CN112864793A - Laser chip airtight packaging structure and packaging method - Google Patents
Laser chip airtight packaging structure and packaging method Download PDFInfo
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- CN112864793A CN112864793A CN202110195856.9A CN202110195856A CN112864793A CN 112864793 A CN112864793 A CN 112864793A CN 202110195856 A CN202110195856 A CN 202110195856A CN 112864793 A CN112864793 A CN 112864793A
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 230000000149 penetrating effect Effects 0.000 claims abstract description 6
- 229910000679 solder Inorganic materials 0.000 claims description 26
- 238000003466 welding Methods 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 16
- 238000001259 photo etching Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 8
- 238000001465 metallisation Methods 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 238000005538 encapsulation Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000005350 fused silica glass Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 230000013011 mating Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses an airtight packaging structure and a packaging method for a laser chip. The laser chip airtight packaging structure comprises a tube seat and a tube cap which are matched with each other, and a laser chip arranged between the tube seat and the tube cap in a packaging mode, wherein the tube cap comprises an integrally formed tube cap body and a lens, a groove structure is arranged on the first surface of the tube seat, a reflecting layer is arranged on the side face of the groove structure, the reflecting layer can enable light emitted by the laser chip to be reflected to the lens, a through hole penetrating through the first surface and the second surface of the tube seat is further formed in the tube seat, a conductive metal piece matched with the shape of the through hole is filled in the through hole, and the laser chip is electrically connected with the outside of the tube cap through the conductive metal piece. The laser chip air tightness packaging structure provided by the invention has the advantages that the volume is greatly reduced; meanwhile, the packaging method can enable the laser chip to be horizontally mounted, and greatly reduces the process difficulty.
Description
Technical Field
The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to an airtight packaging structure and a packaging method for a laser chip.
Background
At present, laser chips which are used in a large amount in the industrial fields of optical communication, optical sensing and the like use metal tube shell packages such as TO-46, TO-5 and the like in a large amount. Such packages typically consist of a metal stem, a metal cap and a lens/window sintered onto the cap. The receiving/detecting chip is firstly mounted on the tube seat, and then the positive electrode and the negative electrode are led out in a metal lead mode. And then, welding the metal pipe cap and the pipe seat by energy storage welding to form the airtight package. For the packaging mode, because the laser generally emits light from the end face, an end face perpendicular to the bottom face needs to be added on the tube seat, the laser needs to be attached to the perpendicular end face and then leads are led, and the process is difficult to realize. In addition, the volume is large and the precision is not high due to the limitation of mechanical processing conditions. Before soldering, the two parts need to be aligned and coupled, and the packaging efficiency is low. In addition, since the glass lens is fixed to the cap by sintering, the accuracy is not high and the coupling efficiency is poor. In addition, the glass lens has a large focal length, so that the volume after packaging cannot be further reduced.
Disclosure of Invention
The present invention provides an airtight package structure and a method for a laser chip to overcome the disadvantages of the prior art.
In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:
the embodiment of the invention provides an airtight packaging structure of a laser chip, which comprises a tube seat, a tube cap and the laser chip, wherein the tube seat and the tube cap are matched with each other, the laser chip is packaged and arranged between the tube seat and the tube cap, the tube cap comprises a tube cap body and a lens which are integrally formed, a groove structure is arranged on the first surface of the tube seat, a reflecting layer is arranged on the side surface of the groove structure, light emitted by the laser chip can be reflected to the lens by the reflecting layer, a through hole penetrating through the first surface and the second surface of the tube seat is further arranged on the tube seat, a conductive metal piece matched with the through hole in shape is filled in the through hole, the laser chip is electrically connected with the outside of the tube cap through the conductive metal piece, and the first surface and the second surface are arranged oppositely.
Furthermore, the groove structure is integrally formed on the first surface of the tube seat, the side face and the bottom face of the groove structure form an angle of 45 degrees, and the groove structure is at least used for accommodating a laser chip.
