CN104538844B - Terahertz quantum cascaded laser device architecture and preparation method thereof - Google Patents
Terahertz quantum cascaded laser device architecture and preparation method thereof Download PDFInfo
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Abstract
The present invention proposes a kind of Terahertz quantum cascaded laser device architecture and preparation method thereof, includes at least：Ridge waveguide structure；Ridge waveguide structure includes half-insulating GaAs substrate, GaAs buffer layers, lower contact layer, active area, upper contact layer, thermally conductive insulating layer, upper metal layer and lower metal layer.By depositing thermally conductive insulating layer in device side and covering metal, the heat dissipation channel of device transverse direction is provided, the THz QCL heat-sinking capabilities that more previous side wall does not cover metal are stronger.Using flip-chip packaged method, using high materials of thermal conductivities such as silicon, the half-insulating GaAs substrate heat-sinking capability than normal packaging improves support substrate, while having the electrode area of bigger, is also conducive to device and radiates.New construction improves the temperature characterisitic of THz QCL, energy efficiency, is conducive to device and works under continuous or high duty ratio pulse condition；Device manufacture method can be made by standard semi-conductor processes, be suitable for industrial production.
Description
Technical field
The invention belongs to laser semiconductor technical fields, are related to a kind of Terahertz quantum cascaded laser, especially relate to
And a kind of Terahertz quantum cascaded laser device architecture and preparation method thereof.
Background technology
Terahertz (hereinafter referred to as THz, 1 THz=1012 Hz) wave band refer in electromagnetic spectrum frequency from 100 GHz to 10
THz, corresponding wavelength is from 3 millimeters to 30 micron, the electromagnetic spectrum region between millimeter wave and infrared light.THz radiation source
It is the Primary Component of THz technologies application.In numerous THz radiation producing methods, THz quantum cascade laser (hereinafter referred to as THz
QCL it is that the main of THz radiation source used) due to having many advantages, such as that energy conversion efficiency is high, small, light and easy of integration
One of structure.Wherein, need there is good temperature characterisitic in the systems such as terahertz light spectroscopy, communication, imaging, can be continuous
The THz QCL of work status.Usual THz QCL are operated under high bias and electric current, and most of input electric power is ultimately converted to
Joule heat.Cannot in time shed to heat sink Joule heat from device can accumulate in the devices, eventually lead to active area temperature
It increases, significantly larger than heat sink temperature.And active area temperature increases the non-radiative optical phonon scattering that energy level can be made to lower energy level
Increase, destroy population inversion, suppression device lasing reduces radiation efficiency.In addition, at relatively high temperatures, Carrier Profile exists
It, also can suppression device lasing within the scope of broader energy level.When THz QCL are in continuous or high duty ratio pulse working condition
Under, heat generates can be more, and heat dissipation problem is more serious.Therefore, design, which improves device good temperature characteristics and heat-sinking capability, is
The key that can THz QCL work in the state of continuous or high duty ratio pulse.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of Terahertz quantum cascaded laser
Device device architecture and preparation method thereof exists during the work time for solving Terahertz quantum cascaded laser in the prior art
Poor heat radiation the problem of.
In order to achieve the above objects and other related objects, the present invention provides a kind of Terahertz quantum cascaded laser device junction
Structure, the Terahertz quantum cascaded laser device architecture include at least：Ridge waveguide structure；
The ridge waveguide structure include half-insulating GaAs substrate, GaAs buffer layers, lower contact layer, active area, upper contact layer,
Thermally conductive insulating layer, upper metal layer and lower metal layer；Wherein, the half-insulating GaAs substrate, GaAs buffer layers, lower contact layer, have
Source region and upper contact layer stack gradually from the bottom to top, and the active area and the upper contact layer form ridge on the lower contact layer
Type structure；The upper metal layer is covered in the top and both sides of the ridge structure；The thermally conductive insulating layer is located at the ridge
The both sides of structure, and between the upper metal layer and the ridge structure and the lower contact layer；
The lower metal layer is located at the both sides of the upper metal layer, and has certain spacing with the upper metal layer.
Preferably, the ridge waveguide further includes lower electrode supporting structure；The lower electrode supporting structure be located at it is described under connect
In contact layer, including active area, upper contact layer and thermally conductive insulating layer；Wherein, the active area and the upper contact layer be from the bottom to top
It is sequentially formed on the lower contact layer, and forms ridge structure on the lower contact layer；The thermally conductive insulating layer is covered in
The top and both sides of the ridge structure；The lower metal layer is covered in the top and both sides of the thermally conductive insulating layer.
