CN112636177B - Packaging structure for improving heat dissipation of high-power terahertz semiconductor laser - Google Patents
Packaging structure for improving heat dissipation of high-power terahertz semiconductor laser Download PDFInfo
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- CN112636177B CN112636177B CN202011513402.3A CN202011513402A CN112636177B CN 112636177 B CN112636177 B CN 112636177B CN 202011513402 A CN202011513402 A CN 202011513402A CN 112636177 B CN112636177 B CN 112636177B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
- H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0208—Semi-insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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Abstract
A packaging structure for improving heat dissipation of a high-power terahertz semiconductor laser comprises: a heat sink; a first metal layer; a second metal layer; the secondary heat sink is provided with an inverted trapezoidal groove; a terahertz semiconductor laser including a substrate; a second doped layer; an active region having a trapezoidal structure; the first doping layer is used as an electrical injection contact layer of the negative electrode of the laser; the ohmic contact layer is used for realizing ohmic contact between the negative electrode and the first doping layer; a metallic waveguide layer; an insulating layer for preventing a short circuit between the active region and the negative electrode; electroplating a gold layer as a heat dissipation layer of the secondary heat sink; an electrode layer; a third metal layer; and the top fourth metal layer is connected with the negative electrode. The semi-insulating gallium arsenide secondary heat sink is adopted as the secondary heat sink, the semi-insulating gallium arsenide secondary heat sink has high heat conductivity at low temperature, thermal mismatch with materials of an active area of a laser does not exist, the secondary heat sink provides a high-efficiency heat dissipation channel for the laser, and high-power work of the terahertz semiconductor laser is achieved.
Description
Technical Field
The invention relates to the technical field of heat dissipation and packaging of terahertz waveband high-power semiconductor laser devices, in particular to a packaging structure for improving heat dissipation of a high-power terahertz semiconductor laser device.
Background
The terahertz wave band (1-10THz) electromagnetic wave has low photon energy and has the characteristic of fingerprint identification corresponding to specific rotation energy levels of some small molecules, so the terahertz wave band has huge application potential in the fields of nondestructive testing, molecular biological identification and astronomy; in addition, the wavelength of the ultra-wideband antenna is long, and the ultra-wideband antenna also has higher commercial value in the aspect of ultra-wideband wireless communication. However, due to the influence of carrier transit time and parasitic capacitance in the electronic circuit, and the lack of corresponding narrow bandgap semiconductor luminescent materials, it is difficult to realize a high-power THz source in the so-called "THz gap THz-gap (1THz-10 THz)" region by both electronic and photonic methods. The appearance of terahertz quantum cascade lasers (THz-QCLs) creatively fills up the Gap and has the characteristics of high power and high efficiency. THz-QCLs are used as a unipolar terahertz semiconductor laser, and realize stimulated radiation luminescence by utilizing transition of electrons between quantum energy levels in a multi-period coupling quantum well conduction band; the frequency range of 0.8THz to 5.4THz can be covered at present, the peak output power of 2W under pulse operation can be realized, and the power under continuous wave operation can reach 230 mW. However, the active region of THz-QCLs generally comprises hundreds of light emitting periods, and a channel for transporting electrons is formed by thousands of layers of molecular beam epitaxial semiconductor thin film materials, and the interface of thousands of layers of thin film materials in the direction perpendicular to the epitaxial surface causes the thermal conductivity of the active region along the direction to be greatly reduced, which is only one tenth of the thermal conductivity along the epitaxial surface. In addition, the photon energy of 1THz corresponds to 4.1meV, and the commonly used 3-4THz frequency is only 16 meV; for the current mature GaAs/AlGaAs (gallium arsenide/aluminum gallium arsenide) system of the THz-QCLs active area material, the longitudinal optical phonon energy is 36 meV; the smaller photon energy of THz photons makes them more susceptible to lattice scattering and hot electron scattering in the active region, and these two scattering mechanisms are closely related to the temperature of the active region. In combination of the two aspects, the THz-QCLs active region generates much heat, has low heat dissipation efficiency and is easy to be influenced by heat in the process of stimulated radiation luminescence, and is limited by the factors, so that the THz-QCLs can only work at low temperature at present. Therefore, the design optimization of the heat dissipation of the THz-QCLs is carried out in the aspects of device structure and packaging, and the design optimization of the THz-QCLs has important significance for improving the power and the working temperature of the THz-QCLs.
