CN113866863B - Chiral optical element and preparation method thereof - Google Patents
Chiral optical element and preparation method thereof Download PDFInfo
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- CN113866863B CN113866863B CN202111262629.XA CN202111262629A CN113866863B CN 113866863 B CN113866863 B CN 113866863B CN 202111262629 A CN202111262629 A CN 202111262629A CN 113866863 B CN113866863 B CN 113866863B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 117
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 230000004044 response Effects 0.000 claims abstract description 42
- 239000000463 material Substances 0.000 claims abstract description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052732 germanium Inorganic materials 0.000 claims description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 10
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 7
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 6
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 6
- 239000005083 Zinc sulfide Substances 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- AZCUJQOIQYJWQJ-UHFFFAOYSA-N oxygen(2-) titanium(4+) trihydrate Chemical compound [O-2].[O-2].[Ti+4].O.O.O AZCUJQOIQYJWQJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000004408 titanium dioxide Substances 0.000 claims description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 4
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 abstract description 4
- 238000002983 circular dichroism Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 16
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000002356 single layer Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 230000004298 light response Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Polarising Elements (AREA)
Abstract
The application discloses a chiral optical element and a preparation method thereof, wherein the chiral optical element comprises: a substrate and at least one chiral superstructure disposed on the substrate; the single chiral superstructure comprises at least one dielectric film, each dielectric film is overlapped, the chiral optical element with a certain structure is arranged, parameters of the chiral superstructure are changed, the chiral optical response wave band and the intensity of the chiral superstructure are regulated and controlled, and meanwhile, the dielectric films with anti-reflection and reflection functions for the optical response wave band of the chiral optical element are formed through the arrangement of the layer number, the material and the thickness of the at least one dielectric film, so that stronger circular dichroism optical activity can be realized for light in different wave bands, and the application range of the chiral structure is enhanced.
Description
Technical Field
The application relates to the technical field of optical encryption elements, in particular to a chiral optical element and a preparation method thereof.
Background
Chiral is a fundamental property in nature, and is indistinguishable from our life. Qualitatively, an object can be considered chiral as long as it is identical to its mirror image but cannot be superimposed on each other by rotation or translation. Optical activity is one of the most important properties of chiral materials, and the nature of the optical activity is that the chiral materials have different interaction forces on left and right circularly polarized light.
In a chiral material of right hand, right circularly polarized light is selectively reflected, while left circularly polarized light is transmitted, whereas in a chiral material of left hand, the right hand is opposite. When the metamaterial has extremely strong chirality, the metamaterial even presents a negative refractive index, the negative refractive index material is also called chiral metamaterial, and the object can be 'stealth' by utilizing the negative refractive index material, so that sub-wavelength resolution imaging breaking through diffraction limit is realized, and therefore, the research on chiral structures becomes the forefront research subject in the fields of electromagnetism and optics.
In the prior art, in the chiral structure research, the controllable range of the corresponding working wavelength and response intensity of chiral optics in the artificial microstructure is limited, the regulation and control of chiral optical response wave bands and intensity of the chiral microstructure cannot be realized through the limited change of parameters of the microstructure, and further, the chiral microstructure cannot be changed through the change of parameters of the chiral superstructure, so that the chiral structure can realize stronger circular dichroism optical activity on light in different wave bands, and the application range of the chiral superstructure is enhanced.
Therefore, there is an urgent need to design a chiral optical element to solve the problem in the prior art that the adjustment and control of the chiral optical response wave band and the intensity cannot be realized through the limited change of the microstructure parameters, and further the chiral super-structure parameters cannot be changed, so that the chiral structure can realize stronger circular dichroism optical activity on light in different wave bands, and the application range of the chiral structure is enhanced.
Disclosure of Invention
In order to solve the problems in the prior art, embodiments of the present application provide a technical scheme of a chiral optical element and a preparation method thereof, where the technical scheme is as follows:
in one aspect, there is provided a chiral optical element comprising: a substrate and at least one chiral superstructure disposed on the substrate;
the chiral superstructure comprises at least one dielectric film, and the dielectric films are overlapped.
