CN101645709A - RTD and EHEMT-based Ultrahigh-speed all parallel analog-to-digital converter - Google Patents
RTD and EHEMT-based Ultrahigh-speed all parallel analog-to-digital converter Download PDFInfo
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- CN101645709A CN101645709A CN200810118014A CN200810118014A CN101645709A CN 101645709 A CN101645709 A CN 101645709A CN 200810118014 A CN200810118014 A CN 200810118014A CN 200810118014 A CN200810118014 A CN 200810118014A CN 101645709 A CN101645709 A CN 101645709A
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Abstract
The invention discloses a resonant tunneling diode (RTD) and enhanced high electron mobility transistor (EHEMT)-based ultrahigh-speed all parallel analog-to-digital converter. The analog-to-digital converter consists of 2<n>-1 comparators and n coders, wherein the n is the digit of the analog-to-digital converter; the comparators are connected in parallel, analog signals input to the comparators are input by adopting a parallel connection mode, and each bit conversion of a temperature code is finished once in a single step; and the coders are connected in parallel, signals input to the comparators are input by adopting the parallel connection mode, and the conversion from the temperature code to a binary code is also finished once in a single step. The ultrahigh-speed all parallel analog-to-digital converter realizes an extremely simple comparator circuit and a simple coder circuit, greatly simplifies the circuit structure, reduces the power consumption, and realizes the design targetof ultrahigh speed and low power consumption.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly the hybrid digital-analog integrated circuit aspect is a kind of based on resonance tunnel-through diode (RTD) and parallel entirely (flash) analog to digital converter (ADC) of the ultrahigh speed of enhancement type high electron mobility transistor (EHEMT).
Background technology
The signal that needs to handle in circuit has two classes: digital signal and analog signal.Analog signal is handled under the continually varying situation; And being quantified as binary form 0 and 1, the processing of digital signal carries out.Need in many cases these two kinds of baseband signals processing are coupled together, and realize two kinds of conversions between the signal, this just needs realize with analog to digital converter (ADC) or digital to analog converter (DAC).
In modern advanced electronic equipment or electronic system, analog to digital converter and digital to analog converter be such as radar, sonar, high-resolution video and image demonstration, military affairs and imaging of medical, high performance control device and driver and comprise radio telephone and modern electronic equipment such as the digital communication system of base station receiver or system in indispensable important component part.
The making of ADC has been gone through electron tube, transistor to the development of integrated circuits process.Product category develops into present integrated transducer from first generation discrete semiconductor assembly type transducer, second generation integrated circuit package type transducer.In integrated transducer, can be divided into the integrated transducer of module, mixing and monolithic again.Along with the continuous progress of semiconductor integration making technology, the performance of the integrated ADC of monolithic can match in excellence or beauty with module/hybrid converter, and has advantages such as low cost, low-power consumption, small size.Therefore, the realization of the integrated ADC of monolithic is the main flow of present ADC research.
General switching rate surpasses 1Msps can think high-speed ADC, even the present the fastest flash ADC of switching rate also only can reach the switching rate of several Gsps.Development ADC more at a high speed is the direction as challenge.
RTD and HEMT are the quantum devices with high-frequency high-speed characteristic, and the present maximum frequency of oscillation that reaches reaches respectively or near the THz magnitude.The monolithic integrated circuit of being made up of RTD and HEMT is one of developing direction of following very high speed integrated circuit.If therefore can develop adc circuit, might realize superfast switching rate based on RTD and HEMT.Especially adopt the adc circuit of complete parallel (flash) structure, switching rate may realize tens Gsps, even surpass 100Gsps.Utilize the negative resistance charactertistic of RTD simultaneously, can greatly simplify circuit structure, needed device count is than the low order of magnitude of ordinary CMOS.Few device count also just makes low that the power consumption of entire circuit can be suitable, and the excessive significant challenge that also modern very lagre scale integrated circuit (VLSIC) faced just of power consumption.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of ultrahigh speed all-parallel A/D converter based on RTD and EHEMT, to simplify circuit structure, reduces power consumption, realizes superfast switching rate.
(2) technical scheme
For achieving the above object, the invention provides a kind of ultrahigh speed all-parallel A/D converter based on resonance tunnel-through diode (RTD) and enhancement type high electron mobility transistor (EHEMT), this analog to digital converter is by 2
n-1 comparator and n encoder constitute, and n is the figure place of analog to digital converter; Wherein, each comparator is connected in parallel, and the analog signal of importing each comparator adopts the parallel way input, and each bit map of thermometer code is disposable finishing in a single step; Each encoder is connected in parallel, and the signal of importing each encoder also adopts the parallel way input, and thermometer code is to the conversion of binary code also disposable finishing in a single step.
