CN113381289B - Optical feedback structure and packaging method thereof - Google Patents
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- CN113381289B CN113381289B CN202110650811.6A CN202110650811A CN113381289B CN 113381289 B CN113381289 B CN 113381289B CN 202110650811 A CN202110650811 A CN 202110650811A CN 113381289 B CN113381289 B CN 113381289B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/008—Surface plasmon devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02315—Support members, e.g. bases or carriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
- H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
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Abstract
The center of an incident plane of the high-resistance silicon super-sphere lens is positioned in the front end face of the terahertz quantum cascade laser, the incident plane of the high-resistance silicon super-sphere lens is used for collecting laser emitted by the terahertz quantum cascade laser, an emergent spherical surface of the high-resistance silicon super-sphere lens is used for feeding back and gathering the laser emitted by the terahertz quantum cascade laser, the lasing intensity of a second laser mode of the terahertz quantum cascade laser is increased, and the intensity ratio of a first laser mode and a second laser mode of the terahertz quantum cascade laser is regulated and controlled. The disclosure also provides a packaging method, which can realize the high-efficiency output of the terahertz small-size flat-top Gaussian beam.
Description
Technical Field
The present disclosure relates to the field of semiconductor technologies, and in particular, to an optical feedback structure and a packaging method thereof.
Background
The flat-top Gaussian beam is a laser beam with almost consistent flux (energy density) in a circular region, and the high-power small-size terahertz flat-top Gaussian beam has strong application requirements in the fields of short-distance biological cell detection, imaging and the like.
However, in the prior art, the far field is regulated and controlled by regulating and controlling the ridge width dimension of the strip laser, so that the uncertainty is large, the divergence angle of the far field is large, and the output light spot cannot be directly used.
Disclosure of Invention
The invention provides an optical feedback structure and a packaging method thereof, which can realize the high-efficiency output of a small-size flat-top Gaussian beam of a terahertz quantum cascade laser.
To achieve the above object, a first aspect of embodiments of the present application provides an optical feedback structure, including:
the terahertz quantum cascade laser and the high-resistance silicon super-sphere lens are arranged in the terahertz quantum cascade laser;
the center of an incident plane of the high-resistance silicon aspheric lens is positioned in the front end surface of the terahertz quantum cascade laser, and the incident plane of the high-resistance silicon aspheric lens is used for collecting laser emitted by the terahertz quantum cascade laser;
the emergent spherical surface of the high-resistance silicon super-sphere lens is used for feeding back and converging laser emitted by the terahertz quantum cascade laser, the lasing intensity of a second laser mode of the terahertz quantum cascade laser is increased, and the intensity ratio of a first laser mode and the second laser mode of the terahertz quantum cascade laser is regulated and controlled, so that the laser output by the first laser mode and the second laser mode is superposed to form a flat-topped Gaussian beam.
Optionally, the terahertz quantum cascade laser includes:
a semi-insulating substrate;
a first contact layer disposed on the semi-insulating substrate;
an active region disposed on the first contact layer;
a second contact layer disposed on the active region;
a first electrode layer disposed on the second contact layer;
a second electrode layer disposed on the first contact layer.
Optionally, the thickness of the semi-insulating substrate of the terahertz quantum cascade laser is greater than 150 micrometers, and the working frequency range covers 60-100 micrometers.
Optionally, a focus of the high-resistance silicon aspheric lens is located at the center of an incident plane of the high-resistance silicon aspheric lens, and the center coincides with the center of the front end face of the terahertz quantum cascade laser.
Optionally, a relationship between the total thickness T and the radius R of the high-resistance silicon aspheric lens satisfies T ═ R × 3.4/(3.4-1), where 3.4 is a refractive index of a silicon material system in the terahertz waveband.
Optionally, the incident plane and the emergent spherical surface of the high-resistance silicon super-sphere lens cannot be coated with antireflection films by evaporation.
Optionally, the reflectivity of the exit spherical surface of the high-resistance silicon aspheric lens to the second laser mode is higher than the reflectivity to the first laser mode.
Optionally, the lasing intensity ratio of the first laser mode and the second laser mode is 1: 0.4.
Optionally, the terahertz quantum cascade laser is a terahertz quantum cascade laser with a semi-insulating surface plasma structure.
