CN1228669C - Electrostatic discharge protection structure - Google Patents
Electrostatic discharge protection structure Download PDFInfo
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- CN1228669C CN1228669C CN200310101952.4A CN200310101952A CN1228669C CN 1228669 C CN1228669 C CN 1228669C CN 200310101952 A CN200310101952 A CN 200310101952A CN 1228669 C CN1228669 C CN 1228669C
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- 239000002184 metal Substances 0.000 claims abstract description 146
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 49
- 230000003068 static effect Effects 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 230000001681 protective effect Effects 0.000 claims description 33
- 239000010409 thin film Substances 0.000 claims description 33
- 238000009413 insulation Methods 0.000 claims description 27
- 230000000694 effects Effects 0.000 claims description 24
- 239000011521 glass Substances 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 7
- 238000005036 potential barrier Methods 0.000 claims description 4
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 208000027418 Wounds and injury Diseases 0.000 description 5
- 230000006378 damage Effects 0.000 description 5
- 208000014674 injury Diseases 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- 210000003813 thumb Anatomy 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Abstract
An electrostatic discharge protection structure is manufactured on a substrate of a liquid crystal display, and is provided with a pixel array, a plurality of scanning lines and a plurality of signal lines which are formed by a plurality of pixel units in a display area range, the electrostatic discharge protection structure comprises: a first comb-shaped metal strip and an amorphous silicon layer. The first comb-shaped metal strip is manufactured outside the display area, wherein the short sides of the first comb-shaped metal strip are respectively aligned to the signal lines, and the tail ends of the short sides and the tail ends of the corresponding signal lines are sharp so as to accumulate static charges. The amorphous silicon layer is manufactured below a specific short side of the first comb-shaped metal strip and the corresponding signal line and used for electrically connecting the specific short side and the corresponding signal line, and the point discharge of the short side and the signal line causes the avalanche discharge of the amorphous silicon layer, so that the static charge is dissipated.
Description
Technical field
The present invention relates to the electrostatic discharge protection structure of a kind of Thin Film Transistor-LCD, particularly a kind of Thin Film Transistor-LCD.
Background technology
In the manufacture process of Thin Film Transistor-LCD (TFT-LCD), electrostatic discharge protective (Electro-Static Discharge, ESD) be always can not be indiscreet and negligent problem, accidentally, will cause unthinkable defective loss.The generation of electrostatic discharge protective (ESD) idea mainly be because the substrate of display is to be main material with glass, and glass is that (its conductance only is 10 to a megohmite insulant
-14S/cm), in other words, static is eliminated suitable slow of speed (Decay Rate).When glass baseplate surface because of the fabrication steps (as: dry-etching) of consecutive and transporting in the process of substrate, will accumulate the existence of many static charges on the substrate surface, unless suitable discharge channel is arranged, otherwise static charge can rest on the glass baseplate surface always.When display strided forward towards the target of bigger panel size, the static charge that accumulates on the substrate only can get more and more, and solved the charged problem of substrate as the measure of electrostatic discharge protective how, will be very important problem in the processing procedure.
As shown in Figure 1, be the electrostatic defending design diagram on the glass substrate that is manufactured with pixel array in the known techniques.As shown in the figure, pixel array is made up of a plurality of picture elements unit 10, please also refer to Fig. 2, is the composition assembly synoptic diagram of single picture element unit, and this picture element unit 10 is to comprise a thin film transistor (TFT) (TFT) 101, a storage capacitors 102 and a liquid crystal layer 103.The gate of the thin film transistor (TFT) of each picture element unit 10 in the array is the sweep traces (scan line) 12 that are connected on the array, and drain electrode then is connected to the signal wire (data line) 16 on the array.
Wherein, the design about electrostatic discharge protective on the array has two: one, is made in the first comb shape metal tape 14 of sweep trace 12 1 sides; Another then is the second comb shape metal tape 18 that is made in signal wire 16 1 sides.Both protection design is same principle, is example with the second comb shape metal tape 18 of signal wire 16 1 sides, and the end of each signal wire 16 is to be made into tip shape, and becomes relative gesture with each minor face 18a of the second comb shape metal tape 18 sharp-pointed terminal.The effect that end is made into tip shape is the static charge that exists on the glass substrate can be easy to most advanced and sophisticated place by electric charge and to produce discharge effect, by this static charge is discharged out from the glass substrate place, and reaches the effect of electrostatic discharge protective.