In the such scheme, described comparator adopts the super succinct structure comparator circuit based on RTD and EHEMT, is made of a RTD, a resistor and an EHEMT.
In the such scheme, described encoder adopts the super succinct structured coding device circuit based on RTD and EHEMT, is made of with EHEMT with the corresponding number of thermometer code figure place a RTD.
In the such scheme, all be connected with one by a RTD and the inverter circuit that EHEMT constitutes after described each comparator circuit or each coding circuit, this inverter circuit has anti-phase effect, and the not really desirable high-low level signal that comparator produces can be converted into desirable high-low level signal.
In the such scheme, this analog to digital converter adopts a clock signal, and this clock signal is used for the sampling of analog signal and the startup or the zero clearing of comparator circuit logic simultaneously.
In the such scheme, this analog to digital converter adopts a DC level, and this DC level is used for the adjusting at analog signal input zero point and provides direct current biasing for decoding circuit and inverter circuit.
In the such scheme, this analog to digital converter meets the RTD and the EHEMT device technology of existing GaAs base and the basic chip of InP to the demand of device parameters, and the crest voltage of RTD is between 0.2V～2V, and the cut-in voltage of EHEMT is between 0V～0.2V.
In the such scheme, this analog to digital converter is applicable to InP base, GaAs base and Si base microwave monolithic integrated circuit mmic chip.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
This ultrahigh speed all-parallel A/D converter provided by the invention based on RTD and EHEMT, adopt RTD and EHEMT, realized extremely simple comparator circuit and simple encoder circuit, simplified circuit structure greatly, and obtained good dry run result.Because this circuits needed number of devices wants much less than traditional needed number of devices of flash ADC, almost little order of magnitude is so the power consumption of circuit is also much smaller.Add complete parallel structural design and adopt operating frequency to reach RTD and the HEMT device of hundreds of GHz, its operating frequency is expected to considerably beyond various ADC now, has realized the design object of ultrahigh speed, low-power consumption.This ultrahigh speed all-parallel A/D converter based on RTD and EHEMT provided by the invention is applicable to various RTD and HEMT integrated technology.
Description of drawings
Fig. 1 is the I-V characteristic curve schematic diagram of RTD;
Fig. 2 is 4 flash ADC structural representations provided by the invention;
Fig. 3 is comparator 108 circuit diagrams among the present invention;
Fig. 4 is the comparator 108 input/output signal schematic diagrames that analog simulation obtains among the present invention;
Fig. 5 is encoder 201 circuit diagrams among the present invention;
Fig. 6 is encoder 202 circuit diagrams among the present invention;
Fig. 7 is encoder 203 circuit diagrams among the present invention;
Fig. 8 is encoder 204 circuit diagrams among the present invention;
Fig. 9 is the analog signal-digital signal conversion schematic diagram that obtains by analog simulation among the present invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
This ultrahigh speed all-parallel A/D converter based on RTD and EHEMT provided by the invention is by 2
n-1 comparator and n encoder constitute, and n is the figure place of analog to digital converter; Wherein, each comparator is connected in parallel, and the analog signal of importing each comparator adopts the parallel way input, and each bit map of thermometer code is disposable finishing in a single step; Each encoder is connected in parallel, and the signal of importing each encoder also adopts the parallel way input, and thermometer code is to the conversion of binary code also disposable finishing in a single step.
Shown in Figure 1 is the I-V characteristic curve schematic diagram of RTD.RTD is the quantum device with negative resistance charactertistic, and when the voltage at RTD two ends surpassed a certain specific magnitude of voltage, RTD can enter high-impedance state, and Imax is the RTD peak current among the figure, and Vmax is the crest voltage of RTD.
Shown in Figure 2 is 4 flash ADC structural representations provided by the invention.4 flash ADC are made up of 15 comparators and 4 encoders, and it is 15 thermometer code that 15 comparators are used for analog signal conversion, and the thermometer code that 4 encoders are used for 15 converts 4 binary codes to.Adopt 4 flash ADC only for demonstration the present invention,, need 2 for the flash ADC of n position
n-1 comparator and n encoder.Among the figure 101,102 ..., 115 represent 15 comparators respectively, 201,202,203,204 represent 4 encoders respectively; V
In+ V
DdBe input signal, wherein V
InBe the analog signal that needs are converted, V
DdBe additional DC level; V
Out10, V
Out20..., V
Out150Be the thermometer code signal that each comparator obtains, V
Out11, V
Out21..., V
Out151The complementary signal of the thermometer code signal that obtains for each comparator.
