CN111627841A - Novel edge etching reaction device and edge etching method - Google Patents
Novel edge etching reaction device and edge etching method Download PDFInfo
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- CN111627841A CN111627841A CN202010617799.4A CN202010617799A CN111627841A CN 111627841 A CN111627841 A CN 111627841A CN 202010617799 A CN202010617799 A CN 202010617799A CN 111627841 A CN111627841 A CN 111627841A
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Abstract
A novel edge etching reaction device and an edge etching method are provided, the device comprises: the upper electrode and the lower electrode are positioned in the main body cavity, the upper electrode and the lower electrode are oppositely arranged, the radio frequency applied by the upper electrode and the radio frequency applied by the lower electrode are the same, the potential amplitude difference between the upper electrode and the lower electrode is less than or equal to a first threshold value, and the potential phase difference between the upper electrode and the lower electrode is less than or equal to a second threshold value; a side electrode connection member having a first position state in which the side electrode connection member surrounds the side portions of the upper electrode and the lower electrode and a second position state in which the side electrode connection member surrounds the side portion of the upper electrode or the side portion of the lower electrode; the voltage difference between the upper and lower electrodes and the side electrode connection is used for plasma discharge. The novel edge etching reaction device can improve the etching precision and efficiency of the edge etching area.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a novel edge etching reaction device and an edge etching method.
Background
In semiconductor manufacturing, a plurality of processes are involved, each of which is performed by a certain apparatus and process. Among them, the etching process is an important process in semiconductor manufacturing, such as a plasma etching process. The plasma etching process is to utilize reaction gas to generate plasma after obtaining energy, wherein the plasma comprises charged particles such as ions and electrons, neutral atoms, molecules and free radicals with high chemical activity, and an etching object is etched through physical and chemical reactions.
However, during plasma etching, the etching conditions at the edge of the wafer and the etching conditions at the center of the wafer are greatly different, and the etching conditions include: plasma density distribution, radio frequency electric field, temperature distribution, etc., thereby causing byproduct polymer to be deposited on the upper and lower surfaces and the side wall of the edge of the wafer during etching of the central region of the wafer. The deposition of the byproduct polymer can generate an accumulation effect along with the progress of the etching process, and when the thickness of the byproduct polymer reaches a certain degree, the adhesive force between the byproduct polymer and the wafer is deteriorated to cause the byproduct polymer to fall off, thereby causing a series of problems that the graph stability of the wafer is influenced, an etching chamber is polluted and the like.
In view of this, an edge etching process is introduced in the industry, and specifically, a wafer is placed in an edge etching apparatus, and the generated plasma etches the edge of the wafer while the etching of the center of the wafer is avoided as much as possible.
However, in the process of the edge etching process using the existing edge etching device, the etching precision of the edge area of the wafer is poor, and the etching efficiency of the edge etching device is low.
Disclosure of Invention
The invention aims to provide a novel edge etching reaction device and an edge etching method, which can improve the etching precision of the edge area of a wafer and the efficiency of etching the edge area of the wafer, particularly the lower surface area of the edge of the wafer.
In order to solve the above technical problems, the present invention provides a novel edge etching reaction apparatus, comprising: a body cavity; the upper electrode and the lower electrode are positioned in the main body cavity, the upper electrode and the lower electrode are oppositely arranged, the radio frequency applied by the upper electrode is the same as that applied by the lower electrode, the potential amplitude difference between the upper electrode and the lower electrode is less than or equal to a first threshold value, and the potential phase difference between the upper electrode and the lower electrode is less than or equal to a second threshold value; a side electrode connection having a first position state in which the side electrode connection surrounds the sides of the upper and lower electrodes and a second position state in which the side electrode connection surrounds the sides of the upper or lower electrode; the voltage difference between the upper electrode and the lower electrode and the side electrode connecting piece is used for plasma discharge.
Optionally, the method further includes: and the adjusting piece is connected with the side electrode connecting piece and is suitable for adjusting the position of the side electrode connecting piece and enabling the side electrode connecting piece to be switched between a first position state and a second position state.
Optionally, the side electrode connector is grounded.
Optionally, the method further includes: the side electrode connecting piece is connected with one end of the capacitor, the other end of the capacitor is grounded, and the capacitance value of the capacitor is larger than or equal to the capacitance threshold value.