Preferably, the material of the thermally conductive insulating layer is silica or silicon nitride.
Preferably, the active area includes bound state to continuous state transition structure, resonance phonon structure or chirp lattice knot
Structure.
Preferably, the ridge waveguide structure is semi-insulating plasma wave guide structure.
Preferably, the device architecture further includes a support substrate, is formed on the support substrate and the upper metal
Layer and the corresponding electrode of the lower metal layer draw metal layer；The support substrate draws metal layer welding by the electrode
In the upper surface of the upper metal layer and the lower metal layer.
Preferably, the device architecture further includes indium layer, and the indium layer is located at the upper metal layer and the lower metal layer
Between electrode extraction metal layer.
Preferably, the material of the support substrate is silicon.
The present invention also provides a kind of production methods of Terahertz quantum cascaded laser device architecture, include at least following step
Suddenly：
One half-insulating GaAs substrate is provided, on the half-insulating GaAs substrate successively grown buffer layer, lower contact layer, have
Source region, upper contact layer；
First time photoetching forms ridge waveguide structure and lower electrode supporting structure using etching technics；
Thermally conductive insulating layer is grown in the ridge waveguide structure and the lower electrode supporting structure；Second of photoetching, and
The thermally conductive insulating layer is etched by etching technics and forms top electrode window, and top electrode gold is formed in the top electrode window
Belong to, the top electrode that Lift-off is formed, and covers the side wall of the ridge waveguide structure；
Third time is lithographically formed lower electrode window through ray, electrode metal under being formed in the lower electrode window through ray, Lift-off shape
At lower electrode, annealing forms Ohmic contact；
A support substrate is provided, four mask is opened on the support substrate corresponding to upper/lower electrode flip chip bonding synapsis
Window, sputtering growth metal, Lift-off, form electrode and draw metal layer in the opening；
The support substrate and the GaAs substrates to certain thickness is thinned, cleavage carries out flip chip bonding encapsulation, completes device
It makes.
Preferably, further include a carry out the 5th time before carrying out flip chip bonding encapsulation after forming electrode and drawing metal layer
Photoetching, the electrode draw metal layer at windowing, electron beam evaporation indium layer, Lift-off, be used for flip chip bonding the step of.
As described above, the Terahertz quantum cascaded laser device architecture and preparation method thereof of the present invention, has with following
Beneficial effect：(1) by depositing thermally conductive insulating layer in device side in Terahertz quantum cascaded laser device architecture of the invention
And metal is covered, thermally conductive insulating layer both plays passivation, protects device, and the metal of covering and active area can insulate；
Since the thermal conductivity of active area quantum well structure is anisotropic, and thermal conductivity cross stream component is more than the thermal conductivity of vertical direction
Component was not used in the past, and metal is covered in device side wall, in addition intermediate thermally conductive insulating layer, provides device transverse direction
Heat dissipation channel, the THz QCL heat-sinking capabilities that more previous side wall does not cover metal are stronger.
(2) contact conductor is made on support substrate, by device flip chip bonding on support substrate, support substrate is using silicon etc.
The half-insulating GaAs substrate heat-sinking capability of the high material of thermal conductivity, more normal packaging is improved, can be active by device
Area generate heat be faster scattered to support substrate below it is heat sink on.When bonding wire encapsulates, after using flip chip bonding, branch support group
Plate electrode wiring area bigger, electrode can more weld gold thread, also may be used using heat sink external thermal conductive ceramic plate is welded on
Device generation heat preferably to be shed.
(3) Terahertz quantum cascaded laser device architecture production method of the invention can be by standard semi-conductor processes system
Make, is suitable for industrial production.
Description of the drawings
The cross section that Fig. 1 is shown as ridge waveguiding structure in the Terahertz quantum cascaded laser device architecture of the present invention shows
It is intended to.
Fig. 2 is shown as supporting the schematic top plan view of substrate in the Terahertz quantum cascaded laser device architecture of the present invention.
Fig. 3 is shown as the schematic top plan view after the Terahertz quantum cascaded laser device architecture flip-chip packaged of the present invention.
Fig. 4 is shown as cross-sectional views of the Fig. 3 along the directions AA '.
Fig. 5 is shown as the flow chart of the Terahertz quantum cascaded laser device architecture production method of the present invention.
