CN209087854U - Opto chip encapsulating structure - Google Patents
Opto chip encapsulating structure Download PDFInfo
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- CN209087854U CN209087854U CN201822056684.3U CN201822056684U CN209087854U CN 209087854 U CN209087854 U CN 209087854U CN 201822056684 U CN201822056684 U CN 201822056684U CN 209087854 U CN209087854 U CN 209087854U
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- pipe cap
- opto chip
- tube socket
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Abstract
The utility model discloses a kind of opto chip encapsulating structures.The opto chip encapsulating structure includes tube socket, pipe cap and the opto chip being packaged between the tube socket and pipe cap matched, the opto chip passes through lead and pipe cap external electrical connections, stating pipe cap includes integrally formed pipe cap ontology and lens, and the lens are correspondingly arranged with opto chip.Base can be greatly reduced by the device volume after integral lens and level Hermetic Package the method encapsulation of opto chip provided by the embodiment of the utility model, and when welding, which may not need, to be coupled, and cost can be effectively reduced, improve efficiency；Integrated micro lens precision is high, performance is good, alignment is accurate, can effectively improve system performance.
Description
Technical field
In particular to a kind of opto chip encapsulating structure of the utility model, belongs to technical field of manufacturing semiconductors.
Background technique
Reception/the sensitive detection parts largely used in industrial circles such as optic communication, light sensings at present generally use Can
Encapsulation, such as TO-46, TO-5 etc..This encapsulation is generally by metal tube socket, the lens/window of metal pipe cap and sintering on pipe cap
Mouth three parts composition.Reception/detection chip is mounted on tube socket first, is then drawn positive and negative anodes by way of metal lead wire
Out.Metal pipe cap is carried out stored energy welding with tube socket again later to weld, forms air-tight packaging.This packaged type, by
Machine-sensible conditions limitation, causes volume larger, precision is not high.Before welding, it needs to carry out the two alignment coupling, encapsulates
Efficiency is lower.Further, since glass lens is fixed on pipe cap using the mode of sintering, therefore precision is not high, coupling efficiency compared with
Difference.In addition, the focal length of glass lens is larger, so that the volume after encapsulation can not also further reduce.
Utility model content
In view of the deficiencies of the prior art, the main purpose of the utility model is to provide a kind of opto chip encapsulating structures
And packaging method, this method pass through the method to metallize on an insulating substrate and make tube socket and draw chip pin, make
With semiconductor technology make, be integrated with inner cavity and the pipe cap of micro lens, by the two by Direct Bonding, solder weld etc.
Air-tight packaging structure is formed after means connection.
For the aforementioned purpose of utility model of realization, the technical solution adopted in the utility model includes:
The utility model embodiment provides a kind of opto chip encapsulating structure, including tube socket, pipe cap and packed
Opto chip between the tube socket and pipe cap matched, the opto chip pass through lead and pipe cap external electrical connections,
The pipe cap includes integrally formed pipe cap ontology and lens, and the lens are correspondingly arranged with opto chip.
In some more specific embodiments, integrally formed with described on the first surface of the pipe cap ontology
Mirror is formed with inner cavity on the second surface of the pipe cap ontology, and the inner cavity is at least used to accommodate a photoelectron core
Piece, the first surface and the opposite facing setting of second surface.
In some more specific embodiments, the tube socket includes insulating substrate.
In some more specific embodiments, the material of the pipe cap is selected from silicon wafer or vitreous silica piece, but not under
In this.
In some more specific embodiments, the opto chip includes detector chip, chip of laser, puts
Big device chip or driving chip, but not limited to this.
In some more specific embodiments, the pipe cap is welded and fixed with corresponding tube socket.
In some more specific embodiments, conductive layer and passivation layer, institute are disposed in the insulating substrate
Stating conductive layer includes more than one conductive pattern, and the extraction electrode region of each conductive pattern is exposed from passivation layer, each
The electrode of opto chip is electrically connected by lead with an at least extraction electrode region for a corresponding conductive pattern, and each
A conductive pattern also at least extraction electrode region is arranged outside a corresponding pipe cap.