Optionally, the capacitance threshold is 100 pF.
Optionally, the method further includes: the lower dielectric isolation layer is positioned in the main body cavity and positioned on the upper surface of the part of the lower electrode, the side edge of the lower dielectric isolation layer is recessed relative to the side edge of the lower electrode, and the upper dielectric isolation layer is positioned in the main body cavity and positioned on the lower surface of the part of the upper electrode, and the side edge of the upper dielectric isolation layer is recessed relative to the side edge of the upper electrode.
Optionally, the material of the lower dielectric isolation layer and the upper dielectric isolation layer includes ceramic or quartz or a low dielectric constant material.
Optionally, the device further comprises an upper radio frequency isolation ring covering the side wall of the upper electrode; and the lower radio frequency isolation ring covers the side wall of the lower electrode.
Optionally, a plurality of mutually spaced air exhaust channels are arranged in the side electrode connecting piece; the area surrounded by the upper radio frequency isolation ring, the lower radio frequency isolation ring and the side electrode connecting piece is a plasma area; the pumping channel is dimensioned such that the minimum distance that charged particles of the plasma region move when leaving the pumping channel is greater than the mean free path of the charged particles.
Optionally, the upper electrode and the lower electrode, and the upper rf isolation ring and the lower rf isolation ring are configured to accommodate a wafer; the distance between the upper surface of the wafer and the lower surface of the upper electrode is suitable for keeping 0.1mm to 10 mm when the edge of the wafer is etched.
Optionally, the surface of the upper rf isolation ring facing the lower rf isolation ring presents an inclined surface, and the surface of the lower rf isolation ring facing the upper rf isolation ring presents an inclined surface; and the distance between the upper radio frequency isolation ring and the lower radio frequency isolation ring is reduced from the lower radio frequency isolation ring to the horizontal direction of the lower electrode.
Optionally, the side electrode connecting piece is of a U-shaped structure, and a groove is formed in the side electrode connecting piece, and faces to an area between the upper radio frequency isolation ring and the lower radio frequency isolation ring.
Optionally, the side electrode connecting piece is in contact with the side of the upper radio frequency isolation ring and the side of the lower radio frequency isolation ring in the first position state; the side electrode connecting piece is in contact with the side part of the upper radio frequency isolation ring or the side part of the lower radio frequency isolation ring in the second position state.
Optionally, the side electrode connecting piece is separated from the side of the upper radio frequency isolation ring and the side of the lower radio frequency isolation ring in the first position state; the side electrode connecting piece is separated from the side part of the upper radio frequency isolation ring or the side part of the lower radio frequency isolation ring in the second position state.
Optionally, the upper rf isolation ring and the lower rf isolation ring are made of a low dielectric constant material, and the low dielectric constant material includes a reaction gas vacuum medium, ceramic, or quartz.
Optionally, the gas-liquid separator further comprises a first gas inlet channel, wherein the first gas inlet channel passes through the upper radio frequency isolation ring, and an outlet of the first gas inlet channel is located at the bottom of the upper radio frequency isolation ring.
Optionally, the method further includes: and the second gas inlet channel longitudinally penetrates through the upper electrode and the upper medium isolation layer, and is suitable for introducing inert gas.
Optionally, the surface of the side electrode connecting piece, the surface of the upper electrode on the side of the upper dielectric isolation layer, and the surface of the lower electrode on the side of the lower dielectric isolation layer, which are used for facing the wafer, have a protective layer.
Optionally, the material of the protective layer is alumina or Y2O3。
Optionally, the size of the upper rf isolation ring between the side electrode connector and the upper electrode is 0.1mm to 100 mm.
Optionally, the materials of the side electrode connecting member, the upper electrode, and the lower electrode include aluminum alloy, silicon, or silicon carbide.
Optionally, the method further includes: and the position adjusting component is connected with the upper electrode and is suitable for adjusting the distance between the upper electrode and the lower electrode.
Optionally, the first threshold is 1000 volts and the second threshold is 30 °.
