CN113285007A - LED packaging structure - Google Patents
LED packaging structure Download PDFInfo
- Publication number
- CN113285007A CN113285007A CN202110644483.9A CN202110644483A CN113285007A CN 113285007 A CN113285007 A CN 113285007A CN 202110644483 A CN202110644483 A CN 202110644483A CN 113285007 A CN113285007 A CN 113285007A
- Authority
- CN
- China
- Prior art keywords
- substrate
- electrode
- led chip
- electrically connected
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title description 20
- 239000000758 substrate Substances 0.000 claims abstract description 73
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052737 gold Inorganic materials 0.000 claims abstract description 11
- 239000010931 gold Substances 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 41
- 238000007747 plating Methods 0.000 claims description 19
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 7
- 239000003292 glue Substances 0.000 claims description 7
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000000741 silica gel Substances 0.000 description 9
- 229910002027 silica gel Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 241000218202 Coptis Species 0.000 description 7
- 235000002991 Coptis groenlandica Nutrition 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 7
- 230000005611 electricity Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000005496 eutectics Effects 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 239000000499 gel Substances 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009954 braiding Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
Landscapes
- Led Device Packages (AREA)
Abstract
本申请公开了一种LED封装结构，包括基板；位于基板上表面的LED芯片和导电块，LED芯片的下部电极与基板上表面的第一线路区电连接，导电块与基板上表面的第二线路区电连接；位于述LED芯片和导电块上方的透明片体，透明片体包括透明基体、位于透明基体下表面的透明导电层、位于透明导电层下表面的第一电极和第二电极，第一电极与LED芯片的上部电极电连接，第二电极与导电块电连接。LED芯片的上部电极与第一电极电连接，导电块与第二电极电连接，且导电块与基板电连接，所以上部电极与基板电连接，又由于下部电极与基板电连接，所以上部电极和下部电极均与基板电连接，无需使用金线，避免因金线断裂导致的死灯，提升器件的可靠性。
The present application discloses an LED package structure, comprising a substrate; an LED chip and a conductive block located on the upper surface of the substrate, the lower electrode of the LED chip is electrically connected to a first circuit area on the upper surface of the substrate, and the conductive block is connected to a second circuit area on the upper surface of the substrate. The circuit area is electrically connected; the transparent sheet body located above the LED chip and the conductive block, the transparent sheet body includes a transparent substrate, a transparent conductive layer located on the lower surface of the transparent substrate, a first electrode and a second electrode located on the lower surface of the transparent conductive layer, The first electrode is electrically connected to the upper electrode of the LED chip, and the second electrode is electrically connected to the conductive block. The upper electrode of the LED chip is electrically connected to the first electrode, the conductive block is electrically connected to the second electrode, and the conductive block is electrically connected to the substrate, so the upper electrode is electrically connected to the substrate, and since the lower electrode is electrically connected to the substrate, the upper electrode and the substrate are electrically connected. The lower electrodes are all electrically connected to the substrate, and no gold wires are required to avoid dead lights caused by breakage of the gold wires and improve the reliability of the device.
Description
Technical Field
The application relates to the technical field of LED packaging, in particular to an LED packaging structure.
Background
An LED (Light Emitting Diode) package structure is an electroluminescent device, and uses a solid semiconductor chip as a Light Emitting material, and photons are emitted by recombination of carriers to directly emit Light.
At present, the turn lights and the brake lights of the automobiles mainly adopt LED packaging structures as light sources, the turn lights adopt the packaging structures of yellow LED chips, and the brake lights adopt the packaging structures of red LED chips. The colored light chips in the LED packaging structure are vertical chips, positive and negative electrodes are respectively positioned on the upper surface and the lower surface of the LED chip, gold wires are required to be connected with an electric appliance, and once the gold wires are broken, a lamp can be turned off; some can cover silica gel on the LED chip and protect, but because silica gel is very soft, just lead to the chip to warp or impaired when external force probably extrudees the packaging structure top, the gold thread fracture leads to dead lamp.
Therefore, how to solve the above technical problems should be a great concern to those skilled in the art.
