CN113106362B - Manufacturing method of target material back plate with concave surface - Google Patents
Manufacturing method of target material back plate with concave surface Download PDFInfo
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- 239000013077 target material Substances 0.000 title description 9
- 238000000137 annealing Methods 0.000 claims abstract description 138
- 238000005242 forging Methods 0.000 claims abstract description 101
- 238000000034 method Methods 0.000 claims abstract description 29
- 239000011261 inert gas Substances 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
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- 238000000465 moulding Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 9
- 239000000463 material Substances 0.000 description 23
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- 229910052751 metal Inorganic materials 0.000 description 7
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
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- LKTZODAHLMBGLG-UHFFFAOYSA-N alumanylidynesilicon;$l^{2}-alumanylidenesilylidenealuminum Chemical compound [Si]#[Al].[Si]#[Al].[Al]=[Si]=[Al] LKTZODAHLMBGLG-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/02—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
- B21J5/00—Methods for forging, hammering, or pressing; Special equipment or accessories therefor
- B21J5/02—Die forging; Trimming by making use of special dies ; Punching during forging
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
- C22F1/183—High-melting or refractory metals or alloys based thereon of titanium or alloys based thereon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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Abstract
本发明公开了一种具有凹面的靶材背板的制造方法,包括:平板坯料退火:在真空环境或惰性气体环境中,对平板坯料进行退火,退火温度为380℃至860℃,退火时间为0.4h至4.1h,形成退火平板坯料;锻打成型:在与以上步骤中退火温度相同的条件下,使用具有凸起的锻造模具多次锻打退火平板坯料,直到退火平板坯料具有与锻造模具契合的凹面后停止锻打,形成凹面坯料;凹面坯料退火:在真空环境或惰性气体环境中,对凹面坯料进行退火,退火温度不高于平板坯料退火步骤中的退火温度,退火时间不低于平板坯料退火步骤中的退火时间,形成具有凹面的靶材背板。这种具有凹面的靶材背板的制造方法能够以较为简单经济的工艺制造出性能良好的靶材背板。
The invention discloses a method for manufacturing a target back plate with a concave surface. 0.4h to 4.1h, form the annealed flat blank; forging forming: under the same conditions as the annealing temperature in the above step, use the forging die with protrusions to forge the annealed flat blank for several times until the annealed flat blank has the same thickness as the forging die. After the concave surface that fits, stop forging to form a concave billet; annealing the concave billet: anneal the concave billet in a vacuum environment or an inert gas environment, the annealing temperature is not higher than the annealing temperature in the annealing step of the flat billet, and the annealing time is not less than The annealing time in the annealing step of the flat blank forms a target backing plate with a concave surface. The method for manufacturing a target backplane with a concave surface can manufacture a target backplane with good performance in a relatively simple and economical process.
Description
技术领域technical field
本发明涉及半导体技术领域,尤其涉及一种具有凹面的靶材背板的制造方法。The invention relates to the technical field of semiconductors, and in particular, to a method for manufacturing a target backplane with a concave surface.
背景技术Background technique
各种类型的溅射薄膜材料在半导体集成电路(VLSI)、光碟、平面显示器以及工件的表面涂层等方面都得到了广泛的应用,20世纪90年代以来,溅射靶材及溅射技术的同步发展,极大地满足了各种新型电子元器件发展的需求。Various types of sputtering thin film materials have been widely used in semiconductor integrated circuits (VLSI), optical discs, flat-panel displays, and surface coatings of workpieces. Since the 1990s, the development of sputtering targets and sputtering technology has The simultaneous development has greatly satisfied the needs of the development of various new electronic components.
溅射是制备薄膜材料的主要技术之一,溅射技术利用离子源产生的离子,在真空中经过加速聚集而形成高速度能的离子束流,离子束流轰击靶材表面,由于动量转换原理,靶材上的原子以较高的动能脱离靶面溅射出来飞向基片,从而在基片上淀积成膜。Sputtering is one of the main technologies for preparing thin film materials. The sputtering technology uses ions generated by an ion source to form a high-speed energy ion beam through accelerated aggregation in a vacuum. The ion beam bombards the surface of the target material. Due to the principle of momentum conversion. , the atoms on the target are sputtered from the target surface with high kinetic energy and fly to the substrate, thereby depositing a film on the substrate.
