CN111653626A - A kind of silicon carbide deep trench superjunction SBD device and preparation method - Google Patents
A kind of silicon carbide deep trench superjunction SBD device and preparation method Download PDFInfo
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Abstract
本发明公开了一种具有深沟槽和侧壁注入的碳化硅超结SBD器件元胞结构，所述元胞结构的N‑外延层中设置有若干个深沟槽，深沟槽的侧壁及底部注入或二次外延工艺构造一圈P Plus，然后在深沟槽的底部填入High‑K介质或SiO2，然后上部的其余部分中填入P型掺杂的多晶硅或金属，并与肖特基区的肖特基接触金属相连，填充的金属部分与侧壁也构成肖特基接触。本申请通过在碳化硅SBD器件元胞中结合深沟槽结构和与其相连P Plus结构，构造出一种新颖的超结器件，能避免传统超结结构的深注入或多次外延工艺的难度，进一步降低器件正向导通损耗，增强SBD器件的耐压能力，可靠性和抗干扰能力。
The invention discloses a cell structure of a silicon carbide superjunction SBD device with deep trenches and sidewall implantation. The N-epitaxial layer of the cell structure is provided with several deep trenches, and the sidewalls of the deep trenches are and bottom implantation or secondary epitaxy process to construct a circle of P Plus, then fill the bottom of the deep trench with High-K dielectric or SiO2, and then fill the rest of the upper part with P-doped polysilicon or metal, and fill it with Xiao The Schottky contact metal in the Teky region is connected, and the filled metal portion and the sidewall also form a Schottky contact. In the present application, a novel superjunction device is constructed by combining a deep trench structure and a P Plus structure connected thereto in a silicon carbide SBD device cell, which can avoid the difficulty of deep implantation or multiple epitaxy processes of traditional superjunction structures. Further reduce the forward conduction loss of the device, and enhance the withstand voltage capability, reliability and anti-interference capability of the SBD device.
Description
技术领域technical field
本发明属于H01L 27/00类半导体器件技术领域，具体涉及一种碳化硅深沟槽超结SBD器件。The invention belongs to the technical field of H01L 27/00 semiconductor devices, in particular to a silicon carbide deep trench super junction SBD device.
背景技术Background technique
SiC 作为近十几年来迅速发展的宽禁带半导体材料，与其它半导体材料，比如Si，GaN 及GaAs 相比，SiC 材料具有宽禁带、高热导率、高载流子饱和迁移率、高功率密度等优点。SiC 可以热氧化生成二氧化硅，使得SiC MOSFET及SBD等功率器件和电路的实现成为可能。自20 世纪90 年代以来，SiC MOSFET和SBD等功率器件已在开关稳压电源、高频加热、汽车电子以及功率放大器等方面取得了广泛的应用。Compared with other semiconductor materials, such as Si, GaN and GaAs, SiC material has wide band gap, high thermal conductivity, high carrier saturation mobility and high power. density, etc. SiC can be thermally oxidized to form silicon dioxide, making it possible to realize power devices and circuits such as SiC MOSFETs and SBDs. Since the 1990s, power devices such as SiC MOSFETs and SBDs have been widely used in switching power supplies, high-frequency heating, automotive electronics, and power amplifiers.
目前，碳化硅肖特基二极管（Schottky barrier diodes ，以下简称SBD）器件，尤其是高压SBD器件，其击穿电压和导通电阻的优化设计是互相影响和相互矛盾的，获得高击穿电压一般就很难获得低的导通电阻。业界针对传统的器件结构已经提出了一些在保持击穿电压不变来降低导通电阻的方法，包括：掩埋悬浮结构(Baried Floating P-Zone)和超结结构（Super Junction）。但掩埋悬浮结构和超结结构要么深注入和多次外延，商业化工艺实现很难。本发明的目的就是提出了一种新颖的深沟槽超结结构（Trench SuperJunction），可以避开深注入和多次外延工艺，同时提供高耐压和高可靠性。At present, silicon carbide Schottky barrier diodes (Schottky barrier diodes, hereinafter referred to as SBD) devices, especially high-voltage SBD devices, the optimal design of their breakdown voltage and on-resistance are mutually influenced and contradictory, and obtaining high breakdown voltage generally It is difficult to obtain low on-resistance. The industry has proposed some methods to reduce the on-resistance while keeping the breakdown voltage unchanged for traditional device structures, including: Buried Floating P-Zone and Super Junction. However, buried suspended structures and superjunction structures are either deep implanted and multiple epitaxy, and it is difficult to realize commercial processes. The purpose of the present invention is to propose a novel deep trench super junction structure (Trench SuperJunction), which can avoid deep implantation and multiple epitaxy processes, while providing high withstand voltage and high reliability.
