CN113721693B - DrMOS circuit, compensation method of output current of DrMOS circuit and circuit board - Google Patents
DrMOS circuit, compensation method of output current of DrMOS circuit and circuit board Download PDFInfo
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- CN113721693B CN113721693B CN202110886407.9A CN202110886407A CN113721693B CN 113721693 B CN113721693 B CN 113721693B CN 202110886407 A CN202110886407 A CN 202110886407A CN 113721693 B CN113721693 B CN 113721693B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The application discloses a DrMOS circuit and a detection method and a circuit board of main current thereof, and relates to the technical field of DrMOS packaging integration, wherein the compensation method of the output current of the DrMOS circuit comprises the following steps: acquiring a first current of the first inductor; obtaining a second current according to the first current, the resistance value of the first MOS tube and the resistance value of the first resistor; obtaining a current compensation curve according to the temperature coefficient of the first MOS tube and the temperature coefficient of the first resistor; acquiring a first temperature of the first MOS tube; obtaining a compensation current according to the first temperature and the current compensation curve; and obtaining an output current according to the second current and the compensation current. According to the method and the device, the current compensation curve can be set according to different first MOS tubes, and the compensation current is added to accurately control the output current of the DrMOS circuit.
Description
Technical Field
The application relates to the technical field of DrMOS packaging integration, in particular to a DrMOS circuit, a compensation method of output current of the DrMOS circuit and a circuit board.
Background
The DrMOS is a Driver + MOS tube, a driving circuit and the MOS tube are integrated together, so that very low lead resistance and inductance and very strong heat dissipation capability are obtained, and the purpose of realizing power supply conversion by using very high power density is achieved.
The integration of the driving circuit and the MOS transistor in the DrMOS is generally divided into two types. One is monolithic integration, i.e. the driving circuit and the MOS transistor are fabricated on one wafer, which has high requirements for process reliability and high cost. The other is integrated by packaging, the MOS tube adopts a special process, the processing procedure is greatly reduced compared with that of a driving circuit, and the reliability and the cost are obviously reduced.
In the DrMOS, it is necessary to report the value of the current flowing through the MOS transistor to the preceding stage controller. In the monolithic integration of DrMOS, the monolithic integration can be realized by a simple sampling tube; in the package integrated DrMOS, for example, a specially-customized MOS tube, a sampling tube can also be customized in the MOS tube, and the port of the sampling tube is led out to a driving circuit to obtain the expected sampling current. However, in a general package integrated DrMOS, if a general MOS transistor is adopted, a customized sampling transistor does not exist, and it is a great problem how to obtain a sampling current expected by the MOS transistor for output.
Disclosure of Invention
The present application is directed to solving at least one of the problems in the prior art. Therefore, the DrMOS circuit, the compensation method of the output current of the DrMOS circuit and the circuit board are provided, the current compensation curve is set according to different first MOS tubes, and the compensation current is added to accurately control the output current of the DrMOS circuit.
In a first aspect, the present application provides a method for compensating an output current of a DrMOS circuit, the DrMOS circuit including: the detection method comprises the following steps that an anode input end of the amplifier is grounded, a cathode input end of the amplifier is connected with one end of the first resistor and a source electrode of the second MOS tube respectively, an output end of the amplifier is connected with a grid electrode of the second MOS tube, the other end of the first resistor is connected with one end of the first inductor and a drain electrode of the first MOS tube respectively, and a source electrode of the first MOS tube is grounded, and the detection method comprises the following steps:
acquiring a first current of the first inductor;
obtaining a second current according to the first current, the first MOS tube and the first resistor;
obtaining a current compensation curve according to the temperature coefficient of the first MOS tube and the temperature coefficient of the first resistor;
acquiring a first temperature of the first MOS tube;
obtaining a compensation current according to the first temperature and the current compensation curve;
and obtaining an output current according to the second current and the compensation current.