The invention also provides an edge etching method, which adopts any one of the novel edge etching reaction devices, and comprises the following steps: transferring the wafer between the lower electrode and the upper electrode; adjusting the distance between the upper electrode and the lower electrode to enable the distance between the upper surface of the wafer and the lower surface of the upper electrode to be within a threshold range; after the distance between the upper electrode and the lower electrode is adjusted, adjusting the position of the side electrode connecting piece and switching the side electrode connecting piece from the second position state to the first position state; and after the side electrode connecting piece is in the first position state, introducing etching gas, wherein the etching gas is excited by the voltage difference between the upper electrode and the side electrode connecting piece and the voltage difference between the lower electrode and the side electrode connecting piece to generate plasma so as to etch the edge of the wafer.
Optionally, the novel edge etching reaction device further includes: a second air inlet passage longitudinally extending through the upper electrode; the edge etching method further comprises the following steps: and in the process of introducing the etching gas, introducing inert gas by adopting a second gas channel.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
according to the novel edge etching reaction device provided by the technical scheme of the invention, the wafer is accommodated between the lower electrode and the upper electrode. Because the radio frequency applied by the upper electrode and the lower electrode is the same, the potential amplitude difference between the upper electrode and the lower electrode is less than or equal to a first threshold value, and the potential phase difference between the upper electrode and the lower electrode is less than or equal to a second threshold value, the voltage difference between the upper electrode and the lower electrode is small, and therefore plasma cannot be formed in the region between the upper electrode and the lower electrode, which faces the wafer, and the requirement on controlling the distance between the wafer and the upper electrode is lowered. The side electrode connecting member has a first position state in which the side electrode connecting member surrounds the side portions of the upper and lower electrodes and a second position state in which the side electrode connecting member surrounds the side portion of the upper electrode or the side portion of the lower electrode. The voltage difference between the upper electrode and the lower electrode and the side electrode connecting piece is used for plasma discharge. The plasma is confined to the area enclosed between the side electrode connection member, the outer side of the upper electrode and the outer side of the lower electrode, enabling precise control of the edge of the wafer. In conclusion, the etching precision of the wafer edge area and the etching efficiency of the wafer edge area, particularly the lower surface area of the wafer edge are improved.
In the edge etching method provided by the technical scheme of the invention, the wafer is transmitted between the lower electrode and the upper electrode; and then adjusting the distance between the upper electrode and the lower electrode to enable the distance between the upper surface of the wafer and the lower surface of the upper electrode to be within a threshold range, wherein the radio frequency applied by the upper electrode and the radio frequency applied by the lower electrode are the same, the potential amplitude difference between the upper electrode and the lower electrode is smaller than or equal to a first threshold, and the potential phase difference between the upper electrode and the lower electrode is smaller than or equal to a second threshold, so that the voltage difference between the upper electrode and the lower electrode is smaller, and plasma cannot be formed in a region between the upper electrode and the lower electrode, which faces the wafer, and the control requirement on the distance between the wafer and the upper electrode is reduced. Adjusting the position of the side electrode connector and switching the side electrode connector from the second position state to the first position state. And after the side electrode connecting piece is in the first position state, introducing etching gas, wherein the etching gas is excited by the voltage difference between the upper electrode and the side electrode connecting piece and the voltage difference between the lower electrode and the side electrode connecting piece respectively to generate plasma so as to etch the edge of the wafer, and the plasma is limited in an area defined by the side electrode connecting piece, the outer side of the upper electrode and the outer side of the lower electrode, so that the edge of the wafer can be accurately controlled. In conclusion, the etching precision of the wafer edge area and the etching efficiency of the wafer edge area, particularly the lower surface area of the wafer edge are improved.
Drawings
FIG. 1 is a schematic cross-sectional view of a novel edge etching reaction apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a novel edge etching reaction apparatus according to another embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of a novel edge etching reaction apparatus according to another embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a novel edge etching reaction apparatus according to another embodiment of the present invention;
FIG. 5 is a flow chart of an edge etching reaction in yet another embodiment of the invention.
