CN104538844B - Terahertz quantum cascaded laser device architecture and preparation method thereof - Google Patents

Abstract

The invention proposes a terahertz quantum cascade laser device structure and a manufacturing method thereof, at least including: a ridge waveguide structure; the ridge waveguide structure includes a semi-insulating GaAs substrate, a GaAs buffer layer, a lower contact layer, an active region, and an upper contact layer, thermal insulation layer, upper metal layer and lower metal layer. By depositing a thermally conductive insulating layer on the side of the device and covering it with metal, a lateral heat dissipation channel for the device is provided, which has a stronger heat dissipation capability than the previous THz QCL whose side walls are not covered with metal. The flip-chip packaging method is adopted, and the supporting substrate is made of silicon and other materials with high thermal conductivity, which improves the heat dissipation capacity of the semi-insulating GaAs substrate of the normal packaging device, and has a larger electrode area, which is also conducive to the heat dissipation of the device. The new structure improves the temperature characteristics and energy efficiency of THz QCL, which is conducive to the device working in a continuous or high duty cycle pulse state; the device manufacturing method can be manufactured by standard semiconductor technology, which is suitable for industrial mass production.

Description

Device structure and fabrication method of terahertz quantum cascade laser

technical field

The invention belongs to the technical field of laser semiconductors, and relates to a terahertz quantum cascade laser, in particular to a terahertz quantum cascade laser device structure and a manufacturing method thereof.

Background technique

The terahertz (hereinafter referred to as THz, 1 THz=1012 Hz) band refers to the frequency in the electromagnetic spectrum from 100 GHz to 10 THz, and the corresponding wavelength is from 3 millimeters to 30 microns, which is between millimeter waves and infrared light. The electromagnetic spectrum region. THz radiation source is the key device for the application of THz technology. Among many THz radiation generation methods, THz quantum cascade laser (hereinafter referred to as THzQCL) is one of the main structures used for THz radiation sources due to its advantages of high energy conversion efficiency, small size, portability and easy integration. Among them, THz QCLs with good temperature characteristics and capable of working in continuous state are required in systems such as terahertz spectroscopy, communication, and imaging. Usually THz QCL works under high bias voltage and current, and most of the input electric power is finally converted into Joule heat. Joule heat that cannot be dissipated from the device to the heat sink in time will accumulate in the device, eventually causing the temperature of the active region to rise much higher than the heat sink temperature. The increase in the temperature of the active region will increase the scattering of non-radiative optical phonons from the upper energy level to the lower energy level, destroying the population inversion, suppressing the lasing of the device, and reducing the radiation efficiency. In addition, at higher temperatures, the carriers are distributed in a wider range of energy levels, which also inhibits device lasing. When the THz QCL is in the working state of continuous or high duty cycle pulse, more heat will be generated, and the heat dissipation problem will be more serious. Therefore, designing to improve the good temperature characteristics and heat dissipation capability of the device is the key to whether THz QCL can work in the state of continuous or high duty cycle pulse.

Contents of the invention

In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a terahertz quantum cascade laser device structure and its manufacturing method, which are used to solve the problems existing in the working process of the terahertz quantum cascade laser in the prior art. Problem with poor heat dissipation.

To achieve the above purpose and other related purposes, the present invention provides a terahertz quantum cascade laser device structure, the terahertz quantum cascade laser device structure at least includes: a ridge waveguide structure;

The ridge waveguide structure includes a semi-insulating GaAs substrate, a GaAs buffer layer, a lower contact layer, an active region, an upper contact layer, a thermally conductive insulating layer, an upper metal layer, and a lower metal layer; wherein the semi-insulating GaAs substrate, GaAs buffer layer, lower contact layer, active region and upper contact layer are stacked sequentially from bottom to top, the active region and the upper contact layer form a ridge structure on the lower contact layer; the upper metal layer covers On the top and both sides of the ridge structure; the thermally conductive insulating layer is located on both sides of the ridge structure, and between the upper metal layer, the ridge structure and the lower contact layer;

The lower metal layer is located on both sides of the upper metal layer and has a certain distance from the upper metal layer.

Preferably, the ridge waveguide also includes a lower electrode support structure; the lower electrode support structure is located on the lower contact layer, including an active region, an upper contact layer, and a thermally conductive insulating layer; wherein, the active region and the The upper contact layer is sequentially formed on the lower contact layer from bottom to top, and a ridge structure is formed on the lower contact layer; the thermally conductive insulating layer covers the top and both sides of the ridge structure; the The lower metal layer covers the top and both sides of the heat conducting insulating layer.

Preferably, the material of the thermally conductive insulating layer is silicon dioxide or silicon nitride.

Preferably, the active region comprises a bound state to continuous state transition structure, a resonant phonon structure or a chirped lattice structure.

Preferably, the ridge waveguide structure is a semi-insulating plasmonic waveguide structure.

Preferably, the device structure further includes a supporting substrate, on which an electrode lead-out metal layer corresponding to the upper metal layer and the lower metal layer is formed; the supporting substrate passes through the electrode The lead metal layer is welded to the upper surfaces of the upper metal layer and the lower metal layer.

Preferably, the device structure further includes an indium layer, and the indium layer is located between the upper metal layer and the lower metal layer and the electrode lead-out metal layer.

Preferably, the material of the supporting substrate is silicon.

The present invention also provides a method for manufacturing a terahertz quantum cascade laser device structure, which at least includes the following steps:

providing a half-insulating GaAs substrate, on which a buffer layer, a lower contact layer, an active region, and an upper contact layer are sequentially grown;

For the first photolithography, an etching process is used to form a ridge waveguide structure and a lower electrode support structure;

growing a thermally conductive insulating layer on the ridge waveguide structure and the lower electrode supporting structure; second photolithography, and etching the thermally conductive insulating layer through an etching process to form an upper electrode window, within the upper electrode window Forming the upper electrode metal, stripping the upper electrode formed with glue, and covering the side wall of the ridge waveguide structure;

Forming the lower electrode window in the third photolithography, forming the lower electrode metal in the lower electrode window, peeling off the adhesive to form the lower electrode, and annealing to form an ohmic contact;

A support substrate is provided, the fourth photolithography is performed, and a window is opened on the support substrate corresponding to the flip-chip welding contacts of the upper and lower electrodes, and metal is sputtered and grown in the opening, and the adhesive is peeled off to form an electrode lead-out metal layer;

Thinning the supporting substrate and the GaAs substrate to a certain thickness, cleavage, performing flip-chip packaging, and completing device fabrication.

Preferably, after forming the electrode lead-out metal layer and before performing flip-chip packaging, it also includes performing a fifth photolithography, opening a window at the electrode lead-out metal layer, evaporating the indium layer by electron beam, peeling off the tape, and using in the step of flip-chip soldering.

As mentioned above, the terahertz quantum cascade laser device structure and its manufacturing method of the present invention have the following beneficial effects: (1) In the terahertz quantum cascade laser device structure of the present invention, by depositing a thermally conductive insulating layer on the side of the device and Covering the metal, the thermally conductive insulating layer not only plays a passivation role, protects the device, but also insulates the covered metal from the active area; because the thermal conductivity of the quantum well structure in the active area is anisotropic, and the thermal conductivity is transverse The component is larger than the thermal conductivity component in the vertical direction, which has not been used in the past. The sidewall of the device is covered with metal, and the middle thermal insulation layer provides a lateral heat dissipation channel for the device, which is better than the previous THz QCL with no metal on the sidewall. more capable.

(2) Make electrode leads on the support substrate, and flip-chip solder the device on the support substrate. The support substrate is made of a material with high thermal conductivity such as silicon, which improves the heat dissipation capacity of the semi-insulating GaAs substrate of the normal package device, and can The heat generated in the active area of the device is dissipated more quickly to the heat sink under the supporting substrate. In the wire bonding package, due to the use of flip-chip welding, the electrode lead area of the supporting substrate is larger, and the electrodes can be welded with more gold wires. The external heat-conducting ceramic sheet welded on the heat sink can also make the device generate heat better. shed.

(3) The manufacturing method of the terahertz quantum cascade laser device structure of the present invention can be manufactured by standard semiconductor technology, and is suitable for industrial mass production.

Description of drawings

FIG. 1 is a schematic cross-sectional view of a ridge waveguide structure in a terahertz quantum cascade laser device structure of the present invention.

Fig. 2 is a schematic top view of the supporting substrate in the device structure of the terahertz quantum cascade laser of the present invention.

Fig. 3 is a schematic top view of the terahertz quantum cascade laser device structure flip-chip packaged according to the present invention.

Figure 4 is a schematic cross-sectional view of Figure 3 along the direction AA'.

Fig. 5 is a flow chart showing the manufacturing method of the terahertz quantum cascade laser device structure of the present invention.

Component designation description

1 upper metal layer

2 upper contact layer

3 active area

4 lower contact layer

5 GaAs buffer layer

6 Semi-insulating GaAs substrate

7 thermal insulation layer

8 lower metal layer

9 Support substrate

10 Electrode lead-out contact layer

11 Ridge waveguide structure

Detailed ways

Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

See Figures 1 through 5. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic concept of the present invention, although only the components related to the present invention are shown in the diagrams rather than the number, shape and Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual implementation, and the component layout type may also be more complicated.

Embodiment one

Please refer to FIG. 1, the present invention provides a terahertz quantum cascade laser device structure, the terahertz quantum cascade laser device structure at least includes: a ridge waveguide structure 11; the ridge waveguide structure 11 includes a semi-insulating GaAs substrate 6 , GaAs buffer layer 5, lower contact layer 4, active region 3, upper contact layer 2, thermally conductive insulating layer 7, upper metal layer 1 (ie upper electrode) and lower metal layer 8 (ie lower electrode); wherein, the The semi-insulating GaAs substrate 6, the GaAs buffer layer 5, the lower contact layer 4, the active region 3 and the upper contact layer 2 are sequentially stacked from bottom to top, and the active region 3 and the upper contact layer 2 are in the lower contact layer. A ridge structure is formed on the layer 4; the upper metal layer 1 covers the top and both sides of the ridge structure; the thermally conductive insulating layer 7 is located on both sides of the ridge structure, and is located on the upper metal layer 1 between the ridge structure and the lower contact layer 4; the lower metal layer 8 is located on both sides of the upper metal layer 1, and has a certain distance from the upper metal layer 1.

The ridge waveguide structure 11 deposits the thermally conductive insulating layer 7 on the side and covers the upper metal layer 1 on the thermally conductive insulating layer 7. The thermally conductive insulating layer 7 not only plays a passivation role, but also protects device, and insulate the covered upper metal layer 1 from the active region 3 . Since the thermal conductivity of the quantum well structure in the active region 3 is anisotropic, and the lateral component of thermal conductivity is greater than the thermal conductivity component in the vertical direction, it has not been used in the past. The layer 1, together with the heat-conducting insulating layer 7 in the middle, provides a lateral heat dissipation channel for the device, which has a stronger heat dissipation capability than the previous device structure whose side walls do not cover the upper metal layer 1 .

Specifically, the cross-sectional shape of the thermally conductive insulating layer 7 is L-shaped, and the thermally conductive insulating layer 7 is not only located between the upper metal layer 1 and the ridge structure, but also located between the upper metal layer 1 and the Between the lower contact layer 4, that is, the thermally conductive insulating layer 7 isolates the upper metal layer 1 from the lower contact layer 4, so as to ensure that the upper metal layer 1 is not directly connected to the lower contact layer 4. Contact, thereby avoiding the direct contact between the upper metal layer 1 and the lower contact layer 8, avoiding the occurrence of short circuit problems.

Specifically, the upper surface of the thermally conductive insulating layer 7 is flush with the upper surface of the upper contact layer 2 , and the lower surface of the thermally conductive insulating layer 7 is flush with the lower surface of the active region 3 .

Please refer to FIG. 2, the ridge waveguide structure 11 also includes a lower electrode support structure, the lower electrode support structure is located on both sides of the upper metal layer 1, and has a certain distance from the upper metal layer 1; The lower electrode support structure is located on the lower contact layer 4, including an active region 3, an upper contact layer 2, and a thermally conductive insulating layer 7; wherein, the active region 3 and the upper contact layer 2 are sequentially formed on the On the lower contact layer 4, a ridge structure is formed on the lower contact layer 4; the thermally conductive insulating layer 7 covers the top and both sides of the ridge structure; the lower metal layer 8 covers the The top and both sides of the thermally conductive insulating layer 7 , that is, the lower electrode support structure is located below the lower metal layer 8 .

The lower electrode support structure is a ridge structure, which can lead the lower metal layer 8 to a height close to that of the upper metal layer 1, and can ensure that the ridge waveguide structure 11 Weld flatly to the corresponding electrode leads of the supporting substrate.

The lower electrode support structure deposits the thermally conductive insulating layer 7 on the side and covers the lower metal layer 8 on the thermally conductive insulating layer 7. The thermally conductive insulating layer 7 not only plays a passivation role, but also protects the device. , and insulate the covered lower metal layer 8 from the active region 3 . Since the thermal conductivity of the quantum well structure in the active region 3 is anisotropic, and the lateral component of thermal conductivity is greater than the vertical thermal conductivity component, it has not been used in the past, and the sidewall of the lower electrode support structure Covering the lower metal layer 8, together with the thermally conductive insulating layer 7 in the middle, provides a lateral heat dissipation channel for the device, and has a stronger heat dissipation capability.

Specifically, the ridge waveguide structure 11 is a semi-insulating plasmonic waveguide structure, the semi-insulating plasmonic waveguide structure can well restrain electromagnetic waves, has good transmission characteristics, and has higher output power than THz QCL with double-sided metal waveguide structure and beam quality.

Specifically, the active region 3 includes, but is not limited to, a transition structure from a bound state to a continuous state, a resonant phonon structure, or a chirped lattice structure.

Specifically, the material of the thermally conductive insulating layer 7 includes, but is not limited to, commonly used passivation materials such as silicon dioxide or silicon nitride. The thermally conductive insulating layer 7 not only plays a passivation role, protects the device, but also insulates the covered metal from the active region 3 . Air is a poor conductor of heat, the thermal conductivity of the material of this layer is much higher than that of air, and the material of the active region 3 has a higher lateral thermal conductivity component, so compared with the previous device without passivation on the side wall, the heat in the lateral direction (in the x-axis direction) there are more heat dissipation channels, the heat dissipation capability of the device is enhanced, and the temperature characteristics of the device are improved.

Please refer to FIG. 3 , the structure of the terahertz quantum cascade laser device also includes a support substrate 9 on which electrodes corresponding to the upper metal layer 1 and the lower metal layer 8 are formed. Lead out metal layer 10 ; the support substrate 9 can be welded to the upper surfaces of the upper metal layer 1 and the lower metal layer 8 through the electrode lead out metal layer 10 .

Specifically, the material of the supporting substrate 9 includes but not limited to silicon. Preferably, in this embodiment, the material of the supporting substrate 9 is silicon. The supporting substrate 9 adopts a silicon substrate, and silicon has a higher thermal conductivity than GaAs material, which will help dissipate the heat generated by the active region 3 to the heat sink below the supporting substrate 9 .

Please refer to FIG. 4 , the ridge waveguide structure 11 is flip-chip mounted on the supporting substrate 9 through a flip-chip packaging process. At this time, the upper metal layer 1 and the lower metal layer 8 in the ridge waveguide structure 11 are in contact with the electrode lead-out metal layer 10 on the support substrate 9 . Specifically, the upper metal layer 1 and the lower metal layer 8 may be welded to the electrode lead-out metal layer 10 by a welding process, so as to realize flip-chip packaging of the device.

Using the flip-chip packaging method, the electrode lead-out metal layer 10 (i.e. electrode leads) is made on the support substrate 9, and the ridge waveguide structure 11 is flip-chip welded on the support substrate 9, and the support substrate Sheet 9 is made of materials with high thermal conductivity such as silicon, which improves the heat dissipation capability of the semi-insulating GaAs substrate of the normal packaging device, and can dissipate the heat generated by the active area of the device to the heat sink below the supporting substrate 9 more quickly. superior. During wire bonding packaging, due to the use of flip-chip bonding, the electrode lead-out metal layer 10 in the support substrate 9 has a larger area, and the electrode lead-out metal layer 10 can be welded with more gold wires. The external heat-conducting ceramic sheet on the heat sink can also dissipate the heat generated by the device better.

Specifically, the terahertz quantum cascade laser device structure further includes an indium layer (not shown), and the indium layer is located between the upper metal layer 1 and the lower metal layer 8 and the electrode lead-out metal layer 10 between. Since indium has a certain fluidity when heated, applying a certain pressure during welding can make the ridge waveguide structure 11 welded on the supporting substrate 9 flatly.

The invention can be applied to terahertz quantum cascade lasers with various active region structures, and has important application value in the fields of gas detection, radio astronomy, high-resolution spectroscopy and the like.

It can be seen that the terahertz quantum cascade laser device structure of the present invention provides a lateral heat dissipation channel for the device by depositing a thermally conductive insulating layer on the side of the device and covering the metal, which is stronger than the previous THz QCL whose side wall is not covered with metal. . The flip-chip packaging method is adopted, and the supporting substrate is made of silicon and other materials with high thermal conductivity, which improves the heat dissipation capacity of the semi-insulating GaAs substrate of the normal packaging device, and has a larger electrode area, which is also conducive to the heat dissipation of the device. The new structure improves the temperature characteristics and energy efficiency of THzQCL, which is conducive to the operation of the device in continuous or pulsed state with high duty cycle.

Embodiment two

This embodiment also provides a method for manufacturing a terahertz quantum cascade laser device structure. As shown in FIG. 5 , the method for manufacturing a terahertz quantum cascade laser device structure includes the following steps:

Step 1: growing a buffer layer, a heavily n-type doped lower contact layer, an active region, and an n-type heavily doped upper contact layer on a semi-insulating GaAs substrate;

Step 2: For the first photolithography, the ridge waveguide is etched by a dry or wet etching process to form a ridge waveguide structure and a lower electrode support structure;

Step 3: growing a thermally conductive insulating layer on the ridge waveguide structure and the lower electrode supporting structure by plasma-enhanced chemical vapor deposition (PECVD), the material of the thermally conductive insulating layer is preferably silicon, and the thermally conductive insulating layer The thickness of the upper electrode is 300nm; the second photolithography, and the thermal insulating layer is etched by a dry etching process to form an upper electrode window, and the upper electrode metal is sputtered in the upper electrode window, and the upper electrode formed by stripping with glue (i.e. the upper metal layer), and cover the sidewall of the ridge waveguide structure;

Step 4: Forming the lower electrode window by photolithography for the third time, evaporating the lower electrode metal by electron beam in the lower electrode window, peeling off the adhesive to form the lower electrode (ie, the lower metal layer), and annealing to form an ohmic contact;

Step 5: Provide a supporting substrate, the fourth photolithography, open a window on the supporting substrate corresponding to the flip-chip welding contacts of the upper and lower electrodes, grow metal by sputtering in the opening, peel off with glue, and form electrode leads metal layer;

Step 6: In the fifth photolithography, a window is opened at the metal layer where the electrode is drawn out, the indium layer is evaporated by an electron beam, and the tape is peeled off for flip-chip welding;

Step 7: Thinning the supporting substrate and the semi-insulating GaAs substrate to a certain thickness, and cleaving the supporting substrate and the structure formed on the GaAs substrate into small pieces of appropriate size, and performing flip-chip welding Encapsulate and complete the device fabrication.

In summary, the present invention proposes a terahertz quantum cascade laser device structure and its manufacturing method. In the terahertz quantum cascade laser device structure of the present invention, a thermally conductive insulating layer is deposited on the side of the device and covered with metal to conduct heat. The insulating layer not only plays a passivation role, protects the device, but also insulates the covered metal from the active area. Since the thermal conductivity of the quantum well structure in the active region is anisotropic, and the lateral component of thermal conductivity is greater than the vertical component of thermal conductivity, it has not been used in the past. The sidewall of the device is covered with metal, and the thermal conductivity in the middle The insulating layer provides a lateral heat dissipation channel for the device, and has a stronger heat dissipation capability than the previous THz QCL whose side walls are not covered with metal. Make electrode leads on the support substrate, and flip-chip solder the device on the support substrate. The support substrate is made of silicon and other materials with high thermal conductivity, which improves the heat dissipation capacity of the semi-insulating GaAs substrate of the normal packaging device, and can effectively protect the device. The heat generated in the source area is dissipated more quickly to the heat sink below the supporting substrate. In the wire bonding package, due to the use of flip-chip welding, the electrode lead area of the supporting substrate is larger, and the electrodes can be welded with more gold wires. The external heat-conducting ceramic sheet welded on the heat sink can also make the device generate heat better. shed. The manufacturing method of the terahertz quantum cascade laser device structure of the present invention can be manufactured by a standard semiconductor process, and is suitable for industrial mass production.

The above-mentioned embodiments only illustrate the principles and effects of the present invention, but are not intended to limit the present invention. Anyone skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those skilled in the art without departing from the spirit and technical ideas disclosed in the present invention should still be covered by the claims of the present invention.

Claims (8)

1. a kind of Terahertz quantum cascaded laser device architecture, which is characterized in that include at least：Ridge waveguide structure；

The ridge waveguide structure includes half-insulating GaAs substrate, GaAs buffer layers, lower contact layer, active area, upper contact layer, heat conduction Insulating layer, upper metal layer and lower metal layer；Wherein, the half-insulating GaAs substrate, GaAs buffer layers, lower contact layer, active area And upper contact layer stacks gradually from the bottom to top, the active area and the upper contact layer form ridge knot on the lower contact layer Structure；The active area includes bound state to continuous state transition structure, resonance phonon structure or chirp lattice structure；The upper metal Layer is covered in the top and both sides of the ridge structure；The thermally conductive insulating layer is located at the both sides of the ridge structure, and is located at Between the upper metal layer and the ridge structure and the lower contact layer；

The lower metal layer is located at the top of the lower contact layer, and positioned at the both sides of the upper metal layer, and with the upper gold Belonging to layer has certain spacing；

The ridge waveguide further includes lower electrode supporting structure；The lower electrode supporting structure is located on the lower contact layer, including Active area, upper contact layer and thermally conductive insulating layer；Wherein, the active area and the upper contact layer are sequentially formed in institute from the bottom to top It states on lower contact layer, and forms ridge structure on the lower contact layer；The thermally conductive insulating layer is covered in the ridge structure Top and both sides；The lower metal layer is covered in the top and both sides of the thermally conductive insulating layer.

2. Terahertz quantum cascaded laser device architecture according to claim 1, it is characterised in that：The heat conductive insulating The material of layer is silica or silicon nitride.

3. Terahertz quantum cascaded laser device architecture according to claim 1, it is characterised in that：The ridge waveguide Structure is semi-insulating plasma wave guide structure.

4. Terahertz quantum cascaded laser device architecture according to claim 1, it is characterised in that：The device architecture Further include a support substrate, electrode corresponding with the upper metal layer and the lower metal layer is formed on the support substrate Draw metal layer；The support substrate draws metal layer by the electrode and is welded in the upper metal layer and the lower metal layer Upper surface.

5. Terahertz quantum cascaded laser device architecture according to claim 4, it is characterised in that：The device architecture Further include indium layer, the indium layer is located between the upper metal layer and the lower metal layer and the electrode extraction metal layer.

6. Terahertz quantum cascaded laser device architecture according to claim 5, it is characterised in that：The support substrate Material be silicon.

7. a kind of production method of Terahertz quantum cascaded laser device architecture, which is characterized in that at least include the following steps：

A half-insulating GaAs substrate is provided, the grown buffer layer, lower contact layer, active successively on the half-insulating GaAs substrate Area, upper contact layer；

First time photoetching forms ridge waveguide structure and lower electrode supporting structure using etching technics；

Thermally conductive insulating layer is grown in the ridge waveguide structure and the lower electrode supporting structure；Second of photoetching, and pass through Etching technics etches the thermally conductive insulating layer and forms top electrode window, and upper electrode metal, band are formed in the top electrode window Glue removes the top electrode to be formed, and covers the side wall of the ridge waveguide structure；

Third time is lithographically formed lower electrode window through ray, and electrode metal under being formed in the lower electrode window through ray, Lift-off is formed down Electrode, annealing form Ohmic contact；

One support substrate is provided, four mask corresponds to upper/lower electrode flip chip bonding synapsis windowing on the support substrate, Sputtering growth metal, Lift-off in the window, form electrode and draw metal layer；

The support substrate and the GaAs substrates to certain thickness is thinned, cleavage carries out flip chip bonding encapsulation, completes device system Make.

8. the production method of Terahertz quantum cascaded laser device architecture according to claim 7, which is characterized in that It is formed after electrode extraction metal layer, before carrying out flip chip bonding encapsulation, further includes the 5th photoetching of a carry out, draw in the electrode Go out windowing at metal layer, electron beam evaporation indium layer, Lift-off, the step of being used for flip chip bonding.