In order to improve the heat dissipation of THz-QCLs and realize high-power output, the current effective measure is to adopt a flip-chip bonding packaging mode for devices, find a secondary heat sink with high resistance and high thermal conductivity, such as aluminum nitride, silicon carbide, sapphire, monocrystalline silicon and the like, manufacture a patterned electrode on the secondary heat sink, align and press-bond a light-emitting ridge (laser cathode) and a supporting ridge (laser anode) on the corresponding patterned electrode area on the secondary heat sink by using a chip mounter, and then sinter the secondary heat sink with a tube core on a copper heat sink to realize the heat dissipation towards the direction of a refrigerating machine or a cold end filled with a refrigerant. Compared with a forward-welding device, the flip-chip laser has the advantages that the active area of the device is closer to the heat sink, so that the heat dissipation efficiency of the hottest light-emitting core in the device in the direction vertical to the epitaxial surface is improved; but at the same time, has some disadvantages; one of them is: in the past, the flip-chip bonding method is to bond the top of the ridge to the secondary heat sink, and although the active area is close to the heat sink, the side wall of the ridge is not in direct contact with the heat sink, i.e. no heat dissipation channel is provided in the transverse direction. According to the above analysis, the thermal conductivity of the THz-QCLs in the direction vertical to the epitaxial surface is one tenth of that along the epitaxial surface, so that the heat dissipation efficiency of the flip chip bonding of the device can be greatly improved if an effective heat dissipation channel exists transversely; a second step: secondary heat sinks selected in the past, such as powder sintered A1N (aluminum nitride), single crystal sapphire, polycrystalline diamond grown by vapor deposition (CVD), and the like, have high thermal conductivity at room temperature, but have greatly reduced thermal conductivity in the low-temperature environment (< 100K) required by THz-QCLs to work, and the thermal conductivity of the materials has large thermal mismatch with the GaAs/A1GaAs material in the active region of the THz-QCLs, so that the secondary heat sinks have large cracking risks in low-temperature and temperature-varying tests. Therefore, the low-temperature thermal conductivity of the secondary heat sink and the existence of thermal mismatch enable the heat dissipation efficiency of the flip-chip-bonded THz-QCLs along the direction vertical to the extension plane (longitudinal direction) through the secondary heat sink not to be very high; in addition, the high-resistance silicon single crystal material has very high thermal conductivity in an environment below 100K, but is still limited by the difficulty in providing a heat dissipation channel along the lateral direction for the device.
Disclosure of Invention
In view of the above, one of the main objects of the present invention is to provide a package structure for improving heat dissipation of a high power terahertz semiconductor laser, so as to at least partially solve at least one of the above technical problems.
In order to achieve the above object, as an aspect of the present invention, there is provided a package structure for dissipating heat of a terahertz semiconductor laser, including:
a heat sink;
a first metal layer disposed on the heat sink;
a second metal layer disposed on the first metal layer;
the secondary heat sink is arranged on the second metal layer and is provided with an inverted trapezoidal groove;
a terahertz semiconductor laser comprising:
a substrate, the back of which is provided with a back metal layer;
the second doping layer is arranged on the front surface of the substrate;
the active region is of a trapezoidal structure and is arranged on the second doping layer;
the first doping layer is arranged at the top of the active region trapezoidal structure and used as an electrical injection contact layer of a laser negative electrode;
the ohmic contact layer is arranged on the first doping layer and used for realizing ohmic contact between the negative electrode and the first doping layer;
the metal waveguide layer is arranged on the first doping layer, positioned in the middle of the ohmic contact layer, and simultaneously covers the ohmic contact layer to be used as an electric injection negative electrode metal layer of the laser;
the insulating layer covers the active region, is in contact with the ohmic contact layer and the metal waveguide layer, and is used for preventing short circuit between the trapezoidal side wall of the trapezoidal active region and a negative electrode or preventing short circuit between a laser positive electrode and a laser negative electrode;
the electroplated gold layer is covered on the insulating layer and the metal waveguide layer and is used as a heat dissipation layer on one side of the secondary heat sink when the laser works;
an electrode layer covering the gold electroplating layer;
a third metal layer covering the electrode layer; the active region, the insulating layer, the electroplating gold layer, the electrode layer and the third metal layer form an inverted trapezoidal boss; the inverted trapezoidal boss is arranged in the inverted trapezoidal groove of the secondary heat sink; and
the electric isolation grooves are arranged on two sides of the inverted trapezoidal lug boss and are used for realizing electric isolation between the positive electrode and the negative electrode; and
the connecting block is arranged on the first metal layer and located on one side of the secondary heat sink, a fourth metal layer is arranged at the top of the connecting block, and the fourth metal layer is connected with the electrode layer.
Based on the technical scheme, compared with the prior art, the packaging structure for improving the heat dissipation of the high-power terahertz semiconductor laser has at least one of the following advantages:
1. the invention adopts (100) plane semi-insulating gallium arsenide material as the secondary heat sink of the terahertz semiconductor laser flip-chip bonding, has very high thermal conductivity at low temperature (less than 100K), has the highest thermal conductivity near 30K up to 1600W/(m K), is higher than the thermal conductivity of oxygen-free copper 1200W/(m K) at the same temperature, has no thermal mismatch with GaAs/AlGaAs system THz-QCLs obtained by epitaxy on (100) plane semi-insulating gallium arsenide substrate, and greatly improves the heat dissipation efficiency;
2. the invention adopts (100) surface semi-insulating gallium arsenide material as the secondary heat sink for the flip chip welding of the terahertz semiconductor laser, and utilizes H through the methods of photoetching and wet etching3PO4∶H2O2∶H2The anisotropy of crystal face corrosion rate when the etching solution with the ratio of O to 1: 10 corrodes the gallium arsenide substrate and the THz-QCLs can realize the customization of the shape and the size of the THz-QCLs light-emitting ridge and the semi-insulating gallium arsenide secondary heat sink, provide a transverse and longitudinal efficient heat dissipation channel for the laser at the same time, realize the transverse and longitudinal heat dissipation at the same time, efficiently dissipate heat from an active area, be beneficial to reducing the temperature of the active area, improve the heat dissipation efficiency when the laser works, and thus be beneficial to realizing a terahertz semiconductor laser with higher power;
3. compared with other secondary heat sink materials, the high-quality semi-insulating gallium arsenide substrate adopted by the invention has low price and is easy to obtain, so that the economic cost of the high-power terahertz semiconductor laser heat dissipation packaging structure is reduced, and the manufacturing efficiency is improved.
Drawings
FIG. 1 is a schematic structural diagram in an embodiment of the present invention;
FIG. 2 is a schematic top view of a structure in an embodiment of the invention;
FIG. 3 is a schematic perspective view of a connector block of the present invention;
fig. 4 is a heat flow distribution diagram inside the heat dissipation packaging structure of the high-power terahertz semiconductor laser in fig. 1.