Above-mentioned known way only can be passive do electrostatic discharge protective, and each column scan line 12 also is difficult for taking place (in general will be accumulated to the high voltage of 7kV, just electric discharge phenomena might take place) with the point discharge phenomenon of each row signal line 16 and corresponding comb shape metal tape.Please also refer to Fig. 3, be about the section of structure of a minor face 18a end of the signal wire 16 and the second comb shape metal tape 18 in the zone 19, wherein a minor face 18a end of the signal wire 16 and the second comb shape metal tape 18 is made the structure of tip shape, be to utilize most advanced and sophisticated place easily to gather a large amount of static charges, reach the result of discharge by the snowslide (breakdown) of insulation course 24 again, but the material of insulation course 24 is generally silicon nitride, monox or silicon oxynitride, its electric conductivity is generally very poor, cause point discharge phenomenon to be difficult for taking place, and make static discahrge protection effect not good.
In addition, according to thumb rule, the static discharge incident of injury occurs in the edge of pixel array mostly, with above-mentioned known techniques, the edge of pixel array is still the part of viewing area 20, this will cause a plurality of picture elements unit 10 at 20 edges, viewing area will meet with the static discharge incident of injury, and then influence the whole image display quality of display.In view of this, the invention provides a kind of design of electrostatic discharge protective, allow static charge that fixing discharge path can be arranged, do not make in the viewing area that occurs in display.
Summary of the invention
Purpose of the present invention is for providing a kind of structure of electrostatic discharge protective.
Another purpose of the present invention is for providing a kind of electrostatic discharge protection structure, wherein by the making of vacant picture element unit, vacant signal wire or vacant sweep trace, even electrostatic discharge event, the also unlikely image display quality that influences display take place.
A further object of the present invention wherein by the avalanche and discharge phenomenon of amorphous silicon layer, allows electrostatic discharge protective that preferable effect is arranged for a kind of electrostatic discharge protection structure is provided.
Another object of the present invention wherein by the design of discharge capacity, increases the effect of electrostatic discharge protective for a kind of electrostatic discharge protection structure is provided.
Above-mentioned purpose of the present invention is realized by following technical scheme.
A kind of electrostatic discharge protection structure, be to be made on the glass substrate of Thin Film Transistor-LCD, in the scope of viewing area, have a pixel array, a plurality of sweep trace and a plurality of signal wire of being formed by a plurality of picture elements unit on this glass substrate, wherein the gate of the thin film transistor (TFT) of each this picture element unit is each this sweep trace that is connected to respective column, the drain electrode of the thin film transistor (TFT) of each this picture element unit then is connected to each this signal wire of corresponding row, and the feature of this electrostatic discharge protection structure is to comprise:
One first comb shape metal tape, be to be made in outside the viewing area, wherein a plurality of minor faces of this first comb shape metal tape are to be right against this a plurality of signal wires separately, and the end of the end of each this minor face and corresponding each this signal wire is to be tip shape, in order to build up of electrostatic charge; And
One amorphous silicon layer, it is the specific minor face that is made in this first comb shape metal tape and the below of corresponding this signal wire, in order to electrically connect this specific minor face and this respective signal line, the point discharge effect of the sharp-pointed end by this specific minor face and this respective signal line, cause the avalanche and discharge of this amorphous silicon layer, allow static charge be dissipated.
Described electrostatic discharge protection structure, it is characterized in that: more comprise a plurality of vacant picture elements unit, be to be made in outside the viewing area, wherein the gate of the thin film transistor (TFT) of each this vacant picture element unit is each this sweep trace that is connected to respective column, the drain electrode of the thin film transistor (TFT) of each this vacant picture element unit then is connected to each this signal wire of corresponding row, in order to as bringing out the zone that static discharge takes place.
Described electrostatic discharge protection structure is characterized in that: more comprising a vacant signal wire, is to be made in outside the viewing area, in order to as bringing out the zone that static discharge takes place.
