[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

CN112368831A - 一种集成电路 - Google Patents

一种集成电路 Download PDF

Info

Publication number
CN112368831A
CN112368831A CN201880095158.8A CN201880095158A CN112368831A CN 112368831 A CN112368831 A CN 112368831A CN 201880095158 A CN201880095158 A CN 201880095158A CN 112368831 A CN112368831 A CN 112368831A
Authority
CN
China
Prior art keywords
metal
pole
strips
layers
metal strip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201880095158.8A
Other languages
English (en)
Inventor
邹小卫
郑伟
吴春蕾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
Original Assignee
Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Publication of CN112368831A publication Critical patent/CN112368831A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

本申请公开了一种集成电路,该集成电路包括电容结构,所述电容结构包括设置在多层金属层上的多个金属条阵列,每金属条阵列中包括多个沿相同方向延伸的金属条(P1‑P5,V1‑V5),每个金属条阵列中的金属条(P1‑P5,V1‑V5)包括第一极金属条和第二极金属条,且第一极金属条和第二极金属条分别电连接不同的电极(E1,E2),如此,在同层金属层上可以形成横向电容。另外,每层金属层上的金属条阵列中的金属条的延伸方向与相邻金属层上的金属阵列中的金属条的延伸方向不同,因而,位于相邻两层金属层上的、在金属层所在平面上的投影有交叠的第一极金属条和第二极金属条之间也可以形成纵向电容。因而,该电容结构的电容密度较大,电容品质较高。

Description

PCT国内申请,说明书已公开。

Claims (10)

  1. PCT国内申请,权利要求书已公开。
CN201880095158.8A 2018-09-21 2018-09-21 一种集成电路 Pending CN112368831A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/106863 WO2020056705A1 (zh) 2018-09-21 2018-09-21 一种集成电路

Publications (1)

Publication Number Publication Date
CN112368831A true CN112368831A (zh) 2021-02-12

Family

ID=69888171

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880095158.8A Pending CN112368831A (zh) 2018-09-21 2018-09-21 一种集成电路

Country Status (2)

Country Link
CN (1) CN112368831A (zh)
WO (1) WO2020056705A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115249685A (zh) * 2021-04-27 2022-10-28 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1527385A (zh) * 2003-03-04 2004-09-08 台湾积体电路制造股份有限公司 多层叉合金属电容结构
CN101409286A (zh) * 2007-10-12 2009-04-15 瑞昱半导体股份有限公司 半导体电容结构
CN101593777A (zh) * 2008-05-29 2009-12-02 联发科技股份有限公司 电容结构及其金属层布局
CN102473710A (zh) * 2009-08-27 2012-05-23 国际商业机器公司 叉指状竖直平行电容器
CN205992528U (zh) * 2016-09-06 2017-03-01 中芯国际集成电路制造(北京)有限公司 一种mom电容器结构

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1527385A (zh) * 2003-03-04 2004-09-08 台湾积体电路制造股份有限公司 多层叉合金属电容结构
CN101409286A (zh) * 2007-10-12 2009-04-15 瑞昱半导体股份有限公司 半导体电容结构
CN101593777A (zh) * 2008-05-29 2009-12-02 联发科技股份有限公司 电容结构及其金属层布局
CN102473710A (zh) * 2009-08-27 2012-05-23 国际商业机器公司 叉指状竖直平行电容器
CN205992528U (zh) * 2016-09-06 2017-03-01 中芯国际集成电路制造(北京)有限公司 一种mom电容器结构

Also Published As

Publication number Publication date
WO2020056705A1 (zh) 2020-03-26

Similar Documents

Publication Publication Date Title
CN109742083B (zh) 三维存储器及其制造方法
US7274085B1 (en) Capacitor structure
EP0295707B1 (en) Semiconductor integrated circuit device having multilayer power supply lines
US9406672B2 (en) Capacitor arrays for minimizing gradient effects and methods of forming the same
US8558350B2 (en) Metal-oxide-metal capacitor structure
US10249705B2 (en) Capacitor array structure
US20150022948A1 (en) Capacitor structure
TWI487123B (zh) 用於電容器的結構體及其方法
JP5057616B2 (ja) 半導体装置およびその製造方法
US8027144B2 (en) Capacitor structure
US20050219790A1 (en) Semiconductor component comprising an integrated capacitor structure tha has a plurality of metallization planes
CN112368831A (zh) 一种集成电路
CN104425441A (zh) 一种mom电容器
JP2007234777A (ja) 半導体集積回路装置およびその設計方法
US20090225490A1 (en) Capacitor structure
KR100902503B1 (ko) 다층 수직 구조를 갖는 고용량 커패시터
CN115084149A (zh) 3d存储器件、3d存储器件的制造方法及存储系统
KR102330060B1 (ko) 반도체 장치 및 그 제조 방법
WO2023245834A1 (zh) 半导体结构
CN111009514B (zh) 用于半导体装置的电容元件单元及其半导体装置
CN110858580A (zh) 介质电容
TWI831224B (zh) 金屬氧化物金屬電容結構
TWI768889B (zh) 交錯式半導體電容陣列布局
US20220367437A1 (en) Semiconductor capacitor array layout with dummy capacitor structure
US10418179B2 (en) Multilayer thin-film capacitor

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20210212

WD01 Invention patent application deemed withdrawn after publication