Further, the chiral superstructure is in a zigzag shape.
Further, the chiral superstructure is in a right spiral reverse word shape or a left spiral reverse word shape.
Further, the distance between the adjacent edges in the chiral superstructure is 50-100nm.
Further, the single-layer dielectric film of the chiral super structure is of a spiral film line structure.
Further, the line width of the dielectric film is 10-30nm.
Further, the outer ring size of the reverse word line of the chiral superstructure is matched with the optical response band of the chiral optical element.
Further, the material of the at least one layer of medium comprises one or more of hafnium oxide, tantalum oxide, titanium pentoxide, titanium dioxide, magnesium fluoride, silicon dioxide, germanium, zinc sulfide, silicon and the like.
Further, the substrate includes at least one of a quartz substrate, a silicon substrate, and a germanium substrate.
In another aspect, a method of preparing a chiral optical element is provided, comprising the steps of:
providing a substrate;
forming a photoresist layer on the substrate;
exposing by using a photoetching plate with a chiral superstructure pattern, and forming at least one preset pattern of the chiral superstructure on the substrate;
performing dielectric film deposition on one side of the substrate, on which the preset pattern is formed, so as to generate at least one layer of dielectric film at the preset pattern of the substrate, thereby obtaining the at least one chiral superstructure; wherein, each layer of dielectric film is overlapped;
and removing the residual photoresist on the substrate to obtain the chiral optical element.
The chiral optical element and the preparation method thereof have the following technical effects:
1. according to the method, the chiral superstructure in the shape of the Chinese character 'Hui' is arranged, and the size of the chiral superstructure is resonantly matched with the response wavelength through the parameter change of the chiral superstructure, so that the chiral optical response wave band and the intensity of the chiral superstructure are regulated and controlled.
2. The number of layers, the material and the thickness of at least one dielectric film are set, and the size of the chiral superstructure is set, so that the dielectric film with anti-reflection and reflection for the optical response wave band of the chiral optical element is formed, the incident circularly polarized light in different optical response wave bands is more responsive, and the optical response characteristics of the chiral optical element are enhanced.
3. The method for preparing the chiral optical element is simple and easy to operate, high in success rate, low in cost and convenient to popularize.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a chiral optical element according to an embodiment of the present disclosure;
FIG. 2 is a side view of a chiral optical element provided in an embodiment of the present application;
FIG. 3 is a schematic structural diagram of a chiral superstructure comprising 9 chiral superstructure provided in an embodiment of the present application;
fig. 4 is a schematic structural diagram of a chiral superstructure in a right spiral reverse-word shape according to an embodiment of the present application;
fig. 5 is a schematic flow chart of a method for preparing a chiral optical element according to an embodiment of the present application;
wherein, the reference numerals correspond to: 1-a substrate; 2-chiral superstructures.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present application based on the embodiments herein.
It should be noted that in the description created in this application, the terms "comprises" and "comprising," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements that are expressly listed or inherent to such process, method, article, or apparatus. Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic may be included in at least one implementation of the invention.
Referring to fig. 1 and fig. 2, fig. 1 is a schematic structural diagram of a chiral optical element according to an embodiment of the present application, fig. 2 is a side view of the chiral optical element according to an embodiment of the present application, and the chiral optical element is described in detail below with reference to fig. 1 and fig. 2.
The embodiment provides a chiral optical element, which comprises a substrate 1 and at least one chiral superstructure 2 arranged on the substrate 1; the single chiral superstructure 2 comprises at least one dielectric film, wherein the dielectric films are arranged in an overlapping manner.
In this embodiment, at least one chiral superstructure 2 is deposited on a substrate 1 according to a certain arrangement manner to form a chiral optical element, and the chiral optical response wave band and the intensity of the chiral optical element are regulated and controlled by changing relevant parameters such as the size of the chiral superstructure 2, so that the chiral optical element is subjected to resonance matching with different optical response wavelengths, and Bragg resonance scattering occurs, so that the chiral optical element exhibits different optical characteristics.
