CN113106362A - Manufacturing method of target material back plate with concave surface - Google Patents
Manufacturing method of target material back plate with concave surface Download PDFInfo
- Publication number
- CN113106362A CN113106362A CN202110293451.9A CN202110293451A CN113106362A CN 113106362 A CN113106362 A CN 113106362A CN 202110293451 A CN202110293451 A CN 202110293451A CN 113106362 A CN113106362 A CN 113106362A
- Authority
- CN
- China
- Prior art keywords
- annealing
- blank
- forging
- flat
- concave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/02—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
- B21J5/00—Methods for forging, hammering, or pressing; Special equipment or accessories therefor
- B21J5/02—Die forging; Trimming by making use of special dies ; Punching during forging
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
- C22F1/183—High-melting or refractory metals or alloys based thereon of titanium or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Forging (AREA)
Abstract
The invention discloses a manufacturing method of a target material back plate with a concave surface, which comprises the following steps: annealing the flat blank: annealing the flat blank in a vacuum environment or an inert gas environment, wherein the annealing temperature is 380-860 ℃, and the annealing time is 0.4-4.1 h, so as to form an annealed flat blank; forging and molding: forging the annealed flat blank for multiple times by using a forging die with a bulge under the condition of the same annealing temperature as that in the step, and stopping forging until the annealed flat blank has a concave surface matched with the forging die to form a concave surface blank; annealing the concave blank: and annealing the concave blank in a vacuum environment or an inert gas environment, wherein the annealing temperature is not higher than the annealing temperature in the annealing step of the flat blank, and the annealing time is not lower than the annealing time in the annealing step of the flat blank, so that the target backing plate with the concave surface is formed. The manufacturing method of the target back plate with the concave surface can manufacture the target back plate with good performance by a simple and economical process.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a manufacturing method of a target material back plate with a concave surface.
Background
Various types of sputtering film materials are widely applied to aspects such as semiconductor integrated circuits (VLSI), compact disks, flat panel displays and surface coatings of workpieces, and the like, so that the development of sputtering targets and sputtering technologies is synchronous in the past 20 th century and 90 s, and the development requirements of various novel electronic components are greatly met.
Sputtering is one of the main techniques for preparing thin film materials, the sputtering technique utilizes ions generated by an ion source to form ion beam flow with high-speed energy through accelerated aggregation in vacuum, the ion beam flow bombards the surface of a target material, and due to the momentum transfer principle, atoms on the target material are sputtered out of the target surface with high kinetic energy to fly to a substrate, so that the atoms are deposited on the substrate to form a film.
The target material is formed by welding a target blank and a back plate, wherein the target blank is a target material bombarded by high-speed ion beams and mainly made of high-purity rare metal; and the backing plate mainly plays a role in fixing the target blank. Because the high-purity rare metal has low strength, the sputtering process needs to be finished in a special machine, the inside of the machine is in a high-voltage and high-vacuum environment, and the back plate needs to have good performance.
In the aspect of conductivity, the better the conductivity is, the better the sputtering stability is, the fewer abnormal circuit phenomena such as short circuit and the like are, once the target material has the short circuit phenomenon, huge heat can be generated instantly, the melting point of a common aluminum alloy target material is lower, and the phenomenon of local melting is easy to occur under the action of the short circuit heat, so that the phenomena of fusion holes and deformation are formed. In the existing back plate, the conductivity of the oxygen-free copper material is about 51 ms/m-55 ms/m generally, the conductivity of the aluminum alloy material is about 20ms/m generally, the probability of short circuit is high, and the sputtering target material is easy to damage.
In addition, in the manufacturing process, when the concave back plate is manufactured at present, a mode of removing materials from a solid blank by machining to form a groove is generally adopted, the removed materials can account for 70% of the mass of the blank, and the material utilization rate is low. For expensive back plate materials, the mode has the disadvantages of serious waste, high cost, long processing time and high cutter loss. In other manufacturing processes, such as casting, the process conditions are complicated, and it is difficult to manufacture a back plate with higher conductivity at a lower cost.