Described electrostatic discharge protection structure, it is characterized in that: more comprise one second comb shape metal tape, be to be made in outside the viewing area, wherein a plurality of minor faces of this second comb shape metal tape are to be right against this a plurality of sweep traces separately, and the end of each this minor face is to be tip shape with the end of each corresponding this sweep trace, in order to build up of electrostatic charge.
Described electrostatic discharge protection structure, it is characterized in that: more comprise a discharge capacity, formed by this second comb shape metal tape, this first comb shape metal tape and an insulation course, wherein the long edge tail of this second comb shape metal tape and this first comb shape metal tape is to be tip shape, in order to build up of electrostatic charge, when the static charge of gathering arrives when a certain amount of,, reach electrostatic discharge protective by the avalanche and discharge of this insulation course.
A kind of electrostatic discharge protection structure, be to be made on the glass substrate of Thin Film Transistor-LCD, in the scope of viewing area, have a pixel array, a plurality of sweep trace and a plurality of signal wire of being formed by a plurality of picture elements unit on this glass substrate, wherein the gate of the thin film transistor (TFT) of each this picture element unit is each this sweep trace that is connected to respective column, the drain electrode of the thin film transistor (TFT) of each this picture element unit then is connected to each this signal wire of corresponding row, and this electrostatic discharge protection structure comprises at least:
A plurality of vacant picture elements unit, the gate of the thin film transistor (TFT) of each this vacant picture element unit is each this sweep trace that is connected to respective column, the drain electrode of the thin film transistor (TFT) of each this vacant picture element unit then is connected to each this signal wire of corresponding row, in order to as bringing out the zone that static discharge takes place;
One first comb shape metal tape, be to be made in outside the viewing area, wherein a plurality of minor faces of this first comb shape metal tape are to be right against this a plurality of signal wires separately, and the end of the end of each this minor face and corresponding each this signal wire is to be tip shape, in order to build up of electrostatic charge; And
One amorphous silicon layer, it is the below that is made in the signal wire that is connected with this vacant picture element unit and the corresponding minor face of this first comb shape metal tape, in order to electrically connect the corresponding minor face of this signal wire with this, by the point discharge effect of this signal wire with the sharp-pointed end of this corresponding minor face, cause the avalanche and discharge of this amorphous silicon layer, allow static charge be dissipated.
Described electrostatic discharge protection structure, it is characterized in that: more comprise one second comb shape metal tape, be to be made in outside the viewing area, wherein a plurality of minor faces of this second comb shape metal tape are to be right against this a plurality of sweep traces separately, and the end of each this minor face is to be tip shape with the end of each corresponding this sweep trace, in order to build up of electrostatic charge.
Described electrostatic discharge protection structure, it is characterized in that: more comprise a discharge capacity, formed by this second comb shape metal tape, this first comb shape metal tape and an insulation course, wherein the long edge tail of this second comb shape metal tape and this first comb shape metal tape is to be tip shape, in order to build up of electrostatic charge, when the static charge of gathering arrives when a certain amount of,, reach electrostatic discharge protective by the avalanche and discharge of this insulation course.
A kind of electrostatic discharge protection structure, be to be made on the glass substrate of Thin Film Transistor-LCD, in the scope of viewing area, have a pixel array, a plurality of sweep trace and a plurality of signal wire of being formed by a plurality of picture elements unit on this glass substrate, wherein the gate of the thin film transistor (TFT) of each this picture element unit is each this sweep trace that is connected to respective column, the drain electrode of the thin film transistor (TFT) of each this picture element unit then is connected to each this signal wire of corresponding row, and this electrostatic discharge protection structure comprises at least:
One vacant signal wire is to be made in outside the viewing area, and is parallel to outermost this signal wire, in order to as bringing out the zone that static discharge takes place;
One first comb shape metal tape, be to be made in outside the viewing area, wherein a plurality of minor faces of this first comb shape metal tape are to be right against these a plurality of signal wires and this vacant signal wire separately, and the end of each this minor face is to be tip shape with the end of this signal wire of corresponding each and this vacant signal wire, in order to build up of electrostatic charge; And
One amorphous silicon layer, it is the below that is made in this vacant signal wire and the corresponding minor face of this first comb shape metal tape, in order to electrically connect the corresponding minor face of this vacant signal wire with this, the point discharge effect of sharp-pointed end with the sharp-pointed end of this corresponding minor face by this vacant signal wire, cause the avalanche and discharge of this amorphous silicon layer, allow static charge be dissipated.