Furthermore, the laser chip airtight packaging structure comprises a tube seat wafer and a tube cap wafer, wherein the tube seat wafer is composed of more than two tube seats which are integrally arranged, the tube cap wafer is composed of more than two tube caps which are integrally arranged, the tube cap wafer and the tube seat wafer are welded and fixed, each tube seat, one matched tube cap and at least one laser chip packaged between the tube seat and the tube cap form a packaging unit, and each packaging unit can be divided into mutually independent devices.
The embodiment of the invention also provides a packaging method of the laser chip airtight packaging structure, which comprises the following steps:
providing a tube seat and a tube cap, wherein the tube cap comprises a tube cap body and a lens which are integrally formed, a groove structure is arranged on the first surface of the tube seat, a reflecting layer is arranged on the side surface of the groove structure, a through hole penetrating through the first surface and the second surface of the tube seat is arranged on the tube seat, and a conductive metal piece matched with the through hole in shape is filled in the through hole;
installing a laser chip in a groove structure of the tube seat, wherein the laser chip is electrically connected with the outside of the tube cap through the conductive metal piece and is arranged corresponding to the lens;
and aligning and welding the matched tube seat and the tube cap to package the laser chip between the tube seat and the tube cap, wherein light emitted by the laser chip can be reflected to the lens through the reflecting layer of the groove structure.
Compared with the prior art, the invention has the beneficial effects that: according to the laser chip air tightness packaging structure provided by the invention, the size of a packaged device can be greatly reduced, the integrated micro lens has high precision, good performance and accurate alignment, and the system performance can be effectively improved; meanwhile, the packaging method can enable the laser chip to be horizontally mounted, and greatly reduces the process difficulty.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a laser chip hermetic package structure in embodiment 1 of the present invention;
FIG. 2 is a schematic view showing a process for manufacturing a socket in example 1 of the present invention;
FIG. 3 is a schematic view of a process for forming a cap according to embodiment 1 of the present invention;
fig. 4 is a schematic structural diagram of a laser chip hermetic package structure in embodiment 2 of the present invention.
Description of reference numerals: 1-tube seat, 2-tube cap, 3-laser chip, 4-lead, 11-groove structure, 12-conductive pattern, 13-conductive metal piece, 14-reflection layer, 21-lens, 131-leading-out electrode area, 132-leading-out electrode area, 100-tube seat wafer and 200-tube cap wafer.
Detailed Description
In view of the deficiencies in the prior art, the inventors of the present invention have made extensive studies and extensive practices to provide technical solutions of the present invention. The technical solution, its implementation and principles, etc. will be further explained as follows.
One aspect of the embodiment of the invention provides a laser chip airtight packaging structure, which comprises a tube seat and a tube cap which are matched with each other, and a laser chip packaged and arranged between the tube seat and the tube cap, wherein the tube cap comprises a tube cap body and a lens which are integrally formed, a groove structure is arranged on a first surface of the tube seat, a reflecting layer is arranged on the side surface of the groove structure, the reflecting layer can enable light emitted by the laser chip to be reflected to the lens, a through hole penetrating through the first surface and a second surface of the tube seat is further arranged on the tube seat, a conductive metal part matched with the through hole in shape is filled in the through hole, the laser chip is electrically connected with the outside of the tube cap through the conductive metal part, and the first surface and the second surface are arranged oppositely.
Furthermore, the groove structure is integrally formed on the first surface of the tube seat, the side surface and the bottom surface of the groove structure form an angle of 45 degrees, and the groove structure is at least used for accommodating a laser chip.
Furthermore, a conductive pattern is arranged in the groove structure, an electrode of the laser chip is electrically connected with the conductive pattern through a lead, and the conductive pattern is electrically connected with the conductive metal piece in the through hole through the lead.
In some specific embodiments, the lens is integrally formed on a side of the cap body away from the tube seat.
In some more specific embodiments, the electrodes of the laser chip are electrically connected to the conductive metal member in the through holes by leads.
In some more specific embodiments, the socket and the cap are bonded to each other by at least any one of direct bond welding, solder preform welding, and glass solder welding.
In some more specific embodiments, the material of the socket includes, but is not limited to, a silicon-on-insulator.
Further, the material of the reflective layer includes Al and/or Au, and is not limited thereto.