靶材由靶坯和背板焊接而成,其中靶坯是高速离子束流轰击的目标材料,主要由高纯度稀有金属制成;而背板主要起到固定靶坯的作用。由于高纯度的稀有金属强度较低,而溅射过程需要在专用的机台内完成,且机台内部为高电压、高真空环境,背板需要具备良好的性能。The target material is welded by a target blank and a backing plate, wherein the target blank is the target material bombarded by high-speed ion beams, and is mainly made of high-purity rare metals; and the backing plate mainly plays the role of fixing the target blank. Due to the low strength of high-purity rare metals, and the sputtering process needs to be completed in a dedicated machine, and the inside of the machine is a high-voltage and high-vacuum environment, the backplane needs to have good performance.
在导电性能方面,导电性能越好,溅射平稳性越好,短路等异常电路现象越少,靶材一旦发生短路现象,会瞬间产生巨大的热量,一般的铝合金靶材熔点较低,在短路热量的作用下容易发生局部熔融现象,形成熔洞和变形现象。而现有背板,无氧铜材质的导电率一般在51ms/m-55ms/m左右,铝合金材质的导电率一般为20ms/m左右,发生短路现象的概率较大,容易造成溅射靶材损坏。In terms of electrical conductivity, the better the electrical conductivity, the better the sputtering stability, and the less abnormal circuit phenomena such as short circuits. Once the short circuit occurs in the target, it will instantly generate huge heat. Under the action of short-circuit heat, local melting is prone to occur, forming molten holes and deformation. For the existing backplane, the conductivity of oxygen-free copper material is generally about 51ms/m-55ms/m, and the conductivity of aluminum alloy material is generally about 20ms/m. material damage.
此外,在制造工艺方面,现在制造凹面背板时,一般会采用机加工在实心坯料挖除材料形成凹槽的方式,去除的材料可以占到坯料质量的70%,材料利用率低。这种方式对于昂贵的背板材料而言,浪费严重,成本过高,且加工耗时长,刀具损耗大。其它的制造工艺,例如铸造等工艺中,流程条件复杂,很难以较低的成本制造出导电率更高的背板。In addition, in terms of manufacturing process, when manufacturing concave backplanes, machining is generally used to excavate material from solid blanks to form grooves. The removed materials can account for 70% of the blank mass, and the material utilization rate is low. This method has serious waste, high cost, long processing time and large tool loss for the expensive backing material. In other manufacturing processes, such as casting, the process conditions are complex, and it is difficult to manufacture a backplane with higher conductivity at a lower cost.
发明内容SUMMARY OF THE INVENTION
为了克服现有技术的不足,解决上述技术问题,本发明的目的在于提供一种具有凹面的靶材背板的制造方法,其能够以较为简单经济的工艺制造出性能良好的靶材背板。In order to overcome the deficiencies of the prior art and solve the above-mentioned technical problems, the purpose of the present invention is to provide a manufacturing method of a target backplane with a concave surface, which can manufacture a target backplane with good performance in a relatively simple and economical process.
本发明的目的采用如下技术方案实现:The purpose of the present invention adopts following technical scheme to realize:
一种具有凹面的靶材背板的制造方法,包括以下步骤:A method for manufacturing a target backplane with a concave surface, comprising the following steps:
平板坯料退火:所述平板坯料为金属平板坯料,在真空环境或惰性气体环境中,对所述平板坯料进行退火,退火温度为380℃至860℃,退火时间为0.4h至4.1h,形成退火平板坯料;Flat blank annealing: The flat blank is a metal flat blank. The flat blank is annealed in a vacuum environment or an inert gas environment. flat blank;
锻打成型:在与以上步骤中退火温度相同的条件下,使用具有凸起的锻造模具多次锻打所述退火平板坯料,直到所述退火平板坯料具有与所述锻造模具契合的凹面后停止锻打,形成凹面坯料;Forging and forming: under the same conditions as the annealing temperature in the above step, the annealed flat blank is forged several times using a forging die with protrusions until the annealed flat blank has a concave surface that fits with the forging die. Forging to form a concave blank;
凹面坯料退火:在真空环境或惰性气体环境中,对所述凹面坯料进行退火,退火温度不高于所述平板坯料退火步骤中的退火温度,退火时间不低于所述平板坯料退火步骤中的退火时间,形成具有凹面的靶材背板。Concave billet annealing: anneal the concave billet in a vacuum environment or an inert gas environment, the annealing temperature is not higher than the annealing temperature in the annealing step of the flat billet, and the annealing time is not less than Annealing time to form a target backplate with a concave surface.