Shown in Figure 3 be comparator 108 circuit diagrams among the present invention.301,302 is RTD among the figure, and 401,402 is EHEMT, and 508 is resistor, V
InBe the analog signal that needs are converted, V
DdBe additional DC level, V
ClkBe clock control signal, be used for simultaneously to the startup/zero clearing of analog signal sampling with the control comparator logic, V
Out81The complementary signal of the thermometer code signal that obtains for comparator 108, V
Out80The thermometer code signal that obtains for comparator 108.Being comparison logic in the dashed rectangle of the left side among the figure, is negative circuit in the dashed rectangle of the right.The basic principle of this comparator is: the voltage when the RTD301 two ends is lower than crest voltage V
MaxThe time, RTD301 is in low resistance state, and the electric current that flows through is bigger, thereby the voltage drop on resistor 508 and the EHEMT401 is also bigger, output V
Out81Be high level, output V
Out80Be low level; Voltage when the RTD301 two ends is higher than crest voltage V
MaxThe time, RTD301 is in high-impedance state, and the electric current that flows through is less, thereby the voltage drop on resistor 508 and the EHEMT401 is also less, output V
Out81Be low level, output V
Out80Be high level.The resistance of resistor satisfies following relation
V
mzx+I
max(r
508+r
401)＝V
dd+7.5V
0(1)
R wherein
508Be resistor resistance, r
401Be V
ClkThe source electric leakage resistance of EHEMT401 when being in high level, V
0Be the pairing input analog signal voltage of the every increase of binary code signal " 1 " value.V is worked as in above equation explanation
InDuring＞7.5V0, RTD301 will enter high-impedance state.
Other 14 comparators also all adopt identical circuit structure, different places only be that the resistance value of the resistor in each comparator is different.The resistance value of resistor satisfies following relational expression in each comparator
V
max+I
max(r
m+r
401)＝V
dd+(n-0.5)V
0(2)
r
mBe the resistance value of resistor m, wherein the value of m be respectively 501,502 ..., 515, the value of the n that it is corresponding is respectively 1,2 ..., 15.
Figure 4 shows that the input/output signal schematic diagram of the comparator 108 that obtains by analog simulation among the present invention.V
InBe the analog signal of input, V
ClkBe the clock control signal of input, V
Out81And V
Out80Be respectively the output voltage signal of corresponding points among Fig. 3.V
Out81High-low level distinguish as shown in Figure 4, high level has bigger excursion; V
Out80High-low level then be quite desirable.As can be seen from the figure, V
Out80At V
InDuring less than certain particular value, output is low level always, works as V
InWhen being higher than this value, V
Out80Output all is high level.V
Out81High-low level output situation then fully and V
Out80On the contrary.For other each comparator, the output situation is all similar with comparator 108, only is that the high-low level specific voltage value that begins to change is different, and its concrete numerical value is determined by formula (2).
Figure 5 shows that encoder 201 circuit diagrams among the present invention.311 and 312 is RTD among the figure, and 411 and 412 is EHEMT.Input signal is V
Out80, output signal V
100Be exactly first (highest order) from left to right output of analog to digital converter gained binary code.This encoder in fact only is a delay circuit of being made up of two RTD inverters, output when being used to realize with other triad signal.
Figure 6 shows that encoder 202 circuit diagrams among the present invention.321 and 322 is RTD among the figure, and 421,422,423 and 424 is EHEMT.Input signal is V
Out40, V
Out81And V
Out120, output signal V
200Be exactly second output from left to right of analog to digital converter gained binary code.
Figure 7 shows that encoder 203 circuit diagrams among the present invention.331 and 332 is RTD among the figure, 431,432 ... and 438 be EHEMT.Input signal is V
Out20, V
Out41, V
Out60, V
Out81, V
Out100, V
Out121And V
Out140, output signal V
300Be exactly the 3rd output from left to right of analog to digital converter gained binary code.
Figure 8 shows that encoder 204 circuit diagrams among the present invention.341 and 342 is RTD among the figure, 441,442 ... and 4416 be EHEMT.Input signal is V
Out10, V
Out21, V
Out30, V
Out41, V
Out50, V
Out61, V
Out70, V
Out81, V
Out90, V
Out101, V
Out110, V
Out121, V
Out130, V
Out141And V
Out150, output signal V
400Be exactly the 4th (lowest order) from left to right output of analog to digital converter gained binary code.