Further, the material of the cap includes any one of silicon, glass, and fused silica, but is not limited thereto.
In some specific embodiments, the laser chip hermetic package structure includes a tube seat wafer composed of two or more tube seats integrally arranged, and a tube cap wafer composed of two or more tube caps integrally arranged, the tube cap wafer and the tube seat wafer are welded and fixed, wherein each tube seat, a matched tube cap and at least one laser chip packaged between the tube seat and the tube cap form a package unit, and each package unit can be divided to form devices independent of each other.
Another aspect of the embodiments of the present invention further provides a packaging method of a laser chip hermetic package structure, including:
providing a tube seat and a tube cap, wherein the tube cap comprises a tube cap body and a lens which are integrally formed, a groove structure is arranged on the first surface of the tube seat, a reflecting layer is arranged on the side surface of the groove structure, a through hole penetrating through the first surface and the second surface of the tube seat is arranged on the tube seat, and a conductive metal piece matched with the through hole in shape is filled in the through hole;
installing a laser chip in a groove structure of the tube seat, wherein the laser chip is electrically connected with the outside of the tube cap through the conductive metal piece and is arranged corresponding to the lens;
and aligning and welding the matched tube seat and the tube cap to package the laser chip between the tube seat and the tube cap, wherein light emitted by the laser chip can be reflected to the lens through the reflecting layer of the groove structure.
In some more specific embodiments, the encapsulation method includes: and photoetching and/or wet etching are/is adopted to integrally form the groove structure on the first surface of the tube seat, and the side surface and the bottom surface of the groove structure form an angle of 45 degrees.
Further, the lens is integrally formed on one side, away from the tube seat, of the tube cap body by adopting a photoetching-backflow-etching process.
Further, a metal deposition method is adopted to deposit and form a conductive pattern in the groove structure, and then a lead is used to electrically connect the electrode of the laser chip with the conductive pattern.
Further, a metal deposition method is adopted to deposit and form a reflecting layer on the side surface of the groove structure.
Further, through holes are formed on the tube seat in a through hole etching and through hole filling mode, a conductive metal piece matched with the through holes in shape is filled, and then the conductive patterns are electrically connected with the conductive metal piece through leads.
In some more specific embodiments, the encapsulation method includes: and aligning the matched pipe cap and the pipe seat in a passive alignment and/or an active alignment mode, and then combining the pipe cap and the pipe seat by at least any one mode of direct bonding welding, solder pre-sheet welding and glass solder welding.
Further, depositing a solder layer at the position of the tube seat corresponding to the tube cap by adopting a photoetching/metal layer deposition/stripping and/or metal layer deposition/photoetching/etching method; preferably, the material of the solder layer includes one or a combination of two or more of Cr, Ni, Ti, Al, Au, and Sn.
In some more specific embodiments, the encapsulation method further comprises:
providing a tube seat wafer consisting of more than two tube seats arranged integrally and a tube cap wafer consisting of more than two tube caps arranged integrally;
fixing more than two laser chips on the tube seat wafer, welding and fixing the tube cap wafer and the tube seat wafer, and enabling each tube seat, one matched tube cap and at least one laser chip packaged between the tube seat and the tube cap to form a packaging unit;
and dividing each packaging unit into independent devices.
The technical solutions of the present invention are further described in detail below with reference to several preferred embodiments and the accompanying drawings, which are implemented on the premise of the technical solutions of the present invention, and a detailed implementation manner and a specific operation process are provided, but the scope of the present invention is not limited to the following embodiments.
The experimental materials used in the examples used below were all available from conventional biochemical reagents companies, unless otherwise specified.