Disclosure of Invention
The utility model provides a LED packaging structure to solve because of the dead lamp problem that the gold thread fracture appears, promote the reliability of LED encapsulation device.
In order to solve the above technical problem, the present application provides an LED package structure, including:
a substrate;
the LED circuit board comprises an LED chip and a conductive block, wherein the LED chip is positioned on the upper surface of a substrate, the lower electrode of the LED chip is electrically connected with a first circuit area on the upper surface of the substrate, and the conductive block is electrically connected with a second circuit area on the upper surface of the substrate;
the transparent sheet body is positioned above the LED chip and the conductive block and comprises a transparent base body, a transparent conductive layer positioned on the lower surface of the transparent base body, a first electrode and a second electrode positioned on the lower surface of the transparent conductive layer, the first electrode is electrically connected with the upper electrode of the LED chip, and the second electrode is electrically connected with the conductive block.
Optionally, the method further includes:
and the white wall is positioned on the peripheral side surface of the LED chip.
Optionally, the height of the white wall is equal to the sum of the heights of the LED chip and the transparent sheet body.
Optionally, the method further includes:
and the transparent protective layer is positioned on the upper surface of the LED chip.
Optionally, the height of the conductive block is equal to the height of the LED chip.
Optionally, the plating layer of the substrate is a gold plating layer.
Optionally, when the plating layer of the substrate is a silver plating layer, the method further includes:
and the white glue layer is positioned on the surface of the silver plating layer.
Optionally, the conductive block is a copper pillar.
Optionally, the substrate is an aluminum nitride substrate.
Optionally, the upper electrode and the lower electrode are gold-tin alloy electrodes.
The application provides an LED packaging structure, which comprises a substrate; the LED circuit board comprises an LED chip and a conductive block, wherein the LED chip is positioned on the upper surface of a substrate, the lower electrode of the LED chip is electrically connected with a first circuit area on the upper surface of the substrate, and the conductive block is electrically connected with a second circuit area on the upper surface of the substrate; the transparent sheet body is positioned above the LED chip and the conductive block and comprises a transparent base body, a transparent conductive layer positioned on the lower surface of the transparent base body, a first electrode and a second electrode positioned on the lower surface of the transparent conductive layer, the first electrode is electrically connected with the upper electrode of the LED chip, and the second electrode is electrically connected with the conductive block.
It is thus clear that LED packaging structure in this application includes the base plate, the LED chip, conducting block and transparent lamellar body, transparent lamellar body includes transparent base member, transparent conducting layer, first electrode and second electrode, the upper portion electrode and the first electrode electricity of LED chip are connected, conducting block and second electrode electricity are connected, so, the conducting block realizes the electricity with the upper portion electrode of LED chip and is connected, because conducting block and the second circuit district electricity of base plate upper surface are connected, so the upper portion electrode and the base plate second circuit district electricity of LED chip are connected, because the lower part electrode of LED chip is connected with the first circuit district electricity of base plate upper surface, so, the upper portion electrode and the lower part electrode of LED chip all realize with the electricity of base plate being connected, need not to use the gold thread, avoid appearing the dead lamp phenomenon because of the gold thread fracture leads to, promote the reliability of LED packaging device.
Drawings
For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an LED package structure according to an embodiment of the present disclosure;
fig. 2 is a top view of a substrate provided with LED chips and conductive bumps according to an embodiment of the present disclosure;
FIG. 3 is a bottom view of a substrate provided in accordance with an embodiment of the present application;
FIG. 4 is a schematic structural view of a transparent sheet according to an embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of another LED package structure provided in the embodiment of the present application;
fig. 6 is a schematic structural diagram of another LED package structure according to an embodiment of the present disclosure.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As described in the background art, the color light chips in the LED package structure are vertical chips, the positive and negative electrodes are respectively located on the upper and lower surfaces of the LED chip, and gold wires are required to be connected to an electrical appliance, and once the gold wires are broken, the lamp will be turned off; some can cover silica gel on the LED chip and protect, but because silica gel is very soft, just lead to the chip to warp or impaired when external force probably extrudees the packaging structure top, the gold thread fracture leads to dead lamp.