Detailed Description
An embodiment of the present invention provides a novel edge etching reaction apparatus, which is combined with fig. 1, and includes:
a body cavity;
the upper electrode 100 and the lower electrode 110 are positioned in the main body cavity, the upper electrode 100 and the lower electrode 110 are oppositely arranged, the radio frequency applied by the upper electrode 100 and the radio frequency applied by the lower electrode 110 are the same, the potential amplitude difference between the upper electrode 100 and the lower electrode 110 is less than or equal to a first threshold value, and the potential phase difference between the upper electrode 100 and the lower electrode 110 is less than or equal to a second threshold value;
a side electrode connection member 160, the side electrode connection member 160 having a first position state and a second position state, the side electrode connection member 160 surrounding the sides of the upper electrode 100 and the lower electrode 110 in the first position state, the side electrode connection member 160 surrounding the sides of the upper electrode 100 or the sides of the lower electrode 110 in the second position state;
the voltage difference between the upper and lower electrodes 100 and 110 and the side electrode connection 160 is used for plasma discharge.
In this embodiment, the method further includes: an adjustment member 170 coupled to the side electrode connection member 160, the adjustment member 170 adapted to adjust the position of the side electrode connection member 160 and to enable the side electrode connection member 160 to switch between a first position state and a second position state.
In this embodiment, the side electrode connecting member 160 is grounded.
In another embodiment, the novel edge etching reaction device further comprises: the side electrode connecting piece is connected with one end of the capacitor, the other end of the capacitor is grounded, and the capacitance value of the capacitor is larger than or equal to the capacitance threshold value. The capacitance threshold is 100 pF.
In this embodiment, the novel edge etching reaction device further includes: a lower dielectric isolation layer 120 located within the body cavity and on a portion of the upper surface of the lower electrode 110, a side edge of the lower dielectric isolation layer 120 being recessed relative to a side edge of the lower electrode 110; an upper dielectric isolation layer 130 located within the body cavity and at a portion of the lower surface of the upper electrode 100, a side edge of the upper dielectric isolation layer 130 being recessed relative to a side edge of the upper electrode 100; an upper RF isolation ring 140 covering the sidewall of the upper electrode 100; a lower RF isolation ring 150 covering the sidewall of the lower electrode 110.
The material of the lower dielectric isolation layer 120 and the upper dielectric isolation layer 130 comprises ceramic or quartz or a low dielectric constant material.
The wafer 190 is received between the lower electrode 110 and the upper electrode 100, and between the upper rf isolation ring 140 and the lower rf isolation ring 150. Specifically, in this embodiment, the wafer 190 is accommodated between the lower dielectric isolation layer 120 and the upper dielectric isolation layer 130, and between the upper rf isolation ring 140 and the lower rf isolation ring 150.
The side electrode connecting member 160 is provided with a plurality of pumping channels spaced from each other, and the pumping channels are used for pumping byproducts generated after etching the edge of the wafer. The air exhaust channel is a long and narrow channel.
The area enclosed by the upper rf isolation ring 140, the lower rf isolation ring 150 and the side electrode connection member 160 is a plasma area.
In this embodiment, the pumping channel is dimensioned such that the minimum distance that charged particles of the plasma region move when leaving the pumping channel is larger than the mean free path of the charged particles. This has the advantages that: even if charged particles pass through the pumping channel, the charged particles in the plasma region can be prevented from overflowing from the plasma region.
In this embodiment, the potentials of the upper voltage and the lower voltage may be selectively set according to the requirement.
In one embodiment, the potentials between the upper and lower electrodes are equal in magnitude and equal in phase.
In another embodiment, the potentials between the upper and lower electrodes are equal in magnitude, and the potential phases between the upper and lower electrodes have a difference.
In another embodiment, the magnitude of the potential between the upper and lower electrodes is different and the phase of the potential between the upper and lower electrodes is equal.
In another embodiment, the magnitude of the potential between the upper electrode and the lower electrode is different, and the phase of the potential between the upper electrode and the lower electrode is different.
In one embodiment, the first threshold is 1000 volts and the second threshold is 30 °.
The distance between the upper surface of the wafer and the lower surface of the upper electrode is suitable for keeping 0.1mm to 10 mm when the edge of the wafer is etched.
In this embodiment, the side electrode connecting member 160 contacts the side of the upper rf isolation ring 140 and the side of the lower rf isolation ring 150 in the first position; the side electrode connection 160 is in contact with the side of the upper rf isolation ring 140 or the side of the lower rf isolation ring 150 in the second position state.
