CN112051523A - Magnetic field sensing device - Google Patents
Magnetic field sensing device Download PDFInfo
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- CN112051523A CN112051523A CN201910486900.4A CN201910486900A CN112051523A CN 112051523 A CN112051523 A CN 112051523A CN 201910486900 A CN201910486900 A CN 201910486900A CN 112051523 A CN112051523 A CN 112051523A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/091—Constructional adaptation of the sensor to specific applications
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Abstract
The invention provides a magnetic field sensing device, which comprises a plurality of magnetoresistive sensors, a detection magnetic field generating element, a plurality of magnetic field direction setting elements and a current generator. Each magnetoresistive sensor has a major axis and a minor axis that are perpendicular to each other. The current generator is used for selectively applying a first current to the detection magnetic field generating element so as to enable the detection magnetic field generating element to generate reference magnetic fields for the magnetoresistive sensors. The magnetic field direction of the reference magnetic field is parallel to the short axis. The current generator is used for selectively applying a second current to enable the magnetic field direction setting elements to generate a plurality of setting magnetic fields for the magnetoresistive sensors. The magnetic field direction of each set magnetic field is parallel to the long axis.
Description
Technical Field
The present invention relates to a magnetic field sensing device, and more particularly, to a magnetic field sensing device with a self-built detection magnetic field generating element.
Background
With the development of science and technology, electronic products with navigation and positioning functions are becoming more and more diversified. Electronic compasses provide functionality comparable to conventional compasses in the fields of automotive navigation, aviation, and personal hand-held device applications. In order to realize the function of the electronic compass, the magnetic field sensing device becomes a necessary electronic component.
When the magnetic field sensing device is completed, it is usually sent to a detection system for calibration. However, if a plurality of magnetic field devices are to be detected at once by generating a detection magnetic field in a wide range, the detection system needs a large volume and requires a large current. In addition, a large amount of transportation and detection time is required in the detection process, which increases the production cost and time of the magnetic field sensing device.
Disclosure of Invention
The invention provides a magnetic field sensing device which has a self-detection function and lower production cost.
In one embodiment, a magnetic field sensing apparatus includes a plurality of magnetoresistive sensors, a detection magnetic field generating element, a plurality of magnetic field direction setting elements, and a current generator. Each magnetoresistive sensor has a first major axis and a first minor axis that are perpendicular to each other. The detection magnetic field generating element is disposed beside the magnetoresistive sensors and is disposed to overlap the magnetoresistive sensors. The magnetic field direction setting elements are arranged beside the magnetoresistive sensors and are overlapped with the magnetoresistive sensors. The current generator is used for selectively applying a first current to the detection magnetic field generating element so as to enable the detection magnetic field generating element to generate reference magnetic fields for the magnetoresistive sensors. The current generator is used for selectively applying a second current to enable the magnetic field direction setting elements to generate a plurality of setting magnetic fields for the magnetoresistive sensors. The magnetic field direction of each set magnetic field is parallel to the first long axis of each magnetoresistive sensor.
In an embodiment of the invention, the detecting magnetic field generating element includes a plurality of conductors, and the plurality of conductors are disposed in parallel with each other. Each conductor further includes a second major axis and a second minor axis perpendicular to each other, and the second major axis is parallel to the first major axis of the magnetoresistive sensor.
In an embodiment of the invention, the detecting magnetic field generating element includes a plurality of conductor sets. Each conductor set also includes a plurality of conductors arranged in parallel with one another. Each conductor further includes a second major axis and a second minor axis perpendicular to each other, and the second major axis is parallel to the first major axis of the magnetoresistive sensor. These conductor sets are arranged in series with each other.
In an embodiment of the present invention, in each conductor set, an orthogonal projection range is defined and covers all conductors in the corresponding conductor set. These forward projection ranges do not overlap each other.
In an embodiment of the present invention, in each conductor set, an orthogonal projection range is defined and covers all conductors of the corresponding conductor set. The orthogonal projection ranges are overlapped with each other pairwise.
In an embodiment of the invention, the plurality of conductor sets includes at least one first conductor set and at least one second conductor set. The plurality of conductors within the first conductor set is a plurality of first conductors. The plurality of conductors within the second conductor set is a plurality of first conductors. The first conductors and the second conductors are arranged to cross each other.
In an embodiment of the invention, the conductor sets include a single first conductor set and a single second conductor set.
In an embodiment of the invention, the conductor sets include a plurality of first conductor sets and a plurality of second conductor sets.
In an embodiment of the invention, each of the magnetic field direction setting elements has a third major axis and a third minor axis perpendicular to each other. The third long axis is perpendicular to the first long axis of the magnetoresistive sensor. The magnetoresistive sensors further include a plurality of first magnetoresistive sensors disposed in parallel and a plurality of second magnetoresistive sensors disposed in parallel. Each first magnetoresistive sensor is arranged in series with a corresponding second magnetoresistive sensor. The magnetic field direction setting elements further include a first magnetic field direction setting element and a second magnetic field direction setting element. The first magnetic field direction setting element is disposed to overlap with the first magnetoresistive sensors, and the second magnetic field direction setting element is disposed to overlap with the second magnetoresistive sensors.
In an embodiment of the invention, the magnetic field direction setting elements are disposed between the magnetoresistive sensors and the detection magnetic field generating element.
In an embodiment of the invention, the magnetic field sensing device further includes a first insulating layer and a second insulating layer. A first insulating layer is located between the magnetoresistive sensors and the magnetic field direction setting elements. The second insulating layer is located between the magnetic field direction setting elements and the detection magnetic field generating element.
In an embodiment of the invention, the magnetoresistive sensor is a heterogeneous magnetoresistive sensor.
Based on the above, in the magnetic field sensing device according to the embodiment of the invention, the detection magnetic field generating element generates the reference magnetic field for the magnetoresistive sensor, and the reference magnetic field can be used to correct the sensitivity and orthogonality of the magnetoresistive sensor, so that the magnetic field sensing device can achieve the self-detection function.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and together with the description serve to explain the principles of the invention.
Fig. 1 is a schematic top view of a magnetic field sensing device according to an embodiment of the invention.
Fig. 2 is a schematic cross-sectional view of section a-a' in fig. 1.
FIGS. 3A and 3B illustrate different layout methods of the anisotropic magnetoresistive sensor of FIG. 1.
Fig. 4 to 6 are schematic circuit layouts of the detecting magnetic field setting element according to different embodiments of the present invention.
Description of the reference numerals
100: a magnetic field sensing device;
110: magnetoresistive sensors, anisotropic magnetoresistive sensors;
112: a first magnetoresistive sensor;
114: a second magnetoresistive sensor;
120. 120a to 120 c: a detection magnetic field generating element;
130: a magnetization direction setting element;
132: a first magnetization direction setting element;
134: a second magnetization direction setting element;
140: a current generator;
150. 160: an insulating layer;
A-A': a section;
c: a conductor;
c1: a first conductor;
c2: a second conductor;
CS: a conductor set;
CS1, CS1b, CS1 c: a first conductor set;
CS2, CS2b, CS2 c: a second conductor set;
d: a direction of extension;
D1-D3: direction;
FF: a ferromagnetic film;
h: an external magnetic field;
HM: setting a magnetic field;
HR: a reference magnetic field;
m: a magnetization direction;
PR, PR1, PR2, PR1b, PR2 b: a forward projection range;
SB: a shorting bar;
SD: sensing a direction;
i: current flow;
I1: a first current;
I1/2: half of the first current;
I2: a second current.
Detailed Description
Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
For convenience of describing the configuration of the magnetic field sensing device according to the embodiment of the present invention, the magnetic field sensing device can be regarded as being located in a space formed by the direction D1, the direction D2 and the direction D3, wherein two directions D1, D2 and D3 are perpendicular to each other.
Fig. 1 is a schematic top view of a magnetic field sensing device according to an embodiment of the invention. Fig. 2 is a schematic cross-sectional view of section a-a' in fig. 1. FIGS. 3A and 3B illustrate different layout methods of the anisotropic magnetoresistive sensor of FIG. 1.
Referring to fig. 1 and fig. 2, in the present embodiment, the magnetic field sensing apparatus 100 includes a plurality of magnetoresistive sensors 110, a magnetic field detection generating element 120, a plurality of magnetization direction setting elements 130, a current generator 140, and a plurality of insulating layers 150 and 160. The above elements are described in detail in the following paragraphs.
The magnetoresistive sensor 110 in the embodiment of the present invention is a sensor whose resistance can be changed correspondingly by a change in an external magnetic field. The magnetoresistive sensor 110 may be an Anisotropic magnetoresistive sensor (AMR resistor). Each of the magnetoresistive sensors 110 has a first major axis and a first minor axis perpendicular to each other, wherein the first major axis (not labeled) and the first minor axis (not labeled) are parallel to the directions D1 and D2, respectively. Referring to fig. 3A and 3B, the anisotropic magnetoresistive sensor 110 has, for example, a barber pole (barber pole) structure, that is, a plurality of short-circuit bars (electrical short bars) SB extending at an angle of 45 degrees with respect to the extending direction D of the anisotropic magnetoresistive sensor 110 are disposed on the surface of the anisotropic magnetoresistive sensor 110, the short-circuit bars SB are spaced apart from each other and are parallel to each other and are disposed on a ferromagnetic film (ferromagnetic film) FF, which is a main body of the anisotropic magnetoresistive sensor 110, and the extending direction of the ferromagnetic film FF is the extending direction of the anisotropic magnetoresistive sensor 110. The sensing direction SD of the anisotropic magnetoresistive sensor 110 is perpendicular to the extending direction D. In addition, opposite ends of the ferromagnetic film FF may be made to be pointed (tapered).
In the embodiment of the present invention, the detecting magnetic field generating element 120 and the magnetic field direction setting element 130 are any one or a combination of a coil, a wire, a metal sheet, a conductor that can generate a magnetic field by being energized. The detection magnetic field generation element 120 is, for example, a detection magnetic field generation coil. In the present embodiment, the detecting magnetic field generating element 120 includes a plurality of conductors C arranged in parallel, for example, two conductors C, but not limited thereto. Each conductor C has a second major axis (not labeled) and a second minor axis (not labeled) perpendicular to each other, wherein the second major axis and the second minor axis are parallel to the directions D1 and D2, respectively. On the other hand, the magnetic field direction setting element 130 is, for example, a metal conductive plate, and the number of the magnetic field direction setting elements is, for example, two, and these two magnetic field direction setting elements 130 are referred to as a first magnetic field direction setting element 132 and a second magnetic field direction setting element 134, respectively. Each magnetic field direction setting element has a third major axis (not labeled) and a third minor axis (not labeled) perpendicular to each other, wherein the third major axis and the third minor axis are parallel to the directions D2 and D1, respectively.
The "major axis" is defined as a reference axis parallel to the long sides of the element and passing through the center of the element, while the "minor axis" is defined as another reference axis parallel to the short sides of the element and passing through the center of the element.
In the embodiment of the present invention, the current generator 140 refers to an electronic device for providing current.
In the embodiment of the present invention, the material of the insulating layers 150 and 160 is, for example, silicon dioxide, aluminum oxide, aluminum nitride, silicon nitride, or other materials with insulating function, which is not limited in the invention.
To illustrate the configuration effect of the magnetic field sensing apparatus 100 of the present embodiment, the following paragraphs will first describe the basic principle of the magnetic field sensing apparatus 100 of the present embodiment for measuring magnetic field.
The anisotropic magnetoresistive sensor 110 may set the magnetization direction of the external magnetic field H by the magnetization direction setting element 130 before the measurement of the external magnetic field H is started. In fig. 3A, the magnetization direction setting element 130 can generate a magnetic field along the extending direction D (or the long axis direction) by applying a current, so that the anisotropic magnetoresistive sensor 110 has a magnetization direction M.
Then, the magnetization direction setting element 130 is not energized, so that the anisotropic magnetoresistive sensor 110 starts measuring the external magnetic field H. When there is no external magnetic field H, the magnetization direction M of the anisotropic magnetoresistive sensor 110 is maintained in the extension direction D, and the current generator 140 can apply a current I to flow from the left end to the right end of the anisotropic magnetoresistive sensor 110, so that the current I near the shorting bar SB flows perpendicular to the extension direction of the shorting bar SB, and the current I near the shorting bar SB flows at an angle of 45 degrees to the magnetization direction M, and the resistance value of the anisotropic magnetoresistive sensor 110 is R.
When an external magnetic field H is oriented in a direction perpendicular to the extending direction D, the magnetization direction M of the anisotropic magnetoresistive sensor 110 is deflected outward in the direction of the magnetic field H, so that an included angle between the magnetization direction and the current I flowing direction near the shorting bar is greater than 45 degrees, and the resistance value of the anisotropic magnetoresistive sensor 110 changes by- Δ R, i.e., becomes R- Δ R, that is, the resistance value becomes smaller, where Δ R is greater than 0.
However, as shown in fig. 3B, when the extending direction of the shorting bar SB in fig. 3B is located at an angle of 90 degrees with respect to the extending direction of the shorting bar SB in fig. 3A (at this time, the extending direction of the shorting bar SB in fig. 3B is still 45 degrees with respect to the extending direction D of the anisotropic magnetoresistive sensor 110), and when there is an external magnetic field H, the magnetization direction M is still deflected outward in the direction of the magnetic field H by the magnetic field H, and at this time, the angle between the magnetization direction M and the current I flowing direction near the shorting bar SB is smaller than 45 degrees, so the resistance value of the anisotropic magnetoresistive sensor 110 becomes R + Δ R, that is, the resistance value of the anisotropic magnetoresistive sensor 110 becomes larger.
When the magnetization direction M of the anisotropic magnetoresistive sensor 110 is set to the reverse direction shown in fig. 3A by the magnetization direction setting element 130, the resistance value of the anisotropic magnetoresistive sensor 110 of fig. 3A under the external magnetic field H becomes R + Δ R thereafter. When the magnetization direction M of the anisotropic magnetoresistive sensor 110 is set to the reverse direction shown in fig. 3B by the magnetization direction setting element 130, the resistance value of the anisotropic magnetoresistive sensor 110 of fig. 3B under the external magnetic field H becomes R- Δ R thereafter.
Therefore, in the present embodiment, the magnetic field sensing apparatus 100 forms a wheatstone bridge by four magneto-resistive sensors 110, for example, and a person skilled in the art can correspondingly measure a signal of a magnetic field component of the external magnetic field H in a specific direction according to the magneto-resistive sensors 110 and the above or other different circuit designs and the resistance variation of the magneto-resistive sensors 110 caused by the external magnetic field. In other embodiments, not shown, the magnetic field sensing device includes more than four magneto-resistive sensors 110, for example, to form a plurality of wheatstone full bridges or half bridges, so as to measure signals of magnetic field components of the external magnetic field H in different specific directions. Alternatively, in some embodiments, the magnetic field sensing device includes one to three magnetic sensors 110, and in these embodiments, the magnetic field sensing device can obtain the change of the magnetic field by generating a response signal from the respective magnetic sensors 110 to the change of the external magnetic field H. The present invention is not limited by the number of magnetoresistive sensors 120 and their circuit design.
The following paragraphs will describe the configuration and corresponding effects of the elements in the magnetic field sensing device 100 of the present embodiment in detail.
Referring to fig. 1 and fig. 2, in the present embodiment, the detecting magnetic field generating element 120 is disposed beside the magnetoresistive sensors 110 and overlapped with the magnetoresistive sensors 110. Specifically, the first major axis and the first minor axis of each magnetoresistive sensor 110 are respectively disposed parallel to the second major axis and the second minor axis of the corresponding conductor C of the detection magnetic field generation element 120, and each magnetoresistive sensor 110 falls within the orthogonal projection range of the corresponding conductor C. The current generator 140 may selectively apply a first current I to the detection magnetic field generation element 1201So that the conductors C generate a reference magnetic field H with a magnetic field direction D2 for the magnetoresistive sensors 110R. That is to say the reference magnetic field HRIs parallel to the first short axis of the magnetoresistive sensor 110. The reference magnetic field HRIs the same as the sensing direction of each magnetoresistive sensor 110 and is used to correct the Sensitivity (Sensitivity) and Orthogonality (Orthogonality) of each magnetoresistive sensor 110.
The magnetic field direction setting elements 130 are disposed beside the magnetoresistive sensors 110, and each magnetic field direction setting element 130 is disposed to overlap with the corresponding magnetoresistive sensor 110 and the detection magnetic field generating element 120. Specifically, the third major axis and the third minor axis of each magnetic field direction setting element 130 are arranged in parallel with the first minor axis (or the second minor axis) and the first major axis (or the second major axis) of the magnetoresistive sensor 110 (or the conductor C), respectively. Furthermore, according to the above paragraphs, the magnetization directions of the magnetoresistive sensors 110 need to be set before the magnetic field sensing apparatus 100 measures the magnetic field. The magnetoresistive sensors 110 may be divided into a plurality of first magnetoresistive sensors 112 and a plurality of second magnetoresistive sensors 114. These first and second magnetoresistive sensors 112 and 114 are provided to overlap the first and second magnetization direction setting elements 132 and 134, respectively. Each first magnetoresistive sensor 112 is coupled in series with a corresponding second magnetoresistive sensor 114 to form a bridge arm of a Wheatstone bridge.
When the current generator 140 applies the second current I to the first and second magnetization direction setting elements 132, 1342At this time, the first and second magnetization direction setting elements 132 and 134 generate a plurality of setting magnetic fields H having a magnetic field direction D1 or a direction opposite thereto for the magnetoresistive sensors 110M. That is, these set magnetic fields HMIs parallel to the first long axis of each magnetoresistive sensor 110. Since these magnetization direction setting elements 132, 134 are arranged in an S-shaped circuit loop, the second current I2The currents in the first and second magnetization direction setting elements 132 and 134 flow in Anti-parallel (Anti-parallel) to each other, and these set magnetic fields HMAre also anti-parallel to each other. Thus, the first magnetization direction setting element 132 may set the magnetization directions of the first magnetoresistive sensors 112 to the direction D1, and the second magnetization direction setting element 134 may set the magnetization directions of the second magnetoresistive sensors 114 to the opposite direction of the direction D1.
Referring to fig. 2, in the present embodiment, the insulating layer 150 is located between the magnetoresistive sensors 110 and the magnetic field direction setting elements 130, and the insulating layer 150 covers the magnetic field direction setting elements 130. The insulating layer 160 is located between the magnetic field direction setting elements 130 and the detection magnetic field generation element 120.
As mentioned above, in the magnetic field sensing device 100 of the present embodiment, the detecting magnetic field generating element 120 is disposed beside the magnetoresistive sensors 110 and overlapped with the magnetoresistive sensors 110. The detecting magnetic field generating element 120 may be applied with a first current I by the current generator 1401And a reference magnetic field H is generated for the magnetoresistive sensors parallel to the short axis direction of the magnetoresistive sensor 110RThe reference magnetic field HRThe magnetic field sensing device 100 can be used to calibrate the sensitivity and orthogonality of the magnetic sensors 110, so that the magnetic field sensing device 100 can perform a self-test function. Moreover, since the magnetic field generating element 120 is disposed beside the magnetoresistive sensors 110 and the distance between the two is relatively close, the current required by the magnetic field generating element 120 does not need to be too large to generate a reference with sufficient strengthMagnetic field HRThat is, it does not need to consume much energy in the detection process.
Meanwhile, the magnetic field sensing device 100 is suitable for detection by a standard probe System (standard probing System), which has high yield and short detection time, so that the overall production cost and production time of the magnetic field sensing device 100 can be reduced.
It should be noted that, the following embodiments follow the contents of the foregoing embodiments, descriptions of the same technical contents are omitted, reference may be made to the contents of the foregoing embodiments for the same element names, and repeated descriptions of the following embodiments are omitted.
Fig. 4 to 6 are schematic circuit layouts of the detecting magnetic field setting element according to different embodiments of the present invention.
Referring to fig. 4, the detected magnetic field setting element 120a of fig. 4 is similar to the detected magnetic field setting element 120 of fig. 1, and the main differences are: the detection magnetic field setting element 120a includes a plurality of conductor sets CS. Each conductor set CS includes conductors C arranged in parallel with each other. These conductor sets CS are in turn arranged in series with one another. In the present embodiment, the number of the conductor sets is two, which are respectively referred to as the first and second conductor sets CS1 and CS2, and the conductors C in the first and second conductor sets CS1 and CS2 are respectively referred to as the first and second conductors C1 and C2. The number of the first and second conductor sets CS1 and CS2 conductor C is four, but the number of the conductor sets and the number of the conductors are not limited in the present invention. In addition, in the present embodiment, each conductor set CS can define an orthogonal projection range PR, wherein the orthogonal projection range PR is defined in a manner, for example, in the direction D3, covering the orthogonal projection ranges of the plurality of conductors C corresponding to the conductor set CS. For example, the forward projection range PR1 covers all of the first conductors C1 in the first conductor set CS1, and the forward projection range PR2 covers all of the second conductors C2 in the second conductor set CS 2. In the present embodiment, the forward projection ranges PR do not overlap with each other.
Referring to fig. 5, the detecting magnetic field setting device 120b of fig. 5 is similar to the detecting magnetic field setting device 120a of fig. 4, and the main differences are: the plurality of orthogonal projection ranges PR defined by the plurality of conductor sets CS overlap each other two by two. Specifically, the plurality of conductor groups CS includes, for example, a single first conductor group CS1b (two first conductors C1 indicated by solid lines) and a single second conductor group CS2b (two second conductors C2 indicated by broken lines). For clarity, the wires directly connected to the first conductor set CS1b and themselves are shown in solid lines, while the wires directly connected to the second conductor set CS2b and themselves are shown in dashed lines. The first and second orthogonal projection ranges PR1b and PR2b respectively defined by the first and second conductor sets CS1b and CS2b overlap with each other. In the embodiment, the first and second conductor sets CS1b and CS2b respectively have two numbers of first and second conductors C1 and C2, but the invention is not limited thereto. In addition, in other embodiments, which are not shown, the detecting magnetic field setting element may further have a third conductor set, and the third orthogonal projection range defined by the third conductor set is, for example, overlapped with the second orthogonal projection range.
Referring to fig. 5, from another perspective, the first and second conductors C1 and C2 of the first and second conductor sets CS1b and CS2b are arranged to cross each other to form an interdigitated arrangement. Specifically, a second conductor C2 is sandwiched between any two adjacent first conductors C1, and a first conductor C1 is sandwiched between any two adjacent second conductors C2.
Referring to fig. 6, the detecting magnetic field setting device 120c of fig. 6 is similar to the detecting magnetic field setting device 120b of fig. 5, and the main differences are: the number of the first conductor sets CS1c is plural (for example, three), and the number of the second conductor sets CS2c is also plural (for example, three). For clarity, the wires directly connected to the first conductor set CS1c and themselves are shown in solid lines, while the wires directly connected to the second conductor set CS2c and themselves are shown in dashed lines. In the present embodiment, the first conductor sets CS1c are connected in series first and then connected in series with the second conductor sets CS2 c.
In summary, in the magnetic field sensing apparatus according to the embodiment of the invention, the detection magnetic field generating element is disposed beside the plurality of magnetoresistive sensors and overlapped with the plurality of magnetoresistive sensors. The detection magnetic field generating element can be applied with a first current by the current generator to generate a reference magnetic field parallel to the short axis direction of the magnetic resistance sensors, and the reference magnetic field can be used for calibrating the sensitivity and the orthogonality of the magnetic resistance sensors, so that the magnetic field sensing device can realize the self-detection function. In addition, because the detection magnetic field generating element is arranged beside the magnetoresistive sensors, the detection magnetic field generating element and the magnetoresistive sensors are quite close to each other, the current required by the detection magnetic field generating element does not need to be too large, a reference magnetic field with enough strength can be generated, and the energy consumption of the detection process is low.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (12)
1. A magnetic field sensing device, comprising:
a plurality of magnetoresistive sensors, each magnetoresistive sensor having a first major axis and a first minor axis that are perpendicular to each other;
a detection magnetic field generating element provided beside the plurality of magnetoresistive sensors and overlapping the plurality of magnetoresistive sensors;
a plurality of magnetic field direction setting elements provided beside the plurality of magnetoresistive sensors and overlapping the plurality of magnetoresistive sensors; and
a current generator, wherein,
the current generator is configured to selectively apply a first current to the detection magnetic field generating element to cause the detection magnetic field generating element to generate a reference magnetic field for the plurality of magnetoresistive sensors, wherein a magnetic field direction of the reference magnetic field is parallel to the first short axis of each of the magnetoresistive sensors,
and the current generator is used for selectively applying a second current to enable the plurality of magnetic field direction setting elements to generate a plurality of setting magnetic fields for the plurality of magnetoresistive sensors, wherein the magnetic field direction of each setting magnetic field is parallel to the first long axis of each magnetoresistive sensor.
2. The magnetic field sensing device according to claim 1, wherein,
the detection magnetic field generation element includes a plurality of conductors, and the plurality of conductors are arranged in parallel with each other,
wherein each of the conductors further comprises a second major axis and a second minor axis that are perpendicular to each other, and the second major axis is parallel to the first major axis of the magnetoresistive sensor.
3. The magnetic field sensing device according to claim 1, wherein,
the detecting magnetic field generating element comprises a plurality of conductor sets, each conductor set further comprises a plurality of conductors which are arranged in parallel, each conductor further comprises a second long axis and a second short axis which are perpendicular to each other, the second long axis is parallel to the first long axis of the magnetoresistive sensor, and the conductor sets are arranged in series.
4. The magnetic field sensing device according to claim 3, wherein,
in each of the conductor sets, an orthographic projection range is defined and covers all conductors within the corresponding conductor set,
wherein the plurality of forward projection ranges do not overlap with each other.
5. The magnetic field sensing device according to claim 3, wherein,
in each of the conductor sets, an orthogonal projection range is defined and covers all conductors of the corresponding conductor set,
wherein, the plurality of orthographic projection ranges are mutually overlapped pairwise.
6. The magnetic field sensing device according to claim 3, wherein,
the plurality of conductor sets include at least one first conductor set and at least one second conductor set, the plurality of conductors in the first conductor set are a plurality of first conductors, the plurality of conductors in the second conductor set are a plurality of first conductors,
wherein the plurality of first conductors and the plurality of second conductors are arranged to cross each other.
7. The magnetic field sensing device according to claim 6, wherein the plurality of conductor sets comprises a single first conductor set and a single second conductor set.
8. The magnetic field sensing device according to claim 6, wherein the plurality of conductor sets comprises a plurality of first conductor sets and a plurality of second conductor sets.
9. The magnetic field sensing device according to claim 1, wherein,
each of the magnetic field direction setting elements has a third major axis and a third minor axis perpendicular to each other, wherein the third major axis is perpendicular to the first major axis of the magnetoresistive sensor,
the plurality of magnetoresistive sensors further comprises a plurality of first magnetoresistive sensors arranged in parallel and a plurality of second magnetoresistive sensors arranged in parallel, wherein each first magnetoresistive sensor is arranged in series with the corresponding second magnetoresistive sensor,
the plurality of magnetic field direction setting elements further comprises a first magnetic field direction setting element and a second magnetic field direction setting element,
wherein the first magnetic field direction setting element is disposed to overlap with the plurality of first magnetoresistive sensors, and the second magnetic field direction setting element is disposed to overlap with the plurality of second magnetoresistive sensors.
10. The magnetic field sensing device according to claim 1, wherein the plurality of magnetic field direction setting elements are disposed between the plurality of magnetoresistive sensors and the detection magnetic field generating element.
11. The magnetic field sensing device according to claim 1, further comprising a first insulating layer and a second insulating layer,
the first insulating layer is located between the plurality of magnetoresistive sensors and the plurality of magnetic field direction setting elements,
and the second insulating layer is located between the plurality of magnetic field direction setting elements and the detection magnetic field generating element.
12. The magnetic field sensing device according to claim 1, wherein the class of magnetoresistive sensors is a heterogeneous magnetoresistive sensor.
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