Description of reference numerals:
1-heat sink; 2-a first metal layer; 3-a second metal layer; 4-a secondary heat sink; 5-a third metal layer; 6-an electrode layer; 601-positive electrode; 602-a negative electrode; 7-electroplating a gold layer; an 8-ohmic contact layer; 9-an insulating layer; 10-a first doped layer; 11-a second doped layer; 12-a metallic waveguide layer; 13-a substrate; 14-back side metal layer; 15-an active region; 16-gold wire; 17-a fourth metal layer; 18-connecting blocks; 19-electrically isolated tank.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
The invention provides a packaging structure for improving heat dissipation of a high-power terahertz semiconductor laser, which selects a semi-insulating gallium arsenide material which has high heat conductivity at low temperature (less than 100K), does not have heat mismatch with a GaAs/A1GaAs system THz-QCLs, can be patterned by photoetching and wet corrosion in shape and size as a secondary heat sink for flip chip bonding of a device, thereby realizing high heat dissipation efficiency of the laser in the transverse direction and the longitudinal direction at the same time, reducing the core temperature of an active region, and improving the output power of the THz-QCLs on the basis. The high-power terahertz semiconductor laser is a strip-shaped terahertz semiconductor laser working with continuous waves, and the single-side light-emitting power is 100-300 mW.
In order to improve the heat dissipation efficiency of the THz-QCLs and obtain the THz-QCLs with higher power, the invention provides a novel device packaging structure. The structure adopts a (100) surface semi-insulating GaAs substrate as a secondary heat sink for THz-QCLs flip-chip bonding, and the semi-insulating GaAs single crystal material has thermal conductivity at room temperatureNot high, only 45W/(m K), but very high thermal conductivity at temperatures below 100K and even lower, up to 1600W/(m K) near 30K, higher than the thermal conductivity of oxygen-free copper 1200W/(m K) at the same temperature, and more readily available and less expensive than other secondary heat sink materials. In addition, the semi-insulating GaAs single crystal material has no thermal mismatch with the GaAs/AlGaAs material of the THz-QCLs active region; more importantly, H can be utilized by a wet etching method3PO4∶H2O2∶H2And (3) realizing the graphical design of THz-QCls luminous ridges and secondary heat sink heat dissipation channels by the anisotropy of crystal face corrosion rate of the etching solution with the ratio of O to 1: 10 when etching the GaAs single crystal substrate and the THz-QCLs. Both are placed along [1-10 ]]Performing crystal orientation photoetching, and performing wet etching by using the photoresist as a mask to obtain a rim [1-10 ] with a trapezoidal cross section, a narrow upper part and a wide lower part, and a side wall and a lower etched surface forming a 45-degree inclination angle]The THz-QCLs bar-shaped luminous ridge of the crystal orientation and the cross section are in an inverted trapezoid shape, the upper part is wide and the lower part is narrow, and the side wall and the lower corrosion surface form a 135-degree dip angle along the edge of [1-10 ]]A semi-insulating gallium arsenide strip-shaped supporting groove with a crystal orientation. The shape and the size of the THz-QCLs can be complemented by the design of a photoetching plate, and during flip chip bonding, the THz-QCLs luminous ridges are aligned and nested into the semi-insulating gallium arsenide supporting grooves patterned with the positive and negative electrode areas by using a submicron chip mounter, so that the packaging of the device with the semi-insulating gallium arsenide substrate as the secondary heat sink for the THz-QCLs flip chip bonding is realized. In the packaging structure, the THz-QCLs luminous ridges have high thermal conductivity (for example, the thermal conductivity is 300-1600 Kw) at low temperature (0-100K) in the longitudinal direction and the transverse direction-1m-1) The close-fit semi-insulating gallium arsenide material without thermal mismatch is used as a heat dissipation channel, which can greatly improve the heat dissipation efficiency of the device and realize the high-power output of THz-QCLs continuous wave with the working power of more than 100mW (for example, 100 to 300 mW). In summary, the invention provides a packaging structure for improving heat dissipation of a high-power terahertz semiconductor laser, which is characterized in that the packaging structure has high thermal conductivity (for example, the thermal conductivity is 300-1600 Kw) at low temperature (less than 100K)-1m-1) Semi-insulating layer without thermal mismatch with THz-QCLs light emitting ridge and with graphical shape and sizeThe gallium arsenide material is used as a secondary heat sink for flip chip bonding of the device, and can realize high heat dissipation efficiency of the laser in the transverse direction and the longitudinal direction at the same time, so that the high-power THz-QCLs device is realized on the basis.