In another embodiment, the side electrode connection is discrete from the sides of the upper and lower rf isolation rings in the first position state; the side electrode connecting piece is separated from the side part of the upper radio frequency isolation ring or the side part of the lower radio frequency isolation ring in the second position state.
In this embodiment, the upper rf isolation ring and the lower rf isolation ring are made of a low dielectric constant material, and the low dielectric constant material includes a reaction gas vacuum medium, ceramic, or quartz.
The materials of the side electrode connection member 160, the upper electrode, and the lower electrode include aluminum alloy, silicon, or silicon carbide.
In this embodiment, the novel edge etching reaction device further includes: a first air inlet passage 180, wherein the first air inlet passage 180 passes through the upper radio frequency isolation ring 140 and the outlet of the first air inlet passage 180 is positioned at the bottom of the upper radio frequency isolation ring 140.
In this embodiment, the first air inlet channel 180 includes a first portion 181, a second portion 182, a third portion 183, and a fourth portion 184, the first portion 181 extending longitudinally from the top surface of the upper electrode to a portion of the thickness of the upper electrode, the second portion 182 connecting to the first portion 181, the second portion 182 extending laterally from one end of the first portion 181 to the interior of the upper dielectric spacer layer 130; a third portion 183 is connected to the second portion 182 and extends longitudinally to the bottom surface of the upper dielectric isolation layer 130, and the fourth portion 184 extends longitudinally from the edge bottom surface of the upper electrode 100 to the second portion 182.
The first gas inlet channel is suitable for introducing etching gas for etching the edge of the wafer.
The novel edge etching reaction device further comprises: and the second gas inlet channel 200, the second gas inlet channel 200 longitudinally penetrates through the upper electrode 100 and the upper medium isolation layer 130, and the second gas channel 200 is suitable for introducing inert gas.
In other embodiments, the upper dielectric isolation layer may not be provided if the distance from the lower surface of the upper electrode 100 to the upper surface of the wafer is controlled to be suitable. For example, when the distance from the lower surface of the upper electrode 100 to the upper surface of the wafer is 1mm to 20mm, the upper dielectric isolation layer may not be provided (refer to fig. 2). In this case, the second intake passage 200 longitudinally penetrates the upper electrode 100.
Since the rf frequencies applied to the upper electrode 100 and the lower electrode 110 are the same, the potential amplitude difference between the upper voltage 100 and the lower electrode 110 is equal to or less than a first threshold, and the potential phase difference between the upper voltage 100 and the lower electrode 110 is equal to or less than a second threshold, so that the voltage difference between the upper voltage 100 and the lower electrode 110 is small, and therefore, a region between the upper voltage 100 and the lower electrode 110 facing the wafer cannot form plasma, and thus, the requirement for controlling the distance between the wafer and the upper electrode 100 is reduced.
The surface of the side electrode connecting member 160, the surface of the upper electrode 100 at the side of the upper dielectric isolation layer 130, and the surface of the lower electrode 100 at the side of the lower dielectric isolation layer 120 have a protective layer at the portion facing the wafer.
The protective layer is made of aluminum oxide or Y2O3。
The protective layer can protect the upper electrode and the lower electrode and prolong the service life of the upper electrode and the lower electrode.
The size of the upper rf isolation ring 140 between the side electrode connection 160 and the upper electrode 100 is 0.1mm-100 mm.
In one embodiment, as shown in fig. 1, the upper rf isolation ring 140 presents a horizontal surface facing the surface of the wafer 190, and the lower rf isolation ring 150 presents a horizontal surface facing the surface of the wafer 190.
In another embodiment, as shown in fig. 3, the upper rf isolation ring 140a is beveled toward the surface of the wafer 190, and the lower rf isolation ring 150a is beveled toward the surface of the wafer 190; in the horizontal direction from the lower rf isolation ring 150a to the lower electrode 110, the distance between the upper rf isolation ring 140a and the lower rf isolation ring 150a is decreased, so that the distribution shape of the plasma substantially assumes the shape of a bell mouth. Has the advantages that: the horn-shaped electrode aims to increase the area ratio between the side electrode connecting piece and the lower electrode and between the side electrode connecting piece and the upper electrode, enhance the bombardment capability of plasma charged particles towards the lower electrode and the upper electrode and accelerate the etching of the edge of a wafer.