In view of the above, the present application provides an LED package structure, please refer to fig. 1, where fig. 1 is a schematic structural diagram of an LED package structure according to an embodiment of the present application, including:
a substrate 1;
the LED circuit board comprises an LED chip 2 and a conductive block 3, wherein the LED chip 2 and the conductive block 3 are positioned on the upper surface of a substrate 1, the lower electrode of the LED chip 2 is electrically connected with a first circuit area on the upper surface of the substrate 1, and the conductive block 3 is electrically connected with a second circuit area on the upper surface of the substrate 1;
the transparent sheet body is positioned above the LED chip 2 and the conductive block 3 and comprises a transparent base body 4, a transparent conductive layer 5 positioned on the lower surface of the transparent base body 4, a first electrode 7 and a second electrode 6 positioned on the lower surface of the transparent conductive layer 5, wherein the first electrode 7 is electrically connected with the upper electrode of the LED chip 2, and the second electrode 6 is electrically connected with the conductive block 3.
The LED chip 2 is a vertical LED chip, and the light emitting type of the LED chip 2 is not specifically limited in this application, depending on the situation. For example, the LED chip 2 may be a yellow LED chip, or a red LED chip, or the like. Further, the size of the LED chip 2 is not specifically limited in this application, and can be set by itself. For example, the LED chip 2 may be 14mil, 25mil, 40mil, 43mil, 45mil, etc. in size.
The substrate 1 may be a ceramic substrate, for example, the substrate 1 is an aluminum nitride substrate, or the substrate 1 is an aluminum oxide substrate. A plating layer manufactured by using a DPC (direct plating copper) technique is distributed on the surface of the substrate 1. The first circuit area and the second circuit area are positioned on the surface of the coating. The flatness Ra of the substrate 1 is less than 0.3 μm.
The plating layer of the substrate 1 is not particularly limited in this application, and for example, the plating layer of the substrate 1 is a gold plating layer, or the plating layer is a silver plating layer. When the plating layer of the substrate 1 is a silver plating layer, in order to avoid the silver plating layer from being vulcanized in air, the LED package structure further includes: and the white glue layer is positioned on the surface of the silver plating layer.
A top view of the substrate 1 provided with the LED chip 2 and the conductive bumps 3 is shown in fig. 2, and a bottom view of the substrate 1 is shown in fig. 3. The first circuit area 11 and the second circuit area 12 are distributed on the upper surface of the substrate 1 and are mutually disconnected, and the via holes 13 are distributed in each circuit area, and the via holes 13 can lead the electric signals of the first circuit area 11 and the second circuit area 12 on the upper surface of the substrate 1 to the corresponding first bonding pads 15 and second bonding pads 14 on the lower surface of the substrate 1. The lower electrode of the LED chip 2 is electrically connected to the first wiring region 11, i.e., the lower electrode is LED to the lower surface of the substrate 1 by the first wiring region 11 and the via hole 13.
The schematic structural diagram of the transparent sheet is shown in fig. 4, the transparent conductive layer 5 is located on the lower surface of the transparent substrate 4, the first electrode 7 and the second electrode 6 are located on the lower surface of the transparent conductive layer 5, and both the first electrode 7 and the second electrode 6 are electrically connected with the transparent conductive layer 5. The upper electrode of the LED chip 2 is electrically connected to the first electrode 7, and the conductive block 3 is electrically connected to the second electrode 6, so that the upper electrode is LED to the lower surface of the substrate 1 through the transparent sheet, the conductive block 3, the second circuit region 12 and the via hole.
The transparent conductive layer 5 is not particularly limited in the present application, and may be transparent and conductive, and may be, for example, an ITO (indium tin oxide) conductive layer or the like. In order to reduce the manufacturing cost of the LED package structure, the transparent substrate 4 may be made of glass.
The shape of the conductive block 3 includes, but is not limited to, a cylinder, a rectangular parallelepiped, a truncated pyramid, and the like. In order to simplify the manufacturing process of the conductive block 3 and reduce the cost of the LED package structure, the conductive block 3 is a copper pillar. Of course, other conductive blocks may be used, such as gold columns, silver columns, etc., and the present application is not limited thereto.