Component label instructions
Metal layer on 1
Contact layer on 2
3 active areas
4 times contact layers
5 GaAs buffer layers
6 half-insulating GaAs substrates
7 thermally conductive insulating layer
8 lower metal layers
9 support substrates
10 electrodes draw contact layer
11 ridge waveguide structures
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this specification below by way of specific specific example
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
It please refers to Fig.1 to Fig. 5.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though package count when only display is with related component in the present invention rather than according to actual implementation in diagram
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can be a kind of random change, and its
Assembly layout kenel may also be increasingly complex.
Embodiment one
Referring to Fig. 1, the present invention provides a kind of Terahertz quantum cascaded laser device architecture, the Terahertz quantum grade
Connection laser device structure includes at least：Ridge waveguide structure 11；The ridge waveguide structure 11 include half-insulating GaAs substrate 6,
GaAs buffer layers 5, lower contact layer 4, active area 3, upper contact layer 2, thermally conductive insulating layer 7, upper metal layer 1 (i.e. top electrode) and lower gold
Belong to layer 8 (descending electrode)；Wherein, the half-insulating GaAs substrate 6, GaAs buffer layers 5, lower contact layer 4, active area 3 and on connect
Contact layer 2 stacks gradually from the bottom to top, and the active area 3 and the upper contact layer 2 form ridge knot on the lower contact layer 4
Structure；The upper metal layer 1 is covered in the top and both sides of the ridge structure；The thermally conductive insulating layer 7 is located at the ridge knot
The both sides of structure, and between the upper metal layer 1 and the ridge structure and the lower contact layer 4；The lower metal layer 8
There is certain spacing in the both sides of the upper metal layer 1, and with the upper metal layer 1.
The ridge waveguide structure 11 in side by depositing the thermally conductive insulating layer 7, and in the thermally conductive insulating layer 7
Cover the upper metal layer 1, the thermally conductive insulating layer 7 both plays passivation, protects device, and can by covering it is described on
Metal layer 1 insulate with the active area 3.Since the thermal conductivity of 3 quantum well structure of the active area is anisotropic, and thermal conductivity
Rate cross stream component is more than the thermal conductivity component of vertical direction, is not used in the past, and the upper metal is covered in device side wall
Layer 1, in addition the intermediate thermally conductive insulating layer 7, provides the heat dissipation channel of device transverse direction, more previous side wall does not cover on described
The device architecture heat-sinking capability of metal layer 1 is stronger.
Specifically, the cross-sectional shape of the thermally conductive insulating layer 7 is L-type, the thermally conductive insulating layer 7 is not only located on described
It between metal layer 1 and the ridge structure, is also located between the upper metal layer 1 and the lower contact layer 4, i.e., the described heat conduction is exhausted
Edge layer 7 will keep apart between the upper metal layer 1 and the lower contact layer 4, with ensure the upper metal layer 1 not with it is described under connect
Contact layer 4 is in direct contact, and then is avoided the upper metal layer 1 and be in direct contact with the lower contact layer 8, and short circuit problem is avoided
Occur.
Specifically, the upper surface of the thermally conductive insulating layer 7 is concordant with the upper surface of the upper contact layer 2, the heat conduction is exhausted
The lower surface flush of the lower surface of edge layer 7 and the active area 3.
Referring to Fig. 2, the ridge waveguide structure 11 further includes lower electrode supporting structure, the lower electrode supporting structure is located at
The both sides of the upper metal layer 1, and there is certain spacing with the upper metal layer 1；The lower electrode supporting structure is located at institute
It states on lower contact layer 4, including active area 3, upper contact layer 2 and thermally conductive insulating layer 7；Wherein, the active area 3 and the upper contact
Layer 2 is sequentially formed in from the bottom to top on the lower contact layer 4, and ridge structure is formed on the lower contact layer 4；The heat conduction
Insulating layer 7 is covered in the top and both sides of the ridge structure；The lower metal layer 8 is covered in the top of the thermally conductive insulating layer 7
Portion and both sides, i.e., the described lower electrode supporting structure are located at the lower section of the lower metal layer 8.
The lower electrode supporting structure is ridge structure, can be guided to the lower metal layer 8 and the upper metal layer 1
Similar height, in follow-up flip-chip packaged, it is ensured that the ridge waveguide structure 11 is entirely welded to support substrate
On corresponding contact conductor.
The lower electrode supporting structure in side by depositing the thermally conductive insulating layer 7, and in the thermally conductive insulating layer 7
Cover the lower metal layer 8, the thermally conductive insulating layer 7 both plays passivation, protects device, and can by covering it is described under
Metal layer 8 insulate with the active area 3.Since the thermal conductivity of 3 quantum well structure of the active area is anisotropic, and thermal conductivity
Rate cross stream component is more than the thermal conductivity component of vertical direction, is not used in the past, in the lower electrode supporting structure side wall
The lower metal layer 8 is covered, in addition the intermediate thermally conductive insulating layer 7, provides the heat dissipation channel of device transverse direction, heat-sinking capability
It is stronger.
Specifically, the ridge waveguide structure 11 is semi-insulating plasma wave guide structure, semi-insulating plasma wave guide structure
Electromagnetic wave can be fettered well, there is good transmission characteristic, had compared with the THz QCL of dual-surface metal waveguide structure higher
Output power and beam quality.
Specifically, the including but not limited to bound state of the active area 3 is to continuous state transition structure, resonate phonon structure or Zhou
It sings lattice structure.
It is commonly passivated specifically, the material of the thermally conductive insulating layer 7 includes but not limited to silica or silicon nitride etc.
Material.The thermally conductive insulating layer 7 both plays passivation, protects device, and can be exhausted by the metal of covering and the active area 3
Edge.Air is the non-conductor of heat, and the thermal conductivity of the layer material is more much higher than air, and the material of the active area 3 is in transverse direction
Thermal conductivity component higher, thus more previous side wall is not passivated device, heat is in transverse direction (x-axis direction) the mostly channel of heat dissipation, device
Part heat-sinking capability enhances, and improves the temperature characterisitic of device.
Referring to Fig. 3, the Terahertz quantum cascaded laser device architecture further includes a support substrate 9, the support
It is formed with electrode corresponding with the upper metal layer 1 and the lower metal layer 8 on substrate 9 and draws metal layer 10；The support
Substrate 9 can draw the upper surface that metal layer 10 is welded in the upper metal layer 1 and the lower metal layer 8 by the electrode.
Specifically, the material of the support substrate 9 includes but not limited to silicon, it is preferable that in the present embodiment, the branch support group
The material of piece 9 is silicon.The support substrate 9 uses silicon chip, silicon to have thermal conductivity more higher than GaAs material, this is beneficial to
By the heat that the active area 3 generates be scattered to it is described support substrate 9 below it is heat sink on.
Referring to Fig. 4, the ridge waveguide structure 11 by the upside-down mounting of flip-chip packaged technique on the support substrate 9.This
When, the upper metal layer 1 and the lower metal layer 8 in the ridge waveguide structure 11 with it is described on the support substrate 9
Electrode is drawn metal layer 10 and is connected.Specifically, welding procedure may be used by the upper metal layer 1 and the lower metal layer
8, which are soldered to the electrode, draws on metal layer 10, to realize the flip-chip packaged of device.
Using flip-chip packaged method, electrode extraction metal layer 10 (i.e. contact conductor) is made on the support substrate 9, it will
11 flip chip bonding of ridge waveguide structure is on the support substrate 9, and the support substrate 9 is using high materials of thermal conductivities such as silicon
Material, the half-insulating GaAs substrate heat-sinking capability of more normal packaging are improved, the heat that can generate device active region
Faster be scattered to it is described support substrate 9 below it is heat sink on.When bonding wire encapsulates, after using flip chip bonding, the support substrate 9
In the electrode draw 10 area bigger of metal layer, the electrode, which draws metal layer 10, can more weld gold thread, utilize
Being welded on heat sink external thermal conductive ceramic plate can also preferably shed device generation heat.
Specifically, the Terahertz quantum cascaded laser device architecture further includes indium layer (not shown), the indium layer position
Between the upper metal layer 1 and the lower metal layer 8 and the electrode draw metal layer 10.Since when heated, indium has
Certain fluidity, applying certain pressure when welding can make the ridge waveguide structure 11 entirely be welded on the branch support group
On piece 9.
Present invention could apply to the Terahertz quantum cascaded lasers of various active area structures, in gas detection, radio
There is important application value on the fields such as astronomy, high-resolution spectroscopy.
As can be seen that the Terahertz quantum cascaded laser device architecture of the present invention is exhausted by depositing heat conduction in device side
Edge layer simultaneously covers metal, provides the heat dissipation channel of device transverse direction, and more previous side wall does not cover the THz QCL heat-sinking capabilities of metal
It is stronger.Using flip-chip packaged method, support substrate is more semi-insulating than normal packaging using high materials of thermal conductivities such as silicon
GaAs substrate heat-sinking capabilities improve, while having the electrode area of bigger, are also conducive to device and radiate.New construction improves THz
Temperature characterisitic, the energy efficiency of QCL is conducive to device and works under continuous or high duty ratio pulse condition.
Embodiment two
The present embodiment also provides a kind of production method of Terahertz quantum cascaded laser device architecture, as shown in figure 5, institute
The production method for stating Terahertz quantum cascaded laser device architecture includes the following steps：
Step 1：Contact layer, active area, N-shaped are heavily doped under grown buffer layer, N-shaped heavy doping on half-insulating GaAs substrate
Miscellaneous upper contact layer；
Step 2：First time photoetching, using dry or wet etch technique etch ridge waveguide, formed ridged waveguide structure and
Lower electrode supporting structure；
Step 3：The chemical gas of using plasma enhancing in the ridge waveguide structure and the lower electrode supporting structure
Phase sedimentation (PECVD) grows thermally conductive insulating layer, and the material of the thermally conductive insulating layer is preferably silicon, the thickness of the thermally conductive insulating layer
Degree is 300nm；Second of photoetching, and the thermally conductive insulating layer is etched by dry etch process and forms top electrode window, in institute
It states and sputters upper electrode metal in top electrode window, the top electrode (i.e. upper metal layers) that Lift-off is formed, and cover the ridge
The side wall of type waveguiding structure；
Step 4：Third time is lithographically formed lower electrode window through ray, the electrode gold under electron beam evaporation in the lower electrode window through ray
Belong to, Lift-off forms lower electrode (i.e. lower metal layer), and annealing forms Ohmic contact；
Step 5：A support substrate is provided, four mask corresponds to upper/lower electrode flip chip bonding on the support substrate
Synapsis windowing, sputtering growth metal, Lift-off, form electrode and draw metal layer in the opening；
Step 6：5th photoetching draws windowing at metal layer, electron beam evaporation indium layer in the electrode, and band glue is shelled
From for flip chip bonding；
Step 7：The support substrate and the half-insulating GaAs substrate is thinned to certain thickness, and by the branch support group
Piece and the structure being formed on the GaAs substrates are cleaved into the small pieces of appropriate size, carry out flip chip bonding encapsulation, complete device system
Make.
In conclusion the present invention proposes a kind of Terahertz quantum cascaded laser device architecture and preparation method thereof, this
By depositing thermally conductive insulating layer in device side and covering metal in the Terahertz quantum cascaded laser device architecture of invention, lead
Thermal insulation layer both plays passivation, protects device, and the metal of covering and active area can insulate.Due to active area quantum
The thermal conductivity of well structure is anisotropic, and thermal conductivity cross stream component is more than the thermal conductivity component of vertical direction, in the past not
It is used, metal is covered in device side wall, in addition intermediate thermally conductive insulating layer, provides the heat dissipation channel of device transverse direction, compared with
The THz QCL heat-sinking capabilities that previous side wall does not cover metal are stronger.Contact conductor is made on support substrate, by device flip chip bonding
On support substrate, support substrate is dissipated using the high materials of thermal conductivities such as silicon, the half-insulating GaAs substrate of more normal packaging
Thermal energy power is improved, can by device active region generate heat faster be scattered to support substrate below it is heat sink on.In bonding wire
When encapsulation, due to using after flip chip bonding, supporting substrate electrod wiring area bigger, electrode that can more weld gold thread, utilize
Being welded on heat sink external thermal conductive ceramic plate can also preferably shed device generation heat.The Terahertz quantum grade of the present invention
Connection laser device construction manufacturing method can be made by standard semi-conductor processes, be suitable for industrial production.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology can all carry out modifications and changes to above-described embodiment without violating the spirit and scope of the present invention.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should by the present invention claim be covered.