In a specific embodiment, as shown in fig. 3, a schematic structural diagram containing 9 chiral superstructures is provided in this embodiment, and the 9 chiral superstructures are arranged on a substrate in a matrix according to 3*3 columns, where it is to be noted that the schematic structural diagram is only shown in a specific embodiment, and may be shown in a matrix arrangement manner by using all chiral superstructures 2 in a left-spiral zigzag shape, or may be shown in a combination manner by using chiral superstructures 2 in a left-spiral zigzag shape and chiral superstructures 2 in a right-spiral zigzag shape, and may also be shown in a matrix arrangement manner according to columns of 2×2, 4*4, 5*5, and the like, which are not specifically shown herein.
In an alternative embodiment, the substrate 1 comprises at least one of a quartz substrate, a silicon substrate, and a germanium substrate.
In the embodiment of the present application, the substrate 1 includes at least one of a quartz substrate, a silicon substrate and a germanium substrate, and different substrate materials may be selected in practical situations, and it should be noted that only three types of commonly used substrates 1 are listed in the embodiment, and substrates made of other materials may be used, for example, without specific limitation.
In a specific embodiment, a suitable substrate 1 material may be selected according to a target wavelength band, for example, an optical response wavelength band of the chiral optical element is a wavelength band of visible light or a wavelength band of near infrared light, and then the substrate 1 may be selected to be a transparent quartz substrate in the above wavelength band; if the optical response band of the chiral optical element is a band to which infrared light belongs, the substrate 1 may be a silicon substrate or a germanium substrate that is transparent in the above-mentioned band, or may be another substrate that is transparent in the optical response band of the chiral optical element, which is not specifically described herein.
In an alternative embodiment, the chiral superstructure 2 is in the shape of a zigzag pattern.
In an alternative embodiment, the chiral superstructure 2 is in the shape of a right-handed back letter or a left-handed back letter.
In an alternative embodiment, the single-layer dielectric film of the chiral superstructure 2 is a spiral film line structure.
In the embodiment of the application, the chiral superstructure 2 presenting a left spiral zigzag shape is shown in fig. 1, the chiral superstructure 2 presenting a right spiral zigzag shape is shown in fig. 4, and when the spiral membrane line structure presents a clockwise arrangement, we call the chiral superstructure 2 presenting a right spiral zigzag shape; when the spiral membrane line structure is arranged anticlockwise, we call the left spiral reverse-letter-shaped chiral superstructure 2, and the chiral optical element of the spiral membrane line structure is provided with the reverse-letter-shaped chiral superstructure 2 so as to match response wavelength according to the size of the chiral superstructure 2, so that the chiral superstructure can resonate.
In an alternative embodiment, the single-layer dielectric film of the chiral superstructure 2 is a spiral film line structure.
In an alternative embodiment, the spacing between adjacent sides in chiral superstructure 2 is 50-100nm.
Further, the spacing between adjacent edges in the chiral superstructure 2 may be in the range of 50-60nm, 60-70nm, 70-80nm, 80-90nm, 90-100nm, and the like, and in this embodiment of the present application, other spacing ranges may be also used, and may be determined by combining the number of turns of the spiral film line structure, the line width of the dielectric film, and different optical response bands, which are not specifically defined herein.
In an alternative embodiment, the line width of the dielectric film is 10-30nm.
Further, the line width of the dielectric film may be in the range of 10-20nm, 20-30nm, or other interval ranges, which may be determined by combining the number of turns of the spiral film line structure, the interval between the adjacent edges in the chiral superstructure 2, and different optical response bands, which are not specifically defined herein.
In an alternative embodiment, the outer circle of the return letter of the chiral superstructure 2 is sized to match the optical response band of the chiral optical element.
In the embodiment of the application, the outer ring size of the back-word line of the chiral superstructure 2 is adjusted, so that the outer ring size of the back-word line of the adjusted chiral superstructure 2 is matched with the optical response wave band of the chiral optical element, and further the incident circularly polarized light in different optical response wave bands has stronger responsiveness, and the optical response characteristics of the chiral optical element are enhanced.