进一步地,所述锻造模具包括上模和下模,所述上模的下表面具有凹槽,所述下模的上表面具有凸起,所述凸起与凹槽匹配;Further, the forging die includes an upper die and a lower die, the lower surface of the upper die has grooves, the upper surface of the lower die has protrusions, and the protrusions are matched with the grooves;
在所述锻打成型步骤中,使用具有凸起的锻造模具多次锻打所述退火平板坯料具体包括以下步骤:In the forging forming step, forging the annealed flat blank for multiple times by using a forging die with protrusions specifically includes the following steps:
所述下模以凸起朝上的方式放置于平台上,所述退火平板坯料放置于所述凸起的上表面,所述上模位于所述退火平板坯料的上方,使用空气锤多次捶打所述上模,使得所述上模锻打所述退火平板坯料。The lower mold is placed on the platform with the protrusion facing upward, the annealed flat blank is placed on the upper surface of the protrusion, the upper mold is located above the annealed flat blank, and the annealed flat blank is beaten several times with an air hammer. the upper die so that the upper die forges the annealed flat blank.
进一步地,在所述凹面坯料退火步骤之后,还包括粗糙度加工步骤如下:Further, after the step of annealing the concave billet, it also includes the steps of roughness processing as follows:
对所述具有凹面的靶材背板的表面进行粗糙度加工,使其表面的粗糙度为Ra0.32μm至Ra0.61μm。Roughness processing is performed on the surface of the target backing plate having the concave surface, so that the surface roughness is Ra0.32 μm to Ra0.61 μm.
进一步地,在所述锻打成型步骤中,每次锻打的锻打力为3kN至15kN,每次锻打时所述锻造模具下降的速度为1mm/s至15mm/s。Further, in the forging and forming step, the forging force of each forging is 3 kN to 15 kN, and the speed of the forging die falling during each forging is 1 mm/s to 15 mm/s.
进一步地,所述平板坯料为无氧铜坯料或铜合金坯料。Further, the flat blank is an oxygen-free copper blank or a copper alloy blank.
进一步地,所述平板坯料退火步骤中的退火温度为640℃至690℃,退火时间为1.8至3.2h;所述锻打成型步骤中,每次锻打的锻打力为5kN至8kN,每次锻打时所述锻造模具下降的速度为3mm/s至15mm/s;所述凹面坯料退火步骤中的退火温度为640℃至690℃,退火时间为1.8h至3.2h。Further, the annealing temperature in the flat blank annealing step is 640°C to 690°C, and the annealing time is 1.8 to 3.2 hours; in the forging and forming step, the forging force of each forging is 5kN to 8kN, and each forging is 5kN to 8kN. The descending speed of the forging die during the first forging is 3mm/s to 15mm/s; the annealing temperature in the step of annealing the concave billet is 640°C to 690°C, and the annealing time is 1.8h to 3.2h.
进一步地,所述平板坯料为铝合金坯料。Further, the flat blank is an aluminum alloy blank.
进一步地,所述平板坯料退火步骤中的退火温度为380℃至450℃,退火时间为0.4至0.6h;所述锻打成型步骤中,每次锻打的锻打力为3kN至4kN,每次锻打时所述锻造模具下降的速度为1mm/s至8mm/s;所述凹面坯料退火步骤中的退火温度为340℃至370℃,退火时间为1.5h至2.5h。Further, the annealing temperature in the flat blank annealing step is 380°C to 450°C, and the annealing time is 0.4 to 0.6 h; in the forging and forming step, the forging force of each forging is 3 kN to 4 kN, and each forging is 3 kN to 4 kN. The descending speed of the forging die during the first forging is 1mm/s to 8mm/s; the annealing temperature in the step of annealing the concave billet is 340°C to 370°C, and the annealing time is 1.5h to 2.5h.
进一步地,所述平板坯料为钛合金坯料或钼坯料。Further, the flat blank is a titanium alloy blank or a molybdenum blank.