Claims (8)
1. a kind of Terahertz quantum cascaded laser device architecture, which is characterized in that include at least：Ridge waveguide structure；
The ridge waveguide structure includes half-insulating GaAs substrate, GaAs buffer layers, lower contact layer, active area, upper contact layer, heat conduction
Insulating layer, upper metal layer and lower metal layer；Wherein, the half-insulating GaAs substrate, GaAs buffer layers, lower contact layer, active area
And upper contact layer stacks gradually from the bottom to top, the active area and the upper contact layer form ridge knot on the lower contact layer
Structure；The active area includes bound state to continuous state transition structure, resonance phonon structure or chirp lattice structure；The upper metal
Layer is covered in the top and both sides of the ridge structure；The thermally conductive insulating layer is located at the both sides of the ridge structure, and is located at
Between the upper metal layer and the ridge structure and the lower contact layer；
The lower metal layer is located at the top of the lower contact layer, and positioned at the both sides of the upper metal layer, and with the upper gold
Belonging to layer has certain spacing；
The ridge waveguide further includes lower electrode supporting structure；The lower electrode supporting structure is located on the lower contact layer, including
Active area, upper contact layer and thermally conductive insulating layer；Wherein, the active area and the upper contact layer are sequentially formed in institute from the bottom to top
It states on lower contact layer, and forms ridge structure on the lower contact layer；The thermally conductive insulating layer is covered in the ridge structure
Top and both sides；The lower metal layer is covered in the top and both sides of the thermally conductive insulating layer.
2. Terahertz quantum cascaded laser device architecture according to claim 1, it is characterised in that：The heat conductive insulating
The material of layer is silica or silicon nitride.
3. Terahertz quantum cascaded laser device architecture according to claim 1, it is characterised in that：The ridge waveguide
Structure is semi-insulating plasma wave guide structure.
4. Terahertz quantum cascaded laser device architecture according to claim 1, it is characterised in that：The device architecture
Further include a support substrate, electrode corresponding with the upper metal layer and the lower metal layer is formed on the support substrate
Draw metal layer；The support substrate draws metal layer by the electrode and is welded in the upper metal layer and the lower metal layer
Upper surface.
5. Terahertz quantum cascaded laser device architecture according to claim 4, it is characterised in that：The device architecture
Further include indium layer, the indium layer is located between the upper metal layer and the lower metal layer and the electrode extraction metal layer.
6. Terahertz quantum cascaded laser device architecture according to claim 5, it is characterised in that：The support substrate
Material be silicon.
7. a kind of production method of Terahertz quantum cascaded laser device architecture, which is characterized in that at least include the following steps：
A half-insulating GaAs substrate is provided, the grown buffer layer, lower contact layer, active successively on the half-insulating GaAs substrate
Area, upper contact layer；
First time photoetching forms ridge waveguide structure and lower electrode supporting structure using etching technics；
Thermally conductive insulating layer is grown in the ridge waveguide structure and the lower electrode supporting structure；Second of photoetching, and pass through
Etching technics etches the thermally conductive insulating layer and forms top electrode window, and upper electrode metal, band are formed in the top electrode window
Glue removes the top electrode to be formed, and covers the side wall of the ridge waveguide structure；
Third time is lithographically formed lower electrode window through ray, and electrode metal under being formed in the lower electrode window through ray, Lift-off is formed down
Electrode, annealing form Ohmic contact；
One support substrate is provided, four mask corresponds to upper/lower electrode flip chip bonding synapsis windowing on the support substrate,
Sputtering growth metal, Lift-off in the window, form electrode and draw metal layer；
The support substrate and the GaAs substrates to certain thickness is thinned, cleavage carries out flip chip bonding encapsulation, completes device system
Make.
8. the production method of Terahertz quantum cascaded laser device architecture according to claim 7, which is characterized in that
It is formed after electrode extraction metal layer, before carrying out flip chip bonding encapsulation, further includes the 5th photoetching of a carry out, draw in the electrode
Go out windowing at metal layer, electron beam evaporation indium layer, Lift-off, the step of being used for flip chip bonding.
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| CN104767122B (en) * | 2015-04-23 | 2018-07-31 | 中国科学院上海微系统与信息技术研究所 | The device architecture and production method of single mode is tunable Terahertz quantum cascaded laser |
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| CN105655866B (en) * | 2016-02-01 | 2018-11-27 | 中国科学院半导体研究所 | A kind of Terahertz semiconductor laser and its manufacturing method |
| CN105576501A (en) * | 2016-03-03 | 2016-05-11 | 中国科学院上海微系统与信息技术研究所 | Device and method for mode modulation of terahertz quantum cascade laser device |
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| CN110904412B (en) * | 2019-12-16 | 2021-11-30 | 中国工程物理研究院激光聚变研究中心 | Method for improving heat dissipation and output power of terahertz device |
| CN113113838B (en) * | 2021-03-22 | 2022-12-23 | 武汉华工正源光子技术有限公司 | Integrated laser device and preparation method thereof |
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| JP2001102673A (en) * | 1999-09-28 | 2001-04-13 | Toyoda Gosei Co Ltd | Iii nitride compound semiconductor laser diode |
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