Disclosure of Invention
In order to overcome the defects of the prior art and solve the technical problems, the present invention provides a method for manufacturing a target backing plate with a concave surface, which can manufacture a target backing plate with good performance by a simple and economical process.
The purpose of the invention is realized by adopting the following technical scheme:
a manufacturing method of a target backing plate with a concave surface comprises the following steps:
annealing the flat blank: the flat plate blank is a metal flat plate blank, and is annealed in a vacuum environment or an inert gas environment, wherein the annealing temperature is 380-860 ℃, and the annealing time is 0.4-4.1 h, so that an annealed flat plate blank is formed;
forging and molding: forging the annealed flat blank for multiple times by using a forging die with a bulge under the condition of the same annealing temperature as that in the previous step until the annealed flat blank has a concave surface matched with the forging die, and stopping forging to form a concave blank;
annealing the concave blank: and annealing the concave blank in a vacuum environment or an inert gas environment, wherein the annealing temperature is not higher than the annealing temperature in the annealing step of the flat blank, and the annealing time is not lower than the annealing time in the annealing step of the flat blank, so that the target backboard with the concave surface is formed.
Further, the forging die comprises an upper die and a lower die, wherein a groove is formed in the lower surface of the upper die, a protrusion is formed on the upper surface of the lower die, and the protrusion is matched with the groove;
in the forging step, the forging the annealed flat blank multiple times using a forging die having a projection specifically includes the steps of:
the lower die is placed on the platform in a mode that the protrusion faces upwards, the annealing flat blank is placed on the upper surface of the protrusion, the upper die is located above the annealing flat blank, and the upper die is beaten by an air hammer for multiple times, so that the upper die forges the annealing flat blank.
Further, after the concave blank annealing step, the method also comprises the following roughness processing steps:
and carrying out roughness processing on the surface of the target back plate with the concave surface to ensure that the roughness of the surface is Ra0.32 mu m to Ra0.61 mu m.
Further, in the forging forming step, a forging force per one forging is 3kN to 15kN, and a speed at which the forging die descends per one forging is 1mm/s to 15 mm/s.
Further, the flat plate blank is an oxygen-free copper blank or a copper alloy blank.
Further, the annealing temperature in the flat blank annealing step is 640-690 ℃, and the annealing time is 1.8-3.2 h; in the forging forming step, the forging force of each forging is 5kN to 8kN, and the descending speed of the forging die is 3mm/s to 15mm/s during each forging; the annealing temperature in the concave blank annealing step is 640-690 ℃, and the annealing time is 1.8-3.2 h.
Further, the flat plate blank is an aluminum alloy blank.
Further, the annealing temperature in the flat blank annealing step is 380 ℃ to 450 ℃, and the annealing time is 0.4 to 0.6 h; in the forging forming step, the forging force of each forging is 3kN to 4kN, and the descending speed of the forging die is 1mm/s to 8mm/s during each forging; the annealing temperature in the concave blank annealing step is 340-370 ℃, and the annealing time is 1.5-2.5 h.
Further, the flat plate blank is a titanium alloy blank or a molybdenum blank.
One or more technical schemes provided by the invention at least have the following technical effects or advantages:
(1) the plasticity of the flat blank is increased through the flat blank annealing step, abnormal growth of crystal grains is avoided through proper annealing temperature and annealing time, and the microstructure uniformity of the obtained annealed flat blank is good. More importantly, the effect of avoiding oxidation in a vacuum environment or an inert gas environment is combined, the conductivity of the flat blank obtained by annealing can reach a higher level than that in the prior art, and the average lifting amplitude is about 7-20%, so that the probability of short circuit during sputtering is greatly reduced;
(2) the plasticity of the material is improved in the flat blank annealing step, so that the shape of the concave surface in the target material back plate can be conveniently obtained by using a forging forming mode, and the formed concave blank can basically keep the performances of high conductivity and the like obtained in the last step under the condition that the annealing temperature is the same as that in the flat blank annealing step; in addition, the material waste is less in the mode, and the manufacturing cost is greatly reduced.