发明内容SUMMARY OF THE INVENTION
针对现有技术中存在的问题，本发明的目的在于提供一种具有深沟槽的碳化硅超结SBD器件元胞结构，其通过在碳化硅SBD器件元胞中结合深沟槽结构和与其相连P Plus结构，构造出一种新颖的超结器件，能避免传统超结结构的深注入或多次外延工艺的难度，进一步增强SBD器件的耐压能力，可靠性和抗干扰能力。In view of the problems existing in the prior art, the purpose of the present invention is to provide a silicon carbide superjunction SBD device cell structure with deep trenches, which combines the deep trench structure in the silicon carbide SBD device cell and connects with it. The P Plus structure constructs a novel superjunction device, which can avoid the difficulty of deep implantation or multiple epitaxy processes of traditional superjunction structures, and further enhance the withstand voltage, reliability and anti-interference ability of SBD devices.
为实现上述目的，本发明采用以下技术方案：To achieve the above object, the present invention adopts the following technical solutions:
一种碳化硅深沟槽超结SBD器件，包括1个或多个元胞结构；所述元胞结构的N-外延层中设置有若干个深沟槽，所述深沟槽的深度为t1，所述N-外延层的厚度为T=t1+t2，其中，t1大于t2；深沟槽的侧壁及底部注入或二次外延工艺构造一圈P Plus，然后在深沟槽的底部填入一定深度t3的High-K介质或SiO2，其中t3小于t1；上部的其余部分中填入P型掺杂的多晶硅或金属，并与肖特基区的肖特基接触金属相连。A silicon carbide deep trench superjunction SBD device, comprising one or more cell structures; a plurality of deep trenches are arranged in the N-epitaxial layer of the cell structure, and the depth of the deep trenches is t1 , the thickness of the N- epitaxial layer is T=t1+t2, where t1 is greater than t2; the sidewall and bottom of the deep trench are implanted or a secondary epitaxy process constructs a circle of P Plus, and then the bottom of the deep trench is filled with High-K dielectric or SiO 2 into a certain depth t3, where t3 is less than t1; the rest of the upper part is filled with P-type doped polysilicon or metal, and is connected to the Schottky contact metal in the Schottky region.
进一步，所述深沟槽的深度t1大于所述N-外延层的厚度T的2/3。Further, the depth t1 of the deep trench is greater than 2/3 of the thickness T of the N- epitaxial layer.
进一步，所述深沟槽由ICP，RIE或激光烧孔的工艺制作而成。Further, the deep trenches are fabricated by the process of ICP, RIE or laser hole burning.
进一步，所述沟槽下部填充的High-K介质层的材料是SiO2、SiNx、Al2O3、AlN、HfO2、MgO、Sc2O3、Ga2O3、AlHFOx、HFSiON 等材料中的一种或任意几种；所述沟槽上部填充金属为Ti、Pt、W、Ni、Au、Co、Pb、Ag、Al 或其任意组合的合金,填充的金属与侧壁的接触为肖特基接触。Further, the material of the High-K dielectric layer filled in the lower part of the trench is SiO 2 , SiNx, Al 2 O 3 , AlN, HfO 2 , MgO, Sc 2 O 3 , Ga 2 O 3 , AlHFOx, HFSION and other materials One or any of several; the top filler metal of the trench is Ti, Pt, W, Ni, Au, Co, Pb, Ag, Al or an alloy of any combination thereof, and the contact between the filled metal and the sidewall is a Teky Contacts.
本申请通过在碳化硅SBD器件元胞中结合深沟槽结构和与其相连P Plus结构，构造出一种新颖的超结器件，能避免传统超结结构的深注入或多次外延工艺的难度，进一步降低器件正向导通损耗，增强SBD器件的耐压能力，可靠性和抗干扰能力。深沟槽的底部填入一定深度t3的High-K介质或SiO2（t3小于t1），然后上部的其余部分中填入P型掺杂的多晶硅或金属，并与肖特基区的肖特基接触金属相连；填充金属时金属与侧壁的接触为肖特基接触；填入底部的介质t3的厚度在耐压和正向导通阻抗间取折中，填入底部的介质t3越厚则器件反向耐压和漏电流越好，但正向导通阻抗会增大，根据实际器件的耐压，漏电流及导通阻抗要求可以通过反复的模拟验证得到最优化的t1， t2和t3的比例结构。In the present application, a novel superjunction device is constructed by combining a deep trench structure and a P Plus structure connected thereto in a silicon carbide SBD device cell, which can avoid the difficulty of deep implantation or multiple epitaxy processes of traditional superjunction structures. Further reduce the forward conduction loss of the device, and enhance the withstand voltage capability, reliability and anti-interference capability of the SBD device. The bottom of the deep trench is filled with High-K dielectric or SiO 2 with a certain depth of t3 (t3 is less than t1), and then the rest of the upper part is filled with P-type doped polysilicon or metal, and the Schottky region is connected with the Schottky region. The base contact metal is connected; when the metal is filled, the contact between the metal and the sidewall is Schottky contact; the thickness of the dielectric t3 filled at the bottom is a compromise between the withstand voltage and the forward conduction resistance, and the thicker the dielectric t3 filled at the bottom, the device The reverse withstand voltage and leakage current are better, but the forward conduction resistance will increase. According to the actual device withstand voltage, leakage current and conduction resistance requirements, the optimized ratio of t1, t2 and t3 can be obtained through repeated simulation verification. structure.