In another embodiment, referring to fig. 4, the side electrode connector 160c has a U-shaped configuration, and the side electrode connector 160c has a groove therein, the groove facing the region between the upper rf isolation ring 140c and the lower rf isolation ring 150 c. Because the side electrode connecting piece 160c is of a U-shaped structure, the contact area between the plasma and the side electrode connecting piece 160c can be increased, the plasma discharge can be better excited, the bombardment effect on the edge of the wafer can be enhanced, the plasma can be better limited in the area enclosed by the side electrode connecting piece 160c, the upper radio frequency isolation ring 140c and the lower radio frequency isolation ring 150c, and the accuracy of the etching of the edge of the wafer can be further improved.
It should be noted that the side electrode connecting member 160c is U-shaped and the surface of the upper rf isolation ring 140a facing the wafer 190 is inclined, either or both of them may be satisfied.
The novel edge etching reaction device further comprises: and the position adjusting component is connected with the upper electrode and is suitable for adjusting the distance between the upper electrode and the lower electrode.
In one embodiment, the first threshold is 1000 volts and the second threshold is 30 °.
It should be noted that, the drawings of the novel edge etching reaction apparatus in this embodiment only show a part, and actually, the lower dielectric isolation ring, the upper dielectric isolation layer, the upper rf isolation ring, the lower rf isolation ring and the wafer are respectively symmetrical patterns, and only the left half is taken as an example in the drawings.
Another embodiment of the present invention further provides an edge etching method, which includes the following steps with reference to fig. 5, using the novel edge etching reaction apparatus described above:
s01: transmitting the wafer between the lower electrode and the upper electrode;
s02: adjusting the distance between the upper electrode and the lower electrode to enable the distance between the upper surface of the wafer and the lower surface of the upper electrode to be within a threshold range;
s03: after the distance between the upper electrode and the lower electrode is adjusted, adjusting the position of the side electrode connecting piece and switching the side electrode connecting piece from the second position state to the first position state;
s04: and after the side electrode connecting piece is in the first position state, introducing etching gas, wherein the etching gas is excited by the voltage difference between the upper electrode and the side electrode connecting piece and the voltage difference between the lower electrode and the side electrode connecting piece to generate plasma so as to etch the edge of the wafer.
Specifically, the wafer is transferred into the edge body cavity through the wafer transfer gate 300, and the wafer is placed on the lower dielectric isolation layer 120, and the wafer is located between the lower electrode and the upper electrode, and between the upper radio frequency isolation ring and the lower radio frequency isolation ring; the lower dielectric isolation layer 120 and the upper electrode 100, and the upper rf isolation ring 140 and the lower rf isolation ring 150 are used for accommodating the wafer 190, the wafer 190 is in an outwardly extending suspended state, when the wafer 190 is positioned, the upper electrode 100 can be moved to a proper position on the surface of the wafer 190 by electrostatic clamping, and then the adjusting member 170 is used to adjust the position of the side electrode connecting member 160, so that the side electrode connecting member 160 can cover the outer sidewalls of the upper rf isolation ring 140 and the lower rf isolation ring 150. After the side electrode connecting member 160 covers the outer sidewalls of the upper rf isolation ring 140 and the lower rf isolation ring 150, the first gas inlet channel 180 is filled with etching gas and excited by the voltage difference between the side electrode connecting member 160 and the upper electrode 100 and the lower electrode 110 to generate plasma, and the plasma is confined in the region defined by the side electrode connecting member 160, the upper rf isolation ring 140 and the lower rf isolation ring 150, so that the edge of the wafer 190 can be precisely controlled.