The invention discloses a terahertz semiconductor laser heat radiation packaging structure, which comprises:
a heat sink;
a first metal layer disposed on the heat sink;
a second metal layer disposed on the first metal layer;
the secondary heat sink is arranged on the second metal layer and is provided with an inverted trapezoidal groove;
a terahertz semiconductor laser comprising:
a substrate, the back of which is provided with a back metal layer;
the second doping layer is arranged on the front surface of the substrate;
the active region is of a trapezoidal structure and is arranged on the second doping layer;
the first doping layer is arranged at the top of the active region trapezoidal structure and used as an electrical injection contact layer of a laser negative electrode;
the ohmic contact layer is arranged on the first doping layer and used for realizing ohmic contact between the negative electrode and the first doping layer;
the metal waveguide layer is arranged on the first doping layer, is positioned in the middle of the ohmic contact layer, covers the ohmic contact layer and is used as an electric injection negative electrode metal layer of the laser;
the insulating layer covers the active region, is in contact with the ohmic contact layer and the metal waveguide layer, and is used for preventing short circuit between the trapezoidal side wall of the trapezoidal active region and a negative electrode or between a positive electrode and a negative electrode of a laser;
the electroplated gold layer is covered on the insulating layer and the metal waveguide layer and is used as a heat dissipation layer on one side of the secondary heat sink when the laser works;
an electrode layer covering the gold electroplating layer;
a third metal layer covering the electrode layer; the active region, the insulating layer, the electroplating gold layer, the electrode layer and the third metal layer form an inverted trapezoidal boss; the inverted trapezoidal boss is arranged in the inverted trapezoidal groove of the secondary heat sink; and
the electric isolation grooves are arranged on two sides of the inverted trapezoidal lug boss and are used for realizing electric isolation between the positive electrode and the negative electrode; and
the connecting block is arranged on the first metal layer and located on one side of the secondary heat sink, a fourth metal layer is arranged at the top of the connecting block, and the fourth metal layer is connected with the electrode layer.
In some embodiments of the present invention, the electrical isolation groove isolates the inverted trapezoidal boss into an inverted trapezoidal boss structure in the middle and positive electrode current injection structures on both sides, and the top metal waveguide layer of the inverted trapezoidal boss realizes negative electrode current injection;
in some embodiments of the present invention, the positive electrode current injection structure comprises:
a positive electrode disposed on the second doped layer;
an electroplated gold layer disposed on the positive electrode;
an electrode layer disposed on the gold plating layer; and
and the third metal layer is arranged on the electrode layer.
In some embodiments of the present invention, the heat sink is made of a material including copper;
in some embodiments of the invention, the heat sink has a thermal conductivity of 300 to 1200Kw at temperatures below 100K- 1m-1；
In some embodiments of the present invention, the material used for the secondary heat sink comprises (100) plane semi-insulating gallium arsenide;
in some embodiments of the present invention, the secondary heat sink has a thickness of 200 to 300 μm;
in some embodiments of the invention, the inverted trapezoidal groove has a depth of 11 to 13 μm.
In some embodiments of the present invention, the material used for the first metal layer includes indium;
in some embodiments of the invention, the first metal layer has a thickness of 4 to 6 μm;
in some embodiments of the present invention, the material used for the second metal layer includes titanium and gold;
in some embodiments of the present invention, the material used for the third metal layer includes indium;
in some embodiments of the invention, the thickness of the third metal layer is 2 to 3 μm;
in some embodiments of the present invention, the material used for the fourth metal layer includes titanium and gold;
in some embodiments of the invention, the material used for the connecting block comprises aluminum nitride ceramic.
In some embodiments of the present invention, the substrate is made of a material comprising (100) plane semi-insulating gallium arsenide;
in some embodiments of the invention, the substrate has a thickness of 300 to 500 μm.
In some embodiments of the invention, the active region comprises a coupling multiple quantum well;
in some embodiments of the invention, the active region has a thickness of 10 to 13 μm;
in some embodiments of the present invention, the doping concentration of the active region is 1 to 4 × 1016cm-3；
In some embodiments of the present invention, the material used for the first doped layer comprises gallium arsenide;
in some embodiments of the invention, the thickness of the first doped layer is 0.1 to 0.3 μm;
in some embodiments of the invention, the doping concentration of the first doping layer is 1 to 5 × 1018cm-3；
In some embodiments of the present invention, the material used for the second doped layer comprises gallium arsenide;
in some embodiments of the invention, the thickness of the second doped layer is 0.3 to 0.8 μm;
in some embodiments of the invention, the doping concentration of the second doped layer is 1 to 5 × 1018cm-3。
In some embodiments of the present invention, the material used for the insulating layer includes silicon dioxide;
in some embodiments of the invention, the insulating layer has a thickness of 400 to 500 nm;
in some embodiments of the present invention, the electrode layer is made of a material including titanium and gold;
in some embodiments of the invention, the thickness of the gold electroplating layer is 1 to 2 μm.
In some embodiments of the invention, the fourth metal layer (17) and the electrode layer (6) are connected by gold wire.
The invention also discloses a preparation method of the terahertz semiconductor laser heat dissipation packaging structure, which comprises the following steps:
preparing a first metal layer on the heat sink;
preparing a second metal layer on the first metal layer;
preparing a secondary heat sink on the second metal layer;
preparing an inverted trapezoidal groove on the secondary heat sink;
preparing a terahertz semiconductor laser, comprising:
preparing a back metal layer on the back of the substrate;
preparing a second doping layer on the front surface of the substrate;
preparing an active region with a trapezoidal structure on the second doping layer;
preparing a first doping layer on the top of the active area trapezoidal structure;
preparing an ohmic contact layer on the first doping layer;
preparing a metal waveguide layer on the first doping layer and in the middle of the ohmic contact layer;
preparing an insulating layer on the side wall of the trapezoidal structure of the active region and on the ohmic contact layer and the metal waveguide layer;
preparing an electroplating gold layer on the insulating layer and the metal waveguide layer;
preparing an electrode layer on the electroplated gold layer;
preparing a third metal layer on the electrode layer to obtain an inverted trapezoidal boss formed by the active region, the insulating layer, the electroplating gold layer, the electrode layer and the third metal layer;
preparing electric isolation grooves on two sides of the inverted trapezoidal boss;
packaging a third metal layer of the terahertz semiconductor laser in an inverted trapezoidal groove of the secondary heat sink;
preparing a connecting block on the first metal layer and on one side of the inverted trapezoidal boss;
preparing a fourth metal layer on the connecting block;
and connecting the fourth metal layer with the electrode layer to obtain the packaging structure.