In order to improve the stability of the electrical connection between the conductive block 3, the LED chip 2 and the transparent sheet, the height of the conductive block 3 is equal to the height of the LED chip 2, and the height of the LED chip 2 is generally about 150 μm.
The LED packaging structure in the application comprises a substrate 1, an LED chip 2, a conductive block 3 and a transparent sheet body, wherein the transparent sheet body comprises a transparent base 4, a transparent conductive layer 5, a first electrode 7 and a second electrode 6, the upper electrode of the LED chip 2 is electrically connected with the first electrode 7, the conductive block 3 is electrically connected with the second electrode 6, therefore, the conductive bumps 3 are electrically connected to the upper electrodes of the LED chips 2, and since the conductive bumps 3 are electrically connected to the second wiring regions on the upper surface of the substrate 1, so that the upper electrode of the LED chip 2 is electrically connected to the second wiring region of the substrate 1, and since the lower electrode of the LED chip 2 is electrically connected to the first wiring region of the upper surface of the substrate 1, therefore, the upper electrode and the lower electrode of the LED chip 2 are electrically connected with the substrate 1, a gold thread is not needed, the phenomenon of lamp death caused by gold thread fracture is avoided, and the reliability of an LED packaging device is improved.
In order to improve the light reflection rate of the LED package structure, in an embodiment of the present application, the LED package structure further includes:
and the white wall 8 is positioned on the peripheral side surface of the LED chip 2. The white wall 8 is formed by curing white glue.
As an example, referring to fig. 5, the height of the white wall 8 is equal to the sum of the heights of the LED chip 2 and the transparent sheet.
In order to promote the protection to LED chip 2, prolong the life of LED chip 2, still include:
and the transparent protective layer is positioned on the upper surface of the LED chip 2. The transparent protective layer has the characteristics of good light transmission and high temperature resistance, and can be a silica gel layer or a silica resin layer and the like.
As another possible embodiment, please refer to fig. 6, the LED package structure is provided with a white wall 8 and a transparent silicone gel 9, the transparent silicone gel 9 is further disposed between the white wall 8 and the substrate 1, and the sum of the heights of the transparent silicone gel and the white wall 8 is equal to the sum of the heights of the LED chip 2 and the transparent sheet.
On the basis of any of the above embodiments, in an embodiment of the present application, the upper electrode and the lower electrode of the LED chip 2 are gold-tin alloy electrodes. Correspondingly, the first electrode 7 is also a gold-tin alloy electrode.
When the gold-tin alloy electrode is adopted, the LED chip 2 is connected with the substrate 1 and the transparent sheet body in an eutectic welding mode in the manufacturing process of the LED packaging assembly, and the reliability of the eutectic welding is high, so that the reliability of the LED packaging chip is high.
It should be noted that, in other embodiments, the upper electrode and the lower electrode may also be gold electrodes, and a reflow soldering manner is adopted in this case; or adopting ultrasonic hot-pressing eutectic and other modes.
The following describes a method for fabricating an LED package structure in the present application.