(3) The concave blank annealing is the secondary annealing of the whole material, so that the high-temperature performance of the whole material is stronger, the comprehensive mechanical property is stronger, the stability is better when the material is applied to sputtering, and the quality of the formed sputtered film material is higher.
Therefore, the invention provides a simple and easy manufacturing method of the target backboard with the concave surface, which can reduce the manufacturing cost, can obtain the target backboard with more excellent performance than the target backboard in the prior art, is favorable for reducing the expensive backboard price in the current market and has strong practical value.
Drawings
FIG. 1 is a flow chart of a method of manufacturing a target backing plate having a concave surface according to the present invention;
fig. 2 is a schematic diagram illustrating the use of a forging die in the manufacturing method of the target backing plate with a concave surface according to the present invention.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and the detailed description, and it should be noted that any combination of the embodiments or technical features described below can be used to form a new embodiment without conflict.
In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a particular orientation, be constructed in a particular orientation, and be operated, and thus should not be construed as limiting the present application.
The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless otherwise specified.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The invention provides a simple and feasible manufacturing method of the target backboard with the concave surface, which can reduce the manufacturing cost, can obtain the target backboard with more excellent performance than the target backboard in the prior art, is favorable for reducing the high backboard price in the current market and has strong practical value.
Fig. 1 shows a manufacturing method of a target backing plate with a concave surface of the invention, which comprises the steps of plate blank annealing, forging forming and concave surface blank annealing:
the flat blank annealing step comprises: annealing the flat blank in a vacuum environment or an inert gas environment, wherein the annealing temperature is 380-860 ℃, and the annealing time is 0.4-4.1 h, so as to form an annealed flat blank 3; the plasticity of the flat blank is increased through the flat blank annealing step, the annealing temperature is 380-860 ℃, the annealing time is 0.4-4.1 h, the abnormal growth of crystal grains is avoided, and the microstructure uniformity of the obtained annealed flat blank 3 is good. More importantly, the effect of avoiding oxidation in a vacuum environment or an inert gas environment is combined, the conductivity of the flat blank obtained by annealing can reach a higher level than that in the prior art, and the average lifting amplitude is about 5 to 20 percent, so that the probability of short circuit during sputtering is greatly reduced;
the forging and molding step comprises: forging the annealed flat blank 3 for multiple times by using a forging die with protrusions 12 under the same annealing temperature as in the above step until the annealed flat blank 3 has a concave surface fitted with the forging die, and stopping forging to form a concave blank; the plasticity of the material is improved in the flat blank annealing step, so that the shape of the concave surface in the target material back plate can be conveniently obtained by using a forging forming mode, and the formed concave blank can basically keep the performances of high conductivity and the like obtained in the last step under the condition that the annealing temperature is the same as that in the flat blank annealing step; the forging force of each forging is preferably 3kN to 15kN, the descending speed of the forging die is 1mm/s to 15mm/s when each forging is carried out, the annealing flat blank 3 can be stably deformed in the forging process, and the influence on the uniformity and balance in the microstructure is small. In addition, the material waste is less in the mode, and the manufacturing cost is greatly reduced. The magnitude of the forging force is selected according to the hardness of the metal flat plate, and the metal flat plate with higher hardness adopts higher forging force in the range.
The concave blank annealing step comprises: and annealing the concave blank in a vacuum environment or an inert gas environment, wherein the annealing temperature is not higher than the annealing temperature in the annealing step of the flat blank, and the annealing time is not lower than the annealing time in the annealing step of the flat blank, so that the target backboard with the concave surface is formed. The concave blank annealing is the re-annealing of the whole blank, the metastable phase is kept during the air cooling of the flat blank annealing (the first annealing), the concave blank annealing (the second annealing) is kept warm, the annealing temperature compared with the flat blank annealing (the first annealing) is not higher, even the metastable phase is reduced, the annealing time is not lower, even the metastable phase is increased, the spheroidization degree of the crystal grains in the metal can be further improved, the secondary alpha sheet layer is thicker, the high-temperature performance of the whole material is stronger, the comprehensive mechanical property is stronger, when the concave blank annealing is applied to sputtering, the stability is better, and the quality of the formed sputtering film material is higher.