In some more specific embodiments, the material of the passivation layer is selected from SiO2, SiNx, polyimides, benzene
And cyclobutane, wherein x is greater than 0, but not limited to this.
In some more specific embodiments, the insulating substrate is selected from silicon wafer, potsherd, but not limited to this.
In some more specific embodiments, the opto chip encapsulating structure include by be wholely set two
The tube socket wafer of a above tube socket composition, the pipe cap wafer being made of the more than two pipe caps being wholely set, the pipe cap wafer
It is welded and fixed with tube socket wafer, wherein each tube socket and the pipe cap matched and being packaged between the tube socket and pipe cap
An at least opto chip form an encapsulation unit, each encapsulation unit can be divided to form device independent of each other.
The utility model embodiment additionally provides a kind of production method of opto chip encapsulating structure comprising:
There is provided tube socket and pipe cap, the pipe cap includes integrally formed pipe cap ontology and lens, the lens and photoelectron
Chip is correspondingly arranged；
Opto chip is mounted on tube socket, opto chip passes through lead and pipe cap external electrical connections；
By the tube socket matched and pipe cap alignment welding, the opto chip is packaged between tube socket and pipe cap.
In some more specific embodiments, the production method further include: in the first table of the pipe cap ontology
It is wholely set the lens on face, and is integrally formed inner cavity on the second surface of the pipe cap ontology, the inner cavity is extremely
It is few to be used to accommodate an opto chip, the first surface and the opposite facing setting of second surface.
In some more specific embodiments, the production method includes:
Conductive layer is set on the insulating surface of tube socket, and the conductive layer includes more than one conductive pattern；
Passivation layer is set on the conductive layer, and makes the exposure from passivation layer of the extraction electrode region of each conductive pattern
Out；
More than one opto chip is fixed on the passivation layer, and the electrode of each opto chip is passed through into lead
It is electrically connected with an at least extraction electrode region for a corresponding conductive pattern, then each tube socket is welded with a corresponding pipe cap
It is fixed, and each conductive pattern also at least extraction electrode region is set outside a corresponding pipe cap.
In some more specific embodiments, the production method further include:
The tube socket wafer being made of the more than two tube sockets being wholely set, more than two pipe cap groups by being wholely set are provided
At pipe cap wafer；
The fixed two or more opto chip on the tube socket wafer, and the pipe cap wafer and tube socket wafer are welded
It is fixed, and make wherein each tube socket and the pipe cap matched and at least light being packaged between the tube socket and pipe cap
Electronic chip forms an encapsulation unit；
Each encapsulation unit is divided to form device independent of each other.
Compared with prior art, integral lens and hermetic seal of the base by opto chip provided by the embodiment of the utility model
Device volume after the encapsulation of dress method can greatly reduce, and when welding, which may not need, to be coupled, and cost can be effectively reduced, mention
High efficiency；Integrated micro lens precision is high, performance is good, alignment is accurate, can effectively improve system performance.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of opto chip encapsulating structure in the utility model embodiment 1；
Fig. 2 is the flowage structure schematic diagram that production forms tube socket in the utility model embodiment 1；
Fig. 3 is the flowage structure schematic diagram that production forms pipe cap in the utility model embodiment 1；
Fig. 4 is a kind of structural schematic diagram of opto chip encapsulating structure in the utility model embodiment 2.
Specific embodiment
In view of deficiency in the prior art, inventor is studied for a long period of time and is largely practiced, and is able to propose that this is practical new
The technical solution of type.The technical solution, its implementation process and principle etc. will be further explained as follows.
The utility model embodiment provides a kind of opto chip encapsulating structure, including tube socket, pipe cap and packed
Opto chip between the tube socket and pipe cap matched, the opto chip pass through lead and pipe cap external electrical connections,
The pipe cap includes integrally formed pipe cap ontology and lens, and the lens are correspondingly arranged with opto chip.