According to the compensation method for the output current of the DrMOS circuit in the embodiment of the first aspect of the application, at least the following beneficial effects are achieved: obtaining a first current I at an inductor L According to the resistance R of the first MOS transistor onL And a first resistor R sns Obtain a second current I s1 Obtaining a current compensation curve according to the temperature coefficient of the first MOS transistor and the temperature coefficient of the first resistor, and obtaining a first temperature T of the first MOS transistor 1 And according to the first temperature T 1 Sum current compensation curve I x (T) obtaining a compensation current I x By compensating current I x For the second current I s1 Performing corresponding compensation to enable DrMOS to output proper output current I s 。
According to some embodiments of the first aspect of the present application, the obtaining a second current according to the first current, the resistance value of the first MOS transistor, and the resistance value of the first resistor includes:
inputting the first current, the resistance value of the first MOS transistor and the resistance value of the first resistor into a preset first calculation formula to obtain a second current, wherein the first calculation formula is as follows:
wherein, I s1 Is a second current, I L Is a first current, R onL Is the resistance value, R, of the first MOS transistor sns Is a function of the resistance of the first resistor and the temperature.
According to some embodiments of the first aspect of the application, the current compensation curve is:
wherein, I x (T) is the current compensation curve, C 0 Is a constant, R onL (T) is a function relation of the resistance value of the first MOS tube and the temperature, R sns (T) is a function of temperature of the resistance of the first resistor.
According to some embodiments of the first aspect of the present application, the obtaining the first temperature of the first MOS transistor includes:
acquiring first voltage at two ends of a source electrode and a drain electrode of the first MOS transistor;
and obtaining the first temperature according to the first voltage.
According to some embodiments of the first aspect of the present application, the output current is calculated by:
I s ＝I s1 ·I x ；
wherein, I s For the output current, I s1 Is the second current, I x Is the compensation current.
According to some embodiments of the first aspect of the present application, the deriving an output current from the second current and the compensation current comprises:
and introducing the second current and the compensation current into a multiplier for processing to obtain output current.
According to some embodiments of the first aspect of the present application, the resistance value of the first MOS transistor is obtained by a preset second calculation formula, where the second calculation formula is:
R onL (T)＝r f ·[α f (T 1 -T 0 )+1]；
wherein r is f Is at T 0 Resistance value of the first MOS transistor at temperature, alpha f Is the first-order temperature coefficient, T, of the first MOS transistor 1 Is the temperature at the first MOS transistor.
According to some embodiments of the first aspect of the present application, the resistance value of the first resistor is obtained by a preset third calculation formula, wherein the third calculation formula:
R sns (T)＝r s ·[α s (T 2 -T 0 )+1]；
wherein r is s Is at T 0 Resistance value of the first resistor at temperature, alpha s Is the first order temperature coefficient, T, of the first resistance 2 Is the temperature at the first MOS transistor.
In a second aspect, the present application further provides a DrMOS circuit, which applies the method for compensating the output current of the DrMOS circuit according to any one of the embodiments of the first aspect.
According to the DrMOS circuit of the second aspect of the present application, at least the following advantages are provided: obtaining a first current I at an inductor L According to the resistance R of the first MOS transistor onL And a first resistor R sns Obtain a second current I s1 Obtaining a current compensation curve according to the temperature coefficient of the first MOS tube and the temperature coefficient of the first resistor, and obtaining a first temperature T of the first MOS tube 1 And according to the first temperature T 1 Sum current compensation curve I x (T)，To obtain a compensation current I x By compensating current I x For the second current I s1 Performing corresponding compensation to enable DrMOS to output proper output current I s 。
In a third aspect, the present application further provides a circuit board, including the DrMOS circuit according to the embodiment of the second aspect.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
Additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic diagram of a DrMOS circuit according to some embodiments of the present application;
fig. 2 is a flowchart of a compensation method for an output current of a DrMOS circuit according to an embodiment of the present application;
fig. 3 is a graph illustrating a current compensation curve of a first MOS transistor of one specification according to an embodiment of the present application;
fig. 4 is a flowchart of a compensation method for output current of a DrMOS circuit according to another embodiment of the present application
Fig. 5 is a line graph of a current compensation curve provided by an embodiment of the present application.
Detailed Description
Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application.
In the description of the present application, it is to be understood that the positional descriptions, such as the directions of up, down, front, rear, left, right, etc., referred to herein are based on the directions or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, and do not indicate or imply that the referred device or element must have a specific direction, be constructed and operated in a specific direction, and thus, should not be construed as limiting the present application.
In the description of the present application, if there are first and second described only for the purpose of distinguishing technical features, it is not understood that relative importance is indicated or implied or that the number of indicated technical features or the precedence of the indicated technical features is implicitly indicated or implied.