Example 1
Referring to fig. 1, an airtight package structure for a laser chip includes a tube seat 1 and a tube cap 2 that are matched with each other, and a laser chip 3 that is packaged and disposed between the tube seat 1 and the tube cap 2, where the tube cap 2 includes a tube cap body and a lens 21 that are integrally formed, a groove structure 11 is disposed on a first surface of the tube seat, a reflection layer 14 is disposed on a side surface of the groove structure 11, the reflection layer 14 can reflect light emitted by the laser chip 3 to the lens 21, a through hole that penetrates through the first surface and a second surface of the tube seat is further disposed on the tube seat 1, a conductive metal piece 13 that is matched with the through hole in shape is filled in the through hole, the laser chip 3 is electrically connected with the outside of the tube cap 2 through the conductive metal piece 13, and the first surface and the second surface are disposed opposite to each other. The electrodes of the laser chip 3 are connected with the conductive pattern 12 through leads 4, the lead-out electrode area 131 of the conductive metal piece 13 is connected with the conductive pattern 12 or directly connected with the leads 4, the lead-out electrode area 132 of the conductive metal piece 13 is arranged on the outer side of the tube cap 2, and the contact surface/line between the tube cap 2 and the corresponding tube seat 1 is welded and sealed.
Specifically, the packaging method of the laser chip airtight packaging structure comprises the following steps:
referring to fig. 2, the specific steps of the tube seat processing include:
(1) selecting an insulated silicon wafer as a tube seat material, corroding a groove structure 11 in the center of the tube seat by using a photoetching or wet corrosion method, and enabling the side surface of the groove structure to form an angle of 45 degrees with the bottom surface of the groove structure by selecting a silicon wafer with a proper crystal orientation and controlling the crystal orientation direction of a photoetching pattern;
(2) using photoetching and metal deposition methods, depositing metal on the 45-degree side to form the reflecting layer 14, wherein the metal can be Al, Au or the like;
(3) carrying out pattern metallization on the bottom surface of the groove structure 11, manufacturing a front electrode lead-out pattern, generally forming a photoresist pattern by using a semiconductor photoetching method, depositing a metal layer by using processing methods such as electron beam evaporation and thermal evaporation, and finally stripping the photoresist to form a metal patterned metal layer, namely a conductive pattern 12, wherein the metal layer can be made of any one or more than two metals of Cr, Ni, Ti, Al and Au, and the layer is simultaneously used for preparing an alignment mark for patch alignment;
(4) etching a through hole on the bottom surface of the groove structure 11 by using photoetching (dry etching or wet etching), filling the through hole by using a metal deposition method, leading out an electrode to the other side of the tube seat, and forming a conductive metal piece 13 and leading-out electrode areas (can be understood as pad areas) 131 and 132 at two ends of the conductive metal piece 13;
(5) depositing a solder layer by using a photoetching/metal layer deposition/stripping method or a metal layer deposition/photoetching/etching method; the material of the solder layer comprises one or the combination of more than two of Cr, Ni, Ti, Al, Au and Sn, or the combination of common low-temperature solder metals is adopted as the solder layer, or the solder layer is not required to be formed; this layer simultaneously prepares the alignment marks for solder alignment.
Referring to fig. 3, the specific steps of processing the tube cap include: :
(6) selecting materials with good refractive index and light transmittance (such as a silicon wafer, a fused quartz plate and the like) as tube cap materials, and manufacturing a micro lens (namely a lens 21) on one surface (such as a first surface) of the tube cap materials by adopting a photoetching-refluxing-etching method, wherein the micro lens can be a ball lens or a non-ball lens;
(7) depositing a solder layer by adopting a photoetching/metal layer deposition/stripping method or a metal layer deposition/photoetching/etching method, wherein the solder layer can be made of any one or a combination of more than two of Cr, Ni, Ti, Al, Au and Sn; or the material of the solder layer can also adopt the combination of common low-temperature solder metals, or does not need solder; the micro lens, the solder layer and the inner concave cavity are designed to be aligned with the chip on the tube seat; meanwhile, an alignment mark for alignment can be processed on the tube seat;
the specific steps of the patch and the lead wire comprise:
a chip mounter is used for aligning the laser chip 3 with the alignment mark and then mounting the laser chip on the bottom of the groove structure 11, the light emitting direction of the laser is aligned with the 45-degree reflecting layer 14 of the groove structure 11, a lead 4 is provided by a lead machine to electrically connect one end of the lead with the chip (namely the laser chip 3), and the other end of the lead is electrically connected with the conductive pattern 12; and a wire-drawing machine is used to draw a wire onto an inner pad (pad).