In order to achieve the above object, a second aspect of embodiments of the present application provides a packaging method, including:
sintering the terahertz quantum cascade laser at the center of a heat sink with a positioning line;
clamping a high-resistance silicon hypersphere lens in an opening of a lens positioning sample holder, wherein the diameter of the opening is the same as that of the high-resistance silicon hypersphere lens, and the thickness of the opening is the same as that of a hypersphere body of the high-resistance silicon hypersphere lens;
clamping the lens positioning sample frame into grooves on two sides of a heat sink, and enabling a protruding part at the top end of the lens positioning sample frame to be matched with the top end of the heat sink, so that the center of the front end face of the terahertz quantum cascade laser is superposed with the center of the incident plane of the high-resistance silicon hypersphere lens in a high-precision manner;
and the pressure of a screw is utilized to ensure that the incident plane of the high-resistance silicon super-sphere lens is in close contact with the front end face of the terahertz quantum cascade laser.
According to the technical scheme, the optical feedback structure and the packaging method thereof are provided. Has the following beneficial effects:
(1) the waveguide structure of the terahertz quantum cascade laser adopts a semi-insulating surface plasma structure, has high output power, and can ensure that far-field patterns have good symmetry in the horizontal and vertical directions by regulating and controlling ridge width and substrate thickness;
(2) the coupling lens of the terahertz quantum cascade laser adopts the high-resistance silicon super-sphere lens, the refractive index of the lens of a silicon material system in a terahertz wave band is 3.4, which is similar to the effective refractive index of the terahertz quantum cascade laser by 3.6, and the terahertz quantum cascade laser has good material adaptation degree and low cost;
(3) the focus of the high-resistance silicon super-sphere lens is positioned in the center of the sphere lens incidence plane and is superposed with the center of the front end face of the terahertz quantum cascade laser, the compact structure reduces the transmission loss of the terahertz laser, and the terahertz quantum cascade laser has the advantages of high collection efficiency and high coupling efficiency;
(4) the high-resistance silicon hypersphere adopted does not need a complex coating process, utilizes the different reflectivity of the output spherical surface of the spherical mirror to the first laser mode and the second laser mode, accurately and effectively regulates and controls the intensity ratio of the two laser modes, and realizes the control of far-field output light spot patterns; meanwhile, the property of a lens of a silicon sphere lens is utilized to generate a convergence effect on the flat-topped Gaussian beam formed by superposition, and finally the output of the small-size flat-topped Gaussian beam is realized;
(5) the high-precision alignment of the terahertz quantum cascade laser and the high-resistance silicon super-sphere lens is realized through mechanical positioning, the structure is compact, the stability is high, the success rate is high, and the problem that the adjustment and calibration difficulty is high under a vacuum condition is solved.
Drawings
To further illustrate the features and effects of the present disclosure, the present disclosure is further described below with reference to the accompanying drawings and specific embodiments, in which:
fig. 1 is a schematic structural diagram of a terahertz quantum cascade laser with a semi-insulating surface plasma structure according to an embodiment of the present disclosure;
fig. 2A is an exploded view of an implementation apparatus of an optical feedback structure according to an embodiment of the present disclosure;
FIG. 2B is a cross-sectional view of an implementation of an optical feedback structure of an embodiment of the present disclosure;
FIG. 3 is a normalized far field distribution graph of different laser modes of the terahertz quantum cascade laser after convergence by the high-resistance silicon hypersphere in the embodiment of the disclosure;
FIG. 4 is a graph of normalized reflectivity of an exit sphere of a high resistance silicon hypersphere for different laser modes in accordance with an embodiment of the present disclosure;
fig. 5 is a far field distribution graph of laser light in a superposition mode of a terahertz quantum cascade laser after passing through a high-resistance silicon hypersphere in the embodiment of the disclosure, where a solid line is a simulation result and a dotted line is a test result;
fig. 6 is a schematic flow chart of a packaging method according to an embodiment of the disclosure.
The reference numbers illustrate:
1-semi-insulating substrate 2-first contact layer 3-active region
4-second contact layer 5-first electrode layer 6-second electrode layer
7-terahertz quantum cascade laser
8-heat sink 9-positioning line on heat sink
10-lens positioning sample holder 11-high-resistance silicon hypersphere mirror
12-opening polytetrafluoroethylene tablet 13-opening oxygen-free copper tablet
14-incident plane of high-resistance silicon super-sphere lens 15-emergent sphere of high-resistance silicon super-sphere lens
16-focus of high-resistance silicon super-sphere lens
Front end face center of 17-terahertz quantum cascade laser
Detailed Description
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
The far field pattern of the semi-insulating surface plasma terahertz quantum cascade laser is related to the width of a light emitting ridge of the strip laser: when the ridge width is narrow, the laser mode is a first laser mode, the far field distribution of a single-lobe Gaussian beam is presented, and the far field divergence angle is multiplied by 40 degrees at-30 degrees; when the ridge width gradually increases, the second laser mode starts to be excited, and the far field pattern of the laser is determined by the superposition of the first laser mode and the second laser mode; the ridge width is continuously increased, only the second laser mode is emitted, the first laser mode is annihilated, and the output far field presents double-lobe distribution.
