公司 | Iron-oxidized Hard Disk Driver Enclosure Cover |
| CN109415598A (en) * | 2016-06-27 | 2019-03-01 | 三星Sdi株式会社 | Slurry composition for CMP and polishing method for metal film |
| CN109415598B (en) * | 2016-06-27 | 2021-10-22 | 三星Sdi株式会社 | CMP slurry composition for metal film and polishing method |
| CN108372460A (en) * | 2017-01-31 | 2018-08-07 | 通用汽车环球科技运作有限责任公司 | The chemically mechanical polishing of comparison resolution for improvement |
Also Published As
| Publication number | Publication date |
|---|---|
| MY119774A (en) | 2005-07-29 |
| AU4876801A (en) | 2001-10-30 |
| WO2001079377A1 (en) | 2001-10-25 |
| TW528645B (en) | 2003-04-21 |
| CN1249193C (en) | 2006-04-05 |
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| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
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Granted publication date: 20060405 Termination date: 20160416 |