Described electrostatic discharge protection structure, it is characterized in that: more comprise one second comb shape metal tape, be to be made in outside the viewing area, wherein a plurality of minor faces of this second comb shape metal tape are to be right against this a plurality of sweep traces separately, and the end of each this minor face is to be tip shape with the end of each corresponding this sweep trace, in order to build up of electrostatic charge.
Described electrostatic discharge protection structure, it is characterized in that: more comprise a discharge capacity, formed by this second comb shape metal tape, this first comb shape metal tape and an insulation course, wherein the long edge tail of this second comb shape metal tape and this first comb shape metal tape is to be tip shape, in order to build up of electrostatic charge, when the static charge of gathering arrives when a certain amount of,, reach electrostatic discharge protective by the avalanche and discharge of this insulation course.
A kind of electrostatic discharge protection structure is to comprise:
One substrate;
One insulation course is made on this substrate;
One amorphous silicon layer is made on this insulation course;
One the first metal layer is to be made on this amorphous silicon layer, wherein has an opening in this first metal layer, in order to exposed this amorphous silicon layer; And
One protective seam is made on this first metal layer and this amorphous silicon layer;
Wherein by the avalanche and discharge of this amorphous silicon layer, the static charge that makes this first metal layer gather is dissipated.
Described electrostatic discharge protection structure is characterized in that: more comprise a n type between wherein above-mentioned the first metal layer and this amorphous silicon layer and mix layer, in order to reduce the Xiao Ji potential barrier between this first metal layer and this amorphous silicon layer.
Described electrostatic discharge protection structure, it is characterized in that: more comprise one second metal level, be to be made between this substrate and this insulation course, have more an opening in this second metal level, in order to exposed this substrate, wherein be to form a capacitance structure between this first metal layer and this second metal level, in order to build up of electrostatic charge.
Described electrostatic discharge protection structure is characterized in that: wherein above-mentioned the first metal layer is the usefulness that is used as a signal wire and one first comb shape metal tape.
Described electrostatic discharge protection structure is characterized in that: the second wherein above-mentioned metal level is the usefulness that is used as one scan line and one second comb shape metal tape.
Electrostatic defending design of the present invention has following advantage:
1, the present invention is by the avalanche and discharge phenomenon of amorphous silicon layer, than known techniques with insulation course as the discharge media, preferable discharge effect will be arranged.
2, electrostatic discharge event, the still unlikely image display quality that influences display as the generation area of bringing out static discharge, take place even make by being made in vacant picture element unit, vacant signal wire or the vacant sweep trace in the outside, viewing area in the present invention.
3, the present invention increases the discharge capacity structure, and the effect of electrostatic discharge protective is more complete with making.
4, electrostatic discharge protection structure of the present invention can just possess the effect of electrostatic discharge protective when each layer structure finished, can prevent the generation of electrostatic discharge event in real time.
To specific embodiment and detailed description with the accompanying drawing, can understand the plurality of advantages of foregoing and the present invention by following easily.
Description of drawings
Fig. 1 is the static injury protection design diagram according to known techniques;
Fig. 2 is the composition assembly synoptic diagram of single picture element unit;
Fig. 3 is according to the section of structure of known techniques in the signal wire and the second comb shape metal tape;
Fig. 4 is the partial schematic diagram according to the static injury protection design of first embodiment of the invention;
Fig. 5 is according to the section of structure of first embodiment of the invention in the signal wire and the first comb shape metal tape;
Fig. 6 is the section of structure according to the discharge capacity of first embodiment of the invention;
Fig. 7 is the partial schematic diagram according to the static injury protection design of second embodiment of the invention; And
Fig. 8 is according to the section of structure of second embodiment of the invention in the sweep trace and the second comb shape metal tape.