In an alternative embodiment, the material of the at least one dielectric film includes one or more of hafnium oxide, tantalum oxide, titanium pentoxide, titanium dioxide, magnesium fluoride, silicon dioxide, germanium, zinc sulfide, silicon, and the like.
In the embodiment of the application, different dielectric film materials can be selected according to the target wave band, for example, if the optical response wave band of the chiral optical element is the wave band of visible light or the wave band of near infrared light, the dielectric film can be one or more materials selected from hafnium oxide, tantalum oxide, titanium pentoxide, titanium dioxide, magnesium fluoride, silicon dioxide and the like; if the optical response band of the chiral optical element is a band to which infrared light belongs, the dielectric film may be one or more materials selected from germanium, zinc sulfide, silicon, and the like, and may be other materials, which are not specifically described herein.
It should be noted that, when the pitch of the chiral material is matched to the wavelength of the incident light in the same order, bragg resonance scattering occurs: mλ=pn avg sin alpha, where m is typically 1, lambda is the wavelength of incident light, P is the pitch of the material, n avg For the average refractive index of the material and the environment, α is the angle between the incident light and the material, and sin α is 1 when normal incidence, so it can be concluded that: the selectivity of chiral structures for scattered and transmitted circularly polarized light is entirely dependent on the chirality of the chiral structure in matching with light at the corresponding wavelength and is dependent only on the refractive index of the material and the chiral structure.
The chiral optical element described above is described below with reference to specific examples.
In the embodiment of the application, by setting the chiral superstructure 2 in the shape of a Chinese character ' hui ', and changing the size parameters of the chiral superstructure 2, the size of the chiral superstructure 2 is in resonance match with the response wavelength, and meanwhile, the thickness and the material of the dielectric film are determined by combining maxwell's equations, so that the regulation and control of chiral optical response wave bands and the intensity of the dielectric film are realized, wherein the larger the optical response wave band is, the larger the number of turns of the chiral superstructure 2 in the shape of the Chinese character ' hui ' is, and the size of the chiral superstructure 2 is in resonance match with the response wavelength.
In a specific embodiment, if the incident circularly polarized light of the light response band is in a single band (for example, the wavelength of the incident circularly polarized light is 532 nm), so that the chiral optical element forms a right-handed transmission enhancing element, the length and width of the chiral superstructure 2 can be set to 532nm so as to match the incident circularly polarized light of the single band, wherein the number of windings of the reverse-word pattern of the chiral superstructure 2, the line width of the dielectric film and the spacing between adjacent edges in the chiral superstructure 2 can be adjusted to 532nm, and the adjustment range is as described in the above range, and the thickness and the material of the dielectric film can be determined according to maxwell's equation, and in particular, the dielectric film can be a single layer of magnesium fluoride with a thickness of 96 nm. The chiral optical element is arranged to be a 532nm chiral superstructure 2 and a 96nm single-layer magnesium fluoride dielectric film, so that the chiral optical element has good anti-reflection characteristic on single-band incident circularly polarized light, and the optical response characteristic of the chiral optical element is further improved.
It should be noted that: the chiral superstructure 2 can be determined to be in a right spiral reverse-word shape or a left spiral reverse-word shape according to the type of the incident circularly polarized light, and specifically, when the incident circularly polarized light is right circularly polarized light, the chiral superstructure 2 is in a left spiral reverse-word shape; when the incident circularly polarized light is left circularly polarized light, the chiral superstructure 2 is right spiral reverse character-line shaped.