As shown in fig. 2, as a preferable scheme of the forging die in the present embodiment, the forging die includes an upper die 1 and a lower die 2, a lower surface of the upper die 1 has a groove 11, an upper surface of the lower die 2 has a protrusion 12, and the protrusion 12 is matched with the groove 11. The recess 11 of the upper die 1 and the projection 12 of the lower die 2 of this die just define a plate-shaped space having a concave surface, which enables the flat blank to take the same shape as the plate-shaped space when used for forging and annealing the flat blank 3. Specifically, the longitudinal sections of the grooves 11 and the protrusions 12 in this embodiment are trapezoidal, which facilitates demolding and reduces stress concentration.
In the forging step using the forging die described above, it is preferable that forging the annealed flat blank 3 a plurality of times using the forging die having the projections 12 specifically includes the steps of:
the lower die 2 is placed on a platform in a mode that the bulges 12 face upwards, the annealing flat blank 3 is placed on the upper surfaces of the bulges 12, the upper die 1 is positioned above the annealing flat blank 3, and the upper die 1 is beaten for multiple times by using an air hammer, so that the annealing flat blank 3 is beaten by the upper die 1. The air hammer takes compressed air as power, the beating force and frequency can be conveniently adjusted according to air pressure, the operation is flexible, and the air hammer is very suitable for forging the target backing plate with small size.
In order to better meet the requirement of the target backing plate on roughness and remove the uneven protrusions 12 which may appear on the surface after forging, the embodiment preferably further comprises the following roughness processing steps after the concave blank annealing step:
and carrying out roughness processing on the surface of the target back plate with the concave surface to ensure that the roughness of the surface is Ra0.32 mu m to Ra0.61 mu m. The roughness of the parameter range can meet the requirement of the backboard on the roughness, the surface of the backboard is close to the mirror surface, and chips generated after processing can be quickly separated from the surface of the target backboard, so that scratching and damage are avoided.
The roughness processing has a plurality of modes, and the present embodiment preferably adopts a turning mode, specifically including the following steps:
and turning the surface of the target back plate by using a numerical control machine, wherein the turning speed is 300RPM to 600RPM, the feed rate is less than 0.1mm, and the feed speed is 0.08mm/min to 0.12 mm/min. According to the parameters, the roughness meeting the requirements can be processed in a short time, and the production efficiency is improved.
In the flat blank annealing step and the concave blank annealing step, the cooling method of annealing in the present embodiment is preferably furnace cooling. Although the speed is reduced, the method can not only ensure that the annealing process does not need to be opened to contact with air, thereby preventing oxidation, but also avoid the possible reaction of the metal surface and elements in water in the water cooling process.
The slab blank in this embodiment may be made of various materials, and the first slab blank provided in this embodiment is an oxygen-free copper blank or a copper alloy blank.
In combination with the physical properties of copper, the hardness and the melting point of copper are higher, in order that the target backing plate manufactured by the oxygen-free copper blank or the copper alloy blank has the performance and the advantages, the annealing temperature of the oxygen-free copper blank or the copper alloy blank in the step of annealing the flat blank is preferably 640-690 ℃, the annealing time is 1.8-3.2 h, and the electric conductivity of the copper-free copper blank or the copper alloy blank is 8-16% higher than that of the existing target backing plate made of the same material; in the forging forming step, the forging force of each forging is 5kN to 8kN, and the descending speed of the forging die is 3mm/s to 15mm/s during each forging; the annealing temperature in the concave blank annealing step is 640-690 ℃, the annealing time is 1.8-3.2 h, and compared with the previous step, the hardness of the concave blank is reduced by 33-50%, and the elongation is increased by about 50%.