本发明中提供的一个或多个技术方案,至少具有如下的技术效果或优点:One or more technical solutions provided in the present invention have at least the following technical effects or advantages:
(1)通过平板坯料退火步骤增加了平板坯料的塑性,合适的退火温度和退火时间避免了晶粒的异常长大,得到的退火平板坯料中的微观结构均匀性好。更重要地是,结合在真空环境或惰性气体的环境避免氧化的效果,退火得到的平板坯料的电导率能够达到比现有技术中更高的水平,平均提升幅度在7%至20%左右,从而大幅降低溅射时短路现象发生的概率;(1) The ductility of the flat blank is increased through the annealing step of the flat blank, and the abnormal growth of grains is avoided by appropriate annealing temperature and annealing time, and the obtained annealed flat blank has good microstructure uniformity. More importantly, combined with the effect of avoiding oxidation in a vacuum environment or an inert gas environment, the electrical conductivity of the annealed slab can reach a higher level than that in the prior art, with an average increase of about 7% to 20%. Thereby greatly reducing the probability of short-circuit phenomenon during sputtering;
(2)由于平板坯料退火步骤中提升了材料的塑性,便于运用锻打成型的方式来获得靶材背板中凹面的形状,在与平板坯料退火步骤中退火温度相同的条件,形成的凹面坯料能够基本保持上一步中得到的高电导率等性能;此外,这种方式对材料的浪费更少,制造成本得以大幅降低。(2) Since the plasticity of the material is improved in the annealing step of the flat blank, it is convenient to use the method of forging to obtain the shape of the concave surface in the back plate of the target material. Under the same conditions as the annealing temperature in the annealing step of the flat blank, the formed concave blank The high conductivity and other properties obtained in the previous step can be basically maintained; in addition, this method wastes less material and greatly reduces the manufacturing cost.
(3)凹面坯料退火是对整个材料的二次退火,使得整体材料的高温性能更强,且综合力学性能更强,当应用于溅射时,其稳定性更好,形成的溅射薄膜材料品质更高。(3) The annealing of the concave billet is the secondary annealing of the entire material, which makes the high temperature performance of the overall material stronger and the comprehensive mechanical properties stronger. When applied to sputtering, its stability is better, and the sputtered film material formed Higher quality.
因此,本发明提供了一种较为简单易行的具有凹面的靶材背板的制造方法,既能降低制造的成本,又能得到比现有技术中性能更加优异的靶材背板,有利于降低现在市场上高昂的背板价格,具有很强的实用价值。Therefore, the present invention provides a relatively simple and feasible method for manufacturing a target backplane with a concave surface, which can not only reduce the manufacturing cost, but also obtain a target backplane with better performance than the prior art, which is beneficial to It has a strong practical value to reduce the high price of backplanes on the market.
附图说明Description of drawings
图1为本发明的一种具有凹面的靶材背板的制造方法的流程框图;1 is a flow chart of a method for manufacturing a target backplane with a concave surface according to the present invention;
图2为本发明的一种具有凹面的靶材背板的制造方法中锻造模具的使用示意图。2 is a schematic diagram of the use of a forging die in a method for manufacturing a target backing plate with a concave surface of the present invention.
具体实施方式Detailed ways
下面,结合附图以及具体实施方式,对本发明做进一步描述,需要说明的是,在不相冲突的前提下,以下描述的各实施例之间或各技术特征之间可以任意组合形成新的实施例。The present invention will be further described below with reference to the accompanying drawings and specific embodiments. It should be noted that, on the premise of no conflict, the embodiments or technical features described below can be combined arbitrarily to form new embodiments. .
在本申请的描述中,需要理解的是,术语“中心”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。In the description of this application, it should be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", The orientation or positional relationship indicated by "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying The device or element referred to must have a particular orientation, be constructed and operate in a particular orientation, and therefore should not be construed as a limitation of the present application.
术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中,除非另有说明,“多个”的含义是两个或两个以上。The terms "first" and "second" are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may expressly or implicitly include one or more of that feature. In the description of this application, unless stated otherwise, "plurality" means two or more.
需要说明的是,当元件被称为“固定于”另一个元件,它可以直接在另一个元件上,或者也可以存在居中的元件。当一个元件被认为是“连接”另一个元件,它可以是直接连接到另一个元件或者可能存在居中元件。It should be noted that when an element is referred to as being "fixed to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may be present.
除非另有定义,本文所使用的所有的技术术语和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在发明的说明书中所使用的术语只是为了描述具体的实施例的目的,不是旨在于限制本发明。本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the present invention. The terms used herein in the description of the invention are for the purpose of describing specific embodiments only and are not intended to limit the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
本发明提供了一种较为简单易行的具有凹面的靶材背板的制造方法,既能降低制造的成本,又能得到比现有技术中性能更加优异的靶材背板,有利于降低现在市场上高昂的背板价格,具有很强的实用价值。The invention provides a relatively simple and feasible method for manufacturing a target backplane with a concave surface, which can not only reduce the manufacturing cost, but also obtain a target backplane with better performance than the prior art, which is beneficial to reducing the current The high price of the backplane in the market has a strong practical value.
