CN113618497A - Polishing liquid for polishing microcrystalline ceramic and microcrystalline ceramic polishing method - Google Patents
Polishing liquid for polishing microcrystalline ceramic and microcrystalline ceramic polishing method Download PDFInfo
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- CN113618497A CN113618497A CN202110780677.1A CN202110780677A CN113618497A CN 113618497 A CN113618497 A CN 113618497A CN 202110780677 A CN202110780677 A CN 202110780677A CN 113618497 A CN113618497 A CN 113618497A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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Abstract
The invention relates to a polishing solution for polishing microcrystalline ceramics and a microcrystalline ceramic polishing method. The raw materials of the polishing solution for polishing the microcrystalline ceramic comprise 30-50% of abrasive, 1-5% of dispersing agent, 2-5% of alkali and 40-67% of water in percentage by mass, wherein the abrasive is at least one of alumina, silicon oxide and silicon carbide. The polishing solution can effectively balance the grinding speed of the microcrystalline phase and the glass phase of the microcrystalline ceramic in the polishing process, so that the grinding speed of the microcrystalline phase and the glass phase is close to or even equal to each other, the grinding consistency of the microcrystalline phase and the glass phase can be effectively improved, the risk of pits appearing on the surface of the microcrystalline ceramic in the polishing process is greatly reduced, the roughness of the surface of the microcrystalline ceramic is effectively reduced, and the surface of the microcrystalline ceramic is smoother.
Description
Technical Field
The invention relates to the technical field of material polishing, in particular to polishing solution for polishing microcrystalline ceramics and a microcrystalline ceramic polishing method.
Background
The microcrystalline ceramic is a complex phase material with a microcrystalline phase and a glass phase, has double properties of ceramic and glass, has better processing performance compared with ceramic, and has the advantages of high hardness, good mechanical property, low thermal expansion coefficient and the like compared with glass.
During use, the microcrystalline ceramic often needs to be polished correspondingly to obtain a smoother surface. However, when the conventional polishing solution is used to polish the microcrystalline ceramic, pits are likely to appear on the surface of the microcrystalline ceramic, which shows high roughness, and it is difficult to obtain the microcrystalline ceramic with a smooth surface.
Disclosure of Invention
Based on this, it is necessary to provide a polishing liquid and a polishing method capable of effectively reducing the surface roughness of the microcrystalline ceramic.
In order to solve the technical problems, the technical scheme of the invention is as follows:
the polishing solution for polishing the microcrystalline ceramic comprises the following raw materials in percentage by mass:
the abrasive is at least one of alumina, silicon oxide and silicon carbide.
In one embodiment, the abrasive has a particle size of W0.05-W30.
A method of polishing microcrystalline ceramics comprising the steps of:
and (2) polishing the microcrystalline ceramic by using a hard polishing medium and the polishing solution in any one of the embodiments, wherein the absolute value of the change rate of the hardness of the hard polishing medium relative to the hardness of the microcrystalline ceramic is less than or equal to 20%.
In one embodiment, the hard polishing media is a cast iron polishing media, a cast aluminum polishing media, a cast tin polishing media, a copper polishing media, or a ceramic polishing media.
In one embodiment, the particle size of the abrasive in the polishing solution is W0.05-W1;
and/or the roughness of the polished surface of the hard polishing medium is 1 nm-100 nm.
In one embodiment, the polishing speed is controlled to be 200rpm to 800 rpm;
and/or controlling the polishing pressure to be 0.1 MPa-0.8 MPa.
In one embodiment, the polishing process for the microcrystalline ceramic further comprises the following steps:
and performing fine polishing treatment on the microcrystalline ceramic to ensure that the surface roughness of the microcrystalline ceramic is 0.08-0.2 mu m.
In one embodiment, the microcrystalline ceramic is subjected to fine polishing treatment by using a hard fine polishing medium and the polishing solution in any one of the above embodiments, wherein the grain size of an abrasive in the polishing solution is W1-W5, and the roughness of a fine polishing surface of the fine polishing medium is 0.1-1 μm.
In one embodiment, the method further comprises the following steps before the fine polishing treatment of the microcrystalline ceramic:
and performing rough polishing treatment on the microcrystalline ceramic to ensure that the surface roughness of the microcrystalline ceramic is 0.4-0.8 mu m.