step 5, welding the first electrode of the transparent sheet body with the upper electrode of the LED chip and the second electrode with the copper column to realize the electrical connection of the first electrode and the upper electrode of the LED chip and the electrical connection of the second electrode and the copper column;
step 6, gummosis: white glue flows on the upper surface of the 2016 ceramic substrate and around the LED chip and is cured to form a white wall, and the height of the white wall is equal to the sum of the heights of the LED chip and the transparent sheet body; or, firstly, flowing a layer of transparent silica gel on the upper surface of the 2016 ceramic substrate and around the LED chip, wherein the upper surface of the silica gel is flush with the upper surface of the transparent sheet body, cutting off a part of transparent silica gel around the LED chip by adopting a cutting process after baking and curing, then flowing a layer of white glue on the cut part of the silica gel, and the upper surface of the white glue after curing is flush with the upper surface of the transparent sheet body;
and 9, labeling and warehousing the LED packaging structures qualified in the test.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The LED package structure provided in the present application is described in detail above. The principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and the core idea of the present application. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110644483.9A CN113285007A (en) | 2021-06-09 | 2021-06-09 | LED packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110644483.9A CN113285007A (en) | 2021-06-09 | 2021-06-09 | LED packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113285007A true CN113285007A (en) | 2021-08-20 |
Family
ID=77284024
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110644483.9A Pending CN113285007A (en) | 2021-06-09 | 2021-06-09 | LED packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113285007A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010003978A (en) * | 2008-06-23 | 2010-01-07 | Panasonic Electric Works Co Ltd | Light emitting device |
| CN201910416U (en) * | 2011-01-09 | 2011-07-27 | 马春军 | Encapsulation structure for large-power chip and special chip thereof |
| CN202134574U (en) * | 2011-08-02 | 2012-02-01 | 吉爱华 | Led chip packaging structure |
| CN209298159U (en) * | 2018-12-25 | 2019-08-23 | 北京大学东莞光电研究院 | A kind of LED encapsulation structure of vertical structure |
| CN111864024A (en) * | 2020-07-24 | 2020-10-30 | 武汉大学 | A kind of selective epitaxial growth of Micro-LED chip and preparation method thereof |
| CN214542282U (en) * | 2021-06-09 | 2021-10-29 | 宁波升谱光电股份有限公司 | LED packaging structure |
-
2021
- 2021-06-09 CN CN202110644483.9A patent/CN113285007A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010003978A (en) * | 2008-06-23 | 2010-01-07 | Panasonic Electric Works Co Ltd | Light emitting device |
| CN201910416U (en) * | 2011-01-09 | 2011-07-27 | 马春军 | Encapsulation structure for large-power chip and special chip thereof |
| CN202134574U (en) * | 2011-08-02 | 2012-02-01 | 吉爱华 | Led chip packaging structure |
| CN209298159U (en) * | 2018-12-25 | 2019-08-23 | 北京大学东莞光电研究院 | A kind of LED encapsulation structure of vertical structure |
| CN111864024A (en) * | 2020-07-24 | 2020-10-30 | 武汉大学 | A kind of selective epitaxial growth of Micro-LED chip and preparation method thereof |
| CN214542282U (en) * | 2021-06-09 | 2021-10-29 | 宁波升谱光电股份有限公司 | LED packaging structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI528508B (en) | High-power light-emitting diode ceramic package manufacturing method | |
| JP5746076B2 (en) | Semiconductor light emitting device package submount and semiconductor light emitting device package including the submount | |
| KR20050092300A (en) | High power led package | |
| CN102610735B (en) | Light-emitting device with thermoelectric separated structure and manufacturing method of light-emitting device | |
| WO2013168802A1 (en) | Led module | |
| CN105023987A (en) | LED bearing base and manufacturing method thereof | |
| CN101728466A (en) | Ceramic packaging structure of high-power light-emitting diode and manufacturing method thereof | |
| CN105514249A (en) | LED package and carrier board | |
| KR20120094279A (en) | Light emitting device package and method of fabricating the same | |
| EP2876355B1 (en) | LED base module and LED lighting device | |
| CN1679179A (en) | A surface mounting type light emitting diode | |
| KR101253247B1 (en) | substrate for light emitting device | |
| CN214542282U (en) | LED packaging structure | |
| KR100613490B1 (en) | Light emitting device, package structure and manufacturing method | |
| CN107578711A (en) | L ED display assembly | |
| JP5833610B2 (en) | Light emitting diode package and manufacturing method thereof | |
| KR101363980B1 (en) | Optical module and manufacturing method thereof | |
| JP5721797B2 (en) | Light emitting diode package and manufacturing method thereof | |
| KR101192816B1 (en) | Led package and its manufacturing method | |
| KR20130077059A (en) | Led package and manufacturing method for the same | |
| CN113285007A (en) | LED packaging structure | |
| CN211062742U (en) | LED package structure | |
| KR101452857B1 (en) | Light emitting device package and method for manufacturing the same | |
| KR100878398B1 (en) | High output LED package and manufacturing method | |
| JP2016018990A (en) | Package structure and method of manufacturing the same and mounting member |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |