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CN112449490B - Thin film circuit structure - Google Patents

Thin film circuit structure Download PDF

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Publication number
CN112449490B
CN112449490B CN201910815038.7A CN201910815038A CN112449490B CN 112449490 B CN112449490 B CN 112449490B CN 201910815038 A CN201910815038 A CN 201910815038A CN 112449490 B CN112449490 B CN 112449490B
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CN
China
Prior art keywords
circuit
thin film
silver paste
conductive silver
film substrate
Prior art date
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Expired - Fee Related
Application number
CN201910815038.7A
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Chinese (zh)
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CN112449490A (en
Inventor
陈柏安
潘锦松
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Primax Electronics Ltd
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Primax Electronics Ltd
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Priority to CN201910815038.7A priority Critical patent/CN112449490B/en
Publication of CN112449490A publication Critical patent/CN112449490A/en
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Publication of CN112449490B publication Critical patent/CN112449490B/en
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/16Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/167Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed resistors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0302Properties and characteristics in general
    • H05K2201/0317Thin film conductor layer; Thin film passive component

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Abstract

The invention provides a film circuit structure, which comprises a first film substrate and a first circuit layer. The first circuit layer is configured on the first film substrate. The first circuit layer comprises a first conductive silver paste and a second conductive silver paste. The first conductive silver paste has a first resistance value. The second conductive silver paste has a second resistance value, and the first resistance value is 10 times to 15 times of the second resistance value.

Description

Thin film circuit structure
Technical Field
The invention relates to the field of input devices, in particular to a film circuit structure for a keyboard device.
Background
With the development of technology, the electronic devices are greatly developed to bring convenience to human life, and therefore it is an important issue how to make the operations of the electronic devices more humanized. Common input devices for electronic devices include mouse devices, keyboard devices, and trackball devices, wherein the keyboard devices allow users to directly input characters and symbols into a computer, and are therefore highly appreciated.
Most of the known keyboard devices include a bottom plate, a film circuit board, a scissors-type connecting element, a key cap, and an elastic element, wherein the scissors-type connecting element is connected between the bottom plate and the key cap. For a thin film circuit board, it is usually made of three films, which are from top to bottom, such as an upper film layer, an insulating layer and a lower film layer. According to the known manufacturing process of the thin film circuit board, circuit patterns are printed on an upper thin film layer and a lower thin film layer respectively, and then the upper thin film layer, the spacing layer and the lower thin film layer are combined.
The circuit patterns on the upper thin film layer and the lower thin film layer are printed with a low-impedance silver paste circuit, and then are matched with a second high-impedance carbon ink circuit to increase the impedance value, so that the adjustment of the equivalent resistance value is realized, and the requirement of preventing ghost keys is met by matching with the circuit function. However, the silver paste and the carbon ink have a problem of mutual adhesion when the two printing materials are printed in separate printing, and the silver paste and the carbon ink are adhered to each other, so that the impedance value is instantly and rapidly increased, the batch printing quality is not easy to control, and the product reject ratio is increased, and the manufacturing cost is directly increased. Therefore, how to improve the above problems is the focus of attention of those skilled in the art.
Disclosure of Invention
One objective of the present invention is to provide a thin film circuit structure, in which a circuit layer is formed by conductive silver paste, and the circuit layer has high impedance conductive silver paste and low impedance conductive silver paste simultaneously by adjusting silver metal content of the conductive silver paste.
Other objects and advantages of the present invention will be further understood from the technical features disclosed in the present invention.
To achieve one or a part of or all of the above or other objects, the present invention provides a thin film circuit structure, which includes a first thin film substrate and a first circuit layer. The first circuit layer is configured on the first film substrate. The first circuit layer comprises a first conductive silver paste and a second conductive silver paste. The first conductive silver paste has a first resistance value. The second conductive silver paste has a second resistance value, and the first resistance value is 10 times to 15 times of the second resistance value.
In an embodiment of the invention, the first impedance value is between 2000 ohms and 6000 ohms, and the second impedance value is between 200 ohms and 450 ohms.
In an embodiment of the invention, the first conductive silver paste has a first silver metal content, the second conductive silver paste has a second silver metal content, and the second silver metal content is greater than the first silver metal content.
In an embodiment of the invention, the first silver content of the first conductive silver paste is between 38% by weight and 48% by weight, and the second silver content of the second conductive silver paste is between 50% by weight and 60% by weight.
In an embodiment of the invention, the thin film circuit structure further includes a second thin film substrate, an insulating isolation substrate, and a second circuit layer. The second film substrate is disposed opposite to the first film substrate. The insulating isolation substrate is arranged between the first thin film substrate and the second thin film substrate. The second circuit layer is configured on the second film substrate and positioned between the second film substrate and the first circuit layer, and the second circuit layer comprises first conductive silver paste and second conductive silver paste.
In an embodiment of the invention, the insulating isolation substrate has at least one through hole for the first circuit layer and the second circuit layer to pass through and electrically connect to each other.
In an embodiment of the invention, the first film substrate and the second film substrate both adopt a polyester film as a base material, and the film circuit structure can be configured in the keyboard module.
In an embodiment of the invention, the first circuit layer includes a main circuit and a lead-out circuit connected to each other, the first film substrate includes a first region and a second region adjacent to the first region, the main circuit is located in the first region, and the lead-out circuit is located in the second region.
In an embodiment of the invention, the main circuit and the lead-out circuit are both completed by the first conductive silver paste, and a connection portion of the main circuit and the lead-out circuit has a bent portion completed by the second conductive silver paste.
In an embodiment of the invention, the main body circuit includes at least one jumper portion, and the at least one jumper portion is completed by the second conductive silver paste.
The circuit layers (the first circuit layer and the second circuit layer) of the film circuit structure are all completed by conductive silver paste, the purpose of simultaneously having high-impedance conductive silver paste and low-impedance conductive silver paste in the circuit layers is realized by adjusting the silver metal content of the conductive silver paste, and the effect of preventing ghost keys is achieved by the conductive silver pastes with different silver metal contents and matching with the circuit function. Furthermore, since the circuit layer of the thin film circuit structure of the embodiment of the invention is completed by only one conductive material, the problem of steep rise of impedance caused by mutual adhesion of two conductive materials in the prior art is avoided, so that the quality of batch printing of the circuit layer of the thin film circuit structure of the embodiment of the invention is stable and easy to control, thereby improving the production yield and reducing the production cost.
In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
FIG. 1 is a schematic cross-sectional view of a thin film circuit structure according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a circuit pattern of the thin film circuit structure shown in FIG. 1 applied to a keyboard module;
fig. 3 is a partially enlarged schematic view of the circuit pattern shown in fig. 2.
The reference numbers are as follows:
1: thin film circuit structure
11: first film substrate
12: second film substrate
13: insulating isolation substrate
14: first circuit layer
15: second circuit layer
130: perforation
140: main circuit
141: lead-out line
142: a bent part
143: jumper line
R1: first region
R2: second region
Detailed Description
Please refer to fig. 1, which is a schematic cross-sectional view of a thin film circuit structure according to an embodiment of the present invention. As shown in fig. 1, the thin film circuit structure 1 of the present embodiment includes a first thin film substrate 11, a second thin film substrate 12, an insulating isolation substrate 13, a first circuit layer 14, and a second circuit layer 15. The first thin film substrate 12 and the second thin film substrate 12 are disposed opposite to each other. The insulating isolation substrate 13 is disposed between the first thin film substrate 11 and the second thin film substrate 12. The first circuit layer 14 is disposed on the first film substrate 11 and located between the first film substrate 11 and the second circuit layer 15. The second circuit layer 15 is disposed on the second film substrate 12 and located between the second film substrate 12 and the first circuit layer 14. The first circuit layer 14 and the second circuit layer 15 respectively include a first conductive silver paste and a second conductive silver paste, in this embodiment, the first conductive silver paste has a first impedance value, the second conductive silver paste has a second impedance value, and the first impedance value is 10 times to 15 times the second impedance value, for example, the first impedance value is, for example, between 2000 ohms and 6000 ohms, and the second impedance value is, for example, between 200 ohms and 450 ohms, but the present invention is not limited thereto, and the first impedance value and the second impedance value may be adjusted according to the requirement of the actual situation under the condition that the first impedance value is 10 times to 15 times the second impedance value.
It should be noted that, in the embodiment, the first film substrate 11 and the second film substrate 12 are made of, for example, a polyester film (PET) as a base material, but the invention is not limited thereto. In the present embodiment, the first circuit layer 14 and the second circuit layer 15 are formed on the surfaces of the first thin film substrate 11 and the second thin film substrate 12, respectively, according to a predetermined circuit pattern, for example, by printing, but the invention is not limited thereto. The film circuit structure 1 of the present embodiment can be configured to be an external keyboard (for example, a keyboard with a PS2 interface or a keyboard with a USB interface) used in a desktop computer or a built-in keyboard used in a notebook computer or a laptop computer, for example, but the present invention is not limited thereto, that is, the concept of the film circuit structure 1 of the present invention can be applied to any electronic product using the film circuit structure 1 as a signal input interface.
Specifically, the film circuit structure 1 of the present embodiment is disposed under a plurality of key assemblies (not shown) in the keyboard module. Generally, the key assembly includes key caps, a supporting structure, an elastic member, and other elements, and the connection relationship between these elements is not described herein. The first circuit layer 14 on the first film substrate 11 of the film wire electrical structure 1 may form a plurality of switch circuits, and the switch circuits respectively correspond to the key assemblies. The film circuit structure 1 further includes a plurality of conductive contacts (not shown) disposed on the second circuit layer 15 of the second film substrate 12, for example, and the conductive contacts also correspond to the key assemblies, respectively. These contacts are respectively in contact with the switch circuit through corresponding through holes 130 on the insulating isolation substrate 13. Specifically, when the key cap of the key assembly is not pressed, the conductive contacts on the second film substrate 12 and the switch circuit on the first film substrate 11 are separated from the insulating isolation substrate 13 at two sides and electrically separated. When the key cap is pressed to move toward the film circuit structure 1, the key cap directly or indirectly pushes the second film substrate 12 to partially enter the through hole 130 of the insulating isolation substrate 13, so that the conductive contact on the second film substrate 12 contacts the switch circuit on the first film substrate 11 through the through hole 130 of the insulating isolation substrate 13. Therefore, the switch circuit generates a trigger signal corresponding to the pressed key assembly.
It should be noted that the thin film circuit structure 1 of the present embodiment is a three-layer thin film circuit structure 1 composed of a first thin film substrate 11, a second thin film substrate 12 and an insulating isolation substrate 13, but the present invention is not limited thereto, and in other embodiments, the circuit layer structure completed by the first conductive silver paste with a high impedance value and the second conductive silver paste with a low impedance value may also be applied to a two-layer thin film circuit structure, a folded thin film circuit structure or a single-layer thin film circuit structure.
The conductive silver paste of the thin film circuit structure according to the embodiment of the invention is further described below.
In the present embodiment, the first conductive silver paste and the second conductive silver paste for completing the first circuit layer 11 and the second circuit layer 12 are silver pastes, respectively, and the first conductive silver paste and the second conductive silver paste have different silver metal contents, specifically, the first conductive silver paste has a first silver metal content, the second conductive silver paste has a second silver metal content, and the second silver metal content of the second conductive silver paste is greater than the first silver metal content of the first conductive silver paste, that is, the first circuit layer 11 and the second circuit layer 12 of the present invention are both completed by conductive silver pastes, and the first silver metal content of the first conductive silver paste is between 38% by weight and 48% by weight by adjusting the silver metal content of the conductive silver paste to achieve conductive silver pastes having high impedance and low impedance, respectively, and in order to achieve that the first impedance value of the first conductive silver paste is 10 times to 15 times the second impedance value of the second conductive silver paste, the second silver metal content of the second conductive silver paste is between 50% and 60% by weight. The anti-ghost-key effect is achieved by the conductive silver paste with different silver metal contents and matching with the circuit function. It should be noted that the first silver content of the first conductive silver paste is between 38% by weight and 48% by weight, which is only one embodiment of the present invention, and in a preferred embodiment, the first silver content of the first conductive silver paste can be adjusted to be between 40% by weight and 44% by weight; the second silver content of the second conductive silver paste is between 50% and 60% by weight, which is only one embodiment of the present invention, and in a preferred embodiment, the second silver content of the second conductive silver paste can be adjusted to be between 54% and 56% by weight.
Referring to fig. 2 and 3, fig. 2 is a schematic diagram of a circuit pattern of the thin film circuit structure shown in fig. 1 applied to a keyboard module. Fig. 3 is a partially enlarged schematic view of the circuit pattern shown in fig. 2. It should be noted that fig. 2 includes a plurality of thin film circuit structures 1 as shown in fig. 1, and the circuit patterns shown in fig. 2 and fig. 3 are illustrated by taking the circuit pattern printed on the first circuit layer 14 on the first thin film substrate 11 as an example, that is, fig. 2 and fig. 3 are schematic top views of the first circuit layer 14. As shown in fig. 2 and fig. 3, the first circuit layer 14 of the thin film circuit structure 1 of the present embodiment includes a main circuit 140 and a lead-out circuit 141 connected to each other. The first thin film substrate 11 includes a first region R1 and a second region R2 adjacent to each other with respect to the first region R1. The main wiring 140 of the first wiring layer 14 is located in the first region R1 of the first thin film substrate 11, and the lead-out wiring 141 of the first wiring layer 14 is located in the second region R2 of the first thin film substrate 11. In the embodiment, the main circuit 140 and the lead-out circuit 141 of the first circuit layer 14 are both made of the first conductive silver paste, that is, the main circuit 140 and the lead-out circuit 141 are made of the conductive silver paste with a high impedance value (for example, between 2000 ohms and 6000 ohms), in addition, the connection portion between the main circuit 140 and the lead-out circuit 141 has a bent portion 142, and the bent portion 142 is made of the second conductive silver paste, that is, the bent portion 142 between the main circuit 140 and the lead-out circuit 141 is made of the conductive silver paste with a low impedance value (between 200 ohms and 450 ohms). Furthermore, the main circuit 140 of the first circuit layer 14 of the present embodiment includes at least one jumper portion 143 (as shown in fig. 3), and the jumper portion 143 of the main circuit 140 is completed by a second conductive silver paste, that is, the jumper portion 143 is completed by a conductive silver paste with a low impedance value (between 250 ohms and 450 ohms).
As can be seen from the above, most of the circuit traces (the main circuit 140 and the lead-out circuit 141) of the circuit layer (the first circuit layer 14 or the second circuit layer 15) of the thin film circuit structure 1 of the present embodiment are formed by the first conductive silver paste with high impedance value, and the second conductive silver paste with low impedance value is used at the bent portion of the circuit trace (e.g. the bent portion between the main circuit 140 and the lead-out circuit 141) and the position of the printed jumper (e.g. the jumper 143), that is, most of the circuit layers of the thin film circuit structure 1 of the present invention are formed by the first conductive silver paste with high impedance value, and then a small portion of the second conductive silver paste with low impedance value is formed at the bent portion of the circuit trace or the position of the printed jumper, so as to adjust the required low resistance value, compared with the circuit pattern of the prior art, the resistance value is adjusted by the conductive material of the two different materials of the anti-silver paste circuit and the high-impedance carbon ink circuit, the film circuit structure 1 of the invention has the advantages of improved production yield and low production cost.
In summary, the circuit layers (the first circuit layer and the second circuit layer) of the thin film circuit structure in the embodiment of the invention are all completed by conductive silver paste, the purpose of simultaneously having high-impedance conductive silver paste and low-impedance conductive silver paste in the circuit layers is achieved by adjusting the silver metal content of the conductive silver paste, and the effect of preventing ghost keys is achieved by the conductive silver pastes with different silver metal contents and matching with the circuit function. Moreover, since the circuit layer of the thin film circuit structure of the embodiment of the invention is completed by only one conductive material (i.e., conductive silver paste), the problem of steep rise of impedance caused by mutual adhesion of two conductive materials in the prior art is not generated, so that the quality of batch printing of the circuit layer of the thin film circuit structure of the embodiment of the invention is stable and easy to control, thereby improving the production yield and reducing the production cost.
However, the above description is only a preferred embodiment of the present invention, and the scope of the present invention should not be limited thereby, and all the simple equivalent changes and modifications made by the claims and the description of the present invention are still within the scope of the present invention. Moreover, not all objects or advantages or features disclosed herein are necessarily achieved by any one embodiment or claim of the invention. In addition, the abstract section and the title are provided for assisting the search of patent documents and are not intended to limit the scope of the present invention. Furthermore, the terms "first," "second," and the like in the description or in the claims are used only for naming elements (elements) or distinguishing different embodiments or ranges, and are not used for limiting the upper limit or the lower limit on the number of elements.

Claims (8)

1. A thin film wiring structure comprising:
a first thin film substrate; and
a first circuit layer disposed on the first thin film substrate, the first circuit layer comprising:
a first conductive silver paste having a first impedance value, the first conductive silver paste having a first silver metal content; and
a second conductive silver paste having a second impedance value, the second conductive silver paste having a second silver metal content greater than the first silver metal content; wherein the first silver metal content of the first conductive silver paste is between 38% and 48% by weight, the second silver metal content of the second conductive silver paste is between 50% and 60% by weight, and the first impedance value is 10 times to 15 times the second impedance value.
2. The thin film wire structure of claim 1, wherein the first impedance value is between 2000 ohms and 6000 ohms, and the second impedance value is between 200 ohms and 450 ohms.
3. The thin film wire structure of claim 1, further comprising:
a second thin film substrate disposed opposite to the first thin film substrate;
an insulating isolation substrate disposed between the first thin film substrate and the second thin film substrate; and
and the second circuit layer is configured on the second film substrate and positioned between the second film substrate and the first circuit layer, and comprises the first conductive silver paste and the second conductive silver paste.
4. The thin film circuit structure of claim 3, wherein the insulating isolation substrate has at least one through hole for the first circuit layer and the second circuit layer to pass through and electrically connect to each other.
5. The film circuit structure as claimed in claim 3, wherein the first film substrate and the second film substrate are made of polyester film, and the film circuit structure can be disposed in a keyboard module.
6. The thin film circuit structure of claim 1, wherein the first circuit layer comprises a main circuit and a lead-out circuit connected to each other, the first thin film substrate comprises a first region and a second region adjacent to the first region, the main circuit is located in the first region, and the lead-out circuit is located in the second region.
7. The film circuit structure as claimed in claim 6, wherein the main circuit and the lead-out circuit are both made of the first conductive silver paste, and a bent portion is formed at a connection portion of the main circuit and the lead-out circuit, the bent portion being made of the second conductive silver paste.
8. The thin film circuit structure of claim 6, wherein the main circuit comprises at least one jumper portion completed by the second conductive silver paste.
CN201910815038.7A 2019-08-30 2019-08-30 Thin film circuit structure Expired - Fee Related CN112449490B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910815038.7A CN112449490B (en) 2019-08-30 2019-08-30 Thin film circuit structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910815038.7A CN112449490B (en) 2019-08-30 2019-08-30 Thin film circuit structure

Publications (2)

Publication Number Publication Date
CN112449490A CN112449490A (en) 2021-03-05
CN112449490B true CN112449490B (en) 2022-04-01

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201310279A (en) * 2011-08-17 2013-03-01 Tianjin Funa Yuanchuang Technology Co Ltd Touch keyboard and method for making the same
TWM518331U (en) * 2015-07-16 2016-03-01 許銘案 Device having photosensitive ag paste wire

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWM259963U (en) * 2003-12-26 2005-03-21 Wintek Corp Linear circuit of touch panel
TWI459424B (en) * 2011-11-25 2014-11-01 Primax Electronics Ltd Luminous keyboard
TW201836447A (en) * 2017-03-24 2018-10-01 致伸科技股份有限公司 Film circuit structure with expansion function

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201310279A (en) * 2011-08-17 2013-03-01 Tianjin Funa Yuanchuang Technology Co Ltd Touch keyboard and method for making the same
TWM518331U (en) * 2015-07-16 2016-03-01 許銘案 Device having photosensitive ag paste wire

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Granted publication date: 20220401