In some more specific embodiments, integrally formed with described on the first surface of the pipe cap ontology
Mirror is formed with inner cavity on the second surface of the pipe cap ontology, and the inner cavity is at least used to accommodate a photoelectron core
Piece, the first surface and the opposite facing setting of second surface.
In some more specific embodiments, the tube socket includes insulating substrate.
In some more specific embodiments, the material of the pipe cap is selected from silicon wafer or vitreous silica piece, but not under
In this.
In some more specific embodiments, the opto chip includes detector chip, chip of laser, puts
Big device chip or driving chip, but not limited to this.
In some more specific embodiments, the pipe cap is welded and fixed with corresponding tube socket.
In some more specific embodiments, conductive layer and passivation layer, institute are disposed in the insulating substrate
Stating conductive layer includes more than one conductive pattern, and the extraction electrode region of each conductive pattern is exposed from passivation layer, each
The electrode of opto chip is electrically connected by lead with an at least extraction electrode region for a corresponding conductive pattern, and each
A conductive pattern also at least extraction electrode region is arranged outside a corresponding pipe cap.
In some more specific embodiments, the material of the passivation layer is selected from SiO2, SiNx, polyimides, benzene
And cyclobutane, wherein x is greater than 0, but not limited to this.
In some more specific embodiments, the insulating substrate is selected from silicon wafer, potsherd, but not limited to this.
In some more specific embodiments, the opto chip encapsulating structure include by be wholely set two
The tube socket wafer of a above tube socket composition, the pipe cap wafer being made of the more than two pipe caps being wholely set, the pipe cap wafer
It is welded and fixed with tube socket wafer, wherein each tube socket and the pipe cap matched and being packaged between the tube socket and pipe cap
An at least opto chip form an encapsulation unit, each encapsulation unit can be divided to form device independent of each other.
The utility model embodiment additionally provides a kind of production method of opto chip encapsulating structure comprising:
There is provided tube socket and pipe cap, the pipe cap includes integrally formed pipe cap ontology and lens, the lens and photoelectron
Chip is correspondingly arranged；
Opto chip is mounted on tube socket, opto chip passes through lead and pipe cap external electrical connections；
By the tube socket matched and pipe cap alignment welding, the opto chip is packaged between tube socket and pipe cap.
In some more specific embodiments, the production method further include: in the first table of the pipe cap ontology
It is wholely set the lens on face, and is integrally formed inner cavity on the second surface of the pipe cap ontology, the inner cavity is extremely
It is few to be used to accommodate an opto chip, the first surface and the opposite facing setting of second surface.
In some more specific embodiments, the production method includes:
Conductive layer is set on the insulating surface of tube socket, and the conductive layer includes more than one conductive pattern；
Passivation layer is set on the conductive layer, and makes the exposure from passivation layer of the extraction electrode region of each conductive pattern
Out；
More than one opto chip is fixed on the passivation layer, and the electrode of each opto chip is passed through into lead
It is electrically connected with an at least extraction electrode region for a corresponding conductive pattern, then each tube socket is welded with a corresponding pipe cap
It is fixed, and each conductive pattern also at least extraction electrode region is set outside a corresponding pipe cap.
In some more specific embodiments, the production method further include:
The tube socket wafer being made of the more than two tube sockets being wholely set, more than two pipe cap groups by being wholely set are provided
At pipe cap wafer；
The fixed two or more opto chip on the tube socket wafer, and the pipe cap wafer and tube socket wafer are welded
It is fixed, and make wherein each tube socket and the pipe cap matched and at least light being packaged between the tube socket and pipe cap
Electronic chip forms an encapsulation unit；
Each encapsulation unit is divided to form device independent of each other.
It as follows will be further to works such as the technical solution, its implementation process and principles in conjunction with attached drawing and specific embodiment
It illustrates.