In some embodiments of the present invention, the methods for preparing the active region, the first doped layer and the second doped layer all include a molecular beam epitaxy method.
In one embodiment of the present invention, a package structure for improving heat dissipation of a high-power terahertz semiconductor laser includes: a copper heat sink (heat sink) with polished surface and deposited metal on the upper surface; the secondary heat sink is a strip-shaped support groove with an inverted trapezoid cross section along the [0-11] crystal direction and is obtained by photoetching and wet etching a (100) surface semi-insulating gallium arsenide substrate, and metal is deposited on the upper surface and the lower surface of the secondary heat sink; the terahertz semiconductor laser comprises a (100) plane semi-insulating gallium arsenide substrate (namely a substrate), a lower high-doped layer (namely a second doped layer), a coupling multi-quantum well active region (namely an active region) and an upper high-doped layer (namely a first doped layer), wherein the lower high-doped layer (namely the second doped layer), the coupling multi-quantum well active region (namely the active region) and the upper high-doped layer (namely the first doped layer) are obtained by molecular beam epitaxy equipment;
the terahertz semiconductor laser material is subjected to photoetching and wet etching to obtain a strip-shaped laser resonant cavity with a trapezoidal cross section along the crystal direction of [0-11], ohmic contact is made on the upper surface of the laser resonant cavity through an electron beam evaporation and deposition metal layer, the electron beam evaporation and deposition metal layer is used as a positive electrode and a negative electrode of the laser and an upper metal waveguide (namely a metal waveguide layer), a silicon dioxide insulating layer grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) is used for isolating the positive electrode area and the negative electrode area, then gold is electroplated on the upper surface of a device to be used as a heat dissipation layer of the laser, and the terahertz semiconductor laser is obtained, the shape and the size of a light-emitting ridge are complementary with those of the secondary heat sink supporting groove, and then the terahertz semiconductor laser is packaged on the secondary heat sink through a chip mounter with submicron precision by a chip mounting method of flip chip bonding;
and the positive and negative electrodes of the terahertz semiconductor laser are led out to the aluminum nitride ceramic metal layer from gold wires by a gold wire ball welding machine.
In another embodiment of the present invention, a package structure for improving heat dissipation of a high-power terahertz semiconductor laser includes:
a copper heat sink (i.e., heat sink);
a secondary heat sink;
a terahertz semiconductor laser;
the shape and the size of the light-emitting ridge of the terahertz semiconductor laser are complementary with those of the secondary heat sink supporting groove, and then the terahertz semiconductor laser is packaged on the secondary heat sink by a sub-micron precision chip mounter through a flip chip mounting method;
an aluminum nitride ceramic block (i.e., a connection block);
sputtering metal layers (namely fourth metal layers) on the upper surface and the lower surface of the aluminum nitride ceramic block (namely connecting block), sintering the metal layers on a copper heat sink (namely heat sink), and leading out the positive and negative electrodes of the terahertz semiconductor laser to the aluminum nitride ceramic metal layers (namely fourth metal layers) through a gold wire ball welding machine;
wherein the copper heat sink (i.e. heat sink) is high-purity oxygen-free copper (e.g. purity of 99.999% -99.9999%), and has high thermal conductivity (e.g. thermal conductivity of 300-1200 Kw) at low temperature (0-100K)-1m-1) The copper heat sink is used as a heat dissipation channel at one side of the laser, the surface polishing roughness of the copper heat sink is less than 100nm, metal In is deposited on the upper surface and the lower surface by an electroplating method, and the thickness of the layer is 4-6 mu m;
wherein the secondary heat sink is composed of a (100) plane semi-insulating gallium arsenide substrate,the thickness is 200-300 μm, and the substrate [0-11] is obtained by photolithography and wet etching]Crystal orientation supporting groove, wet etching solution H3PO4∶H2O2∶H2O is 1: 10, the etching rate is 0.5 to 0.6 μm/min, and the etching depth is 11 to 13 μm. Because the semi-insulating gallium arsenide substrate is of a zinc blende crystal structure, the corrosion of each crystal face by the corrosive liquid has strong anisotropy, an inverted trapezoidal strip-shaped supporting groove with a 135-degree inclination angle on the side wall and a wide upper part and a narrow lower part can be obtained after the corrosion is finished, namely the secondary heat sink, the upper surface and the lower surface of the secondary heat sink are evaporated by electron beams to deposit metal Ti/Au with the thickness of 5nm/200nm, and then the upper surface of the secondary heat sink is evaporated by heat to deposit metal In with the thickness of 2-3 mu m on a Ti/Au metal layer;
wherein the terahertz semiconductor laser comprises:
a (100) plane semi-insulating gallium arsenide substrate (i.e., substrate) with a thickness of 300 to 500 μm;
a lower highly doped layer (i.e. second doped layer) with a doping concentration of 1-5 × 1018cm-30.3-0.8 μm thick, and is located on the semi-insulating GaAs substrate as the electrical injection contact layer of the laser positive electrode;
a coupled multiple quantum well active region (i.e. active region) with a thickness of 10-13 μm and made of periodic GaAs/Al0.15Ga0.85As coupled multiple quantum well, each period comprises an injection region, a light emitting region and an extraction region (injection region of the next period), and the average doping concentration is 1-4 × 1016em-3；
A high doped layer (i.e. first doped layer) with a doping concentration of 1-5 × 1018cm-30.1 to 0.3 μm thick as an electrical injection contact layer for the negative electrode of the laser;
the lower high doped layer (namely the second doped layer), the coupling multi-quantum well active region (namely the active region) and the upper high doped layer (namely the first doped layer) are obtained by molecular beam epitaxy equipment in an epitaxial mode; the coupled multiple quantum well active region (active region) and the upper doped layer (first doped layer) are etched by photolithography and wet method to obtain a dopant edge [0-11]]Laser resonant cavity of crystal orientation, wet etchingEtching solution selection H3PO4∶H2O2∶H2O is 1: 10, the corrosion rate is 0.5 to 0.6 mu m/min, the corrosion depth is the sum of the thicknesses of a coupling multi-quantum well active region (namely an active region) and an upper doped layer (namely a first doped layer), the two layers of single crystal materials are of a zinc blende structure, the corrosion of each crystal face by the corrosive liquid has strong anisotropy, and a regular trapezoid strip-shaped light emitting ridge with a 45-degree inclination angle on the side wall is obtained after the corrosion is finished, namely the terahertz semiconductor laser resonant cavity;