The present disclosure provides an optical feedback structure, comprising: the center of an incident plane of the high-resistance silicon super-sphere lens is positioned in the front end surface of the terahertz quantum cascade laser, the incident plane of the high-resistance silicon super-sphere lens is used for collecting laser emitted by the terahertz quantum cascade laser, the emergent spherical surface of the high-resistance silicon super-sphere lens is used for feeding back and converging laser emitted by the terahertz quantum cascade laser so as to increase the lasing intensity of a second laser mode of the terahertz quantum cascade laser, by regulating and controlling the intensity ratio of a first laser mode and a second laser mode of the terahertz quantum cascade laser, lasers output by the first laser mode and the second laser mode are superposed to form a flat-topped Gaussian beam, the flat-topped Gaussian beam is a small-size flat-topped Gaussian beam, and the small size means that the size is that the diameter of a light spot is 10 mm.
In an embodiment of the disclosure, the thickness of a semi-insulating substrate of the terahertz quantum cascade laser is greater than 150 micrometers, and the working frequency range covers 60-100 micrometers.
In an embodiment of the present disclosure, the incident plane and the emergent spherical surface of the high-resistance silicon aspheric lens cannot be coated with antireflection films by evaporation. And the reflectivity of the emergent spherical surface of the high-resistance silicon super-sphere lens to the second laser mode is higher than that to the first laser mode.
Fig. 1 shows a schematic diagram of a terahertz quantum cascade laser 7 according to an embodiment of the present disclosure, where the terahertz quantum cascade laser 7 may be a terahertz quantum cascade laser of a semi-insulating surface plasma structure, and includes a semi-insulating substrate 1, a first contact layer 2, an active region 3, a second contact layer 4, a first electrode layer 5, and a second electrode layer 6.
In the present embodiment, the terahertz quantum cascade laser 7 adopts a strip-shaped light-emitting ridge structure.
Further, the ridge width of the terahertz quantum cascade laser 7 is 170 micrometers.
Further, in order to ensure that the far-field spot pattern of the terahertz quantum cascade laser has symmetry in the horizontal and vertical directions, the thickness of the semi-insulating substrate 1 is 170 micrometers.
Further, the lasing wavelength of the terahertz quantum cascade laser 7 is 80 microns.
Fig. 2A shows an implementation apparatus of an optical feedback structure according to an embodiment of the present disclosure, including: the terahertz quantum cascade laser comprises a semi-insulating surface plasma structure terahertz quantum cascade laser 7, a high-resistance silicon super-sphere lens 11, a heat sink 8, a lens positioning sample holder 10, an open-pore polytetrafluoroethylene pressing sheet 12 and an open-pore oxygen-free copper pressing sheet 13.
As shown in fig. 2B, a focal point 16 of the high-resistance silicon hypersphere is located at the center of an incident plane 14 of the high-resistance silicon hypersphere 11, and the center coincides with a center 17 of a front end surface of the terahertz quantum cascade laser 7, and is used for collecting laser light emitted by the terahertz quantum cascade laser 7.
As shown in fig. 2B, the exit sphere 15 of the high-resistance silicon aspheric lens is used for feeding back and converging the laser emitted by the terahertz quantum cascade laser 7, so as to increase the lasing intensity of the second laser mode.
In this embodiment, the high-resistance silicon aspherical mirror has a radius of 1.5mm, a refractive index of 3.4, and a thickness satisfying the formula T ═ R × 3.4/(3.4-1), and preferably, the thickness is set to 2 mm.
Further, the aperture radius of the lens positioning sample holder 10 is 1.5mm, and the aperture thickness is 0.5 mm.
Furthermore, the thickness of the perforated polytetrafluoroethylene tablet is 1mm, and the radius of the perforated polytetrafluoroethylene tablet is 1.4 mm.
Further, the opening radius of the opened oxygen-free copper pressing sheet is 1.75 mm.
In an embodiment, as shown in fig. 3, two different laser modes of the terahertz quantum cascade laser 7 correspond to different shapes of far-field light spots after being converged by the high-resistance silicon hypersphere mirror 11. The far-field light spots corresponding to the first laser mode are in single-lobe Gaussian distribution, and the far-field light spots corresponding to the second laser mode are in symmetrical double-lobe distribution.