In one embodiment, the microcrystalline ceramic is subjected to rough polishing treatment by using a hard rough polishing medium and the polishing solution in any one of the above embodiments, wherein the granularity of the abrasive in the polishing solution is W10-W30, and the roughness of the rough polishing surface of the rough polishing medium is 1-10 μm.
The raw materials of the polishing solution for polishing the microcrystalline ceramic comprise 30-50% of abrasive, 1-5% of dispersing agent, 2-5% of alkali and 40-67% of water in percentage by mass, wherein the abrasive is at least one of alumina, silicon oxide and silicon carbide. Adopt above-mentioned polishing solution can effectively balance the grinding speed of microcrystalline ceramic's microcrystalline phase and glass phase at polishing in-process, make microcrystalline phase and glass phase's grinding speed be close even equal, can effectively improve the uniformity of the grinding of microcrystalline phase and glass phase like this, the risk of pit appears in greatly reduced polishing in-process microcrystalline ceramic surface, effectively reduces microcrystalline ceramic surface's roughness, makes microcrystalline ceramic's surface more smooth.
In the microcrystalline ceramic polishing method, the microcrystalline ceramic is polished by adopting the hard polishing medium and the polishing solution, wherein the absolute value of the change rate of the hardness of the hard polishing medium relative to the hardness of the microcrystalline ceramic is less than or equal to 20%. The polishing solution and the polishing medium with the hardness of less than or equal to 20% of the absolute value of the change rate of the hardness of the microcrystalline ceramic are used for polishing the microcrystalline ceramic, so that the grinding speeds of a microcrystalline phase and a glass phase can be well balanced, the surface roughness of the microcrystalline ceramic is effectively reduced, and the surface of the microcrystalline ceramic can show a mirror surface effect. Meanwhile, the surface flatness of the microcrystalline ceramic product can be effectively improved by polishing the microcrystalline ceramic by adopting the method. Further, the polishing method is adopted to polish the microcrystalline ceramic, so that the polishing efficiency can be effectively improved, and the roughness of the surface of the microcrystalline ceramic is reduced to a small value in a short time.
Detailed Description
The present invention will be described in detail with reference to the following embodiments in order to make the aforementioned objects, features and advantages of the invention more comprehensible. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
An embodiment of the present invention provides a polishing liquid for polishing a microcrystalline ceramic. The polishing solution comprises the following raw materials in percentage by mass: 30-50% of abrasive, 1-5% of dispersant, 2-5% of alkali and 40-67% of water. The abrasive is at least one of alumina, silicon oxide and silicon carbide. Adopt above-mentioned polishing solution can effectively balance the grinding speed of microcrystalline ceramic's microcrystalline phase and glass phase at polishing in-process, make microcrystalline phase and glass phase's grinding speed be close even equal, can effectively improve the uniformity of the grinding of microcrystalline phase and glass phase like this, the risk of pit appears in greatly reduced polishing in-process microcrystalline ceramic surface, effectively reduces microcrystalline ceramic surface's roughness, makes microcrystalline ceramic's surface more smooth.
Alternatively, as some specific examples of the mass percentage of the abrasive, the mass percentage of the abrasive may be, but is not limited to, 30%, 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39%, 40%, 41%, 42%, 43%, 44%, 45%, 46%, 47%, 48%, 49%, or 50%. The mass percent of the dispersant may be, but is not limited to, 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, or 5%. The mass percentage of the base may be, but is not limited to, 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, or 5%. The mass percentage of water may be, but is not limited to, 40%, 42%, 45%, 47%, 50%, 52%, 55%, 57%, 60%, 62%, 65%, or 67%.
It is understood that the abrasive, dispersant, base, and water can be selected and combined within the respective mass percent ranges or in any of the respective mass percentages listed above.
It is also understood that the silicon oxide is silicon monoxide and/or silicon dioxide. Preferably, the silicon oxide is silicon dioxide.
Further, alumina, silica and silicon carbide all have high hardness. Optionally, the Mohs hardness of the aluminum oxide is 8.5-8.9, the Mohs hardness of the silicon oxide is 6.8-7.5, and the Mohs hardness of the silicon carbide is 8.8-9.5. As some hardness options for alumina, silica, and silicon carbide, the hardness of alumina may be, but is not limited to, 8.5, 8.6, 8.7, 8.8, 8.9, and the like. The hardness of the silicon oxide may be, but is not limited to, 6.8, 6.9, 7.0, 7.1, 7.2, 7.3, 7.4, 7.5, and the like. The hardness of the silicon carbide may be, but is not limited to, 8.8, 8.9, 9.0, 9.1, 9.2, 9.3, 9.4, 9.5, and the like.