In the description of the present application, unless otherwise expressly limited, terms such as set, mounted, connected and the like should be construed broadly, and those skilled in the art can reasonably determine the specific meaning of the terms in the present application by combining the detailed contents of the technical solutions.
In a first aspect, the present application provides a compensation method for an output current of a DrMOS circuit, referring to fig. 1, where the DrMOS circuit includes: the amplifier comprises an amplifier, a first MOS tube, a second MOS tube, a first resistor and a first inductor, wherein the positive input end of the amplifier is grounded, the negative input end of the amplifier is respectively connected with one end of the first resistor and the source electrode of the second MOS tube, the output end of the amplifier is connected with the grid electrode of the second MOS tube, the other end of the first resistor is respectively connected with one end of the first inductor and the drain electrode of the first MOS tube, and the source electrode of the first MOS tube is grounded.
Referring to fig. 2, fig. 2 is a flowchart of a compensation method for an output current of a DrMOS circuit according to an embodiment of the present application, where the detection method includes, but is not limited to, the following steps:
step S110: a first current of the first inductor is obtained.
Step S120: and obtaining a second current according to the first current, the resistance value of the first MOS tube and the resistance value of the first resistor.
Step S130: and obtaining a current compensation curve according to the temperature coefficient of the first MOS tube and the temperature coefficient of the first resistor.
Step S140: and acquiring a first temperature of the first MOS tube.
Step S150: and obtaining a compensation current according to the first temperature and current compensation curve.
Step S160: and obtaining the output current according to the second current and the compensation current.
Obtaining a first current I at an inductor L According to the resistance R of the first MOS transistor onL And a first resistor R sns To obtain a second current I s1 Obtaining a current compensation curve according to the temperature coefficient of the first MOS tube and the temperature coefficient of the first resistor, and obtaining a first temperature T of the first MOS tube 1 And according to the first temperature T 1 Sum current compensation curve I x (T) obtaining a compensation current I x By compensating current I x For the second current I s1 Performing corresponding compensation to enable DrMOS to output proper output current I s 。
Referring to fig. 3, it should be noted that fig. 3 Is a current compensation curve diagram of the first MOS transistor with one specification, the compensation current in the current compensation curve changes with temperature changes, the current compensation curve ix (t) Is appropriately adjusted according to the first MOS transistors with different specifications, and the second current Is1 can be conveniently and accurately temperature compensated without complicated changes, so as to obtain the appropriate output current Is.
It should be noted that the resistance R of the first MOS transistor onL Resistance value R of the first resistor sns There need not be any coefficient relationship.
It is understood that, according to the principle of the amplifier, the voltages of the positive input terminal and the negative input terminal are equal, and the calculation formula of the second current in step S120 is:
wherein, I s1 Is a second current, I L Is a first current, R onL Is the resistance value of the first MOS transistor, R sns Is the resistance value of the first resistor.
It should be noted that the second current I s1 Because of the resistance R of the first MOS tube onL Resistance value R of the first resistor sns Has different temperature coefficients, so that the output current of the DrMOS circuit is accurately controlled by adding the compensation current.
It can be understood that the current compensation curve in step S130 is:
wherein, I x(T) As a current compensation curve, C 0 Is a constant number, R onL (T) is a function relation of the resistance value of the first MOS tube and the temperature, R sns And (T) is a function of the resistance value of the first resistor and the temperature.
It should be noted that, the resistance value R of the first MOS transistor is onL (T) is greatly influenced by temperature, and the resistance value R of the first resistor sns (T) is less affected by temperature, i.e. different compensation currents I need to be generated at different temperatures to obtain stable output current x And a second current I s1 And (6) processing.
The resistance R of the first MOS transistor is onL (T) is greatly influenced by temperature, and the resistance value R of the first resistor sns (T) is less affected by temperature, current compensation curve I x(T) The appropriate adjustment is made according to different specifications of the first MOS transistor, and referring to fig. 5, in one embodiment, the resistance value R of the first MOS transistor onL (T) and resistance value R of the first resistor sns (T) As shown in FIG. 5(a), the resistance values of both change with temperature, C 0 As fitting parameters to be solved, refer to I above x(T) Respectively obtaining R at multiple groups of temperatures onL (T) and R sns (T) and fitting the values of the ratios to corresponding temperatures to form a linear relation curve I x(T) Finally, solving to obtain C corresponding to the first MOS tube 0 Referring to fig. 5(b), which represents the linear relationship curve of the compensation current and the temperature, when the first MOS transistor is changed, only the linear relationship curve I needs to be adjusted x(T) Then, it is able to output a suitable compensation current according to the temperature variation conveniently, and output a stable output current I according to the second current and the compensation current x 。
It is understood that, referring to fig. 4, fig. 4 is a flowchart of a compensation method for an output current of a DrMOS circuit according to another embodiment of the present application, and step S140 includes, but is not limited to, the following steps:
step S210: and acquiring a first voltage at two ends of a source electrode and a drain electrode of the first MOS transistor.
