CN113759221B - Terahertz sensor chip for insulator monitoring and insulator monitoring method - Google Patents
Terahertz sensor chip for insulator monitoring and insulator monitoring method Download PDFInfo
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- CN113759221B CN113759221B CN202110995296.5A CN202110995296A CN113759221B CN 113759221 B CN113759221 B CN 113759221B CN 202110995296 A CN202110995296 A CN 202110995296A CN 113759221 B CN113759221 B CN 113759221B
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Abstract
The invention discloses a terahertz sensor chip for insulator monitoring and an insulator monitoring method, which are used for monitoring an insulator ceramic structure on line; the terahertz wave generating device comprises a terahertz transmitting circuit, a terahertz receiving circuit, a low-frequency waveform generator for generating a periodic waveform and a data processing circuit; the terahertz transmitting circuit transmits terahertz signals to the inside of the insulator, the terahertz receiving circuit receives reflected signals from the inside of the insulator and mixes the reflected signals with the transmitted terahertz signals to obtain difference frequency signals; digitizing the difference frequency signal to obtain a digitized difference frequency signal; and extracting frequency information from the digitized difference frequency signal, and calculating according to the following formula to obtain the position of the crack inside the insulator.
Description
Technical Field
The invention belongs to the technical field of insulator monitoring in a power system, and particularly relates to a terahertz sensor chip for insulator monitoring and an insulator monitoring method.
Background
The insulator is arranged on a power transmission line or a transformer substation to realize electric insulation and mechanical fixation, but after long-term use, cracks can be generated in the insulator, so that the cracks can be found in time, regular detection is usually carried out by adopting a manual inspection mode, and the specific mode is appearance inspection through visual inspection or other means, but the internal cracks cannot be reliably inspected.
In order to ensure safety, the insulator replacement period is set to be far lower than the service life of the insulator, and a large number of insulators are replaced, so that the insulators with cracks inside can be prevented from being continuously used, but a large number of normal insulators without cracks inside are still arranged in the replaced insulators, and the insulators are wasted.
Disclosure of Invention
The invention aims to: in order to realize real-time detection of the internal state of the insulator, the invention provides a terahertz sensor chip for insulator monitoring and an insulator monitoring method.
The technical scheme is as follows: a terahertz sensor chip for insulator monitoring, comprising:
The terahertz transmitting circuit is used for transmitting terahertz signals into the insulator;
The terahertz receiving circuit is used for receiving the reflected signal from the inside of the insulator and mixing the reflected signal with the transmitted terahertz signal to obtain a difference frequency signal; digitizing the difference frequency signal to obtain a digitized difference frequency signal;
and the data processing circuit is used for extracting frequency information from the digitized difference frequency signal and obtaining the position of the crack inside the insulator based on the frequency information.
Further, the device also comprises a low-frequency waveform generator for generating a periodic waveform;
The terahertz transmitting circuit comprises a terahertz voltage-controlled oscillator, a terahertz amplifier, a terahertz power divider and a terahertz transmitting antenna which are sequentially connected; the output end of the low-frequency waveform generator is connected with the voltage control end of the terahertz voltage-controlled oscillator, one path of output of the terahertz power divider enters the inside of the insulator through the terahertz transmitting antenna, and the other path of output of the terahertz power divider enters the local oscillation port of the terahertz mixer of the terahertz receiving circuit;
The terahertz receiving circuit comprises a terahertz receiving antenna, a terahertz low-noise amplifier, a terahertz mixer, an intermediate frequency amplifier and an analog-to-digital converter which are connected in sequence; the terahertz receiving antenna is used for receiving a reflected signal reflected by cracks entering the insulator, and the reflected signal enters a radio frequency port of the terahertz mixer after being amplified by the terahertz low-noise amplifier;
the terahertz mixer is used for mixing signals from the radio frequency port and signals from the local oscillator port to generate difference frequency signals;
the difference frequency signal sequentially enters an intermediate frequency amplifier and an analog-to-digital converter to obtain a digitized difference frequency signal;
the data processing circuit is used for extracting frequency information of the digitized difference frequency signals to obtain the positions of cracks in the insulator.
Further, the crack position is the distance from the crack inside the insulator to the sensor, and is calculated according to the following formula:
wherein D represents the distance from the sensor to the crack, dF represents the difference frequency, T represents the waveform period generated by the low-frequency waveform generator, B represents the working bandwidth of the terahertz voltage-controlled oscillator, c represents the propagation speed of electromagnetic waves in vacuum, epsilon r represents the relative dielectric constant of the material, and mu r represents the relative magnetic permeability of the material.