Embodiment 1
Referring to Fig. 1, a kind of opto chip encapsulating structure, including tube socket 1, pipe cap 2 and it is packaged in tube socket and pipe
Opto chip 3 between cap；First surface and second surface of the pipe cap ontology with opposite facing setting, the first of pipe cap ontology
Integrally formed with lens 21 on surface, it is formed with inner cavity 22 on the second surface of pipe cap ontology, inner cavity 22 is at least used
In accommodating an opto chip 3, lens 21 are correspondingly arranged with opto chip；Tube socket 1 includes insulating substrate 11, is successively set on
Conductive layer and passivation layer 13 in insulating substrate 11, conductive layer include more than one conductive pattern 12, and each conductive pattern draws
Electrode zone 121,122 is exposed from the process window of passivation layer 13 out, the electrode of each opto chip 3 by lead 14 with
An at least extraction electrode region 121 for a corresponding conductive pattern 12 is electrically connected, and each conductive pattern 12 also at least one
Extraction electrode region 122 is arranged outside a corresponding pipe cap 2, i.e. the inside that is located at pipe cap 2 of electrode lead-out area 121, electric
Pole lead-out area 122 is located at the outside of pipe cap 2, and pipe cap 2 is fixedly connected on passivation layer 13, and pipe cap 2 and passivation layer 13 connect
Welded seal between contacting surface/line.Alternatively, can also be arranged on tube socket 1 for holding in some more specific embodiments
The inner cavity or like configurations of opto chip 3 are set, the second surface of pipe cap can be plane.
Specifically, packaging method (integral lens of opto chip and the hermetic seal of a kind of opto chip encapsulating structure
Dress method), it may include steps of:
Referring to Fig. 2, tube socket is processed:
1) make insulating substrate 11 the step of, select such as silicon wafer, potsherd as tube socket substrate (i.e. insulating substrate, under
Material together) can deposit a layer insulating if the insulated with material characteristic is not good enough on it；Common approach includes using PECVD
The method of (vapour deposition process of plasma enhanced chemical) is in tube socket deposition on substrate SiO2, SiNx material or one layer of spin coating
PI (polyimides) the dielectrics such as BCB (benzocyclobutene) and hot setting；
2) more than one conductive pattern 12 is formed on tube socket substrate 11, and the method for semiconductor lithography generally can be used in pipe
Photoetching agent pattern is formed on seat substrate, and using the processing methods such as electron beam evaporation, thermal evaporation in tube socket deposition on substrate metal
Layer, is finally peeled away photoresist and forms patterned metal layer, i.e. conductive pattern 12；The material of metal layer can be Cr, Ni, Ti,
Any one in Al, Au or two or more metal compositions；It can also be processed on tube socket simultaneously for alignment to fiducial mark
Note；
3) one layer of SiO is deposited on conductive pattern 12 using the method for PECVD2, SiNx etc. be used as passivation layer 13, Huo Zhexuan
Apply one layer of PI the dielectrics such as BCB and hot setting as passivation layer 13；
4) method for using photoetching, etching is processed (form window) partial region of passivation layer 13, into
And expose the extraction electrode region (can be regarded as the region pad) 121,122 at 12 both ends of conductive pattern；
5) photoetching/deposition of metal/removing or deposition of metal/photoetching/etching method, deposit solder layer are used；
The material of solder layer includes any one or two or more combinations in Cr, Ni, Ti, Al, Au, Au, Sn, or using common
Low temperature filler metal combination as solder layer, or do not need to form solder layer；
Referring to Fig. 3, pipe cap is processed:
6) refractive index and the good material (such as silicon wafer, vitreous silica piece etc.) of light transmittance is selected to be used as pipe cap material, using light
Quarter-reflux-etching method produces micro lens (i.e. lens) in the wherein one side (such as first surface) of pipe cap material
21, micro lens can be globe lens or non-globe lens；
7) double-sided alignment photoetching, etching technics are used, is produced in the other one side (such as second surface) of pipe cap material
Inner cavity 22,