In another specific embodiment, if the incident circularly polarized light of the light response band is in the near infrared band (for example, the wavelength of the incident circularly polarized light is 780-1000 nm), so that the chiral optical element forms a right-handed transmission enhancing element, the length and width of the chiral superstructure 2 can be set to 780-1000nm so as to match the incident circularly polarized light of the near infrared band, the number of turns of the backset of the chiral superstructure 2, the line width of the dielectric film and the distance between the adjacent edges in the chiral superstructure 2 can be adjusted to 780-1000nm, the adjustment range is as described in the above range, the thickness and the material of the dielectric film can be determined according to maxwell's equation, specifically, the dielectric film can be a multilayer dielectric film with a thickness of 536.86nm, the side close to the substrate 1 is the first layer, and so on, the thickness and the material of the multilayer dielectric film are as shown in the following table:
| layer number | Material | Thickness/nm |
| 1 | Ta 2 O 5 | 97.57nm |
| 2 | SiO 2 | 179.55nm |
| 3 | Ta 2 O 5 | 31.09nm |
| 4 | SiO 2 | 106.98nm |
| 5 | Ta 2 O 5 | 121.67nm |
In the multilayer dielectric films on the surface, the dielectric films are overlapped, and the chiral optical element is arranged into the multilayer dielectric film of 780-1000nm chiral superstructure 2 and 536.86nm, so that the chiral optical element has better anti-reflection characteristic on incident circular polarized light in a near infrared band, and the optical response characteristic of the chiral optical element is further improved.
In another specific embodiment, if the incident circularly polarized light of the light response band is in the near infrared band (for example, the wavelength of the incident circularly polarized light is 780-1000 nm), so that the chiral optical element forms a right-handed reflection enhancing element, the length and width of the chiral superstructure 2 can be set to 780-1000nm so as to match the incident circularly polarized light of the near infrared band, the number of turns of the backset of the chiral superstructure 2, the line width of the dielectric film and the distance between the adjacent edges in the chiral superstructure 2 can be adjusted to 780-1000nm, the adjustment range is as described in the above range, the thickness and the material of the dielectric film can be determined according to maxwell's equation, specifically, the dielectric film can be a multilayer dielectric film with a thickness of 1603.54nm, the side close to the substrate 1 is the first layer, and so on, the thickness and the material of the multilayer dielectric film are as shown in the following table:
| layer number | Material | Thickness/nm |
| 1 | Ta 2 O 5 | 98.00 |
| 2 | SiO 2 | 145.07 |
| 3 | Ta 2 O 5 | 97.98 |
| 4 | SiO 2 | 145.10 |
| 5 | Ta 2 O 5 | 97.97 |
| 6 | SiO 2 | 145.15 |
| 7 | Ta 2 O 5 | 97.97 |
| 8 | SiO 2 | 145.10 |
| 9 | Ta 2 O 5 | 97.97 |
| 10 | SiO 2 | 145.11 |
| 11 | Ta 2 O 5 | 97.97 |
| 12 | SiO 2 | 290.15 |
In the multilayer dielectric films on the surface, the dielectric films are overlapped, and the chiral optical element has better reflection characteristic on incident circular polarized light in a near infrared band by arranging the chiral optical element into the 780-1000nm chiral superstructure 2 and the 1603.54nm multilayer dielectric film, so that the optical response characteristic of the chiral optical element is further enhanced.
The embodiment of the application also provides a method for preparing the chiral optical element, as shown in fig. 5, which is a schematic flow chart of the method for preparing the chiral optical element according to the embodiment of the application, and includes the following steps:
s1: providing a substrate 1;
in the embodiment of the present application, the substrate 1 includes at least one of a quartz substrate, a silicon substrate and a germanium substrate, and different substrate materials may be selected in practical situations, and it should be noted that only three types of commonly used substrates 1 are listed in the embodiment, and substrates made of other materials may be used, for example, without specific limitation.
In a specific embodiment, a suitable substrate 1 material may be selected according to a target wavelength band, for example, an optical response wavelength band of the chiral optical element is a wavelength band of visible light or a wavelength band of near infrared light, and then the substrate 1 may be selected to be a transparent quartz substrate in the above wavelength band; if the optical response band of the chiral optical element is a band to which infrared light belongs, the substrate 1 may be a silicon substrate or a germanium substrate that is transparent in the above-mentioned band, or may be another substrate that is transparent in the optical response band of the chiral optical element, which is not specifically described herein.
