CN101273105A - Polishing slurries and methods for utilizing same - Google Patents
Polishing slurries and methods for utilizing same Download PDFInfo
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- CN101273105A CN101273105A CNA2006800356433A CN200680035643A CN101273105A CN 101273105 A CN101273105 A CN 101273105A CN A2006800356433 A CNA2006800356433 A CN A2006800356433A CN 200680035643 A CN200680035643 A CN 200680035643A CN 101273105 A CN101273105 A CN 101273105A
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Abstract
A polishing slurry includes liquid medium and particulate abrasive. The particulate abrasive includes soft abrasive particles, hard abrasive particles, and colloidal silica particles, wherein the soft abrasive particles have a Mohs hardness of not greater than 8 and the hard abrasive particles have a Mohs hardness of not less than 8, and wherein the soft abrasive particles and the hard abrasive particles are present at a weight ratio of not less than 2: 1.
Description
Technical field
The present invention relates generally to the method for a kind of polishing slurries and polishing workpiece or part, particularly sneaks into the polishing slurries and the using method thereof of liquid medium and particulate abrasive material.
Background technology
Polishing slurries is crossed over wide industrial scale, generally is applicable to machine workpiece or part, comprises metal or ceramic part, and composite part.Come the polishing semiconductor base material sophisticated comprising with a kind of method that is called chemically machinery polished (CMP) with the industrial circle of furtheing investigate, and wherein slurries can both be removed deposition material from semiconductor substrate with machinery or chemical process.The other technologies field only concentrates on by the machinery that uses ground slurry (also being commonly referred to as free abrasive material (free abrasive)) and removes, and this ground slurry contains grinding particulate material such as diamond, and ceramic oxidation and non-oxide material matrix (host).
Stand in the pottery and metal parts of aftershaping mechanical workout in many kinds, by hard stupalith for example the parts list that forms of silicon carbide revealed special challenge.Have been found that such part can be used for various industrial uses in a large number, comprise building, fireproof and semiconductor machining part.Owing to be subjected to the restriction of the treatment technology relevant with conventional pottery processing, comprise the nature mismachining tolerance, ceramic part for example silicon carbide components often needs postforming mechanical workout, and wherein part is in fine and close form, but needs surface finish.If the hardness of conventional ceramic part, realize that the mechanical workout of final step is normally required great effort, expensively with time-consuming, this mechanical workout often comprises polishing.
According to foregoing, many researchs are continuing to seek polishing slurries or free abrasive material and corresponding complete processing, described polishing slurries or free abrasive material and corresponding complete processing obtain the material clearance rate (MRR) of height simultaneously, and suitable finishing polish, for example low surface roughness and high degree of planarity and surperficial collimation.Such demand is special the urgent need to ceramic part, particularly including hard pottery above-mentioned.
Summary of the invention
According to an aspect, a kind of polishing slurries is provided, comprise liquid medium and abrasive material particles, this abrasive material particles comprises the combination of soft abrasive, hard abrasive and colloidal silica particles.Soft abrasive can have and is not more than 8 Mohs hardness, and hard abrasive can have and is not less than 8 Mohs hardness.The consumption of soft abrasive is usually greater than hard abrasive, and for example the weight ratio than hard abrasive is 2: 1.
According to another kind of embodiment, polishing slurries comprises a kind of liquid medium and abrasive material particles, and this abrasive material particles comprises ceria particle, diamond particles and colloidal silica particles.Ceria particulate amount accounts for the 50wt% of particulate abrasive material or higher.
According on the other hand, polishing slurries comprises liquid medium and abrasive material particles, and this abrasive material particles comprises soft abrasive, hard abrasive and colloidal silica particles.The particle consumption is respectively x wt%, ywt% and z wt%, wherein x+z 〉=2y.
According to another kind of embodiment, polishing slurries comprises liquid medium and abrasive material particles, and this abrasive material particles comprises soft abrasive, hard abrasive and colloidal silica particles.Hard abrasive has the Mohs hardness higher than soft abrasive, and soft abrasive and hard abrasive are at least a to have positive surface charge, thereby makes the colloidal silica particles flocculating.