图1示出了本发明的一种具有凹面的靶材背板的制造方法,包括平板坯料退火、锻打成型和凹面坯料退火步骤:1 shows a method for manufacturing a target backing plate with a concave surface according to the present invention, which includes the steps of annealing flat blanks, forging and forming and annealing concave blanks:
平板坯料退火步骤包括:在真空环境或惰性气体环境中,对所述平板坯料进行退火,退火温度为380℃至860℃,退火时间为0.4h至4.1h,形成退火平板坯料3;通过平板坯料退火步骤增加了平板坯料的塑性,380℃至860℃的退火温度,0.4h至4.1h的退火时间避免了晶粒的异常长大,得到的退火平板坯料3中的微观结构均匀性好。更重要地是,结合在真空环境或惰性气体的环境避免氧化的效果,退火得到的平板坯料的电导率能够达到比现有技术中更高的水平,平均提升幅度在5%至20%左右,从而大幅降低溅射时发生短路现象的概率;The flat blank annealing step includes: annealing the flat blank in a vacuum environment or an inert gas environment, the annealing temperature is 380°C to 860°C, and the annealing time is 0.4h to 4.1h to form an annealed flat blank 3; The annealing step increases the plasticity of the slab, the annealing temperature of 380°C to 860°C, and the annealing time of 0.4h to 4.1h avoids abnormal grain growth, and the obtained annealed
锻打成型步骤包括:在与以上步骤中退火温度相同的条件下,使用具有凸起12的锻造模具多次锻打所述退火平板坯料3,直到所述退火平板坯料3具有与所述锻造模具契合的凹面后停止锻打,形成凹面坯料;由于平板坯料退火步骤中提升了材料的塑性,便于运用锻打成型的方式来获得靶材背板中凹面的形状,在与平板坯料退火步骤中退火温度相同的条件,形成的凹面坯料能够基本保持上一步中得到的高电导率等性能;其中,每次锻打的锻打力优选为3kN至15kN,每次锻打时所述锻造模具下降的速度为1mm/s至15mm/s,可以使得退火平板坯料3在受到锻打的过程中稳定地发生变形,微观结构中的均匀平衡性所受影响较小。此外,这种方式对材料的浪费更少,制造成本得以大幅降低。其中,锻打力的大小根据金属平板自身的硬度来选择,自身硬度越大的金属平板在此范围内采用越大的锻打力。The forging forming step includes: under the same conditions as the annealing temperature in the above steps, using a forging die with
凹面坯料退火步骤包括:在真空环境或惰性气体环境中,对所述凹面坯料进行退火,退火温度不高于所述平板坯料退火步骤中的退火温度,退火时间不低于所述平板坯料退火步骤中的退火时间,形成具有凹面的靶材背板。凹面坯料退火是对整个坯料的再次退火,在平板坯料退火(第一次退火)的空冷时使得亚稳定相保留下来,而凹面坯料退火(第二次退火)在保温时,相较于平板坯料退火(第一次退火)的退火温度不会更高,甚至会有所降低,退火时间不会更低,甚至会有所增长,可以使得金属内部晶粒球化程度进一步提高,次生α片层也更加粗大,使得整体材料的高温性能更强,且综合力学性能更强,当应用于溅射时,其稳定性更好,形成的溅射薄膜材料品质更高。The step of annealing the concave billet includes: annealing the concave billet in a vacuum environment or an inert gas environment, the annealing temperature is not higher than the annealing temperature in the annealing step of the flat billet, and the annealing time is not lower than the annealing step of the flat billet annealing time in , a target backplate with a concave surface is formed. The concave billet annealing is the re-annealing of the entire billet, and the metastable phase is retained during the air cooling of the flat billet annealing (first annealing), while the concave billet annealing (second annealing) during the holding time, compared to the flat billet. The annealing temperature of annealing (the first annealing) will not be higher, or even lower, and the annealing time will not be lower, or even increase, which can further improve the degree of spheroidization of the internal grains of the metal, and the secondary α sheet The layer is also thicker, which makes the high temperature performance of the overall material stronger and the comprehensive mechanical properties stronger. When applied to sputtering, its stability is better, and the quality of the sputtered film material formed is higher.