S2: forming a photoresist layer on the substrate 1;
in this embodiment, a photoresist layer may be formed by applying a layer of electron beam photoresist on the substrate 1 using a photoresist dispenser.
S3: exposing by using a photoetching plate with a chiral superstructure pattern, and forming at least one preset pattern of a chiral superstructure 2 on a substrate 1;
in this embodiment, the exposure is performed by using a photolithography plate with a chiral super-structure pattern, where the exposure method may include an electron beam exposure and development technique, and the electron beam exposure and development technique is used to set a desired preset pattern according to a specific parameter, where the preset pattern includes a right spiral zigzag shape or a left spiral zigzag shape, and the specific preset pattern may be set according to the size described in the chiral optical element, which is not described herein.
S4: performing dielectric film deposition on one side of the substrate 1 forming a preset pattern to generate at least one layer of dielectric film at the preset pattern of the substrate 1 so as to obtain at least one chiral superstructure 2; wherein, each layer of dielectric film is overlapped;
in this embodiment of the present application, the method for depositing the dielectric film may include electron beam evaporation, chemical vapor deposition, magnetron sputtering, etc., at least one layer of dielectric film is generated at the preset pattern of the substrate 1, and the description of the dielectric film may be set with reference to the material and thickness described in the chiral optical element, which is not described herein.
S5: the residual photoresist on the substrate 1 is removed to obtain the chiral optical element.
In the embodiment of the application, the residual photoresist is removed by using positive photoresist removal solution, and then the chiral optical element is obtained.
The method for preparing the chiral optical element is simple and easy to operate, high in success rate, low in cost and convenient to popularize.
In view of the above detailed description of the chiral optical element and the preparation method thereof, it can be seen that the chiral optical element and the preparation method thereof provided by the application have the following technical effects:
1. according to the method, the chiral superstructure in the shape of the Chinese character 'Hui' is arranged, and the size of the chiral superstructure is resonantly matched with the response wavelength through the parameter change of the chiral superstructure, so that the chiral optical response wave band and the intensity of the chiral superstructure are regulated and controlled.
2. The number of layers, the material and the thickness of at least one dielectric film are set, and the size of the chiral superstructure is set, so that the dielectric film with anti-reflection and reflection for the optical response wave band of the chiral optical element is formed, the incident circularly polarized light in different optical response wave bands is more responsive, and the optical response characteristics of the chiral optical element are enhanced.
3. The method for preparing the chiral optical element is simple and easy to operate, high in success rate, low in cost and convenient to popularize.
The foregoing is merely specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the present application, and the changes and substitutions are intended to be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (7)
1. A chiral optical element, comprising: a substrate (1) and at least one chiral superstructure (2) provided on said substrate (1);
the single chiral superstructure (2) comprises a plurality of layers of dielectric films, wherein each layer of dielectric film is arranged in an overlapping mode, and the materials of the plurality of layers of dielectric films comprise more than two of hafnium oxide, tantalum oxide, titanium pentoxide, titanium dioxide, magnesium fluoride, silicon dioxide, germanium, zinc sulfide and silicon;
the chiral superstructure (2) is in a reverse-character shape, the outer ring size of the reverse-character of the chiral superstructure (2) is matched with the optical response wave band of the chiral optical element, and the optical response wave band of incident circularly polarized light is 780-1000nm;
the length and width of the chiral superstructure (2) are 780-1000nm, the thickness of the multilayer dielectric film is 536.86nm or 1603.54nm, when the thickness of the multilayer dielectric film is 536.86nm, the multilayer dielectric film is composed of five layers of dielectric films of tantalum oxide, silicon dioxide, tantalum oxide, silicon dioxide and tantalum oxide which are sequentially arranged along the direction away from the substrate (1), and when the thickness of the multilayer dielectric film is 1603.54nm, the multilayer dielectric film is composed of twelve layers of dielectric films of tantalum oxide, silicon dioxide, tantalum oxide, silicon dioxide, tantalum oxide and silicon dioxide which are sequentially arranged along the direction away from the substrate (1).