The following table illustrates the above-described manufacturing process using oxygen-free copper blanks 400mm in diameter and 15mm in thickness and C18000 chromium nickel silicon copper blanks as examples:
according to the oxygen-free copper blank and the C18000 chromium-nickel-silicon-copper blank with the sizes, a finished target backboard with the total thickness of 40mm and the diameter of 368mm can be manufactured by the method in the embodiment, if a traditional material removing processing method is used, a flat blank with the thickness of 42mm and the diameter of 375mm needs to be prepared, and the weight is about 42 kg; however, the slab in this embodiment is only about 17kg, which can save more than half of the material. In the aspect of conductivity, the conductivity of the conventional oxygen-free copper back plate is about 51ms/m to 55ms/m, while the conductivity in the invention can reach more than 59ms/m, and the lifting rate is 7% to 16%; the conductivity of the existing C18000 chrome-nickel-silicon-copper backboard is about 31ms/m to 32ms/m, while the conductivity in the invention can reach more than 34ms/m, and the lifting rate is 5 percent to 10 percent.
The second flat blank provided by the embodiment is an aluminum alloy blank.
The hardness, the melting point and the like of aluminum are lower than those of copper, the annealing temperature of the aluminum alloy blank in the flat blank annealing step is 380-450 ℃, the annealing time is 0.4-0.6 h, and the electrical conductivity of the aluminum alloy blank is about 20% higher than that of the conventional same-material target back plate after the annealing step; in the forging forming step, the forging force of each forging is 3kN to 4kN, and the descending speed of the forging die is 1mm/s to 8mm/s during each forging; the annealing temperature in the concave blank annealing step is 340-370 ℃, the annealing time is 1.5-2.5 h, and compared with the previous step, the hardness of the concave blank is reduced by 25-33%, and the elongation is increased by 33-100%.
The following table illustrates the above-described manufacturing method using a 6061 aluminum alloy blank having a diameter of 400mm and a thickness of 15mm and an aluminum silicide blank as examples:
in the aspect of conductivity, the conductivity of the existing 6061 aluminum alloy back plate and 6061 aluminum alloy back plate is about 20ms/m, while the conductivity in the invention can reach more than 24ms/m, and the lifting rate is about 20%.
The third flat blank provided in this embodiment is a titanium alloy blank (comprising pure titanium), preferably Ta1 titanium. The titanium alloy has the characteristics of high strength, small density, good mechanical property, good toughness and corrosion resistance; the Ta1 titanium is industrial pure titanium, has more impurity content than chemical pure titanium, has slightly higher strength and hardness, retains better plasticity and is suitable for being used as a target backing plate.
The annealing temperature of the titanium alloy blank in the annealing step is 780-820 ℃, preferably 800 ℃, the annealing time is 2-3 h, preferably 2.5h, and the conductivity of the titanium alloy blank after the annealing step can reach 2.45 and is about 5-10% higher than that of the existing target back plate made of the same material; in the forging forming step, the forging force of each forging is 10kN to 15kN, and the descending speed of the forging die in each forging is 3mm/s to 6mm/s, preferably 5 mm; the annealing temperature in the concave blank annealing step is 780-820 ℃, preferably 800 ℃, the annealing time is 2-3 h, preferably 2.5h, and compared with the previous step, the hardness is reduced from 380HV to 340HV by about 11%, and the elongation is increased from 8% to 12% by about 50%.
The fourth slab stock provided in this example is a molybdenum slab. The molybdenum has stable chemical property, high melting point of 2620 ℃ and excellent high-temperature mechanical stability, so the molybdenum is very suitable for the target material back plate.