The welding method comprises the following specific steps:
9) after the tube cap and the tube seat are aligned by using a bonding device, the tube cap and the tube seat are fixedly connected to package the laser chip (packaged in a package cavity formed by the tube seat and the inner concave cavity of the tube cap, as shown in fig. 1.
It should be noted that the tube cap and the tube seat can be fixedly connected by direct bonding or welding; the soldering may be performed using solder preform sheets, glass solder, or the like; the welding can be carried out in vacuum or in an atmosphere filled with protective gas; the bonding may be performed using device-to-device, device-to-wafer, or wafer-to-wafer.
Example 2
Referring to fig. 1 and 4, a laser chip hermetic package structure includes a tube seat wafer 100 composed of two or more tube seats integrally disposed, and a tube cap wafer 200 composed of two or more tube caps integrally disposed, the tube cap wafer 200 and the tube seat wafer 100 are welded and fixed, wherein each tube seat 1, a tube cap 2 matched with each other, and at least one laser chip 3 packaged between the tube seat 1 and the tube cap 2 form a package unit, and each package unit can be divided into devices independent of each other.
Specifically, the packaging method of the laser chip airtight packaging structure may include the following steps:
the steps of the method for packaging the laser chip hermetic package structure in this embodiment are substantially the same as those of steps (1) to (9) of embodiment 1, and the method for packaging the laser chip hermetic package structure in this embodiment further includes step (10):
(10) cutting:
referring again to fig. 4, after the die header wafer 100 and the cap wafer 200 are bonded, dicing is required to cut the die header wafer into individual devices.
It should be noted that if the welding mode is a device-device mode, cutting is not needed; if the bonding method is a device-wafer method, the socket wafer needs to be cut to form individual devices.
The volume of a device packaged by the integrated lens and the air-tight packaging method of the photoelectronic chip provided by the embodiment of the invention can be greatly reduced, coupling is not needed during welding, the cost can be effectively reduced, and the efficiency is improved; the integrated micro lens has high precision, good performance and accurate alignment, and can effectively improve the system performance.
It should be understood that the above-mentioned embodiments are merely illustrative of the technical concepts and features of the present invention, which are intended to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and therefore, the protection scope of the present invention is not limited thereby. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (10)
1. The utility model provides an airtight packaging structure of laser chip, its characterized in that includes matched with tube socket and pipe cap to and the encapsulation set up in laser chip between tube socket and the pipe cap, the pipe cap includes integrated into one piece's pipe cap body and lens, the first surface of tube socket is provided with groove structure, groove structure's side is provided with the reflector layer, the reflector layer can make the light reflection that laser chip sent extremely lens, still be provided with on the tube socket and run through the through-hole on tube socket first surface and the second surface, and the through-hole intussuseption be provided with the electrically conductive metalwork that the through-hole shape matches, laser chip passes through electrically conductive metalwork with the outside electricity of pipe cap is connected, first surface sets up back to back with the second surface.
2. The hermetic package structure of laser chip according to claim 1, wherein: the groove structure is integrally formed on the first surface of the tube seat, the side face and the bottom face of the groove structure form an angle of 45 degrees, and the groove structure is at least used for accommodating a laser chip.
3. The hermetic package structure for laser chips according to claim 2, wherein: and a conductive pattern is arranged in the groove structure, an electrode of the laser chip is electrically connected with the conductive pattern through a lead, and the conductive pattern is electrically connected with the conductive metal piece in the through hole through the lead.
4. The hermetic package structure of laser chip according to claim 1, wherein: the lens is integrally formed on one side, away from the tube seat, of the tube cap body;
and/or the electrode of the laser chip is electrically connected with the conductive metal piece in the through hole through a lead;
and/or the tube seat and the tube cap are mutually combined at least by any one mode of direct bonding welding, solder preform welding and glass solder welding.
5. The hermetic package structure of laser chip according to claim 1, wherein: the material of the reflecting layer comprises Al and/or Au;
and/or the tube seat is made of an insulating silicon wafer;
and/or the material of the tube cap comprises any one of silicon, glass and fused quartz.