Step S220: and obtaining the first temperature according to the first voltage.
The temperature value can be reflected by the voltage through the cooperation of the ADC converter and the DAC converter, and the conversion mode for obtaining the first temperature and the second temperature is not limited in this application.
It is understood that the output current in step S160 is calculated by:
I s ＝I s1 ·I x ；
wherein, I s For main pipe current, I s1 Is a second current, I x To compensate for the current.
It is understood that step S160 includes, but is not limited to, the following steps:
and introducing the second current and the compensation current into a multiplier for processing to obtain output current.
It can be understood that the formula for calculating the resistance value of the first MOS transistor is as follows:
R onL (T)＝r f ·[α f (T 1 -T 0 )+1]；
wherein r is f Is at T 0 Resistance value of the first MOS transistor at temperature, alpha f Is the first-order temperature coefficient, T, of the first MOS transistor 1 Is the temperature at the first MOS transistor. Wherein r is f And alpha f The specific value of (a) can be obtained by inquiring from the specification instruction manual of the first MOS transistor, and generally, T 0 The temperature is specified to be 25 ℃ and is not limited in the present application.
It is understood that the resistance value calculation formula for the first resistor is:
R sns (T)＝r s ·[α s (T 2 -T 0 )+1]；
wherein r is s Is at T 0 Resistance value of the first resistor at temperature, alpha s Is the first order temperature coefficient of the first resistance, T 2 Is the temperature at the first MOS transistor. Wherein r is s And alpha s The specific value of (A) can be obtained by looking up from the specification instruction manual of the first resistor, generally, T 0 The temperature is specified to be 25 ℃ and is not limited in the present application.
In a second aspect, the present application further provides a DrMOS circuit, which applies the method for compensating the output current of the DrMOS circuit according to any one of the first aspect to obtain the first current I at the inductor L According to the resistance R of the first MOS transistor onL And a first resistor R sns Obtain a second current I s1 Obtaining a current compensation curve according to the temperature coefficient of the first MOS tube and the temperature coefficient of the first resistor, and obtaining a first temperature T of the first MOS tube 1 And according to the first temperature T 1 Sum current compensation curve I x (T) obtaining a compensation current I x By compensating current I x For the second current I s1 Performing corresponding compensation to enable DrMOS to output proper output current I s 。。
In a third aspect, the present application further provides a circuit board, which includes the DrMOS circuit as in the embodiment of the second aspect. Obtaining a first current I at an inductor L According to the resistance R of the first MOS transistor onL And a first resistor R sns To obtain a second current I s1 Obtaining a current compensation curve according to the temperature coefficient of the first MOS tube and the temperature coefficient of the first resistor, and obtaining a first temperature T of the first MOS tube 1 And according to the first temperature T 1 Sum current compensation curve I x (T) obtaining a compensation current I x By compensating the current I x For the second current I s1 Performing corresponding compensation to enable DrMOS to output proper output current I s 。
The embodiments of the present application have been described in detail with reference to the drawings, but the present application is not limited to the embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the spirit of the present application.