The annealing temperature of the molybdenum blank in the annealing step is 840-860 ℃, preferably 850 ℃, the annealing time is 3.5-4.5 h, preferably 4h, and the conductivity of the molybdenum blank after the annealing step can reach 18.47 which is 5-10% higher than that of the existing target back plate made of the same material; in the forging forming step, the forging force of each forging is 10kN to 15kN, and the descending speed of the forging die in each forging is 1mm/s to 3mm/s, preferably 2 mm; the annealing temperature in the concave blank annealing step is 840 ℃ to 860 ℃, preferably 850 ℃, the annealing time is 3.5h to 4.5h, preferably 4h, and after the step, compared with the previous step, the hardness is reduced from 420HV to 400HV by about 5%, and the elongation is increased from 3% to 8% and increased by about 167%.
The above embodiments are only preferred embodiments of the present invention, and the protection scope of the present invention is not limited thereby, and any insubstantial changes and substitutions made by those skilled in the art based on the present invention are within the protection scope of the present invention.
Claims (10)
1. A manufacturing method of a target backing plate with a concave surface is characterized by comprising the following steps:
annealing the flat blank: the flat plate blank is a metal flat plate blank, and is annealed in a vacuum environment or an inert gas environment, wherein the annealing temperature is 380-860 ℃, and the annealing time is 0.4-4.1 h, so that an annealed flat plate blank is formed;
forging and molding: forging the annealed flat blank for multiple times by using a forging die with a bulge under the condition of the same annealing temperature as that in the previous step until the annealed flat blank has a concave surface matched with the forging die, and stopping forging to form a concave blank;
annealing the concave blank: and annealing the concave blank in a vacuum environment or an inert gas environment, wherein the annealing temperature is not higher than the annealing temperature in the annealing step of the flat blank, and the annealing time is not lower than the annealing time in the annealing step of the flat blank, so that the target backboard with the concave surface is formed.
2. The method for manufacturing a target backing plate with a concave surface according to claim 1, wherein the forging die comprises an upper die and a lower die, the lower surface of the upper die has a groove, the upper surface of the lower die has a protrusion, and the protrusion is matched with the groove;
in the forging step, the forging the annealed flat blank multiple times using a forging die having a projection specifically includes the steps of:
the lower die is placed on the platform in a mode that the protrusion faces upwards, the annealing flat blank is placed on the upper surface of the protrusion, the upper die is located above the annealing flat blank, and the upper die is beaten by an air hammer for multiple times, so that the upper die forges the annealing flat blank.
3. The method of manufacturing a target backing plate having a concave surface according to claim 1, further comprising a roughness machining step after the concave blank annealing step as follows:
and carrying out roughness processing on the surface of the target back plate with the concave surface to ensure that the roughness of the surface is Ra0.32 mu m to Ra0.61 mu m.
4. The method for manufacturing a target backing plate having a concave surface according to claim 1, wherein in the forging step, a forging force per forging is 3kN to 15kN, and a speed at which the forging die descends per forging is 1mm/s to 15 mm/s.
5. The method of manufacturing a target backing plate having a concavity according to any one of claims 1 to 4, wherein the flat plate blank is an oxygen-free copper blank or a copper alloy blank.
6. The method according to claim 5, wherein the annealing temperature in the step of annealing the plate blank is 640 ℃ to 690 ℃, and the annealing time is 1.8h to 3.2 h; in the forging forming step, the forging force of each forging is 5kN to 8kN, and the descending speed of the forging die is 3mm/s to 15mm/s during each forging; the annealing temperature in the concave blank annealing step is 640-690 ℃, and the annealing time is 1.8-3.2 h.
7. The method of manufacturing a target backing plate having a concave surface according to any one of claims 1 to 4, wherein the flat plate blank is an aluminum alloy blank.
8. The method according to claim 7, wherein the annealing temperature in the annealing step of the plate blank is 380 ℃ to 450 ℃ and the annealing time is 0.4 to 0.6 h; in the forging forming step, the forging force of each forging is 3kN to 4kN, and the descending speed of the forging die is 1mm/s to 8mm/s during each forging; the annealing temperature in the concave blank annealing step is 340-370 ℃, and the annealing time is 1.5-2.5 h.