如图2所示,作为本实施例中锻造模具的优选方案,所述锻造模具包括上模1和下模2,所述上模1的下表面具有凹槽11,所述下模2的上表面具有凸起12,所述凸起12与凹槽11匹配。这种模具的上模1的凹槽11和下模2的凸起12刚好限定出一个具有凹面的板型空间,当用于锻打退火平板坯料3时,能够使得平板坯料呈现与板型空间相同的形状。具体地,本实施例中的凹槽11和凸起12的纵剖面均呈梯形,便于脱模和减少应力集中。As shown in FIG. 2 , as a preferred solution of the forging die in this embodiment, the forging die includes an upper die 1 and a
采用上述锻造模具的锻打成型步骤中,使用具有凸起12的锻造模具多次锻打所述退火平板坯料3优选具体包括以下步骤:In the forging forming step using the above-mentioned forging die, using the forging die with the
所述下模2以凸起12朝上的方式放置于平台上,所述退火平板坯料3放置于所述凸起12上表面,所述上模1位于所述退火平板坯料3的上方,使用空气锤多次捶打所述上模1,使得所述上模1锻打所述退火平板坯料3。空气锤以压缩空气为动力,方便根据气压调节捶打力度和频率,操作灵活,非常适合尺寸较小的靶材背板的锻造。The
为了更好地满足靶材背板对粗糙度的要求,去除锻造后可能再表面出现的不平整凸起12,本实施例优选在所述凹面坯料退火步骤之后,还包括粗糙度加工步骤如下:In order to better meet the roughness requirements of the target backing plate and remove the
对所述具有凹面的靶材背板的表面进行粗糙度加工,使其表面的粗糙度为Ra0.32μm至Ra0.61μm。此参数范围的粗糙度既可以满足背板对粗糙度的要求,也使得背板表面接近镜面,加工后产生的碎屑可以快速脱离靶材背板表面,避免刮伤损坏。Roughness processing is performed on the surface of the target backing plate having the concave surface, so that the surface roughness is Ra0.32 μm to Ra0.61 μm. The roughness in this parameter range can not only meet the roughness requirements of the backing plate, but also make the surface of the backing plate close to the mirror surface, and the debris generated after processing can quickly separate from the surface of the target backing plate to avoid scratches and damage.
粗糙度的加工具有多种方式,本实施例优选采用车削加工的方式,具体包括以下步骤:There are many ways to process the roughness. In this embodiment, the turning process is preferably used, which specifically includes the following steps:
使用数控机床,对所述靶材背板的表面进行车削加工,所述车削加工的转速为300RPM至600RPM,进刀量为0.1mm以下,走刀速度为0.08mm/min至0.12mm/min。按照此参数能够在较短的时间内加工出符合要求的粗糙度,提高生产效率。Using a numerically controlled machine tool, the surface of the target backing plate is turned, the turning speed is 300RPM to 600RPM, the feed amount is less than 0.1mm, and the cutting speed is 0.08mm/min to 0.12mm/min. According to this parameter, the required roughness can be processed in a short time, and the production efficiency can be improved.
所述平板坯料退火步骤和凹面坯料退火步骤中,本实施例优选退火的冷却方法为在随炉冷却。这种方式虽然速度有所降低,但是既可以保证在退火过程中不用开炉与空气接触,防止氧化,又避免了水冷过程中,可能发生的金属表面与水中的元素发生反应。In the flat slab annealing step and the concave slab annealing step, the preferred cooling method for annealing in this embodiment is cooling with the furnace. Although the speed of this method is reduced, it can not only ensure that the furnace is not in contact with the air during the annealing process to prevent oxidation, but also avoid the possible reaction between the metal surface and the elements in the water during the water cooling process.
本实施例中的平板坯料可为多种材质,本实施例提供的第一种平板坯料为无氧铜坯料或铜合金坯料。The flat blank in this embodiment can be made of various materials, and the first flat blank provided in this embodiment is an oxygen-free copper blank or a copper alloy blank.
结合铜的物理性质,其硬度和熔点都较高,为了以无氧铜坯料或铜合金坯料制造出的靶材背板具备上述的性能和优势,优选无氧铜坯料或铜合金坯料在所述平板坯料退火步骤中的退火温度为640℃至690℃,退火时间为1.8至3.2h,经过此步骤之后电导率比现有的同材质靶材背板高8%至16%;所述锻打成型步骤中,每次锻打的锻打力为5kN至8kN,每次锻打时所述锻造模具下降的速度为3mm/s至15mm/s;所述凹面坯料退火步骤中的退火温度为640℃至690℃,退火时间为1.8h至3.2h,经过此步骤之后,相较于上一步骤而言,硬度下降33%至50%,延伸率上升50%左右。Combined with the physical properties of copper, its hardness and melting point are relatively high. In order to have the above-mentioned properties and advantages of the target backplane made of oxygen-free copper blanks or copper alloy blanks, it is preferred that the oxygen-free copper blanks or copper alloy blanks are described in the The annealing temperature in the annealing step of the flat blank is 640° C. to 690° C., and the annealing time is 1.8 to 3.2 hours. After this step, the electrical conductivity is 8% to 16% higher than that of the existing target backing plate of the same material; In the forming step, the forging force of each forging is 5kN to 8kN, and the speed of the falling of the forging die is 3mm/s to 15mm/s during each forging; the annealing temperature in the step of annealing the concave billet is 640 ℃ to 690 ℃, the annealing time is 1.8h to 3.2h, after this step, compared with the previous step, the hardness decreases by 33% to 50%, and the elongation increases by about 50%.
