CN112630520A - Voltage sampling circuit based on micro-nano gap diode array - Google Patents
Voltage sampling circuit based on micro-nano gap diode array Download PDFInfo
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- CN112630520A CN112630520A CN202011604066.3A CN202011604066A CN112630520A CN 112630520 A CN112630520 A CN 112630520A CN 202011604066 A CN202011604066 A CN 202011604066A CN 112630520 A CN112630520 A CN 112630520A
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- 238000005070 sampling Methods 0.000 title claims abstract description 28
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000013461 design Methods 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 6
- 230000009471 action Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000005036 potential barrier Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/25—Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques
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Abstract
The invention discloses a voltage sampling circuit based on a micro-nano gap diode array. The micro-nano gap diode, the resistor and the voltage stabilizing diode with specific gap sizes form a branch, when the voltage of an analog signal is higher than that of the micro-nano gap diode of the branch, the branch is conducted, the threshold voltages of the diodes with different gap sizes are different, and detection of different voltage levels of the analog signal can be achieved. The micro-nano gap diode has small size, simple design and high voltage starting speed, and the circuit has good application prospect in the field of high-speed analog-to-digital conversion.
Description
Technical Field
The invention relates to the field of micro-nano gap devices and the field of analog-to-digital conversion circuit design, in particular to a voltage sampling circuit based on a micro-nano gap diode array.
Background
The micro-nano gap device is characterized in that an electric field is applied to cause a potential barrier near the contact surface of a conductor or a semiconductor and an insulator to be bent and narrowed, so that electrons tunnel out of the conductor or the semiconductor and are subjected to ballistic transport in the gap under the action of the electric field to form current, and when a gas environment is in the gap, the electrons collide with gas molecules under the action of high field strength to further ionize the gas molecules and improve the emission current density, so that the speed of the micro-nano gap device is higher than that of a solid electronic device. An ADC circuit is a circuit that converts an analog signal into a digital signal, and in recent years, with rapid update of the internet of things and other industries, an ADC chip is continuously developed to a faster speed, a higher precision, a lower power consumption, and a smaller area. ADCs are generally classified into an integrating ADC, a successive approximation ADC, a pipeline ADC, and the like. The sampling circuit of the pipelined ADC has a plurality of comparators for sampling analog signals in parallel, so that the sampling circuit is high in speed, and large in power consumption and area due to the large number of the comparators. Therefore, research into a novel sampling circuit helps to solve the above-mentioned disadvantages of the pipeline ADC.
Disclosure of Invention
The invention aims to provide a voltage sampling circuit based on a micro-nano gap diode array, which comprises micro-nano gap diodes with different gap sizes, wherein the diode gaps are different, and the on-state voltage values of corresponding branches are different due to different threshold voltages of the diodes, so that the voltage values of different grades can be sampled. The diode has small size, is beneficial to large-scale integration so as to further improve the sampling precision and range of the pipelined ADC, has high voltage starting speed and is beneficial to realizing rapid sampling.
The technical scheme is as follows: the invention relates to a voltage sampling circuit based on a micro-nano gap diode array, which comprises: the device comprises a signal input interface, a micro-nano gap diode array, a lead, a resistor, a voltage stabilizing diode and a signal output port; the signal input interface is connected with the positive end of the micro-nano gap diode array, the negative end of the micro-nano gap diode array is connected with the resistor through a lead, and the other end of the resistor is connected with the voltage stabilizing diode and the signal output port respectively.
The gap size of each diode in the micro-nano gap diode array is different, and the gap size is in the micron and nano magnitude; the number of diodes is arbitrary.
The gap material in the micro-nano gap diode array is in a vacuum or gas environment, and the electrode of the micro-nano gap diode array is made of a conductor material.
The micro-nano gap diode array, the resistor and the voltage stabilizing diode are connected in series through a lead, the negative electrode of the voltage stabilizing diode is grounded, and the number of the voltage stabilizing diodes is the same as that of the micro-nano gap diode array.
The other end of the resistor is respectively connected with the voltage stabilizing diode and the encoder, and the output end of the encoder is connected with the signal output port.
Has the advantages that: compared with the prior art, the invention has the following advantages:
1. compared with other non-pipelined ADC sampling circuits, the working mode of the circuit belongs to a pipelined sampling mode, and the sampling speed is higher;
2. compared with the traditional pipelined ADC, the circuit of the invention adopts the micro-nano gap diode to finish the voltage comparison function, and the micro-nano gap diode has high speed and higher sampling speed;
3. compared with the traditional pipelined ADC, the circuit of the invention adopts the micro-nano gap diode to complete the function of voltage comparison, the micro-nano gap diode is simple to prepare, small in area and lower in preparation cost;
4. compared with the traditional pipelined ADC, the circuit of the invention adopts the micro-nano gap diode to finish the voltage comparison function, the micro-nano gap diode has small area, can be prepared in large scale, and is beneficial to improving the sampling precision and range of the pipelined ADC;
drawings
Fig. 1 is a schematic circuit diagram of a voltage sampling circuit based on a micro-nano gap diode array according to the present invention;
fig. 2 is a schematic diagram of a simple ADC of a voltage sampling circuit based on a micro-nano gap diode array according to the present invention;
the figure shows that: the device comprises a signal input interface 1, a micro-nano gap diode array 2, a lead 3, a resistor 4, a voltage stabilizing diode 5 and a signal output port 6.