Embodiment
The invention provides a kind of electrostatic discharge protection structure of Thin Film Transistor-LCD, in the present invention, by being made in vacant (dummy) picture element unit outside the viewing area, vacant signal wire or vacant sweep trace, as bringing out the zone that static discharge takes place; Gathered the preferable avalanche and discharge phenomenon of a large amount of static charges and amorphous silicon layer again by the metal tip place, allow the static charge that exists on the display base plate be led off; Have more a discharge capacity structure in addition, equally can build up of electrostatic charge and reach the purpose of discharge by an insulation course.Therefore, will make the effect of electrostatic discharge protective more complete, and can keep the image display quality of display simultaneously by above-mentioned three kinds of structures.Below enumerate two preferred embodiments now with explanation the present invention, right those who are familiar with this art know that all this only is for example, and are not in order to limit invention itself.Details are as follows for appearance within relevant this two preferred embodiment.
First embodiment
Please refer to Fig. 4, is the partial schematic diagram according to the electrostatic discharge protective design of first embodiment of the invention.In embodiments of the present invention, the design about electrostatic discharge protective has three: one, the making of vacant (dummy) picture element unit 32; The 2nd, with the media of amorphous silicon layer 38 as avalanche and discharge; The 3rd, the discharge capacity structure in zone 44.
The part of vacant picture element unit 32 at first is described, be to be made in viewing area 30 outer periphery, wherein the gate of the thin film transistor (TFT) 101 of each vacant picture element unit 32 (the composition assembly of picture element unit reference simultaneously is shown in Figure 2) is the sweep trace 35 that is connected to the position respective column, and its drain electrode then is connected to the signal wire 34 or 341 of position corresponding row.Its role is to bring out the zone that static discharge takes place, according to thumb rule, the position that electrostatic discharge event takes place is normally at the fringe region of pixel array, therefore, in embodiments of the present invention, be with identical process conditions in the viewing area 30 outsides, make vacant picture element unit 32, even allow the also unlikely picture element unit 10 that has influence on viewing area 30 of electrostatic discharge event taking place, and then keeps the image display quality of display.In addition, also can same concept make vacant (dummy) signal wire and vacant (dummy) sweep trace, will illustrate at ensuing embodiment.
In embodiments of the present invention, design about electrostatic discharge protection structure still has with the media of amorphous silicon layer 38 as avalanche and discharge, as shown in Figure 4, it is a side of 30 external signal lines 34 and signal wire 341 in the viewing area, make one first comb shape metal tape 36, a plurality of minor face 36a and 361 of this first comb shape metal tape 36 wherein, be to be right against signal wire 34 and signal wire 341 separately, and the end of each minor face 36a and 361 and signal lines 34 are to be tip shape with the end of signal wire 341, in order to build up of electrostatic charge.Wherein below a specific minor face 361 of this first comb shape metal tape 36 and signal lines 341, more be manufactured with an amorphous silicon layer 38 in order to electrically connect this specific minor face 361 and this respective signal line 341, by the point discharge effect of this specific minor face 361 with the sharp-pointed end of this respective signal line 341, cause the avalanche and discharge of this amorphous silicon layer 38, allow static charge be dissipated.
Shown in Figure 5; it is section of structure according to zone 40; in order to the avalanche and discharge phenomenon of this amorphous silicon layer 38 to be described, this structure comprises a minor face 361 and the protective seam 48 that a substrate 41, an insulation course 43, an amorphous silicon layer 38, a n type mix layer 45, one signal wire 341 and the first comb shape metal tape 36.Wherein when making the minor face 361 of the signal wire 341 and the first comb shape metal tape 36, be to form with same metal level, so name with the first metal layer again, and when making, make and have an opening in this first metal layer, in order to exposed this amorphous silicon layer 38, make the minor face 361 of the signal wire 341 and the first comb shape metal tape 36 finish simultaneously.And the n type between the first metal layer and this amorphous silicon layer 38 mixes layer 45, is the Xiao Ji potential barrier (schottky barrier) in order to reduce by 38 of this first metal layer and this amorphous silicon layers.
After said structure was finished, by the avalanche and discharge of this amorphous silicon layer 38, the static charge that makes minor face 361 tips of this signal wire 341 and the first comb shape metal tape 36 gather was dissipated, and reaches the effect of electrostatic discharge protective.
At last, electrostatic discharge protective design in the embodiment of the invention, part about the structure of discharge capacity, more be contained in viewing area 30 sides outer, sweep trace 35 and make one second comb shape metal tape 42, wherein a plurality of minor face 42a of this second comb shape metal tape 42 are right against this sweep trace 35 separately, and the end of each this minor face 42a is to be tip shape with the end of each corresponding this sweep trace 35, and the terminal long limit 36b end with this first comb shape metal tape of the long limit 42b of this second comb shape metal tape is tip shape equally, in order to build up of electrostatic charge.