a silicon dioxide layer (i.e. an insulating layer) grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) with a thickness of 400-500nm (e.g. 450nm), and then etched by photolithography and wet etching with BOE (HF: NH) as the etching solution4OH∶H2O is 1: 6: 9), an electric injection window is opened on the positive and negative electrode area, and the rest silicon dioxide is used as the isolating layer of the positive and negative electrodes;
an ohmic contact layer, in the positive and negative electrode area of the upper surface of the resonant cavity, depositing a plurality of metal films Ge/Au/Ni/Au by electron beam evaporation, wherein the thicknesses are respectively 10-20 nm/40-50 nm/10-20 nm/200-220 nm, preferably 20nm/50nm/15nm/200nm, and the substrate temperature is set to be 70-90 ℃, preferably 80 ℃ and rotated during evaporation; then putting the metal into an annealing furnace for rapid thermal annealing, and forming ohmic contact on the interface of the metal and the highly doped semiconductor;
an electrode layer, in the above-mentioned positive and negative electrode area of resonant cavity, the Ti/Au layer of evaporation deposition of electron beam, the thickness is 5-10 nm/280-300 nm, preferably 10nm/300nm, while evaporating, the substrate temperature is set as 70-90 degrees C, preferably 80 degrees C and rotates;
an electroplating gold layer with the thickness of 1-2 μm, wherein the electrode layer is electroplated with gold and used as a heat dissipation layer on one side of the secondary heat sink when the laser works;
a back metal layer, depositing Ti/Au layer by electron beam evaporation on the back of the resonant cavity structure, the thickness is 5-10 nm/280-300 nm, preferably 10nm/300nm, when evaporating, the substrate temperature is set at 180-200 ℃, preferably 200 ℃ and rotating;
the shape and the size of the regular trapezoid resonant cavity of the terahertz semiconductor laser are complementary with those of the inverted trapezoid supporting groove of the secondary heat sink, and then the terahertz semiconductor laser is packaged on the secondary heat sink through a sub-micron precision chip mounter through a flip chip mounting method;
the upper surface and the lower surface of the aluminum nitride ceramic block (namely the connecting block) are subjected to magnetron sputtering to obtain a Ti/Au metal layer (namely a fourth metal layer), the layer thickness is 20-40 nm/800 nm-1000 nm, preferably 40nm/1000nm, then the Ti/Au metal layer is sintered on the copper heat sink (heat sink) with indium electroplating at the temperature of 180-200 ℃, preferably 200 ℃, and the anode and the cathode of the terahertz semiconductor laser are led out to the aluminum nitride ceramic metal layer (namely the fourth metal layer) from gold wires by a gold wire ball welding machine.
The technical solution of the present invention is further illustrated by the following specific embodiments in conjunction with the accompanying drawings. It should be noted that the following specific examples are given by way of illustration only, and the scope of the present invention is not limited thereto.
Referring to fig. 1, fig. 2, fig. 3 and fig. 4, the present embodiment provides a package structure for improving heat dissipation of a high-power terahertz semiconductor laser, including:
a copper heat sink (i.e. heat sink 1) with polished surface and In metal layer (i.e. first metal layer 2) deposited on the upper surface;
a secondary heat sink 4, which is a strip-shaped supporting groove along the [0-11] crystal direction obtained by photoetching and wet etching of a (100) surface semi-insulating gallium arsenide substrate, and metal Ti/Au layers 3 and 5 (namely a second metal layer 3 and a third metal layer 5) are evaporated and deposited on the upper surface and the lower surface of the secondary heat sink by electron beams;
the terahertz semiconductor laser comprises a (100) plane semi-insulating gallium arsenide substrate (substrate 13), a lower high doping layer (namely a second doping layer 11), a coupling multi-quantum well active region (namely an active region 15) and an upper high doping layer (namely a first doping layer 10), wherein the lower high doping layer (namely the second doping layer 11), the coupling multi-quantum well active region (namely the active region 15) and the upper high doping layer (namely the first doping layer 10) are obtained by molecular beam epitaxy equipment in an epitaxial mode;
carrying out photoetching and wet etching on the terahertz semiconductor laser material to obtain a strip-shaped laser resonant cavity along the [0-11] crystal direction, carrying out electron beam evaporation and deposition on the upper surface of the laser resonant cavity to obtain a metal layer Ge/Au/Ni/Au, manufacturing an ohmic contact layer 8, then carrying out electron beam evaporation and deposition on the metal layer Ti/Au as a laser positive electrode 601, a laser negative electrode 602 and a metal waveguide layer 12, isolating the positive electrode 601 and the negative electrode 602 by a silicon dioxide insulating layer (namely an insulating layer 9) grown by plasma chemical vapor deposition (PECVD), then electroplating a gold layer 7 on the upper surface of the device to be used as a heat dissipation layer of the laser, thus obtaining the terahertz semiconductor laser strip-shaped resonant cavity, wherein the shape and the size of the terahertz semiconductor laser strip-shaped resonant cavity are complementary to the shape and the size of the supporting groove of the secondary heat sink 4, then, the terahertz semiconductor laser is packaged on the secondary heat sink 4 through a sub-micron precision chip mounter by a flip chip mounting method; the active region 15, the insulating layer 9, the electrogilding layer 7, the electrode layer 6 and the third metal layer 5 form an inverted trapezoidal boss; the electrical isolation groove 19 isolates the inverted trapezoidal boss into an inverted trapezoidal boss structure in the middle and positive electrode current injection structures on two sides, negative electrode current injection is realized by the inverted trapezoidal boss top metal waveguide layer 12, and the positive electrode current injection structures sequentially comprise from top to bottom: positive electrode 601, electrogilding layer 7, electrode layer 6, third metal layer 5.
And an aluminum nitride ceramic block (i.e. the connecting block 18), wherein metal Ti/Au layers (i.e. the fourth metal layer 17) are sputtered on the upper and lower surfaces of the aluminum nitride ceramic block (i.e. the connecting block 18), and are sintered on the indium-plated copper heat sink 1, and the positive electrode 601 and the negative electrode 602 of the terahertz semiconductor laser are led out from the gold wire 16 to the aluminum nitride ceramic metal layer (i.e. the fourth metal layer 17) by a gold wire ball welder.
The above-mentioned embodiments, objects, technical solutions and advantages of the present invention are further described in detail, it should be understood that the above-mentioned embodiments are only examples of the present invention, and should not be construed as limiting the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. A terahertz semiconductor laser radiating packaging structure comprises:
a heat sink (1);
a first metal layer (2) disposed on the heat sink (1);
a second metal layer (3) disposed on the first metal layer (2);
the secondary heat sink (4) is arranged on the second metal layer (3) and is provided with an inverted trapezoidal groove;
a terahertz semiconductor laser comprising:
a substrate (13) provided with a back metal layer (14) on the back thereof;
a second doped layer (11) disposed on the front side of the substrate (13);
the active region (15) is of a trapezoidal structure and is arranged on the second doping layer (11);
the first doping layer (10) is arranged at the top of the trapezoidal structure of the active region (15) and is used as an electric injection contact layer of a laser negative electrode (602);
the ohmic contact layer (8) is arranged on the first doping layer (10) and is used for realizing ohmic contact between the negative electrode (602) and the first doping layer (10);
the metal waveguide layer (12) is arranged on the first doping layer (10), is positioned in the middle of the ohmic contact layer (8), and simultaneously covers the ohmic contact layer (8) to be used as an electric injection negative electrode metal layer of the laser;
the insulating layer (9) covers the active region (15), is in contact with the ohmic contact layer (8) and the metal waveguide layer (12) and is used for preventing short circuit between the trapezoidal side wall of the trapezoidal active region (15) and the negative electrode (602), the positive electrode (601) covers the second doping layer (11), and the two sides of the active region (15) are isolated from the insulating layer (9) on the side wall of the active region (15) through the electric isolation groove (19);
the gold electroplating layer (7) is covered on the insulating layer (9), the positive electrode (601) and the metal waveguide layer (12) and is used as a heat dissipation layer on one side of the secondary heat sink (4) when the laser works;
an electrode layer (6) covering the gold-electroplated layer (7);
a third metal layer (5) covering the electrode layer (6); the active region (15), the insulating layer (9), the electrogilding layer (7), the electrode layer (6) and the third metal layer (5) form an inverted trapezoidal boss; the inverted trapezoidal boss is attached to the inverted trapezoidal groove of the secondary heat sink (4); and
an electrical isolation groove (19), the electrical isolation groove (19) extending to the secondary heat sink (4) for achieving electrical isolation between the positive electrode (601) and the negative electrode (602); and
the connecting block (18) is arranged on the first metal layer (2) and located on one side of the secondary heat sink (4), a fourth metal layer (17) is arranged at the top of the connecting block (18), and the fourth metal layer (17) is connected with the electrode layer (6);
the material adopted by the secondary heat sink (4) comprises (100) plane semi-insulating gallium arsenide, and the terahertz semiconductor laser comprises a GaAs/AlGaAs system terahertz semiconductor laser; the electric isolation groove (19) isolates the inverted trapezoid boss into an inverted trapezoid boss structure in the middle and positive electrode current injection structures on two sides, negative electrode current injection is realized through the inverted trapezoid boss top metal waveguide layer (12), and the inverted trapezoid boss top metal waveguide layer (12) serves as a negative electrode (602).
2. The package structure of claim 1,
the heat sink (1) is made of copper;
the heat sink (1) has a thermal conductivity of 300 to 1200Kw at a temperature below 100K-1m-1；
The thickness of the secondary heat sink (4) is 200 to 300 μm;
the depth of the inverted trapezoidal groove is 11 to 13 μm.
3. The package structure of claim 1,
the material adopted by the first metal layer (2) comprises indium;
the thickness of the first metal layer (2) layer is 4-6 μm;
the second metal layer (3) is made of titanium and gold;
the material adopted by the third metal layer (5) comprises indium;
the thickness of the third metal layer (5) is 2 to 3 μm;
the fourth metal layer (17) is made of titanium and gold;
the connecting block (18) is made of aluminum nitride ceramics.
4. The package structure of claim 1,
the substrate (13) is made of a material comprising (100) plane semi-insulating gallium arsenide;
the thickness of the substrate (13) is 300 to 500 [ mu ] m.
5. The package structure of claim 1,
the active region (15) comprises a coupling multiple quantum well;
the active region (15) has a thickness of 10 to 13 μm;
the doping concentration of the active region (15) is 1 to 4 x 1016cm-3；
The material adopted by the first doped layer (10) comprises gallium arsenide;
the thickness of the first doped layer (10) is 0.1 to 0.3 μm;
the doping concentration of the first doping layer (10) is 1 to 5 multiplied by 1018cm-3；
The material adopted by the second doped layer (11) comprises gallium arsenide;
the thickness of the second doped layer (11) is 0.3 to 0.8 μm;
the doping concentration of the second doping layer (11) is 1 to 5 x 1018cm-3。
6. The package structure of claim 1,
the insulating layer (9) is made of silicon dioxide;
the thickness of the insulating layer (9) is 400 to 500 nm;
the electrode layer (6) is made of materials including titanium and gold;
the thickness of the gold-plating layer (7) is 1 to 2 μm.
7. The package structure of claim 1,
the fourth metal layer (17) is connected with the electrode layer (6) through a gold wire.
8. A preparation method of a terahertz semiconductor laser heat dissipation packaging structure is characterized by comprising the following steps:
preparing a first metal layer (2) on a heat sink (1);
preparing a second metal layer (3) on the first metal layer (2);
preparing a secondary heat sink (4) on the second metal layer (3);
preparing an inverted trapezoidal groove on the secondary heat sink (4);
preparing a terahertz semiconductor laser, comprising:
preparing a back metal layer (14) on the back of the substrate (13);
preparing a second doped layer (11) on the front side of the substrate (13);
preparing an active region (15) with a trapezoidal structure on the second doping layer (11);
preparing a first doping layer (10) on the top of the trapezoidal structure of the active region (15);
preparing an ohmic contact layer (8) on the first doped layer (10);
preparing a metallic waveguide layer (12) on the first doped layer (10) and in between the ohmic contact layers (8);
preparing an insulating layer (9) on the side wall of the trapezoidal structure of the active region (15) and on the ohmic contact layer (8) and the metallic waveguide layer (12);
preparing an electrogilding layer (7) on the insulating layer (9), the positive electrode (601) and the metallic waveguide layer (12);
preparing an electrode layer (6) on the electroplated gold layer (7);
preparing a third metal layer (5) on the electrode layer (6) to obtain an inverted trapezoidal boss formed by the active region (15), the insulating layer (9), the electrogilding layer (7), the electrode layer (6) and the third metal layer (5);
preparing electric isolation grooves (19) on two sides of the inverted trapezoid lug boss, wherein the electric isolation grooves (19) extend to the secondary heat sink (4), the positive electrode (601) covers the second doping layer (11), two sides of the active region (15) are isolated from the insulating layer (9) on the side wall of the active region (15) through the electric isolation grooves (19);
packaging a third metal layer (5) of the terahertz semiconductor laser in an inverted trapezoidal groove of the secondary heat sink (4), wherein an inverted trapezoidal boss is attached to the inverted trapezoidal groove of the secondary heat sink (4);
preparing a connecting block (18) on the first metal layer (2) and on one side of the inverted trapezoidal boss;
preparing a fourth metal layer (17) on the connecting block (18);
connecting the fourth metal layer (17) with the electrode layer (6) to obtain the packaging structure;
the material adopted by the secondary heat sink (4) comprises (100) surface semi-insulating gallium arsenide, and the terahertz semiconductor laser comprises a GaAs/A1GaAs system terahertz semiconductor laser;
the electric isolation groove (19) isolates the inverted trapezoidal boss into an inverted trapezoidal boss structure in the middle and positive electrode current injection structures on two sides, negative electrode current injection is realized through the inverted trapezoidal boss top metal waveguide layer (12), and the inverted trapezoidal boss top metal waveguide layer (12) serves as a negative electrode (602).
9. The method of claim 8, comprising:
the methods for preparing the active region (15), the first doping layer (10) and the second doping layer (11) comprise a molecular beam epitaxy method.
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| CN1503416A (en) * | 2002-11-25 | 2004-06-09 | ���ǻ�ѧ��ҵ��ʽ���� | Ridge waveguide semiconductor laser |
| CN101630812A (en) * | 2008-07-18 | 2010-01-20 | 中国科学院半导体研究所 | Fin integrated type infrared semiconductor laser structure |
| CN104067463A (en) * | 2012-03-02 | 2014-09-24 | 松下电器产业株式会社 | Semiconductor light-emitting device |
| CN105655866A (en) * | 2016-02-01 | 2016-06-08 | 中国科学院半导体研究所 | Terahertz semiconductor laser and manufacturing method thereof |
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| US20050058166A1 (en) * | 2003-09-12 | 2005-03-17 | Qing Hu | Metal waveguides for mode confinement in terahertz lasers and amplifiers |
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| CN1503416A (en) * | 2002-11-25 | 2004-06-09 | ���ǻ�ѧ��ҵ��ʽ���� | Ridge waveguide semiconductor laser |
| CN101630812A (en) * | 2008-07-18 | 2010-01-20 | 中国科学院半导体研究所 | Fin integrated type infrared semiconductor laser structure |
| CN104067463A (en) * | 2012-03-02 | 2014-09-24 | 松下电器产业株式会社 | Semiconductor light-emitting device |
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