Detailed Description
The invention provides a voltage sampling circuit based on a micro-nano gap diode array, which mainly comprises: the device comprises a signal input interface, a micro-nano gap diode array, a lead, a resistor, a voltage stabilizing diode and a signal output port.
The micro-nano gap-carrying diode array controls the voltage value of the opening of the branch circuit by controlling the size of the gap, and after the branch circuit is conducted, the voltage value of the output interface is maintained at the level value of the voltage stabilizing diode, so that the voltage value sampling of the corresponding grade is completed.
And the signal input interface is connected with the micro-nano gap diode array.
The circuit comprises a micro-nano gap diode array, the gap size of each diode in the micro-nano gap diode array is different, and the number of the diodes is an arbitrary value; the gap size is in the micron and nanometer level; the gap material is vacuum or any gas environment, and the electrode can be made of any conductor material or semiconductor material by any process. The thickness of the inversion layer is equivalent to that of the semiconductor thin film layer when strong inversion occurs under the action of the voltage of the back gate electrode, and the semiconductor thin film layer is made of a semiconductor material with any doping concentration.
The micro-nano gap diode array, the resistor and the voltage stabilizing diode are connected in series through a lead, the voltage stabilizing diode is grounded, and the number of the voltage stabilizing diodes is any value. The collector film layer is flush with the side wall of the groove or is suspended at the top of the groove. The material of which is one or more of any conductive material.
The micro-nano gap diodes with different sizes are designed, the conduction voltage values of different branches can be controlled, when the branches are not conducted, the level of an output end is low, and the voltage value of the output end is high after the branches are conducted, which means that the amplitude of an input signal is larger than the threshold voltage of the branch. This approach can replace the function of the comparator.
The following detailed description, which is to be read in connection with the accompanying drawings and is set forth below in a more particular manner, is intended to be illustrative of the invention and is not intended to limit the scope of the invention. It should be noted that the terms "front," "back," "left," "right," "upper" and "lower" used in the following description refer to directions in the drawings, and the terms "inner" and "outer" refer to directions toward and away from, respectively, the geometric center of a particular component.
The invention is further explained below with reference to the figures and examples:
example 1:
a voltage sampling circuit based on a micro-nano gap diode array is shown in figures 1-2, and comprises: from bottom to top respectively: the device comprises a signal input interface (1), a micro-nano gap diode array (2), a lead (3), a resistor (4), a voltage stabilizing diode (5) and a signal output port (6).
Wherein the analog signal is input from the signal input interface (1);
the micro-nano gap diode array (2) can be prepared on a silicon oxide wafer by adopting the process flows of electron beam lithography, development, electron beam deposition of a Ta metal film and stripping, and the sizes of the nano gaps are 60nm, 80nm, 100nm and 120nm respectively;
the resistance (4) is 100 ohms;
the voltage stabilizing diode (5) has the level of 0.7V;
the encoder adopts a four-input encoder, the ADC circuit is shown in figure 2, and the conversion from an analog signal to a digital signal can be completed after a sampling signal is input into the encoder.
The above examples are intended to illustrate the invention, but not to limit it. Any modification and variation of the present invention within the spirit of the present invention and the scope of the claims will fall within the scope of the present invention.
Claims (5)
1. A voltage sampling circuit based on a micro-nano gap diode array is characterized in that: the circuit includes: the device comprises a signal input interface (1), a micro-nano gap diode array (2), a lead (3), a resistor (4), a voltage stabilizing diode (5) and a signal output port (6); the signal input interface (1) is connected with the positive end of the micro-nano gap diode array (2), the negative end of the micro-nano gap diode array (2) is connected with the resistor (4) through the lead (3), and the other end of the resistor (4) is connected with the voltage stabilizing diode (5) and the signal output port (6) respectively.
2. The voltage sampling circuit based on the micro-nano gap diode array according to claim 1, characterized in that: the gap size of each diode in the micro-nano gap diode array (2) is different, and the gap size is in the micron and nano magnitude; the number of diodes is arbitrary.
3. The voltage sampling circuit based on the micro-nano gap diode array according to claim 1, characterized in that: the gap material in the micro-nano gap diode array (2) is in a vacuum or gas environment, and the electrode of the micro-nano gap diode array is made of a conductor material.