In an embodiment, as shown in fig. 4, the exit sphere 15 of the high-resistance silicon aspheric mirror has different reflectivities for the first laser mode and the second laser mode.
Further, the radius of a near-field light spot of the terahertz quantum cascade laser 7 is 80 micrometers, the reflectivity ratio of the high-resistance silicon hypersphere mirror 11 to the corresponding first laser mode and second laser mode is controlled to be 1: 2, and the final output intensity ratio of the first laser mode and the second laser mode is controlled to be 1: 0.4.
In an embodiment, as shown in fig. 5, fitting the far-field pattern of the superimposed state of the first laser mode and the second laser mode realizes a small-size flat-top gaussian beam distribution, and meanwhile, the matching degree of the test result and the fitting result is high.
As shown in fig. 6, an embodiment of the present disclosure provides a packaging method of a feedback structure, which is used for manufacturing the optical feedback structure.
The method specifically comprises the following steps:
and S1, sintering the terahertz quantum cascade laser 7 at the center of the heat sink 8 with the positioning line.
The terahertz quantum cascade laser 7 is sintered at the right center of the heat sink 8 through a high-purity indium material by utilizing two positioning lines 9 on the heat sink 8, so that the front end face of the terahertz quantum cascade laser is aligned with the edge of the heat sink, and the process is finished under a microscope.
S2, clamping the high-resistance silicon hypersphere lens 11 in an opening of the lens positioning sample holder 10, wherein the diameter of the opening is the same as that of the high-resistance silicon hypersphere lens 11, and the thickness of the opening is the same as that of a hypersphere part of the high-resistance silicon hypersphere lens 11.
S3, the lens positioning sample holder 10 is clamped into grooves on two sides of a heat sink 8, and a protruding part at the top end of the lens positioning sample holder 10 is matched with the top end of the heat sink 8, so that the center of the front end face of the terahertz quantum cascade laser 7 is overlapped with the center of an incidence plane of the high-resistance silicon super-sphere lens 11 in a high-precision mode.
The high-resistance silicon aspherical mirror 11 is clamped in an opening of the lens positioning sample frame 10, two ends of the lens positioning sample frame 10 can be accurately clamped in grooves on two sides of the heat sink 8 to provide positioning in the horizontal direction, a protruding part at the top end of the lens positioning sample frame 10 is matched with the top end of the heat sink 8 to provide positioning in the vertical direction, and the focus 16 of the high-resistance silicon aspherical mirror is aligned with the center 17 of the front end face of the terahertz quantum cascade laser 7 in a high-precision mode.
And S4, closely contacting the incident plane of the high-resistance silicon super-sphere lens 10 with the front end face of the terahertz quantum cascade laser 7.
The opening aperture of the polytetrafluoroethylene pressing sheet 12 is slightly smaller than the diameter of the high-resistance silicon super-sphere lens, the opening aperture of the oxygen-free copper pressing sheet 13 is slightly larger than the diameter of the high-resistance silicon super-sphere lens, the opening polytetrafluoroethylene pressing sheet 12 and the oxygen-free copper pressing sheet 13 are sequentially pressed on the lens positioning sample frame 10, the pressure of a screw is utilized to ensure that the incident plane of the high-resistance silicon super-sphere lens 10 is in close contact with the front end face of the terahertz quantum cascade laser 7, and meanwhile, the plasticity of a polytetrafluoroethylene material is utilized to prevent scratching of the high-resistance silicon super-sphere lens 10.