附图说明Description of drawings
图1为本申请具有深沟槽的碳化硅超结SBD器件元胞结构示意图；1 is a schematic diagram of the cell structure of a silicon carbide superjunction SBD device with deep trenches in the present application;
图2为本发明通过深沟槽刻蚀和侧壁注入构造超结的工艺示意图；2 is a schematic diagram of a process for constructing a super junction by deep trench etching and sidewall implantation according to the present invention;
图3为本发明超结结构与传统超结，掩埋悬浮结及沟槽SBD的关系图；Fig. 3 is the relation diagram of the super junction structure of the present invention and traditional super junction, buried suspension junction and trench SBD;
图4为传统JBS平面结构SBD器件TCAD模拟的反向电场分布图；Fig. 4 is the reverse electric field distribution diagram of the traditional JBS planar structure SBD device TCAD simulation;
图5为沟槽全部填充SiO2介质的Trench SJ-SBD器件反向电场分布图；Fig. 5 is the reverse electric field distribution diagram of Trench SJ-SBD device with all trenches filled with SiO2 medium;
图6为本发明的沟槽下部填充SiO2介质上部填充肖特基金属的Trench SJ-SBD器件反向电场分布图；FIG. 6 is a reverse electric field distribution diagram of the Trench SJ-SBD device filled with Schottky metal at the lower part of the trench and filled with SiO 2 dielectric at the upper part of the present invention;
图7为传统JBS结构与本发明的Trench SJ-SBD结构上部分别填充1um，2um和3um肖特基金属时正向导通阻抗特性的比较图。FIG. 7 is a comparison diagram of forward conduction impedance characteristics when the top of the conventional JBS structure and the Trench SJ-SBD structure of the present invention are filled with 1um, 2um and 3um Schottky metal respectively.
具体实施方式Detailed ways
下面，参考附图，对本发明进行更全面的说明，附图中示出了本发明的示例性实施例。然而，本发明可以体现为多种不同形式，并不应理解为局限于这里叙述的示例性实施例。而是，提供这些实施例，从而使本发明全面和完整，并将本发明的范围完全地传达给本领域的普通技术人员。The present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. The present invention may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
如图1所示，本发明提供了一种具有深沟槽和侧壁注入的碳化硅超结SBD器件元胞结构，所述元胞结构的N-外延层中设置有若干个深沟槽，所述深沟槽的深度为t1，所述N-外延层的厚度为T=t1+t2，其中，t1大于t2；最优化的，t1为t2的两倍以上，在器件正向导通阻抗和耐压之间取折中；本文中的折中是指本领域技术人员可以根据产品的具体要求进行参数调整。深沟槽的侧壁及底部注入一圈P Plus，然后在深沟槽的底部填入一定深度t3的High-K介质或SiO2（t3小于t1），然后上部的其余部分中填入P型掺杂的多晶硅或金属，并与肖特基区的肖特基接触金属相连；填入底部的介质t3的厚度在耐压和正向导通阻抗间取折中，填入底部的介质t3越厚耐压和漏电流越好，但正向导通阻抗会增大。本申请通过在碳化硅SBD器件元胞中结合深沟槽结构和与其相连P Plus结构，构造出一种新颖的超结器件，能避免传统超结结构的深注入或多次外延工艺的难度，进一步降低器件正向导通损耗，增强SBD器件的耐压能力，可靠性和抗干扰能力。As shown in FIG. 1 , the present invention provides a cell structure of a silicon carbide superjunction SBD device with deep trenches and sidewall implantation, wherein the N-epitaxial layer of the cell structure is provided with several deep trenches, The depth of the deep trench is t1, and the thickness of the N- epitaxial layer is T=t1+t2, where t1 is greater than t2; optimally, t1 is more than twice that of t2, and the forward conduction resistance and There is a compromise between the withstand voltage; the compromise in this text means that those skilled in the art can adjust the parameters according to the specific requirements of the product. A circle of P Plus is injected into the sidewall and bottom of the deep trench, and then the bottom of the deep trench is filled with High-K dielectric or SiO 2 with a certain depth of t3 (t3 is less than t1), and then the rest of the upper part is filled with P-type Doped polysilicon or metal, and connected to the Schottky contact metal in the Schottky region; the thickness of the dielectric t3 filled in the bottom is a compromise between withstand voltage and forward conduction resistance, and the dielectric t3 filled in the bottom is thicker and resistant to resistance. The better the voltage and leakage current, but the forward impedance will increase. In the present application, a novel superjunction device is constructed by combining a deep trench structure and a P Plus structure connected thereto in a silicon carbide SBD device cell, which can avoid the difficulty of deep implantation or multiple epitaxy processes of traditional superjunction structures. Further reduce the forward conduction loss of the device, and enhance the withstand voltage capability, reliability and anti-interference capability of the SBD device.