4. The voltage sampling circuit based on the micro-nano gap diode array according to claim 1, characterized in that: the micro-nano gap diode array (2), the resistor (4) and the voltage stabilizing diode (5) are connected in series through the lead (3), the negative electrode of the voltage stabilizing diode (6) is grounded, and the number of the voltage stabilizing diodes (6) is the same as that of the micro-nano gap diode array (2).
5. The voltage sampling circuit based on the micro-nano gap diode array according to claim 1, characterized in that: the other end of the resistor (4) is respectively connected with a voltage stabilizing diode (5) and an encoder, and the output end of the encoder is connected with a signal output port (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202011604066.3A CN112630520B (en) | 2020-12-30 | 2020-12-30 | Voltage sampling circuit based on micro-nano gap diode array |
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| CN202011604066.3A CN112630520B (en) | 2020-12-30 | 2020-12-30 | Voltage sampling circuit based on micro-nano gap diode array |
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| CN112630520A true CN112630520A (en) | 2021-04-09 |
| CN112630520B CN112630520B (en) | 2023-12-08 |
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Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5359327A (en) * | 1993-05-28 | 1994-10-25 | Brown Eric W | A/D converter system with interface and passive voltage reference source |
| JPH07336225A (en) * | 1994-06-08 | 1995-12-22 | Hitachi Ltd | A/d converter |
| JPH11307219A (en) * | 1998-04-22 | 1999-11-05 | Okaya Electric Ind Co Ltd | Manufacture of discharge type surge absorption element |
| US20050189871A1 (en) * | 2002-03-06 | 2005-09-01 | Avto Tavkhelidze | Thermionic vacuum diode device with adjustable electrodes |
| CN101330093A (en) * | 2007-06-22 | 2008-12-24 | 株式会社船井电机新应用技术研究所 | Memory element array |
| CN101645709A (en) * | 2008-08-06 | 2010-02-10 | 中国科学院半导体研究所 | RTD and EHEMT-based Ultrahigh-speed all parallel analog-to-digital converter |
| US20120105263A1 (en) * | 2010-10-29 | 2012-05-03 | John Paul Strachan | Analog to digital converter |
| US8400343B1 (en) * | 2011-10-18 | 2013-03-19 | Himax Technologies Limited | Pipeline analog to digital converter with split-path level shifting technique |
| CN102983863A (en) * | 2012-12-18 | 2013-03-20 | 天津大学 | First-stage circuit structure of pipelined analog-to-digital converter |
| CN104915068A (en) * | 2014-03-11 | 2015-09-16 | 索尼公司 | Optical analog to digital converter and method |
| US20190113476A1 (en) * | 2017-10-16 | 2019-04-18 | Analog Devices Global Unlimited Company | Methods and systems for readout of nanogap sensors |
| CN110609164A (en) * | 2019-09-23 | 2019-12-24 | 广东蓄能发电有限公司 | AC/DC voltage acquisition circuit of data acquisition recorder |
-
2020
- 2020-12-30 CN CN202011604066.3A patent/CN112630520B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5359327A (en) * | 1993-05-28 | 1994-10-25 | Brown Eric W | A/D converter system with interface and passive voltage reference source |
| JPH07336225A (en) * | 1994-06-08 | 1995-12-22 | Hitachi Ltd | A/d converter |
| JPH11307219A (en) * | 1998-04-22 | 1999-11-05 | Okaya Electric Ind Co Ltd | Manufacture of discharge type surge absorption element |
| US20050189871A1 (en) * | 2002-03-06 | 2005-09-01 | Avto Tavkhelidze | Thermionic vacuum diode device with adjustable electrodes |
| CN101330093A (en) * | 2007-06-22 | 2008-12-24 | 株式会社船井电机新应用技术研究所 | Memory element array |
| CN101645709A (en) * | 2008-08-06 | 2010-02-10 | 中国科学院半导体研究所 | RTD and EHEMT-based Ultrahigh-speed all parallel analog-to-digital converter |
| US20120105263A1 (en) * | 2010-10-29 | 2012-05-03 | John Paul Strachan | Analog to digital converter |
| US8400343B1 (en) * | 2011-10-18 | 2013-03-19 | Himax Technologies Limited | Pipeline analog to digital converter with split-path level shifting technique |
| CN102983863A (en) * | 2012-12-18 | 2013-03-20 | 天津大学 | First-stage circuit structure of pipelined analog-to-digital converter |
| CN104915068A (en) * | 2014-03-11 | 2015-09-16 | 索尼公司 | Optical analog to digital converter and method |
| US20190113476A1 (en) * | 2017-10-16 | 2019-04-18 | Analog Devices Global Unlimited Company | Methods and systems for readout of nanogap sensors |
| CN209342031U (en) * | 2017-10-16 | 2019-09-03 | 亚德诺半导体无限责任公司 | System for reading one or more nanogap sensors |
| CN110609164A (en) * | 2019-09-23 | 2019-12-24 | 广东蓄能发电有限公司 | AC/DC voltage acquisition circuit of data acquisition recorder |
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| CN112630520B (en) | 2023-12-08 |
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