9. The method of manufacturing a target backing plate having a concave surface according to any one of claims 1 to 4, wherein the flat plate blank is a titanium alloy blank; the annealing temperature in the flat blank annealing step is 780-820 ℃, and the annealing time is 2-3 h; in the forging forming step, the forging force of each forging is 10kN to 15kN, and the descending speed of the forging die is 3mm/s to 6mm/s during each forging; the annealing temperature in the concave blank annealing step is 780-820 ℃, and the annealing time is 2-3 h.
10. The method of manufacturing a target backing plate having a concave surface according to any one of claims 1 to 4, wherein the flat plate blank is a molybdenum blank; the annealing temperature in the flat blank annealing step is 840 ℃ to 860 ℃, and the annealing time is 3.5h to 4.5 h; in the forging forming step, the forging force of each forging is 10kN to 15kN, and the descending speed of the forging die is 1mm/s to 3mm/s during each forging; the annealing temperature in the concave blank annealing step is 840 ℃ to 860 ℃, and the annealing time is 2h to 3 h.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110293451.9A CN113106362B (en) | 2021-03-18 | 2021-03-18 | Manufacturing method of target material back plate with concave surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110293451.9A CN113106362B (en) | 2021-03-18 | 2021-03-18 | Manufacturing method of target material back plate with concave surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113106362A true CN113106362A (en) | 2021-07-13 |
| CN113106362B CN113106362B (en) | 2022-07-01 |
Family
ID=76711762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110293451.9A Active CN113106362B (en) | 2021-03-18 | 2021-03-18 | Manufacturing method of target material back plate with concave surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113106362B (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2935396A1 (en) * | 2008-08-26 | 2010-03-05 | Aubert & Duval Sa | PROCESS FOR THE PREPARATION OF A NICKEL - BASED SUPERALLIATION WORKPIECE AND PIECE THUS OBTAINED |
| KR20110139386A (en) * | 2010-06-23 | 2011-12-29 | 한국생산기술연구원 | Sputtering target ta sheet and manufacturing method of the same |
| CN103215553A (en) * | 2013-04-27 | 2013-07-24 | 西部钛业有限责任公司 | Method for preparing high-purity titanium plate for use as target |
| CN103667768A (en) * | 2013-12-24 | 2014-03-26 | 济源豫金靶材科技有限公司 | Silver target manufacturing method |
| CN105624591A (en) * | 2014-10-31 | 2016-06-01 | 宁波江丰电子材料股份有限公司 | Manufacturing method for aluminum targets |
| CN106734798A (en) * | 2016-11-24 | 2017-05-31 | 郑州大学 | A kind of hot die forming manufacturing process of titanium matter cavity liner |
| CN107022739A (en) * | 2017-05-19 | 2017-08-08 | 包头稀土研究院 | The manufacture method of sputter coating molybdenum rotary target material |
| CN109158515A (en) * | 2018-02-09 | 2019-01-08 | 沈阳中核舰航特材科技（常州）有限公司 | A kind of manufacturing method of titanium alloy TC 4 bone plate and TC4ELI bone plate |
| CN109531083A (en) * | 2018-12-28 | 2019-03-29 | 同共(湖北)精密成形有限公司 | A kind of radiator for semiconductor and its processing method |
| CN110904364A (en) * | 2019-11-19 | 2020-03-24 | 先导薄膜材料（广东）有限公司 | Preparation method of aluminum alloy target material |
-
2021
- 2021-03-18 CN CN202110293451.9A patent/CN113106362B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2935396A1 (en) * | 2008-08-26 | 2010-03-05 | Aubert & Duval Sa | PROCESS FOR THE PREPARATION OF A NICKEL - BASED SUPERALLIATION WORKPIECE AND PIECE THUS OBTAINED |
| KR20110139386A (en) * | 2010-06-23 | 2011-12-29 | 한국생산기술연구원 | Sputtering target ta sheet and manufacturing method of the same |
| CN103215553A (en) * | 2013-04-27 | 2013-07-24 | 西部钛业有限责任公司 | Method for preparing high-purity titanium plate for use as target |