The edge etching method further comprises the following steps: and in the process of introducing the etching gas into the first gas inlet channel, the second gas channel is suitable for introducing the inert gas. The method has the following effects: on one hand, the introduced inert gas enters the plasma generating area, which is beneficial to promoting the plasma discharge; secondly, the inert gas can prevent the plasma from diffusing to the center of the wafer; and thirdly, the static chuck, the lower medium isolation layer and the like can be cleaned by purging with inert gas in the non-etching stage of the machine.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (25)
1. A novel edge etching reaction device is characterized by comprising:
a body cavity;
the upper electrode and the lower electrode are positioned in the main body cavity, the upper electrode and the lower electrode are oppositely arranged, the radio frequency applied by the upper electrode is the same as that applied by the lower electrode, the potential amplitude difference between the upper electrode and the lower electrode is less than or equal to a first threshold value, and the potential phase difference between the upper electrode and the lower electrode is less than or equal to a second threshold value;
a side electrode connection having a first position state in which the side electrode connection surrounds the sides of the upper and lower electrodes and a second position state in which the side electrode connection surrounds the sides of the upper or lower electrode;
the voltage difference between the upper electrode and the lower electrode and the side electrode connecting piece is used for plasma discharge.
2. The novel edge etching reaction device of claim 1, further comprising: and the adjusting piece is connected with the side electrode connecting piece and is suitable for adjusting the position of the side electrode connecting piece and enabling the side electrode connecting piece to be switched between a first position state and a second position state.
3. The novel edge etching reaction device of claim 1, wherein the side electrode connector is grounded.
4. The novel edge etching reaction device of claim 1, further comprising: the side electrode connecting piece is connected with one end of the capacitor, the other end of the capacitor is grounded, and the capacitance value of the capacitor is larger than or equal to the capacitance threshold value.
5. The novel edge etch reactor of claim 4, wherein the capacitance threshold is 100 pF.
6. The novel edge etching reaction device of claim 1, further comprising: the lower dielectric isolation layer is positioned in the main body cavity and positioned on the upper surface of the part of the lower electrode, the side edge of the lower dielectric isolation layer is recessed relative to the side edge of the lower electrode, and the upper dielectric isolation layer is positioned in the main body cavity and positioned on the lower surface of the part of the upper electrode, and the side edge of the upper dielectric isolation layer is recessed relative to the side edge of the upper electrode.
7. The novel edge etch reactor of claim 6, wherein the material of the lower dielectric isolation layer and the upper dielectric isolation layer comprises ceramic or quartz or a low dielectric constant material.
8. The novel edge etching reaction device as claimed in claim 1, further comprising an upper RF isolation ring covering the sidewall of the upper electrode; and the lower radio frequency isolation ring covers the side wall of the lower electrode.
9. The novel edge etching reaction device as claimed in claim 8, wherein a plurality of mutually spaced pumping channels are provided in the side electrode connecting member; the area surrounded by the upper radio frequency isolation ring, the lower radio frequency isolation ring and the side electrode connecting piece is a plasma area; the pumping channel is dimensioned such that the minimum distance that charged particles of the plasma region move when leaving the pumping channel is greater than the mean free path of the charged particles.
10. The novel edge etching reaction device as claimed in claim 8, wherein wafers are accommodated between the upper electrode and the lower electrode and between the upper radio frequency isolation ring and the lower radio frequency isolation ring; the distance between the upper surface of the wafer and the lower surface of the upper electrode is suitable for keeping 0.1mm to 10 mm when the edge of the wafer is etched.
11. The novel edge etching reaction device as claimed in claim 8, wherein the surface of the upper RF isolation ring facing the lower RF isolation ring is beveled, and the surface of the lower RF isolation ring facing the upper RF isolation ring is beveled; and the distance between the upper radio frequency isolation ring and the lower radio frequency isolation ring is reduced from the lower radio frequency isolation ring to the horizontal direction of the lower electrode.
12. The novel edge etching reaction device as claimed in claim 8 or 11, wherein the side electrode connector is of a U-shaped structure, and the side electrode connector has a groove therein, and the groove faces to a region between the upper and lower rf isolation rings.
13. The novel edge etch reactor of claim 8, wherein the side electrode connection is in contact with a side of the upper RF isolation ring and a side of the lower RF isolation ring in the first position; the side electrode connecting piece is in contact with the side part of the upper radio frequency isolation ring or the side part of the lower radio frequency isolation ring in the second position state.
14. The novel edge etch reactor of claim 8, wherein the side electrode connection is discrete from the sides of the upper and lower RF isolation rings in the first position; the side electrode connecting piece is separated from the side part of the upper radio frequency isolation ring or the side part of the lower radio frequency isolation ring in the second position state.