As shown in Figure 6, it is section of structure for zone 44, when the terminal long limit 36b end with the first comb shape metal tape of the long limit 42b of the second comb shape metal tape gathers a large amount of static charge, owing to have an insulation course 43 between above-mentioned double-layer structure, make this structure just like a capacitance structure (naming with discharge capacity) in the embodiment of the invention.When the static charge of gathering arrives when a certain amount of,, can reach the effect of electrostatic discharge protective equally by the avalanche and discharge of this insulation course 43.
Second embodiment
Please refer to Fig. 7, it is electrostatic discharge protective design according to second embodiment of the invention, in embodiments of the present invention, be 50 the outside and parallel signal line 52 places in the viewing area, more make one vacant (dummy) signal wire 521, distance between wherein vacant signal wire 521 and the signal wire 52, still must keep and be manufactured with picture element unit 10 signal wire be equal to spacing, in order to as bringing out the zone that static discharge takes place.Then, identical with first embodiment is to be manufactured with one first comb shape metal tape 56 and one second comb shape metal tape 58 equally, and equally by the avalanche and discharge of amorphous silicon layer 60, to reach the effect of electrostatic discharge protective.In addition, the also sharp-pointed terminal overlapping of the long limit 58b of long limit 56b by the first comb shape metal tape and one second comb shape metal tape, the structure of formation discharge capacity makes the effect of electrostatic discharge protective more complete.
Equally as shown in Figure 7, in second embodiment of the invention, 50 outsides and parallel scan lines 54 places in the viewing area, more make one vacant (dummy) sweep trace 541, the effect that increases this vacant sweep trace 541 is, desire sharp-pointed end at the minor face 581 of this vacant sweep trace 541 and the second comb shape metal tape, the same amorphous silicon layer 62 of making, to increase the effect of electrostatic discharge protective, but the position of the minor face 581 of the vacant sweep trace 541 and the second comb shape metal tape, with the position of the minor face 561 of the vacant signal wire 521 and the first comb shape metal tape and inequality, so top of the minor face 581 of the vacant sweep trace 541 and the second comb shape metal tape, must make a metal level (the first metal layer) separately, could do avalanche and discharge by amorphous silicon layer 62.
Please also refer to Fig. 8, it is section of structure according to this zone 68, the minor face 581 of the vacant sweep trace 541 and the second comb shape metal tape is made on the substrate 70, when making the minor face 581 of the vacant sweep trace 541 and the second comb shape metal tape, be to form wherein with same metal level, so name with second metal level, and when making, make in this second metal level to have an opening,, make the minor face 581 of the vacant sweep trace 541 and the second comb shape metal tape finish simultaneously in order to exposed this substrate 70.Then form insulation course 72 and amorphous silicon layer 62 in regular turn.Subsequently metal level 64 and metal level 66; form a first metal layer earlier on this amorphous silicon layer 62, make again to have an opening in this first metal layer, with exposed this amorphous silicon layer 62; make metal level 64 and metal level 66 finish simultaneously, form a protective seam 76 again in the top of this structure at last.
In addition, 62 of metal level 64 and metal level 66 and amorphous silicon layers have more a n type and mix layer 74, are the Xiao Ji potential barriers (schottky barrier) in order to reduce by 74 of this metal level 64 and metal level 66 and this amorphous silicon layers.By said structure as can be known, the minor face 581 of the metal level 64 and the second comb shape metal tape can form a capacitance structure, similarly, metal level 66 can form another capacitance structure with vacant sweep trace 541, but above-mentioned capacitance structure build up of electrostatic charge, in addition, the sharp-pointed end of metal level 64 and metal level 66 also has the effect of build up of electrostatic charge.Therefore, when electric charge arrives when a certain amount of, static charge can be by the avalanche and discharge of amorphous silicon layer 62 on the one hand; On the other hand, insulation course 72 also has the effect of avalanche and discharge simultaneously, makes the effect of electrostatic discharge protective more complete.