Further, the terahertz amplifier comprises a transistor and a compensation circuit arranged between the drain electrode and the grid electrode of the transistor; the compensation circuit is a capacitance offset circuit.
Further, the transistor is a transistor with a common source structure or a common emitter structure.
Further, the compensation circuit includes an inductance or a passive device equivalent to the inductance.
Further, the terahertz voltage-controlled oscillator outputs a terahertz frequency signal through a harmonic power synthesis method.
Further, the harmonic power synthesis method includes:
designing the oscillation frequency of a terahertz voltage-controlled oscillator at 1/n of the working frequency, and working an n-order harmonic signal in an in-phase mode;
And taking a plurality of n-order harmonics to carry out in-phase superposition to obtain an output signal.
Further, the terahertz voltage-controlled oscillator comprises an active circuit, a first variable capacitance circuit, a differential inductance circuit for forming a resonance circuit, a first voltage input end for adjusting capacitance of the active circuit, a second voltage input end for adjusting capacitance of the first variable capacitance circuit and a third voltage input end for adjusting capacitance of the differential inductance circuit;
the active circuit is of a cross-coupling differential structure consisting of a transistor T1 and a transistor T2;
the first variable capacitance circuit comprises two back-to-back variable capacitances formed by the transistor T3 and the transistor T4 by connecting the drain and the source;
the differential inductance circuit comprises a transformer and a second variable capacitance circuit, wherein a secondary coil of the transformer is connected with the second variable capacitance circuit, and an output signal of the terahertz voltage-controlled oscillator is output from a primary coil of the transformer according to the designed relation between the oscillation frequency and the working frequency; the second variable capacitance circuit is two back-to-back variable capacitances formed by the transistor T5 and the transistor T6 by connecting the drain and the source.
The invention also discloses an insulator monitoring method, which comprises the following steps:
Step 1: transmitting terahertz signals to the inside of the insulator through the terahertz sensor chip for insulator monitoring;
Step2: receiving a reflected signal from the inside of the insulator, and mixing the reflected signal with the transmitted terahertz signal to obtain a difference frequency signal;
Step 3: digitizing the difference frequency signal to obtain a digitized difference frequency signal;
Step 4: extracting frequency information from the digitized difference frequency signal, and calculating to obtain the position of the crack inside the insulator according to the following formula:
wherein D represents the distance from the sensor to the crack, dF represents the difference frequency, T represents the waveform period generated by the low-frequency waveform generator, B represents the working bandwidth of the terahertz voltage-controlled oscillator, c represents the propagation speed of electromagnetic waves in vacuum, epsilon r represents the relative dielectric constant of the material, and mu r represents the relative magnetic permeability of the material.
The beneficial effects are that: the sensor chip provided by the invention realizes terahertz emission and terahertz echo reception, and judges the position of the crack distance sensor chip inside the insulator through echo analysis, so that the on-line monitoring of each insulator is realized.
Drawings
FIG. 1 is a schematic diagram of a terahertz chip system;
FIG. 2 is a periodic triangular wave pattern generated by a low frequency waveform generator;
FIG. 3 is a graph of voltage controlled oscillator output frequency versus time;
FIG. 4 is a schematic diagram of the difference frequency generated by transmitting and receiving terahertz;
FIG. 5 is a schematic diagram of a terahertz amplifier;
Fig. 6 is a schematic illustration of a terahertz broadband voltage-controlled oscillator.
Detailed Description
The technical scheme of the invention is further described with reference to the accompanying drawings and the embodiments.
On the premise of ensuring small volume and low power consumption, the invention provides a terahertz sensor chip based on a solid-state circuit, which is shown in fig. 1, and comprises a terahertz transmitting circuit, a terahertz receiving circuit, a low-frequency waveform generator for generating periodic triangular waves and a data processing circuit; the output end of the low-frequency waveform generator is connected with a terahertz transmitting circuit, and the data processing circuit is connected with a terahertz receiving circuit; the terahertz transmitting circuit comprises a terahertz voltage-controlled oscillator, a terahertz amplifier, a terahertz power divider and a terahertz transmitting antenna; the terahertz receiving circuit comprises an analog-to-digital converter, an intermediate frequency amplifier, a terahertz mixer, a terahertz low-noise amplifier and a terahertz receiving antenna; the low frequency waveform generator includes a digital synthesizer and a digital-to-analog converter.