下表为以直径为400mm,厚15mm的无氧铜坯料和C18000铬镍硅铜坯料为例,对以上所述的制造方法进行说明:The following table illustrates the above manufacturing method by taking oxygen-free copper blanks with a diameter of 400mm and a thickness of 15mm and C18000 chrome-nickel-silicon copper blanks as examples:
上述尺寸的无氧铜坯料和C18000铬镍硅铜坯料,通过本实施例中的方法可以制作40mm总厚,直径为368mm的成品靶材背板,若使用传统的去除材料的加工方法,需要准备42mm厚度,直径为375mm的平板坯料,重量约为42kg;但是本实施例中的平板坯料仅约为17kg,能够节省一半以上的材料。在电导率方面,现有的无氧铜背板的电导率为51ms/m至55ms/m左右,而本发明中的电导率能够达到59ms/m以上,提升率为7%至16%;现有的C18000铬镍硅铜背板的电导率为31ms/m至32ms/m左右,而本发明中的电导率能够达到34ms/m以上,提升率为5%至10%。Oxygen-free copper blanks and C18000 chrome-nickel-silicon-copper blanks of the above dimensions can be produced by the method in this embodiment to produce a finished target backplane with a total thickness of 40mm and a diameter of 368mm. A flat blank with a thickness of 42 mm and a diameter of 375 mm weighs about 42 kg; however, the flat blank in this embodiment is only about 17 kg, which can save more than half of the material. In terms of electrical conductivity, the electrical conductivity of the existing oxygen-free copper backplane is about 51ms/m to 55ms/m, while the electrical conductivity of the present invention can reach more than 59ms/m, and the improvement rate is 7% to 16%; The conductivity of some C18000 chrome-nickel-silicon-copper backplanes is about 31ms/m to 32ms/m, while the conductivity of the present invention can reach more than 34ms/m, and the improvement rate is 5% to 10%.
本实施例提供的第二种平板坯料为铝合金坯料。The second type of flat blank provided in this embodiment is an aluminum alloy blank.
铝的硬度和熔点等均低于铜,铝合金坯料在所述平板坯料退火步骤中的退火温度为380℃至450℃,退火时间为0.4至0.6h,经过此步骤之后电导率比现有的同材质靶材背板高20%左右;所述锻打成型步骤中,每次锻打的锻打力为3kN至4kN,每次锻打时所述锻造模具下降的速度为1mm/s至8mm/s;所述凹面坯料退火步骤中的退火温度为340℃至370℃,退火时间为1.5h至2.5h,经过此步骤之后,相较于上一步骤而言,硬度下降25%至33%,延伸率上升33%至100%左右。The hardness and melting point of aluminum are lower than those of copper. The annealing temperature of the aluminum alloy billet in the flat billet annealing step is 380°C to 450°C, and the annealing time is 0.4 to 0.6h. After this step, the electrical conductivity is higher than the existing one. The height of the target material of the same material is about 20% higher; in the forging and forming step, the forging force of each forging is 3kN to 4kN, and the speed of the forging die during each forging is 1mm/s to 8mm. /s; the annealing temperature in the annealing step of the concave billet is 340°C to 370°C, and the annealing time is 1.5h to 2.5h. After this step, compared with the previous step, the hardness decreases by 25% to 33% , the elongation increased from 33% to about 100%.
下表为以直径为400mm,厚15mm的6061铝合金坯料和硅化铝坯料为例,对以上所述的制造方法进行说明:The following table illustrates the above-mentioned manufacturing method by taking 6061 aluminum alloy billet and aluminum silicide billet with a diameter of 400mm and a thickness of 15mm as examples:
在电导率方面,现有的6061铝合金背板和6061铝合金背板的电导率为20ms/m左右,而本发明中的电导率能够达到24ms/m以上,提升率为20%左右。In terms of electrical conductivity, the electrical conductivity of the existing 6061 aluminum alloy backplane and 6061 aluminum alloy backplane is about 20ms/m, while the electrical conductivity in the present invention can reach more than 24ms/m, and the improvement rate is about 20%.