Up to this point, the present embodiment has been described in detail with reference to the accompanying drawings. From the above description, those skilled in the art should clearly recognize that the present disclosure provides an optical feedback structure and a packaging method thereof. The method adopts a single spherical mirror coupling structure to realize the high-efficiency output of the small-size flat-top Gaussian beam. The structure adopts a lens of a silicon material system, the refractive index of the lens in a terahertz laser band is 3.4, the effective refractive index of the lens is similar to 3.6 of the effective refractive index of a terahertz quantum cascade laser, the material adaptation degree is high, and the cost is low; the high-resistance silicon hypersphere coupling structure is adopted, so that the focus of the lens is positioned in the center of an incident plane of the hypersphere and is superposed with the center of the front end face of the terahertz quantum cascade laser, the compact structure reduces the transmission loss of terahertz laser, and the terahertz quantum cascade laser has the advantages of high collection efficiency and high coupling efficiency; the structure utilizes the single lens to accurately regulate and control the reflectivity of the two laser modes, realizes the output of the first laser mode and the second laser mode with fixed intensity ratio, avoids the instability of the laser for regulating and controlling the output intensity ratio of the two laser modes by the ridge width, has the light spot convergence function, and realizes the output of the small-size flat-top Gaussian far-field pattern; compared with the existing structure for realizing flat-top Gaussian beam output by external coupling, the structure has few optical elements, does not depend on the external optical element of a refrigerator, and has the advantages of compact structure, high stability and convenient use; in the packaging process of the structure, high-precision machining is utilized to ensure high-precision alignment of the center of the front end face of the laser and the focus of the high-resistance silicon hypersphere, operability and yield are greatly improved, and a good technical means is provided for realizing output of the terahertz small-size flat-top Gaussian beam.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (10)
1. An optical feedback structure, comprising:
the terahertz quantum cascade laser and the high-resistance silicon super-sphere lens are arranged in the terahertz quantum cascade laser;
the center of an incident plane of the high-resistance silicon aspheric lens is positioned in the front end surface of the terahertz quantum cascade laser, and the incident plane of the high-resistance silicon aspheric lens is used for collecting laser emitted by the terahertz quantum cascade laser;
the emergent spherical surface of the high-resistance silicon super-sphere lens is used for feeding back and converging laser emitted by the terahertz quantum cascade laser, the lasing intensity of a second laser mode of the terahertz quantum cascade laser is increased, so that laser output by the first laser mode and the second laser mode is overlapped to form a flat-topped Gaussian beam by regulating and controlling the intensity ratio of the first laser mode and the second laser mode of the terahertz quantum cascade laser, a far-field light spot corresponding to the first laser mode presents single-lobe Gaussian distribution, and a far-field light spot corresponding to the second laser mode presents symmetrical double-lobe distribution.
2. The optical feedback structure of claim 1, wherein the terahertz quantum cascade laser comprises:
a semi-insulating substrate;
a first contact layer disposed on the semi-insulating substrate;
an active region disposed on the first contact layer;
a second contact layer disposed on the active region;
a first electrode layer disposed on the second contact layer;
a second electrode layer disposed on the first contact layer.
3. The optical feedback structure as claimed in claim 1, wherein the semi-insulating substrate of the terahertz quantum cascade laser has a thickness of more than 150 microns, and an operating frequency range of 60-100 microns.
4. The optical feedback structure according to claim 1, wherein the focal point of the high-resistance silicon aspheric lens is located at the center of the incident plane of the high-resistance silicon aspheric lens, and the center coincides with the center of the front end surface of the terahertz quantum cascade laser.
5. The optical feedback structure as claimed in claim 1, wherein the relationship between the total thickness T and the radius R of the high-resistance silicon aspheric lens satisfies T ═ rx3.4/(3.4-1), where 3.4 is the refractive index of the silicon material system in the terahertz band.
6. The optical feedback structure as claimed in claim 1, wherein the incident plane and the emergent spherical surface of the high-resistance silicon super-sphere lens are not coated with antireflection film.
7. The structure of claim 1, wherein the reflectivity of the exit sphere of the high-resistance silicon aspheric mirror to the second lasing mode is higher than the reflectivity to the first lasing mode.
8. The optical feedback structure of claim 1, wherein the lasing intensity ratio of the first lasing mode and the second lasing mode is 1: 0.4.
9. The optical feedback structure as claimed in any one of claims 1 to 8, wherein the terahertz quantum cascade laser is a semi-insulating surface plasmon structure terahertz quantum cascade laser.
10. A method of packaging an optical feedback structure as claimed in any one of claims 1 to 9, comprising:
sintering the terahertz quantum cascade laser at the center of a heat sink with a positioning line;
clamping a high-resistance silicon hypersphere lens in an opening of a lens positioning sample holder, wherein the diameter of the opening is the same as that of the high-resistance silicon hypersphere lens, and the thickness of the opening is the same as that of a hypersphere part of the high-resistance silicon hypersphere lens;
clamping the lens positioning sample frame into grooves on two sides of a heat sink, and enabling a protruding part at the top end of the lens positioning sample frame to be matched with the top end of the heat sink, so that the center of the front end face of the terahertz quantum cascade laser is superposed with the center of the incident plane of the high-resistance silicon hypersphere lens in a high-precision manner;
and the pressure of a screw is utilized to ensure that the incident plane of the high-resistance silicon super-sphere lens is in close contact with the front end face of the terahertz quantum cascade laser.
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