| CN103667768A (en) * | 2013-12-24 | 2014-03-26 | 济源豫金靶材科技有限公司 | Silver target manufacturing method |
| CN105624591A (en) * | 2014-10-31 | 2016-06-01 | 宁波江丰电子材料股份有限公司 | Manufacturing method for aluminum targets |
| CN106734798A (en) * | 2016-11-24 | 2017-05-31 | 郑州大学 | A kind of hot die forming manufacturing process of titanium matter cavity liner |
| CN107022739A (en) * | 2017-05-19 | 2017-08-08 | 包头稀土研究院 | The manufacture method of sputter coating molybdenum rotary target material |
| CN109158515A (en) * | 2018-02-09 | 2019-01-08 | 沈阳中核舰航特材科技（常州）有限公司 | A kind of manufacturing method of titanium alloy TC 4 bone plate and TC4ELI bone plate |
| CN109531083A (en) * | 2018-12-28 | 2019-03-29 | 同共(湖北)精密成形有限公司 | A kind of radiator for semiconductor and its processing method |
| CN110904364A (en) * | 2019-11-19 | 2020-03-24 | 先导薄膜材料（广东）有限公司 | Preparation method of aluminum alloy target material |
Non-Patent Citations (2)
| Title |
|---|
| 侯德政主编: "《机械工程材料及热加工基础》", 31 January 2008, 北京：国防工业出版社 * |
| 国家新材料产业发展专家咨询委员会主编: "《中国新材料产业发展年度报告 2017》", 31 August 2018 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113106362B (en) | 2022-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2636941B2 (en) | Composite aluminum plate, method for producing the same, target for cathode spatter comprising the composite aluminum plate, and method for producing the same | |
| CN102534518B (en) | Backboard fabricating method | |
| JP5685201B2 (en) | Monolithic aluminum alloy target and method of manufacturing the same | |
| US10755738B2 (en) | Aluminum alloy substrate for magnetic discs and manufacturing method therefor, as well as magnetic disc using said aluminum alloy substrate for magnetic discs | |
| WO2005045090A1 (en) | Tantalum sputtering target | |
| US6896748B2 (en) | Ultrafine-grain-copper-base sputter targets | |
| US10006117B2 (en) | Sputtering target-backing plate assembly and method for producing same | |
| TW201139706A (en) | Pure copper plate production method, and pure copper plate | |
| US20160086777A1 (en) | Sputtering target-backing plate assembly | |
| CN111304606A (en) | Preparation method of defect-free high-purity nickel-vanadium target blank and target prepared by using defect-free high-purity nickel-vanadium target blank | |
| CN111989421B (en) | Sputtering target and method for producing same | |
| CN111254398B (en) | Platinum sputtering target with high oriented grain and preparation method thereof | |
| CN113106362B (en) | Manufacturing method of target material back plate with concave surface | |
| KR20190027960A (en) | Titanium target for sputtering | |
| CN114774723A (en) | Battery aluminum foil with high mechanical property and high conductivity and production method thereof | |
| CN104694862B (en) | Preparation method of silver sputtering target blank | |
| CN109881132B (en) | Tissue homogenization control method for thin pure nickel plate | |
| CN112779508A (en) | Preparation method of high-purity vanadium target blank and high-purity vanadium target prepared by using same | |
| CN103700641A (en) | Steel strip for lead frame and production method thereof | |
| CN111441020A (en) | Method for preparing TC4 titanium alloy sputtering target material at low cost | |
| CN111069776B (en) | Method for improving welding strength of pure nickel strip and aluminum strip for electronic industry | |
| CN113293311B (en) | Method for preparing high-purity nickel ingot by vacuum induction cold crucible smelting | |
| JPH11335826A (en) | Production of sputtering target material made of al alloy | |
| CN114000073A (en) | Process method for improving internal structure of high-purity nickel target material | |
| KR20220082122A (en) | Nickel plated heat treated steel sheet having excellent processaibility and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |