CN111999987A - Exposure method of electron beam positive photoresist - Google Patents
Exposure method of electron beam positive photoresist Download PDFInfo
- Publication number
- CN111999987A CN111999987A CN202010821044.6A CN202010821044A CN111999987A CN 111999987 A CN111999987 A CN 111999987A CN 202010821044 A CN202010821044 A CN 202010821044A CN 111999987 A CN111999987 A CN 111999987A
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- China
- Prior art keywords
- electron beam
- size
- exposure
- design size
- positive photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 41
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000002474 experimental method Methods 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 7
- 238000001259 photo etching Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention relates to the technical field of photoetching technology, in particular to an exposure method of electron beam positive photoresist, which comprises the following steps: providing a device layout; selecting the thickness of the electron beam positive photoresist according to the specific requirements of the etching process; reducing the design size of the device layout to be used as an experiment size; carrying out an electron beam exposure experiment according to the experiment size and the selected thickness of the electron beam positive photoresist, and adjusting exposure dose to make the photoresist fully photosensitive so as to expose the experiment size to the design size, thereby obtaining a corresponding relation between the exposure dose and each design size; and applying the corresponding exposure dose according to the design size of the wafer to be exposed according to the corresponding relation between the exposure dose and the design size.
Description
Technical Field
The invention relates to the technical field of photoetching processes, in particular to an exposure method of electron beam positive photoresist.
Background
The electron beam direct writing photoetching has the advantages of high resolution, no need of photoetching plate and the like. The electron beam direct writing process can be used for obtaining small-size patterns which are difficult to realize by optical lithography, and the electron beam exposure does not need a photomask, can directly introduce the device layout through pattern software, and can carry out exposure according to the device layout.
The electron beam positive resist is a photoresist that must be used in exposing the hole pattern and the trench pattern, and the exposed portion thereof is developed by a developing solution. Since the electron beam exposure efficiency is low, the larger the exposure area, the more time is required, and therefore, when it is necessary to form holes or grooves, it is necessary to use a positive resist as a pattern mask.
As the size of the electron beam pattern decreases, a thinner photoresist is required to make the pattern size small. However, since the electron beam positive photoresist needs to be used as an etching barrier layer, the photoresist thickness needs to reach a certain thickness for use. As shown in fig. 1, when the thickness of the resist is large, the exposure has a problem that the photoresist 200 cannot be completely exposed when the exposure dose is small, and as shown in fig. 2, the pattern size becomes large when the exposure dose is too large, and it may not be possible to find suitable conditions for making the same pattern as the design size.
Disclosure of Invention
In order to overcome the technical problems, the invention provides an exposure method of electron beam positive photoresist, which enables the photoresist to be fully photosensitive under the condition of reducing the design size.
In order to achieve the above object, the present invention provides an exposure method of electron beam positive resist, comprising the following steps:
providing a device layout;
selecting the thickness of the electron beam positive photoresist according to the specific requirements of the etching process;
reducing the design size of the device layout to be used as an experiment size;
carrying out an electron beam exposure experiment according to the experiment size and the selected thickness of the electron beam positive photoresist, and adjusting exposure dose to make the photoresist fully photosensitive so as to expose the experiment size to the design size, thereby obtaining a corresponding relation between the exposure dose and each design size;
and applying the corresponding exposure dose according to the design size of the wafer to be exposed according to the corresponding relation between the exposure dose and the design size.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a schematic diagram of a prior art structure in which a photoresist is not exposed to light;
FIG. 2 is a schematic diagram of a prior art structure after exposure dose is exceeded;
FIG. 3 is a schematic structural diagram of a photoresist after being fully exposed to light according to an embodiment of the present invention.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
The embodiment of the invention relates to an exposure method of electron beam positive photoresist, which comprises the following steps:
s1, providing a specific device layout. Generally, because the exposure efficiency of the electron beam is low, the specific area of the layout directly affects the exposure time, and the single exposure time of the electron beam cannot be too long, otherwise, the exposure accuracy is affected, so the layout area needs to be strictly controlled. The exposure time is generally not suitable to exceed 24 hours, and the specific calculation formula of the exposure time is as follows:
t＝(D*A)/I
if D＝200μC/cm2
A＝1cm2
I＝2nA
then t＝27 hours 46min
wherein t is exposure time, D is exposure dose of electron beam positive photoresist, A is area of the design layout, and I is electron beam current.
S2, selecting the thickness of the electron beam positive photoresist according to the specific requirements of the etching process, wherein the thickness of the electron beam positive photoresist can be different from 1000A to 6000A. Specifically, the electron beam positive resist is used as an etching barrier layer to etch the underlying film layer. Therefore, the electron beam positive photoresist with a proper thickness needs to be selected according to the thickness of the film layer to ensure that the electron beam positive photoresist is not completely consumed in the etching process. The thickness of the electron beam positive photoresist becomes thicker, which results in a higher dose of the electron beam positive photoresist.
And S3, selecting the thickness of the electron beam positive photoresist, and then carrying out an electron beam exposure experiment. Reducing the design size of the device layout to different sizes for carrying out exposure experiments; specifically, the design size of the device layout in this embodiment may be 30nm, the design size of the device layout is reduced to 20nm, 15nm, 10nm or even smaller in this embodiment, and the exposure experiment is performed with the reduced size of the device layout as the experiment size;
and S4, carrying out electron beam exposure experiments with different exposure doses according to different experiment sizes and the selected thickness of the electron beam positive photoresist, specifically, adjusting the exposure dose to … … times, 1.2 times, 1.5 times, 1.8 times and 2.1 times of the original exposure dose, and carrying out exposure dose experiments with different sizes. Obtaining the corresponding relation between exposure dose and each design size under the condition that the electron beam positive photoresist can be completely sensitized;
and S5, applying corresponding exposure dose according to the design size of the wafer to be exposed according to the corresponding relation between the exposure dose and each design size. In which a layer of photoresist 100 is deposited on a wafer, as shown in fig. 3, after exposure, the photoresist 100 can be completely exposed by using a larger exposure dose under the condition of reduced design size.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (4)
1. An exposure method of electron beam positive photoresist is characterized by comprising the following steps:
providing a device layout;
selecting the thickness of the electron beam positive photoresist according to the specific requirements of the etching process;
reducing the design size of the device layout to be used as an experiment size;
carrying out an electron beam exposure experiment according to the experiment size and the selected thickness of the electron beam positive photoresist, and adjusting exposure dose to make the photoresist fully photosensitive so as to expose the experiment size to the design size, thereby obtaining a corresponding relation between the exposure dose and each design size;
and applying the corresponding exposure dose according to the design size of the wafer to be exposed according to the corresponding relation between the exposure dose and each design size.
2. The method of claim 1, wherein the experimental size is 30% to 70% of the design size.
3. The method according to claim 1, wherein the design size is 10nm to 100 nm.
4. The method of claim 1, wherein the electron beam positive resist has a thickness of 1000A to 6000A.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010821044.6A CN111999987B (en) | 2020-08-14 | 2020-08-14 | Exposure method of electron beam positive photoresist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010821044.6A CN111999987B (en) | 2020-08-14 | 2020-08-14 | Exposure method of electron beam positive photoresist |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111999987A true CN111999987A (en) | 2020-11-27 |
| CN111999987B CN111999987B (en) | 2023-05-02 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010821044.6A Active CN111999987B (en) | 2020-08-14 | 2020-08-14 | Exposure method of electron beam positive photoresist |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111999987B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000031023A (en) * | 1998-07-14 | 2000-01-28 | Advantest Corp | Electron beam exposure method |
| US20020115020A1 (en) * | 2000-12-27 | 2002-08-22 | Yang Seung-Hune | Electron beam exposure method having good linearity with respect to producing fine patterns |
| JP2006196767A (en) * | 2005-01-14 | 2006-07-27 | Fujitsu Ltd | Electron beam exposure apparatus and method for determining scanning condition of electron beam |
| CN103676492A (en) * | 2012-09-21 | 2014-03-26 | 中国科学院微电子研究所 | Electron beam lithography method |
-
2020
- 2020-08-14 CN CN202010821044.6A patent/CN111999987B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000031023A (en) * | 1998-07-14 | 2000-01-28 | Advantest Corp | Electron beam exposure method |
| US20020115020A1 (en) * | 2000-12-27 | 2002-08-22 | Yang Seung-Hune | Electron beam exposure method having good linearity with respect to producing fine patterns |
| JP2006196767A (en) * | 2005-01-14 | 2006-07-27 | Fujitsu Ltd | Electron beam exposure apparatus and method for determining scanning condition of electron beam |
| CN103676492A (en) * | 2012-09-21 | 2014-03-26 | 中国科学院微电子研究所 | Electron beam lithography method |
Non-Patent Citations (1)
| Title |
|---|
| 殷华湘等: "电子束曝光UV3正性抗蚀剂的工艺研究", 《微电子学》 * |
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| Publication number | Publication date |
|---|---|
| CN111999987B (en) | 2023-05-02 |
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