It is also understood that when the mass percentages of abrasive, dispersant, and base are selected, the balance is water, such that the sum of the mass percentages of abrasive, dispersant, base, and water is 100%. The polishing solution for polishing the microcrystalline ceramic is prepared from the following raw materials in percentage by mass: 30-50% of abrasive, 1-5% of dispersing agent, 2-5% of alkali and 40-67% of water, wherein the abrasive is at least one of alumina, silicon oxide and silicon carbide. Or the polishing solution for polishing the microcrystalline ceramic is prepared from the following raw materials in percentage by mass: 30-50% of abrasive, 1-5% of dispersing agent, 2-5% of alkali and the balance of water, wherein the abrasive is at least one of alumina, silicon oxide and silicon carbide.
In a specific example, as a method for preparing a polishing liquid for polishing a microcrystalline ceramic, it comprises the steps of: preparing materials according to 30-50% of grinding material, 1-5% of dispersing agent, 2-5% of alkali and 40-67% of water; mixing the above materials. The polishing solution for polishing the microcrystalline ceramic is obtained by uniformly mixing the raw materials meeting the mass percentage, and the preparation method is simple and easy to implement and is suitable for industrial popularization.
In a preferred example, the abrasive has a particle size of W0.05 to W30. Alternatively, the particle size of the abrasive may be, but is not limited to, W0.05, W0.1, W0.5, W1, W2, W5, W8, W10, W12, W15, W18, W20, W22, W25, W28, W30. Specifically, as one particle size range of the abrasive, the particle size of the abrasive is W10 to W30. As another particle size range of the abrasive, the particle size of the abrasive is W1 to W5. As another particle size range of the abrasive, the particle size of the abrasive is W0.05 to W1. In the actual polishing process, an abrasive of an appropriate particle size may be selected according to the surface roughness of the microcrystalline ceramic. For example, in the rough polishing stage, the abrasive with larger grain size can be selected to form the polishing solution to perform the rough polishing on the microcrystalline ceramic, and in this case, the abrasive with the grain size of W10-W30 can be selected. In the fine polishing stage, the abrasive with moderate granularity can be selected to form polishing solution to perform rough polishing on the microcrystalline ceramic, and the abrasive with the granularity of W1-W5 can be selected. In the fine polishing stage, the abrasive with smaller granularity can be selected to form polishing solution to perform fine polishing on the microcrystalline ceramic, and the abrasive with the granularity of W0.05-W1 can be selected.
It will be appreciated that W in the range of W0.05 to W30 represents a conventional method of metering the particle size of the material particles.
Optionally, the base is sodium hydroxide and/or potassium hydroxide. The polishing effect of the polishing solution on the microcrystalline ceramics can be promoted by adding the alkali, and the polishing efficiency is improved. Optionally, the dispersant is at least one of ammonium polyacrylate, sodium hexametaphosphate, polyethylene glycol, sodium dodecyl sulfate, and carboxymethyl cellulose.
In a specific example, the pH value of the polishing solution is 11-14. At the moment, the polishing liquid is more favorable for polishing the microcrystalline ceramics, and the polishing effect is improved. After the polishing solution is prepared from the raw materials, the pH value of the polishing solution can be controlled within the range of 11-14 through the selection of the percentage of the raw materials. It can be understood that, after the polishing solution is obtained by using the raw materials in corresponding mass percentages, the pH value of the polishing solution can also be adjusted to be in the range of 11-14 through the use of the pH adjusting agent. Preferably, the pH value of the polishing solution is 11-12. Specifically, the pH of the polishing solution may be, but is not limited to, 11, 11.1, 11.2, 11.3, 11.4, 11.5, 11.6, 11.7, 11.8, 11.9, 12, 12.1, 12.2, 12.3, 12.4, 12.5, 12.6, 12.7, 12.8, 12.9, 13, 13.1, 13.2, 13.3, 13.4, 13.5, 13.6, 13.7, 13.8, 13.9.
Yet another embodiment of the present invention provides a method of polishing a microcrystalline ceramic. The polishing method of the microcrystalline ceramic comprises the following steps: and polishing the microcrystalline ceramic by using the hard polishing medium and the polishing solution, wherein the absolute value of the change rate of the hardness of the hard polishing medium relative to the hardness of the microcrystalline ceramic is less than or equal to 20%.
In the microcrystalline ceramic polishing method of the embodiment, the polishing liquid and the polishing medium with the hardness of which the absolute value of the change rate of the hardness relative to the hardness of the microcrystalline ceramic is less than or equal to 20% are used for polishing the microcrystalline ceramic, so that the grinding speeds of a microcrystalline phase and a glass phase can be well balanced, the surface roughness of the microcrystalline ceramic can be effectively reduced, and the surface of the microcrystalline ceramic can show a mirror surface effect. Meanwhile, the surface flatness of the microcrystalline ceramic product can be effectively improved by polishing the microcrystalline ceramic by adopting the method. Further, the polishing method is adopted to polish the microcrystalline ceramic, so that the polishing efficiency can be effectively improved, and the roughness of the surface of the microcrystalline ceramic is reduced to a small value in a short time.
It is understood that the rate of change of the hardness of the hard polishing medium relative to the hardness of the microcrystalline ceramic represents a correlation between the hardness of the hard polishing medium and the hardness of the microcrystalline ceramic, and is calculated by: where v represents a rate of change in hardness of the hard polishing medium relative to the hardness of the microcrystalline ceramic, x represents the hardness of the hard polishing medium, and y represents the hardness of the microcrystalline ceramic.
Further, the absolute value of the rate of change of the hardness of the hard polishing medium relative to the hardness of the microcrystalline ceramic is less than or equal to 15%. Still further, the hard polishing medium has a rate of change of hardness relative to the hardness of the microcrystalline ceramic that is less than or equal to 10% absolute. Still further, the hard polishing medium has a rate of change of hardness relative to the hardness of the microcrystalline ceramic that is less than or equal to 5% absolute. Still further, the hard polishing medium has a rate of change of hardness relative to the hardness of the microcrystalline ceramic that is less than or equal to 2% absolute.
In one specific example, the hard polishing medium has a hardness of 800kgf/mm2～1500kgf/mm2. For example, the hardness of the hard polishing medium can be, but is not limited to, 800kgf/mm2、900kgf/mm2、1000kgf/mm2、1100kgf/mm2、1200kgf/mm2、1300kgf/mm2、1400kgf/mm2Or 1500kgf/mm2. It will be appreciated that in selecting a hard polishing medium, a hard polishing medium of a corresponding hardness can be selected based on the hardness of the microcrystalline ceramic and the rate of change of the hardness of the hard polishing medium relative to the hardness of the microcrystalline ceramic. Preferably, the hardness of the hard polishing medium is greater than or equal to the hardness of the microcrystalline ceramic. It is further preferred that the hardness of the hard polishing medium is close to the hardness of the microcrystalline ceramic. More preferably still, the first and second liquid crystal compositions are,the hardness of the hard polishing medium is equal to the hardness of the microcrystalline ceramic.
As some specific choices of the hard polishing medium, the hard polishing medium is a cast iron polishing medium, a cast aluminum polishing medium, a cast tin polishing medium, a copper polishing medium, or a ceramic polishing medium. The ceramic polishing medium may be one formed of at least one ceramic material such as zirconia, alumina, silicon nitride, etc.
Preferably, the particle size of the abrasive in the polishing solution is W0.05-W1. At this time, the microcrystalline ceramic having a surface roughness of 0.1 μm or less can be obtained by polishing. Preferably, the microcrystalline ceramic having a surface roughness of 0.01 μm to 0.1 μm can be obtained by polishing.
Further, the roughness of the polished surface of the hard polishing medium is 1nm to 100 nm. The polishing solution is obtained through the grinding materials with proper granularity, and the hard polishing medium with proper roughness is matched, so that the polishing effect on the microcrystalline ceramic can be further improved, the surface roughness of the microcrystalline ceramic is further reduced, and the surface of the microcrystalline ceramic presents a mirror surface effect. It is understood that the polishing surface of the polishing medium refers to the surface of the polishing medium that is in contact with the microcrystalline ceramic. Optionally, the polishing surface of the hard polishing medium has a roughness of 1nm, 5nm, 8nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, 55nm, 60nm, 65nm, 70nm, 75nm, 80nm, 85nm, 90nm, or 100 nm. Preferably 1nm to 50 nm.
In a specific example, in an actual polishing process, the polishing rotation speed is controlled to be 200rpm to 800rpm and/or the polishing pressure is controlled to be 0.1MPa to 0.8 MPa. Alternatively, the polishing rotational speed may be controlled to 200rpm, 300rpm, 400rpm, 500rpm, 600rpm, 700rpm, or 800 rpm. The polishing pressure may be controlled to 0.1MPa, 0.15MPa, 0.2MPa, 0.25MPa, 0.3MPa, 0.35MPa, 0.4MPa, 0.45MPa, 0.5MPa, 0.55MPa, 0.6MPa, 0.65MPa, 0.7MPa, 0.75MPa or 0.8 MPa. It is understood that the polishing rotational speed represents the relative rotational speed of the polishing medium and the microcrystalline ceramic. For example, the microcrystalline ceramic may be held stationary and the rotational speed of the polishing medium may be adjusted during polishing. The polishing medium can also be controlled to be fixed, and the rotating speed of the microcrystalline ceramic can be adjusted. It is also possible to move both the polishing medium and the microcrystalline ceramic.
Further, the polishing time is controlled to be 10 min-30 min. Alternatively, the polishing time may be, but is not limited to, 10min, 12min, 15min, 18min, 20min, 22min, 25min, 28min, or 30 min.
Preferably, the polishing treatment of the microcrystalline ceramic further comprises the following steps: and performing fine polishing treatment on the microcrystalline ceramic to ensure that the surface roughness of the microcrystalline ceramic is 0.08-0.2 mu m. The polishing effect of the microcrystalline ceramic can be further improved by keeping the surface roughness of the microcrystalline ceramic at a relatively small value through fine polishing treatment. Optionally, the microcrystalline ceramic is subjected to a fine polishing treatment so that the surface roughness of the microcrystalline ceramic is 0.08 μm, 0.09 μm, 0.1 μm, 0.11 μm, 0.12 μm, 0.13 μm, 0.14 μm, 0.15 μm, 0.16 μm, 0.17 μm, 0.18 μm, 0.19 μm, or 0.2 μm.
Further preferably, the microcrystalline ceramic is subjected to fine polishing treatment by using a hard fine polishing medium and the polishing solution, wherein the granularity of an abrasive in the polishing solution is W1-W5, and the roughness of a fine polishing surface of the fine polishing medium is 0.1-1 μm. It is understood that the polishing surface of the fine polishing medium means a surface of the fine polishing medium which is in contact with the microcrystalline ceramic. Alternatively, the roughness of the fine polished surface of the fine polishing medium is 0.1 μm, 0.2 μm, 0.3 μm, 0.4 μm, 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm, or 1 μm.
As a plurality of specific choices of hard fine polishing media, the hard fine polishing media are cast iron polishing media, cast aluminum polishing media, cast tin polishing media, copper polishing media or ceramic polishing media. The ceramic polishing medium may be one formed of at least one ceramic material such as zirconia, alumina, silicon nitride, etc.
More preferably, the fine polishing rotating speed is controlled to be 200 rpm-800 rpm and/or the fine polishing pressure is controlled to be 0.1 MPa-0.8 MPa. Alternatively, the fine polishing rotation speed may be controlled to 200rpm, 300rpm, 400rpm, 500rpm, 600rpm, 700rpm, or 800 rpm. The fine throwing pressure can be controlled to be 0.1MPa, 0.15MPa, 0.2MPa, 0.25MPa, 0.3MPa, 0.35MPa, 0.4MPa, 0.45MPa, 0.5MPa, 0.55MPa, 0.6MPa, 0.65MPa, 0.7MPa, 0.75MPa or 0.8 MPa.
It is still further preferred that the first and second substrates are,the hardness of the hard fine polishing medium is 800kgf/mm2～1500kgf/mm2. For example, the hardness of the hard fine polishing medium may be, but is not limited to, 800kgf/mm2、900kgf/mm2、1000kgf/mm2、1100kgf/mm2、1200kgf/mm2、1300kgf/mm2、1400kgf/mm2Or 1500kgf/mm2。
Specifically, the fine polishing time is controlled to be 5-25 min. Alternatively, the fine polishing time may be, but is not limited to, 5min, 8min, 10min, 12min, 15min, 18min, 20min, 22min, or 25 min.