The output end of the low-frequency waveform generator is connected with the voltage control end of the terahertz voltage-controlled oscillator, as shown in fig. 2, the low-frequency waveform generator generates a series of periodic triangular waves in a low frequency band (below 10 MHz), the voltage amplitude of the triangular waves is periodically changed from V1 to V2, and the control voltage of the terahertz voltage-controlled oscillator is controlled through the periodically changed triangular waves. Assuming that the voltage and frequency of the terahertz voltage-controlled oscillator are in a linear relationship, when the control voltage of the terahertz voltage-controlled oscillator is a periodic triangular wave, the relationship between the terahertz frequency and time output by the terahertz voltage-controlled oscillator is also in the form of a triangular wave. As shown in fig. 3, if the voltage control range of the terahertz voltage-controlled oscillator is V1 to V2 and the operating frequency range is F1 to F2, the output frequency of the terahertz voltage-controlled oscillator is linearly changed between F1 and F2 with time. The signal is amplified by a terahertz amplifier and then enters a terahertz power divider. One output of the terahertz power divider is transmitted into the insulator through the terahertz antenna, and the other output of the terahertz power divider is transmitted into a local oscillation port of a mixer of the terahertz receiving circuit. The terahertz wave entering the insulator encounters a crack in the insulator, is reflected back to the terahertz chip, enters a terahertz receiving channel, passes through a terahertz low-noise amplifier, and then enters a radio frequency port of a terahertz mixer. The signal is mixed with a terahertz signal coming from the transmitting circuit into the local oscillator port. Because the reflected terahertz wave generates delay after passing through a propagation path, a difference frequency is generated after the reflected terahertz wave is mixed with the terahertz signal of the local oscillator port, as shown in fig. 4. The frequency of the difference frequency is related to the delay of the propagation path, and the longer the path is, the larger the delay is and the higher the difference frequency is. Typically, the frequency difference frequency is in the kHz to MHz range. The difference frequency signal sequentially enters an intermediate frequency amplifier and an analog-to-digital converter and is converted into a digital signal.
The data processing circuit is responsible for extracting frequency information of the digitized difference frequency signals, and calculating the distance between the inside crack of the insulator and the sensor and the crack position according to the following formula:
Wherein D represents the distance from the sensor to the crack, dF represents the difference frequency, T represents the triangular wave period, B represents the operating bandwidth (F2-F1) of the voltage-controlled oscillator, c represents the propagation speed of electromagnetic waves in vacuum, epsilon r represents the relative dielectric constant of the material, and mu r represents the relative magnetic permeability of the material.
In the above chip structure, the circuit having design challenges includes a terahertz amplifier and a terahertz voltage-controlled oscillator.
For terahertz amplifiers, if a III/V group integrated circuit process is adopted, the working frequency can be designed to be 200 to 1000GHz, and the specific working evaluation rate depends on the cost of the manufacturing process. If silicon technology integrated circuits are used, the operating frequency can be designed to be between 100 and 200 GHz. The selection of the operating frequency mainly takes into account the operating bandwidth and the signal-to-noise ratio. The wider working bandwidth is easy to obtain at a high working frequency, so that the distance resolution of the detection crack can be improved, but the worse signal-to-noise ratio is brought about by the higher working frequency, so that the distance accuracy error is increased. The main challenge of circuit design of terahertz amplifiers is gain degradation. Since the transistor operates in the terahertz frequency band, the miller capacitance effect of the transistor can seriously affect the gain of the amplifier, and therefore, a capacitance offset circuit needs to be added between the drain electrode and the grid electrode, so that the gain of the amplifier in the terahertz frequency band is improved. The schematic of the terahertz amplifier circuit recommends the use of a cascode or cascode configuration. As shown in fig. 5, a common source amplifier is taken as an example, and the input end of the amplifier is at the gate, and the output end is at the drain. The compensation circuit feeds the drain output back to the input port using an inductance, or some passive device equivalent to an inductance, including but not limited to a transmission line, a transformer, or a passive device where the input output exhibits an inductance.
For terahertz voltage-controlled oscillators, the main challenges are the operating frequency and the frequency modulation bandwidth.
The solution for the working frequency is as follows: in the terahertz frequency band, the working speed of a transistor is obviously deteriorated and is difficult to be used as an active circuit of an oscillator. For example, the oscillator is designed to be at half the operating frequency, the second harmonic of the oscillator is used as the transmit signal, or the oscillator is designed to be at 1/3 or 1/4 of the operating frequency, and then the third or fourth harmonic is used as the output signal. In order to maintain the output power of the higher harmonics, the invention also introduces the principle of power synthesis, namely, by designing a plurality of higher harmonic signals of one oscillator to work in an in-phase mode and then carrying out in-phase superposition, thereby obtaining higher power. The design of the higher harmonic power synthesis has the advantage that on the one hand the high-speed performance of the transistor at lower frequencies is used to ensure stable operation of the oscillator and on the other hand the output power of the higher harmonics is ensured to be sufficiently large.