Though the present invention illustrates as above with preferred embodiments, so it is not only to terminate in the foregoing description in order to limit the present invention's spirit with the invention entity.Be with, the modification of being done in not breaking away from spirit of the present invention and scope all should be included in the following claim.
Claims (13)
1, a kind of electrostatic discharge protection structure, be to be made on the glass substrate of Thin Film Transistor-LCD, in the scope of viewing area, have a pixel array, a plurality of sweep trace and a plurality of signal wire of being formed by a plurality of picture elements unit on this glass substrate, wherein the gate of the thin film transistor (TFT) of each this picture element unit is each this sweep trace that is connected to respective column, the drain electrode of the thin film transistor (TFT) of each this picture element unit then is connected to each this signal wire of corresponding row, and the feature of this electrostatic discharge protection structure is to comprise:
One first comb shape metal tape is to be made in outside the viewing area, and wherein a plurality of minor faces of this first comb shape metal tape are to be right against this a plurality of signal wires separately, and the end of the end of each this minor face and corresponding each this signal wire is to be tip shape; And
One vacant signal wire is to be made in outside the viewing area, in order to as bringing out the zone that static discharge takes place;
One amorphous silicon layer is the below that is made in a specific minor face Yu this vacant signal wire of this first comb shape metal tape.
2, electrostatic discharge protection structure according to claim 1, it is characterized in that: more comprise a plurality of vacant picture elements unit, be to be made in outside the viewing area, wherein the gate of the thin film transistor (TFT) of each this vacant picture element unit is each this sweep trace that is connected to respective column, the drain electrode of the thin film transistor (TFT) of each this vacant picture element unit then is connected to each this signal wire of corresponding row, in order to as bringing out the zone that static discharge takes place.
3, electrostatic discharge protection structure according to claim 1 and 2, it is characterized in that: more comprise one second a comb shape metal tape and a vacant sweep trace, be to be made in outside the viewing area, wherein a plurality of minor faces of this second comb shape metal tape are to be right against these a plurality of sweep traces and this vacant sweep trace separately, and the end of each this minor face is to be tip shape with the end of each corresponding this sweep trace, in order to build up of electrostatic charge.
4, electrostatic discharge protection structure according to claim 3, it is characterized in that: more comprise a discharge capacity, formed by this second comb shape metal tape, this first comb shape metal tape and an insulation course, wherein the long edge tail of this second comb shape metal tape and this first comb shape metal tape is to be tip shape, in order to build up of electrostatic charge, when the static charge of gathering arrives when a certain amount of,, reach electrostatic discharge protective by the avalanche and discharge of this insulation course.
5, a kind of electrostatic discharge protection structure, be to be made on the glass substrate of Thin Film Transistor-LCD, in the scope of viewing area, have a pixel array, a plurality of sweep trace and a plurality of signal wire of being formed by a plurality of picture elements unit on this glass substrate, wherein the gate of the thin film transistor (TFT) of each this picture element unit is each this sweep trace that is connected to respective column, the drain electrode of the thin film transistor (TFT) of each this picture element unit then is connected to each this signal wire of corresponding row, and this electrostatic discharge protection structure comprises at least:
A plurality of vacant picture elements unit, the gate of the thin film transistor (TFT) of each this vacant picture element unit is each this sweep trace that is connected to respective column, the drain electrode of the thin film transistor (TFT) of each this vacant picture element unit then is connected to each this signal wire of corresponding row, in order to as bringing out the zone that static discharge takes place;
One vacant signal wire is to be made in outside the viewing area and to be parallel to those signal wires;
One first comb shape metal tape, be to be made in outside the viewing area, wherein a plurality of minor faces of this first comb shape metal tape are to be right against these a plurality of signal wires and this vacant signal wire separately, and the end of the end of each this minor face and corresponding each this signal wire is to be tip shape, in order to build up of electrostatic charge; And
One amorphous silicon layer, it is the below that is made in the vacant signal wire that is connected with this vacant picture element unit and the corresponding minor face of this first comb shape metal tape, in order to electrically connect the corresponding minor face of this vacant signal wire with this, by the point discharge effect of this vacant signal wire with the sharp-pointed end of this corresponding minor face, cause the avalanche and discharge of this amorphous silicon layer, allow static charge be dissipated.