深沟槽由ICP，RIE或激光烧孔的工艺制作而成。如图2所示，该工艺是一种通过深沟槽刻蚀和注入构造超结结构的工艺方法示意图。Deep trenches are made by ICP, RIE or laser hole burning. As shown in FIG. 2 , the process is a schematic diagram of a process method for constructing a superjunction structure through deep trench etching and implantation.
沟槽中下部填充High-K介质层，其材料可以是SiO2、SiNx、Al2O3、AlN、HfO2、MgO、Sc2O3、Ga2O3、AlHFOx、HFSiON 等材料中的一种或任意几种；而沟槽上部填充金属为Ti、Pt、W、Ni、Au、Co、Pb、Ag、Al 或其任意组合的合金，填充的金属与侧壁的接触为肖特基接触；并与肖特基区的肖特基接触金属相连。The middle and lower part of the trench is filled with a High-K dielectric layer, and its material can be one of SiO 2 , SiNx, Al 2 O 3 , AlN, HfO 2 , MgO, Sc 2 O 3 , Ga 2 O 3 , AlHFOx, HFSION, etc. one or any of several types; and the filler metal in the upper part of the trench is Ti, Pt, W, Ni, Au, Co, Pb, Ag, Al or an alloy of any combination thereof, and the contact between the filled metal and the sidewall is Schottky contact ; and is connected to the Schottky contact metal of the Schottky region.
如图3的示意图所示，本发明的新颖深沟槽超结SBD结构结合了超结二极管，掩埋悬浮结构和沟槽式SBD三者的优点，同时避免了多次外延的复杂工艺，降低了单位面积导通阻抗，具有极好的器件特性和实际制作经济价值。As shown in the schematic diagram of FIG. 3 , the novel deep trench superjunction SBD structure of the present invention combines the advantages of superjunction diodes, buried suspension structures and trench SBDs, while avoiding the complex process of multiple epitaxy, reducing the cost of The on-resistance per unit area has excellent device characteristics and practical production economic value.
图4是传统平面JBS结构SBD的TCAD模拟反向电场分布图。FIG. 4 is a TCAD simulated reverse electric field distribution diagram of a traditional planar JBS structure SBD.
而图5是Trench SJ-SBD沟槽中全部填充SiO2介质的反向电场分布图。And Fig. 5 is the reverse electric field distribution diagram of Trench SJ-SBD trenches filled with SiO2 medium.
图6为本发明的沟槽下部填充SiO2介质上部填充肖特基金属的Trench SJ-SBD器件反向电场分布图，通过TCAD模拟可以看出，Trench SJ-SBD对肖特基接触区有很好的电场屏蔽作用，能有效提升器件反向耐压的可靠性。Fig. 6 is the reverse electric field distribution diagram of the Trench SJ-SBD device filled with Schottky metal on the lower part of the trench and filled with SiO 2 dielectric on the upper part of the present invention. It can be seen from the TCAD simulation that the Trench SJ-SBD has a great effect on the Schottky contact area. A good electric field shielding effect can effectively improve the reliability of the reverse withstand voltage of the device.
图7为传统JBS结构与本发明的Trench SJ-SBD结构上部分别填充1um，2um和3um肖特基金属时正向导通阻抗特性的比较图，可以看出Trench SJ-SBD新结构的正向导通阻抗远远优于传统的JBS平面SBD结构；同时，沟槽中上部填充的肖特基金属部分比例越高，正向导通阻抗越低。Figure 7 is a comparison diagram of the forward conduction impedance characteristics when the upper part of the traditional JBS structure and the Trench SJ-SBD structure of the present invention are filled with 1um, 2um and 3um Schottky metal respectively. It can be seen that the forward conduction of the new Trench SJ-SBD structure The impedance is much better than the traditional JBS planar SBD structure; at the same time, the higher the proportion of the Schottky metal part filled in the upper part of the trench, the lower the forward conduction resistance.
上述示例只是用于说明本发明，除此之外，还有多种不同的实施方式，而这些实施方式都是本领域技术人员在领悟本发明思想后能够想到的，故，在此不再一一列举。The above examples are only used to illustrate the present invention. In addition, there are many different implementations, and these implementations can be thought of by those skilled in the art after comprehending the idea of the present invention. Therefore, they are not repeated here. an enumeration.
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