2. Chiral optical element according to claim 1, characterized in that the chiral superstructure (2) has a right spiral zigzag shape or a left spiral zigzag shape.
3. Chiral optical element according to claim 1, characterized in that the spacing between adjacent edges in the chiral superstructure (2) is 50-100nm.
4. Chiral optical element according to claim 1, characterized in that the multilayer dielectric film of the chiral superstructure (2) is a spiral film line structure.
5. Chiral optical element according to claim 1 or 4, characterized in that the line width of the multilayer dielectric film is 10-30nm.
6. Chiral optical element according to claim 1, characterized in that the substrate (1) comprises at least one of a quartz substrate, a silicon substrate and a germanium substrate.
7. A method for preparing the chiral optical element according to any one of claims 1 to 6, comprising the steps of:
providing a substrate (1);
forming a photoresist layer on the substrate (1);
exposing by using a photoetching plate with a chiral superstructure pattern, and forming at least one preset pattern of a chiral superstructure (2) on the substrate (1);
performing dielectric film deposition on one side of the substrate (1) forming the preset pattern to generate a multi-layer dielectric film at the preset pattern of the substrate (1) so as to obtain the at least one chiral superstructure (2); wherein, each layer of dielectric film is overlapped;
and removing the residual photoresist on the substrate (1) to obtain the chiral optical element.
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Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103954363A (en) * | 2014-04-24 | 2014-07-30 | 浙江工业大学 | Circular polarized light detector and manufacturing method thereof |
| CN104316988A (en) * | 2014-11-17 | 2015-01-28 | 中国人民解放军国防科学技术大学 | Single-layer planar chirality metal structure circular polarizer |
| CN105137520A (en) * | 2015-09-22 | 2015-12-09 | 中国科学院上海技术物理研究所 | Gradually varied spiral metal chiral metamaterial circular polarizer |
| CN105181144A (en) * | 2015-09-25 | 2015-12-23 | 苏州大学 | Sub-wavelength circularly polarized light analyzer containing Archimedes spiral and preparation method thereof |
| CN105374918A (en) * | 2014-08-26 | 2016-03-02 | 清华大学 | Light-emitting device and display device with use of light-emitting device |
| WO2016159880A1 (en) * | 2015-03-31 | 2016-10-06 | Agency For Science, Technology And Research | Method of changing a circular dichroism spectrum of an electromagnetic wave |
| CN106124405A (en) * | 2016-08-15 | 2016-11-16 | 福州大学 | Circular dichroism based on line polarized light incidence One Dimension Periodic metallic channel measures system |
| CN106154388A (en) * | 2016-08-29 | 2016-11-23 | 苏州大学 | All dielectric pixel type full Stokes imaging polarization device and preparation method thereof |
| CN107479215A (en) * | 2017-07-13 | 2017-12-15 | 华中科技大学 | A kind of Terahertz Meta Materials modulator approach and products thereof |
| CN108801461A (en) * | 2018-06-20 | 2018-11-13 | 中国科学院上海光学精密机械研究所 | A kind of super surface circularly polarized light detecting element and preparation method thereof |
| CN108957614A (en) * | 2018-06-26 | 2018-12-07 | 南京理工大学 | The chiral asymmetric plane Meta Materials circular dichroism device of double-layer spiral line |
| CN109298548A (en) * | 2018-10-29 | 2019-02-01 | 中山科立特光电科技有限公司 | A kind of micro-nano structure for distinguishing left-hand polarization light and right-handed polarized light |
| CN110186872A (en) * | 2019-06-21 | 2019-08-30 | 电子科技大学 | A kind of index sensor and preparation method thereof |
| CN111029416A (en) * | 2019-10-30 | 2020-04-17 | 北京大学 | Circularly polarized light detector and preparation method thereof |