8) photoetching/deposition of metal/removing or deposition of metal/photoetching/etching method deposit solder layer, weldering are used
The material of the bed of material can be any one or two or more combinations in Cr, Ni, Ti, Al, Au, Au, Sn；Alternatively, solder layer
Material can also use the combination of common low temperature filler metal, or do not need solder；Above micro lens, solder
Layer, inner cavity design and tube socket on chip there are aligned relationships；Pair for alignment can also be processed on tube socket simultaneously
Fiducial mark note；
Patch and lead:
9) chip mounter is used, detector chip (i.e. described) 3 is fixed on the passivation layer 13 of tube socket, and mention using wiring machine
Lead one end is electrically connected with chip (i.e. opto chip) 3 for lead 14, the extraction electrode area of the other end and conductive pattern 12
Domain 121 is electrically connected；And it is drawn on lead to interior pad using wiring machine；
Welding:
10) bonding apparatus is used, after pipe cap and tube socket alignment, is fixedly connected with pipe cap with tube socket in turn chip
It (is packaged in the package cavity body of the inner cavity formation of tube socket and pipe cap, as shown in Figure 1
It should be noted that pipe cap can will be made to be fixedly connected with tube socket by the way of Direct Bonding or welding；Welding
Solder prefabricated film, glass solder etc. can be used to be welded；Welding can be carried out in vacuum or fill in protective gas atmosphere；
Welding can be used device-device, device-wafer, wafer-wafer mode and be welded.
Embodiment 2
Please refer to Fig. 1 and Fig. 4, a kind of opto chip encapsulating structure includes by be wholely set 1 group of more than two tube sockets
At tube socket wafer 100, the pipe cap wafer 200 that is made of the more than two pipe caps 2 being wholely set, pipe cap wafer 200 and tube socket
Wafer 100 is welded and fixed, wherein each tube socket 1 and the pipe cap 2 matched and be packaged in the tube socket 1 and pipe cap 2 it
Between an at least opto chip 3 form an encapsulation unit, each encapsulation unit can be divided to form device independent of each other.
Pipe cap 2 includes pipe cap ontology, and pipe cap ontology has the first surface and second surface of opposite facing setting, pipe cap ontology
First surface on integrally formed with lens 21, be formed with inner cavity 22, inner cavity 22 on the second surface of pipe cap ontology
At least for accommodating an opto chip 3, lens 21 are correspondingly arranged with opto chip；Tube socket 1 includes insulating substrate 11, successively
Conductive layer in insulating substrate 11 and passivation layer 13 are set, and conductive layer includes more than one conductive pattern 12, each conductive pattern
The extraction electrode region 121,122 of shape is exposed from the process window of passivation layer 13, and the electrode of each opto chip 3 is by drawing
Line 14 is electrically connected with an at least extraction electrode region 121 for a corresponding conductive pattern 12, and each conductive pattern 12 is also extremely
Rare extraction electrode region 122 is arranged outside a corresponding pipe cap 2, i.e., electrode lead-out area 121 is located at the interior of pipe cap 2
Side, electrode lead-out area 122 are located at the outside of pipe cap 2, and pipe cap 2 is fixedly connected on passivation layer 13, and pipe cap 2 and passivation layer 13
Contact surface/line between welded seal.Alternatively, use can also be arranged on tube socket 1 in some more specific embodiments
In the inner cavity or like configurations of accommodating opto chip 3, the second surface of pipe cap can be plane.
Specifically, packaging method (integral lens of opto chip and the hermetic seal of a kind of opto chip encapsulating structure
Dress method), it may include steps of:
The step of packaging method of opto chip encapsulating structure in the present embodiment and 1 step 1) of embodiment-step 10)
The packaging method of opto chip encapsulating structure in almost the same and the present embodiment further includes step 11):
11) it cuts:
Referring to Fig. 4, tube socket wafer 100 is welded with pipe cap wafer 200 and needs to carry out cutting twice later, first
Secondary shallow cutting is cut according to cutting line 001, and the part of pad outside pipe cap partial occlusion tube socket is cut off, and second deep
It cuts and is cut according to cutting line 002, cut tube socket wafer to form individual devices.