According on the other hand, a kind of method of polishing ceramic part is provided, being included in provides a kind of aforesaid polishing slurries between ceramic part and the machine tool, and ceramic part and machine tool relatively move, thereby material is removed from surface of ceramic parts.
Description of drawings
Fig. 1-4 for example understands the polishing rate of different slurries on monocrystal SiC.
Embodiment
According to a kind of embodiment, a kind of polishing slurries is provided, comprise liquid medium, wherein have abrasive material particles.Abrasive material particles has composite structure usually, comprises several different types of abrasive particles.In one embodiment, abrasive material particles comprises soft abrasive, hard abrasive and colloidal silica particles.Usually, hard abrasive has the Mohs hardness that is higher than soft abrasive.For example, the Mohs hardness of hard abrasive can be not less than 8, for example is not less than 9, in fact can have 10 hardness.In contrast, soft abrasive can have and is not more than 8 hardness, for example is not more than 7, or not even greater than 6.One preferred embodiment in, soft abrasive is mainly formed by ceria, and hard abrasive is mainly formed by diamond.Other hard abrasive comprises norbide, silicon carbide and aluminum oxide.
Use ceria can consider to form the CMP slurry in this article, effect is all arranged on mechanical means and chemical process as the embodiment of soft abrasive material.In polishing operation, ceria herein can be used as oxygenant, helps the removal of material.
Usually abrasive material particles comprises content obviously greater than the soft abrasive of hard abrasive, and for example soft particle: the weight ratio of grit is not less than 2: 1, for example is not less than 5: 1,10: 1 or even 15: 1.In fact, some embodiment has very high soft abrasive loading capacity, for example is not less than about 20: 1 by weight.
Soft abrasive can account for 50 weight % or higher of abrasive material particles as main ingredient in abrasive material particles.In another embodiment, abrasive material particles contains x wt% soft abrasive, y wt% hard abrasive and z wt% colloidal silica particles, wherein x+z 〉=2y.For example, some embodiment even can have soft abrasive and the colloidal silica particles higher, relation table than hard abrasive concentration be shown x+z 〉=3y or even 5y, 8y, 10y, or even 12y.In fact, some embodiment even can have soft abrasive and the colloidal silica particles higher than hard abrasive loading capacity, for example relation table is shown x+z 〉=15y, or even 20y.
For the component parameter more specifically of the described various polishing slurries of this paper embodiment, described slurry can contain abrasive material particles, and it comprises the soft abrasive of 50～95wt%, the hard abrasive of 0.5～15wt% and the colloided silica of 4.5～35wt%.Another kind of embodiment comprises the soft abrasive of 70～95wt%, the hard abrasive of 0.5～15wt% and the colloided silica of 4.5～29.5wt%.Again in another embodiment, described abrasive material particles comprises the soft abrasive of 75～95wt%, the hard abrasive of 0.5～10wt% and the colloided silica of 4.5～24.5wt%.
More particularly, for the various particles of forming abrasive material particles, hard abrasive is thin relatively usually, has the mean particle size of about 0.02～50 μ m, 0.05～10 μ m for example, even 0.05～1.0 μ m than close limit in.Herein, various can on market, obtaining, the diamond of mean particle size in above-mentioned scope can use.For soft abrasive, particle can have very thin form, and particle size is in the scope of about 3～800nm, for example in the scope of about 10～300nm, or even 10～200nm.As mentioned above, the object lesson of a kind of soft abrasive of using in this article is CeO
2(ceria or cerium dioxide).
For colloided silica, term used herein " colloidal state " is meant and is dispersed in usually in the liquid medium, not with the interactional condition of other particle under by pedesis dispersed particles material.Promptly assemble slurry as independent component with other particle, colloided silica can not reunited basically usually, can be monodispersed basically.Yet, prepare to use hereinafter the dispersion state that can change colloided silica under the situation of slurry in greater detail.In one embodiment, colloided silica is the particulate material that a kind of solution forms, and is formed the particle of nano-scale by colloidal sol or sol-gel process.Usually colloided silica has very thin mean particle size, submicron particles normally, even more particularly in the scope of about 3-200nm, and for example in the scope of about 10-100nm, or even 10-75nm.
Especially, in polishing slurries the per-cent of solids loading or abrasive material particles in about 2-50 weight %, for example 2-35wt%, or 5-25wt%.Above-mentioned solids loading is represented to comprise the slurries gross weight of solid particulate composition and liquid component, total solids level in the slurries.In this respect, liquid medium can be water (water-based), organism or water and organic combination.The object lesson of liquid medium comprises deionized water, glycerine and/or TEA.
Embodiment
In one embodiment, form following paste compound.
Colloided silica: 0.0177 weight part
Glycerine: 0.2474 weight part
Water: 0.62277 weight part
The TEA:0.0032 weight part
Ceria: 0.1100 weight part
Diamond: 0.0045 weight part
The total solids loading capacity is about 0.1322 part or 13.22wt%, is made up of 3.4wt% diamond, 83wt% ceria and 13.4wt% colloided silica.The mean particle size of colloided silica is below 100nm, and silica particle is about 40nm and about 50nm.The mean particle size of ceria below 200nm, about 165nm.Diamond has the median size of about 0.10 μ m.
The method of a kind of mechanical workout (specifically comprising polishing) ceramic part is provided again according to a further aspect in the invention.According to a kind of method, a kind of polishing slurries is provided between ceramic part that will stand to polish and machine tool, ceramic part and machine tool move relative to each other, to remove material from surface of ceramic parts.In this article, machine tool can be with respect to fixed ceramic part motion, and ceramic part can be with respect to the motion of fixed machine tool, or ceramic part and machine tool can move or change (translate); However, in all cases, even a maintenance is motionless, two parts (ceramic part and machine tool) also move relative to each other.The polishing slurries that comprises liquid medium and abrasive material particles can be any one in the above-mentioned various slurry embodiment.For special structure is carried out polishing operation, can use a kind of in the various various polishing apparatus that can obtain in the prior art usually.For instance, machine tool can specifically be a polishing pad, a plurality of polishing pad or pulley belt.Usually, machine tool is biased on the ceramic part, has slurry between them.Machine tool even can specifically be a kind of fixed abrasive material, for example coated abrasive or bonding material, although machine tool itself is not an abrasive components usually,, above discussing in detail because slurry disclosed herein has specially designed composite particles abrasive construction.
The inventor finds according to different embodiments of the present invention, particularly including composite particles abrasive material as described herein, in the performance that expectation is provided aspect material removing rate and the surface finish.Different embodiments is verified, and material removing rate is not less than about 0.5 μ m/ hour, for example is not less than about 1.0 μ m/ hours, not even less than 1.25 μ m/ hours.In fact, especially the polishing running provides about 1.5 μ m/ hours material removing rate (MRR).In addition, according to the embodiment of the present invention, the surface finish of expectation proof list surface roughness root-mean-square value is not more than 100
, for example be not more than 50
, 20
Not even greater than 10
In fact, the polishing running according to this paper embodiment has shown about 4～5
The surfaceness of root-mean-square value.
By contrast, produce the comparative example that does not contain soft abrasive composition (as ceria), hard abrasive composition (as diamond) and these all three kinds of compositions of colloided silica.In any of these comparative examples, material removing rate is quite low.For example, a kind of slurry and a kind of slurry that contains ceria and colloided silica that contains diamond and colloided silica, have been found that under identical processing conditions, their material removing rate than the embodiment of this paper low a whole grade, about 0.2 μ m/ hour usually.
Do not want to rely on any special theory, but believe that colloided silica used herein has negative charge on its surface and since with positively charged soft abrasive for example the ceria particulate interact, thereby cause slight throwing out.Throwing out has been considered to cause the formation of soft aggregate, and soft aggregate comprises the hard abrasive (as diamond) of distribution (with less amount).It is believed that diamond particles is exposed to the outside surface of aggregate mostly, aggregate combines the characteristic of big soft particle (minimizing scratch) and grit (obtaining high MRR).
As what use in this article, the explanation of the throwing out that forms aggregate significantly is different from hard grind material aggregate, as a class aggregate be disclosed in US6, in 081,483.In this article, term " aggregate " is meant weak adherent particulate mass, opposite with the adherent aggregate, wherein every kind of composition of particulate classification still can be recognized separately in aggregate, can not hold tightly together, aggregate is by the covalently bound granulometric composition that typically forms by thermal treatment, and one in wherein a plurality of kinds may no longer be particle form (forming non-particulate bonding coat as colloided silica).According to the embodiment of this paper, colloided silica keeps particulate form usually, although colloided silica can with the abrasive particle mutual coagulation mutually of other classification in the slurries.And embodiment does not contain the aggregate of hard kind (as diamond), soft kind (as ceria) and colloided silica substantially usually.
Additional embodiments
By Fig. 1-4, on the monocrystalline silicon carbide workpiece that is installed on the Strasbaugh 6CA polishing tool, under identical processing condition, produce and estimate various slurries 11-42.The explanation of slurries is provided in the following form.
Table
| Machine: Strasbaugh 6CA | |||
| Slurry | pH | Explanation | Remove weight |
| 11 | 12 | Containing ceria | 0.00020 |
| 12 | 12 | Only contain silicon-dioxide | 0.00033 |
| 13 | 12 | Ceria/silicon-dioxide | 0.00070 |
| 14 | 12 | CER/D/CS1 | 0.00617 |
| 15 | 12 | D/CS1/50ct/L | 0.00220 |
| 16 | 12 | CER/D/CS1 | 0.00730 |
| 17 | 12 | CER/CS1 | 0.00010 |
| 18 | 12 | Al2O3/D/CS2 | 0.00123 |
| 41 | 9 | pH9CER-D CS1 | 0.00220 |
| 42 | 12 | pH12CER-D CS1 | 0.00637 |
| 31 | 12 | CER/D/CS1/std | 0.00730 |
| 32 | 12 | CER/D/CS1/50ct/L | 0.00840 |
| 33 | 12 | CER/D/CS1/25ct/L | 0.00643 |
| 34 | 12 | CER/D/CS1/100ct/L | 0.00325 |
| 35 | 12 | CER/D/CS1/100ct/L | 0.00627 |
| 21 | 12 | CER/D/CS1/std | 0.00730 |
| 22 | 12 | CER/D/ does not contain silicon-dioxide Silica/25ct | 0.00287 |
| 23 | 12 | CER/D/ does not contain GLYC/25ct | 0.00833 |
| 24 | 12 | CER/D/ does not contain TEA/25ct | 0.00830 |
| 25 | 12 | CER/D/CS2/25ct | 0.00513 |
| 26 | 12 | 9240/D/CS2 | 0.00123 |
The CER of Shi Yonging represents ceria in the above, and D represents diamond, and CS1 is based on the additive (form with suspension exists) of first colloided silica, and CS2 is based on the additive (also the form with suspension exists) of second colloided silica.
Fig. 1 represents that the combination by colloided silica, hard grind material (diamond in this case) and positively charged buffing material (ceria in this case) obtains the remarkable improvement of polishing rate.Polishing rate that it should be noted that three component prescriptions is considerably beyond only having one or the polishing rate of the slurries of two kind of component, the electronegative material of slurries 18 expressions for example aluminum oxide with use positively charged material such as ceria to compare not have special effect.
Fig. 2 is illustrated in the activeconstituents that contains among silica suspension CS1 and the CS2 and is actually silicon-dioxide.Referring to slurries 22, contain the suspension that has or not silicon-dioxide especially.
Fig. 3 is illustrated in the slurry that adamantine concentration uprises can restriction validity.
Fig. 4 represents that pH uprises and improves polishing rate, and is better significantly than pH9 when pH12.
The present invention is special to exemplify and has illustrated the working of an invention mode, but the present invention is not to be to be defined in the detailed content of being showed, because can carry out various improvement and alternative by any way in the case without departing from the scope of the present invention.For example, can provide extra or equivalent surrogate, and adopt extra or equivalent production stage.Similarly, of the present invention further improvement and equivalence that this paper relates to only just can expect with routine experiment that for those skilled in the art all these improve and equivalence can be thought in the scope of the present invention of claim qualification below.
Claims (70)
1, a kind of polishing slurries comprises:
Liquid medium; With
Abrasive material particles, described abrasive material particles comprises soft abrasive, hard abrasive and colloidal silica particles, wherein soft abrasive has and is not more than 8 Mohs hardness, and hard abrasive has and is not less than 8 Mohs hardness, and the weight ratio of soft abrasive wherein and hard abrasive is not less than 2: 1.
2, according to the polishing slurries of claim 1, wherein soft abrasive has and is not more than 7 Mohs hardness.
3, according to the polishing slurries of claim 2, wherein soft abrasive has and is not more than 6 Mohs hardness.
4, according to the polishing slurries of claim 3, wherein soft abrasive comprises ceria.
5, according to the polishing slurries of claim 1, wherein hard abrasive has and is not less than 9 Mohs hardness.
6, according to the polishing slurries of claim 5, wherein the Mohs hardness that has of hard abrasive is 10.
7, according to the polishing slurries of claim 6, wherein hard abrasive comprises diamond.
8, according to the polishing slurries of claim 1, wherein the weight ratio of soft abrasive and hard abrasive is not less than 5: 1.
9, polishing slurries according to Claim 8, wherein the weight ratio of soft abrasive and hard abrasive is not less than 10: 1.
10, according to the polishing slurries of claim 9, wherein the weight ratio of soft abrasive and hard abrasive is not less than 15: 1.
11, according to the polishing slurries of claim 10, wherein the weight ratio of soft abrasive and hard abrasive is not less than 20: 1.
12, according to the polishing slurries of claim 1, wherein abrasive material particles comprises the soft abrasive of 50～95wt%, the hard abrasive of 0.5～15wt% and the colloided silica of 4.5～35wt%.
13, according to the polishing slurries of claim 12, wherein abrasive material particles comprises the soft abrasive of 70～95wt%, the hard abrasive of 0.5～15wt% and the colloided silica of 4.5～29.5wt%.
14, according to the polishing slurries of claim 13, wherein abrasive material particles comprises the soft abrasive of 75～95wt%, the hard abrasive of 0.5～10wt% and the colloided silica of 4.5～24.5wt%.
15, according to the polishing slurries of claim 1, wherein colloidal silica particles has the submicron mean particle size.
16, according to the polishing slurries of claim 15, wherein the mean particle size of colloidal silica particles is in the scope of about 3～200nm.
17, according to the polishing slurries of claim 16, wherein the mean particle size of colloidal silica particles is in the scope of about 10～100nm.
18, according to the polishing slurries of claim 17, wherein the mean particle size of colloidal silica particles is in the scope of about 10～75nm.
19, according to the polishing slurries of claim 1, wherein slurry partly flocculates,, have aggregate, described aggregate contains buffing material, hard grind material and colloidal silica particles.
20, according to the polishing slurries of claim 1, wherein slurry comprises the abrasive material particles of loading capacity between about 2～35wt%.
21, according to the polishing slurries of claim 20, wherein slurry comprises the abrasive material particles of loading capacity between about 5～25wt%.
22, according to the polishing slurries of claim 1, wherein the mean particle size of hard abrasive is in the scope of about 0.02～50 μ m.
23, according to the polishing slurries of claim 22, wherein the mean particle size of hard abrasive is in the scope of about 0.05～10 μ m.
24, according to the polishing slurries of claim 23, wherein the mean particle size of hard abrasive is in the scope of about 0.05～1 μ m.
25, according to the polishing slurries of claim 1, wherein slurry is a water-based, and liquid medium comprises water.
26, according to the polishing slurries of claim 1, wherein liquid medium comprises a kind of organic liquid.
27, according to the polishing slurries of claim 1, wherein slurry is substantially free of aggregate, and described aggregate contains soft abrasive, hard abrasive and colloidal silica particles.
28, a kind of polishing slurries comprises:
Liquid medium; With
Abrasive material particles, described abrasive material particles comprises ceria particle, diamond particles and colloidal silica particles, wherein the ceria particle accounts for the 50wt% of abrasive material particles or higher.
29, according to the polishing slurries of claim 28, wherein the weight ratio of ceria particle and diamond particles is not less than 2: 1.
30, according to the polishing slurries of claim 29, wherein the weight ratio of ceria particle and diamond particles is not less than 5: 1.
31, according to the polishing slurries of claim 30, wherein the weight ratio of ceria particle and diamond particles is not less than 10: 1.
32, according to the polishing slurries of claim 31, wherein the weight ratio of ceria particle and diamond particles is not less than 15: 1.
33, according to the polishing slurries of claim 32, wherein the weight ratio of ceria particle and diamond particles is not less than 20: 1.
34, according to the polishing slurries of claim 28, wherein the amount of colloided silica can make slurry that the part flocculation takes place at least.
35, according to the polishing slurries of claim 28, wherein abrasive material particles comprises the ceria particle of 50～95wt%, the diamond particles of 0.5～15wt% and the colloided silica of 4.5～35wt%.
36, according to the polishing slurries of claim 35, wherein abrasive material particles comprises the ceria particle of 70～95wt%, the diamond particles of 0.5～15wt% and the colloided silica of 4.5～29.5wt%.
37, according to the polishing slurries of claim 36, wherein abrasive material particles comprises the ceria particle of 75～95wt%, the diamond particles of 0.5～10wt% and the colloided silica of 4.5～24.5wt%.
38, according to the polishing slurries of claim 28, wherein colloidal silica particles has the submicron mean particle size.
39, according to the polishing slurries of claim 38, wherein the mean particle size of colloidal silica particles is in the scope of about 3～200nm.
40, according to the polishing slurries of claim 39, wherein the mean particle size of colloidal silica particles is in the scope of about 10～100nm.
41, according to the polishing slurries of claim 40, wherein the mean particle size of colloidal silica particles is in the scope of about 10～75nm.
42, according to the polishing slurries of claim 28, wherein slurry partly flocculates, and has aggregate, and described aggregate contains ceria, diamond and colloidal silica particles.
43, according to the polishing slurries of claim 28, wherein slurry comprises that loading capacity is the abrasive material particles of about 2～35wt%.
44, according to the polishing slurries of claim 43, wherein slurry comprises that loading capacity is the abrasive material particles of about 5～25wt%.
45, according to the polishing slurries of claim 28, wherein the mean particle size of diamond particles is in the scope of about 0.02～50 μ m.
46, according to the polishing slurries of claim 45, wherein the mean particle size of diamond particles is in the scope of about 0.05～10 μ m.
47, according to the polishing slurries of claim 46, wherein the mean particle size of diamond particles is in the scope of about 0.05～1 μ m.
48, according to the polishing slurries of claim 28, wherein slurry is a water-based, and liquid medium comprises water.
49, according to the polishing slurries of claim 28, wherein liquid medium comprises organic liquid.
50, according to the polishing slurries of claim 28, wherein polishing slurries does not contain the aggregate of diamond particle, ceria particulate and colloided silica particulate.
51, a kind of polishing slurries comprises:
Liquid medium; With
Abrasive material particles, described abrasive material particles comprises that the amount with x wt% is present in the soft abrasive in the abrasive material particles, be present in hard abrasive in the abrasive material particles with the amount of y wt%, be present in colloidal silica particles in the abrasive material particles with amount with z wt%, the Mohs hardness of wherein said hard abrasive is greater than the Mohs hardness of described soft abrasive, and x+z 〉=2y.
52, according to the polishing slurries of claim 51, x+z 〉=3y wherein.
53, according to the polishing slurries of claim 52, x+z 〉=5y wherein.
54, according to the polishing slurries of claim 53, x+z 〉=8y wherein.
55, according to the polishing slurries of claim 54, x+z 〉=10y wherein.
56, according to the polishing slurries of claim 55, x+z 〉=12y wherein.
57, according to the polishing slurries of claim 56, x+z 〉=15y wherein.
58, according to the polishing slurries of claim 57, x+z 〉=20y wherein.
59, a kind of polishing slurries comprises:
Liquid medium; With
Abrasive material particles, described abrasive material particles comprises soft abrasive, hard abrasive and colloidal silica particles, wherein hard abrasive has the Mohs hardness that is higher than soft abrasive, and at least a in soft abrasive and the hard abrasive have positive surface charge, thereby flocculates with colloidal silica particles.
60, a kind of method of polishing ceramic part comprises:
Between ceramic part and machine tool, provide according to polishing slurries any in the claim 1～59;
Make relative movement between ceramic part and the machine tool, to remove material from surface of ceramic parts.
61, according to the method for claim 60, wherein ceramic part comprises that Mohs hardness is not less than 6 hard stupalith, and hard stupalith forms the described polished surface that carries out at least.
62, according to the method for claim 61, wherein hard stupalith comprises SiC.
63, according to the method for claim 60, wherein said surface has after finishing polishing and is not more than 100
The surfaceness of root-mean-square value.
64, according to the method for claim 63, wherein said surface has after finishing polishing and is not more than 50
The surfaceness of root-mean-square value.
65, according to the method for claim 64, wherein said surface has after finishing polishing and is not more than 20
The surfaceness of root-mean-square value.
66, according to the method for claim 65, wherein said surface has after finishing polishing and is not more than 10
The surfaceness of root-mean-square value.
67, according to the method for claim 66, wherein said surface has after finishing polishing and is not more than 5
The surfaceness of root-mean-square value.
68, according to the method for claim 60, the speed of wherein removing material from the surface is not less than 0.5 μ m/ hour.
69, according to the method for claim 68, the speed of wherein removing material from the surface is not less than 1.0 μ m/ hours.
70, according to the method for claim 69, the speed of wherein removing material from the surface is not less than 1.25 μ m/ hours.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US72227005P | 2005-09-30 | 2005-09-30 | |
| US60/722,270 | 2005-09-30 | ||
| US60/755,554 | 2005-12-30 |
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| Publication Number | Publication Date |
|---|---|
| CN101273105A true CN101273105A (en) | 2008-09-24 |
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|---|---|---|---|
| CNA2006800356433A Pending CN101273105A (en) | 2005-09-30 | 2006-09-29 | Polishing slurries and methods for utilizing same |
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| ZA (1) | ZA200802782B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103484026A (en) * | 2013-09-30 | 2014-01-01 | 江苏中晶科技有限公司 | High-efficiency ceramic polishing solution and preparation method thereof |
| CN107109196A (en) * | 2014-12-26 | 2017-08-29 | 福吉米株式会社 | The manufacture method of composition for polishing, Ginding process and ceramics part processed |
-
2006
- 2006-09-29 CN CNA2006800356433A patent/CN101273105A/en active Pending
-
2008
- 2008-03-28 ZA ZA200802782A patent/ZA200802782B/en unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103484026A (en) * | 2013-09-30 | 2014-01-01 | 江苏中晶科技有限公司 | High-efficiency ceramic polishing solution and preparation method thereof |
| CN107109196A (en) * | 2014-12-26 | 2017-08-29 | 福吉米株式会社 | The manufacture method of composition for polishing, Ginding process and ceramics part processed |
| CN107109196B (en) * | 2014-12-26 | 2019-01-04 | 福吉米株式会社 | The manufacturing method of composition for polishing, grinding method and ceramic system component |
| US10626297B2 (en) | 2014-12-26 | 2020-04-21 | Fujimi Incorporated | Polishing composition, polishing method, and method for manufacturing ceramic component |
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| Publication number | Publication date |
|---|---|
| ZA200802782B (en) | 2009-03-25 |
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Application publication date: 20080924 |