CN112216795A

CN112216795A - Composite photovoltaic structure and method of making same

Info

Publication number: CN112216795A
Application number: CN201910616645.0A
Authority: CN
Inventors: 廖世文
Original assignee: Ways Technical Corp Ltd
Current assignee: Ways Technical Corp Ltd
Priority date: 2019-07-09
Filing date: 2019-07-09
Publication date: 2021-01-12

Abstract

The invention is provided with a first photovoltaic unit on a transparent substrate, and a second photovoltaic unit which is connected with the first photovoltaic unit in parallel is superposed above the first photovoltaic unit; the first photovoltaic unit is arranged on a second transparent electrode layer, a first transparent conducting layer electrically connected with the first transparent electrode layer is covered above the first photovoltaic unit, the second photovoltaic unit is arranged on the first transparent conducting layer, and a second transparent conducting layer electrically connected with the second transparent electrode layer is covered above the second photovoltaic unit; therefore, the composite photovoltaic structure which can greatly improve the omnibearing light-gathering gain photoelectric reaction area, effectively increase the current quantity, does not influence the thickness of the whole structure and has low manufacturing process cost is obtained.

Description

Composite photovoltaic structure and method of making same

Technical Field

The invention relates to a solar photoelectric technology, and aims to provide a composite photovoltaic structure which can greatly increase the omnibearing condensation gain photoelectric reaction area, effectively increase the current quantity, does not influence the thickness of the whole structure and has low manufacturing cost, and a manufacturing method of the composite photovoltaic structure related to the composite photovoltaic structure.

Background

The research of the thin film type battery is one direction expected by the public in the renewable energy. Although most of the solar cells commercialized today use silicon as its main material, thin film type cells are spotlighted by the industry and academia due to their characteristics such as simple process, light material, flexibility, etc.

Currently, Coating (Coating) is a technique for preparing a thin film of a solar cell during the preparation of a thin film type cell, and has the advantage of enabling the thin film to have better flatness and uniformity. Further, R2R (Reel-to-Reel, or Roll-to-Roll) process is a potential technique for large-area solar cell fabrication, and has been used in the industry, for example, in the fabrication of a flexible display (flexible display), based on the "soft" property of the flexible display, R2R process can be well matched with the operation of the flexible display, so as to produce these products with the advantages of plasticity, light weight, impact resistance, etc. at a lower cost.

The photoelectric conversion device of the thin film battery has various structures, one of which is called an organic polymer photovoltaic structure or a perovskite photovoltaic structure, and the related structure is shown in fig. 1, wherein a photovoltaic unit 12 is mainly disposed on a transparent substrate 11, an upper surface layer 123 and a lower surface layer 121 of the photovoltaic unit 12 are respectively a transparent electron transport layer and a transparent hole transport layer, and a transparent active layer 122 is disposed between the upper surface layer 123 and the lower surface layer 121.

The panel surface of the transparent substrate 11 is provided with a first transparent electrode layer 131 and a second transparent electrode layer 132 for forming insulation, the photovoltaic unit 12 is disposed on the second transparent electrode layer 132, a transparent conductive layer 141 electrically connected to the first transparent electrode layer 131 is disposed on the upper surface 123 of the photovoltaic unit 12, and an insulation layer 142 is disposed between the side surface of the photovoltaic unit 12 and the transparent conductive layer 141.

Similar to the conventional photovoltaic structure shown in fig. 1, although it has a wide optical spectrum adapted to the photoelectric conversion, a thin structure, a process condition of only 180 ℃ or lower, and the aforementioned low-illumination photoelectric conversion; however, the low light environment is limited by the low light intensity of the incident light source, and the current output for conversion is low even at high effective photoelectric conversion efficiency.

Disclosure of Invention

In view of the above, the present invention provides a composite photovoltaic structure and a manufacturing method thereof, which can greatly increase the photoelectric reaction area of the omnidirectional light gathering gain, effectively increase the current amount, do not affect the thickness of the whole structure, and have low manufacturing cost.

According to the composite photovoltaic structure, a first photovoltaic unit is arranged on a transparent substrate, and a second photovoltaic unit connected with the first photovoltaic unit in parallel is superposed above the first photovoltaic unit; the upper surface layer and the lower surface layer of the first photovoltaic unit and the second photovoltaic unit are respectively a transparent electron transfer layer and a transparent hole transfer layer, and a transparent active layer is respectively arranged between the upper surface layer and the lower surface layer of the first photovoltaic unit and the second photovoltaic unit; wherein: the surface of the transparent substrate is provided with a first transparent electrode layer and a second transparent electrode layer which form insulation, and the first photovoltaic unit is arranged on the second transparent electrode layer in a state that the lower surface layer of the first photovoltaic unit is contacted with the second transparent electrode layer; a first transparent conducting layer electrically connected with the first transparent electrode layer is covered on the upper surface of the first photovoltaic unit; the second photovoltaic unit is arranged on the first transparent conductive layer in a state that the lower surface layer of the second photovoltaic unit is contacted with the first transparent conductive layer; a second transparent conducting layer electrically connected with the second transparent electrode layer is covered on the upper surface layer of the second photovoltaic unit; the first transparent conducting layer extends to the first transparent electrode layer along the side surface of the first photovoltaic unit, and a first insulating layer is arranged between the side surface of the first photovoltaic unit and the first transparent conducting layer; the second transparent conducting layer extends to the second transparent electrode layer along the side face of the second photovoltaic unit, the side face of the first transparent conducting layer and the side face of the first photovoltaic unit, and a second insulating layer is arranged among the side face of the second photovoltaic unit, the side face of the first transparent conducting layer and the side face of the first photovoltaic unit and the second transparent conducting layer.

By utilizing the technical characteristics, the composite photovoltaic structure which can greatly improve the omnibearing light-gathering gain photoelectric reaction area, effectively increase the current quantity, does not influence the thickness of the whole structure and has low manufacturing process cost can be obtained.

According to the above technical features, the composite photovoltaic structure is provided with an optical hardening layer between the panel surface of the transparent substrate and the first and second transparent electrode layers.

According to the above technical features, the first photovoltaic unit and the second photovoltaic unit are organic photovoltaic units.

According to the above technical features, the first photovoltaic unit and the second photovoltaic unit are perovskite photovoltaic units.

According to the above technical feature, the first photovoltaic unit is an organic photovoltaic unit, and the second photovoltaic unit is a perovskite photovoltaic unit.

According to the above technical feature, the first photovoltaic unit is a perovskite photovoltaic unit, and the second photovoltaic unit is an organic photovoltaic unit.

According to the above technical features, the first photovoltaic unit and the second photovoltaic unit are organic photovoltaic units; the transparent electron transfer layers of the first photovoltaic unit and the second photovoltaic unit can be formed by slit coating PEI (polyethylenimine) and PEIE (polyethylenimine ethoxylated) as main components, drying with hot air at 90-140 ℃ for 3 minutes, and preferably having a thickness of 0.5-10 nm; the transparent hole transport layers of the first and second photovoltaic units may be solvent-diluted PEDOT: PSS (3,4-ethylenedioxythiophene) -Poly (phenylenesulfonate)) as a main component (PEDOT: PSS), a polymer containing a plurality of EDOT (3,4-ethylenedioxythiophene monomers) and a plurality of sodium polystyrene sulfonate (PSS) are mixed, and the mixture is formed by diluting with polar solvents (such as ethanol) such as alcohols, coating the mixture through a slit, drying the mixture for 5 minutes at 90-140 ℃ in a nitrogen atmosphere, and then drying and forming the mixture, wherein the thickness is preferably 100-500 nm; the transparent active layers of the first and second photovoltaic units may be solvent-diluted P3HT/PCBM, PCPDTBT/PCBM (poly [2,6- (4,4-bis- (2-ethylhexyl) -4H-cyclopenta [2, 1-b; 3, 4-b']dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)]:phenyl-C₆₁Butyl acid methyl ester), in which P3HT/PCBM is a polymer semiconductor having a plurality of poly (3-hexylthiophene), P3HT (P-type material) and a plurality of phenyl-C₆₁Butyric acid methyl ester (phenyl-C)₆₁PCBM (n-type material)) is mixed, diluted with o-xylene, slit coated, and then subjected to 90-140 ℃ nitrogen atmosphereDrying for 3 minutes and forming, wherein the thickness is preferably 100-500 nm.

According to the above technical features, the first photovoltaic unit and the second photovoltaic unit are perovskite photovoltaic units; the transparent electron transfer layers of the first photovoltaic unit and the second photovoltaic unit can be formed by slit coating of PEDOT, PSS, Poly (3-phenylene) (P3HT) and Poly (bis (4-phenyl) (2,4,6-trimethylphenyl) amine) (PTAA), drying at 90-140 ℃ for 5 minutes in nitrogen atmosphere, and drying to a thickness of 100-500 nm; the transparent hole transfer layer of the first photovoltaic unit and the second photovoltaic unit can be formed by diluting main components containing PDPP3T, namely PCBM with a solvent, coating the main components with a slit, drying the main components for 5 minutes in a nitrogen atmosphere at 90-140 ℃ and drying the main components for forming, wherein the thickness is preferably 1-100 nm; the transparent active layers of the first and second photovoltaic units may be formed from CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃(Formamidinium Lead Iodide)、FAPbBr₃One or a combination of (Formamidinium Lead bromine) is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm.

According to the above technical features, the first photovoltaic unit is an organic photovoltaic unit, and the second photovoltaic unit is a perovskite photovoltaic unit; the transparent electron transfer layer of the first photovoltaic unit can be formed by coating PEI and PEIE serving as main components through a slit, drying the coated main components for 3 minutes at 90-140 ℃ by hot air, and preferably forming the coated main components with the thickness of 0.5-10 nm; the transparent hole transport layer of the first photovoltaic unit can be a solvent-diluted PEDOT: PSS (PEDOT: PSS) which is a main component and is formed by mixing a Polymer (PEDOT) containing a plurality of EDOT (3,4-ethylenedioxythiophene monomers) and a plurality of sodium-p-styrene sulfonate (PSS), for example, the mixture is diluted by polar solvents (such as alcohol) and the like (such as ethanol), dried for 5 minutes by slot coating at 90-140 ℃ in nitrogen atmosphere and then dried for forming, and the thickness is preferably 100-500 nm; the transparent active layer of the first photovoltaic unit can be P3HT/PCBM, PCPDTBT/PCBM diluted by solvent, wherein P3HT/PCBM is poly (3-hexylthiophene), P3HT (P-type material) polymer semiconductor and phenyl-C₆₁Butyric acid methyl ester (phe)nyl-C₆₁-butyl acid methyl ester, PCBM (n-type material)), diluted with ortho-xylene, slit coated, dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere, and dried to form, preferably 100-500 nm thick; the transparent electron transfer layer of the second photovoltaic unit can be formed by slit coating of PEDOT, PSS, Poly (3-hexylthiophene) (P3HT) and Poly (bis (4-phenyl) (2,4, 6-trimetylphenyl) amine) (PTAA), drying at 90-140 ℃ for 5 minutes in nitrogen atmosphere, and drying to a thickness of 100-500 nm; the transparent hole transfer layer of the second photovoltaic unit can be formed by diluting main components containing PDPP3T, namely PCBM with a solvent, coating with a slit, drying at 90-140 ℃ for 5 minutes in a nitrogen atmosphere, and drying to form the transparent hole transfer layer, wherein the thickness is preferably 1-100 nm; the transparent active layer of the second photovoltaic unit can be formed by CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or a combination of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm.

According to the above technical features, the first photovoltaic unit is a perovskite photovoltaic unit, and the second photovoltaic unit is an organic photovoltaic unit; the transparent electron transfer layer of the first photovoltaic unit can be formed by slit coating of PEDOT, PSS, Poly (3-hexylthiophene) (P3HT) and Poly (bis (4-phenyl) (2,4, 6-trimetylphenyl) amine) (PTAA), drying at 90-140 ℃ for 5 minutes in nitrogen atmosphere, and drying to a thickness of 100-500 nm; the transparent hole transfer layer of the first photovoltaic unit can be formed by diluting main components containing PDPP3T, namely PCBM with a solvent, coating with a slit, drying at 90-140 ℃ for 5 minutes in a nitrogen atmosphere, and drying to form the transparent hole transfer layer, wherein the thickness is preferably 1-100 nm; the transparent active layer of the first photovoltaic unit can be formed by CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or the combination of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm; the transparent electron transfer layer of the second photovoltaic unit can be formed by coating PEI and PEIE serving as main components through a slit, drying the coated main components for 3 minutes at 90-140 ℃ by hot air, and preferably forming the coated main components with the thickness of 0.5-10 nm; theThe transparent hole transport layer of the second photovoltaic unit can be a solvent-diluted PEDOT: PSS (PEDOT: PSS) which is a main component and is formed by mixing a polymer containing a plurality of EDOT (3,4-ethylenedioxythiophene monomers) and a plurality of sodium-p-styrene sulfonate (PSS), for example, the PSS is formed by diluting with polar solvents (such as alcohol) and the like, drying for 5 minutes in nitrogen atmosphere at 90-140 ℃ through slot coating, and then drying and forming, wherein the thickness is preferably 100-500 nm; the transparent active layer of the second photovoltaic unit can be P3HT/PCBM, PCPDTBT/PCBM diluted by solvent, wherein P3HT/PCBM is poly (3-hexylthiophene), P3HT (P-type material) polymer semiconductor and poly phenyl-C₆₁Butyric acid methyl ester (phenyl-C)₆₁-butyl acid methyl ester, PCBM (n-type material)), diluted with o-xylene, slit coated, dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere, and dried to form, preferably to a thickness of 100-500 nm.

According to the above technical features, the first transparent electrode layer and the second transparent electrode layer may be formed by evaporating or sputtering ITO (Indium Tin Oxide), izo (Indium polysilicon) or azo (aluminum polysilicon) on the transparent substrate, and the thickness is preferably 50 to 200 nm.

According to the above technical features, the first transparent conductive layer is formed by evaporation of Ag, Au, Pt or Pd, and the thickness is preferably 50-200 nm.

According to the above technical characteristics, the second transparent conductive layer is formed by evaporation of Ag, Au, Pt or Pd, and the thickness is preferably 50-200 nm.

According to the above technical features, the optical hardening layer can be one of acryl, epoxy resin, silicon dioxide or a combination thereof, and the thickness is preferably 1 μm to 5 μm.

According to the above technical features, the first insulating layer and the second insulating layer can be formed by printing and coating a polyester polymer (polyester polymer) and drying the polyester polymer with hot air at 90-140 ℃ for 10 minutes.

The manufacturing method of the composite photovoltaic structure comprises the following steps: a. building a transparent electrode layer material, providing a transparent substrate, and arranging the transparent electrode layer material with a preset thickness on the surface of the transparent substrate; b. building a first photovoltaic unit, sequentially building materials of each layer of the first photovoltaic unit on the transparent electrode layer material, enabling an upper surface layer and a lower surface layer of the first photovoltaic unit to be a transparent electron transfer layer and a transparent hole transfer layer respectively, and arranging a transparent active layer between the upper surface layer and the lower surface layer of the first photovoltaic unit; c. establishing a first insulating layer, scribing at least one first insulating material channel penetrating through the transparent electrode layer material on the upper surface layer of the first photovoltaic unit, and filling insulating material in each first insulating material channel to form a first insulating layer in each first insulating material channel, wherein each first insulating layer separates the transparent electrode layer material into a first transparent electrode layer which is relatively positioned below the first photovoltaic unit and a second transparent electrode layer which is relatively positioned outside the first photovoltaic unit; d. establishing first transparent conducting layers, etching first transparent conducting material channels from the upper surface layer of the first photovoltaic unit to the transparent electrode layer material at the side surface positions of the first insulating layers, and covering transparent conducting materials on the upper surface layer of the first photovoltaic unit and in the first transparent conducting material channels to form a first transparent conducting layer which is covered on the upper surface layer of the first photovoltaic unit and is electrically connected with the first transparent electrode layer along the side surfaces of the first insulating layers; e. building a second photovoltaic unit, sequentially building materials of each layer of the second photovoltaic unit on the first transparent conducting layer on the top surface of the first photovoltaic unit, so that the upper surface layer and the lower surface layer of the second photovoltaic unit are respectively a transparent electron transfer layer and a transparent hole transfer layer, and a transparent active layer is arranged between the upper surface layer and the lower surface layer of the second photovoltaic unit; f. building a second insulating layer, scribing at least one second insulating material channel penetrating to the transparent electrode layer material on the upper surface layer of the second photovoltaic unit, and filling insulating materials in each second insulating material channel to form a second insulating layer in each second insulating material channel; g. establishing second transparent conductive layers, etching second transparent conductive material channels from the upper surface layer of the second photovoltaic unit to the transparent electrode layer material at the side surface positions of the second insulating layers, and covering transparent conductive materials on the upper surface of the second photovoltaic unit and in the second transparent conductive material channels to form a second transparent conductive layer which is covered on the upper surface layer of the second photovoltaic unit and is electrically connected with the second transparent electrode layer along the side surfaces of the second insulating layers; h. and a finished product partition, namely scribing a cutting channel penetrating through the transparent electrode layer material on the surface of the second transparent conductive layer, and further partitioning the second transparent conductive layer material from the transparent substrate to form at least one composite photovoltaic structure which is superposed above a first photovoltaic unit and connected with a second photovoltaic unit in parallel.

According to the technical characteristics, the manufacturing method of the composite photovoltaic structure is characterized in that the plate surface of the transparent substrate is provided with an optical hardening layer, and the transparent electrode layer material is arranged on the optical hardening layer.

According to the above technical features, the first photovoltaic unit and the second photovoltaic unit are organic photovoltaic units; the transparent electron transfer layers of the first photovoltaic unit and the second photovoltaic unit can be formed by coating PEI and PEIE serving as main components through a slit, drying the coated main components for 3 minutes at 90-140 ℃ by hot air, and preferably forming the coated main components with the thickness of 0.5-10 nm; the transparent hole transport layers of the first and second photovoltaic units may be solvent-diluted PEDOT: PSS (PEDOT: PSS) as main component, which is prepared by mixing a polymer containing a plurality of EDOT (3,4-ethylenedioxythiophene monomer) and a plurality of sodium-p-styrene sulfonate (PSS), for example, diluting with polar solvent (such as alcohol) and drying for 5 minutes in nitrogen atmosphere at 90-140 ℃ through slit coating, and then drying and forming, wherein the thickness is 100-500 nmPreferably; the transparent active layers of the first and second photovoltaic units may be solvent-diluted P3HT/PCBM, PCPDTBT/PCBM, wherein P3HT/PCBM is poly (3-hexylthiophene), P3HT (P-type material) polymer semiconductor and poly (phenyl-C)₆₁Butyric acid methyl ester (phenyl-C)₆₁-butyl acid methyl ester, PCBM (n-type material)), diluted with ortho-xylene, slit coated, dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere, and dried to form, preferably to a thickness of 100-500 nm.

According to the above technical features, the first photovoltaic unit and the second photovoltaic unit are perovskite photovoltaic units; the transparent electron transfer layers of the first photovoltaic unit and the second photovoltaic unit can be formed by slit coating of PEDOT, PSS, Poly (3-phenylene) (P3HT) and Poly (bis (4-phenyl) (2,4,6-trimethylphenyl) amine) (PTAA), drying at 90-140 ℃ for 5 minutes in nitrogen atmosphere, and drying to a thickness of 100-500 nm; the transparent hole transfer layer of the first photovoltaic unit and the second photovoltaic unit can be formed by diluting main components containing PDPP3T, namely PCBM with a solvent, coating the main components with a slit, drying the main components for 5 minutes in a nitrogen atmosphere at 90-140 ℃ and drying the main components for forming, wherein the thickness is preferably 1-100 nm; the transparent active layers of the first and second photovoltaic units may be formed from CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or a combination of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm.

According to the above technical features, the first photovoltaic unit is an organic photovoltaic unit, and the second photovoltaic unit is a perovskite photovoltaic unit; the transparent electron transfer layer of the first photovoltaic unit can be formed by coating PEI and PEIE serving as main components through a slit, drying the coated main components for 3 minutes at 90-140 ℃ by hot air, and preferably forming the coated main components with the thickness of 0.5-10 nm; the transparent hole transport layer of the first photovoltaic unit can be a solvent-diluted PEDOT: PSS (PEDOT: PSS) as main component, which is prepared by mixing polymer containing plural EDOT (3,4-ethylenedioxythiophene monomer) and plural sodium-p-styrene sulfonate (PSS), such as alcohol and other polar solvents (such as ethanol)) After dilution, drying the mixture for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then drying and forming, wherein the thickness is preferably 100-500 nm; the transparent active layer of the first photovoltaic unit can be P3HT/PCBM, PCPDTBT/PCBM diluted by solvent, wherein P3HT/PCBM is poly (3-hexylthiophene), P3HT (P-type material) polymer semiconductor and phenyl-C₆₁Butyric acid methyl ester (phenyl-C)₆₁-butyl acid methyl ester, PCBM (n-type material)), diluted with ortho-xylene, slit coated, dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere, and dried to form, preferably 100-500 nm thick; the transparent electron transfer layer of the second photovoltaic unit can be formed by slit coating of PEDOT, PSS, Poly (3-hexylthiophene) (P3HT) and Poly (bis (4-phenyl) (2,4, 6-trimetylphenyl) amine) (PTAA), drying at 90-140 ℃ for 5 minutes in nitrogen atmosphere, and drying to a thickness of 100-500 nm; the transparent hole transfer layer of the second photovoltaic unit can be formed by diluting main components containing PDPP3T, namely PCBM with a solvent, coating with a slit, drying at 90-140 ℃ for 5 minutes in a nitrogen atmosphere, and drying to form the transparent hole transfer layer, wherein the thickness is preferably 1-100 nm; the transparent active layer of the second photovoltaic unit can be formed by CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or a combination of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm.

According to the above technical features, the first photovoltaic unit is a perovskite photovoltaic unit, and the second photovoltaic unit is an organic photovoltaic unit; the transparent electron transfer layer of the first photovoltaic unit can be formed by slit coating of PEDOT, PSS, Poly (3-hexylthiophene) (P3HT) and Poly (bis (4-phenyl) (2,4, 6-trimetylphenyl) amine) (PTAA), drying at 90-140 ℃ for 5 minutes in nitrogen atmosphere, and drying to a thickness of 100-500 nm; the transparent hole transfer layer of the first photovoltaic unit can be formed by diluting main components containing PDPP3T, namely PCBM with a solvent, coating with a slit, drying at 90-140 ℃ for 5 minutes in a nitrogen atmosphere, and drying to form the transparent hole transfer layer, wherein the thickness is preferably 1-100 nm; the transparent active layer of the first photovoltaic unit can be formed by CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or the combination of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm; the transparent electron transfer layer of the second photovoltaic unit can be formed by coating PEI and PEIE serving as main components through a slit, drying the coated main components for 3 minutes at 90-140 ℃ by hot air, and preferably forming the coated main components with the thickness of 0.5-10 nm; the transparent hole transport layer of the second photovoltaic unit can be a solvent-diluted PEDOT: PSS (PEDOT: PSS) which is a main component and is formed by mixing a polymer containing a plurality of EDOT (3,4-ethylenedioxythiophene monomers) and a plurality of sodium-p-styrene sulfonate (PSS), for example, the PSS is formed by diluting with polar solvents (such as alcohol) and the like, drying for 5 minutes in nitrogen atmosphere at 90-140 ℃ through slot coating, and then drying and forming, wherein the thickness is preferably 100-500 nm; the transparent active layer of the second photovoltaic unit can be P3HT/PCBM, PCPDTBT/PCBM diluted by solvent, wherein P3HT/PCBM is poly (3-hexylthiophene), P3HT (P-type material) polymer semiconductor and poly phenyl-C₆₁Butyric acid methyl ester (phenyl-C)₆₁-butyl acid methyl ester, PCBM (n-type material)), diluted with o-xylene, slit coated, dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere, and dried to form, preferably to a thickness of 100-500 nm.

According to the above technical features, the transparent electrode layer material can be formed by evaporating or sputtering ITO, IZO or AZO onto the transparent substrate, and the thickness is preferably 50-200 nm.

The composite photovoltaic structure disclosed by the invention is mainly used for the technical characteristics that the first photovoltaic unit and the second photovoltaic unit which are mutually overlapped and connected in parallel are arranged on the transparent substrate, the omnibearing light-gathering gain photoelectric reaction area can be greatly increased under the condition of not influencing the thickness of the whole structure, the current quantity is effectively increased, the manufacturing cost is low, and the application requirement of a product with small volume is relatively met.

Drawings

Fig. 1 is a cross-sectional view of a conventional photovoltaic structure.

Fig. 2 is a cross-sectional view of a composite photovoltaic structure according to a first embodiment of the present invention.

Fig. 3 is a cross-sectional view of a composite photovoltaic structure according to a second embodiment of the present invention.

Fig. 4 is a basic flow diagram of a method of fabricating a composite photovoltaic structure according to the present invention.

FIG. 5 is a completed diagram of the transparent electrode layer material according to the present invention.

Fig. 6 is a completed diagram of the first photovoltaic unit according to the present invention.

FIG. 7 is a completed diagram of the first insulating layer in the present invention.

FIG. 8 is a completed first transparent conductive layer according to the present invention.

Fig. 9 is a completed diagram of the second photovoltaic unit according to the present invention.

FIG. 10 is a completed second insulating layer in accordance with the present invention.

FIG. 11 is a completed second transparent conductive layer according to the present invention.

FIG. 12 is a diagram of the completed division of the first transparent electrode layer and the second transparent electrode layer according to the present invention.

Description of the figure numbers:

Prior Art

11 transparent substrate

12 photovoltaic unit

121 lower surface layer

122 transparent active layer

123 upper surface layer

131 first transparent electrode layer

132 second transparent electrode layer

141 transparent conductive layer

142 insulating layer

The invention

20 transparent substrate

21 first insulating material channel

22 first transparent conductive material channel

23 passage of a second insulating material

24 second transparent conductive material channel

25 cutting channel

30 first photovoltaic unit

31 lower surface layer

32 transparent active layer

33 upper surface layer

40 second photovoltaic unit

41 lower surface layer

42 transparent active layer

43 upper surface layer

50 transparent electrode layer material

51 first transparent electrode layer

52 second transparent electrode layer

61 first transparent conductive layer

62 second transparent conductive layer

71 first insulating layer

72 second insulating layer

80 optically hardening layer.

Detailed Description

The present invention mainly provides a composite photovoltaic structure which can greatly increase the photoelectric reaction area of the omnidirectional light gathering gain, effectively increase the current amount, does not affect the thickness of the whole structure, and has low manufacturing process cost, as shown in fig. 2, the composite photovoltaic structure of the present invention is provided with a first photovoltaic unit 30 on a transparent substrate 20, and a second photovoltaic unit 40 connected in parallel with the first photovoltaic unit 30 is superposed above the first photovoltaic unit 30; the upper surface layers 33, 43 and the lower surface layers 31, 41 of the first photovoltaic unit 30 and the second photovoltaic unit 40 are respectively a transparent electron transport layer and a transparent hole transport layer, and a transparent

active layer

32, 42 is respectively disposed between the upper surface layers 33, 43 and the lower surface layers 31, 41 of the first photovoltaic unit 30 and the second photovoltaic unit 40.

A first transparent electrode layer 51 and a second transparent electrode layer 52 which form insulation are arranged on the plate surface of the transparent substrate 20, and the first photovoltaic unit 30 is arranged on the second transparent electrode layer 52 in a state that the lower surface layer 31 thereof is contacted with the second transparent electrode layer 52; a first transparent conductive layer 61 electrically connected to the first transparent electrode layer 51 is disposed on the upper surface 33 of the first photovoltaic unit 30.

The second photovoltaic unit 40 is disposed on the first transparent conductive layer 61 in a manner that the lower surface layer 41 thereof is in contact with the first transparent conductive layer 61; the second photovoltaic unit 40 has a second transparent conductive layer 62 coated on the upper surface 43 thereof and electrically connected to the second transparent electrode layer 52.

The first transparent conductive layer 61 extends to the first transparent electrode layer 51 along the side surface of the first photovoltaic unit 30, and a first insulating layer 71 is disposed between the side surface of the first photovoltaic unit 30 and the first transparent conductive layer 61; the second transparent conductive layer 62 extends to the second transparent electrode layer 52 along the side of the second photovoltaic cell 40, the side of the first transparent conductive layer 61 and the side of the first photovoltaic cell 30, and a second insulating layer 72 is disposed between the side of the second photovoltaic cell 40, the side of the first transparent conductive layer 61 and the side of the first photovoltaic cell 30 and the second transparent conductive layer 62.

In principle, in practical applications, the composite photovoltaic structures of the present invention can be serially connected to form a photovoltaic cell assembly, and ALD (atomic layer deposition) is used to form aluminum oxide or silicon dioxide for deposition and isolation to achieve air-resistance encapsulation, or transparent encapsulation materials such as glass substrate or transparent plastic plate are used to complete air-resistance encapsulation, so that the design of the first and second

photovoltaic units

30 and 40 stacked and connected in parallel on the transparent substrate 20 can be used, and the overall light-gathering gain photoelectric reaction area can be greatly increased without affecting the thickness of the overall structure, thereby effectively increasing the current amount, reducing the manufacturing cost, and relatively meeting the application requirements of small-sized products. The transparent substrate 20 may be transparent glass or a transparent plastic film, such as a transparent PET (polyester) film.

Furthermore, as shown in fig. 3, in the composite photovoltaic structure of the present invention, an optical hardening layer 80 is further disposed between the panel surface of the transparent substrate 20 and the first transparent electrode layer 51 and the second transparent electrode layer 52; in practice, the optical hardening layer 80 may be one or a combination of acryl, epoxy resin, and silicon dioxide, and the thickness is preferably 1 μm to 5 μm, and the mechanical structure strength of the overall composite photovoltaic structure can be increased by the arrangement of the optical hardening layer 80.

In the implementation of the composite photovoltaic structure of the present invention, the first photovoltaic unit 30 and the second photovoltaic unit 40 can be used as the organic photovoltaic unit; or the first photovoltaic unit 30 and the second photovoltaic unit 40 are perovskite photovoltaic units; or the first photovoltaic unit 30 is an organic photovoltaic unit and the second photovoltaic unit 40 is a perovskite photovoltaic unit; or the first photovoltaic unit 30 is a perovskite photovoltaic unit and the second photovoltaic unit 40 is an organic photovoltaic unit.

As for the

upper layers

31, 41 of the first photovoltaic unit 30 and the second photovoltaic unit 40, which are transparent electron transport layers or transparent hole transport layers, respectively, the adjustment can be made according to the actual electrode configuration.

In the composite photovoltaic structure of the present invention, in an implementation mode in which the first photovoltaic unit 30 and the second photovoltaic unit 40 are organic photovoltaic units; the transparent electron transfer layer of the first photovoltaic unit 30 and the second photovoltaic unit 40 can be formed by slit coating PEI or PEIE as a main component, drying with hot air at 90-140 ℃ for 3 minutes, and preferably having a thickness of 0.5-10 nm; the transparent hole transport layers of the first photovoltaic cell 30 and the second photovoltaic cell 40 may be solvent-diluted PEDOT: PSS as main component (i.e. mixture of PEDOT and PSS), polymer containing plural EDOT (3,4-ethylenedioxythiophene monomer) and plural sodium-p-styrene sulfonatee, PSS), such as diluting with polar solvent (such as alcohol) and drying for 5 minutes in nitrogen atmosphere at 90-140 ℃ by slit coating, and drying and forming, wherein the thickness is preferably 100-500 nm; the transparent active layers 32, 42 of the first photovoltaic unit 30 and the second photovoltaic unit 40 can be solvent-diluted P3HT/PCBM (P3HT mixed with PCBM), PCPDTBT/PCBM (PCPDTBT mixed with PCBM), wherein P3HT/PCBM is a poly (3-hexylthiophene), P3HT (P-type material) polymer semiconductor and a poly (phenyl-C)₆₁Butyric acid methyl ester (phenyl-C)₆₁-butyl acid methyl ester, PCBM (n-type material)), diluted with o-xylene, slit coated, dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere, and dried to form, preferably to a thickness of 100-500 nm.

In the composite photovoltaic structure of the present invention, in an implementation mode in which the first photovoltaic unit 30 and the second photovoltaic unit 40 are perovskite photovoltaic units; the transparent electron transport layer of the first photovoltaic unit 30 and the second photovoltaic unit 40 can be made of PEDOT, PSS (mixture of PEDOT and PSS), Poly (3-hexylthiophene) (P3HT) or Poly (bis (4-phenyl) (2,4, 6-trimetylphenyl) amine) (PTAA), which is slit coated, dried at 90-140 ℃ for 5 minutes in nitrogen atmosphere, and dried to form, preferably to a thickness of 100-500 nm; the transparent hole transport layer of the first photovoltaic unit 30 and the second photovoltaic unit 40 may be formed by diluting a main component containing PDPP3T: PCBM (mixture of PDPP3T and PCBM) with a solvent, slit-coating, drying at 90-140 ℃ for 5 minutes in a nitrogen atmosphere, and drying to form a film with a thickness of 1-100 nm; the transparent active layers 32, 42 of the first photovoltaic unit 30 and the second photovoltaic unit 40 may be formed from CH3NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or a combination of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm.

In the composite photovoltaic structure of the present invention, in an implementation mode in which the first photovoltaic unit 30 is an organic photovoltaic unit and the second photovoltaic unit 40 is a perovskite photovoltaic unit; the transparent electron transfer layer of the first photovoltaic unit 30 may be slit-coated with PEI or PEIE as a main component and then dried with hot air at 90-140 deg.CDrying for 3 minutes, and forming, wherein the thickness is preferably 0.5-10 nm; the transparent hole transport layer of the first photovoltaic unit 30 can be a solvent-diluted PEDOT: PSS (PEDOT: PSS) which is a main component and is formed by mixing a polymer containing a plurality of EDOT (3,4-ethylenedioxythiophene monomers) and a plurality of sodium-p-styrene sulfonate (PSS), for example, the PSS is formed by diluting with polar solvents (such as alcohol) and the like, drying for 5 minutes in nitrogen atmosphere at 90-140 ℃ through slot coating, and then drying and forming, wherein the thickness is preferably 100-500 nm; the transparent active layer 32 of the first photovoltaic cell 30 may be solvent-diluted P3HT/PCBM, PCPDTBT/PCBM, wherein the P3HT/PCBM is a poly (3-hexylthiophene), P3HT (P-type material) polymer semiconductor and a poly (phenyl-C)₆₁Butyric acid methyl ester (phenyl-C)₆₁-butyl acid methyl ester, PCBM (n-type material)), diluted with ortho-xylene, slit coated, dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere, and dried to form, preferably 100-500 nm thick; the transparent electron transport layer of the second photovoltaic unit 40 may be formed by slit coating of PEDOT, PSS, Poly (3-hexylthiophene) (P3HT) or Poly (bis (4-phenyl) (2,4, 6-trimetylphenyl) amine) (PTAA), drying at 90-140 deg.C for 5 minutes in nitrogen atmosphere, and drying to a thickness of 100-500 nm; the transparent hole transport layer of the second photovoltaic unit 40 may be formed by diluting a main component containing PDPP3T: PCBM (mixture of PDPP3T and PCBM) with a solvent, slit-coating, drying at 90-140 deg.C for 5 min in nitrogen atmosphere, and drying to form a film with a thickness of 1-100 nm; the transparent active layer 42 of the second photovoltaic unit 40 may be formed of CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or a combination of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm.

In the composite photovoltaic structure of the present invention, in an implementation mode in which the first photovoltaic unit 30 is a perovskite photovoltaic unit and the second photovoltaic unit 40 is an organic photovoltaic unit; the transparent electron transport layer of the first PV cell 30 may be made of PEDOT, PSS, Poly (3-phenylene) (P3HT) or Poly (bis (4-phenylene) (2,4, 6-trimetylphenyl) amine) (PTAA) coated with slit at 90E to EDrying and forming for 5 minutes at 140 ℃ in a nitrogen atmosphere, wherein the thickness is preferably 100-500 nm; the transparent hole transfer layer of the first photovoltaic unit 30 may be formed by diluting the main component containing PDPP3T, PCBM, with solvent, coating with slit, drying at 90-140 deg.C under nitrogen atmosphere for 5 min, and drying to form a film with a thickness of 1-100 nm; the transparent active layer 32 of the first photovoltaic unit 30 may be formed of CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or a mixture of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm; the transparent electron transfer layer of the second photovoltaic unit 40 can be formed by slit coating PEI and PEIE as main components, drying with hot air at 90-140 ℃ for 3 minutes, and preferably having a thickness of 0.5-10 nm; the transparent hole transport layer of the second photovoltaic unit 40 can be a solvent-diluted PEDOT: PSS (PEDOT: PSS) which is a main component and is formed by mixing a polymer containing a plurality of EDOT (3,4-ethylenedioxythiophene monomers) and a plurality of sodium-p-styrene sulfonate (PSS), for example, the PSS is formed by diluting with polar solvents (such as alcohol) and the like, drying for 5 minutes in nitrogen atmosphere at 90-140 ℃ through slot coating, and then drying and forming, wherein the thickness is preferably 100-500 nm; the transparent active layer 42 of the second photovoltaic unit 40 can be solvent-diluted P3HT/PCBM, PCPDTBT/PCBM, wherein the P3HT/PCBM is a poly (3-hexylthiophene), P3HT (P-type material) polymer semiconductor and a poly (phenyl-C)₆₁Butyric acid methyl ester (phenyl-C)₆₁-butyl acid methyl ester, PCBM (n-type material)), diluted with o-xylene, slit coated, dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere, and dried to form, preferably to a thickness of 100-500 nm.

In the composite photovoltaic structure of the present invention, in the implementation, the first transparent electrode layer 51 and the second transparent electrode layer 52 can be formed by ITO, IZO or AZO by evaporation or sputtering on the transparent substrate 20, and the thickness is preferably 50 to 200 nm.

In the composite photovoltaic structure of the present invention, the first transparent conductive layer 61 is formed by evaporation of Ag, Au, Pt or Pd, and the thickness is preferably 50 to 200 nm.

In the composite photovoltaic structure of the present invention, the second transparent conductive layer 62 is formed by evaporation of Ag, Au, Pt or Pd, and the thickness is preferably 50 to 200 nm.

In the composite photovoltaic structure of the present invention, in the implementation, the first insulating layer 71 and the second insulating layer 72 may be formed by printing and coating a polyester high molecular polymer (polyester polymer) and drying the printed and coated polyester high molecular polymer for 10 minutes at 90 to 140 ℃.

The present invention further discloses a method for manufacturing a composite photovoltaic structure, as shown in fig. 4 to 12, the method for manufacturing a composite photovoltaic structure of the present invention comprises the following steps.

a. The transparent electrode layer material 50 is built, a transparent substrate 20 is provided, and a transparent electrode layer material 50 with a predetermined thickness is disposed on the surface of the transparent substrate 20.

b. The first photovoltaic unit 30 is built, each layer of material of the first photovoltaic unit 30 is sequentially built on the transparent electrode layer material 50, the upper surface layer 33 and the lower surface layer 31 of the first photovoltaic unit 30 are respectively a transparent electron transfer layer and a transparent hole transfer layer, and a transparent active layer 32 is arranged between the upper surface layer 33 and the lower surface layer 31 of the first photovoltaic unit 30.

c. A first insulating layer 71 is established, at least one first insulating material channel 21 penetrating through the transparent electrode layer material 50 is scribed on the upper surface of the first photovoltaic unit 30 by a scribing means, and an insulating material is filled in each first insulating material channel 21, so that a first insulating layer 71 is formed in each first insulating material channel 21, and each first insulating layer 71 separates the transparent electrode layer material 50 into a first transparent electrode layer 51 relatively positioned below the first photovoltaic unit 30 and a second transparent electrode layer 52 relatively positioned outside the first photovoltaic unit 30. Wherein the scribing means is performed by laser etching, for example, the upper surface layer of the first photovoltaic unit 30 is performed by laser etching to scribe at least one first insulating material channel 21 penetrating the transparent electrode layer material 50.

d. Establishing a first transparent conductive layer 61, scribing a first transparent conductive material channel 22 from the upper surface layer 33 of the first photovoltaic unit 30 to the transparent electrode layer material 50 at the side position of each first insulating layer 71 by the scribing means, and covering a transparent conductive material on the surface of the upper surface layer 33 of the first photovoltaic unit 30 and in each first transparent conductive material channel 22, so as to form a first transparent conductive layer 61 covering the upper surface layer of the first photovoltaic unit 30 and electrically connected with the first transparent electrode layer 51 along the side surface of each first insulating layer 71.

e. A second photovoltaic unit 40 is built, each layer of material of the second photovoltaic unit 40 is sequentially built on the first transparent conductive layer 61 on the top surface of the first photovoltaic unit 30, the upper surface layer 43 and the lower surface layer 41 of the second photovoltaic unit 40 are respectively a transparent electron transport layer and a transparent hole transport layer, and a transparent active layer 42 is disposed between the upper surface layer 43 and the lower surface layer 41 of the second photovoltaic unit 40.

f. A second insulating layer 72 is formed, at least one second insulating material channel 23 penetrating to the transparent electrode layer material 50 is scribed on the upper surface layer 43 of the second photovoltaic unit 40 by the scribing means, and an insulating material is filled in each second insulating material channel 23, so that a second insulating layer 72 is formed in each second insulating material channel 23.

g. The second transparent conductive layer 62 is built, the second transparent conductive material channel 24 from the upper surface layer 43 of the second photovoltaic unit 40 to the transparent electrode layer material 50 is scribed at the side position of each second insulating layer 72 by the scribing means, and the transparent conductive material is covered on the surface of the upper surface layer 43 of the second photovoltaic unit 40 and in each second transparent conductive material channel 24, so as to form a second transparent conductive layer 62 covering the upper surface layer 43 of the second photovoltaic unit 40 and electrically connected with the second transparent electrode layer 52 along the side of each second insulating layer 72.

h. The finished product is divided into a cutting channel 25 penetrating the transparent electrode layer material 50 on the surface of the second transparent conductive layer 62 by the scribing means, and further divided into a composite photovoltaic structure (as shown in fig. 2) built on the transparent substrate 20 and formed at least one first photovoltaic unit 30 and a second photovoltaic unit 40 in parallel stacked above the first photovoltaic unit.

Similarly, in the method for manufacturing a composite photovoltaic structure of the present invention, when implemented, an optical hardening layer 80 (as shown in fig. 3) may be further disposed on the surface of the transparent substrate 20, and the transparent electrode layer material 50 is disposed on the optical hardening layer 80; in practice, the optical hardening layer 80 may be one or a combination of acryl, epoxy resin, and silicon dioxide, and the thickness is preferably 1 μm to 5 μm, and the mechanical structure strength of the overall composite photovoltaic structure is increased by the arrangement of the optical hardening layer 80.

In the manufacturing method of the composite photovoltaic structure, the first photovoltaic unit 30 and the second photovoltaic unit 40 can be used as the organic photovoltaic unit; or the first photovoltaic unit 30 and the second photovoltaic unit 40 are perovskite photovoltaic units; or the first photovoltaic unit 30 is an organic photovoltaic unit and the second photovoltaic unit 40 is a perovskite photovoltaic unit; or the first photovoltaic unit 30 is a perovskite photovoltaic unit and the second photovoltaic unit 40 is an organic photovoltaic unit.

In the method for manufacturing a composite photovoltaic structure of the present invention, in an implementation mode in which the first photovoltaic unit 30 and the second photovoltaic unit 40 are organic photovoltaic units; the transparent electron transfer layers of the first photovoltaic unit 30 and the second photovoltaic unit 40 can be formed by slit coating PEI and PEIE as main components, drying with hot air at 90-140 ℃ for 3 minutes, and forming, wherein the thickness is preferably 0.5-10 nm; the transparent hole transport layers of the first photovoltaic cell 30 and the second photovoltaic cell 40 may be solvent-diluted PEDOT: PSS (PEDOT: PSS) which is a main component and is formed by mixing a polymer containing a plurality of EDOT (3,4-ethylenedioxythiophene monomers) and a plurality of sodium-p-styrene sulfonate (PSS), for example, the PSS is formed by diluting with polar solvents (such as alcohol) and the like, drying for 5 minutes in nitrogen atmosphere at 90-140 ℃ through slot coating, and then drying and forming, wherein the thickness is preferably 100-500 nm; the transparent active layers 32, 42 of the first photovoltaic cell 30 and the second photovoltaic cell 40 may be solvent-diluted P3HT/PCBM, PCPDTBT/PCBM, wherein P3HT/PCBM is a poly (3-hexylthiophene), P3HT (P-type material) polymer semiconductor and a plurality of phenyl-C₆₁Butyric acid methyl ester (phenyl)-C₆₁-butyl acid methyl ester, PCBM (n-type material)), diluted with o-xylene, slit coated, dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere, and dried to form, preferably to a thickness of 100-500 nm.

In the method for manufacturing a composite photovoltaic structure of the present invention, in an implementation mode in which the first photovoltaic unit 30 and the second photovoltaic unit 40 are perovskite photovoltaic units; the transparent electron transport layer of the first photovoltaic unit 30 and the second photovoltaic unit 40 can be formed by slit coating of PEDOT, PSS, Poly (3-hexylthiophene) (P3HT) or Poly (bis (4-phenyl) (2,4, 6-trimethyphenyl) amine) (PTAA), drying at 90-140 ℃ for 5 minutes in nitrogen atmosphere, preferably 100-500 nm; the transparent hole transport layer of the first photovoltaic unit 30 and the second photovoltaic unit 40 can be PDPP3T, wherein PCBM is diluted by a solvent, coated by a slit, dried at 90-140 ℃ for 5 minutes in a nitrogen atmosphere, and dried to form, and the thickness is preferably 1-100 nm; the transparent active layers 32, 42 of the first photovoltaic cell (30) and the second photovoltaic cell 40 can be formed of CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or a combination of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm.

In the method for manufacturing a composite photovoltaic structure of the present invention, in an implementation mode in which the first photovoltaic unit 30 is an organic photovoltaic unit and the second photovoltaic unit 40 is a perovskite photovoltaic unit; the transparent electron transfer layer of the first photovoltaic unit 30 can be formed by slit coating PEI or PEIE as a main component, drying with hot air at 90-140 ℃ for 3 minutes, and preferably having a thickness of 0.5-10 nm; the transparent hole transport layer of the first photovoltaic unit 30 can be a solvent-diluted PEDOT: PSS (PEDOT: PSS) which is a main component and is formed by mixing a polymer containing a plurality of EDOT (3,4-ethylenedioxythiophene monomers) and a plurality of sodium-p-styrene sulfonate (PSS), for example, the PSS is formed by diluting with polar solvents (such as alcohol) and the like, drying for 5 minutes in nitrogen atmosphere at 90-140 ℃ through slot coating, and then drying and forming, wherein the thickness is preferably 100-500 nm; the transparent active layer 32 of the first photovoltaic unit 30 can beThe material is P3HT/PCBM and PCPDTBT/PCBM diluted by solvent, wherein the P3HT/PCBM is formed by mixing a plurality of poly (3-hexylthiophene) polymer semiconductors and a plurality of phenyl-C61 methyl butyrate (PCBM (n-type material)), is diluted by ortho-xylene, is coated by a slit, is dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere and is dried and formed, and the thickness is preferably 100-500 nm; the transparent electron transport layer of the second photovoltaic unit 40 may be formed by slit coating of PEDOT, PSS, Poly (3-hexylthiophene) (P3HT) or Poly (bis (4-phenyl) (2,4, 6-trimetylphenyl) amine) (PTAA), drying at 90-140 deg.C for 5 minutes in nitrogen atmosphere, and drying to a thickness of 100-500 nm; the transparent hole transfer layer of the second photovoltaic unit 40 can be formed by diluting the main component containing PDPP3T, PCBM, with solvent, coating with slit, drying at 90-140 deg.C under nitrogen atmosphere for 5 min, and drying to form a film with a thickness of 1-100 nm; the transparent active layer 42 of the second photovoltaic unit 40 may be formed of CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or a combination of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm.

In the method for manufacturing a composite photovoltaic structure of the present invention, in an implementation mode in which the first photovoltaic unit 30 is a perovskite photovoltaic unit and the second photovoltaic unit 40 is an organic photovoltaic unit; the transparent electron transport layer of the first photovoltaic unit 30 may be formed by slit coating of PEDOT, PSS, Poly (3-hexylthiophene) (P3HT) or Poly (bis (4-phenyl) (2,4, 6-trimetylphenyl) amine) (PTAA), drying at 90-140 deg.C for 5 minutes in nitrogen atmosphere, and drying to a thickness of 100-500 nm; the transparent hole transfer layer of the first photovoltaic unit 30 may be formed by diluting the main component containing PDPP3T, PCBM, with solvent, coating with slit, drying at 90-140 deg.C under nitrogen atmosphere for 5 min, and drying to form a film with a thickness of 1-100 nm; the transparent active layer (32) of the first photovoltaic cell 30 may be formed of CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or the combination of the components is diluted by a solvent and coated by a slitDrying and forming for 5 minutes at 90-140 ℃ in a nitrogen atmosphere, wherein the thickness is preferably 200-800 nm; the transparent electron transfer layer of the second photovoltaic unit 40 can be formed by slit coating PEI and PEIE as main components, drying with hot air at 90-140 ℃ for 3 minutes, and preferably having a thickness of 0.5-10 nm; the transparent hole transport layer of the second photovoltaic unit 40 can be a solvent-diluted PEDOT: PSS (PEDOT: PSS) which is a main component and is formed by mixing a polymer containing a plurality of EDOT (3,4-ethylenedioxythiophene monomers) and a plurality of sodium-p-styrene sulfonate (PSS), for example, the PSS is formed by diluting with polar solvents (such as alcohol) and the like, drying for 5 minutes in nitrogen atmosphere at 90-140 ℃ through slot coating, and then drying and forming, wherein the thickness is preferably 100-500 nm; the transparent active layer 42 of the second photovoltaic unit 40 can be solvent-diluted P3HT/PCBM, PCPDTBT/PCBM, wherein the P3HT/PCBM is a poly (3-hexylthiophene), P3HT (P-type material) polymer semiconductor and a poly (phenyl-C)₆₁Butyric acid methyl ester (phenyl-C)₆₁-butyl acid methyl ester, PCBM (n-type material)), diluted with o-xylene, slit coated, dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere, and dried to form, preferably to a thickness of 100-500 nm.

In the manufacturing method of the composite photovoltaic structure of the present invention, the transparent electrode layer material 50 can be formed by ITO, IZO or AZO by evaporation or sputtering on the transparent substrate 20, and the thickness is preferably 50 to 200 nm.

In the method for manufacturing the composite photovoltaic structure of the present invention, the first transparent conductive layer 61 is formed by evaporation of Ag, Au, Pt or Pd, and the thickness is preferably 50 to 200 nm.

In the method for manufacturing the composite photovoltaic structure of the present invention, the second transparent conductive layer 62 is formed by evaporation of Ag, Au, Pt or Pd, and the thickness is preferably 50 to 200 nm.

In the method for manufacturing the composite photovoltaic structure, the first insulating layer (71) and the second insulating layer 72 can be formed by printing and coating a polyester high polymer (Polyesters polymer) and drying the printed and coated polyester high polymer for 10 minutes at a temperature of between 90 and 140 ℃.

Examples 1 to 3, comparative example 1 and the results of the detection. By the above-mentioned compoundAccording to the manufacturing method of the photovoltaic structure and the composite photovoltaic structure, 10 corresponding composite photovoltaic structures (with the length of 2.5cm and the width of 0.5cm) of the embodiments 1-3 are respectively manufactured to be connected in series to form a photovoltaic cell assembly; further, 10 photovoltaic cell modules were formed in series in comparative example 1 using the structure shown in fig. 1 of the prior art. Packaging the battery pack with gas barrier film, irradiating with light source at two sides/surface of the substrate to provide 1000lux illumination environment, and measuring open-circuit voltage (V) and short-circuit current (I/cm) converted per unit area²). The detection results are shown in the table I.

Table one.

In embodiment 1, the first photovoltaic unit 30 and the second photovoltaic unit 40 are organic photovoltaic units; in embodiment 2, the first and second

photovoltaic cells

30, 40 are perovskite photovoltaic cells; in embodiment 3, the first photovoltaic unit 30 is an organic photovoltaic unit and the second photovoltaic unit 40 is a perovskite photovoltaic unit. In comparative example 1, a conventional photovoltaic structure using an organic photovoltaic cell was employed. Obviously, the open circuit voltage and the converted short circuit current per unit area of the embodiments 1 to 3 of the composite photovoltaic structure of the present invention are superior to those of the comparative example 1 of the conventional photovoltaic structure.

Specifically, the composite photovoltaic structure disclosed by the invention is mainly used for the technical characteristics that the first photovoltaic unit and the second photovoltaic unit which are mutually overlapped and connected in parallel are arranged on the transparent substrate, so that the omnibearing light-gathering gain photoelectric reaction area can be greatly increased under the condition of not influencing the thickness of the whole structure, the current quantity is effectively increased, the manufacturing cost is low, and the application requirement of a product with small volume is relatively met.

Claims

1. A composite photovoltaic structure, characterized in that a transparent substrate (20) is provided with a first photovoltaic cell (30), above which first photovoltaic cell (30) is superimposed a second photovoltaic cell (40) connected in parallel with the first photovoltaic cell (30); an upper surface layer (33), (43) and a lower surface layer (31), (41) of the first photovoltaic unit (30) and the second photovoltaic unit (40) are respectively a transparent electron transfer layer and a transparent hole transfer layer, and a transparent active layer (32), (42) is respectively arranged between the upper surface layer (33), (43) and the lower surface layer (31), (41) of the first photovoltaic unit (30) and the second photovoltaic unit (40); wherein:

a first transparent electrode layer (51) and a second transparent electrode layer (52) which form insulation are arranged on the plate surface of the transparent substrate (20), and the first photovoltaic unit (30) is arranged on the second transparent electrode layer (52) in a state that the lower surface layer (31) is contacted with the second transparent electrode layer (52); a first transparent conductive layer (61) electrically connected with the first transparent electrode layer (51) is covered on the upper surface layer (33) of the first photovoltaic unit (30); the second photovoltaic unit (40) is arranged on the first transparent conductive layer (61) in a state that the lower surface layer (41) of the second photovoltaic unit is in contact with the first transparent conductive layer (61); a second transparent conductive layer (62) electrically connected with the second transparent electrode layer (52) is covered on the upper surface layer (43) of the second photovoltaic unit (40); the first transparent conductive layer (61) extends to the first transparent electrode layer (51) along the side surface of the first photovoltaic unit (30), and a first insulating layer (71) is arranged between the side surface of the first photovoltaic unit (30) and the first transparent conductive layer (61); the second transparent conductive layer (62) extends to the second transparent electrode layer (52) along the side surface of the second photovoltaic unit (40), the side surface of the first transparent conductive layer (61) and the side surface of the first photovoltaic unit (30), and a second insulating layer (72) is arranged between the side surface of the second photovoltaic unit (40), the side surface of the first transparent conductive layer (61) and the side surface of the first photovoltaic unit (30) and the second transparent conductive layer (62).

2. The composite photovoltaic structure of claim 1, wherein an optically hardened layer (80) is disposed between the surface of the transparent substrate (20) and the first transparent electrode layer (51) and the second transparent electrode layer (52).

3. Composite photovoltaic structure according to claim 1 or 2, characterized in that the first photovoltaic unit (30) and the second photovoltaic unit (40) are organic photovoltaic units.

4. A composite photovoltaic structure according to claim 1 or 2, characterized in that the first photovoltaic unit (30) and the second photovoltaic unit (40) are perovskite photovoltaic units.

5. A composite photovoltaic structure according to claim 1 or 2, characterized in that the first photovoltaic unit (30) is an organic photovoltaic unit and the second photovoltaic unit (40) is a perovskite photovoltaic unit.

6. A composite photovoltaic structure according to claim 1 or 2, characterized in that the first photovoltaic unit (30) is a perovskite photovoltaic unit and the second photovoltaic unit (40) is an organic photovoltaic unit.

7. Composite photovoltaic structure according to claim 1 or 2, characterized in that the first photovoltaic unit (30) and the second photovoltaic unit (40) are organic photovoltaic units; the transparent electron transfer layers of the first photovoltaic unit (30) and the second photovoltaic unit (40) are PEI or PEIE, and the thickness is 0.5-10 nm; the transparent hole transfer layers of the first photovoltaic unit (30) and the second photovoltaic unit (40) are formed by mixing PEDOT and PSS, and the thickness is 100-500 nm; the transparent active layers (32), (42) of the first photovoltaic unit (30) and the second photovoltaic unit (40) are formed by mixing P3HT and PCBM or PCPDTBT and PCBM, and the thickness is 100-500 nm.

8. A composite photovoltaic structure according to claim 1 or 2, characterized in that the first photovoltaic unit (30) and the second photovoltaic unit (40) are perovskite photovoltaic units; the transparent electron transfer layers of the first photovoltaic unit (30) and the second photovoltaic unit (40) are formed by mixing PEDOT and PSS or P3HT or PTAA, and the thickness is 100-500 nm; the first photovoltaic unit (30) and theThe transparent hole transfer layer of the second photovoltaic unit (40) is formed by mixing PDPP3T and PCBM, and the thickness of the transparent hole transfer layer is 1-100 nm; the transparent active layers (32), (42) of the first photovoltaic cell (30) and the second photovoltaic cell (40) are formed from CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or a combination thereof, and the thickness is 200 to 800 nm.

9. A composite photovoltaic structure according to claim 1 or 2, characterized in that the first photovoltaic unit (30) is an organic photovoltaic unit and the second photovoltaic unit (40) is a perovskite photovoltaic unit; the transparent electron transfer layer of the first photovoltaic unit (30) is PEI or PEIE, and the thickness is 0.5-10 nm; the transparent hole transfer layer of the first photovoltaic unit (30) is formed by mixing PEDOT and PSS, and the thickness is 100-500 nm; the transparent active layer (32) of the first photovoltaic unit (30) is formed by mixing P3HT and PCBM or formed by mixing PCPDTBT and PCBM, and the thickness is 100-500 nm; the transparent electron transfer layer of the second photovoltaic unit (40) is formed by mixing PEDOT and PSS or is formed by P3HT or PTAA, and the thickness is 100-500 nm; the transparent hole transfer layer of the second photovoltaic unit (40) is formed by mixing PDPP3T and PCBM, and the thickness of the transparent hole transfer layer is 1-100 nm; the transparent active layer (42) of the second photovoltaic unit (40) is formed of CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or a combination thereof, and the thickness is 200 to 800 nm.

10. A composite photovoltaic structure according to claim 1 or 2, characterized in that the first photovoltaic unit (30) is a perovskite photovoltaic unit and the second photovoltaic unit (40) is an organic photovoltaic unit; the transparent electron transfer layer of the first photovoltaic unit (30) is formed by mixing PEDOT and PSS or P3HT and PCBM, and the thickness is 100-500 nm; the transparent hole transfer layer of the first photovoltaic unit (30) is formed by mixing PDPP3T and PCBM, and the thickness of the transparent hole transfer layer is 1-100 nm; the transparent active layer (32) of the first photovoltaic cell (30) is formed of CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or a combination thereof, and the thickness is 200 to 800 nm; the transparent electron transfer layer PEI or PEIE of the second photovoltaic unit (40) has a thickness of 0.5-10 nm; the transparent hole transfer layer of the second photovoltaic unit (40) is formed by mixing PEDOT and PSS, and the thickness is 100-500 nm; the transparent active layer (42) of the second photovoltaic unit (40) is formed by mixing P3HT and PCBM or formed by mixing PCPDTBT and PCBM, and the thickness is 100-500 nm.

11. The composite photovoltaic structure according to claim 1 or 2, wherein the first transparent electrode layer (51) and the second transparent electrode layer (52) are ITO, IZO or AZO, and have a thickness of 50 to 200 nm.

12. The composite photovoltaic structure of claim 1 or 2, wherein the first transparent conductive layer (61) is Ag, Au, Pt or Pd with a thickness of 50-200 nm.

13. The composite photovoltaic structure of claim 1 or 2, wherein the second transparent conductive layer (62) is Ag, Au, Pt or Pd with a thickness of 50-200 nm.

14. The composite photovoltaic structure of claim 2, wherein the optically hardened layer (80) is one or a combination of acrylic, epoxy, silicon dioxide, and has a thickness of 1 μm to 5 μm.

15. The composite photovoltaic structure of claim 1 or 2, wherein the first insulating layer (71) and the second insulating layer (72) are polyester high molecular polymers.

16. A method of fabricating a composite photovoltaic structure, comprising the steps of:

a. building a transparent electrode layer material (50), providing a transparent substrate (20), and arranging the transparent electrode layer material (50) with a preset thickness on the surface of the transparent substrate (20);

b. building a first photovoltaic unit (30), sequentially building each layer of material of the first photovoltaic unit (30) on the transparent electrode layer material (50), wherein an upper surface layer (33) and a lower surface layer (31) of the first photovoltaic unit (30) are respectively a transparent electron transfer layer and a transparent hole transfer layer, and a transparent active layer (32) is arranged between the upper surface layer (33) and the lower surface layer (31) of the first photovoltaic unit (30);

c. building a first insulating layer (71), scribing at least one first insulating material channel (21) penetrating through the transparent electrode layer material (50) on the upper surface of the first photovoltaic unit (30), filling insulating material in each first insulating material channel (21), forming the first insulating layer (71) in each first insulating material channel (21), and separating the transparent electrode layer material (50) into a first transparent electrode layer (51) relatively positioned below the first photovoltaic unit (30) and a second transparent electrode layer (52) relatively positioned outside the first photovoltaic unit (30) by each first insulating layer (71);

d. establishing a first transparent conductive layer (61), scribing a first transparent conductive material channel (22) from the upper surface layer (33) of the first photovoltaic unit (30) to the transparent electrode layer material (50) at the side position of each first insulating layer (71), and covering the surface of the upper surface layer (33) of the first photovoltaic unit (30) and each first transparent conductive material channel (22) with a transparent conductive material, so as to form the first transparent conductive layer (61) which is covered on the upper surface layer (33) of the first photovoltaic unit (30) and is electrically connected with the first transparent electrode layer (51) along the side surface of each first insulating layer (71);

e. building a second photovoltaic unit (40), sequentially building materials of each layer of the second photovoltaic unit (40) on the first transparent conducting layer (61) on the top surface of the first photovoltaic unit (30), wherein an upper surface layer (43) and a lower surface layer (41) of the second photovoltaic unit (40) are respectively a transparent electron transfer layer and a transparent hole transfer layer, and a transparent active layer (42) is arranged between the upper surface layer (43) and the lower surface layer (41) of the second photovoltaic unit (40);

f. building a second insulating layer (72), scribing at least one second insulating material channel (23) penetrating to the transparent electrode layer material (50) on the upper surface layer (43) of the second photovoltaic unit (40), and filling insulating material in each second insulating material channel (23) to form the second insulating layer (72) in each second insulating material channel (23);

g. establishing a second transparent conductive layer (62), scribing a second transparent conductive material channel (24) from the upper surface layer (43) of the second photovoltaic unit (40) to the transparent electrode layer material (50) at the side position of each second insulating layer (72), and covering the surface of the upper surface layer (43) of the second photovoltaic unit (40) and each second transparent conductive material channel (24) with a transparent conductive material, so as to form the second transparent conductive layer (62) which is covered on the upper surface layer (43) of the second photovoltaic unit (40) and is electrically connected with the second transparent electrode layer (52) along the side surface of each second insulating layer (72);

h. and (3) scribing a cutting channel (25) penetrating through the transparent electrode layer material (50) on the surface of the second transparent conductive layer (62) to form a finished product partition, and further partitioning the finished product partition from the transparent substrate (20) to build and form at least one composite photovoltaic structure which is overlapped above the first photovoltaic unit (30) and is connected with the second photovoltaic unit (40) in parallel.

17. The method according to claim 16, wherein an optically hardened layer (80) is disposed on the surface of the transparent substrate (20), and the transparent electrode layer material (50) is disposed on the optically hardened layer (80).

18. Method for manufacturing a composite photovoltaic structure according to claim 16 or 17, characterized in that the first photovoltaic unit (30) and the second photovoltaic unit (40) are organic photovoltaic units.

19. A method of fabricating a composite photovoltaic structure according to claim 16 or 17, wherein the first photovoltaic unit (30) and the second photovoltaic unit (40) are perovskite photovoltaic units.

20. A method of fabricating a composite photovoltaic structure according to claim 16 or 17, wherein the first photovoltaic unit (30) is an organic photovoltaic unit and the second photovoltaic unit (40) is a perovskite photovoltaic unit.

21. A method of fabricating a composite photovoltaic structure according to claim 16 or 17, wherein the first photovoltaic unit (30) is a perovskite photovoltaic unit and the second photovoltaic unit (40) is an organic photovoltaic unit.

22. A method of fabricating a composite photovoltaic structure according to claim 16 or 17, wherein the first photovoltaic unit (30) and the second photovoltaic unit (40) are organic photovoltaic units; the transparent electron transfer layers of the first photovoltaic unit (30) and the second photovoltaic unit (40) are formed by coating PEI or PEIE through a slit, drying the coated PEI or PEIE for 3 minutes by hot air at the temperature of 90-140 ℃, and then forming the PEI or PEIE with the thickness of 0.5-10 nm; the transparent hole transfer layers of the first photovoltaic unit (30) and the second photovoltaic unit (40) are prepared by mixing PEDOT and PSS diluted by solvents, drying for 5 minutes in a nitrogen atmosphere at 90-140 ℃ after being diluted by alcohols, and drying for forming, wherein the thickness is 100-500 nm; the transparent active layers (32, 42) of the first photovoltaic unit (30) and the second photovoltaic unit (40) are P3HT and PCBM mixed or PCPDTBT and PCBM mixed diluted by solvent, are diluted by o-xylene, are dried for 3 minutes at 90-140 ℃ in nitrogen atmosphere, and are dried and formed, and the thickness is 100-500 nm.

23. A method of fabricating a composite photovoltaic structure according to claim 16 or 17, wherein the first photovoltaic unit (30) and the second photovoltaic unit (40) are perovskite photovoltaic units; the transparent electron transfer layers of the first photovoltaic unit (30) and the second photovoltaic unit (40) are formed by mixing PEDOT and PSS or P3HT or PTAA, are dried for 5 minutes at 90-140 ℃ in a nitrogen atmosphere after slit coating, and are dried and formed, and the thickness is 100-500 nm; the transparent hole transfer layers of the first photovoltaic unit (30) and the second photovoltaic unit (40) are formed by mixing PDPP3T and PCBM, diluting the mixture with a solvent, coating the mixture with a slit, drying the coated mixture for 5 minutes in a nitrogen atmosphere at 90-140 ℃, and drying the coated mixture for forming, wherein the thickness of the formed mixture is 1-100 nm; the first lightThe transparent active layers (32), (42) of the photovoltaic cell (30) and the second photovoltaic cell (40) are formed from CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or the combination of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is 200-800 nm.

24. A method of fabricating a composite photovoltaic structure according to claim 16 or 17, wherein the first photovoltaic unit (30) is an organic photovoltaic unit and the second photovoltaic unit (40) is a perovskite photovoltaic unit; the transparent electron transfer layer of the first photovoltaic unit (30) is formed by coating PEI or PEIE through a slit, drying the coated PEI or PEIE for 3 minutes at 90-140 ℃ by hot air, and forming the PEI or PEIE with the thickness of 0.5-10 nm; the transparent hole transfer layer of the first photovoltaic unit (30) is formed by mixing PEDOT and PSS diluted by a solvent, drying for 5 minutes in a nitrogen atmosphere at 90-140 ℃ after being diluted by alcohols, and drying to form the transparent hole transfer layer with the thickness of 100-500 nm; the transparent active layer (32) of the first photovoltaic unit (30) is formed by mixing P3HT and PCBM or mixing PCPDTBT and PCBM diluted by a solvent, drying for 3 minutes in a nitrogen atmosphere at 90-140 ℃ after diluting with o-xylene and coating by a slit, and drying to form the transparent active layer, wherein the thickness of the transparent active layer is 100-500 nm; the transparent electron transfer layer of the second photovoltaic unit (40) is formed by mixing PEDOT and PSS or drying P3HT or PTAA for 5 minutes at 90-140 ℃ in a nitrogen atmosphere after slit coating, and the thickness is 100-500 nm; the transparent hole transfer layer of the second photovoltaic unit (40) is formed by mixing PDPP3T and PCBM, diluting the mixture with a solvent, coating the mixture with a slit, drying the coated mixture for 5 minutes in a nitrogen atmosphere at 90-140 ℃, and drying the coated mixture to form the transparent hole transfer layer with the thickness of 1-100 nm; the transparent active layer (42) of the second photovoltaic unit (40) is formed of CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or the combination of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is 200-800 nm.

25. A method of fabricating a composite photovoltaic structure according to claim 16 or 17, wherein the method comprises forming a composite photovoltaic structureIn that the first photovoltaic unit (30) is a perovskite photovoltaic unit and the second photovoltaic unit (40) is an organic photovoltaic unit; the transparent electron transfer layer of the first photovoltaic unit (30) is formed by mixing PEDOT and PSS or drying P3HT or PTAA for 5 minutes at 90-140 ℃ in a nitrogen atmosphere after slit coating, and the thickness is 100-500 nm; the transparent hole transfer layer of the first photovoltaic unit (30) is formed by mixing PDPP3T and PCBM, diluting the mixture with a solvent, coating the mixture with a slit, drying the coated mixture for 5 minutes in a nitrogen atmosphere at 90-140 ℃, and drying the coated mixture to form the transparent hole transfer layer with the thickness of 1-100 nm; the transparent active layer (32) of the first photovoltaic cell (30) is formed of CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or the combination of the components is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is 200-800 nm; the transparent electron transfer layer of the second photovoltaic unit (40) is formed by coating PEI or PEIE through a slit, drying the coated PEI or PEIE for 3 minutes by hot air at the temperature of 90-140 ℃, and then forming the PEI or PEIE with the thickness of 0.5-10 nm; the transparent hole transfer layer of the second photovoltaic unit (40) is formed by mixing PEDOT and PSS diluted by a solvent, drying for 5 minutes in a nitrogen atmosphere at 90-140 ℃ after being diluted by alcohols, and drying to form the transparent hole transfer layer with the thickness of 100-500 nm; the transparent active layer (42) of the second photovoltaic unit (40) is formed by mixing P3HT and PCBM or mixing PCPDTBT and PCBM diluted by a solvent, drying for 3 minutes at 90-140 ℃ in a nitrogen atmosphere after diluting with o-xylene and coating, and drying to form the transparent active layer with the thickness of 100-500 nm.

26. The method of claim 16 or 17, wherein the transparent electrode layer material (50) is formed by evaporating or sputtering ITO, IZO or AZO onto the transparent substrate (20) to a thickness of 50-200 nm.

27. The method according to claim 16 or 17, wherein the first transparent conductive layer (61) is Ag, Au, Pt or Pd with a thickness of 50-200 nm.

28. The method according to claim 16 or 17, wherein the second transparent conductive layer (62) is formed by evaporation of Ag, Au, Pt or Pd and has a thickness of 50-200 nm.

29. The method of claim 17, wherein the optical hardening layer (80) is one or a combination of acryl, epoxy, silicon dioxide, and has a thickness of 1 μm to 5 μm.

30. The method according to claim 16 or 17, wherein the first insulating layer (71) and the second insulating layer (72) are formed by printing and coating a polyester high molecular polymer, and drying the polyester high molecular polymer with hot air at 90-140 ℃ for 10 minutes.