15. The novel edge etching reaction device as claimed in claim 8, wherein the material of the upper and lower RF isolation rings is a low dielectric constant material, and the low dielectric constant material comprises a reaction gas vacuum medium, ceramic or quartz.
16. The novel edge etching reaction device as claimed in claim 8, further comprising a first gas inlet channel, wherein the first gas inlet channel passes through the upper RF isolation ring and an outlet of the first gas inlet channel is located at the bottom of the upper RF isolation ring.
17. The novel edge etching reaction device of claim 6, further comprising: and the second gas inlet channel longitudinally penetrates through the upper electrode and the upper medium isolation layer, and is suitable for introducing inert gas.
18. The novel edge etch reactor of claim 6, wherein the side electrode connecting member surface, the upper electrode surface of the side portion of the upper dielectric isolation layer, and the lower electrode surface of the side portion of the lower dielectric isolation layer have a protective layer on a portion facing the wafer.
19. The novel edge etching reaction device as claimed in claim 18, wherein the material of the protection layer is alumina or Y2O3。
20. The novel edge etching reaction device as claimed in claim 1, wherein the size of the upper RF isolation ring between the side electrode connecting member and the upper electrode is 0.1mm-100 mm.
21. The novel edge etching reaction device as claimed in claim 1, wherein the material of the side electrode connecting member, the upper electrode, and the lower electrode comprises aluminum alloy, silicon, or silicon carbide.
22. The novel edge etching reaction device of claim 1, further comprising: and the position adjusting component is connected with the upper electrode and is suitable for adjusting the distance between the upper electrode and the lower electrode.
23. The novel edge etch reactor of claim 1, wherein the first threshold is 1000 volts and the second threshold is 30 °.
24. An edge etching method using the novel edge etching reaction device as claimed in any one of claims 1 to 23, comprising:
transferring the wafer between the lower electrode and the upper electrode;
adjusting the distance between the upper electrode and the lower electrode to enable the distance between the upper surface of the wafer and the lower surface of the upper electrode to be within a threshold range;
after the distance between the upper electrode and the lower electrode is adjusted, adjusting the position of the side electrode connecting piece and switching the side electrode connecting piece from the second position state to the first position state;
and after the side electrode connecting piece is in the first position state, introducing etching gas, wherein the etching gas is excited by the voltage difference between the upper electrode and the side electrode connecting piece and the voltage difference between the lower electrode and the side electrode connecting piece to generate plasma so as to etch the edge of the wafer.
25. The edge etching method of claim 24, wherein the novel edge etching reaction device further comprises: a second air inlet passage longitudinally extending through the upper electrode;
the edge etching method further comprises the following steps: and in the process of introducing the etching gas, introducing inert gas by adopting a second gas channel.
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| CN202010617799.4A CN111627841A (en) | 2020-07-01 | 2020-07-01 | Novel edge etching reaction device and edge etching method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112259550A (en) * | 2020-10-21 | 2021-01-22 | 长江存储科技有限责任公司 | Etching method and etching device for semiconductor device |
| CN114446748A (en) * | 2020-10-30 | 2022-05-06 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and working method thereof |
| TWI788073B (en) * | 2020-11-18 | 2022-12-21 | 大陸商中微半導體設備（上海）股份有限公司 | Plasma treatment device |
| WO2024081085A1 (en) * | 2022-10-13 | 2024-04-18 | Applied Materials, Inc. | Apparatus design for film removal from the bevel and edge of the substrate |
-
2020
- 2020-07-01 CN CN202010617799.4A patent/CN111627841A/en not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112259550A (en) * | 2020-10-21 | 2021-01-22 | 长江存储科技有限责任公司 | Etching method and etching device for semiconductor device |
| CN114446748A (en) * | 2020-10-30 | 2022-05-06 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and working method thereof |
| CN114446748B (en) * | 2020-10-30 | 2024-05-10 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and working method thereof |
| TWI788073B (en) * | 2020-11-18 | 2022-12-21 | 大陸商中微半導體設備（上海）股份有限公司 | Plasma treatment device |
| WO2024081085A1 (en) * | 2022-10-13 | 2024-04-18 | Applied Materials, Inc. | Apparatus design for film removal from the bevel and edge of the substrate |
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