In a specific example, the method further comprises the following steps before the fine polishing treatment of the microcrystalline ceramic: and performing rough polishing treatment on the microcrystalline ceramic to ensure that the surface roughness of the microcrystalline ceramic is 0.4-0.8 mu m. The surface roughness of the microcrystalline ceramic is kept at a proper value through rough polishing treatment, so that the polishing effect of the microcrystalline ceramic can be further improved. Optionally, the microcrystalline ceramic is subjected to rough polishing treatment so that the surface roughness of the microcrystalline ceramic is 0.4 μm, 0.45 μm, 0.5 μm, 0.55 μm, 0.6 μm, 0.65 μm, 0.7 μm, 0.75 μm, or 0.8 μm.
Further, the microcrystalline ceramics are subjected to rough polishing treatment by adopting a hard rough polishing medium and the polishing solution, wherein the granularity of an abrasive in the polishing solution is W10-W30, and the roughness of the rough polishing surface of the rough polishing medium is 1-10 mu m. It is understood that the polishing surface of the rough polishing medium represents the surface of the fine polishing medium that contacts the microcrystalline ceramic. Optionally, the roughness of the fine polishing surface of the rough polishing medium is 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, or 10 μm.
The hard rough polishing medium is selected from cast iron polishing medium, cast aluminum polishing medium, cast tin polishing medium, copper polishing medium or ceramic polishing medium. The ceramic polishing medium may be one formed of at least one ceramic material such as zirconia, alumina, silicon nitride, etc.
Further, the rough polishing rotating speed is controlled to be 200 rpm-800 rpm and/or the rough polishing pressure is controlled to be 0.1 MPa-0.8 MPa. Alternatively, the rough polishing rotational speed may be controlled to 200rpm, 300rpm, 400rpm, 500rpm, 600rpm, 700rpm, or 800 rpm. The rough polishing pressure can be controlled to be 0.1MPa, 0.15MPa, 0.2MPa, 0.25MPa, 0.3MPa, 0.35MPa, 0.4MPa, 0.45MPa, 0.5MPa, 0.55MPa, 0.6MPa, 0.65MPa, 0.7MPa, 0.75MPa or 0.8 MPa.
Further, the hard rough polishing medium has a hardness of 800kgf/mm2～1500kgf/mm2. For example, the hardness of the hard rough polishing medium may be, but is not limited to, 800kgf/mm2、900kgf/mm2、1000kgf/mm2、1100kgf/mm2、1200kgf/mm2、1300kgf/mm2、1400kgf/mm2Or 1500kgf/mm2。
Specifically, the rough polishing time is controlled to be 5 min-10 min. Alternatively, the rough polishing time may be, but is not limited to, 5min, 6min, 7min, 8min, 9min, or 10 min.
It will be appreciated that grooves may be provided in the polishing medium, the fine polishing medium and the coarse polishing medium to channel away the slurry and debris generated during the polishing process. Specifically, the width of the groove is 0.5mm to 2 mm. Alternatively, the width of the groove may be 0.5mm, 0.6mm, 0.7mm, 0.8mm, 0.9mm, 1mm, 1.1mm, 1.2mm, 1.3mm, 1.4mm, 1.5mm, 1.6mm, 1.7mm, 1.8mm, 1.9mm or 2 mm.
It will also be appreciated that the microcrystalline ceramic may be cleaned after each polishing to remove impurities from the surface of the microcrystalline ceramic. Specifically, the microcrystalline ceramic may be cleaned after rough polishing, fine polishing, and finish polishing.
In still another embodiment of the present invention, there is provided a method of polishing a microcrystalline ceramic, including the steps of:
s101: the microcrystalline ceramics are subjected to rough polishing treatment by adopting a hard rough polishing medium and polishing solution, the granularity of an abrasive in the polishing solution is W10-W30, and the roughness of the rough polishing surface of the rough polishing medium is 1-10 mu m. The rough polishing treatment makes the surface roughness of the microcrystalline ceramic be 0.4-0.8 μm. The rough polishing rotating speed is controlled to be 200 rpm-800 rpm. The rough polishing pressure is controlled to be 0.1 MPa-0.8 MPa. The rough polishing time is controlled to be 5 min-10 min. The rough polishing treatment can ensure that the surface roughness of the microcrystalline ceramic is 0.4-0.8 mu m.