本实施例提供的第三种平板坯料为钛合金坯料(包括纯钛),优选为Ta1钛。钛合金具有强度高而密度小,机械性能好,韧性和抗腐蚀性能都很好的特点;其中Ta1钛是工业纯钛,杂质含量比化学纯钛更多,因此强度和硬度也稍高,同时保留着较好的塑性,适合用过靶材背板。The third flat blank provided in this embodiment is a titanium alloy blank (including pure titanium), preferably Ta1 titanium. Titanium alloy has the characteristics of high strength and low density, good mechanical properties, good toughness and corrosion resistance; among them, Ta1 titanium is industrial pure titanium, and its impurity content is more than that of chemical pure titanium, so its strength and hardness are slightly higher. It retains good plasticity and is suitable for used target backplanes.
钛合金坯料在所述退火步骤中的退火温度为780℃至820℃,优选为800℃,退火时间为2h至3h,优选为2.5h,经过此步骤之后电导率能达到2.45,比现有的同材质靶材背板高5%至10%左右;所述锻打成型步骤中,每次锻打的锻打力为10kN至15kN,每次锻打时所述锻造模具下降的速度为3mm/s至6mm/s,优选5mm;所述凹面坯料退火步骤中的退火温度为780℃至820℃,优选800℃,退火时间为2h至3h,优选为2.5h,经过此步骤之后,相较于上一步骤而言,硬度从380HV下降至340HV,下降11%左右,延伸率从8%上升至12%,上升50%左右。The annealing temperature of the titanium alloy billet in the annealing step is 780°C to 820°C, preferably 800°C, and the annealing time is 2h to 3h, preferably 2.5h. After this step, the electrical conductivity can reach 2.45, which is higher than the existing The height of the back plate of the target material of the same material is about 5% to 10%; in the forging and forming step, the forging force of each forging is 10kN to 15kN, and the speed of the forging die during each forging is 3mm/ s to 6mm/s, preferably 5mm; the annealing temperature in the step of annealing the concave billet is 780°C to 820°C, preferably 800°C, and the annealing time is 2h to 3h, preferably 2.5h, after this step, compared with In the previous step, the hardness decreased from 380HV to 340HV, a decrease of about 11%, and the elongation increased from 8% to 12%, an increase of about 50%.
本实施例提供的第四种平板坯料为钼坯料。钼的化学性质稳定,且熔点高达2620℃,具有优秀的高温机械稳定性,因此非常适合用于靶材背板。The fourth type of flat blank provided in this embodiment is a molybdenum blank. Molybdenum is chemically stable and has a melting point of up to 2620°C. It has excellent high temperature mechanical stability, so it is very suitable for target backplanes.
钼坯料在所述退火步骤中的退火温度为840℃至860℃,优选为850℃,退火时间为3.5h至4.5h,优选为4小时,经过此步骤之后电导率能达到18.47,比现有的同材质靶材背板高,5%至10%左右;所述锻打成型步骤中,每次锻打的锻打力为10kN至15kN,每次锻打时所述锻造模具下降的速度为1mm/s至3mm/s,优选2mm;所述凹面坯料退火步骤中的退火温度为840℃至860℃,优选为850℃,退火时间为3.5h至4.5h,优选为4小时,经过此步骤之后,相较于上一步骤而言,硬度从420HV下降至400HV,下降5%左右,延伸率从3%上升至8%,上升167%左右。The annealing temperature of the molybdenum blank in the annealing step is 840°C to 860°C, preferably 850°C, and the annealing time is 3.5h to 4.5h, preferably 4 hours. After this step, the electrical conductivity can reach 18.47, which is higher than the existing The height of the back plate of the target material of the same material is about 5% to 10%; in the forging forming step, the forging force of each forging is 10kN to 15kN, and the speed of the forging die during each forging is 10kN to 15kN. 1mm/s to 3mm/s, preferably 2mm; the annealing temperature in the step of annealing the concave billet is 840°C to 860°C, preferably 850°C, and the annealing time is 3.5h to 4.5h, preferably 4 hours, after this step After that, compared with the previous step, the hardness decreased from 420HV to 400HV, a decrease of about 5%, and the elongation increased from 3% to 8%, an increase of about 167%.
上述实施方式仅为本发明的优选实施方式,不能以此来限定本发明保护的范围,本领域的技术人员在本发明的基础上所做的任何非实质性的变化及替换均属于本发明所要求保护的范围。The above-mentioned embodiments are only preferred embodiments of the present invention, and cannot be used to limit the scope of protection of the present invention. Any insubstantial changes and substitutions made by those skilled in the art on the basis of the present invention belong to the scope of the present invention. Scope of protection claimed.
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