It should be noted that not needing to cut if the mode of welding is device-device mode；If the mode of welding is device
Part-wafer mode then needs to cut tube socket wafer, forms individual devices.
After base is by integral lens and level Hermetic Package the method encapsulation of opto chip provided by the embodiment of the utility model
Device volume can greatly reduce, and when welding, which may not need, to be coupled, and cost can be effectively reduced, improve efficiency；Integrated
Micro lens precision is high, performance is good, alignment is accurate, can effectively improve system performance.
It should be appreciated that above-described embodiment is only to illustrate the technical ideas and features of the present invention, it is ripe its object is to allow
The personage for knowing technique can understand the content of the utility model and implement accordingly, can not limit the utility model with this
Protection scope.All equivalent change or modifications according to made by the spirit of the present invention essence, should all cover in the utility model
Within protection scope.
Claims (9)
1. a kind of opto chip encapsulating structure including tube socket, pipe cap and is packaged between the tube socket and pipe cap matched
Opto chip, the opto chip passes through lead and pipe cap external electrical connections, it is characterised in that: the pipe cap includes one
Body formed pipe cap ontology and lens, the lens are correspondingly arranged with opto chip.
2. opto chip encapsulating structure according to claim 1, it is characterised in that: on the first surface of the pipe cap ontology
Integrally formed with the lens, inner cavity is formed on the second surface of the pipe cap ontology, the inner cavity is at least used
In accommodating an opto chip, the first surface and the opposite facing setting of second surface.
3. opto chip encapsulating structure according to claim 1, it is characterised in that: the tube socket includes insulating substrate.
4. opto chip encapsulating structure according to claim 3, it is characterised in that: the insulating substrate includes silicon wafer, pottery
Any one in tile.
5. opto chip encapsulating structure according to claim 1, it is characterised in that: the material of the pipe cap be selected from silicon wafer or
Vitreous silica piece.
6. opto chip encapsulating structure according to claim 1, it is characterised in that: the opto chip includes detector
Chip, chip of laser, amplifier chip or driving chip.
7. opto chip encapsulating structure according to claim 1, it is characterised in that: the pipe cap is welded with corresponding tube socket
It is fixed.
8. opto chip encapsulating structure according to claim 3, it is characterised in that: be disposed in the insulating substrate
Conductive layer and passivation layer, the conductive layer include more than one conductive pattern, and the extraction electrode region of each conductive pattern is from blunt
Change and exposed in layer, the electrode of each opto chip passes through an at least extraction electrode for lead and a corresponding conductive pattern
Region electrical connection, and each conductive pattern also at least extraction electrode region is arranged outside a corresponding pipe cap.
9. opto chip encapsulating structure according to claim 1 to 8, it is characterised in that including by integrally setting
The tube socket wafer for the more than two tube sockets composition set, the pipe cap wafer being made of the more than two pipe caps being wholely set, the pipe
Cap wafer is welded and fixed with tube socket wafer, wherein each tube socket and the pipe cap matched and being packaged in the tube socket and pipe
An at least opto chip between cap forms an encapsulation unit, and each encapsulation unit can be divided to form device independent of each other
Part.
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| CN201822056684.3U CN209087854U (en) | 2018-12-07 | 2018-12-07 | Opto chip encapsulating structure |
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| CN201822056684.3U CN209087854U (en) | 2018-12-07 | 2018-12-07 | Opto chip encapsulating structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109411549A (en) * | 2018-12-07 | 2019-03-01 | 苏州苏纳光电有限公司 | Opto chip encapsulating structure and packaging method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109411549A (en) * | 2018-12-07 | 2019-03-01 | 苏州苏纳光电有限公司 | Opto chip encapsulating structure and packaging method |
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