Realized from the conversion of 15 thermometer code to 4 binary codes by above 4 encoders.
Figure 9 shows that the analog signal-digital signal conversion schematic diagram that obtains by analog simulation among the present invention.V
InBe input analog signal, V
100, V
200, V
300And V
400For exporting 4 binary code signal.Transformation result is goodish as can be seen, without any logic error.Circuit provided by the invention has successfully been realized the conversion from the analog signal to the digital signal.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1, a kind of ultrahigh speed all-parallel A/D converter based on resonance tunnel-through diode RTD and enhancement type high electron mobility transistor EHEMT is characterized in that this analog to digital converter is by 2
n-1 comparator and n encoder constitute, and n is the figure place of analog to digital converter; Wherein, each comparator is connected in parallel, and the analog signal of importing each comparator adopts the parallel way input, and each bit map of thermometer code is disposable finishing in a single step; Each encoder is connected in parallel, and the signal of importing each encoder also adopts the parallel way input, and thermometer code is to the conversion of binary code also disposable finishing in a single step.
2, the ultrahigh speed all-parallel A/D converter based on RTD and EHEMT according to claim 1, it is characterized in that, described comparator adopts the super succinct structure comparator circuit based on RTD and EHEMT, is made of a RTD, a resistor and an EHEMT.
3, the ultrahigh speed all-parallel A/D converter based on RTD and EHEMT according to claim 1, it is characterized in that, described encoder adopts the super succinct structured coding device circuit based on RTD and EHEMT, is made of with EHEMT with the corresponding number of thermometer code figure place a RTD.
4, according to claim 2 or 3 described ultrahigh speed all-parallel A/D converters based on RTD and EHEMT, it is characterized in that, all be connected with one by a RTD and the inverter circuit that EHEMT constitutes after described each comparator circuit or each coding circuit, this inverter circuit has anti-phase effect, and the not really desirable high-low level signal that comparator produces can be converted into desirable high-low level signal.
5, the ultrahigh speed all-parallel A/D converter based on RTD and EHEMT according to claim 1, it is characterized in that, this analog to digital converter adopts a clock signal, and this clock signal is used for the sampling of analog signal and the startup or the zero clearing of comparator circuit logic simultaneously.
6, the ultrahigh speed all-parallel A/D converter based on RTD and EHEMT according to claim 1, it is characterized in that, this analog to digital converter adopts a DC level, and this DC level is used for the adjusting at analog signal input zero point and provides direct current biasing for decoding circuit and inverter circuit.
7, the ultrahigh speed all-parallel A/D converter based on RTD and EHEMT according to claim 1, it is characterized in that, this analog to digital converter meets the RTD and the EHEMT device technology of existing GaAs base and InP base chip to the demand of device parameters, the crest voltage of RTD is between 0.2V～2V, and the cut-in voltage of EHEMT is between 0V～0.2V.
8, the ultrahigh speed all-parallel A/D converter based on RTD and EHEMT according to claim 1 is characterized in that, this analog to digital converter is applicable to InP base, GaAs base and Si base microwave monolithic integrated circuit mmic chip.
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| CN2008101180148A CN101645709B (en) | 2008-08-06 | 2008-08-06 | RTD and EHEMT-based Ultrahigh-speed all parallel analog-to-digital converter |
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| CN2008101180148A CN101645709B (en) | 2008-08-06 | 2008-08-06 | RTD and EHEMT-based Ultrahigh-speed all parallel analog-to-digital converter |
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| CN101645709B CN101645709B (en) | 2011-06-01 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112630520A (en) * | 2020-12-30 | 2021-04-09 | 东南大学 | Voltage sampling circuit based on micro-nano gap diode array |
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| WO2004051858A2 (en) * | 2002-12-04 | 2004-06-17 | Koninklijke Philips Electronics N.V. | Non-linear distribution of voltage steps in flash-type a/d converters |
| CN100521546C (en) * | 2005-04-26 | 2009-07-29 | 曹先国 | Comparer and analog-to-digital converter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112630520A (en) * | 2020-12-30 | 2021-04-09 | 东南大学 | Voltage sampling circuit based on micro-nano gap diode array |
| CN112630520B (en) * | 2020-12-30 | 2023-12-08 | 东南大学 | Voltage sampling circuit based on micro-nano gap diode array |
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