| CN111175269A (en) * | 2020-02-10 | 2020-05-19 | 陕西师范大学 | Micro-nano structure for realizing circular dichroism and chiral detection device |
| CN111474613A (en) * | 2020-04-18 | 2020-07-31 | 湖南大学 | Optical anti-counterfeiting nano composite structure and application thereof |
| JP2020160440A (en) * | 2019-03-20 | 2020-10-01 | 国立大学法人電気通信大学 | Circular dichroic filter |
| CN112346158A (en) * | 2020-10-13 | 2021-02-09 | 中山科立特光电科技有限公司 | Inclined U-shaped chiral structure and preparation method thereof |
| CN113481007A (en) * | 2021-07-19 | 2021-10-08 | 东南大学 | Method for enhancing molybdenum disulfide fluorescence based on double-L-shaped super-surface structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8194302B2 (en) * | 2009-12-15 | 2012-06-05 | Hewlett-Packard Development Company, L.P. | Active chiral photonic metamaterial |
-
2021
- 2021-10-28 CN CN202111262629.XA patent/CN113866863B/en active Active
Patent Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103954363A (en) * | 2014-04-24 | 2014-07-30 | 浙江工业大学 | Circular polarized light detector and manufacturing method thereof |
| CN105374918A (en) * | 2014-08-26 | 2016-03-02 | 清华大学 | Light-emitting device and display device with use of light-emitting device |
| CN104316988A (en) * | 2014-11-17 | 2015-01-28 | 中国人民解放军国防科学技术大学 | Single-layer planar chirality metal structure circular polarizer |
| WO2016159880A1 (en) * | 2015-03-31 | 2016-10-06 | Agency For Science, Technology And Research | Method of changing a circular dichroism spectrum of an electromagnetic wave |
| CN105137520A (en) * | 2015-09-22 | 2015-12-09 | 中国科学院上海技术物理研究所 | Gradually varied spiral metal chiral metamaterial circular polarizer |
| CN105181144A (en) * | 2015-09-25 | 2015-12-23 | 苏州大学 | Sub-wavelength circularly polarized light analyzer containing Archimedes spiral and preparation method thereof |
| CN106124405A (en) * | 2016-08-15 | 2016-11-16 | 福州大学 | Circular dichroism based on line polarized light incidence One Dimension Periodic metallic channel measures system |
| CN106154388A (en) * | 2016-08-29 | 2016-11-23 | 苏州大学 | All dielectric pixel type full Stokes imaging polarization device and preparation method thereof |
| CN107479215A (en) * | 2017-07-13 | 2017-12-15 | 华中科技大学 | A kind of Terahertz Meta Materials modulator approach and products thereof |
| CN108801461A (en) * | 2018-06-20 | 2018-11-13 | 中国科学院上海光学精密机械研究所 | A kind of super surface circularly polarized light detecting element and preparation method thereof |
| CN108957614A (en) * | 2018-06-26 | 2018-12-07 | 南京理工大学 | The chiral asymmetric plane Meta Materials circular dichroism device of double-layer spiral line |
| CN109298548A (en) * | 2018-10-29 | 2019-02-01 | 中山科立特光电科技有限公司 | A kind of micro-nano structure for distinguishing left-hand polarization light and right-handed polarized light |
| JP2020160440A (en) * | 2019-03-20 | 2020-10-01 | 国立大学法人電気通信大学 | Circular dichroic filter |
| CN110186872A (en) * | 2019-06-21 | 2019-08-30 | 电子科技大学 | A kind of index sensor and preparation method thereof |
| CN111029416A (en) * | 2019-10-30 | 2020-04-17 | 北京大学 | Circularly polarized light detector and preparation method thereof |
| CN111175269A (en) * | 2020-02-10 | 2020-05-19 | 陕西师范大学 | Micro-nano structure for realizing circular dichroism and chiral detection device |
| CN111474613A (en) * | 2020-04-18 | 2020-07-31 | 湖南大学 | Optical anti-counterfeiting nano composite structure and application thereof |
| CN112346158A (en) * | 2020-10-13 | 2021-02-09 | 中山科立特光电科技有限公司 | Inclined U-shaped chiral structure and preparation method thereof |
| CN113481007A (en) * | 2021-07-19 | 2021-10-08 | 东南大学 | Method for enhancing molybdenum disulfide fluorescence based on double-L-shaped super-surface structure |
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