The solution for the frequency modulation bandwidth is: the parasitic capacitance effect of the transistor is very obvious, resulting in a significant drop in the specific gravity of the variable capacitance in the total capacitance, and thus the relative frequency modulation bandwidth that it brings begins to drop. The invention provides a technology for improving the frequency modulation bandwidth by combining various frequency modulation technologies, including but not limited to variable capacitance, transistor body voltage frequency modulation, variable inductance and the like.
A terahertz voltage-controlled oscillator will now be described by taking a differential LC voltage-controlled oscillator as an example in conjunction with fig. 6. The whole oscillator is designed into a differential structure, and the oscillation frequency is 1/2 of the output frequency. At the oscillation frequency, the signals at the left and right ends are 180-degree opposite phases; at the second harmonic, the signals at the left and right ends are in phase. The second harmonic signal is output from the center tap of the upper transformer, so that the required terahertz signal power is doubled. Transistors T1 and T2 form a cross-coupled differential structure, and the active circuit portion, which acts as an oscillator, powers the passive resonant circuit. The parasitic capacitance of these two transistors can be adjusted by the pad voltage Vctl 1. Transistors T3 and T4 form two back-to-back variable capacitances by connecting the drain and source, the equivalent capacitance of which can be adjusted by Vctl 2; the differential inductance used to form the resonant circuit is implemented using a transformer with its secondary winding connected to another set of back-to-back variable capacitors (consisting of T5 and T6). When the capacitance of the variable capacitor is adjusted by adjusting Vctl3, the equivalent inductance of the primary coil also changes. The above three techniques are combined to form three frequency control ports Vctl1, vctl2, vctl3. This allows the frequency modulation bandwidths of the three ports to be combined together to form a wider operating bandwidth. In addition, the output frequency is twice of the oscillation frequency, so the frequency modulation range of the oscillation frequency can be doubled on the second harmonic.
Terahertz transmit and receive antennas can be integrated on-chip or inside a chip package, depending on the trade-off of cost and antenna gain. The on-chip antenna has the advantages of low loss of connecting wires, low antenna gain, large chip area and high cost. An off-chip package internal antenna can provide antenna gain, but the assembly cost of the connection lines is high. The design of the antenna is based on conventional antenna types such as monopole, dipole, loop, bow tie, etc.
Through embedding the sensor chip of above-mentioned structure in every insulator inside, this sensor chip realizes terahertz transmission and terahertz echo receipt to judge the position of insulator inside crack distance sensor chip through echo analysis, realize the on-line monitoring to every insulator, monitoring result accessible radio communication returns to electric wire netting control center.
Claims (3)
1. A terahertz sensor chip for insulator monitoring, its characterized in that: comprising the following steps:
A low frequency waveform generator;
The terahertz transmitting circuit is used for transmitting terahertz signals into the insulator;
The terahertz receiving circuit is used for receiving the reflected signal from the inside of the insulator and mixing the reflected signal with the transmitted terahertz signal to obtain a difference frequency signal; digitizing the difference frequency signal to obtain a digitized difference frequency signal;
the data processing circuit is used for extracting frequency information of the digitized difference frequency signals and obtaining the positions of cracks in the insulator based on the frequency information; the position of the internal crack of the insulator is the distance from the internal crack of the insulator to the sensor, and the position of the internal crack of the insulator is calculated according to the following formula:
Wherein D represents the distance from the sensor to the crack, dF represents the difference frequency, T represents the waveform period generated by the low-frequency waveform generator, B represents the working bandwidth of the terahertz voltage-controlled oscillator, c represents the propagation speed of electromagnetic waves in vacuum, epsilon r represents the relative dielectric constant of the material, and mu r represents the relative magnetic permeability of the material;
The terahertz transmitting circuit comprises a terahertz voltage-controlled oscillator, a terahertz amplifier, a terahertz power divider and a terahertz transmitting antenna which are sequentially connected; the output end of the low-frequency waveform generator is connected with the voltage control end of the terahertz voltage-controlled oscillator, one path of output of the terahertz power divider enters the inside of the insulator through the terahertz transmitting antenna, and the other path of output of the terahertz power divider enters the local oscillation port of the terahertz mixer of the terahertz receiving circuit;