Claims (7)
1. A method of compensating for an output current of a DrMOS circuit, the DrMOS circuit comprising: the compensation method comprises the following steps that an anode input end of the amplifier is grounded, a cathode input end of the amplifier is connected with one end of the first resistor and a source electrode of the second MOS tube respectively, an output end of the amplifier is connected with a grid electrode of the second MOS tube, the other end of the first resistor is connected with one end of the first inductor and a drain electrode of the first MOS tube respectively, and a source electrode of the first MOS tube is grounded, and the compensation method comprises the following steps:
acquiring a first current of the first inductor;
obtaining a second current according to the first current, the resistance value of the first MOS tube and the resistance value of the first resistor;
obtaining a current compensation curve according to the temperature coefficient of the first MOS tube and the temperature coefficient of the first resistor;
acquiring a first temperature of the first MOS tube;
obtaining a compensation current according to the first temperature and the current compensation curve;
obtaining an output current according to the second current and the compensation current;
obtaining a second current according to the first current, the resistance value of the first MOS transistor, and the resistance value of the first resistor, including:
inputting the first current, the resistance value of the first MOS transistor and the resistance value of the first resistor into a preset first calculation formula to obtain a second current, wherein the first calculation formula is as follows:
wherein, I s1 Is a second current, I L Is a first current, R onL Is the resistance value, R, of the first MOS transistor sns Is a function of the resistance of the first resistor and the temperature;
the current compensation curve is as follows:
wherein, I x (T) is the current compensation curve, C 0 Is a constant number, R onL (T) is a function relation of the resistance value of the first MOS tube and the temperature, R sns (T) is a function of temperature for the resistance of the first resistor;
the calculation method of the output current comprises the following steps:
I s ＝I s1 ·I x ；
wherein, I s For the output current, I s1 Is the second current, I x Is the compensation current.
2. The method for compensating for the output current of the DrMOS circuit of claim 1, wherein the obtaining the first temperature of the first MOS transistor comprises:
acquiring first voltage at two ends of a source electrode and a drain electrode of the first MOS transistor;
and obtaining the first temperature according to the first voltage.
3. The method for compensating an output current of a DrMOS circuit as claimed in claim 1, wherein said deriving an output current based on said second current and said compensation current comprises:
and introducing the second current and the compensation current into a multiplier for processing to obtain output current.
4. The DrMOS circuit output current compensation method as claimed in claim 1, wherein the resistance of the first MOS transistor is obtained by a predetermined second calculation formula, wherein the second calculation formula is:
R onL (T)＝r f ·[α f (T 1 -T 0 )+1]；
wherein r is f Is at T 0 Resistance value of the first MOS transistor at temperature, alpha f Is the first order temperature coefficient, T, of the first MOS transistor 1 Is the temperature at the first MOS transistor, T 0 Is a preset standard temperature.
5. The DrMOS circuit output current compensation method of claim 1, wherein the resistance value of the first resistor is obtained by a preset third calculation formula, wherein the third calculation formula is:
R sns (T)＝r s ·[α s (T 2 -T 0 )+1]；
wherein r is s Is at T 0 Resistance value of the first resistor at temperature, alpha s Is the first order temperature coefficient, T, of the first resistance 2 Is the temperature at the first MOS transistor, T 0 Is a preset standard temperature.
6. A DrMOS circuit, characterized in that the method of compensation of the output current of a DrMOS circuit according to any of claims 1 to 5 is applied.
7. A wiring board comprising the DrMOS circuit of claim 6.
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| CN103259407A (en) * | 2008-08-15 | 2013-08-21 | 立锜科技股份有限公司 | Multifunctional drmos |
| CN103812341A (en) * | 2011-01-31 | 2014-05-21 | 立锜科技股份有限公司 | Adaptive temperature compensation circuit and method |
| CN108664070A (en) * | 2017-04-01 | 2018-10-16 | 华大半导体有限公司 | Low-power consumption temperature compensated current source circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US12009687B2 (en) * | 2019-10-12 | 2024-06-11 | Intel Corporation | Apparatus and method to provide dynamic battery charging voltage |
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|---|---|---|---|---|
| EP0614136A1 (en) * | 1993-03-04 | 1994-09-07 | Alcatel Bell-Sdt S.A. | Power supply shunt regulator |
| CN101335487A (en) * | 2001-12-14 | 2008-12-31 | 英特赛尔美国股份有限公司 | Apparatus, power source and method providing continuous temperature compensation for dc-dc converter |
| CN101651413A (en) * | 2008-08-15 | 2010-02-17 | 立锜科技股份有限公司 | Multifunctional drmos |
| CN103259407A (en) * | 2008-08-15 | 2013-08-21 | 立锜科技股份有限公司 | Multifunctional drmos |
| CN103812341A (en) * | 2011-01-31 | 2014-05-21 | 立锜科技股份有限公司 | Adaptive temperature compensation circuit and method |
| CN108664070A (en) * | 2017-04-01 | 2018-10-16 | 华大半导体有限公司 | Low-power consumption temperature compensated current source circuit |
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