6, electrostatic discharge protection structure according to claim 5, it is characterized in that: more comprise one second comb shape metal tape and vacant sweep trace, be to be made in outside the viewing area, wherein a plurality of minor faces of this second comb shape metal tape are to be right against these a plurality of sweep traces and vacant sweep trace separately, and the end of each this minor face is to be tip shape with the end of each corresponding this sweep trace, in order to build up of electrostatic charge.
7, electrostatic discharge protection structure according to claim 6, it is characterized in that: more comprise a discharge capacity, formed by this second comb shape metal tape, this first comb shape metal tape and an insulation course, wherein the long edge tail of this second comb shape metal tape and this first comb shape metal tape is to be tip shape, in order to build up of electrostatic charge, when the static charge of gathering arrives when a certain amount of,, reach electrostatic discharge protective by the avalanche and discharge of this insulation course.
8, a kind of electrostatic discharge protection structure, be to be made on the glass substrate of Thin Film Transistor-LCD, in the scope of viewing area, have a pixel array, a plurality of sweep trace and a plurality of signal wire of being formed by a plurality of picture elements unit on this glass substrate, wherein the gate of the thin film transistor (TFT) of each this picture element unit is each this sweep trace that is connected to respective column, the drain electrode of the thin film transistor (TFT) of each this picture element unit then is connected to each this signal wire of corresponding row, and this electrostatic discharge protection structure comprises at least:
One vacant signal wire is to be made in outside the viewing area;
One first comb shape metal tape, be to be made in outside the viewing area, wherein a plurality of minor faces of this first comb shape metal tape are to be right against these a plurality of signal wires and this vacant signal wire separately, and the end of each this minor face is to be tip shape with corresponding each this signal wire and the end of this vacant signal wire; And
One vacant sweep trace;
One second comb shape metal tape is to be made in outside the viewing area, and wherein a plurality of minor faces of this second comb shape metal tape are to be right against these a plurality of sweep traces and vacant sweep trace separately, and the end of the end of each this minor face and corresponding each this sweep trace is to be tip shape;
One amorphous silicon layer is the below that is made in this vacant signal wire and the corresponding minor face of this first comb shape metal tape.
9, electrostatic discharge protection structure according to claim 8, it is characterized in that: more comprise a discharge capacity, formed by this second comb shape metal tape, this first comb shape metal tape and an insulation course, wherein the long edge tail of this second comb shape metal tape and this first comb shape metal tape is to be tip shape, in order to build up of electrostatic charge, when the static charge of gathering arrives when a certain amount of,, reach electrostatic discharge protective by the avalanche and discharge of this insulation course.
10, a kind of electrostatic discharge protection structure is to comprise:
One substrate;
One insulation course is to be made on this substrate;
One amorphous silicon layer is made on this insulation course;
One the first metal layer is to be made on this amorphous silicon layer, wherein has an opening in this first metal layer, in order to exposed this amorphous silicon layer; And
One second metal level is to be made between this substrate and this insulation course, has more an opening in this second metal level, in order to exposed this substrate, wherein is to form a capacitance structure between this first metal layer and this second metal level, in order to build up of electrostatic charge;
One protective seam is to be made on this first metal layer and this amorphous silicon layer;
Wherein by the avalanche and discharge of this amorphous silicon layer, the static charge that makes this first metal layer gather is dissipated.
11, electrostatic discharge protection structure according to claim 10 is characterized in that: more comprise a n type between wherein above-mentioned the first metal layer and this amorphous silicon layer and mix layer, in order to reduce the Xiao Ji potential barrier between this first metal layer and this amorphous silicon layer.
12, electrostatic discharge protection structure according to claim 10 is characterized in that: wherein above-mentioned the first metal layer is the usefulness that is used as a signal wire and one first comb shape metal tape.
13, electrostatic discharge protection structure according to claim 10 is characterized in that: the second wherein above-mentioned metal level is the usefulness that is used as one scan line and one second comb shape metal tape.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200310101952.4A CN1228669C (en) | 2003-10-17 | 2003-10-17 | Electrostatic discharge protection structure |
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| CN200310101952.4A CN1228669C (en) | 2003-10-17 | 2003-10-17 | Electrostatic discharge protection structure |
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| CN1228669C true CN1228669C (en) | 2005-11-23 |
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