6. A laser chip hermetic package structure according to any one of claims 1-5, comprising a header wafer composed of two or more headers integrally disposed, and a cap wafer composed of two or more caps integrally disposed, the cap wafer being welded to the header wafer, wherein each header, a mating one of the caps and at least one laser chip packaged between the header and the cap form a package unit, and the package units can be divided to form devices independent of each other.
7. A packaging method of a laser chip airtight packaging structure is characterized by comprising the following steps:
providing a tube seat and a tube cap, wherein the tube cap comprises a tube cap body and a lens which are integrally formed, a groove structure is arranged on the first surface of the tube seat, a reflecting layer is arranged on the side surface of the groove structure, a through hole penetrating through the first surface and the second surface of the tube seat is arranged on the tube seat, and a conductive metal piece matched with the through hole in shape is filled in the through hole;
installing a laser chip in a groove structure of the tube seat, wherein the laser chip is electrically connected with the outside of the tube cap through the conductive metal piece and is arranged corresponding to the lens;
and aligning and welding the matched tube seat and the tube cap to package the laser chip between the tube seat and the tube cap, wherein light emitted by the laser chip can be reflected to the lens through the reflecting layer of the groove structure.
8. The method of packaging according to claim 7, comprising: the groove structure is integrally formed on the first surface of the tube seat by adopting photoetching and/or wet etching, and the side surface and the bottom surface of the groove structure form an angle of 45 degrees;
and/or the lens is integrally formed on one side of the tube cap body, which is far away from the tube seat, by adopting a photoetching-refluxing-etching process;
and/or depositing a conductive pattern in the groove structure by adopting a metal deposition method, and electrically connecting the electrode of the laser chip with the conductive pattern by using a lead;
and/or, depositing a reflecting layer on the side surface of the groove structure by adopting a metal deposition method;
and/or forming a through hole on the tube seat by adopting through hole etching and through hole filling modes, filling a conductive metal piece matched with the through hole in shape, and then realizing the electric connection of the conductive pattern and the conductive metal piece through a lead.
9. The method of packaging according to claim 8, comprising:
aligning the matched pipe cap and pipe seat by adopting a passive alignment and/or an active alignment mode, and then combining the pipe cap and the pipe seat by at least any one mode of direct bonding welding, solder preform welding and glass solder welding;
and/or, depositing a solder layer at the position of the tube seat corresponding to the tube cap by adopting a photoetching/metal layer deposition/stripping and/or metal layer deposition/photoetching/etching method; preferably, the material of the solder layer includes one or a combination of two or more of Cr, Ni, Ti, Al, Au, and Sn.
10. The method of packaging of claim 7, further comprising:
providing a tube seat wafer consisting of more than two tube seats arranged integrally and a tube cap wafer consisting of more than two tube caps arranged integrally;
fixing more than two laser chips on the tube seat wafer, welding and fixing the tube cap wafer and the tube seat wafer, and enabling each tube seat, one matched tube cap and at least one laser chip packaged between the tube seat and the tube cap to form a packaging unit;
and dividing each packaging unit into independent devices.
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| CN202110195856.9A CN112864793A (en) | 2021-02-19 | 2021-02-19 | Laser chip airtight packaging structure and packaging method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114300932A (en) * | 2021-12-01 | 2022-04-08 | 上海炬佑智能科技有限公司 | Chip packaging structure, forming method and electronic equipment |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20080073662A1 (en) * | 2006-09-21 | 2008-03-27 | Bily Wang | Method of manufacturing high power light-emitting device package and structure thereof |
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| CN102583218A (en) * | 2012-03-06 | 2012-07-18 | 华中科技大学 | Silicon-based airtight packaging casing |
| CN106410601A (en) * | 2016-06-14 | 2017-02-15 | 武汉宜鹏光电科技有限公司 | TO Can LD device without backlight monitoring and preparation technology thereof |
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| CN114300932A (en) * | 2021-12-01 | 2022-04-08 | 上海炬佑智能科技有限公司 | Chip packaging structure, forming method and electronic equipment |
| CN114300932B (en) * | 2021-12-01 | 2024-04-26 | 上海炬佑智能科技有限公司 | Chip packaging structure, forming method and electronic equipment |
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