S102: and carrying out fine polishing treatment on the roughly polished microcrystalline ceramic by using a hard fine polishing medium and polishing liquid, wherein the granularity of an abrasive in the polishing liquid is W1-W5, and the roughness of a fine polishing surface of the fine polishing medium is 0.1-1 mu m. The fine polishing rotating speed is controlled to be 200 rpm-800 rpm. The fine polishing pressure is controlled to be 0.1 MPa-0.8 MPa. And controlling the fine polishing time to be 5-25 min. The fine polishing treatment can make the surface roughness of the microcrystalline ceramic be 0.08-0.2 μm.
S103: and (3) polishing the finely polished microcrystalline ceramic by using a hard polishing medium and polishing liquid, wherein the granularity of the abrasive in the polishing liquid is W0.05-W1, and the roughness of the polished surface of the polishing medium is 10-50 nm. The polishing rotating speed is controlled to be 200 rpm-800 rpm. The polishing pressure is controlled to be 0.1MPa to 0.8 MPa. The polishing time is controlled to be 10 min-30 min.
The following are specific examples.
Example 1
The polishing solution in this embodiment is divided into a rough polishing solution, a fine polishing solution, and a fine polishing solution. And during polishing, the microcrystalline ceramic is polished by using the rough polishing solution, the fine polishing solution and the fine polishing solution in sequence. The polishing medium during rough polishing is a cast iron disc with the roughness of the polishing surface of 1-10 mu m. The polishing medium during fine polishing is a cast iron disc with the polishing surface roughness of 0.1-1 mu m. The polishing medium during the fine polishing is a cast iron disc with the polishing surface roughness of 1 nm-100 nm.
The raw materials in the rough polishing solution comprise the following components in percentage by mass: 35% of alumina, 1% of ammonium polyacrylate, 4% of potassium hydroxide and the balance of water, wherein the particle size of the alumina is W18. The fine polishing solution comprises the following raw materials in percentage by mass: 35% of alumina, 1% of ammonium polyacrylate, 4% of potassium hydroxide and the balance of water, wherein the particle size of the alumina is W3. The fine polishing solution comprises the following raw materials in percentage by mass: 35% of alumina, 1% of ammonium polyacrylate, 4% of potassium hydroxide and the balance of water, wherein the particle size of the alumina is W0.5. The hardness of the alumina was 8.8.
The polishing method in this example was:
s201: and performing rough polishing treatment on the microcrystalline ceramic by adopting a rough polishing medium and a rough polishing solution. The rough polishing rotating speed is controlled to be 400 rpm-600 prm. The rough polishing pressure is controlled to be 0.3MPa to 0.6 MPa. The rough polishing time is controlled to be 8 min. The rough polishing treatment makes the surface roughness of the microcrystalline ceramic be 0.4-0.8 μm.
S202: and carrying out fine polishing treatment on the roughly polished microcrystalline ceramic by adopting a fine polishing medium and a fine polishing solution. The fine polishing rotating speed is controlled to be 400 rpm-600 prm. The fine polishing pressure is controlled to be 0.3MPa to 0.6 MPa. And controlling the fine polishing time to be 15 min. The surface roughness of the microcrystalline ceramic is 0.08-0.2 μm by fine polishing treatment.
S203: and polishing the finely polished microcrystalline ceramic by adopting a fine polishing medium and a fine polishing solution. The polishing speed is controlled to be 400 rpm-600 prm. The polishing pressure is controlled to be 0.3MPa to 0.6 MPa. The polishing time is controlled to be 20 min.
S204: and cleaning the microcrystalline ceramic after the fine polishing treatment to obtain the target microcrystalline ceramic of the embodiment.
Example 2
Example 2 differs from example 1 in that the abrasive is silica. The hardness of the silicon oxide was 7.0.
Example 3
Example 2 differs from example 1 in that the abrasive is silicon carbide. The hardness of the silicon carbide was 9.5.
Comparative example 1
Comparative example 1 is different from example 1 in that the fine polishing medium is replaced with a polyurethane polishing pad in S203. And controlling the fine polishing time to be 180 min.
Comparative example 2
Comparative example 2 is different from example 1 in that alumina having a particle size of W0.5 in the finishing polishing liquid is replaced with cerium oxide having a particle size of W0.5, and the finishing polishing medium is replaced with a polyurethane polishing pad in S203. And controlling the fine polishing time to be 500 min.
Comparative example 3
The comparative example 3 is different from the example 1 in that the step S202 is removed and the fine polishing time is controlled to 240 min.
Test example
The target microcrystalline ceramics obtained in example 1 and comparative examples 1 to 3 were subjected to surface roughness and surface flatness tests, respectively, and the results are shown in the following table.
| Sample (I) | Roughness Ra/mum | Flatness/μm | Fine polishing time/min |
| Example 1 | 0.015 | 0.12 | 20 |
| Example 2 | 0.016 | 0.13 | 30 |
| Example 3 | 0.015 | 0.13 | 16 |
| Comparative example 1 | 0.036 | 0.56 | 180 |
| Comparative example 2 | 0.077 | 0.80 | 500 |
| Comparative example 3 | 0.018 | 0.15 | 240 |
From the results in the above table, the microcrystalline ceramics in examples 1 to 3 have small surface roughness and good flatness, and the fine polishing time is short. The hardness of the abrasives in examples 1 to 3 was different from each other, so that the polishing efficiency was slightly different. The smaller abrasive particle size allows the final polishing effect to be close. Comparison between examples 1 to 3 and comparative examples 1 and 2 shows that in the fine polishing process in examples 1 to 3, better polishing effect can be obtained by using alumina, silica and silicon carbide as the abrasive than by using cerium oxide as the abrasive, and better polishing effect can be obtained by using a hard medium for fine polishing than a polyurethane polishing pad. Although the comparative example 3 achieved a good polishing effect, the polishing time was significantly increased as compared with example 1.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the patent of the invention is subject to the appended claims, and the description can be used for explaining the contents of the claims.
Claims (10)
1. The polishing solution for polishing the microcrystalline ceramic is characterized by comprising the following raw materials in percentage by mass:
the abrasive is at least one of alumina, silicon oxide and silicon carbide.
2. The polishing solution according to claim 1, wherein the abrasive has a particle size of W0.05 to W30.
3. A polishing method of microcrystalline ceramics is characterized by comprising the following steps:
polishing a microcrystalline ceramic by using a hard polishing medium and the polishing liquid according to any one of claims 1 to 2, wherein the absolute value of the rate of change in hardness of the hard polishing medium with respect to the hardness of the microcrystalline ceramic is 20% or less.
4. The method of polishing microcrystalline ceramic according to claim 3 wherein the hard polishing media is cast iron polishing media, cast aluminum polishing media, cast tin polishing media, copper polishing media or ceramic polishing media.
5. The method for polishing microcrystalline ceramic according to claim 3, wherein the particle size of the abrasive in the polishing liquid is W0.05-W1;
and/or the roughness of the polished surface of the hard polishing medium is 1 nm-100 nm.
6. The method for polishing microcrystalline ceramic according to claim 5, wherein the polishing rotation speed is controlled to be 200rpm to 800 rpm;
and/or controlling the polishing pressure to be 0.1 MPa-0.8 MPa.
7. The method for polishing microcrystalline ceramic according to any one of claims 3 to 6, further comprising the following steps before polishing microcrystalline ceramic:
and performing fine polishing treatment on the microcrystalline ceramic to ensure that the surface roughness of the microcrystalline ceramic is 0.08-0.2 mu m.
8. The method for polishing microcrystalline ceramics according to claim 7, wherein the microcrystalline ceramics is finely polished by using a hard fine polishing medium and the polishing liquid according to any one of claims 1 to 2, the grain size of the abrasive in the polishing liquid is W1 to W5, and the roughness of the fine polished surface of the fine polishing medium is 0.1 μm to 1 μm.
9. The method for polishing microcrystalline ceramic according to claim 7, further comprising the following steps before the fine polishing treatment of microcrystalline ceramic:
and performing rough polishing treatment on the microcrystalline ceramic to ensure that the surface roughness of the microcrystalline ceramic is 0.4-0.8 mu m.
10. The method for polishing microcrystalline ceramics according to claim 9, wherein the microcrystalline ceramics is subjected to rough polishing treatment by using a hard rough polishing medium and the polishing solution according to any one of claims 1 to 2, wherein the grain size of the abrasive in the polishing solution is W10-W30, and the roughness of the rough polishing surface of the rough polishing medium is 1 μm-10 μm.
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| CN114309920A (en) * | 2021-12-23 | 2022-04-12 | 潮州三环（集团）股份有限公司 | Ceramic cleaver and preparation method thereof |
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