the terahertz amplifier adopts a common source amplifier structure, an input end is arranged on a grid electrode, an output end is arranged on a drain electrode, the output of the drain electrode is fed back to the grid electrode by adopting a compensation circuit, and the compensation circuit adopts a passive device with an inductive input end and an inductive output end;
the terahertz voltage-controlled oscillator is of a differential LC voltage-controlled oscillator, the differential LC voltage-controlled oscillator is of a differential structure, the oscillation frequency is 1/2 of the output frequency, and signals at the left end and the right end are 180-degree opposite phases on the oscillation frequency; on the second harmonic, signals at the left end and the right end are in phase, the second harmonic signal is output from a center tap of an upper-end transformer, so that the required terahertz signal power is doubled, a cross-coupled differential structure is formed by a transistor T1 and a transistor T2, an active circuit part serving as an oscillator supplies energy for a passive resonance circuit, parasitic capacitance of the transistor T1 and parasitic capacitance of the transistor T2 are regulated by a pad voltage Vctl1, two back-to-back variable capacitors are formed by connecting a drain electrode and a source electrode of the transistor T3 and the transistor T4, and the equivalent capacitance of the variable capacitors can be regulated by the voltage Vctl 2; the differential inductance used for forming the resonant circuit is realized by a transformer, the secondary coil of the transformer is connected with another group of back-to-back variable capacitors, and when the capacitance value of the variable capacitors is regulated by regulating the voltage Vctl3, the equivalent inductance of the primary coil is also changed; voltage Vctl1, voltage Vctl2, and voltage Vctl3 form three frequency control ports.
2. The terahertz sensor chip for insulator monitoring according to claim 1, wherein: the low-frequency waveform generator is a low-frequency waveform generator for generating periodic triangular waves;
The terahertz receiving circuit comprises a terahertz receiving antenna, a terahertz low-noise amplifier, a terahertz mixer, an intermediate frequency amplifier and an analog-to-digital converter which are connected in sequence; the terahertz receiving antenna is used for receiving a reflected signal reflected by cracks entering the insulator, and the reflected signal enters a radio frequency port of the terahertz mixer after being amplified by the terahertz low-noise amplifier;
the terahertz mixer is used for mixing signals from the radio frequency port and signals from the local oscillator port to generate difference frequency signals;
the difference frequency signal sequentially enters an intermediate frequency amplifier and an analog-to-digital converter to obtain a digitized difference frequency signal;
the data processing circuit is used for extracting frequency information of the digitized difference frequency signals to obtain the positions of cracks in the insulator.
3. An insulator monitoring method is characterized in that: the method comprises the following steps:
step 1: transmitting a terahertz signal into the inside of an insulator by a terahertz sensor chip for insulator monitoring as set forth in any one of claims 1 to 2;
Step2: receiving a reflected signal from the inside of the insulator, and mixing the reflected signal with the transmitted terahertz signal to obtain a difference frequency signal;
Step 3: digitizing the difference frequency signal to obtain a digitized difference frequency signal;
Step 4: extracting frequency information from the digitized difference frequency signal, and calculating to obtain the position of the crack inside the insulator according to the following formula:
wherein D represents the distance from the sensor to the crack, dF represents the difference frequency, T represents the waveform period generated by the low-frequency waveform generator, B represents the working bandwidth of the terahertz voltage-controlled oscillator, c represents the propagation speed of electromagnetic waves in vacuum, epsilon r represents the relative dielectric constant of the material, and mu r represents the relative magnetic permeability of the material.
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| CN202110995296.5A CN113759221B (en) | 2021-08-27 | Terahertz sensor chip for insulator monitoring and insulator monitoring method |
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| CN202110995296.5A CN113759221B (en) | 2021-08-27 | Terahertz sensor chip for insulator monitoring and insulator monitoring method |
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| CN113759221B true CN113759221B (en) | 2024-11-19 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104833955A (en) * | 2015-03-09 | 2015-08-12 | 中国科学院上海微系统与信息技术研究所 | 3mm-waveband small detector front-end |
| CN112525927A (en) * | 2020-11-23 | 2021-03-19 | 赵�衍 | Detection device and detection method for suspension insulator |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104833955A (en) * | 2015-03-09 | 2015-08-12 | 中国科学院上海微系统与信息技术研究所 | 3mm-waveband small detector front-end |
| CN112525927A (en) * | 2020-11-23 | 2021-03-19 | 赵�衍 | Detection device and detection method for suspension insulator |
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